Abstract: Metal insulator metal capacitors are described. In an example, a capacitor includes a first electrode plate, and a first capacitor dielectric on the first electrode plate. A second electrode plate is on the first capacitor dielectric and is over and parallel with the first electrode plate, and a second capacitor dielectric is on the second electrode plate. A third electrode plate is on the second capacitor dielectric and is over and parallel with the second electrode plate, and a third capacitor dielectric is on the third electrode plate. A fourth electrode plate is on the third capacitor dielectric and is over and parallel with the third electrode plate. In another example, a capacitor includes a first electrode, a capacitor dielectric on the first electrode, and a second electrode on the capacitor dielectric. The capacitor dielectric includes a plurality of alternating first dielectric layers and second dielectric layers.

Abstract: Disclosed herein is a chemical sensing system, comprising: a sensor configured to adsorb an analyte; an electronic circuit to operate the sensor; and a microcontroller in communication with the sensor and the electronic circuit. The microcontroller can also be configured to provide a real-time signal indicative of a concentration of the analyte. The sensor can comprise a microelectromechanical system (MEMS) resonator and a sensing film configured to adsorb the analyte, the sensing film coating at least a portion of the sensor. The MEMS resonator can comprise a second sensor, such as an impedimetric sensor to measure at least a second property of the sensing film. The electronic circuit can process signals stemming from at least two properties of the same sensing film, such as the changes in mass and dielectric constant of the same sensing film due to adsorption of analyte.

Abstract: A chip card body including a metal plate having at least one slot which defines a current flow path on the metal plate, and having a coupling region to accommodate a chip with an antenna, wherein the coupling region is configured to inductively couple the metal plate to the antenna of the chip, a dielectric layer applied to the metal plate, an electrically conductive layer applied to a side of the dielectric layer opposite the metal plate, and at least one electrically conductive coupling between the metal plate and the electrically conductive layer, wherein the metal plate, the dielectric layer and the electrically conductive layer form a capacitor.

Abstract: According to an embodiment, a time of flight sensor device includes: a semiconductor substrate having a conversion region to convert an electromagnetic signal into photo-generated charge carriers, and including a substrate doping region having a n-doping type. The substrate doping region extends from a first main surface region of the semiconductor substrate into the semiconductor substrate. The semiconductor substrate has a p doped region adjacent to the substrate doping region. The substrate doping region at least partially forms the conversion region in the semiconductor substrate. A readout node arranged in the semiconductor substrate within the substrate doping region and having the n-doping type is configured to readout the photo generated charge carriers. A control electrode is arranged in the substrate doping region of the semiconductor substrate and in the substrate doping region and has a p-doping type.

Abstract: The present invention provides a method for manufacturing a high frequency capacitor, including preparing a substrate for formation of the capacitor, forming a dielectric layer at an upper surface of the substrate, forming an upper electrode at an upper surface of the dielectric layer, and removing a portion of a lower surface of the substrate, to expose a lower surface of the dielectric layer, and forming a lower electrode at the lower surface of the dielectric layer. The high frequency capacitor includes a dielectric layer having a uniform surface, a thick upper electrode, and a thick lower electrode and, as such, exhibits high quality factor (Q) even at a high frequency.

Abstract: A semiconductor structure includes a substrate, at least one dielectric layer and a capacitor structure. The at least one dielectric layer is disposed over the substrate, and the at least one dielectric layer includes a step edge profile. The capacitor structure is disposed over the substrate. The capacitor structure includes a bottom electrode, a capacitor dielectric layer and a top electrode. The bottom electrode covers the step edge profile of the at least one dielectric layer and has a first step profile substantially conformal to the step edge profile of the at least one dielectric layer. The capacitor dielectric layer covers the bottom electrode and has a second step profile substantially conformal to the first step profile. The top electrode covers the capacitor dielectric layer.

