HIGH WRITE SELECTIVITY AND LOW POWER MAGNETIC RANDOM ACCESS MEMORY AND METHOD FOR FABRICATING THE SAME
A low-power magnetic random access memory (MRAM) with high write selectivity is provided. Write word lines and pillar write word lines covered with a magnetic material are disposed in an zigzag relation, solving the magnetic interference problem generated by cells adjacent to the pillar write word line in the magnetic RAM with the pillar write word line form. According to the disclosed structure, each of the cells has a smaller bit size and a lower write current. This effectively reduces the power consumption of the MRAM.
This application is a Divisional of co-pending application Ser. No. 10/846,663 filed on May 14, 2004, and for which priority is claimed under 35 U.S.C. §120; and this application claims priority of Application No. 92136353 filed in Taiwan on Dec. 19, 2003 under 35 U.S.C. §119; the entire contents of all are hereby incorporated by reference.
BACKGROUND OF THE INVENTION1. Field of Invention
The invention relates to a magnetic random access memory (MRAM) and, in particular, to an MRAM with high write selectivity and low power consumption.
2. Related Art
Magnetic random access memory (MRAM) is nonvolatile memory. Using its magnetic resistance property to record information, it has the advantages of non-volatility, high densities, high access speeds, and anti-radiation.
The basic operation principles of the MRAM are the same as storing data on a hard disk drive (HDD). Each bit of data is determined by its magnetization orientation to be either 0 or 1. The stored data are permanent until being modified by an external magnetic field.
When data is read from the MRAM, an electrical current has to flow to a selected magnetic tunnel junction (MTJ) cell. The resistance value determines the numerical value of the data. When writing in data, a common method uses two wires (a bit line and a write word line) to induce a magnetic field at the selected cell, thereby changing the magnetization orientation of the magnetic material at the position and the data thereof.
The MTJ cell between the bit line and the write word line has a stack structure of multi-layer magnetic metal materials. The structure basically contains a soft magnetic layer, a nonmagnetic conductor or tunnel barrier, and a hard magnetic layer. Whether the magnetization orientations of the two layers of ferromagnetic materials are parallel or anti-parallel determines whether the stored datum is 1 or 0.
As memory devices are becoming smaller, the MRAM starts to encounter the electron migration problem because the write-in electrical current needed to change data approaches the current density limit that can be carried by a metal wire. To solve the problem, the U.S. Pat. No. 6,642,595 discloses a memory structure. As shown in
Nonetheless, this structure has a problem. If the PWWL's point in the normal direction, they will produce a negative contribution to the magnetic field on the adjacent MTJ, enlarging the device size. Moreover, to avoid the interference of the write word line on MTJ's that are not selected, a better design for increasing the MRAM write selectivity is to let the magnetic field produced by the write word line pass through as few MTJ's as possible.
SUMMARY OF THE INVENTIONIn view of the foregoing, a primary objective of the invention is to provide a magnetic random access memory (MRAM) with high write selectivity and low power consumption. The invention reduces the write current required by the MRAM, thereby reducing the power consumption during the write period thereof.
The disclosed structure can eliminate the magnetic interference problem of the write word lines on adjacent MTJ's. This increases the write selectivity of the MRAM.
To achieve the above-mentioned objective, the disclosed MRAM has a plurality of MTJ cells, a plurality of bit lines, a plurality of middle metal pillars, and a plurality of PWWL's. Each MTJ cell is comprised of a magnetic tunnel junction cell and a lower electrode. Changing the magnetization orientation of the magnetic tunnel junction cell determines the memory state. Each bit line provides the read and write current channels for the corresponding MTJ cell. Each middle metal pillar connects the MTJ cell and the bit line. Each write word line is comprised of an upper layer write word line, a lower layer write word line and a pair of PWWL's, providing the write current channel for the MTJ cell. This increases the induced magnetic field at the MTJ cell. The PWWL's of the adjacent MTJ cells are disposed in an interleaving fashion (zigzag pattern as shown in the
The invention has to add a photo mask process after the PWWL process. Furthermore, the disclosed sidewall keeper structure confines the magnetic flux on the MTJ so that adjacent MTJ's are not affected by the magnetic field produced by the PWWL's. The write selectivity of the MRAM is thus greatly increased.
BRIEF DESCRIPTION OF THE DRAWINGSThe invention will become more filly understood from the detailed description given hereinbelow illustration only, and thus are not limitative of the present invention, and wherein:
To reduce negative interference of adjacent PWWL's on a MTJ, the invention employs the photo mask to arrange a PWWL and its PWWL's of write word lines with the same electrical currents flow in an interleaving fashion.
The layout in the prior art is to arrange the magnetic memory cells next to one another. However, such a layout will result in interference of adjacent PWWL's on a MTJ. With reference to
With further reference to
Generally speaking, the PWWL covered with a sidewall keeper can increase the induced magnetic field to two times that of uncovered ones, while the write current can be roughly reduced by a factor of two.
In the following, we describe the manufacturing process of the MRAM disclosed in the invention. After forming the lower electrode and the MTJ's, there is a step of forming a via as the PWWL and the middle metal pillar. It is normally performed using single-time photolithography alignment, etching, copper plating, and chemical mechanical polishing (CMP).
Afterwards, a new photo mask, as shown in
The next step is to fill a material with high permeability, generally a permally or Ferri magnet. Its top surface is removed by etching back or CMP. Finally, an upper electrode is formed on the MRAM to be the bit line.
The sidewall keeper structure effectively converge the magnetic flux generated by the PWWL's on a specific MTJ. A simulation result is shown in
The disclosed MRAM adopts zigzag write word lines so that it has a smaller bit size and a lower write current. This can resolve the magnetic interference problem of adjacent PWWL's on a MTJ.
