Multi-bandwidth envelope tracking integrated circuit and related apparatus

- Qorvo US, Inc.

A multi-bandwidth envelope tracking (ET) integrated circuit (IC) (ETIC) and related apparatus are provided. In a non-limiting example, the multi-bandwidth ETIC is coupled to an amplifier circuit(s) configured to amplify a radio frequency (RF) signal corresponding to a wide range of modulation bandwidth (e.g., from less than 90 KHz to over 40 MHz). In this regard, the multi-bandwidth ETIC is configured to generate different ET voltages based on the modulation bandwidth of the RF signal. By generating the ET voltages based on the modulation bandwidth of the RF signal, it may be possible to optimize operating efficiency of the amplifier circuit(s). As a result, it may be possible to improve power consumption and reduce heat dissipation in an apparatus employing the multi-bandwidth ETIC, thus making it possible to provide the multi-bandwidth ETIC in a wearable device.

Skip to: Description  ·  Claims  ·  References Cited  · Patent History  ·  Patent History
Description
RELATED APPLICATIONS

This application claims the benefit of provisional patent application Ser. No. 62/835,226, filed Apr. 17, 2019, the disclosure of which is hereby incorporated herein by reference in its entirety.

FIELD OF THE DISCLOSURE

The technology of the disclosure relates generally to an envelope tracking (ET) radio frequency (RF) power amplifier apparatus.

BACKGROUND

Mobile communication devices, such as smartphones, have become increasingly common in current society for providing wireless communication services. The prevalence of these mobile communication devices is driven in part by the many functions that are now enabled on such devices. Increased processing capabilities in such devices means that mobile communication devices have evolved from being pure communication tools into sophisticated mobile multimedia centers that enable enhanced user experiences.

The redefined user experience has also led to the rise of so-called wearable devices, such as smartwatches. Over time, these wearable devices have evolved from simple companion devices to mobile communication devices into full-fledged multi-functional wireless communication devices. Nowadays, most wearable electronic devices are often equipped with digital and analog circuitries capable of communicating a radio frequency (RF) signal(s) in a variety of wireless communication systems, such as long-term evolution (LTE), Wi-Fi, Bluetooth, and so on. Like mobile communication devices, wearable devices often employ sophisticated power amplifiers to amplify RF signal(s) to help improve coverage range, data throughput, and reliability of the wearable devices.

Envelope tracking (ET) is a power management technology designed to improve efficiency levels of power amplifiers. In this regard, it may be desirable to employ ET across a variety of wireless communication technologies to help reduce power consumption and thermal dissipation in wearable devices. Notably, the RF signal(s) communicated in different wireless communication systems may correspond to different modulation bandwidths (e.g., from 80 KHz to over 40 MHz). As such, it may be further desirable to ensure that the power amplifiers can maintain optimal efficiency across a wide range of modulation bandwidth.

SUMMARY

Embodiments of the disclosure relate to a multi-bandwidth envelope tracking (ET) integrated circuit (IC) (ETIC) and related apparatus. In a non-limiting example, the multi-bandwidth ETIC is coupled to an amplifier circuit(s) configured to amplify a radio frequency (RF) signal corresponding to a wide range of modulation bandwidth (e.g., from less than 90 KHz to over 40 MHz). In this regard, the multi-bandwidth ETIC is configured to generate different ET voltages based on the modulation bandwidth of the RF signal. By generating the ET voltages based on the modulation bandwidth of the RF signal, it may be possible to optimize operating efficiency of the amplifier circuit(s). As a result, it may be possible to improve power consumption and reduce heat dissipation in an apparatus employing the multi-bandwidth ETIC, thus making it possible to provide the multi-bandwidth ETIC in a wearable device.

In one aspect, a multi-bandwidth ETIC is provided. The multi-bandwidth ETIC includes an output port coupled to an amplifier circuit configured to amplify an RF signal based on a modulated voltage. The multi-bandwidth ETIC also includes a first ET voltage circuit configured to generate a first ET voltage corresponding to a first modulation bandwidth. The multi-bandwidth ETIC also includes a second ET voltage circuit configured to generate a second ET voltage corresponding to a second modulation bandwidth lower than the first modulation bandwidth. The multi-bandwidth ETIC also includes a control circuit. The control circuit is configured to activate the first ET voltage circuit and deactivate the second ET voltage circuit to provide the first ET voltage to the output port as the modulated voltage in response to the RF signal being modulated in the first modulation bandwidth. The control circuit is also configured to activate the second ET voltage circuit and deactivate the first ET voltage circuit to provide the second ET voltage to the output port as the modulated voltage in response to the RF signal being modulated in the second modulation bandwidth.

In another aspect, an ET apparatus is provided. The ET apparatus includes an amplifier circuit configured to amplify an RF signal based on a modulated voltage. The ET apparatus also includes a multi-bandwidth ETIC. The multi-bandwidth ETIC includes an output port coupled to the amplifier circuit.

The multi-bandwidth ETIC also includes a first ET voltage circuit configured to generate a first ET voltage corresponding to a first modulation bandwidth. The multi-bandwidth ETIC also includes a second ET voltage circuit configured to generate a second ET voltage corresponding to a second modulation bandwidth lower than the first modulation bandwidth. The multi-bandwidth ETIC also includes a control circuit. The control circuit is configured to activate the first ET voltage circuit and deactivate the second ET voltage circuit to provide the first ET voltage to the output port as the modulated voltage in response to the RF signal being modulated in the first modulation bandwidth. The control circuit is also configured to activate the second ET voltage circuit and deactivate the first ET voltage circuit to provide the second ET voltage to the output port as the modulated voltage in response to the RF signal being modulated in the second modulation bandwidth.

Those skilled in the art will appreciate the scope of the present disclosure and realize additional aspects thereof after reading the following detailed description of the preferred embodiments in association with the accompanying drawing figures.

BRIEF DESCRIPTION OF THE DRAWING FIGURES

The accompanying drawing figures incorporated in and forming a part of this specification illustrate several aspects of the disclosure, and together with the description serve to explain the principles of the disclosure.

FIG. 1 is a schematic diagram of an exemplary orthogonal frequency division multiplexing (OFDM) time-frequency grid illustrating at least one resource block (RB);

FIG. 2 is a schematic diagram of an exemplary envelope tracking (ET) apparatus configured according to an embodiment of the present disclosure to incorporate a multi-bandwidth ET integrated circuit (ETIC) for improving operating efficiency of an amplifier circuit across a wide range of modulation bandwidth; and

FIG. 3 is a schematic diagram of an exemplary ET apparatus configured according to another embodiment of the present disclosure.

 DETAILED DESCRIPTION

The embodiments set forth below represent the necessary information to enable those skilled in the art to practice the embodiments and illustrate the best mode of practicing the embodiments. Upon reading the following description in light of the accompanying drawing figures, those skilled in the art will understand the concepts of the disclosure and will recognize applications of these concepts not particularly addressed herein. It should be understood that these concepts and applications fall within the scope of the disclosure and the accompanying claims.