Abstract: A capacitor structure and a method of preparing the same are provided. The method includes the followings. A substrate is provided. A stacked layer is formed on the substrate. A plurality of first via holes penetrating through the stacked layer are formed. The first via hole is filled with a conductive material to form a conductive pillar. A plurality of second via holes penetrating through the stacked layer are formed at a preset radius with the conductive pillar as an axis. The second via hole surrounds the conductive pillar circumferentially. The second via hole is filled with the conductive material to form an annular top electrode with a second gear.

Abstract: The present disclosure, in some embodiments, relates to a method of forming a capacitor structure. The method includes forming a capacitor dielectric layer over a lower electrode layer, and forming an upper electrode layer over the capacitor dielectric layer. The upper electrode layer is etched to define an upper electrode and to expose a part of the capacitor dielectric layer. A spacer structure is formed over horizontally extending surfaces of the upper electrode layer and the capacitor dielectric layer and also along sidewalls of the upper electrode. The spacer structure is etched to remove the spacer structure from over the horizontally extending surfaces of the upper electrode layer and the capacitor dielectric layer and to define a spacer. The capacitor dielectric layer and the lower electrode layer are etched according to the spacer to define a capacitor dielectric and a lower electrode.

Abstract: In an embodiment, a semiconductor device is provided that includes a lateral transistor device having a source, a drain and a gate, and a monolithically integrated capacitor coupled between the gate and the drain.

Abstract: A capacitive logic cell with complementary control, including a variable-capacitance electromechanical device having a fixed part and a mobile part, the electromechanical device comprising first, second, third and fourth electrodes mounted on the fixed part, and a fifth electrode mounted on the mobile part, the first electrode being connected to a terminal for supplying a first input logic signal, the second electrode being connected to a terminal for supplying a second input logic signal, complementary to the first input logic signal, the third electrode being connected to a terminal for supplying a first output logic signal, and the fourth electrode being connected to a terminal for supplying a second output logic signal, complementary to the first output logic signal.

Abstract: A plurality of capacitors and a holding body constructed to hold the plurality of capacitors. Each of the plurality of capacitors includes a semiconductor substrate, a first electrode layer, a dielectric layer, a second electrode layer, and an outer electrode. Among a first capacitor and a second capacitor of the plurality of capacitors, the second capacitor has a shape different from a shape of the first capacitor in at least one of the first electrode layer, the second electrode layer, and the outer electrode.

Abstract: Time-of-flight (TOF) systems and techniques whereby a first exposure obtains pixel measurements for a first subset of pixels of a pixel array, using a first reference signal. For a second exposure, the first subset of the pixels, e.g., every second line of the pixel array, are set to a “hold” state, so that values obtained from the first measurement are maintained. A second exposure using a second reference signal is performed for a second subset of the pixels. The first and second reference signals may have different phase shifts relative to a signal modulating an optical signal being measured. The result is an array of pixels in which the first and second subsets hold results of the first and second exposures, respectively. These pixel values can then be read out all at once, with certain calculations being performed directly as pixel values are read from the pixel array.

Abstract: A 2nd signal line has impedance lower than impedance of a 1st signal line. A capacitor includes a 1st extension part and a 2nd extension part, a 1st ground part and a 2nd ground part. The 1st extension part and the 2nd extension part are connected to a 2nd signal line and are on an insulation substrate to extend along a longitudinal direction of the 2nd signal line. The 1st ground part and the 2nd ground part are at least a part of a ground pattern, and are between the 1st extension part and the 2nd extension part and the 2nd signal line, and between the 1st extension part and the 2nd extension part and an end part of the insulation substrate, to be electrically coupled with the 1st extension part and the 2nd extension part.

Abstract: A capacitor includes at least one multi-wing structure; a laminated structure, where the laminated structure clads the at least one multi-wing structure and includes at least one dielectric layer and a plurality of conductive layers, and the at least one dielectric layer and the plurality of conductive layers form a structure that a conductive layer and a dielectric layer are adjacent to each other; at least one first external electrode, where the first external electrode is electrically connected to some conductive layer(s) in the plurality of conductive layers; at least one second external electrode, wherein the second external electrode is electrically connected to the other conductive layer(s) in the plurality of conductive layers, and a conductive layer in the laminated structure adjacent to each conductive layer in the some conductive layer(s) includes at least one conductive layer in the other conductive layer(s).

