Patents by Inventor Zhiyuan Ye

Zhiyuan Ye has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200166400
    Abstract: Mass flow verification systems and apparatus may verify mass flow rates of mass flow controllers (MFCs) based on choked flow principles. These systems and apparatus may include a plurality of differently-sized flow restrictors coupled in parallel. A wide range of flow rates may be verified via selection of a flow path through one of the flow restrictors based on an MFC's set point. Mass flow rates may be determined via pressure and temperature measurements upstream of the flow restrictors under choked flow conditions. Methods of verifying a mass flow rate based on choked flow principles are also provided, as are other aspects.
    Type: Application
    Filed: January 30, 2020
    Publication date: May 28, 2020
    Inventors: Kevin M. Brashear, Zhiyuan Ye, Justin Hough, Jaidev Rajaram, Marcel E. Josephson, Ashley M. Okada
  • Publication number: 20200051840
    Abstract: In embodiments, a process gas supply provides a carrier gas and one or more process gases to a distribution manifold. A back pressure sensor senses back pressure in the distribution manifold and provides a signal to the first controller based at least in part on the back pressure. The first controller determines a back pressure set point based at least in part on the signal. One or more mass flow controllers control the flow of the gas mixture comprising the carrier gas and the one or more process gases into one or more zones of the process chamber. An upstream pressure controller fluidly and operatively connected to the distribution manifold controls flow of the carrier gas based on the back pressure set point.
    Type: Application
    Filed: October 21, 2019
    Publication date: February 13, 2020
    Inventors: Kevin Brashear, Ashley M. Okada, Dennis L. Demars, Zhiyuan Ye, Jaidev Rajaram, Marcel E. Josephson
  • Publication number: 20200049676
    Abstract: Methods and systems for determining concentrations of gases within a process chamber are provided. In one or more embodiments, a method includes introducing a first gas into a first cavity of a gas monitoring module, where the first cavity is thermally coupled to a second cavity of the gas monitoring module, and where the first cavity contains a first inlet and the first gas is introduced via the first inlet. The method includes introducing a gas mixture containing the first gas and a second gas into a second cavity, where the second cavity contains a second inlet and the gas mixture is introduced via the second inlet. The method also includes determining a first speed of sound inside the first cavity, determining a second speed of sound inside the second cavity, and determining a concentration of the second gas in the second cavity based on the first and second speeds of sound.
    Type: Application
    Filed: June 21, 2019
    Publication date: February 13, 2020
    Inventor: Zhiyuan YE
  • Publication number: 20190371631
    Abstract: Embodiments of the present disclosure provide a thermal process chamber that includes a substrate support, a first plurality of heating elements disposed over or below the substrate support, and a spot heating module disposed over the substrate support. The spot heating module is utilized to provide local heating of regions on a substrate disposed on the substrate support during processing. Localized heating of the substrate alters temperature profile. The shape of the beam spot produced by the spot heating module can be modified without making changes to the optics of the spot heating module.
    Type: Application
    Filed: May 9, 2019
    Publication date: December 5, 2019
    Inventors: Shu-Kwan LAU, Zhiyuan YE, Zuoming ZHU, Koji NAKANISHI, Toshiyuki NAKAGAWA, Nyi O. MYO, Schubert S. CHU
  • Patent number: 10458040
    Abstract: Embodiments provided herein generally relate to an apparatus for delivering gas to a semiconductor processing chamber. An upper quartz dome of an epitaxial semiconductor processing chamber has a plurality of holes formed therein and precursor gases are provided into a processing volume of the chamber through the holes of the upper dome. Gas delivery tubes extend from the holes in the dome to a flange plate where the tubes are coupled to gas delivery lines. The gas delivery apparatus enables gases to be delivered to the processing volume above a substrate through the quartz upper dome.