It will be understood that, although the terms first, second, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of the present disclosure. As used herein, the term “and/or” includes any and all combinations of one or more of the associated listed items.

It will be understood that when an element such as a layer, region, or substrate is referred to as being “on” or extending “onto” another element, it can be directly on or extend directly onto the other element or intervening elements may also be present. In contrast, when an element is referred to as being “directly on” or extending “directly onto” another element, there are no intervening elements present. Likewise, it will be understood that when an element such as a layer, region, or substrate is referred to as being “over” or extending “over” another element, it can be directly over or extend directly over the other element or intervening elements may also be present. In contrast, when an element is referred to as being “directly over” or extending “directly over” another element, there are no intervening elements present. It will also be understood that when an element is referred to as being “connected” or “coupled” to another element, it can be directly connected or coupled to the other element or intervening elements may be present. In contrast, when an element is referred to as being “directly connected” or “directly coupled” to another element, there are no intervening elements present.

Relative terms such as “below” or “above” or “upper” or “lower” or “horizontal” or “vertical” may be used herein to describe a relationship of one element, layer, or region to another element, layer, or region as illustrated in the Figures. It will be understood that these terms and those discussed above are intended to encompass different orientations of the device in addition to the orientation depicted in the Figures.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. As used herein, the singular forms “a,” “an,” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms “comprises,” “comprising,” “includes,” and/or “including” when used herein specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. It will be further understood that terms used herein should be interpreted as having a meaning that is consistent with their meaning in the context of this specification and the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

Embodiments of the disclosure relate to a multi-bandwidth envelope tracking (ET) integrated circuit (IC) (ETIC) and related apparatus. In a non-limiting example, the multi-bandwidth ETIC is coupled to an amplifier circuit(s) configured to amplify a radio frequency (RF) signal corresponding to a wide range of modulation bandwidth (e.g., from less than 90 KHz to over 40 MHz). In this regard, the multi-bandwidth ETIC is configured to generate different ET voltages based on the modulation bandwidth of the RF signal. By generating the ET voltages based on the modulation bandwidth of the RF signal, it may be possible to optimize operating efficiency of the amplifier circuit(s). As a result, it may be possible to improve power consumption and reduce heat dissipation in an apparatus employing the multi-bandwidth ETIC, thus making it possible to provide the multi-bandwidth ETIC in a wearable device.

Before discussing the multi-bandwidth ETIC of the present disclosure, a brief overview of a resource block (RB)-based resource allocation scheme is first provided with reference FIG. 1 to help understand the relationship between a modulation bandwidth of an RF signal and a number of RBs allocated to the RF signal. The discussion of specific exemplary aspects of a multi-bandwidth ETIC of the present disclosure starts below with reference to FIG. 2.

In this regard, FIG. 1 is a schematic diagram of an exemplary orthogonal frequency division multiplexing (OFDM) time-frequency grid 10 illustrating at least one RB 12. The OFDM time-frequency grid 10 includes a frequency axis 14 and a time axis 16. Along the frequency axis 14, there are a number of subcarriers 18(1)-18(M). The subcarriers 18(1)-18(M) are orthogonally separated from each other by a frequency spacing Δf of 15 KHz.

Along the time axis 16, there are a number of OFDM symbols 20(1)-20(N). Each intersection of the subcarriers 18(1)-18M) and the OFDM symbols 20(1)-20(N) defines a resource element (RE) 21.

In one example, the RB 12 includes twelve (12) consecutive subcarriers among the subcarriers 18(1)-18(M), and seven (7) consecutive OFDM symbols among the OFDM symbols 20(1)-20(N). In this regard, the RB 12 includes eighty-four (84) of the REs 21 (12 subcarriers×7 OFDM symbols). The RB 12 has an RB duration 22, which equals one-half millisecond (0.5 ms), along the time axis 16. Accordingly, the RB 12 has a bandwidth 24, which equals 180 KHz (15 KHz/subcarrier×12 subcarriers), along the frequency axis 14. In OFDM-based communication systems such as long-term evolution (LTE), the RB 12 is the minimum unit for allocating resources to users.

In an LTE system, an RF signal 26 can occupy multiple subcarriers among the subcarriers 18(1)-18(N). In this regard, a signal bandwidth 28 of the RF signal 26 is a function of the number of RBs 12 contained in the RF signal 26 along the frequency axis 14. In this regard, if the RF signal 26 contains ten (10) RBs 12, then the signal bandwidth 28 will be 1.8 MHz (180 KHz/RB×10 RBs). If the RF signal 26 contains twenty-five (25) RBs 12, then the signal bandwidth 28 will be 4.5 MHz (180 KHz/RB×25 RBs). If the RF signal 26 contains two hundred (200) RBs 12, then the signal bandwidth 28 will be 36 MHz (180 KHz/RB×200 RBs). In this regard, the more RBs 12 the RF signal 26 contains, the wider the signal bandwidth 28 will be, and the more subcarriers among the subcarriers 18(1)-18(M) are modulated within the RB duration 22. As such, the RF signal 26 can exhibit more and faster amplitude variations within the RB duration 22 when the RF signal 26 is modulated according to a selected modulation and coding scheme (MCS). As a result, when the RF signal 26 is amplified for transmission over a wireless medium, an ET amplifier circuit would need to operate fast enough to keep up with the faster amplitude variations of the RF signal 26 across the signal bandwidth 28 within the RB duration 22.

FIG. 2 is a schematic diagram of an exemplary ET apparatus 30 configured according to an embodiment of the present disclosure to incorporate a multi-bandwidth ETIC 32 for improving operating efficiency of an amplifier circuit 34 across a wide range of modulation bandwidth. The amplifier circuit 34 is configured to amplify an RF signal 36 based on a modulated voltage VCC and the multi-bandwidth ETIC 32 is configured to generate the modulated voltage VCC based on modulation bandwidth of the RF signal 36. In examples discussed herein, the multi-bandwidth ETIC 32 can be configured to generate a first ET voltage VCC-H when the RF signal 36 corresponds to a first modulation bandwidth (e.g., greater than 180 KHz or 1 RB) or a second ET voltage VCC-L (VCC-L<VCC-H) when the RF signal 36 corresponds to a second modulation bandwidth (e.g., approximately equals 180 KHz or 1 RB). In addition, the multi-bandwidth ETIC 32 can be further configured to generate a modulated average power tracking (APT) voltage VAPT-M when the RF signal 36 corresponds to a third modulation bandwidth (e.g., lesser than 90 KHz or ½ RB). The multi-bandwidth ETIC 32 may be further configured to generate an APT voltage VAPT regardless of the modulation bandwidth of the RF signal 36. Accordingly, the amplifier circuit 34 may receive the first ET voltage VCC-H, the second ET voltage VCC-L, the modulated APT voltage VAPT-M, or the APT voltage VAPT as the modulated voltage VCC for amplifying the RF signal 36. As such, it may be possible to keep the amplifier circuit 34 in a higher operating efficiency across a wide range of modulation bandwidth. As a result, it may be possible to improve power consumption and heat dissipation of the ET apparatus 30, thus making it possible to provide the ET apparatus 30 in a wearable device.