Abstract: A capacitor includes: at least one multi-wing structure including N axes and M wings, where the N axes extend along a first direction, and the M wings are a convex structure formed by extending from side walls of the N axes toward a direction perpendicular to the first direction, a first wing of the M wings and the N axes are formed of a first conductive material, and other wings are formed of a second conductive material; a conductive structure cladding the multi-wing structure; a dielectric layer disposed between the multi-wing structure and the conductive structure to isolate the multi-wing structure from the conductive structure; a first external electrode electrically connected to some or all multi-wing structures; and a second external electrode electrically connected to the conductive structure.

Abstract: The composite chip component includes: plurality of chip elements which are disposed so as to be mutually spaced apart upon a common substrate, and which have mutually different functions; and a pair of electrodes which, in each of the chip elements, are formed on the surface of the substrate. As a result, it is possible to reduce the bond area (footprint) for the mounting substrate, and therefore, it is possible to provide a composite chip component capable of achieving efficiency of mounting operation.

Abstract: Capacitor structures with pitch-matched capacitor unit cells are described. In an embodiment, the capacitor unit cells are formed by interdigitated finger electrodes. The finger electrodes may be pitch-matched in multiple metal layers within a capacitor unit cell, and the finger electrodes may be pitch-matched among an array of capacitor unit cells. Additionally, border unit cells may be pitch-matched with the capacitor unit cells.

Abstract: The composite chip component includes: plurality of chip elements which are disposed so as to be mutually spaced apart upon a common substrate, and which have mutually different functions; and a pair of electrodes which, in each of the chip elements, are formed on the surface of the substrate. As a result, it is possible to reduce the bond area (footprint) for the mounting substrate, and therefore, it is possible to provide a composite chip component capable of achieving efficiency of mounting operation.

Abstract: Systems and methods for simultaneous sampling of serial digital data streams from multiple analog-to-digital converters (ADCs), including in distributed antenna systems, are disclosed. In one embodiment, a controller unit samples a plurality of serial digital data streams simultaneously. To allow the controller unit to sample the multiple serial digital data streams simultaneously from a plurality of ADCs, the controller unit is configured to provide a plurality of data input ports. Each of the ADCs is coupled to a common chip select port and clock signal port on the controller unit. The controller unit communicates a chip select signal on the chip select port to activate all of the ADCs simultaneously to cause each of the ADCs to provide its respective digital data stream to the respective data input port of the controller unit simultaneously for sampling. As a result, fewer or lower-cost components may be used to sample multiple ADCs.

Abstract: A semiconductor device is made with a conductive via formed through a top-side of the substrate. The conductive via extends vertically through less than a thickness of the substrate. An integrated passive device (IPD) is formed over the substrate. A plurality of first conductive pillars is formed over the first IPD. A first semiconductor die is mounted over the substrate. An encapsulant is formed around the first conductive pillars and first semiconductor die. A second IPD is formed over the encapsulant. An interconnect structure is formed over the second IPD. The interconnect structure operates as a heat sink. A portion of a back-side of the substrate is removed to expose the first conductive via. A second semiconductor die is mounted to the back-side of the substrate. The second semiconductor die is electrically connected to the first IPD and first semiconductor die through the conductive via.

Abstract: A semiconductor integrated circuit device may include a cell capacitor connected with any one of a first electrode and a second electrode of an access device. The cell capacitor may include a first cell cap array and a second cell cap array separated from the first cell cap array. A voltage terminal for driving the cell capacitor may be connected to a connection node between the first cell cap array and the second cell cap array.

