Patents by Inventor Zhanfeng CAO

Zhanfeng CAO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9502235
    Abstract: According to embodiments of the invention, a thin film transistor (TFT), a manufacturing method of the TFT, an array substrate and a display device are provided. The manufacturing method of the TFT comprises: forming a gate electrode on a substrate; forming a gate insulating layer on the substrate formed with the gate electrode; forming an oxide semiconductor active layer, an etch stop layer and a source/drain electrode on the gate insulating layer, wherein the etch stop layer is obtained by an oxidation treatment.
    Type: Grant
    Filed: December 13, 2012
    Date of Patent: November 22, 2016
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Zhanfeng Cao, Xuehui Zhang
  • Publication number: 20160334682
    Abstract: The color filter on array substrate comprises a gate line, a data line, a common electrode layer and a black matrix, wherein: the black matrix is positioned between the gate line and the common electrode layer and/or the data line and the common electrode layer; and the material of the black matrix is a metal material. The present disclosure is applied in the technology of manufacturing display means.
    Type: Application
    Filed: March 16, 2015
    Publication date: November 17, 2016
    Inventors: Feng Zhang, Zhanfeng Cao, Qi Yao
  • Publication number: 20160336458
    Abstract: A thin film transistor, a method of fabricating the same, an array substrate and a display device are disclosed. The method of fabricating the thin film transistor comprises: forming a semiconductor layer; forming a conductive film that does not react with acid solution on the semiconductor layer to be employed as a protective layer; forming a source electrode and a drain electrode on the protective layer; and removing a portion of the protective layer between the source electrode and the drain electrode to expose a portion of the semiconductor layer between the source electrode and the drain electrode.
    Type: Application
    Filed: May 9, 2016
    Publication date: November 17, 2016
    Inventors: Jincheng Gao, Bin Zhang, Xiaolong He, Xiangchun Kong, Qi Yao, Zhanfeng Cao, Zhengliang Li
  • Publication number: 20160336373
    Abstract: The present disclosure provides an X-ray flat panel detector including: a base substrate; thin film transistors (TFTs), a pixel electrode layer, photodiodes, a transparent electrode layer, and an X-ray conversion layer which are arranged on the base substrate; and an electric field application portion configured to generate an electric field, wherein the photodiodes are arranged in the electric field, and a moving direction of negative charges when visible light rays are converted to electrical signals by the photodiodes is substantially same as a direction of the electric field. In this detector, it is applied a direction of the electric field which is substantially same as the moving direction of negative charges in the photodiode, so that movement of holes and electrons of the photodiode may be accelerated under an influence of the electric field, and thus the electrical signal may promptly arrive at the pixel electrode.
    Type: Application
    Filed: April 1, 2016
    Publication date: November 17, 2016
    Applicant: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Jincheng GAO, Zhanfeng CAO, Xiangchun KONG, Qi YAO, Zhengliang LI, Bin Zhang, Xiaolong HE
  • Patent number: 9487867
    Abstract: The present invention discloses a method for preparing a film and a method for preparing an array substrate, and an array substrate. The method for preparing a film comprises forming an AB alloy film subjected to oxidation treatment and forming a first metal A film, wherein the first metal A film is provided to contact with the AB alloy film subjected to oxidation treatment, wherein A is a first metal and B is a second metal, the second metal is selected from active metals in period 2 to period 4 of group 2, and the AB alloy film subjected to oxidation treatment is formed by forming an alloy film of a first metal A and a second metal B in the presence of an oxygen-containing gas.
    Type: Grant
    Filed: September 24, 2014
    Date of Patent: November 8, 2016
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Qi Yao, Feng Zhang, Zhanfeng Cao, Zhengliang Li
  • Patent number: 9478665
    Abstract: A thin film transistor is disclosed in the present invention. The thin film transistor comprises: a substrate, an active layer, a first etching barrier layer, a second etching barrier layer, a source and a drain, wherein: the active layer is disposed over the substrate; the first etching barrier layer is disposed over the active layer; the second etching barrier layer is disposed over the first etching barrier layer; the source and the drain are disposed over the second etching barrier layer, and are connected to each other through the active layer by means of via holes formed in the first etching barrier layer and the second etching barrier layer by etching; and a length of the first etching barrier layer at a channel position is less than a length of the second etching barrier layer. A method of manufacturing the thin film transistor, an array substrate and a display apparatus are also disclosed in the present invention.
