Patents by Inventor Zhiyuan Ye

Zhiyuan Ye has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11177144
    Abstract: Embodiments of the present disclosure provide a thermal process chamber that includes a substrate support, a first plurality of heating elements disposed over or below the substrate support, and a spot heating module disposed over the substrate support. The spot heating module is utilized to provide local heating of regions on a substrate disposed on the substrate support during processing. Localized heating of the substrate alters temperature profile. The shape of the beam spot produced by the spot heating module can be modified without making changes to the optics of the spot heating module.
    Type: Grant
    Filed: May 9, 2019
    Date of Patent: November 16, 2021
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Shu-Kwan Lau, Zhiyuan Ye, Zuoming Zhu, Koji Nakanishi, Toshiyuki Nakagawa, Nyi O. Myo, Schubert S. Chu
  • Patent number: 11171023
    Abstract: Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a thermal process chamber. The thermal process chamber may include a substrate support, a first plurality of heating elements disposed over the substrate support, and one or more high-energy radiant source assemblies disposed over the first plurality of heating elements. The one or more high-energy radiant source assemblies are utilized to provide local heating of cold regions on a substrate disposed on the substrate support during processing. Localized heating of the substrate improves temperature profile, which in turn improves deposition uniformity.
    Type: Grant
    Filed: October 7, 2016
    Date of Patent: November 9, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Schubert S. Chu, Douglas E. Holmgren, Kartik Shah, Palamurali Gajendra, Nyi O. Myo, Preetham Rao, Kevin Joseph Bautista, Zhiyuan Ye, Martin A. Hilkene, Errol Antonio C. Sanchez, Richard O. Collins
  • Publication number: 20210324514
    Abstract: A method and apparatus for a process chamber for thermal processing is described herein. The process chamber is a dual process chamber and shares a chamber body. The chamber body includes a first and a second set of gas inject passages. The chamber body may also include a first and a second set of exhaust ports. The process chamber may have a shared gas panel and/or a shared exhaust conduit. The process chamber described herein enables for the processing of multiple substrates simultaneously with improved process gas flow and heat distribution.
    Type: Application
    Filed: March 31, 2021
    Publication date: October 21, 2021
    Inventors: Zhiyuan YE, Shu-Kwan Danny LAU, Brian H. BURROWS, Lori WASHINGTON, Herman DINIZ, Martin A. HILKENE, Richard O. COLLINS, Nyi O. MYO, Manish HEMKAR, Schubert S. CHU
  • Publication number: 20210285105
    Abstract: Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a thermal process chamber. The thermal process chamber includes a substrate support, a first plurality of heating elements disposed over or below the substrate support, and a spot heating module disposed over the substrate support. The spot heating module is utilized to provide local heating of cold regions on a substrate disposed on the substrate support during processing. Localized heating of the substrate improves temperature profile, which in turn improves deposition uniformity.
    Type: Application
    Filed: May 26, 2021
    Publication date: September 16, 2021
    Inventors: Shu-Kwan LAU, Koji NAKANISHI, Toshiyuki NAKAGAWA, Zuoming ZHU, Zhiyuan YE, Joseph M. RANISH, Nyi O. MYO, Errol Antonio C. SANCHEZ, Schubert S. CHU
  • Publication number: 20210265416
    Abstract: A method of fabricating a semiconductor device includes forming an interconnect structure over a front side of a sensor substrate, thinning the sensor substrate from a back side of the sensor substrate, etching trenches into the sensor substrate, pre-cleaning an exposed surface of the sensor substrate, epitaxially growing a charge layer directly on the pre-cleaned exposed surface of the sensor substrate, and forming isolation structures within the etched trenches.
    Type: Application
    Filed: February 21, 2020
    Publication date: August 26, 2021
    Inventors: Papo CHEN, Schubert CHU, Errol Antonio C SANCHEZ, John Timothy BOLAND, Zhiyuan YE, Lori WASHINGTON, Xianzhi TAO, Yi-Chiau HUANG, Chen-Ying WU
  • Publication number: 20210189593
    Abstract: Methods and apparatus for an upper reflector assembly for use in a process chamber are provided herein. In some embodiments, an upper reflector assembly for use in a process chamber includes a reflector mounting ring; and upper reflector plate coupled to the reflector mounting ring and having an upper surface and lower surface, wherein the lower surface includes a plurality of linear channels extending substantially parallel to each other across the lower surface, and wherein the upper reflector plate includes air cooling slots extending from the upper surface to the lower surface.