Abstract: Systems and methods for simultaneous sampling of serial digital data streams from multiple analog-to-digital converters (ADCs), including in distributed antenna systems, are disclosed. In one embodiment, a controller unit samples a plurality of serial digital data streams simultaneously. To allow the controller unit to sample the multiple serial digital data streams simultaneously from a plurality of ADCs, the controller unit is configured to provide a plurality of data input ports. Each of the ADCs is coupled to a common chip select port and clock signal port on the controller unit. The controller unit communicates a chip select signal on the chip select port to activate all of the ADCs simultaneously to cause each of the ADCs to provide its respective digital data stream to the respective data input port of the controller unit simultaneously for sampling. As a result, fewer or lower-cost components may be used to sample multiple ADCs.

Abstract: A semiconductor device comprising a semiconductor substrate and a composite capacitor structure on the semiconductor substrate, wherein the composite capacitor structure comprises a capacitor stack comprising a lower and an upper capacitor, respectively comprising first and second dielectric materials, wherein the first and second dielectric materials are different materials and/or have different thicknesses from each other. This can minimize the voltage dependence of the capacitance of the composite capacitor structure. It is also possible to provide a composite capacitor structure on the semiconductor substrate, wherein the composite capacitor structure comprises at least a first and a second capacitor stack, each comprising a lower and an upper capacitor. The capacitors can be MIM capacitors.

Abstract: A variable capacitance device includes a substrate, a beam portion, lower drive electrodes and upper drive electrodes. The beam portion is made of an insulating material and is connected to the substrate via an anchor portion. In the lower drive electrode and the upper drive electrode, electrostatic attraction generated by the application of a DC voltage continuously changes. In the lower drive electrodes and the upper drive electrode, electrostatic capacitance generated by the application of an RF signal between the electrodes on both sides continuously changes in accordance with the deformation of the beam portion due to the electrostatic attraction. The beam portion includes an inner circumferential portion including the upper drive electrode, an outer circumferential portion including the upper drive electrode, and ladder portions sandwiched by the inner circumferential portion and the outer circumferential portion. The beam portion has a cross-sectional area that is reduced by the ladder portions.

Abstract: Provided is a readout integrated circuit including a sensor signal processing unit receiving sensor signals from a plurality of sensors and converting respectively the sensor signals into voltage signals, a signal converting unit respectively converting the voltage signals into digital signals, a digital signal processing unit outputting digital signals processed in response to the voltage signals and a switching control signal, a power supplying unit generating an internal voltage for operating the signal converting unit and the digital signal processing unit, and a reference sensing voltage for operating the sensor signal processing unit, and a switch unit operating in response to the switching control signal, wherein the switch unit includes switches respectively corresponding to the plurality of sensors and a current amount applied to each sensor is adjusted in response to operation times of the switches.

Abstract: Systems and methods for simultaneous sampling of serial digital data streams from multiple analog-to-digital converters (ADCs), including in distributed antenna systems, are disclosed. In one embodiment, a controller unit samples a plurality of serial digital data streams simultaneously. To allow the controller unit to sample the multiple serial digital data streams simultaneously from a plurality of ADCs, the controller unit is configured to provide a plurality of data input ports. Each of the ADCs is coupled to a common chip select port and clock signal port on the controller unit. The controller unit communicates a chip select signal on the chip select port to activate all of the ADCs simultaneously to cause each of the ADCs to provide its respective digital data stream to the respective data input port of the controller unit simultaneously for sampling. As a result, fewer or lower-cost components may be used to sample multiple ADCs.

Abstract: A method for fabricating a capacitor includes forming a mold structure over a substrate, wherein the mold structure has a plurality of open parts and has a mold layer stacked with a support layer; forming cylinder type lower electrodes in the open parts; forming a first upper electrode over an entire surface of a structure including the cylinder type lower electrodes to fill the cylinder type lower electrodes; defining a through hole that passes through portions of the first upper electrode and the support layer; removing the mold layer through the through hole and exposing the cylinder type lower electrodes; forming a second upper electrode to fill the through hole and spaces between the cylinder type lower electrodes; and forming a third upper electrode to connect the second upper electrode and the first upper electrode with each other.