    Type: Grant
    Filed: November 10, 2017
    Date of Patent: October 29, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Paul Brillhart, Anzhong Chang, Edric Tong, Kin Pong Lo, James Francis Mack, Zhiyuan Ye, Kartik Shah, Errol Antonio C. Sanchez, David K. Carlson, Satheesh Kuppurao, Joseph M. Ranish
  • Patent number: 10453721
    Abstract: Methods and gas flow control assemblies configured to deliver gas to process chamber zones in desired flow ratios. In some embodiments, assemblies include one or more MFCs and a back pressure controller (BPC). Assemblies includes a controller, a process gas supply, a distribution manifold, a pressure sensor coupled to the distribution manifold and configured to sense back pressure of the distribution manifold, a process chamber, a one or more mass flow controllers connected between the distribution manifold and process chamber to control gas flow there between, and a back pressure controller provided in fluid parallel relationship to the one or more mass flow controllers, wherein precise flow ratio control is achieved. Alternate embodiments include an upstream pressure controller configured to control flow of carrier gas to control back pressure. Further methods and assemblies for controlling zonal gas flow ratios are described, as are other aspects.
    Type: Grant
    Filed: March 15, 2016
    Date of Patent: October 22, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Kevin Brashear, Ashley M. Okada, Dennis L. Demars, Zhiyuan Ye, Jaidev Rajaram, Marcel E. Josephson
  • Patent number: 10440253
    Abstract: A method and a terminal for focusing includes: a determining step, determining a first camera focus of two camera focuses of two cameras corresponding to a first touch point of two touch points and a second camera focus of the two camera focuses of the two cameras corresponding to a second touch point of the two touch points, respectively, when a shooting preview interface corresponding to the two cameras is displayed and the two touch points are detected on the shooting preview interface; and a focus adjustment step, adjusting position of the first camera focus and the second camera focus, respectively, according to a sliding trace of the first touch point and a sliding trace of the second touch point on the shooting preview interface, in which the first camera focus and the second camera focus are on a same straight line.
    Type: Grant
    Filed: January 23, 2017
    Date of Patent: October 8, 2019
    Assignee: Yulong Computer Telecommunications Scientific (Shenzhen) Co., Ltd.
    Inventors: Jian Wang, Zhiyuan Ye
  • Publication number: 20190293476
    Abstract: Mass flow verification systems and apparatus verify mass flow rates of mass flow controllers (MFCs) based on pressure decay principles. Embodiments include a location for coupling a calibrated gas flow standard or a MFC to be tested in a line to receive a gas flow from a gas supply; a control volume serially coupled to the location in the line to receive the gas flow; a flow restrictor serially coupled to the control volume; a pump serially coupled to the flow restrictor; and a controller adapted to allow the gas supply to flow gas through the mass flow control verification system to achieve a stable pressure in the control volume, terminate the gas flow from the gas supply, and measure a rate of pressure decay in the control volume over time. Numerous additional aspects are disclosed.
    Type: Application
    Filed: March 26, 2018
    Publication date: September 26, 2019
    Inventors: Zhiyuan Ye, Justin Hough, Marcel E. Josephson
  • Publication number: 20190267263
    Abstract: Embodiments described herein provide processing chambers that include an enclosure for a processing volume, a rotatable support within the enclosure, the support having a shaft that extends outside the enclosure, wherein the shaft has a signal feature located outside the processing volume, an energy module within the enclosure, wherein the shaft extends through the energy module, one or more directed energy sources coupled to the enclosure, and one or more signalers positioned proximate to the signal feature, each signaler coupled to at least one of the directed energy sources.
    Type: Application
    Filed: February 12, 2019
    Publication date: August 29, 2019
    Inventors: Shu-Kwan Danny LAU, Zhiyuan YE, Zuoming ZHU, Nyi O. MYO, Errol Antonio C. SANCHEZ, Schubert S. CHU
  • Publication number: 20190257000
    Abstract: Methods and apparatus for deposition processes are provided herein. In some embodiments, an apparatus may include a substrate support including a susceptor plate having a pocket disposed in an upper surface of the susceptor plate and having a lip formed in the upper surface and circumscribing the pocket, the lip configured to support a substrate on the lip; and a plurality of vents extending from the pocket to the upper surface of the susceptor plate to exhaust gases trapped between the backside of the substrate and the pocket when a substrate is disposed on the lip. Methods of utilizing the inventive apparatus for depositing a layer on a substrate are also disclosed.
