BURIED WORD LINE STRUCTURE AND METHOD OF MAKING THE SAME
A method of fabricating a buried word line structure includes providing a substrate with a word line trench therein. Two source/drain doped regions are disposed in the substrate at two sides of the word line trench. Later, a silicon oxide layer is formed to cover the word line trench. A titanium nitride layer is formed to cover the silicon oxide layer. Next, a tilt ion implantation process is performed to implant silicon atoms into the titanium nitride layer to transform part of the titanium nitride layer into a titanium silicon nitride layer. A conductive layer is formed in the word line trench. Subsequently, part of the conductive layer, part of the titanium silicon nitride layer and part of the silicon oxide layer are removed to form a recess. Finally, a cap layer fills in the recess.
The present invention relates to a buried word line structure and a method of fabricating the same, and more particularly to a buried word line structure which reduces the gate-induced drain leakage (GIDL) problem.
2. Description of the Prior ArtAs device geometries shrink, reliability problems due to gate induced drain leakage forces the integrated circuit to operate at voltages which are lower than desired for best performance. When the device is biased, gate induced drain leakage results from the generation of electron-hole pairs in the surface of the depletion region of a transistor along the area where the gate conductor overlaps the drain diffusion region, such that the drain potential is more positive than the gate potential.
DRAM is a commonly-seen memory and is widely used in computers and other electronic appliances. DRAM includes a memory cell array composed of capacitors to store data. In a DRAM array, gate induced drain leakage degrades data retention time.
Therefore, there is a need to produce a structure which eliminates the gate induced drain leakage problem.
SUMMARY OF THE INVENTIONAccording to a preferred embodiment of the present invention, a method of fabricating a buried word line structure comprises: providing a substrate with a word line trench therein, and two source/drain doped regions disposed in the substrate at two sides of the word line trench. Later, a silicon oxide layer is formed to cover the word line trench. Then, a titanium nitride layer is formed to cover the silicon oxide layer. Subsequently, a tilt ion implantation process is performed to implant silicon atoms into the titanium nitride layer to transform part of the titanium nitride layer into a titanium silicon nitride layer. Next, a conductive layer is formed in the word line trench. After that, part of the conductive layer, part of the titanium silicon nitride layer and part of the silicon oxide layer are removed to forma recess. Finally, a cap layer is formed to fill in the recess.
According to another preferred embodiment of the present invention, a buried word line structure includes a substrate. A word line trench is disposed within the substrate, wherein the word line trench comprises a first trench and a second trench connected to the first trench. The first trench comprises an opening and a first sidewall. The second trench comprises a second sidewall and a bottom wherein a width of the opening is greater than the width of the bottom, and the second sidewall includes an arced corner; the arced corner connects to the first sidewall. A silicon oxide layer covers the second trench, wherein a thickness of the silicon oxide layer contacting the arced corner is greater than a thickness of the silicon oxide layer contacting the bottom. A word line is disposed within the second trench. A cap layer is disposed in the first trench. Two source/drain doped regions are in the substrate at two sides of the word line.
According to yet another preferred embodiment of the present invention, a method of fabricating a buried word line structure comprises providing a substrate having a doped region. Next, a first trench is formed in the doped region and separates the doped region into two source/drain doped regions. Then, a mask layer is formed to cover a sidewall of the first trench. Subsequently, the substrate is etched to form a second trench by taking the mask layer and the source/drain doped regions as a mask, wherein the first trench and the second trench forma step profile. After forming the second trench, the mask layer is removed entirely. Later, an oxidation process is performed to form a silicon oxide layer covering the first trench and the second trench. Finally, a word line is formed in the first trench and the second trench.
These and other objectives of the present invention will no doubt become obvious to those of ordinary skill in the art after reading the following detailed description of the preferred embodiment that is illustrated in the various figures and drawings.
A silicon oxide layer 22 is formed to cover the inner sidewall of the word line trench 14. The silicon oxide layer 22 may be formed by an in situ steam generation (ISSG) process, a deposition process or a thermal oxidation process. As shown in
An interface 28 is formed between the TiN layer 24 and the TiSiN layer 26. In example (a), the interface 28 is lower than the bottom 18 of the source/drain doped regions 16. Furthermore, a distance between the interface 28 and the bottom 18 along the vertical direction Y is smaller than 0.2 times of the distance D. In example (b), the interface 28 aligns with the bottom 18 of each of the source/drain doped regions 16. In example (c), the interface 28 is higher than the bottom 18 of each of the source/drain doped regions 16. Furthermore, a distance between the interface 28 and the bottom 18 along the vertical direction Y is smaller than 0.2 times of the distance D. According to a preferred embodiment of the present invention, the position of the interface 28 in example (b) is a preferred position. Subsequent figures take the position of the interface 28 in example (b) as an example. The tilt angle of the tilt ion implantation process is preferably between 5 and 20 degrees. The tilt angle refers to the angle between the path of the silicon atoms and the normal line of the top surface of the substrate 10. The concentration of silicon atoms is between 5E13 and 1E16 atoms/cm2. The implant energy of the silicon atoms is between 0.2 and 30 kev. The tilt angle, the concentration of silicon atoms, and the implant energy can be altered based on different requirements.