Abstract: According to one embodiment, a semiconductor device includes a semiconductor chip which includes a semiconductor integrated circuit provided in an insulator, a first pad a pad having an upper surface of which is exposed via an opening formed in the insulator, and capacitors provided in a capacitor region of the semiconductor chip under the pad. The capacitors are provided in the capacitor region to satisfy a rule of a coverage. And contacts respectively connected to two electrodes of the capacitors are provided at positions that do not vertically overlap the opening.

Abstract: A device structure includes an inter-level dielectric, a via, a first conductive trench, and a second conductive trench. The inter-level dielectric has a top surface and a bottom surface. The via extends from the top surface to the bottom surface. The first conductive trench extends from the top surface to a first depth below the top surface. The second conductive trench extends from the top surface to a second depth below the top surface, wherein the second depth is above the bottom surface and below the first depth.

Abstract: A complementary back end of line (BEOL) capacitor (CBC) structure includes a metal oxide metal (MOM) capacitor structure. The MOM capacitor structure is coupled to a first upper interconnect layer of an interconnect stack of an integrated circuit (IC) device. The MOM capacitor structure includes at least one lower interconnect layer of the interconnect stack. The CBC structure may also include a second upper interconnect layer of the interconnect stack coupled to the MOM capacitor structure. The CBC structure also includes at least one metal insulator metal (MIM) capacitor layer between the first upper interconnect layer and the second upper interconnect layer. In addition, CBC structure may also include a MIM capacitor structure coupled to the MOM capacitor structure. The MIM capacitor structure includes a first capacitor plate having at least a portion of the first upper interconnect layer, and a second capacitor plate having at least a portion of the MIM capacitor layer(s).

Abstract: A vertical semiconductor charge storage structure includes a substrate, at least one lower electrode, a dielectric layer and an upper electrode. The lower electrode includes a lower conductor, and a first side conductor and a second side conductor connected to the lower conductor. The first side conductor and the second side conductor are parallel to each other and form an included angle with the lower conductor. A height of the first side conductor from the substrate is greater than a height of the second side conductor from the substrate. The dielectric layer and the upper electrode are sequentially formed on surfaces of the substrate and the lower electrode. Accordingly, by forming the first side conductor and the second side conductor at different heights, an aperture ratio is increased to reduce difficulty in filling or deposition in subsequent processes to further enhance an overall yield rate.

Abstract: A semiconductor device includes a substrate and a plurality of storage nodes on the substrate and extending in a vertical direction relative to the substrate. A lower support pattern is in contact with the storage nodes between a bottom and a top of the storage nodes, the lower support pattern spaced apart from the substrate in the vertical direction, and the lower support pattern having a first maximum thickness in the vertical direction. An upper support pattern is in contact with the storage nodes above the lower support pattern relative to the substrate, the upper support pattern spaced apart from the lower support pattern in the vertical direction, and the lower support pattern having a second maximum thickness in the vertical direction that is greater than the first maximum thickness of the lower support pattern.

Abstract: Provided are a method of manufacturing a capacitor capable of achieving a high dielectric constant property and a low leakage current, a capacitor, and a method of forming a dielectric film used in the capacitor. The capacitor is fabricated by forming a lower electrode layer on a substrate; forming a first TiO2 film having an interface control function on the lower electrode layer; forming a ZrO2-based film on the first TiO2 film; performing an annealing process for crystallizing ZrO2 in the ZrO2-based film, after forming the ZrO2-based film; forming a second TiO2 film which serves as a capacity film on the ZrO2-based film; and forming an upper electrode layer on the second TiO2 film.

Abstract: This semiconductor device according to the present invention includes a plurality of cylindrical lower electrodes aligned densely in a memory array region; a plate-like support which is contacted on the side surface of the cylindrical lower electrodes, and links to support the plurality of the cylindrical lower electrodes; a pore portion provided in the plate-like support; a dielectric film covering the entire surface of the cylindrical lower electrodes and the plate-like support in which the pore portion is formed; and an upper electrode formed on the surface of the dielectric film, wherein the boundary length of the part on the side surface of the cylindrical lower electrode which is exposed on the pore portion is shorter than the boundary length of the part on the side surface of the cylindrical lower electrode which is not exposed on the pore portion.