    Type: Application
    Filed: February 22, 2019
    Publication date: August 22, 2019
    Inventors: NYI O. MYO, KEVIN BAUTISTA, ZHIYUAN YE, SCHUBERT S. CHU, YIHWAN KIM
  • Publication number: 20190206707
    Abstract: Methods and gas flow control assemblies configured to deliver gas to process chamber zones in desired flow ratios. In some embodiments, assemblies include one or more MFCs and a back pressure controller (BPC). Assemblies includes a controller, a process gas supply, a distribution manifold, a pressure sensor coupled to the distribution manifold and configured to sense back pressure of the distribution manifold, a process chamber, a one or more mass flow controllers connected between the distribution manifold and process chamber to control gas flow there between, and a back pressure controller provided in fluid parallel relationship to the one or more mass flow controllers, wherein precise flow ratio control is achieved. Alternate embodiments include an upstream pressure controller configured to control flow of carrier gas to control back pressure. Further methods and assemblies for controlling zonal gas flow ratios are described, as are other aspects.
    Type: Application
    Filed: March 5, 2019
    Publication date: July 4, 2019
    Inventors: Kevin Brashear, Ashley M. Okada, Dennis L. Demars, Zhiyuan Ye, Jaidev Rajaram, Marcel E. Josephson
  • Publication number: 20190127851
    Abstract: Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a thermal process chamber. The thermal process chamber includes a substrate support, a first plurality of heating elements disposed over or below the substrate support, and a spot heating module disposed over the substrate support. The spot heating module is utilized to provide local heating of cold regions on a substrate disposed on the substrate support during processing. Localized heating of the substrate improves temperature profile, which in turn improves deposition uniformity.
    Type: Application
    Filed: October 25, 2018
    Publication date: May 2, 2019
    Inventors: Shu-Kwan LAU, Koji NAKANISHI, Toshiyuki NAKAGAWA, Zuoming ZHU, Zhiyuan YE, Joseph M. RANISH, Nyi O. MYO, Errol Antonio C. SANCHEZ, Schubert S. CHU
  • Patent number: 10276688
    Abstract: A device comprising Si:As source and drain extensions and Si:As or Si:P source and drain features formed using selective epitaxial growth and a method of forming the same is provided. The epitaxial layers used for the source and drain extensions and the source and drain features herein are deposited by simultaneous film formation and film etching, wherein the deposited material on the monocrystalline layer is etched at a slower rate than deposition material deposited on non-monocrystalline location of a substrate. As a result, an epitaxial layer is deposited on the monocrystalline surfaces, and a layer is not deposited on non-monocrystalline surfaces of the same base material, such as silicon.
    Type: Grant
    Filed: February 14, 2018
    Date of Patent: April 30, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Xinyu Bao, Zhiyuan Ye, Flora Fong-Song Chang, Abhishek Dube, Xuebin Li, Errol Antonio C. Sanchez, Hua Chung, Schubert S. Chu
  • Publication number: 20190119814
    Abstract: Embodiments of a precursor feed system for a semiconductor process are described herein. The precursor feed system provides improved flow control of a vaporized precursor material to a process chamber by improving flow characteristics of vaporized precursor materials, carried by a carrier gas, which may be an inert gas. The precursor feed system also reduces an occurrence of a pressure drop in conduits that deliver the precursor to the process chamber. Reducing the occurrence of the pressure drop also reduces a decrease of energy from the gas, thus reducing a tendency of the gas to condense in the along the flow path.
    Type: Application
    Filed: October 16, 2018
    Publication date: April 25, 2019
    Inventors: Zhiyuan YE, Garry KWONG, Errol Antonio C. SANCHEZ, Nyi O. MYO
  • Patent number: 10269600
    Abstract: Methods and gas flow control assemblies configured to deliver gas to process chamber zones in desired flow ratios. In some embodiments, assemblies include one or more MFCs and a back pressure controller (BPC). Assemblies includes a controller, a process gas supply, a distribution manifold, a pressure sensor coupled to the distribution manifold and configured to sense back pressure of the distribution manifold, a process chamber, a one or more mass flow controllers connected between the distribution manifold and process chamber to control gas flow there between, and a back pressure controller provided in fluid parallel relationship to the one or more mass flow controllers, wherein precise flow ratio control is achieved. Alternate embodiment include an upstream pressure controller configured to control flow of carrier gas to control back pressure. Further methods and assemblies for controlling zonal gas flow ratios are described, as are other aspects.