    Type: Application
    Filed: March 27, 2020
    Publication date: June 24, 2021
    Inventors: Brian BURROWS, Shu-Kwan Danny LAU, Zhiyuan YE
  • Publication number: 20210175115
    Abstract: In one embodiment, a susceptor for thermal processing is provided. The susceptor includes an outer rim surrounding and coupled to an inner dish, the outer rim having an inner edge and an outer edge. The susceptor further includes one or more structures for reducing a contacting surface area between a substrate and the susceptor when the substrate is supported by the susceptor. At least one of the one or more structures is coupled to the inner dish proximate the inner edge of the outer rim.
    Type: Application
    Filed: February 23, 2021
    Publication date: June 10, 2021
    Inventors: Anhthu NGO, Zuoming ZHU, Balasubramanian RAMACHANDRAN, Paul BRILLHART, Edric TONG, Anzhong CHANG, Kin Pong LO, Kartik SHAH, Schubert S. CHU, Zhepeng CONG, James Francis MACK, Nyi O. MYO, Kevin Joseph BAUTISTA, Xuebin LI, Yi-Chiau HUANG, Zhiyuan YE
  • Patent number: 11029297
    Abstract: Methods and systems for determining concentrations of gases within a process chamber are provided. In one or more embodiments, a method includes introducing a first gas into a first cavity of a gas monitoring module, where the first cavity is thermally coupled to a second cavity of the gas monitoring module, and where the first cavity contains a first inlet and the first gas is introduced via the first inlet. The method includes introducing a gas mixture containing the first gas and a second gas into a second cavity, where the second cavity contains a second inlet and the gas mixture is introduced via the second inlet. The method also includes determining a first speed of sound inside the first cavity, determining a second speed of sound inside the second cavity, and determining a concentration of the second gas in the second cavity based on the first and second speeds of sound.
    Type: Grant
    Filed: June 21, 2019
    Date of Patent: June 8, 2021
    Assignee: Applied Materials, Inc.
    Inventor: Zhiyuan Ye
  • Patent number: 11021795
    Abstract: Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a thermal process chamber. The thermal process chamber includes a substrate support, a first plurality of heating elements disposed over or below the substrate support, and a spot heating module disposed over the substrate support. The spot heating module is utilized to provide local heating of cold regions on a substrate disposed on the substrate support during processing. Localized heating of the substrate improves temperature profile, which in turn improves deposition uniformity.
    Type: Grant
    Filed: October 25, 2018
    Date of Patent: June 1, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Shu-Kwan Lau, Koji Nakanishi, Toshiyuki Nakagawa, Zuoming Zhu, Zhiyuan Ye, Joseph M. Ranish, Nyi O. Myo, Errol Antonio C. Sanchez, Schubert S. Chu
  • Publication number: 20210080313
    Abstract: An electronic device manufacturing system includes: a gas supply; a mass flow controller (MFC) coupled to the gas supply; an inlet coupled to the MFC; an outlet; a control volume serially coupled to the inlet to receive a gas flow; and a flow restrictor serially coupled to the control volume and the outlet. A controller is adapted to allow the gas supply to flow gas through the control volume and the flow restrictor to achieve a stable pressure in the control volume, terminate the gas flow from the gas supply, and measure a rate of pressure decay in the control volume over time. A process chamber is coupled to a flow path, which is coupled to the mass flow controller, the process chamber to receive one or more process chemistries via the mass flow controller.