    Type: Grant
    Filed: November 27, 2014
    Date of Patent: October 25, 2016
    Assignee: BOE Technology Group Co., Ltd.
    Inventors: Feng Zhang, Zhanfeng Cao, Qi Yao
  • Publication number: 20160306220
    Abstract: The present invention provides a COA substrate and a fabricating method thereof as well as a display device, and relates to the field of display technology, which solves the problem of a relatively large parasitic capacitance to be generated between the data line and the common electrode layer because the common electrode layer is formed on the black matrix directly in the existing technical solution, avoids signal delay, and improves the image display quality of the display. The COA substrate comprises: a black matrix, a color filter, a common electrode layer and an organic insulating film layer formed on the black matrix, the common electrode layer is formed on the organic insulating film layer, the organic insulating film layer is arranged on the color filter and covers the position of the color filter; the material of the organic insulating film layer is an organic insulating material having a relative dielectric constant less than 10.
    Type: Application
    Filed: April 14, 2015
    Publication date: October 20, 2016
    Applicant: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Feng Zhang, Zhanfeng Cao, Qi Yao
  • Publication number: 20160306225
    Abstract: The present disclosure provides a method for manufacturing a display substrate, the display substrate and a display device. The method includes a step of forming a black matrix. The step of forming the black matrix includes: forming a metal pattern for the black matrix, the metal pattern being made of an amphoteric metal or an amphoteric metal alloy; and treating the metal pattern with an alkaline solution, so as to form the black matrix wherein a surface of black matrix has a concave-convex microstructure.
    Type: Application
    Filed: April 12, 2016
    Publication date: October 20, 2016
    Applicant: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Feng ZHANG, Zhanfeng CAO, Qi YAO
  • Publication number: 20160301024
    Abstract: This invention provides an organic electroluminescent device, a method of preparing the same, a display substrate comprising the same, and a display apparatus. According to the invention, the agglomeration and self quenching of quantum dots can be effectively prevented as the quantum dots are uniformly dispersed in electroluminescent polymer fibers. Due to the fluorescence resonance energy transfer effect between the electroluminescent polymer and the quantum dots, a higher quantum yield is achieved, and the luminescence efficiency of the quantum dots can be improved accordingly. Furthermore, since the light emission from the quantum dots is achieved by the fluorescence resonance energy transfer effect, which is an energy transfer process without damage to the quantum dots, the damage to quantum dots is less and thus the lifetime thereof can be beneficially increased, as compared to the direct charge injection mode of the prior art.
    Type: Application
    Filed: January 13, 2015
    Publication date: October 13, 2016
    Inventors: Xiaolong HE, Zhanfeng CAO, Qi YAO
  • Patent number: 9465269
    Abstract: An array substrate, a method for fabricating the same and a display device comprising the array substrate are disclosed. The array substrate includes: a base substrate; a plurality of gate lines (s1, s2, s3) and a plurality of data lines (d1, d2, d3) disposed on the base substrate as intersecting with each other to define a plurality of pixel regions (A, B, C, D); a first transparent electrode disposed in each of the pixel regions (A, B, C, D). The array substrate further includes: an insulation element, wherein the insulation element is disposed between two adjacent first transparent electrodes, a top surface of the insulation element is higher than a top surface of the first transparent electrode, and a bottom surface of the insulation element is lower than the top surface of the first transparent electrode. The array substrate may reduce the electric field interference between adjacent first transparent electrodes.
    Type: Grant
    Filed: July 10, 2014
    Date of Patent: October 11, 2016
    Assignee: BOE Technology Group Co., Ltd.
    Inventors: Feng Zhang, Zhanfeng Cao, Qi Yao
  • Publication number: 20160293658
    Abstract: The present disclosure discloses an X-ray flat-panel detector and a method for preparing the same, and a white insulating material. The X-ray flat-panel detector includes: a thin-film transistor substrate; an insulating reflection layer, which is provided on the thin-film transistor substrate and has a reflection function, wherein the insulating reflection layer is provided with a contact hole through which a source electrode of the thin-film transistor substrate is exposed; a pixel electrode, which is provided on the insulating reflection layer, wherein the pixel electrode is electrically connected to the source electrode of the thin-film transistor substrate via the contact hole; a photodiode, which covers the pixel electrode; an electrode, which is provided on the photodiode; and an X-ray conversion layer, which is provided on the electrode.
