Abstract: Provided herein are various embodiments of determining a cation exchange capacity of a rock sample. One embodiment of a method of determining a cation exchange capacity of a rock sample comprises equilibrating the rock sample to a relative humidity, performing a dielectric permittivity measurement on the rock sample at the relative humidity, and determining a cation exchange capacity of the rock sample based on the dielectric permittivity measurement. One embodiment of a method of determining a cation exchange capacity of a rock sample comprises receiving a dielectric permittivity measurement on the rock sample, and determining a cation exchange capacity for the rock sample based on the dielectric permittivity measurement of the rock sample and a relationship between cation exchange capacity and dielectric permittivity measurements for mineral mixtures corresponding to a range of cation exchange capacity values.

Abstract: A remote control device for a manufacturing equipment and a method for detecting manual control are provided. The method for detecting the manual control on the manufacturing equipment includes the following steps. A cursor pattern is created. When the user interface is automatically controlled, a history location of the cursor pattern shown on a user interface of the manufacturing equipment is detected to obtain a location distribution. The location distribution is stored. A current location of the cursor pattern shown on the user interface is detected. If the current location is not within the location distribution, it is deemed that the user interface is manually controlled.

Abstract: A method includes forming a gate stack of a transistor. The formation of the gate stack includes forming a silicon oxide layer on a semiconductor region, depositing a hafnium oxide layer over the silicon oxide layer, depositing a lanthanum oxide layer over the hafnium oxide layer, and depositing a work-function layer over the lanthanum oxide layer. Source/drain regions are formed on opposite sides of the gate stack.

Abstract: An optical system comprising an optical coherence tomography (OCT) measuring device and a beam deflection unit for laterally deflecting the position or angle of a beam path of the OCT measuring device. There is an optical component in the beam path, said optical component being embodied in such a way that a back-reflection of the optical component has a different configuration in terms of its longitudinal location along the beam path depending on the lateral position of the deflected beam path on the optical component. The optical system comprises an evaluation unit which is embodied in such a way that a value of the lateral position or angle deflection of the beam deflection unit is determinable on the basis of a longitudinal location of the back-reflection at the optical component determined by the OCT measuring device.

Abstract: The present disclosure relates to a soft magnetic composite with a two-dimensional magnetic moment and a high working frequency band, and a preparation method therefor. According to an embodiment, the soft magnetic composite with a two-dimensional magnetic moment may comprise: an insulating matrix; and two-dimensional magnetic moment micropowder dispersed in the insulating matrix, wherein inside the two-dimensional magnetic moment micropowder, a magnetic moment is distributed in a specific two-dimensional plane.

Abstract: A calibrating method is provided including the following steps. A type of a first sensor and a type of a first sensor carrier are determined according to an external shape of a first object. The first sensor is carried by the first sensor carrier, and a relative coordinate of the first object is measured by the first sensor. The relative coordinate of the first object is compared with a predetermined coordinate of the first object to obtain a first object coordinate error, and the first object coordinate error is corrected. After the first object coordinate error is corrected, the first object is driven to perform an operation on a second object or the second object is driven to perform the operation on the first object. A calibrating system is also provided.

Abstract: A method for mirror image package preparation and application operation includes: acquiring a launch operation package and launch mirror image package; upon launching of the target application, establishing a first channel between a local buffer manager and the launch mirror image package, and a second channel between the local buffer manager and a server; creating a first virtual file system locally, and establishing a third channel between the local buffer manager and the first virtual file system; if a received file access request is a read request, acquiring first data from the launch mirror image package, and/or from an original mirror image package on the server; feeding the first data back to the target application, wherein storage directory structures of data sets in the launch mirror image package and original mirror image package individually correspond to logic directory relations of file sets in an original data package.

Abstract: A method includes forming a gate stack of a transistor. The formation of the gate stack includes forming a silicon oxide layer on a semiconductor region, depositing a hafnium oxide layer over the silicon oxide layer, depositing a lanthanum oxide layer over the hafnium oxide layer, and depositing a work-function layer over the lanthanum oxide layer. Source/drain regions are formed on opposite sides of the gate stack.

Abstract: A semiconductor device and method includes: forming a gate stack over a substrate; growing a source/drain region adjacent the gate stack, the source/drain region being n-type doped Si; growing a semiconductor cap layer over the source/drain region, the semiconductor cap layer having Ge impurities, the source/drain region free of the Ge impurities; depositing a metal layer over the semiconductor cap layer; annealing the metal layer and the semiconductor cap layer to form a silicide layer over the source/drain region, the silicide layer having the Ge impurities; and forming a metal contact electrically coupled to the silicide layer.

Abstract: A subrange analog-to-digital converter (ADC) converts analog image signal received from a bitline to a digital signal through an ADC comparator. The comparator is shared by a successive approximation register (SAR) ADC coupled to provide M upper output bits (UOB) of the subrange ADC and a ramp ADC coupled to provide N lower output bits (LOB). The digital-to-analog converter (DAC) of the SAR ADC comprises M buffered bit capacitors connected to the comparator. Each buffered bit capacitor comprises a bit capacitor, a bit buffer, and a bit switch controlled by one of the UOB of the SAR ADC. A ramp buffer is coupled between a ramp generator and a ramp capacitor. The ramp capacitor is further coupled to the same comparator. The implementation of ramp buffer and the bit buffers as well as their sharing of the same kind of buffer reduces differential nonlinear (DNL) error of the subrange ADC.