Moreover, the disclosed vertical sidewall keeper can prevent magnetic interference of a PWWL on its adjacent MTJ. Therefore, the adjacent MTJ's will not incorrectly change their memory states. The write selectivity of the MRAM is thus enhanced. Using the structure, the write current of the MRAM with PWWL's can be lowered to about one-fourth of that in the prior art, consequently reducing the power consumption of the MRAM.
Certain variations would be apparent to those skilled in the art, which variations are considered within the spirit and scope of the claimed invention.
Claims
1. A magnetic random access memory (MRAM) with high write selectivity and low power consumption, comprising:
- a plurality of magnetic memory cells, each of the magnetic memory cells having a magnetic tunnel junction cell and a lower electrode, the memory state of the magnetic memory cells being determined by the magnetization orientation of the magnetic tunnel junction cell;
- a plurality of bit lines, each of the bit lines providing a channel for the read and write currents of the corresponding magnetic memory cell;
- a plurality of middle metal pillars, each of the middle metal pillars connecting to the corresponding magnetic memory cell and the corresponding bit line;
- a plurality of write word lines, each of the write word lines having an upper layer write word line and a lower layer write word line; and
- a plurality of pillar write word lines, each of the pillar write word lines connecting the associated upper layer write word line and lower layer write word line for providing a write current channel for the corresponding magnetic memory cell, thereby enhancing the induced magnetic field at the corresponding magnetic memory cell, wherein the pillar write word lines of the adjacent magnetic memory cells are disposed in an zigzag relation.
2. The MRAM of claim 1, wherein the pillar write word lines is covered with a sidewall keeper except for the part facing the magnetic tunnel junction cell.
3. The MRAM of claim 2, wherein the sidewall keeper is made of a magnetic material with high permeability.
4. The MRAM of claim 3, wherein the magnetic material is one selected from the group consisting of the permalloy and the Ferri magnet.
5. A method for making a magnetic random access memory (MRAM) with high write selectivity and low power consumption, after forming the MTJ cell of the MRAM, the method further comprising steps of:
- forming two pillar write word lines on both sides of the magnetic memory cell and a middle metal pillar;
- forming a sidewall keeper on the pillar write word line except for the part facing the magnetic memory cell; and
- forming a bit line of the MRAM.
6. The method of claim 5, wherein the sidewall keeper is made of magnetic material with high permeability.
7. The method of claim 6, wherein the magnetic material is one selected from the group consisting of the permalloy and the Ferri magnet.
8. The method of claim 5, wherein the step of forming the middle metal pillar and the pillar write word lines is accomplished using the processes of lithography alignment, etching, filling, and chemical mechanical polishing (CMP) sequentially.
9. The method of claim 5, wherein the step of forming the sidewall keeper is accomplished using the processes of lithography alignments etching, filling a magnetic material, and etching back sequentially.
10. A magnetic random access memory (MRAM) comprising:
- a plurality of magnetic memory cells, each of the magnetic memory cells having a magnetic tunnel junction cell and a lower electrode and whose memory state is determined by changing its magnetization orientation;
- a plurality of bit lines, each of the bit lines providing a read/write current channel for a corresponding magnetic memory cell;
- a plurality of middle metal pillars, each of the middle metal pillars connecting the associated magnetic memory cell and bit line;
- a plurality of write word lines, having an upper layer write word line and a lower layer write word line; and
- a plurality of pillar write word lines, each of the pillar write word lines connecting the upper layer write word line and the lower layer write word line for providing the write current channel for the magnetic memory cell, thereby enhancing the induced magnetic field at the magnetic memory cell, the pillar write word lines of the adjacent memory units disposed in an zigzag relation.
11. The MRAM of claim 10, wherein each of the pillar write word lines is covered by a sidewall keeper except for the part facing the magnetic tunnel junction cell.
12. The MRAM of claim 11, wherein the sidewall keeper is made of magnetic material with high permeability.
13. The MRAM of claim 12, wherein the magnetic material is one selected from the group consisting of the permalloy and the Ferri magnet.
14. The MRAM of claim 1, wherein each of the pillar write word lines extends in a vertical direction, an upper end of each of the pillar write word lines being inn contact with a corresponding upper layer write word line, a lower end of each of the pillar write word lines being in contact with a corresponding lower layer write word line, the upper layer write word line and the lower layer write word line being perpendicular to the corresponding pillar write word line.
15. The MRAM of claim 2, wherein the side wall keeper confines magnetic flux on the magnetic tunnel junction cell so that the adjacent magnetic tunnel junction cells are not affected by the magnetic field produced by the pillar write word line.
16. The MRAM of claim 2, wherein the side wall keeper is in contact with the corresponding pillar write word.
17. The MRAM of claim 10, wherein each of the pillar write word lines extends in a vertical direction, an upper end of each of the pillar write word lines being inn contact with a corresponding upper layer write word line, a lower end of each of the pillar write word lines being in contact with a corresponding lower layer write word line, the upper layer write word line and the lower layer write word line being perpendicular to the corresponding pillar write word line.
18. The MRAM of claim 11, wherein the side wall keeper confines magnetic flux on the magnetic tunnel junction cell so that the adjacent magnetic tunnel junction cells are not affected by the magnetic field produced by the pillar write word line.
19. The MRAM of claim 11, wherein the side wall keeper is in contact with the corresponding pillar write word.
Type: Application
Filed: May 31, 2007
Publication Date: Sep 27, 2007
Inventors: Chien-Chung Hung (Hsinchu), Ming-Jer Kao (Hsinchu), Yung-Hsiang Chen (Hsinchu), Shu-En Li (Hsinchu)
Application Number: 11/756,246
International Classification: G11C 11/14 (20060101);