    Type: Application
    Filed: August 10, 2015
    Publication date: October 6, 2016
    Applicant: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Jincheng GAO, Zhanfeng CAO, Qi YAO, Zhengliang LI, Xiaolong HE, Bin ZHANG, Xiangchun KONG, Wei ZHANG
  • Publication number: 20160284673
    Abstract: A full-color display panel includes a plurality of sub-pixel units. The sub-pixel unit includes an LED unit and a filter layer transmitting light of a specific color. The LED unit includes an LED semiconductor chip emitting light of a specific color. The LED semiconductor chips of the plurality of sub-pixel units are homochromatic LED semiconductor chips emitting light of a same color. In each sub-pixel unit, a position of the filter layer corresponds to a position of the LED semiconductor chip, and the filter layer is located on a side of the LED semiconductor chip that emits light.
    Type: Application
    Filed: March 20, 2014
    Publication date: September 29, 2016
    Applicant: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Xiangchun KONG, Zhanfeng CAO, Qi YAO, Luke DING
  • Patent number: 9455324
    Abstract: The present invention provides a thin film transistor and a method of fabricating the thin film transistor, an array substrate and a method of fabricating the array substrate, and a display device. The thin film transistor includes a substrate and a gate, an insulation layer, an active layer, a source and a drain which are provided on the substrate. A spacer layer is also provided between the gate and the active layer, and the spacer layer overlaps at least with one of the gate and the active layer having a smaller area in an orthographic projection direction. The spacer layer can effectively prevent material forming the gate from being diffused into the active layer, thereby ensuring stability of performance of the thin film transistor. In the array substrate utilizing the thin film transistor, the spacer layer further extends to a region corresponding to a gate line.
    Type: Grant
    Filed: November 27, 2013
    Date of Patent: September 27, 2016
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Zhanfeng Cao, Qi Yao, Luke Ding, Bing Sun, Xiangchun Kong
  • Publication number: 20160276613
    Abstract: The embodiments of the invention disclose a hollow white composite quantum dot preparation method, a display panel and a display device. In the preparation method, unicolor quantum dots of different colors are prepared into corresponding unicolor quantum dot emulsions through an emulsion polymerization technique, dissolved silicon dioxide nano particles are used as a seed solution, the individual unicolor quantum dot emulsions are dropped in the seed solution in sequence, such that the surfaces of the silicon dioxide nano particles are coated with the unicolor quantum dots in the individual unicolor quantum dot emulsions in sequence according to the dropping order so as to obtain white composite quantum dots, and finally, the silicon dioxide nano particles in the white composite quantum dots are removed to obtain hollow white composite quantum dots.
    Type: Application
    Filed: June 10, 2014
    Publication date: September 22, 2016
    Inventors: Jingxia Gu, Chen Tang, Zhanfeng Cao, Qi Yao, Feng Zhang
  • Publication number: 20160252997
    Abstract: The present invention discloses a touch screen substrate and a method of manufacturing the same. The touch screen substrate includes a capacitance layer comprising a plurality of electrodes, a first cover layer formed on the capacitance layer; a plurality of conductive bridges located on the first cover layer and configured to be electrically connected to a part of the electrodes that are electrically isolated; and a plurality of electrical connection lines, configured to respectively be electrically connected to the respective conductive bridge so as to electrically connect the first electrode with a touch detecting circuit. A material layer for forming the electrical connection lines is different from a material layer for forming the conductive bridges such that the conductive bridges located below the electrical connection lines are not corroded when the material layer for the electrical connection lines is etched.
    Type: Application
    Filed: January 22, 2015
    Publication date: September 1, 2016
    Inventors: Qi YAO, Feng ZHANG, Zhanfeng CAO, Zhen LIU, Xiaolong HE
  • Publication number: 20160254388
    Abstract: A thin film transistor is disclosed in the present invention. The thin film transistor comprises: a substrate, an active layer, a first etching barrier layer, a second etching barrier layer, a source and a drain, wherein: the active layer is disposed over the substrate; the first etching barrier layer is disposed over the active layer; the second etching barrier layer is disposed over the first etching barrier layer; the source and the drain are disposed over the second etching barrier layer, and are connected to each other through the active layer by means of via holes formed in the first etching barrier layer and the second etching barrier layer by etching; and a length of the first etching barrier layer at a channel position is less than a length of the second etching barrier layer. A method of manufacturing the thin film transistor, an array substrate and a display apparatus are also disclosed in the present invention.
