GATE SELF-ALIGNED LOW NOISE JFET
The disclosure herein pertains to fashioning a low noise junction field effect transistor (JFET) where transistor gate materials are utilized in forming and electrically isolating active areas of a the JFET. More particularly, active regions are self aligned with patterned gate electrode material and sidewall spacers which facilitate desirably locating the active regions in a semiconductor substrate. This mitigates the need for additional materials in the substrate to isolate the active regions from one another, where such additional materials can introduce noise into the JFET. This also allows a layer of gate dielectric material to remain over the surface of the substrate, where the layer of gate dielectric material provides a substantially uniform interface at the surface of the substrate that facilitates uninhibited current flow between the active regions, and thus promotes desired device operation.
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This application is division of prior application Ser. No. 11/715,748, filed Mar. 8, 2007, the entirety of which is incorporated herein by reference.
BACKGROUNDThe disclosure herein relates generally to semiconductor processing, and more particularly to fashioning a low noise junction field effect transistor (JFET).
It can also be appreciated that transistors are basic building blocks of semiconductor circuitry and electronic devices. Accordingly, the type of transistor used depends upon the applications and the characteristics of the transistor. For example, junction field effect transistors (JFETs) generally exhibit very low 1/f noise and high input impedance. Complementary metal oxide semiconductor (CMOS) transistors, on the other hand, operate with a relatively higher level of noise and have a high impedance or low input current. Bipolar transistors, in contrast, accommodate good matching and low noise but exhibit a low impedance or a high input current. Given the desire for low noise in high performance precision analog applications and the propensity for JFET transistors to operate with low noise, it would thus be desirable to produce a JFET in a cost effective manner that allows the JFET to operate with even lower noise so that the JFET can be implemented in a high performance precision analog application.
It can also be appreciated that transistors are basic building blocks of semiconductor circuitry and electronic devices. Accordingly, the type of transistor used depends upon the applications and the characteristics of the transistor. For example, junction field effect transistors (JFETs) generally exhibit very low 1/f noise and high input impedance. Complementary metal oxide semiconductor (CMOS) transistors, on the other hand, operate with a relatively higher level of noise and have a high impedance or low input current. Bipolar transistors, in contrast, accommodate good matching and, low noise, but exhibit a low impedance or a high input current. Given the desire for low noise in high performance precision analog applications and the propensity for JFET transistors to operate with low noise, it would thus be desirable to produce a JFET in a cost effective manner that allows the JFET to operate with even lower noise so that the JFET can be implemented in a high performance precision analog application.
SUMMARYThe following presents a summary to provide a basic understanding of one or more aspects of the disclosure herein. This summary is not an extensive overview. It is intended neither to identify key or critical elements nor to delineate scope of the disclosure herein. Rather, its primary purpose is merely to present one or more aspects in a simplified form as a prelude to a more detailed description that is presented later.
The disclosure herein pertains to fashioning a low noise junction field effect transistor (JFET) where transistor gate materials are utilized in forming and electrically isolating active areas of the JFET. More particularly, active regions are self-aligned with patterned gate electrode material and sidewall spacers which facilitate desirably locating the active regions in a semiconductor substrate. This mitigates the need for additional materials in the substrate to isolate the active regions from one another, where such additional materials can introduce noise into the JFET. This also allows a layer of gate dielectric material to remain over the surface of the substrate, where the layer of gate dielectric material provides a substantially uniform interface at the surface of the substrate that facilitates uninhibited current flow between the active regions, and thus promotes desired device operation.
To the accomplishment of the foregoing and related ends, the following description and annexed drawings set forth certain illustrative aspects. Other aspects, advantages and/or features may, however, become apparent from the following detailed description when considered in conjunction with the annexed drawings.
The description herein is made with reference to the drawings, wherein like reference numerals are generally utilized to refer to like elements throughout, and wherein the various structures are not necessarily drawn to scale. In the following description, for purposes of explanation, numerous specific details are set forth in order to facilitate understanding. It may be evident, however, to one skilled in the art, that one or more aspects described herein may be practiced with a lesser degree of these specific details. In other instances, known structures and devices are shown in block diagram form to facilitate understanding.
