Capacitor, semiconductor device having the same, and method of manufacturing the semiconductor device
A semiconductor device with a stack type capacitor having a lower electrode formed of an aluminum-doped metal, and a manufacturing method thereof are provided. The semiconductor device includes: a semiconductor substrate having a gate structure and an active region; an interlayer dielectric film formed on the active region; a lower electrode formed of a metal containing aluminum on the interlayer dielectric film; a dielectric layer formed on the lower electrode; an upper electrode formed on the dielectric layer; and a plug formed in the interlayer dielectric film to electrically connect the active region with the lower electrode. The method includes: forming a gate structure and an active region on a semiconductor substrate; forming an interlayer dielectric film on the resultant semiconductor substrate; forming a plug in the interlayer dielectric film to electrically connect with the active region; forming a mold oxidation layer on the plug and the interlayer dielectric film; patterning the mold oxidation layer with a predetermined pattern and forming a lower electrode of material containing aluminum on the plug; and sequentially forming a dielectric layer and an upper electrode on the lower electrode.
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This application claims the priority of Korean Patent Application No. 2003-75218, filed on Oct. 27, 2003, in the Korean Intellectual Property Office, the disclosure of which is incorporated herein in its entirety by reference.
1. Field of the Invention
The present invention relates to a method of manufacturing a semiconductor device, and more particularly, to a semiconductor device with a stack type capacitor having a lower electrode formed of an aluminum-doped metal, and a method of manufacturing the semiconductor device.
2. Description of the Related Art
As the level of integration of a semiconductor device becomes higher, an occupation area of a capacitor is reduced in a memory cell. The resultant reduction of cell capacitance causes hindrance in increasing the level of integration of a Dynamic Random Access Memory (DRAM).
To solve the above drawback caused by the reduction of the cell capacitance, a capacitor area should be secured. For this, a study has been vigorously progressed to increase capacitance by providing a lower electrode having a cylindrical or semispherical shape to increase a spatial area, or applying a dielectric film of a high dielectric constant to a capacitor.
Since the dielectric film uses material, which has the high dielectric constant and uses reaction gas containing oxygen, to increase the capacitance, a very serious drawback of oxidation occurs when the capacitor is formed.
As shown in
The lower electrode 22 is generally formed of TiN. However, due to reaction gas O3 that is used to deposit the dielectric layer 24 with the high dielectric constant, TiN of the lower electrode 22 that underlies the dielectric layer 24 is easily oxidized to cause internal stress. Accordingly, the conventional semiconductor device has a drawback in that a gate stack is collapsed and the dielectric layer 24 with the high dielectric constant is not formed.
As shown in
The present invention provides a stack type capacitor in which a lower electrode is formed of TiAlN with oxidation resistance, which is obtained using a negativity of Al-ligand to react with a metal precursor and using NH3, to be prevented from being oxidized even when a subsequential process is performed using a reaction gas containing oxygen.
The present invention also provides a stack type capacitor in which a diffusion prevention film underlying a lower electrode is formed of TiAlN with oxidation resistance to prevent the lower electrode from being oxidized even when a subsequential process is performed using a reaction gas containing oxygen.
The present invention also provides a method of manufacturing a stack type capacitor in which oxidation can be prevented even when a manufacture process is performed using oxygen as reaction gas.
The present invention also provides a semiconductor device having a stack type capacitor in which oxidation can be prevented even when a manufacture process is performed using oxygen as reaction gas.
The present invention also provides a method of manufacturing a semiconductor device having a stack type capacitor in which oxidation can be prevented even when a manufacture process is performed using oxygen as reaction gas.
According to an aspect of the present invention, there is provided a capacitor including: a lower electrode formed of a metal containing aluminum; a dielectric layer formed using a reaction gas containing oxygen on the lower electrode; and an upper electrode formed on the dielectric layer.
According to another aspect of the present invention, there is provided a semiconductor device having a capacitor, the semiconductor device including: a semiconductor substrate having a gate structure and an active region; an interlayer dielectric film formed on the active region; a lower electrode formed of a metal containing aluminum on the interlayer dielectric film; a dielectric layer formed on the lower electrode; an upper electrode formed on the dielectric layer; and a plug formed in the interlayer dielectric film to electrically connect the active region with the lower electrode.