    Type: Grant
    Filed: March 15, 2016
    Date of Patent: April 23, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Kevin Brashear, Ashley M. Okada, Dennis L. Demars, Zhiyuan Ye, Jaidev Rajaram, Marcel E. Josephson
  • Patent number: 10260164
    Abstract: Methods and apparatus for deposition processes are provided herein. In some embodiments, an apparatus may include a substrate support comprising a susceptor plate having a pocket disposed in an upper surface of the susceptor plate and having a lip formed in the upper surface and circumscribing the pocket, the lip configured to support a substrate on the lip; and a plurality of vents extending from the pocket to the upper surface of the susceptor plate to exhaust gases trapped between the backside of the substrate and the pocket when a substrate is disposed on the lip. Methods of utilizing the inventive apparatus for depositing a layer on a substrate are also disclosed.
    Type: Grant
    Filed: May 15, 2017
    Date of Patent: April 16, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Nyi O. Myo, Kevin Bautista, Zhiyuan Ye, Schubert S. Chu, Yihwan Kim
  • Patent number: 10256322
    Abstract: A device comprising Si:As source and drain extensions and Si:As or Si:P source and drain features formed using selective epitaxial growth and a method of forming the same is provided. The epitaxial layers used for the source and drain extensions and the source and drain features herein are deposited by simultaneous film formation and film etching, wherein the deposited material on the monocrystalline layer is etched at a slower rate than deposition material deposited on non-monocrystalline location of a substrate. As a result, an epitaxial layer is deposited on the monocrystalline surfaces, and a layer is not deposited on non-monocrystalline surfaces of the same base material, such as silicon.
    Type: Grant
    Filed: March 20, 2018
    Date of Patent: April 9, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Xinyu Bao, Zhiyuan Ye, Hua Chung
  • Patent number: 10224421
    Abstract: Methods of sub-10 nm fin formation are disclosed. One method includes patterning a first dielectric layer on a substrate to form one or more projections and a first plurality of spaces, and depositing a first plurality of columns in the first plurality of spaces. The first plurality of columns are separated by a second plurality of spaces. The method also includes depositing a second dielectric layer in the second plurality of spaces to form a plurality of dummy fins, removing the first plurality of columns to form a third plurality of spaces, depositing a second plurality of columns in the third plurality of spaces, removing the one or more projections and the plurality of dummy fins to form a fourth plurality of spaces, and depositing a plurality of fins in the fourth plurality of spaces. The plurality of fins have a width between 5-10 nm.
    Type: Grant
    Filed: March 22, 2018
    Date of Patent: March 5, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Zhiyuan Ye, Xinyu Bao, Chun Yan, Hua Chung, Schubert S. Chu, Satheesh Kuppurao
  • Publication number: 20180366363
    Abstract: In one embodiment, a susceptor for thermal processing is provided. The susceptor includes an outer rim surrounding and coupled to an inner dish, the outer rim having an inner edge and an outer edge. The susceptor further includes one or more structures for reducing a contacting surface area between a substrate and the susceptor when the substrate is supported by the susceptor. At least one of the one or more structures is coupled to the inner dish proximate the inner edge of the outer rim.
    Type: Application
    Filed: August 23, 2018
    Publication date: December 20, 2018
    Inventors: Anhthu NGO, Zuoming ZHU, Balasubramanian RAMACHANDRAN, Paul BRILLHART, Edric TONG, Anzhong CHANG, Kin Pong LO, Kartik SHAH, Schubert S. CHU, Zhepeng CONG, James Francis MACK, Nyi O. MYO, Kevin Joseph BAUTISTA, Xuebin LI, Yi-Chiau HUANG, Zhiyuan YE
  • Patent number: 10132003
    Abstract: Embodiments disclosed herein generally related to a processing chamber, and more specifically a heat modulator assembly for use in a processing chamber. The heat modulator assembly includes a heat modulator housing and a plurality of heat modulators. The heat modulator housing includes a housing member defining a housing plane, a sidewall, and an annular extension. The sidewall extends perpendicular to the housing plane. The annular extension extends outward from the sidewall. The plurality of heat modulators is positioned in the housing member.
    Type: Grant
    Filed: July 21, 2017
    Date of Patent: November 20, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Shu-Kwan Lau, Surajit Kumar, Joseph M. Ranish, Zhiyuan Ye, Kartik Shah, Mehmet Tugrul Samir, Errol Antonio C. Sanchez