An exemplary methodology 100 for forming a junction field effect transistor (JFET) is illustrated in
At the outset, a back or bottom gate (BG) region 202 having a first electrical conductivity type (e.g., p or n type) is formed in the semiconductor substrate 200 at 102 (
At 104, an epitaxial or EPI layer 208 having a second electrical conductivity type (e.g., n or p type) is formed (e.g., grown) over the surface of the substrate 200 (
Isolation regions 220 are then formed in the EPI layer 208 at 108 to electrically isolate different active areas from one another (
At 110, a layer of gate dielectric material 230 is formed over the EPI layer 208 and a layer of gate electrode material 232 is formed over the layer of gate dielectric material 230 (
The layer of gate electrode material 232 is then patterned at 112 stopping on the gate dielectric material structures 230 (
At 116, a top gate region 240 having the first electrical conductivity is then formed in the EPI layer 208 (
At 120, a silicidation process is performed to form silicides in/on the active regions 240, 252, 254 (
It will be appreciated that fashioning a JFET as described herein also allows a low noise (1/f) JFET to be produced in a cost effective manner. For example, the active regions 240, 252, 254 are self-aligned with the sidewall spacers 234 on the patterned gate electrode material 232 (e.g., because the sidewall spacers 234 and patterned gate electrode material 232 block dopants and thus inhibit the implantation of dopants thereunder). This self-alignment serves to form the active regions 240, 252, 254 at locations that are sufficiently separate from one another (so that regions 240, 252, 254 don't interact/influence one another). Further, the dielectric sidewall spacers 234 serve to isolate the active regions from the patterned gate electrode material 232. In this manner, shorting between the silicided active regions 240, 252, 254 and the conductive gate electrode material 232 is mitigated.
Additionally, since the active regions 240, 252, 254 are formed at desired locations within the EPI layer 208, additional materials are not needed in the EPI layer 208 to isolate the active regions 240, 252, 254 from one another, where such materials can introduce noise into the JFET. By way of example, the transistor operates, at least in part, by conducting a current between the active regions 240, 252, 254 when appropriate voltages are applied thereto. Accordingly, inserting dielectric materials into the EPI layer 208 between the active regions 240, 252, 254 would impede current flow between these regions. For example, growing FOX 220 between the regions 240, 252, 254 would place a non-conductive oxide in the current path. Moreover, FOX is (wet) grown relatively quickly to keep the fabrication process timely. This produces a lower quality oxide, however, that possesses non-uniformities or irregularities that can further interrupt or otherwise disturb current flow and thus the (anticipated) operation of the device. Similarly, forming silicide block dielectric materials in the EPI layer 208 to separate the active regions 240, 252, 254 from one another would again impede current flow. Moreover, silicide block dielectric materials may exhibit (unintended) variations because they are not self-aligned and thus may provide inconsistent current paths that would again adversely affect the (anticipated) operation of the device.
Also, while a surface shield (not shown) could be formed near the surface of the EPI layer 208 to force current to conduct a little lower in the EPI layer 208 to avoid such FOX or silicide block materials, this would add time and expense to the fabrication process because forming such a surface shield would necessitate additional masking and implantation activities. The patterned gate electrode 232 discussed herein provides a control mechanism to achieve the same effect without the associated cost. More particularly, a bias voltage can be applied to the patterned gate electrode 232 to push the current away from the surface of the EPI layer 208 to promote a reduction in noise (1/f).