Abstract: A clamping device includes a first holder and a second holder. The first holder includes a first abutting member and a driving member. The driving member is coupled to the first abutting member. The second holder includes a second abutting member. The first abutting member and the second abutting member are oppositely disposed and spaced apart from each other to receive a workpiece. The driving member is coupled to the first abutting member to drive the first abutting member to move in a direction toward the second abutting member to clamp the workpiece between the first abutting member and the second abutting member.

Abstract: A column amplifier with a comparator for use in an image sensor includes an amplifier coupled to receive an input signal representative of an image charge from a pixel cell of the image sensor. An amplifier auto-zero switch is coupled between an input of the amplifier and an output of the amplifier. A feedback capacitor coupled to an input of the amplifier. An amplifier output switch coupled between the output of the amplifier and the feedback capacitor. A comparator includes a first input coupled the amplifier output switch. A comparator auto-zero switch is coupled between the first input of the comparator and an output of the comparator.

Abstract: One embodiment of a method of performing a test on a core sample comprises transferring at least a portion of a core sample from a first core containment vessel to a second core containment vessel. The core sample is maintained at a substantially equivalent pressure or placed under a higher pressure during the transfer of the core sample from the first vessel to the second vessel. The method further comprises performing a test on the core sample in a measurement region of the second vessel.

Abstract: A column amplifier with a comparator for use in an image sensor includes an amplifier coupled to receive an input signal representative of an image charge from a pixel cell of the image sensor. An amplifier auto-zero switch is coupled between an input of the amplifier and an output of the amplifier. A feedback capacitor coupled to an input of the amplifier. An amplifier output switch coupled between the output of the amplifier and the feedback capacitor. A comparator includes a first input coupled the amplifier output switch. A comparator auto-zero switch is coupled between the first input of the comparator and an output of the comparator.

Abstract: Provided are methods for clinical treatment of cancers or tumors (e.g., advanced solid tumors) using (i) a combination of a tetanus toxoid, anti-OX40 antibody and anti-PD-1 antibody, (ii) a combination of anti-OX40 antibody and anti-PD-1 antibody, (iii) a combination of a tetanus toxoid and anti-PD-1 antibody, or (iv) an anti-PD-1 antibody.

Abstract: A reflector arrangement for determining the position or marking of target points, having at least one retroreflector, and a beam detection unit, by means of which the orientation measurement radiation passing through the retroreflector is acquirable. The beam detection unit comprises a first sensor for generating a signal in dependence on an acquisition of orientation measurement radiation and a first beam guiding unit. The first sensor and the first beam guiding unit are arranged such that a detection field of view for acquiring the orientation measurement radiation is defined, an alignment of the detection field of view around the yaw axis is variable and orientation measurement radiation passing through the retroreflector is acquirable in dependence on the alignment of the detection field of view with the first sensor.

Abstract: The present disclosure describes an exemplary fabrication method of a p-type fully strained channel that can suppress the formation of {111} facets during a silicon germanium epitaxial growth. The exemplary method includes the formation of silicon epitaxial layer on a top, carbon-doped region of an n-type region. A recess is formed in the silicon epitaxial layer via etching, where the recess exposes the top, carbon-doped region of the n-type region. A silicon seed layer is grown in the recess, and a silicon germanium layer is subsequently epitaxially grown on the silicon seed layer to fill the recess. The silicon seed layer can suppress the formation of growth defects such as, for example, {111} facets, during the silicon germanium epitaxial layer growth.

Abstract: A method for forming a semiconductor device is provided. The method includes forming a gate stack to partially cover a semiconductor structure. The method also includes forming a first semiconductor material over the semiconductor structure. The method further includes forming a second semiconductor material over the first semiconductor material. In addition, the method includes forming a third semiconductor material over the second semiconductor material. The first semiconductor material and the third semiconductor material together surround the second semiconductor material. The second semiconductor material has a greater dopant concentration than that of the first semiconductor material or that of the third semiconductor material.

Abstract: A semiconductor device and method includes: forming a gate stack over a substrate; growing a source/drain region adjacent the gate stack, the source/drain region being n-type doped Si; growing a semiconductor cap layer over the source/drain region, the semiconductor cap layer having Ge impurities, the source/drain region free of the Ge impurities; depositing a metal layer over the semiconductor cap layer; annealing the metal layer and the semiconductor cap layer to form a silicide layer over the source/drain region, the silicide layer having the Ge impurities; and forming a metal contact electrically coupled to the silicide layer.

Abstract: A fin field effect transistor (FinFET) device structure and method for forming the same are provided. The FinFET device structure includes a fin structure extending above a substrate. The fin structure includes a channel region, a portion of the channel region is made of silicon germanium (SiGe), and the silicon germanium (SiGe) has a gradient germanium (Ge) concentration. The FinFET device structure includes a gate structure formed on the channel region of the fin structure.