The multi-bandwidth ETIC 32 includes an output port 38 coupled to the amplifier circuit 34. The output port 38 is configured to selectively output one of the first ET voltage VCC-H, the second ET voltage VCC-L, the modulated APT voltage VAPTM, and the APT voltage VAPT as the modulated voltage VCC to the amplifier circuit 34 for amplifying the RF signal 36.

The multi-bandwidth ETIC 32 includes a first ET voltage circuit 40 and a second ET voltage circuit 42 configured to generate the first ET voltage VCC-H and the second ET voltage VCC-L at the output port 38, respectively. The multi-bandwidth ETIC 32 includes a tracker circuit 44 configured to generate the modulate APT voltage VAPTM and the APT voltage VAPT.

In a non-limiting example, the first ET voltage circuit 40 includes a first voltage amplifier 46 (denoted as “AMP-H”) and a first offset capacitor 48, and the second ET voltage circuit 42 includes a second voltage amplifier 50 (denoted as “AMP-L”) and a second offset capacitor 52. The first voltage amplifier 46 is configured to generate a first initial ET voltage VAMP-H based on an ET target voltage VTARGET and a feedback voltage VCCFB. The first offset capacitor 48 is coupled between the first voltage amplifier 46 and the output port 38. The first offset capacitor 48 is configured to raise the first initial ET voltage VAMP-H by a first offset voltage VOFF-H to generate the first ET voltage VCC-H (VCC-H=VAMP-H+VOFF-H) at the output port 38. In a non-limiting example, the feedback voltage VCCFB is proportional to the first ET voltage VCC-H when the first ET voltage circuit 40 is activated to generate the first ET voltage VCC-H at the output port 38.

The second voltage amplifier 50 is configured to generate a second initial ET voltage VAMP-L based on the ET target voltage VTARGET and the feedback voltage VCCFB. The second offset capacitor 52 is coupled between the second voltage amplifier 50 and the output port 38. The second offset capacitor 52 is configured to raise the second initial ET voltage VAMP-L by a second offset voltage VOFF-L to generate the second ET voltage VCC-L (VCC-L=VAMP-L+VOFF-L) at the output port 38. In a non-limiting example, the feedback voltage VCCFB is proportional to the second ET voltage VCC-L when the second ET voltage circuit 42 is activated to generate the second ET voltage VCC-L at the output port 38.

The first offset capacitor 48 is chosen to have a first capacitance and the second offset capacitor 52 is chosen to have a second capacitance substantially smaller than the first capacitance. Notably, the second capacitance is said to be substantially smaller than the first capacitance when the second capacitance is less than one-thirtieth ( 1/30) of the first capacitance. In a non-limiting example, the first capacitance can be approximately 2.2 microFarad (g) and the second capacitance can be approximately 31 nanoFarad (nF). It should be appreciated that the first capacitance and the second capacitance can also be any other suitable values.

Each of the first voltage amplifier 46 and the second voltage amplifier 50 is configured to operate based on a first supply voltage VSUP-H or a second supply voltage VSUP-L which is lower than the first supply voltage VSUP-H. In a non-limiting example, the multi-bandwidth ETIC 32 includes a supply voltage circuit 54 configured to generate the first supply voltage VSUP-H and the second supply voltage VSUP-L.

The tracker circuit 44 may include a multi-level charge pump (MCP) 56 configured to generate a low-frequency voltage VDC based on a battery voltage

VBAT. The tracker circuit 44 also includes a power inductor 58 coupled between the MCP 56 and the output port 38. The power inductor 58 is configured to induce a low-frequency current IDC (e.g., a direct current) at the output port 38 based on the low-frequency voltage VDC.

The multi-bandwidth ETIC 32 includes a control circuit 60, which can be provided as a microprocessor, a microcontroller, or a field-programmable gate array (FPGA), as an example. The control circuit 60 may be coupled to the first ET voltage circuit 40, the second ET voltage circuit 42, the tracker circuit 44, and/or the supply voltage circuit 54. As discussed in detail below, the control circuit 60 can be configured to control the first ET voltage circuit 40, the second ET voltage circuit 42, and the tracker circuit 44 to output the first ET voltage VCC-H, the second ET voltage VCC-L, the modulated APT voltage VAPT-M, or the APT voltage VAPT at the output port 38 based on the modulation bandwidth of the RF signal 36.

The control circuit 60 may receive a bandwidth indication signal 62 (e.g., from a transceiver circuit) that is indicative of the modulation bandwidth of the RF signal 36. In one example, the control circuit 60 activates the first ET voltage circuit 40 and deactivates the second ET voltage circuit 42 to provide the first ET voltage VCC-H to the amplifier circuit 34 as the modulated voltage VCC when the RF signal 36 is modulated in the first modulation bandwidth. In another example, the control circuit 60 deactivates the first ET voltage circuit 40 and activates the second ET voltage circuit 42 to provide the second ET voltage VCC-L to the amplifier circuit 34 as the modulated voltage VCC when the RF signal 36 is modulated in the second modulation bandwidth.

In another example, the control circuit 60 deactivates the first ET voltage circuit 40 and the second ET voltage circuit 42 and causes the tracker circuit 44 to generate the low-frequency voltage VDC as the modulated APT voltage VAPT-M when the RF signal 36 is modulated in the third modulation bandwidth. Accordingly, the amplifier circuit 34 receives the modulated APT voltage VAPT-M as the modulated voltage VCC.

In another example, the control circuit 60 deactivates the first ET voltage circuit 40 and the second ET voltage circuit 42 and causes the tracker circuit 44 to generate the low-frequency voltage VDC as the APT voltage VAPT when the amplifier circuit 34 is only configured to amplify the RF signal 36 based on the APT voltage VAPT. Accordingly, the amplifier circuit 34 receives the APT voltage VAPT as the modulated voltage VCC. Furthermore, the control circuit 60 is further configured to cause the tracker circuit 44 to provide the low-frequency current IDCto the amplifier circuit 34 via the output port 38.

In addition to generating the first ET voltage VCC-H, the first voltage amplifier 46 may be configured to source a first high-frequency current IAC-H (e.g., an alternating current) at the output port 38. Similarly, the second voltage amplifier 50 may be configured to source a second high-frequency current IAC-L (e.g., an alternating current) at the output port 38. In this regard, the first voltage amplifier 46 may be configured to generate a first sense current ISENSE-H to indicate an amount of the first high-frequency current IAC-H being sourced by the first voltage amplifier 46. Likewise, the second voltage amplifier 50 may be configured to generate a second sense current ISENSE-L to indicate an amount of the second high-frequency current IAC-L being sourced by the second voltage amplifier 50.