    Type: Application
    Filed: November 30, 2020
    Publication date: March 18, 2021
    Inventors: Zhiyuan Ye, Justin Hough, Marcel E. Josephson
  • Patent number: 10943803
    Abstract: Methods and gas flow control assemblies configured to deliver gas to process chamber zones in desired flow ratios. In some embodiments, assemblies include one or more MFCs and a back pressure controller (BPC). Assemblies includes a controller, a process gas supply, a distribution manifold, a pressure sensor coupled to the distribution manifold and configured to sense back pressure of the distribution manifold, a process chamber, a one or more mass flow controllers connected between the distribution manifold and process chamber to control gas flow there between, and a back pressure controller provided in fluid parallel relationship to the one or more mass flow controllers, wherein precise flow ratio control is achieved. Alternate embodiments include an upstream pressure controller configured to control flow of carrier gas to control back pressure. Further methods and assemblies for controlling zonal gas flow ratios are described, as are other aspects.
    Type: Grant
    Filed: March 5, 2019
    Date of Patent: March 9, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Kevin Brashear, Ashley M. Okada, Dennis L. Demars, Zhiyuan Ye, Jaidev Rajaram, Marcel E. Josephson
  • Patent number: 10930543
    Abstract: In one embodiment, a susceptor for thermal processing is provided. The susceptor includes an outer rim surrounding and coupled to an inner dish, the outer rim having an inner edge and an outer edge. The susceptor further includes one or more structures for reducing a contacting surface area between a substrate and the susceptor when the substrate is supported by the susceptor. At least one of the one or more structures is coupled to the inner dish proximate the inner edge of the outer rim.
    Type: Grant
    Filed: August 23, 2018
    Date of Patent: February 23, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Anhthu Ngo, Zuoming Zhu, Balasubramanian Ramachandran, Paul Brillhart, Edric Tong, Anzhong Chang, Kin Pong Lo, Kartik Shah, Schubert S. Chu, Zhepeng Cong, James Francis Mack, Nyi O. Myo, Kevin Joseph Bautista, Xuebin Li, Yi-Chiau Huang, Zhiyuan Ye
  • Publication number: 20210028075
    Abstract: A method for processing a substrate within a processing chamber comprises receiving a first radiation signal corresponding to a film on a target element disposed within the processing chamber, analyzing the first radiation signal, and controlling the processing of the substrate based on the analyzed first radiation signal. The processing chamber includes a substrate support configured to support the substrate within a processing volume and a controller coupled to a first sensing device configured to receive the first radiation signal.
    Type: Application
    Filed: July 24, 2020
    Publication date: January 28, 2021
    Inventors: Zuoming ZHU, Shu-Kwan LAU, Ala MORADIAN, Enle CHOO, Flora Fong-Song CHANG, Vilen K. NESTOROV, Zhiyuan YE, Bindusagar MARATH SANKARATHODI, Maxim D. SHAPOSHNIKOV, Surendra Singh SRIVASTAVA, Zhepeng CONG, Patricia M. LIU, Errol C. SANCHEZ, Jenny C. LIN, Schubert S. CHU, Balakrishnam R. JAMPANA
  • Publication number: 20210028280
    Abstract: Embodiments of the present disclosure relate to a transistor and methods for forming a transistor. A transistor includes a gate electrode structure disposed over a channel region, a source/drain extension region disposed adjacent to the channel region, and a source/drain region disposed on the source/drain extension region. The source/drain region includes antimony (Sb). The method of forming a transistor includes forming the source/drain extension region and forming the source/drain region on the source/drain extension region. The antimony helps prevent unwanted migration of dopants from the source/drain region to the source/drain extension region.
    Type: Application
    Filed: September 30, 2019
    Publication date: January 28, 2021
    Inventors: Patricia M. LIU, Flora Fong-Song CHANG, Zhiyuan YE
  • Patent number: 10866135
    Abstract: Mass flow verification systems and apparatus verify mass flow rates of mass flow controllers (MFCs) based on pressure decay principles. Embodiments include a location for coupling a calibrated gas flow standard or a MFC to be tested in a line to receive a gas flow from a gas supply; a control volume serially coupled to the location in the line to receive the gas flow; a flow restrictor serially coupled to the control volume; a pump serially coupled to the flow restrictor; and a controller adapted to allow the gas supply to flow gas through the mass flow control verification system to achieve a stable pressure in the control volume, terminate the gas flow from the gas supply, and measure a rate of pressure decay in the control volume over time. Numerous additional aspects are disclosed.