It can thus be appreciated that, since additional materials are not needed in the EPI layer 208 to isolate the active regions 240, 252, 254 from one another (because the active regions 240, 252, 254 are self-aligned with the sidewall spacers 234 on the patterned gate electrode material 232 and are thus sufficiently separated from one another), the layer of gate dielectric material 230 can remain over the surface of the EPI layer 208. This is advantageous because the gate dielectric material generally comprises a high quality (e.g., oxide) material that is formed (e.g., grown) by a relatively slow (dry) process. This high quality material thus provides a substantially uniform interface at the surface of the EPI layer 208 which facilitates uninhibited current flow (e.g., low 1/f noise) between the active regions 240, 252, 254, and thus promotes desired device operation. The layer of gate dielectric material 230 also helps to mitigate out diffusion of dopants (e.g., from active regions 240, 252, 254 and well regions 212) from the surface of the EPI layer 208. Additionally, as mentioned above, the patterned gate electrode 232 provides another degree of freedom for noise mitigation by allowing current to be pushed away from the surface of the EPI layer 208.
It will be appreciated that fashioning a JFET as described herein can be readily integrated into a standard CMOS fabrication process. For example, the first, second, third and fourth patterned resists and corresponding implantations mentioned herein can be borrowed from or implemented with existing masking and implantation actions that are part of a standard CMOS fabrication process. Similarly, the layer of gate dielectric material 230 and layer of gate electrode material 232 are standard layers used in CMOS fabrication to form gate stacks of CMOS transistors (e.g., gate electrodes overlying gate dielectrics). Additionally, the illustrated ordering of acts or events disclosed herein can be varied. For example, the top gate 240 can be formed before the isolation regions 220 (or at any other time in the process flow) (e.g., by making use of/adapting earlier masking and doping activities). Fashioning a JFET as part of a standard CMOS fabrication process thus allows the JFET to be produced in a cost effective manner, which satisfies an ongoing desire in semiconductor fabrication.
While reference is made throughout this document to exemplary structures in discussing aspects of methodologies described herein (e.g., those structures presented in
Also, equivalent alterations and/or modifications may occur to those skilled in the art based upon a reading and/or understanding of the specification and annexed drawings. The disclosure herein includes all such modifications and alterations and is generally not intended to be limited thereby. In addition, while a particular feature or aspect may have been disclosed with respect to only one of several implementations, such feature or aspect may be combined with one or more other features and/or aspects of other implementations as may be desired. Furthermore, to the extent that the terms “includes”, “having”, “has”, “with”, and/or variants thereof are used herein, such terms are intended to be inclusive in meaning—like “comprising.” Also, “exemplary” is merely meant to mean an example, rather than the best. It is also to be appreciated that features, layers and/or elements depicted herein are illustrated with particular dimensions and/or orientations relative to one another for purposes of simplicity and ease of understanding, and that the actual dimensions and/or orientations may differ substantially from that illustrated herein. Further, some regions that are illustrated as having distinct or abrupt edges may not be so precisely delineated, but may instead blend slightly with other regions. This is particularly true of doped or implanted regions that may diffuse with other regions, particularly at abutting edges.
Claims
1. A junction field effect transistor (JFET) device, comprising:
- a bottom gate region having a first electrical conductivity type formed in a semiconductor substrate;
- an epitaxial layer having a second electrical conductivity type formed over the semiconductor substrate;
- well regions having the first electrical conductivity type formed in the epitaxial layer down to the bottom gate region;
- a layer of gate dielectric material formed over the epitaxial layer;
- a layer of gate electrode material formed over the layer of gate dielectric material; the layer of gate electrode material being patterned to form a plurality of patterned gate electrode material structures over the epitaxial layer over the bottom gate region;
- sidewall spacers formed adjacent to the patterned gate electrode material structures;
- a top gate region having the first electrical conductivity type formed in the epitaxial layer over the bottom gate region, in self-alignment between ones of the sidewall spacers of adjacent ones of the patterned gate electrode material structures; and
- source and drain regions having the second electrical conductivity type formed in the epitaxial layer over the bottom gate region, in self-alignment with respective other ones of the sidewall spacers of the patterned gate electrode material structures, the top gate region being situated between the source region and the drain region.
2. The device of claim 1, wherein the top gate region and the source and drain regions are silicided.
3. The device of claim 2, wherein dopant concentration of the well regions is lower than dopant concentration of the bottom gate region.
4. The device of claim 2, wherein dopant concentration of the source and drain regions is greater than dopant concentration of the epitaxial layer.
