Abstract: A method for processing a heat exchanger includes: providing a heat exchange, in which a bent section of one heat exchange tube in the heat exchanger is at least partially in contact with a bent section of another heat exchange tube adjacent to it in a length direction of the first tube; placing the pushing member, such that the pushing member is at least partially in contact with a bent section of at least one heat exchange tube; moving the pushing member, and/or moving the heat exchange tube to enable the bent section to rotate by a predetermined angle or move by a predetermined distance relative to a first section connected with it, such that the bent section of one heat exchange tube is not in contact with the bent section of the other heat exchange tube adjacent to it in the length direction of the first tube.

Abstract: An electronic device includes a chip, a protection, a molding layer and a redistribution structure layer. The chip has an active surface and a first side surface connected to the active surface. The protection layer is disposed on the active surface of the chip and has a second side surface. The molding layer surrounds the chip and the protection layer. The redistribution structure layer is disposed on the molding layer, on the protection layer and electrically connected to the chip. The roughness of the first side surface is different from the roughness of the second side surface.

Abstract: A heat exchanger, includes: a first assembly including a first tube and a third tube; a second assembly including a second tube and a fourth tube; a plurality of heat exchange tubes, the heat exchange tube including a first heat exchange tube communicating the first tube with the third tube and a second heat exchange tube communicating the second tube with the fourth tube; and a fin, wherein part of the fin is connected with one first heat exchange tube, and the other part of the fin is connected with one second heat exchange tube. A first hydraulic diameter of the first tube is D1, a second hydraulic diameter of the second tube is D2, and 1<D1/D2?6; and/or, a width of the first heat exchange tube is Tw1, a width of the second heat exchange tube is Tw2, and 1<Tw1/Tw2?5.

Abstract: Disclosed is a coaxial cylindrical D-D neutron generator based on inertial electrostatic confinement fusion, falling within the technical field of neutron generators. A housing, a grid anode, a grid cathode, a high-voltage connector assembly and an observation window are included. One end of the housing is connected to the high-voltage connector assembly, and the observation window is arranged at the other end of the housing; and a low-pressure cavity is arranged at an interior of the housing, the grid anode and the grid cathode are mounted in the low-pressure cavity and electrically connected to a high-voltage connector, and an interior of the low-pressure cavity is filled with deuterium gas. The neutron generator of the present disclosure features simple structure, long service life, simple maintenance and low cost, which can meet the requirements of reactor ignition, nuclear material detection and nondestructive detection of aerospace components for miniaturized neutron generators.

Abstract: The present invention relates to a braiding method for a nasal sinus stent, comprising: providing a filament; providing a braiding tool having a longitudinal central axis, wherein the braiding tool comprises a first shaping part and a second shaping part which are axially spaced from each other, wherein the first shaping part is provided with n first anchor points, and the second shaping part is provided with n second anchor points; forming an initial configuration stent by around a circumferential direction of the braiding tool, allowing a single filament starting from 1st first anchor point on the first shaping part, coming across m1 vertex intervals to extend towards the second anchor point, and then coming across m2 vertex intervals to extend towards the first anchor point, so as to complete a first “V” shaped braiding path, and then repeating the “V” shaped braiding path until the single filament returns to the 1st first anchor point, wherein the initial configuration stent has a circumference and n vert

Abstract: A farmland reference crop evapotranspiration prediction method based on uncertainty of meteorological factors, includes: S1. acquiring a set number of groups of weather forecast data of a prediction region within a preset time period; S2. inputting each group of weather forecast data into a Bayesian probability forecast system to obtain corrected weather forecast data; and S3. inputting each group of the corrected weather forecast data into a trained RBF neural network, and predicting to obtain a farmland reference crop evapotranspiration. In the present invention, the Bayesian probability forecast system is configured to correct the weather forecast data and eliminate uncertainty of weather forecast data to obtain the accurate reference crop evapotranspiration forecasted by the RBF neural network using these data.

Abstract: A method for processing a heat exchanger includes: providing a heat exchange, in which a bent section of one heat exchange tube in the heat exchanger is at least partially in contact with a bent section of another heat exchange tube adjacent to it in a length direction of the first tube; placing the pushing member, such that the pushing member is at least partially in contact with a bent section of at least one heat exchange tube; moving the pushing member, and/or moving the heat exchange tube to enable the bent section to rotate by a predetermined angle or move by a predetermined distance relative to a first section connected with it, such that the bent section of one heat exchange tube is not in contact with the bent section of the other heat exchange tube adjacent to it in the length direction of the first tube.

Abstract: The present disclosure provides a semiconductor device package. The semiconductor device package includes a substrate having a first surface, an electrical contact disposed over a first region of the substrate, and an EMI shielding layer disposed over the substrate. The EMI shielding layer includes a non-uniform thickness and an elevation of the EMI shielding layer is higher than an elevation of the electrical contact with respect to the first surface of the substrate. A method for manufacturing a semiconductor device package is also disclosed.

Abstract: The present disclosure provides a semiconductor device package including a carrier, an electronic component, and a shielding layer. The carrier includes a predetermined non-shielding region. The electronic component is disposed over the predetermined non-shielding region. The shielding layer includes a first portion disposed over the predetermined non-shielding region.