Abstract: Devices or systems that include a composite thermal capacitor disposed in thermal communication with a hot spot of the device, methods of dissipating thermal energy in a device or system, and the like, are provided herein. In particular, the device includes a composite thermal capacitor including a phase change material and a high thermal conductivity material in thermal communication with the phase change material. The high thermal conductivity material is also in thermal communication with an active regeneration cooling device. The heat from the composite thermal capacitor is dissipated by the active regeneration cooling device.

Abstract: A semiconductor device capable of high-speed operation. The semiconductor device includes a first transistor, a second transistor, and a capacitor. One of a source and a drain of the first transistor is supplied with a first signal. One of a source and a drain of the second transistor is supplied with a first potential. A gate of the second transistor is supplied with a second signal. A first electrode of the capacitor is electrically connected to the other of the source and the drain of the first transistor. A second electrode of the capacitor is electrically connected to the other of the source and the drain of the second transistor. In a first period, the first signal is low and the second signal is high. In a second period, the first signal is high and the second signal is either low or high.

Abstract: Disclosed are example bipolar transistors capable of reducing the area of a collector, reducing the distance between a base and a collector, and/or reducing the number of ion implantation processes. A bipolar transistor may includes a trench formed by etching a portion of a semiconductor substrate. A first collector may be formed on the inner wall of the trench. A second collector may be formed inside the semiconductor substrate in the inner wall of the trench. A first isolation film may be formed on the sidewall of the first collector. An intrinsic base may be connected to the third collector. An extrinsic base may be formed on the intrinsic base and inside the first isolation film. A second isolation film may be formed on the inner wall of the extrinsic base. An emitter may be formed by burying a conductive material inside the second isolation film.

Abstract: A capacitor device includes a substrate including a first well having a first conductivity type and a first voltage applied thereto and a second well having a second conductivity type and a second voltage applied thereto; and a gate electrode disposed on an upper portion of the first well or an upper portion of the second well in such a way that the gate electrode is insulated from the first well or the second well, wherein capacitances of the capacitor device include a first capacitance between the first well and the second well and a second capacitance between the first well or the second well and the gate electrode.

Abstract: A microfabricated capacitive chemical sensor can be used as an autonomous chemical sensor or as an analyte-sensitive chemical preconcentrator in a larger microanalytical system. The capacitive chemical sensor detects changes in sensing film dielectric properties, such as the dielectric constant, conductivity, or dimensionality. These changes result from the interaction of a target analyte with the sensing film. This capability provides a low-power, self-heating chemical sensor suitable for remote and unattended sensing applications. The capacitive chemical sensor also enables a smart, analyte-sensitive chemical preconcentrator. After sorption of the sample by the sensing film, the film can be rapidly heated to release the sample for further analysis. Therefore, the capacitive chemical sensor can optimize the sample collection time prior to release to enable the rapid and accurate analysis of analytes by a microanalytical system.

Abstract: There is provided a semiconductor device including a word line, a bit line, a power supply node, a memory element, and a capacitor. The memory element includes at least first and second regions that form a PN junction between the bit line and the power supply node, and a third region that forms a PN junction with the second region. The capacitor includes a first electrode provided independently from the second region of the memory element and electrically connected to the second region of the memory element, and a second electrode connected to the word line.

Abstract: A semiconductor capacitor with large area plates and a small footprint is formed on a semiconductor wafer by forming an opening in the wafer, depositing a first metal atoms through a first shadow mask that lies spaced apart from the wafer to form a first metal layer in the opening, a dielectric layer on the first metal layer, and a second metal atoms through a second shadow mask that lies spaced apart from the wafer to form a second metal layer on the dielectric layer.

Abstract: On-chip decoupling capacitors and methods for placing the same are disclosed in which designated spaces are created between the active circuits to insert designated capacitor cells. The designated capacitor cells may be placed in designated areas of the integrated circuit that are not simply spaces left empty by cell placement or frontier areas in or around the route, and the dimensions (e.g., height) of the designated capacitor cells may be selected to optimize (increase) capacitance efficiency. The capacitor cells may also be placed to target and reduce the interference between a digital core (aggressor) circuit and a victim analog circuit.