According to a further aspect of the present invention, there is provided a method of manufacturing a semiconductor device having a capacitor, the method including: forming a gate structure and an active region on a semiconductor substrate; forming an interlayer dielectric film on the resultant semiconductor substrate; forming a plug in the interlayer dielectric film to electrically connect with the active region; forming a mold oxidation layer on the plug and the interlayer dielectric film; patterning the mold oxidation layer with a predetermined pattern and forming a lower electrode of material containing aluminum on the plug; and sequentially forming a dielectric layer and an upper electrode on the lower electrode.
According to a still further aspect of the present invention, there is provided a method of manufacturing a semiconductor device having a capacitor, the method including: forming a gate structure and a source and drain region on a semiconductor substrate; forming an interlayer dielectric film on the resultant semiconductor substrate; forming a plug in the interlayer dielectric film to electrically connect with the source and drain region; forming a diffusion prevention film of material containing aluminum on the plug; forming a mold oxidation layer on the diffusion prevention film and the interlayer dielectric film; patterning the mold oxidation layer with a predetermined pattern and then forming a lower electrode of material containing aluminum on the plug; and sequentially forming a dielectric layer and an upper electrode on the lower electrode.
The lower electrode may be formed of a material containing Titanium aluminum nitride (TiAlN) or tantalum aluminum nitride (TaAlN).
Further, if the lower electrode is formed of TiAlN or TaAlN, the upper electrode is formed of a material containing ruthenium (Ru) or titanium (Ti), or the dielectric layer is formed of a material containing LaOx or HfOx.
Furthermore, if the diffusion prevention film is formed of a material containing TiAlN or TaAlN, oxidation drawback is not caused even when the lower electrode is formed of a material containing Ru or Ti, or the dielectric layer comprises LaOx or HfOx, or the upper electrode is formed of a material containing Ru or TiN.
Additionally, the lower electrode and the diffusion prevention film are formed by flowing a mixture gas of a material, such as TiA4, and an aluminum ligand, such as trimethyl aluminum (Al[(CH3)3]), over the semiconductor substrate with the plug to form a TiAl layer while HA and CO2 emit out in gas form; and flowing NH3 over the TiAl layer to form a TiAlN layer while HA emits out in gas form.
According to the present invention, the lower electrode can be prevented from being oxidized when the dielecric film is formed, thereby preventing harmful effects caused by oxidation of the lower electrode.
BRIEF DESCRIPTION OF THE DRAWINGSThe above and other features and advantages of the present invention will become more apparent by describing in detail exemplary embodiments thereof with reference to the attached drawings in which:
The present invention will now be described more fully with reference to the accompanying drawings, in which exemplary embodiments of the invention are shown. The invention may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the invention to those skilled in the art. In the drawings, the thicknesses of layers and regions are exaggerated for clarity. It will also be understood that when a layer is referred to as being “on” another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may also be present.
Referring to
Further, a conductive plug 110 passes through the interlayer dielectric film 108 to electrically connect the lower electrode 122 with the source and drain region 104.
According to a preferred embodiment of the present invention, the conductive plug 110 uses a conductive material such as silicon. However, if other materials allow the electrical conduction between the lower electrode 122 and the source and drain region 104 that is formed in the semiconductor substrate 102, it does not matter that the conductive plug 110 can be formed of the other materials.
First, as shown in
Next, the interlayer dielectric film 108 is patterned using photolithography and etching to open the underlying source and drain region 104. Next, the opened source and drain region 104 are filled with an electrically conductive material to complete the conductive plug 110. The conductive plug 110 may be formed of silicon.
As shown in
As shown in
As shown in
After that, if NH3 gas flows on the TiAl layer, a TiAlN layer is formed while HA emits out in gas form. The above process is repeated to deposit the TiAlN layer at a desired thickness. Accordingly, the TiAlN layer is resultantly formed as a lower electrode layer 120 on the conductive plug 110 and the mold oxidation layer 116. According to a preferred embodiment of the present invention, the mold oxidation layer 116 is formed of SiO2 and a silicon oxide.
As shown in
As shown in
According to a preferred embodiment of the present invention, the dielectric layer 124 is formed of LaOx or HfOx, but can be also formed using material such as BST(Ba,Sr)TiO3 (barium strontium titanium oxide) and ZrOx.
Further, according to an embodiment of the present invention, the lower electrode 122 is formed of TiAlN with the oxidation resistance to be prevented from being oxidized even when a subsequential process is performed using oxygen as the reaction gas. Accordingly, it does not matter that the upper electrode 126 employs an oxidation induction material such as TiN or ruthenium (Ru).
Referring to
Here, a conductive plug 210 passes through the interlayer dielectric film 208 to electrically connect the low electrode 222 with the source and drain region 204.