The multi-bandwidth ETIC 32 may include a first multiplexer 64 and a second multiplexer 66. The first multiplexer 64 may be configured based on a selection signal 68 to selectively provide one of the first initial ET voltage VAMP-H and the second initial ET voltage VAMP-L to the control circuit 60. The second multiplexer 66 may be configured based on the selection signal 68 to selectively provide one of the first sense current ISENSE-H and the second sense current ISENSE-L to the control circuit 60. In a non-limiting example, the selection signal 68 can be provided by the transceiver circuit, the control circuit 60, or any other control circuit. More specifically, when the first voltage amplifier 46 is activated and the second voltage amplifier 50 is deactivated, the selection signal 68 causes the first multiplexer 64 and the second multiplexer 66 to provide the first initial ET voltage VAMP-H and the first sense current ISENSE-H to the control circuit 60. In contrast, when the first voltage amplifier 46 is deactivated and the second voltage amplifier 50 is activated, the selection signal 68 causes the first multiplexer 64 and the second multiplexer 66 to provide the second initial ET voltage VAMP-L and the second sense current ISENSE-L to the control circuit 60.

The multi-bandwidth ETIC 32 may include a target voltage circuit 70 configured to generate the ET target voltage VTARGET for the first voltage amplifier 46 and the second voltage amplifier 50. The multi-bandwidth ETIC 32 may also include a digital-to-analog converter (DAC) 72 configured to generate a reference target offset voltage VOFFSET-TGT-REF, which may be a constant voltage. The multi-bandwidth ETIC 32 may include a voltage scaler 74 and a voltage combiner 76. The voltage scaler 74 may be configured to scale the ET target voltage VTARGET based on a predefined scaling factor K (0≤K≤1) to generate a scaled ET target voltage VTGT-SCALE. The voltage combiner 76 is configured to combine the reference target offset voltage VOFFSET-TGT-REF with the scaled ET target voltage VTGT-SCALE to generate a modulated target offset voltage VOFFSET-TGT-MOD.

In one non-limiting example, when the control circuit 60 determines that the RF signal 36 corresponds to the first modulation bandwidth (e.g., >180 KHz or 1 RB), the control circuit 60 activates the first voltage amplifier 46 and deactivates the second voltage amplifier 50 and sets the scaling factor K to zero (0). As a result, the modulated target offset voltage VOFFSET-TGT-MOD equals the reference target offset voltage VOFFSET-TGT-REF. Concurrently or subsequently, the first multiplexer 64 and the second multiplexer 66 may be controlled via the selection signal 68 to provide the first initial ET voltage VAMP-H and the first sense current ISENSE-H to the control circuit 60. The control circuit 60 may also control the supply voltage circuit 54 to provide the first supply voltage VSUP-H to the first voltage amplifier 46. The modulated target offset voltage VOFFSET-TGT-MOD and the first supply voltage VSUP-H may be expressed in equations (Eq. 1 and Eq. 2) below.
VOFFSET-TGT-MOD=VOFFSET-TGT-REF=VCC-MIN−Nheadroom   (Eq. 1)
VSUP-H=(VCC-MAX−VCC-MIN)+Nheadroom+Pheadroom   (Eq. 2)

In Eq. 1 and Eq. 2 above, VCC-MAX and VCC-MIN represent a maximum (e.g., a peak voltage) and a minimum (e.g., a bottom voltage) of the modulated voltage VCC, respectively. Nheadroom and Pheadroom represent voltage headrooms to VCC-MAX and VCC-MIN, respectively.

In another non-limiting example, when the control circuit 60 determines that the RF signal 36 corresponds to the second modulation bandwidth (e.g., ≈180 KHz or 1 RB), the control circuit 60 deactivates the first voltage amplifier 46 and activates the second voltage amplifier 50 and sets the scaling factor K to be between zero (0) and one (1) (0<K<1). Concurrently or subsequently, the first multiplexer 64 and the second multiplexer 66 may be controlled via the selection signal 68 to provide the second initial ET voltage VAMP-L and the second sense current ISENSE-L to the control circuit 60. The control circuit 60 may also control the supply voltage circuit 54 to provide the second supply voltage VSUP-L to the second voltage amplifier 50. The modulated target offset voltage VOFFSET-TGT-MOD and the second supply voltage VSUP-L may be expressed in equations (Eq. 3 and Eq. 4) below.
VOFFSET-TGT-MOD=VCC-MIN−Nheadroom+K*(VCC−VCC-MIN)   (Eq. 3)
VSUP-L=(1−K)*(VCC-MAX−VCC-MIN)+Nheadroom+Pheadroom   (Eq. 4)

By comparing Eq. 2 and Eq. 4, it can be seen that the second supply voltage VSUP-L is lower than the first supply voltage VSUP-H due to the scaling factor K. As an example, if K=0.5 then the second supply voltage VSUP-L is almost one-half (½) of the first supply voltage VSUP-H. Accordingly, the second voltage amplifier 50 may generate the second initial ET voltage VAMP-L at almost ½ of the first initial ET voltage VAMP-H, and the second offset capacitor 52 may be modulated to provide the second offset voltage VOFF-L that is almost ½ of the first offset voltage VOFF-H. As such, the second capacitance of the second offset capacitor 52 can be configured to be substantially less than the first capacitance of the first offset capacitor 48. As a result, the second voltage amplifier 50 may operate with an improved efficiency when the RF signal 36 is modulated in the second modulation bandwidth.

In another non-limiting example, when the control circuit 60 determines that the RF signal 36 corresponds to the third modulation bandwidth (e.g., 90 KHz or ½ RB), the control circuit 60 deactivates the first voltage amplifier 46 and the second voltage amplifier 50 and sets the scaling factor K to one (1). As a result, the modulated target offset voltage VOFFSET-TGT-MOD equals a sum of the reference target offset voltage VOFFSET-TGT-REF and the ET target voltage VTARGET (VOFFSET-TGT-MOD=VOFFSET-TGT-REF+VTARGET). The first multiplexer 64, the second multiplexer 66, and the supply voltage circuit 54 are also disabled. Accordingly, the tracker circuit 44 can be configured to generate the low-frequency voltage VDC based on the modulated target offset voltage VOFFSET-TGT-MOD. As a result, the MCP 56 generates the low-frequency voltage VDC as the modulated APT voltage VAPT-M.

The bandwidth of the modulated APT voltage VAPT-M may depend on the power inductor 58 as well as the first offset capacitor 48 or the second offset capacitor 52, as shown in the equation (Eq. 5) below.
VAPT-M Bandwidth=½π√{square root over (LC)}  (Eq. 5)

In Eq. 5 above, L represents an inductance of the power inductor 58. C represents either the first capacitance of the first offset capacitor 48 or the second capacitance of the second offset capacitor 52. In one example, the control circuit 60 may disable (e.g., bypass) the second offset capacitor 52. Accordingly, the bandwidth of the modulated APT voltage VAPT-M will depend on the inductance of the power inductor 58 and the first capacitance of the first offset capacitor 48. For example, if the inductance of the power inductor 58 equals 2 nanoHenry (nH) and the first capacitance of the first offset capacitor 48 equals 2 μF, then the bandwidth of the modulated APT voltage VAPT-M would be approximately 79.6 KHz according to Eq. 5.