Abstract: Embodiments of the present disclosure include devices or systems that include a composite thermal capacitor disposed in thermal communication with a hot spot of the device, methods of dissipating thermal energy in a device or system, and the like.

Abstract: A method for manufacturing a TiN/Ta2O5/TiN capacitor, including the steps of forming a Ta2O5 layer on a TiN support by a plasma-enhanced atomic layer deposition method, or PEALD; and submitting the obtained structure to an N2O plasma for a duration sufficient to oxidize the Ta2O5 layer without oxidizing the TiN support.

Abstract: An objective is to provide a component-incorporated wiring substrate capable of solving a problem caused by an increase in length of wiring lines that connect a component and a capacitor. A component-incorporated wiring substrate 10 includes a core substrate 11, a first capacitor 301, a wiring laminate portion 31, and a second capacitor 101. An accommodation hole portion 90 of the core substrate 11 accommodates the first capacitor 101 therein, and a component-mounting region 20 is set on a surface 39 of the wiring laminate portion 31. The second capacitor 101 has electrode layers 102, 103 and a dielectric layer 104. The second capacitor 101 is embedded in the wiring laminate portion 31 in such a state that first main surfaces 105, 107 and second main surfaces 106, 108 are in parallel with the surface 39 of the wiring laminate portion 31, and is disposed between the first capacitor 301 and the component-mounting region 20.

Abstract: A pin capacitor of a semiconductor device includes a first isolation layer formed in a substrate and defining a dummy active area, a plurality of gates formed over the first isolation layer, a spacer formed at both sidewalls of each of the gates, and a plug formed over the dummy active area and in contact with the spacer. The substrate and the plug are coupled to a ground unit, and the gate is coupled to a pad unit. That is, the pin capacitor includes a first capacitor including the gate, the isolation layer, and the substrate and a second capacitor including the gate, the spacer, and the plug, which are coupled in parallel to each other.

Abstract: Some embodiments relate a capacitor array arranged on a semiconductor substrate. The capacitor array includes an array of unit capacitors arranged in a series of rows and columns. An interconnect structure couples unit capacitors of the array to establish a plurality of capacitor elements. The respective capacitor elements have different numbers of unit capacitors and different corresponding capacitances. In establishing the plurality of capacitor elements, the interconnect structure couples unit capacitors of the array in substantially identical sub-arrays tiled over the semiconductor substrate. Other methods and devices are also disclosed.

Abstract: A plurality of metal patterns are disposed on a substrate. A support structure is provided between the plurality of metal patterns. The support structure has a supporter and a glue layer. Each of the plurality of metal patterns has a greater vertical length than a horizontal length on the substrate when viewed from a cross-sectional view. The supporter has a band gap energy of at least 4.5 eV. The glue layer is in contact with the plurality of metal patterns. The supporter and the glue layer are formed of different materials.

Abstract: A method for fabricating an electronic device package having a column grid array is disclosed. A column grid array package includes a substrate, an integrated circuit located on a first side of the substrate, and a set of solder columns located on a second side of the substrate. The column grid array package also includes multiple two-tab electronic devices located on the second side of the substrate. The heights of the two-tab electronic devices are substantially identical to the heights of the solder columns.

Abstract: A semiconductor device manufacturing method includes forming a first capacitance film formed on the lower electrode; forming an intermediate electrode in a first region on the first capacitance film, wherein the first capacitance is interposed between the intermediate electrode and the lower electrode; forming a second capacitance film on the intermediate electrode to be interposed between the first capacitance film and the second capacitance film; and forming an upper electrode, wherein at least a portion of the second capacitance film is interposed between the upper electrode and the intermediate electrode; the upper electrode extending to a second region outside the first region, and having at least the first capacitance film interposed between the upper electrode and the lower electrode in the second region.