    Type: Grant
    Filed: March 26, 2018
    Date of Patent: December 15, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Zhiyuan Ye, Justin Hough, Marcel E. Josephson
  • Publication number: 20200373195
    Abstract: Embodiments of the disclosure include methods and apparatus for a thermal chamber with a low thermal mass. In one embodiment, a chamber is disclosed that includes a body, a susceptor positioned within the body, a first set of heating devices positioned in an upper portion of the body above the susceptor and a second set of heating devices positioned in a lower portion of the body below the susceptor, wherein each of the first set of heating devices have a heating element having a longitudinal axis extending in a first direction, and each of the second set of heating devices have a heating element having a longitudinal axis extending in a second direction that is orthogonal to the first direction, and wherein each of the heating elements have ends that are exposed to ambient environment.
    Type: Application
    Filed: April 21, 2020
    Publication date: November 26, 2020
    Inventors: Shu-Kwan Lau, Zhiyuan Ye, Martin A. Hilkene
  • Patent number: 10770319
    Abstract: Embodiments described herein provide processing chambers that include an enclosure for a processing volume, a rotatable support within the enclosure, the support having a shaft that extends outside the enclosure, wherein the shaft has a signal feature located outside the processing volume, an energy module within the enclosure, wherein the shaft extends through the energy module, one or more directed energy sources coupled to the enclosure, and one or more signalers positioned proximate to the signal feature, each signaler coupled to at least one of the directed energy sources.
    Type: Grant
    Filed: February 12, 2019
    Date of Patent: September 8, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Shu-Kwan Danny Lau, Zhiyuan Ye, Zuoming Zhu, Nyi O. Myo, Errol Antonio C. Sanchez, Schubert S. Chu
  • Patent number: 10731272
    Abstract: Methods and apparatus for deposition processes are provided herein. In some embodiments, an apparatus may include a substrate support including a susceptor plate having a pocket disposed in an upper surface of the susceptor plate and having a lip formed in the upper surface and circumscribing the pocket, the lip configured to support a substrate on the lip; and a plurality of vents extending from the pocket to the upper surface of the susceptor plate to exhaust gases trapped between the backside of the substrate and the pocket when a substrate is disposed on the lip. Methods of utilizing the inventive apparatus for depositing a layer on a substrate are also disclosed.
    Type: Grant
    Filed: February 22, 2019
    Date of Patent: August 4, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Nyi O. Myo, Kevin Bautista, Zhiyuan Ye, Schubert S. Chu, Yihwan Kim
  • Patent number: 10727093
    Abstract: Embodiments disclosed herein relate to a light pipe structure for thermal processing of semiconductor substrates. In one embodiment, a light pipe window structure for use in a thermal process chamber includes a transparent plate, and a plurality of light pipe structures formed in a transparent material that is coupled to the transparent plate, each of the plurality of light pipe structures comprising a reflective surface and having a longitudinal axis disposed in a substantially perpendicular relation to a plane of the transparent plate.
    Type: Grant
    Filed: March 12, 2015
    Date of Patent: July 28, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Paul Brillhart, Joseph M. Ranish, Aaron Muir Hunter, Edric Tong, James Francis Mack, Kin Pong Lo, Errol Antonio C. Sanchez, Zhiyuan Ye, Anzhong Chang
  • Patent number: 10684159
    Abstract: Mass flow verification systems and apparatus may verify mass flow rates of mass flow controllers (MFCs) based on choked flow principles. These systems and apparatus may include a plurality of differently-sized flow restrictors coupled in parallel. A wide range of flow rates may be verified via selection of a flow path through one of the flow restrictors based on an MFC's set point. Mass flow rates may be determined via pressure and temperature measurements upstream of the flow restrictors under choked flow conditions. Methods of verifying a mass flow rate based on choked flow principles are also provided, as are other aspects.
    Type: Grant
    Filed: June 27, 2016
    Date of Patent: June 16, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Kevin M. Brashear, Zhiyuan Ye, Justin Hough, Jaidev Rajaram, Marcel E. Josephson, Ashley M. Okada