Abstract: Structures for spacers in a device structure for a field-effect transistor and methods for forming spacers in a device structure for a field-effect transistor. A first spacer is located adjacent to a vertical sidewall of a gate electrode, a second spacer located between the first spacer and the vertical sidewall of the gate electrode, and a third spacer located between the second spacer and the vertical sidewall of the gate electrode. The first spacer has a higher dielectric constant than the second spacer. The first spacer has a higher dielectric constant than the third spacer. The third spacer has a lower dielectric constant than the second spacer.

Abstract: Structures for spacers in a device structure for a field-effect transistor and methods for forming spacers in a device structure for a field-effect transistor. A first spacer is located adjacent to a vertical sidewall of a gate electrode, a second spacer is located between the first spacer and the vertical sidewall of the gate electrode, and a third spacer is located between the second spacer and the vertical sidewall of the gate electrode. The first spacer has a higher dielectric constant than the second spacer. The first spacer has a higher dielectric constant than the third spacer. The third spacer has a lower dielectric constant than the second spacer.

Abstract: A shielding system for high-current applications, having a connecting cable that has an insulated conductor (22) and a cable shielding surrounding the insulated conductor, as well as a shielding housing having a feed-through. In addition, the shielding system has a hollow cylindrical and electrically conductive shielding sleeve. The insulated conductor is fed through the shielding sleeve. The shielding sleeve is situated in the area of the feed-through of the shielding housing, so that the shielding housing abuts a jacket surface of the shielding sleeve. The cable shielding lies against a jacket surface of the shielding sleeve. The cable shielding is electrically connected to the shielding housing via the shielding sleeve.

Abstract: Disclosed is a semiconductor structure, including at least one fin-type field effect transistor and at least one single-diffusion break (SDB) type isolation region, and a method of forming the semiconductor structure. In the method, an isolation bump is formed above an isolation region within a semiconductor fin and sidewall spacers are formed on the bump. During an etch process to reduce the height of the bump and to remove isolation material from the sidewalls of the fin, the sidewall spacers prevent lateral etching of the bump. During an etch process to form source/drain recesses in the fin, the sidewalls spacers protect the semiconductor material adjacent to the isolation region. Consequently, the sides and bottom of each recess include semiconductor surfaces and the angle of the top surfaces of the epitaxial source/drain regions formed therein is minimized, thereby minimizing the risk of unlanded source/drain contacts.

Abstract: System and method that improves cargo logistics may be presented. For instance, shipping capacity in cargo logistics may be best utilized based on providing pricing and scheduling solutions that are jointly optimized and prices differentiated based on flexibility of service request. Scheduled service and pricing may be transmitted as a signal to control execution of the cargo logistics.

Abstract: A contact element for insertion in an insertion direction into a contact chamber of a plug-in connector. The contact element includes a housing extending in the insertion direction. The contact element furthermore includes a latching element connected to the housing, for latching into the contact chamber of the plug-in connector. The latching element has a cantilevered end region, the cantilevered end region having a first portion and a second portion connected to the first portion. The first portion extends oppositely to the insertion direction, or the first portion points obliquely outward from the housing oppositely to the insertion direction. The second portion is bent over inward with respect to the first portion. At least one support element is provided between the first portion and the second portion, which element braces the second portion against the second portion upon said application of force onto the latching element.

Abstract: An electrical contact for plugging into a contact cavity of a plug-in connector. The electrical contact includes an elongated housing extending in the plug-in direction, and an elongated catch element for latching the contact in the contact cavity. The catch element is fixed in place on the housing by a first end. By a first section, the catch element elastically and obliquely projects from the housing in an outward direction, counter to the plug-in direction, and transitions from a second, self-supporting end of the catch element to a second section of the catch element, which is bent inwardly in the direction of the housing. The second section has a rear-side area whose surface normal extends essentially counter to the plug-in direction. A projection is situated on the rear-side area projecting from the rear-side area beyond a maximum longitudinal extension of the rear-side area, when viewed counter to the plug-in direction.

Abstract: Methods to reduce a width of a channel region of Si fins and the resulting devices are disclosed. Embodiments include forming a Si fin in a Si layer; forming a channel region over the Si fin including a dummy gate with a spacer on each side; forming S/D regions at opposite ends of the Si fin; removing the dummy gate, forming a cavity; thinning sidewalls of the Si fin; and forming a high-k/metal gate in the cavity.

Abstract: A contact element for insertion in an insertion direction into a contact chamber of a plug-in connector. The contact element includes a housing extending in the insertion direction. The contact element furthermore includes a latching element connected to the housing, for latching into the contact chamber of the plug-in connector. The latching element has a cantilevered end region, the cantilevered end region having a first portion and a second portion connected to the first portion. The first portion extends oppositely to the insertion direction, or the first portion points obliquely outward from the housing oppositely to the insertion direction. The second portion is bent over inward with respect to the first portion. At least one support element is provided between the first portion and the second portion, which element braces the second portion against the second portion upon said application of force onto the latching element.