The conductive plug 210 uses a conductive material such as silicon. However, if other materials allow the electrical conduction between the lower electrode 222 and the source and drain region 204 that is formed in the semiconductor substrate 202, it does not matter that the conductive plug 210 can be formed of the other materials.
Further, a second diffusion prevention film 214 is formed of TiAlN or TaAlN between the lower electrode 222 and a first diffusion prevention film 213 that is formed on the conductive plug 210, so as to suppress a mutual diffusion or a chemical reaction occurring between the lower electrode 222 and the first diffusion prevention film 213 that is formed on the conductive plug 210.
Further, a conventional TiN layer for preventing oxidation and diffusion can be replaced with and formed of TiAlN through a process of forming the lower electrode 222 over the conductive plug 210 according to a preferred embodiment of the present invention. Accordingly, even though the lower electrode 222 is formed of a precious metal-based material, which can be easily oxidized, such as ruthenium (Ru) and iridium (Ir), the lower electrode 222 can be prevented from being oxidized in the subsequential process.
In another aspect of the present invention, TaAlN or an aluminum-doped metal instead of TiAlN can be used as the lower electrodes 122 and 222 and the second diffusion prevention film 214 as long as it prevents oxidation in the subsequential process.
First, as shown in
Next, the interlayer dielectric film 208 is patterned using photolithography and etching to open the source and drain region 204. After that, an electrically conductive material is formed on the opened source and drain region 204 to complete the conductive plug 210. At this time, the conductive plug 210 may be formed of silicon. And then, the first diffusion prevention film 213 is formed of TiN on the conductive plug 210.
Next, as shown in
And then, as shown in
After that, a second diffusion prevention film 214 is formed of TiAlN on the exposed first diffusion prevention film 213 and the insulating film 212 as in detail described in the following.
First, if a mixture gas of a material such as TiA4 and aluminum ligand such as trimethyl aluminum (Al[CH3]3) flows on the semiconductor substrate 202 including the first diffusion prevention film 213, a TiAl layer is formed while HA and CO2 emit out in gas form. Here, “A” denotes halogen such as fluorine (F), chlorine (Cl), iodine (I) or bromine (Br).
After that, if NH3 gas flows on the TiAl layer, a TiAlN layer is completed as the second diffusion prevention film 214 with HA emitting out in the form of gas. Accordingly, the second diffusion prevention film 214 is resultantly formed of TiAlN on the first diffusion prevention film 213.
Further, a conventional TiN layer for preventing oxidation and diffusion can be replaced with and formed of TiAlN through a process of forming the second diffusion prevention film 214 according to a preferred embodiment of the present invention. Accordingly, even though the lower electrode 222 is formed of a material, which can be easily oxidized, such as ruthenium (Ru) and TiN, the lower electrode 222 can be prevented from being oxidized in the subsequential process.
In another aspect of the present invention, TiAlN can be replaced with TaAlN or an aluminum-doped metal as the second diffusion prevention film 214 as long as it prevents oxidation in the subsequential process.
Next, as shown in
As shown in
Next, as shown in
First, a halogen-based material such as iodine is absorbed on a surface of the mold oxidation layer 216 with the contact hole 218. And then, the halogen-based material reacts with a ruthenium (Ru) precursor, which is used in Atomic Layer Deposition (ALD), to induce the decomposition of the ruthenium precursor.
Next, the ruthenium precursor is absorbed on the iodine-absorbed surface of the mold oxidation layer 216 having the contact hole 218. At this time, the absorbed iodine of the mold oxidation layer 216 reacts with the ruthenium precursor to decompose ruthenium from ligand of the ruthenium precursor. After remaining ruthenium precursor is purged, oxygen gas is absorbed on the remaining ruthenium precursor. The oxygen gas reacts with the ligand of the ruthenium precursor to decompose ruthenium from the ruthenium precursor, and the decomposed ruthenium reacts with oxygen to form a ruthenium oxide, thereby forming the lower electrode layer 220.
The forming of the lower electrode layer 220 using ruthenium is in detail described as above, but it does not matter that the lower electrode layer 220 is formed of TiN, or TiAlN that is used when the second diffusion prevention film 214 is formed.
After that, as shown in
Next, as shown in
The second diffusion prevention film 214 is formed of an oxidation resistance material for preventing oxidation such as TiAlN or TaAlN, on the first diffusion prevention film 213 that is formed on the conductive plug 210. Accordingly, the lower electrode or the oxidation prevention film can be prevented from being oxidized even when the lower electrode and the upper electrode are formed of TiN or ruthenium in the subsequential process using the reaction gas containing oxygen.