    Type: Application
    Filed: November 27, 2014
    Publication date: September 1, 2016
    Inventors: Feng ZHANG, Zhanfeng CAO, Qi YAO
  • Publication number: 20160247830
    Abstract: The present invention discloses a thin film transistor, comprising a gate electrode (2), a gate insulating layer (3), and active layer (4), and etching barrier layer (7), a source electrode and a drain electrode, wherein the source electrode comprises a first source electrode (5) and a second source electrode (8) electrically connected therewith, the drain electrode comprises a first drain electrode (6) and a second drain electrode (9) electrically connected therewith, the first source electrode and first drain electrode are formed on the active layer, the etching barrier layer at least covers a portion of the active layer between the first source electrode and the first drain electrode, and respectively covers portions of the first source electrode (5) and the first drain electrode (6) adjacent to each other, and the second source electrode and the second drain electrode are formed on the etching barrier layer.
    Type: Application
    Filed: October 21, 2014
    Publication date: August 25, 2016
    Inventors: Feng Zhang, Zhanfeng Cao, Qi Yao
  • Publication number: 20160225912
    Abstract: A thin film transistor and a preparation method therefor, an array substrate and a display apparatus. The thin film transistor comprises an active layer (4), an etched barrier layer (5) disposed on the active layer (4), and a source and drain (6) disposed on the etched barrier layer (5). The source and drain (6) are disposed on a same layer in a spaced manner. First via holes (7) are formed in the etched barrier layer (5), second via holes (8) are formed in positions in the active layer (4) corresponding to the first via holes (7). The source and drain (6) are connected to the active layer (4) through the first via holes (7) formed in the etched barrier layer (5) and the second via holes (8) formed in the active layer (4).
    Type: Application
    Filed: December 5, 2014
    Publication date: August 4, 2016
    Applicant: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Zhanfeng Cao, Zhen Liu, Feng Zhang, Qi Yao
  • Publication number: 20160197191
    Abstract: An array substrate, a method for fabricating the same and a display device are disclosed. The method for fabricating the array substrate includes: forming a pattern of a gate electrode, a pattern of a gate insulation layer and a pattern of a metal oxide semiconductor active layer on a base substrate; forming an etch stop layer; forming a pattern of a pixel electrode first, and then forming a pattern of a source electrode and a pattern of a drain electrode wherein the pattern of the pixel electrode is connected to the pattern of the metal oxide semiconductor active layer through the pattern of the source electrode or the pattern of the drain electrode. The method can prevent the problem that the pattern of the pixel electrode failing to connect to the pattern of the source electrode or the pattern of the drain electrode.
    Type: Application
    Filed: November 21, 2014
    Publication date: July 7, 2016
    Applicant: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Zhanfeng Cao, Feng Zhang, Qi Yao
  • Patent number: 9368635
    Abstract: A manufacturing method of an array substrate, comprising the following steps: S1: forming a pattern comprising a semiconductor layer (2), a gate insulating layer (4), a gate electrode (5) and a gate line on a substrate (1); S2: on the substrate (1) subjected to the step S1, forming a metal diffusion layer (3) on the pattern of the semiconductor layer (2) which is not covered by the gate insulating layer (4) and forming a barrier layer (6) in other regions; S3: forming a passivation layer (7) on the substrate (1) subjected to the step S2; and S4: forming a pattern of via holes (11), source and drain electrodes (81, 82), a data line and a pixel electrode (9) on the passivation layer (7), the source and drain electrodes (81, 82) being which being connected to the metal diffusion layer (3) through the via holes (11) respectively. With this method, the process flow is simplified, and the process costs are reduced.
    Type: Grant
    Filed: November 15, 2012
    Date of Patent: June 14, 2016
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Tianming Dai, Qi Yao, Feng Zhang, Zhanfeng Cao