In another example, the control circuit 60 may disable (e.g., bypass) the first offset capacitor 48. Accordingly, the bandwidth of the modulated APT voltage VAPT-M will depend on the second capacitance of the second offset capacitor 52. As discussed above, the second capacitance of the second offset capacitor 52 may be substantially smaller than the first capacitance of the first offset capacitor 48. As such, the bandwidth of the modulated APT voltage VAPT-M can be higher when the control circuit 60 deactivates the first offset capacitor 48.

In another non-limiting example, the control circuit 60 may determine (e.g., based on the bandwidth indication signal 62) that it may be desirable for the amplifier circuit 34 to amplify the RF signal 36 based on the APT voltage VAPT. In this regard, the control circuit 60 deactivates the first voltage amplifier 46 and the second voltage amplifier 50 and sets the scaling factor K to zero (0). As a result, the modulated target offset voltage VOFFSET-TGT-MOD equals the reference target offset voltage VOFFSET-TGT-REF. The first multiplexer 64, the second multiplexer 66, and the supply voltage circuit 54 are also disabled. Accordingly, the tracker circuit 44 can be configured to generate the low-frequency voltage VDC based on the reference target offset voltage VOFFSET-TGT-REF (e.g., a constant voltage). As such, the MCP 56 generates the low-frequency voltage VDC as the APT voltage VAPT, which is also a constant voltage.

Alternative to employing the first voltage amplifier 46 and the second voltage amplifier 50 in the first ET voltage circuit 40 and the second ET voltage circuit 42, respectively, it may be possible to share a single voltage amplifier between the first ET voltage circuit 40 and the second ET voltage circuit 42. In this regard, FIG. 3 is a schematic diagram of an exemplary ET apparatus 78 configured according to another embodiment of the present disclosure. Common elements between FIGS. 2 and 3 are shown therein with common element numbers and will not be re-described herein.

The ET apparatus 78 includes a multi-bandwidth ETIC 80. The multi-bandwidth ETIC 80 includes a first ET voltage circuit 82 and a second ET voltage circuit 84 configured to share a voltage amplifier 86. The multi-bandwidth ETIC 80 may include a switch Sv configured to alternately couple the voltage amplifier 86 to the first offset capacitor 48 or the second offset capacitor 52.

In one non-limiting example, when the control circuit 60 determines that the RF signal 36 corresponds to the first modulation bandwidth (e.g., >180 KHz or 1 RB), the control circuit 60 activates the first ET voltage circuit 82 by coupling the voltage amplifier 86 to the first offset capacitor 48. The control circuit 60 may also control the supply voltage circuit 54 to provide the first supply voltage VSUP-H, as shown in Eq. 2, to the voltage amplifier 86. Accordingly, the voltage amplifier 86 generates an initial ET voltage VAMP based on the ET target voltage VTARGET and the first supply voltage VSUP-H. The first offset capacitor 48 raises the initial ET voltage VAMP by the first offset voltage VOFF-H to generate the first ET voltage VCC-H at the output port 38. Similar to the first voltage amplifier 46 in FIG. 2, the voltage amplifier 86 may be configured to source the first high-frequency current IAC-H and generate a sense current ISENSE proportional to the first high-frequency current IAC-H.

In another non-limiting example, when the control circuit 60 determines that the RF signal 36 corresponds to the second modulation bandwidth (e.g., 180 KHz or 1 RB), the control circuit 60 activates the second ET voltage circuit 84 by coupling the voltage amplifier 86 to the second offset capacitor 52. The control circuit 60 may also control the supply voltage circuit 54 to provide the second supply voltage VSUP-L, as shown in Eq. 4, to the voltage amplifier 86. Accordingly, the voltage amplifier 86 generates the initial ET voltage VAMP based on the ET target voltage VTARGET and the second supply voltage VSUP-L. The second offset capacitor 52 raises the initial ET voltage VAMP by the second offset voltage VOFF-L to generate the second ET voltage VCC-L at the output port 38. Similar to the second voltage amplifier 50 in FIG. 2, the voltage amplifier 86 may be configured to source the second high-frequency current IAC-L and generate the sense current ISENSE proportional to the second high-frequency current IAC-L.

Given that the first ET voltage circuit 82 and the second ET voltage circuit 84 share the voltage amplifier 86, it may be possible to eliminate the first multiplexer 64 and the second multiplexer 66 from the multi-bandwidth ETIC 80. As a result, the control circuit 60 can be configured to receive the initial ET voltage VAMP, the sense current ISENSE, and the feedback voltage VCCFB.

Those skilled in the art will recognize improvements and modifications to the preferred embodiments of the present disclosure. All such improvements and modifications are considered within the scope of the concepts disclosed herein and the claims that follow.

Claims

1. A multi-bandwidth envelope tracking (ET) integrated circuit (IC) (ETIC) comprising:

an output port coupled to an amplifier circuit configured to amplify a radio frequency (RF) signal based on a modulated voltage;
a first ET voltage circuit configured to generate a first ET voltage corresponding to a first modulation bandwidth;
a second ET voltage circuit configured to generate a second ET voltage corresponding to a second modulation bandwidth lower than the first modulation bandwidth; and
a control circuit configured to: activate the first ET voltage circuit and deactivate the second ET voltage circuit to provide the first ET voltage to the output port as the modulated voltage in response to the RF signal being modulated in the first modulation bandwidth; and activate the second ET voltage circuit and deactivate the first ET voltage circuit to provide the second ET voltage to the output port as the modulated voltage in response to the RF signal being modulated in the second modulation bandwidth.

2. The multi-bandwidth ETIC of claim 1 wherein:

the first ET voltage circuit comprises: a first voltage amplifier configured to generate a first initial ET voltage and source a first high-frequency current based on an ET target voltage and a first supply voltage; and a first offset capacitor having a first capacitance and configured to raise the first initial ET voltage by a first offset voltage to generate the first ET voltage; and
the second ET voltage circuit comprises: a second voltage amplifier configured to generate a second initial ET voltage and source a second high-frequency current based on the ET target voltage and a second supply voltage; and a second offset capacitor having a second capacitance and configured to raise the second initial ET voltage by a second offset voltage to generate the second ET voltage.

3. The multi-bandwidth ETIC of claim 2 wherein the second capacitance is substantially smaller than the first capacitance.

4. The multi-bandwidth ETIC of claim 2 wherein the second supply voltage is lower than the first supply voltage.

5. The multi-bandwidth ETIC of claim 2 further comprising a tracker circuit comprising:

a multi-level charge pump (MCP) configured to generate a low-frequency voltage; and
a power inductor configured to induce a low-frequency current based on the low-frequency voltage.

6. The multi-bandwidth ETIC of claim 5 wherein the control circuit is further configured to modulate the low-frequency voltage based on a scaled ET target voltage lower than the ET target voltage when the control circuit activates the second ET voltage circuit and deactivates the first ET voltage circuit.

7. The multi-bandwidth ETIC of claim 6 further comprising a voltage scaler configured to scale the ET target voltage by a predefined scaling factor to generate the scaled ET target voltage.