Abstract: A contact for a plug connector has: a housing; and a primary lance which projects obliquely outwardly over the housing counter to a plug-in direction and which is inwardly deflectable for restraining the contact plugged into a contact chamber of a plug connector. The primary lance has both a stiffened region and a resiliently deformable region which is curved and extends at least partially in the plug-in direction. The stiffened region has a crimp that extends in the longitudinal direction. A supporting region is additionally provided, against whose contact surface the primary lance rests in response to a tensile load on the contact.

Abstract: One illustrative method disclosed herein includes, among other things, forming a first gate structure above a fin, forming epi semiconductor material on the fin, performing at least one first etching process through a patterned sacrificial layer of material to remove at least a gate cap layer and sacrificial gate materials of the first gate structure so as to define a first isolation cavity that exposes the fin while leaving the second gate structure intact, performing at least one second etching process through the first isolation cavity to remove at least a portion of a vertical height of the fin and thereby form a first isolation trench, removing the patterned sacrificial layer of material, and forming a layer of insulating material above the epi semiconductor material and in the first isolation trench and in the first isolation cavity.

Abstract: An electrical contact for plugging into a contact cavity of a plug-in connector. The electrical contact includes an elongated housing extending in the plug-in direction, and an elongated catch element for latching the contact in the contact cavity. The catch element is fixed in place on the housing by a first end. By a first section, the catch element elastically and obliquely projects from the housing in an outward direction, counter to the plug-in direction, and transitions from a second, self-supporting end of the catch element to a second section of the catch element, which is bent inwardly in the direction of the housing. The second section has a rear-side area whose surface normal extends essentially counter to the plug-in direction. A projection is situated on the rear-side area projecting from the rear-side area beyond a maximum longitudinal extension of the rear-side area, when viewed counter to the plug-in direction.

Abstract: A socket for a high-current plug-in connection is provided, which includes a contact sleeve and a hollow cylindrical contacting system. The contacting system includes a plurality of elongated contact lamellae, is situated in an inner area of the contact sleeve, and is supported with at least a portion of its outer wall on the inner wall. The contact lamellae extend between a first collar and a second collar of the contacting system. The socket includes a contact lamella, in an area between the first collar and second collar, having an arm, via which the contact lamella is additionally connected to a collar of the contacting system in a supporting manner.

Abstract: A method can include performing an etching process to define a fin trench having a first depth, the first depth being less that a target height of fin. A method can also include forming a layer to protect sidewalls defining the fin trench. A method can also include performing a second etching process to increase a depth of fin trench.

Abstract: A method can include performing an etching process to define a fin trench having a first depth, the first depth being less that a target height of fin. A method can also include forming a layer to protect sidewalls defining the fin trench. A method can also include performing a second etching process to increase a depth of fin trench.

Abstract: A plug connector assembly for establishing an electrical plug connection, the plug connector assembly including a contact carrier and a contact. The contact is insertable into the contact carrier in a plug-in direction and extends along a longitudinal axis. It has a contact section and a connecting neck section. The contact section including a contact latching element, which includes a protrusion transverse to the longitudinal axis and is, in particular, immovable in relation to the contact section. The contact carrier includes a contact carrier housing having a chamber for receiving the contact section of the contact. The chamber includes a first inner wall generally in parallel to the plug-in direction, a contact carrier latching element, provided adjacent to the first inner wall generally transverse to the plug-in direction, which includes a contact carrier latching surface, and a second inner wall opposite the first inner wall.

Abstract: Approaches for enabling uniform epitaxial (epi) growth in an epi junction area of a semiconductor device (e.g., a fin field effect transistor device) are provided. Specifically, a semiconductor device is provided including a dummy gate and a set of fin field effect transistors (FinFETs) formed over a substrate; a spacer layer formed over the dummy gate and each of the set of FinFETs; and an epi material formed within a set of recesses in the substrate, the set of recesses formed prior to removal of an epi block layer over the dummy gate.

Abstract: There is set forth herein in one embodiment a semiconductor structure having a first region and a second region. The first region can include fins of a first fin height and the second region can include fins of a second fin height.

Abstract: One illustrative method disclosed herein includes, among other things, removing at least one, but not all, of a plurality of first features in a first patterned mask layer so as to define a modified first patterned masking layer, wherein removed first feature(s) correspond to a location where a final isolation structure will be formed, performing an etching process though the modified first patterned masking layer to form an initial isolation trench in the substrate, and performing another etching process through the modified first patterned mask layer to thereby define a plurality of fin-formation trenches in the substrate and to extend a depth of the initial isolation trench so as to define a final isolation trench for the final isolation structure.

Abstract: A method includes forming a fin in a semiconductor substrate. A plurality of sacrificial gate structures are formed above the fin. A selected one of the sacrificial gate structures is removed to define a first opening that exposes a portion of the fin. An etch process is performed through the first opening on the exposed portion of the fin to define a first recess in the fin. The first recess is filled with a dielectric material to define a diffusion break in the fin. A device includes a fin defined in a substrate, a plurality of gates formed above the fin, a plurality of recesses filled with epitaxial material defined in the fin, and a diffusion break defined at least partially in the fin between two of the recesses filled with epitaxial material and extending above the fin.