5. The device of claim 4, wherein dopant concentration of the well regions is lower than dopant concentration of the bottom gate region.
6. The device of claim 1, wherein dopant concentration of the source and drain regions is greater than dopant concentration of the epitaxial layer.
7. The device of claim 6, wherein dopant concentration of the well regions is lower than dopant concentration of the bottom gate region.
8. The device of claim 7, wherein the layer of gate dielectric material comprises an oxide based material and has a thickness of between about 1 nm and about 20 nm
9. The device of claim 8, wherein the source and drain regions, the top gate region, the patterned gate electrode material and the sidewall spacers are situated between the well regions.
10. The device of claim 9, the source and drain regions are substantially equidistant from the top gate region.
11. The device of claim 1, wherein dopant concentration of the well regions is lower than dopant concentration of the bottom gate region.
12. A junction field effect transistor (JFET) device, comprising:
- a bottom gate region having a first electrical conductivity type formed in a semiconductor substrate;
- an epitaxial layer having a second electrical conductivity type formed over the semiconductor substrate; first and second well regions having the first electrical conductivity type formed at spaced apart locations in the epitaxial layer down to the bottom gate region;
- a layer of gate dielectric material formed over the epitaxial layer;
- a layer of gate electrode material formed over the layer of gate dielectric material; the layer of gate electrode material being patterned to form first and second patterned gate electrode material structures over the epitaxial layer over the bottom gate region, between the first and second well regions;
- sidewall spacers formed on sides of the first and second patterned gate electrode material structures;
- a top gate region having the first electrical conductivity type formed in the epitaxial layer over the bottom gate region, between facing ones of the sidewall spacers of the first and second patterned gate electrode material structures; and
- a source region having the second electrical conductivity type formed in the epitaxial layer over the bottom gate region, between a non-facing one of the sidewall spacers of the first patterned gate electrode material structure and the first well region; and
- a drain region having the second electrical conductivity type formed in the epitaxial layer over the bottom gate region, between a non-facing one of the sidewall spacers of the second patterned gate electrode material structure and the second well region.
13. The device of claim 12, wherein dopant concentration of the first and second well regions is lower than dopant concentration in the bottom gate region; and dopant concentration of the source and drain regions is greater than dopant concentration in the epitaxial layer.
14. The device of claim 12, wherein the first and second wells are located at laterally opposite ends of the bottom gate region.
15. The device of claim 12, further comprising silicided contacts formed for the drain, source and top gate regions.
16. The device of claim 12, wherein the layer of gate electrode material also include third and fourth patterned gate electrode material structures respectively formed adjacent to the first and second well regions and with at least portions over the epitaxial layer and over the bottom gate region; the source region is formed between the first and third patterned gate electrode material structures; and the drain region is formed between the second and fourth patterned gate electrode structures.
17. The device of claim 16, wherein the third and fourth patterned gate electrode material structures are formed with other portions respectively situated over the first and second well regions.
18. The device of claim 16, wherein the sidewall spacers are also formed on sides of the third and forth patterned gate electrode material structures; the source region is formed between facing ones of the sidewall spacers of the first and third patterned gate electrode material structures; and the drain region is formed between facing ones of the sidewall spacers of the second and fourth patterned gate electrode structures.
19. The device of claim 18, wherein the top gate region, the source region and the drain region are respectively formed in self-alignment between different adjacent ones of the sidewall structures.
20. The device of claim 18, wherein the first and second wells are located at laterally opposite ends of the bottom gate region; and the third and fourth patterned gate electrode material structures are formed with other portions respectively situated over the first and second well regions.
Type: Application
Filed: Jun 29, 2010
Publication Date: Oct 21, 2010
Applicant: TEXAS INSTRUMENTS INCORPORATED (Dallas, TX)
Inventors: Xiaoju Wu (Irving, TX), Fan-Chi Frank Hou (McKinney, TX), Pinghai Hao (Plano, TX)
Application Number: 12/825,580
International Classification: H01L 27/085 (20060101); H01L 29/80 (20060101);