8. The multi-bandwidth ETIC of claim 6 wherein the control circuit is further configured to modulate the low-frequency voltage based on a feedback of the second initial ET voltage and a feedback of the second high-frequency current.

9. The multi-bandwidth ETIC of claim 1 wherein:

the first ET voltage circuit comprises: a voltage amplifier configured to generate an initial ET voltage and source a first high-frequency current based on an ET target voltage and a first supply voltage; and a first offset capacitor having a first capacitance and configured to raise the initial ET voltage by a first offset voltage to generate the first ET voltage; and
the second ET voltage circuit comprises: the voltage amplifier configured to generate the initial ET voltage and source a second high-frequency current based on the ET target voltage and a second supply voltage; and a second offset capacitor having a second capacitance and configured to raise the initial ET voltage by a second offset voltage to generate the second ET voltage.

10. The multi-bandwidth ETIC of claim 9 wherein the control circuit is further configured to:

activate the first ET voltage circuit by coupling the voltage amplifier to the first offset capacitor in response to the RF signal being modulated in the first modulation bandwidth; and
activate the second ET voltage circuit by coupling the voltage amplifier to the second offset capacitor in response to the RF signal being modulated in the second modulation bandwidth.

11. An envelope tracking (ET) apparatus comprising:

an amplifier circuit configured to amplify a radio frequency (RF) signal based on a modulated voltage; and
a multi-bandwidth ET integrated circuit (ETIC) comprising: an output port coupled to the amplifier circuit; a first ET voltage circuit configured to generate a first ET voltage corresponding to a first modulation bandwidth; a second ET voltage circuit configured to generate a second ET voltage corresponding to a second modulation bandwidth lower than the first modulation bandwidth; and a control circuit configured to: activate the first ET voltage circuit and deactivate the second ET voltage circuit to provide the first ET voltage to the output port as the modulated voltage in response to the RF signal being modulated in the first modulation bandwidth; and activate the second ET voltage circuit and deactivate the first ET voltage circuit to provide the second ET voltage to the output port as the modulated voltage in response to the RF signal being modulated in the second modulation bandwidth.

12. The ET apparatus of claim 11 wherein:

the first ET voltage circuit comprises: a first voltage amplifier configured to generate a first initial ET voltage and source a first high-frequency current based on an ET target voltage and a first supply voltage; and a first offset capacitor having a first capacitance and configured to raise the first initial ET voltage by a first offset voltage to generate the first ET voltage; and
the second ET voltage circuit comprises: a second voltage amplifier configured to generate a second initial ET voltage and source a second high-frequency current based on the ET target voltage and a second supply voltage; and a second offset capacitor having a second capacitance and configured to raise the second initial ET voltage by a second offset voltage to generate the second ET voltage.

13. The ET apparatus of claim 12 wherein the second capacitance is substantially smaller than the first capacitance.

14. The ET apparatus of claim 12 wherein the second supply voltage is lower than the first supply voltage.

15. The ET apparatus of claim 12 wherein the multi-bandwidth ETIC further comprises a tracker circuit comprising:

a multi-level charge pump (MCP) configured to generate a low-frequency voltage; and
a power inductor configured to induce a low-frequency current based on the low-frequency voltage.

16. The ET apparatus of claim 15 wherein the control circuit is further configured to modulate the low-frequency voltage based on a scaled ET target voltage lower than the ET target voltage when the control circuit activates the second ET voltage circuit and deactivates the first ET voltage circuit.

17. The ET apparatus of claim 16 wherein the multi-bandwidth ETIC further comprises a voltage scaler configured to scale the ET target voltage by a predefined scaling factor to generate the scaled ET target voltage.

18. The ET apparatus of claim 16 wherein the control circuit is further configured to modulate the low-frequency voltage based on a feedback of the second initial ET voltage and a feedback of the second high-frequency current.

19. The ET apparatus of claim 11 wherein:

the first ET voltage circuit comprises: a voltage amplifier configured to generate an initial ET voltage and source a first high-frequency current based on an ET target voltage and a first supply voltage; and a first offset capacitor having a first capacitance and configured to raise the initial ET voltage by a first offset voltage to generate the first ET voltage; and
the second ET voltage circuit comprises: the voltage amplifier configured to generate the initial ET voltage and source a second high-frequency current based on the ET target voltage and a second supply voltage; and a second offset capacitor having a second capacitance and configured to raise the initial ET voltage by a second offset voltage to generate the second ET voltage.