As shown in
As described above, the present invention has an effect in that the lower electrode and the diffusion prevention film are formed of the aluminium-doped metal such that the lower electrode and the diffusion prevention film are not oxidized even in the subsequential process using atmosphere containing oxygen.
Also, the present invention has an effect in that current leakage is improved by using the TiAlN layer as the lower electrode to prevent oxidation.
Further, the present invention has an effect in that the upper electrode can be formed of TiN or Ru with a large work function in the subsequential process by forming the lower electrode and/or the diffusion prevention film of the aluminium-doped metal.
While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the present invention as defined by the following claims.
Claims
1-15. (canceled)
16. A method of manufacturing a semiconductor device having a capacitor, the method comprising:
- forming a gate structure and an active region on a semiconductor substrate;
- forming an interlayer dielectric film on the resultant semiconductor substrate;
- forming a plug in the interlayer dielectric film to electrically connect with the active region;
- forming a mold oxidation layer on the plug and the interlayer dielectric film;
- patterning the mold oxidation layer with a predetermined pattern, and then forming a lower electrode of material containing aluminum on the plug; and
- sequentially forming a dielectric layer and an upper electrode on the lower electrode.
17. The method of claim 16, wherein the lower electrode containing aluminum is formed of a material containing TaAlN.
18. The method of claim 16, wherein the lower electrode containing aluminum is formed of a material containing TiAlN.
19. The method of claim 18, wherein the forming of the lower electrode comprises:
- flowing a mixture gas of material TiA4 and aluminum ligand, trimethyl aluminum (Al[(CH3)3]), on the semiconductor substrate with the plug to form a TiAl layer while HA and CO2 emit out in gas form; and
- flowing NH3 over the TiAl layer to form a TiAlN layer while HA emits out in gas form,
- where “A” is a halogen element selected from the group consisting of fluorine (F), chorine (Cl), iodine (I) and bromine (Br).
20. The method of claim 16, wherein the dielectric layer comprises LaOx or HfOx, where x is between 0 and 3.
21. The method of claim 16, wherein the plug is formed of a material containing silicon (Si).
22. The method of claim 16, wherein the mold oxidation layer is SiO2.
23. A method of manufacturing a semiconductor device having a capacitor, the method comprising:
- forming a gate structure and a source and drain region on a semiconductor substrate;
- forming an interlayer dielectric film on the resultant semiconductor substrate;
- forming a plug in the interlayer dielectric film to electrically connect with the source and drain region;
- forming a diffusion prevention film of material containing aluminum on the plug;
- forming a mold oxidation layer on the diffusion prevention film and the interlayer dielectric film;
- patterning the mold oxidation layer with a predetermined pattern and forming a lower electrode on the plug; and
- sequentially forming a dielectric layer and an upper electrode on the lower electrode.
24. The method of claim 23, wherein the diffusion prevention film containing aluminum is formed of a material containing TaAlN.
25. The method of claim 23, wherein the diffusion prevention film containing aluminum is formed of a material containing TiAlN.
26. The method of claim 25, wherein the forming of the diffusion prevention film comprises:
- flowing a mixture gas of material TiA4 and aluminum ligand, trimethyl aluminum (Al[(CH3)3]) on the semiconductor substrate with the plug to form a TiAl layer while HA and CO2 emit out in gas form; and
- flowing NH3 over the TiAl layer to form a TiAlN layer while HA emits out in gas form, where “A” is a halogen element selected from the group consisting of fluorine (F), chorine (Cl), iodine (I), and bromine (Br).
27. The method of claim 23, wherein the dielectric layer comprises LaOx or HfOx where x is between 0 and 3.
28. The method of claim 23, wherein the upper electrode is formed of a material containing Ru or TiN.
29. The method of claim 23, wherein the mold oxidation layer comprises SiO2.
Type: Application
Filed: Sep 29, 2006
Publication Date: Feb 1, 2007
Applicant: Samsung Electronics Co., Ltd. (Suwon-si)
Inventors: Hion-suck Baik (Cheonan-si), Jung-hyun Lee (Yongin-si), Jong-bong Park (Osan-si), Yun-chang Park (Suwon-si)
Application Number: 11/529,611
International Classification: H01L 29/94 (20060101); H01L 27/108 (20060101); H01L 29/00 (20060101);