20. The ET apparatus of claim 19 wherein the control circuit is further configured to:

activate the first ET voltage circuit by coupling the voltage amplifier to the first offset capacitor in response to the RF signal being modulated in the first modulation bandwidth; and
activate the second ET voltage circuit by coupling the voltage amplifier to the second offset capacitor in response to the RF signal being modulated in the second modulation bandwidth.
Referenced Cited
U.S. Patent Documents
5838732 November 17, 1998 Carney
6107862 August 22, 2000 Mukainakano et al.
6141377 October 31, 2000 Sharper et al.
6985033 January 10, 2006 Shirali et al.
7043213 May 9, 2006 Robinson et al.
7471155 December 30, 2008 Levesque
7570931 August 4, 2009 McCallister et al.
8461928 June 11, 2013 Yahav et al.
8493141 July 23, 2013 Khlat et al.
8588713 November 19, 2013 Khlat
8718188 May 6, 2014 Balteanu et al.
8725218 May 13, 2014 Brown et al.
8774065 July 8, 2014 Khlat et al.
8803603 August 12, 2014 Wimpenny
8818305 August 26, 2014 Schwent et al.
8854129 October 7, 2014 Wilson
8879665 November 4, 2014 Xia et al.
8913690 December 16, 2014 Onishi
8989682 March 24, 2015 Ripley et al.
9020451 April 28, 2015 Khlat
9041364 May 26, 2015 Khlat
9041365 May 26, 2015 Kay et al.
9055529 June 9, 2015 Shih
9065509 June 23, 2015 Yan et al.
9069365 June 30, 2015 Brown et al.
9098099 August 4, 2015 Park et al.
9166538 October 20, 2015 Hong et al.
9166830 October 20, 2015 Camuffo et al.
9167514 October 20, 2015 Dakshinamurthy et al.
9197182 November 24, 2015 Baxter et al.
9225362 December 29, 2015 Drogi et al.
9247496 January 26, 2016 Khlat
9263997 February 16, 2016 Vinayak
9270230 February 23, 2016 Henshaw et al.
9270239 February 23, 2016 Drogi et al.
9271236 February 23, 2016 Drogi
9280163 March 8, 2016 Kay et al.
9288098 March 15, 2016 Yan et al.
9298198 March 29, 2016 Kay et al.
9344304 May 17, 2016 Cohen
9356512 May 31, 2016 Chowdhury et al.
9377797 June 28, 2016 Kay et al.
9379667 June 28, 2016 Khlat et al.
9515622 December 6, 2016 Nentwig et al.
9520907 December 13, 2016 Peng et al.
9584071 February 28, 2017 Khlat
9595869 March 14, 2017 Lerdworatawee
9595981 March 14, 2017 Khlat
9596110 March 14, 2017 Jiang et al.
9614477 April 4, 2017 Rozenblit et al.
9634666 April 25, 2017 Krug
9748845 August 29, 2017 Kotikalapoodi
9806676 October 31, 2017 Balteanu et al.
9831834 November 28, 2017 Balteanu et al.
9837962 December 5, 2017 Mathe et al.
9923520 March 20, 2018 Abdelfattah et al.
10003416 June 19, 2018 Lloyd
10090808 October 2, 2018 Henzler et al.
10097145 October 9, 2018 Khlat et al.
10110169 October 23, 2018 Khesbak et al.
10158329 December 18, 2018 Khlat
10158330 December 18, 2018 Khlat
10170989 January 1, 2019 Balteanu et al.
10291181 May 14, 2019 Kim et al.
10326408 June 18, 2019 Khlat et al.
10382071 August 13, 2019 Rozek et al.
10476437 November 12, 2019 Nag et al.
20020167827 November 14, 2002 Umeda et al.
20040266366 December 30, 2004 Robinson et al.
20050090209 April 28, 2005 Behzad
20050227646 October 13, 2005 Yamazaki et al.
20050232385 October 20, 2005 Yoshikawa et al.
20060240786 October 26, 2006 Liu
20070052474 March 8, 2007 Saito
20070258602 November 8, 2007 Vepsalainen et al.
20090016085 January 15, 2009 Rader et al.
20090045872 February 19, 2009 Kenington
20090191826 July 30, 2009 Takinami et al.
20100308919 December 9, 2010 Adamski et al.
20110074373 March 31, 2011 Lin
20110136452 June 9, 2011 Pratt et al.
20110175681 July 21, 2011 Inamori et al.
20110279179 November 17, 2011 Vice
20120194274 August 2, 2012 Fowers et al.
20120200435 August 9, 2012 Ngo et al.
20120299645 November 29, 2012 Southcombe et al.
20120299647 November 29, 2012 Honjo et al.
20130021827 January 24, 2013 Ye
20130100991 April 25, 2013 Woo
20130130724 May 23, 2013 Kumar Reddy et al.
20130162233 June 27, 2013 Marty
20130187711 July 25, 2013 Goedken et al.
20130200865 August 8, 2013 Wimpenny
20130271221 October 17, 2013 Levesque et al.
20140009226 January 9, 2014 Severson
20140028370 January 30, 2014 Wimpenny
20140028390 January 30, 2014 Davis
20140057684 February 27, 2014 Khlat
20140103995 April 17, 2014 Langer
20140155002 June 5, 2014 Dakshinamurthy et al.
20140184335 July 3, 2014 Nobbe et al.
20140199949 July 17, 2014 Nagode et al.
20140210550 July 31, 2014 Mathe et al.
20140218109 August 7, 2014 Wimpenny
20140235185 August 21, 2014 Drogi
20140266423 September 18, 2014 Drogi et al.
20140266428 September 18, 2014 Chiron et al.
20140315504 October 23, 2014 Sakai et al.
20140361830 December 11, 2014 Mathe et al.
20150048883 February 19, 2015 Vinayak
20150071382 March 12, 2015 Wu et al.
20150098523 April 9, 2015 Lim et al.
20150155836 June 4, 2015 Midya et al.
20150188432 July 2, 2015 Vannorsdel et al.
20150236654 August 20, 2015 Jiang et al.
20150236729 August 20, 2015 Peng et al.
20150280652 October 1, 2015 Cohen
20150333781 November 19, 2015 Alon et al.
20160065137 March 3, 2016 Khlat
20160099687 April 7, 2016 Khlat
20160105151 April 14, 2016 Langer
20160118941 April 28, 2016 Wang
20160126900 May 5, 2016 Shute
20160173031 June 16, 2016 Langer
20160181995 June 23, 2016 Nentwig et al.
20160187627 June 30, 2016 Abe
20160197627 July 7, 2016 Qin et al.
20160226448 August 4, 2016 Wimpenny
20160294587 October 6, 2016 Jiang et al.
20170141736 May 18, 2017 Pratt et al.
20170302183 October 19, 2017 Young
20170317913 November 2, 2017 Kim et al.
20170338773 November 23, 2017 Balteanu et al.
20180013465 January 11, 2018 Chiron et al.
20180048265 February 15, 2018 Nentwig
20180048276 February 15, 2018 Khlat
20180076772 March 15, 2018 Khesbak et al.
20180123453 May 3, 2018 Puggelli et al.
20180288697 October 4, 2018 Camufto et al.
20180302042 October 18, 2018 Zhang et al.
20180309414 October 25, 2018 Khlat et al.
20180367101 December 20, 2018 Chen et al.
20190044480 February 7, 2019 Khlat
20190068234 February 28, 2019 Khlat
20190097277 March 28, 2019 Fukae
20190109566 April 11, 2019 Folkmann et al.
20190109613 April 11, 2019 Khlat et al.
20190222175 July 18, 2019 Khlat et al.
20190222178 July 18, 2019 Khlat et al.
20190267956 August 29, 2019 Granger-Jones et al.
20200007090 January 2, 2020 Khlat et al.
20200036337 January 30, 2020 Khlat
20200136561 April 30, 2020 Khlat et al.
20200136575 April 30, 2020 Khlat et al.
20200153394 May 14, 2020 Khlat et al.
20200177131 June 4, 2020 Khlat
20200204116 June 25, 2020 Khlat
20200228063 July 16, 2020 Khlat
20200259456 August 13, 2020 Khlat
20200259685 August 13, 2020 Khlat
20200266766 August 20, 2020 Khlat et al.
Foreign Patent Documents
3174199 May 2017 EP
Other references
  • Non-Final Office Action for U.S. Appl. No. 14/836,634, dated May 16, 2016, 9 pages.
  • Non-Final Office Action for U.S. Appl. No. 14/868,890, dated Jul. 14, 2016, 13 pages.
  • Non-Final Office Action for U.S. Appl. No. 15/792,909, dated May 18, 2018, 13 pages.
  • Notice of Allowance for U.S. Appl. No. 15/459,449, dated Mar. 28, 2018, 7 pages.
  • Notice of Allowance for U.S. Appl. No. 15/723,460, dated Jul. 24, 2018, 8 pages.
  • Notice of Allowance for U.S. Appl. No. 15/704,131, dated Jul. 17, 2018, 7 pages.
  • Notice of Allowance for U.S. Appl. No. 15/728,202, dated Aug. 2, 2018, 7 pages.
  • Non-Final Office Action for U.S. Appl. No. 15/888,300, dated Aug. 28, 2018, 11 pages.
  • Notice of Allowance for U.S. Appl. No. 15/792,909, dated Dec. 19, 2018, 11 pages.
  • Notice of Allowance for U.S. Appl. No. 15/993,705, dated Oct. 31, 2018, 7 pages.
  • Pfister, Henry, “Discrete-Time Signal Processing,” Lecture Note, pfister.ee.duke.edu/courses/ece485/dtsp.pdf, Mar. 3, 2017, 22 pages.
  • Non-Final Office Action for U.S. Appl. No. 15/888,260, dated May 2, 2019, 14 pages.
  • Non-Final Office Action for U.S. Appl. No. 15/986,948, dated Mar. 28, 2019, 8 pages.
  • Non-Final Office Action for U.S. Appl. No. 16/018,426, dated Apr. 11, 2019, 11 pages.
  • Supplemental Notice of Allowability for U.S. Appl. No. 15/902,244, dated Mar. 20, 2019, 6 pages.
  • Notice of Allowance for U.S. Appl. No. 15/902,244, dated Feb. 8, 2019, 8 pages.
  • Advisory Action for U.S. Appl. No. 15/888,300, dated Jun. 5, 2019, 3 pages.
  • Notice of Allowance for U.S. Appl. No. 15/984,566, dated May 21, 2019, 6 pages.
  • Notice of Allowance for U.S. Appl. No. 16/150,556, dated Jul. 29, 2019, 7 pages.
  • Non-Final Office Action for U.S. Appl. No. 15/888,300, dated Jun. 27, 2019, 17 pages.
  • Final Office Action for U.S. Appl. No. 15/986,948, dated Aug. 27, 2019, 9 pages.
  • Advisory Action for U.S. Appl. No. 15/986,948, dated Nov. 8, 2019, 3 pages.
  • Notice of Allowance for U.S. Appl. No. 15/986,948, dated Dec. 13, 2019, 7 pages.
  • Final Office Action for U.S. Appl. No. 16/018,426, dated Sep. 4, 2019, 12 pages.
  • Advisory Action for U.S. Appl. No. 16/018,426, dated Nov. 19, 2019, 3 pages.
  • Notice of Allowance for U.S. Appl. No. 16/180,887, dated Jan. 13, 2020, 8 pages.
  • Notice of Allowance for U.S. Appl. No. 16/155,127, dated Jun. 1, 2020, 8 pages.
  • Corrected Notice of Allowability for U.S. Appl. No. 15/888,300, dated May 13, 2020, 7 pages.
  • Non-Final Office Action for U.S. Appl. No. 16/246,859, dated Apr. 28, 2020, 9 pages.
  • Notice of Allowance for U.S. Appl. No. 16/354,234, dated Apr. 24, 2020, 9 pages.
  • Notice of Allowance for U.S. Appl. No. 16/122,611, dated Dec. 1, 2020, 9 pages.
  • Advisory Action for U.S. Appl. No. 16/174,535, dated Sep. 24, 2020, 3 pages.
  • Notice of Allowance for U.S. Appl. No. 16/174,535, dated Oct. 29, 2020, 7 pages.
  • Final Office Action for U.S. Appl. No. 16/284,023, dated Nov. 3, 2020, 7 pages.
  • Non-Final Office Action for U.S. Appl. No. 16/416,812, dated Oct. 16, 2020, 8 pages.
  • Non-Final Office Action for U.S. Appl. No. 16/514,051, dated Nov. 13, 2020, 9 pages.
  • Quayle Action for U.S. Appl. No. 16/589,940, dated Dec. 4, 2020, 8 pages.
  • U.S. Appl. No. 16/354,234, filed Mar. 15, 2019.
  • U.S. Appl. No. 16/246,859, filed Jan. 14, 2019.
  • U.S. Appl. No. 16/180,887, filed Nov. 5, 2018.
  • U.S. Appl. No. 16/514,051, filed Jul. 17, 2019.
  • U.S. Appl. No. 16/435,940, filed Jun. 10, 2019.
  • U.S. Appl. No. 16/589,940, filed Oct. 1, 2019.
  • Non-Final Office Action for U.S. Appl. No. 16/122,611, dated Mar. 11, 2020, 16 pages.
  • Notice of Allowance for U.S. Appl. No. 15/888,300, dated Jan. 14, 2020, 11 pages.
  • Corrected Notice of Allowability for U.S. Appl. No. 15/888,300, dated Feb. 25, 2020, 7 pages.
  • Notice of Allowance for U.S. Appl. No. 16/018,426, dated Mar. 31, 2020, 7 pages.
  • Non-Final Office Action for U.S. Appl. No. 16/174,535, dated Feb. 4, 2020, 7 pages.
  • Quayle Action for U.S. Appl. No. 16/354,234, dated Mar. 6, 2020, 8 pages.
  • Final Office Action for U.S. Appl. No. 16/122,611, dated Sep. 18, 2020, 17 pages.
  • Final Office Action for U.S. Appl. No. 16/174,535, dated Jul. 1, 2020, 7 pages.
  • Notice of Allowance for U.S. Appl. No. 16/246,859, dated Sep. 18, 2020, 8 pages.
  • Non-Final Office Action for U.S. Appl. No. 16/284,023, dated Jun. 24, 2020, 7 pages.
  • Quayle Action for U.S. Appl. No. 16/421,905, dated Aug. 25, 2020, 5 pages.
  • Non-Final Office Action for U.S. Appl. No. 16/435,940, dated Jul. 23, 2020, 6 pages.
  • Non-Final Office Action for U.S. Appl. No. 16/774,060, dated Aug. 17, 2020, 6 pages.
  • Notice of Allowance for U.S. Appl. No. 16/122,611, dated Jan. 13, 2021, 8 pages.
  • Notice of Allowance for U.S. Appl. No. 16/284,023, dated Jan. 19, 2021, 7 pages.
  • Notice of Allowance for U.S. Appl. No. 16/416,812, dated Feb. 16, 2021, 8 pages.
  • Non-Final Office Action for U.S. Appl. No. 16/689,236 dated Mar. 2, 2021, 15 pages.
  • Notice of Allowance for U.S. Appl. No. 16/435,940, dated Dec. 21, 2020, 7 pages.
  • Notice of Allowance for U.S. Appl. No. 16/774,060, dated Feb. 3, 2021, 7 pages.
  • Notice of Allowance for U.S. Appl. No. 16/661,061, dated Feb. 10, 2021, 7 pages.
  • Notice of Allowance for U.S. Appl. No. 16/122,611, dated Apr. 1, 2021, 8 pages.
  • Non-Final Office Action for U.S. Appl. No. 16/582,471, dated Mar. 24, 2021, 11 pages.
Patent History
Patent number: 11018627
Type: Grant
Filed: Oct 2, 2019
Date of Patent: May 25, 2021
Patent Publication Number: 20200336105
Assignee: Qorvo US, Inc. (Greensboro, NC)
Inventor: Nadim Khlat (Cugnaux)
Primary Examiner: Henry Choe
Application Number: 16/590,790
Classifications
Current U.S. Class: Including Particular Power Supply Circuitry (330/297)
International Classification: H03F 1/30 (20060101); H03F 1/02 (20060101); H03F 3/213 (20060101); H03F 3/21 (20060101);