As shown in
In the present invention, the silicon atoms are implanted into the TiN layer 24 to make part of the TiN layer 24 become the TiSiN layer 26. The TiSiN layer 26 is formed by a tilt ion implantation process, and the range of the TiSiN layer 26 can be adjusted by altering the tilt angle of the tilt ion implantation process. Therefore, no extra mask is used in the process of forming the TiSiN layer 26. The work function value of the TiN layer 24 is around 4.5 ev, and the work function value of the TiSiN layer 26 is around 4.2 ev. Because the work function value of the TiSiN layer 26 is lower than the work function value of the TiN layer 24, it is harder to form an electric field between the TiSiN layer 26 and the source/drain doped regions 16 than to form an electric field between the TiN layer 24 and the source/drain doped regions 16. Therefore, the TiSiN layer 26 can lower the GIDL problem.
As shown in
As shown in
As shown in example (a) in
In
As shown in
According to the present invention, the first trench 64 and the second trench 74 are formed in sequence by taking the mask layer 68 as a mask. Therefore, a step profile 76 can be formed. Next, the arced corner 82 is formed by oxidized the step profile 76. The silicon oxide layer 78 formed on the arced corner 82 is thicker than the silicon oxide layer 78 on other positions of the first trench 64 and the second trench 74. Therefore, the silicon oxide layer 78 formed on the arced corner 82 can prevent the GIDL problem.
Those skilled in the art will readily observe that numerous modifications and alterations of the device and method may be made while retaining the teachings of the invention. Accordingly, the above disclosure should be construed as limited only by the metes and bounds of the appended claims.
Claims
1. A method of fabricating a buried word line structure, comprising:
- providing a substrate with a word line trench therein, and two source/drain doped regions disposed in the substrate at two sides of the word line trench;
- forming a silicon oxide layer covering the word line trench;
- forming a titanium nitride layer covering the silicon oxide layer;
- performing a tilt ion implantation process to implant silicon atoms into the titanium nitride layer to transform part of the titanium nitride layer into a titanium silicon nitride layer;
- forming a conductive layer in the word line trench;
- removing part of the conductive layer, part of the titanium silicon nitride layer and part of the silicon oxide layer to form a recess; and
- forming a cap layer filling in the recess.
2. The method of fabricating a buried word line structure of claim 1, wherein a first distance along a vertical direction is between a bottom of each of the source/drain doped regions and a bottom of the word line trench, wherein the vertical direction is perpendicular to a top surface of the substrate.
3. The method of fabricating a buried word line structure of claim 2, wherein an interface is between the titanium nitride and the titanium silicon nitride layer, the interface is higher than the bottom of each of the source/drain doped regions, a second distance along the vertical direction is between the interface and the bottom of each of the source/drain doped regions, and the second distance is smaller than 0.2 times of the first distance.
4. The method of fabricating a buried word line structure of claim 2, wherein an interface is between the titanium nitride and the titanium silicon nitride layer, the interface is lower than the bottom of each of the source/drain doped regions, a second distance along the vertical direction is between the interface and the bottom of each of the source/drain doped regions, and the second distance is smaller than 0.2 times of the first distance.
5. The method of fabricating a buried word line structure of claim 2, wherein an interface is between the titanium nitride and the titanium silicon nitride layer, the interface is aligned with the bottom of each of the source/drain doped regions.
6. A buried word line structure, comprising:
- a substrate;
- a word line trench disposed within the substrate, wherein the word line trench comprises: a first trench comprising an opening and a first sidewall; and a second trench connecting to the first trench, wherein the second trench comprises a second sidewall and a bottom, a width of the opening is greater than the width of the bottom, the second sidewall comprises an arced corner, and the arced corner connects to the first sidewall;
- a silicon oxide layer covering the second trench, wherein a thickness of the silicon oxide layer contacting the arced corner is greater than a thickness of the silicon oxide layer contacting the bottom;
- a word line disposed within the second trench;
- a cap layer disposed in the first trench; and
- two source/drain doped regions in the substrate at two sides of the word line.
7. The buried word line structure of claim 6, wherein the arced corner is disposed within one of the two source/drain doped regions.
8. The buried word line structure of claim 6, wherein the arced corner is below one of the two source/drain doped regions.
9. The buried word line structure of claim 6, wherein the silicon oxide layer contacting the arced corner comprises a top surface and a side surface, and the top surface and the side surface form a right angle.
10. A method of fabricating a buried word line structure, comprising:
- providing a substrate having a doped region;
- forming a first trench in the doped region to separate the doped region into two source/drain doped regions;
- forming a mask layer covering a sidewall of the first trench;
- etching the substrate to form a second trench by taking the mask layer and the source/drain doped regions as a mask, wherein the first trench and the second trench form a step profile;
- after forming the second trench, removing the mask layer entirely;
- performing an oxidation process to form a silicon oxide layer covering the first trench and the second trench; and
- forming a word line in the first trench and the second trench.
11. The method of fabricating a buried word line structure of claim 10, wherein the mask layer comprises silicon nitride or titanium nitride.
12. The method of fabricating a buried word line structure of claim 10, wherein during the oxidation process, the step profile is oxidized into an arced corner.
13. The method of fabricating a buried word line structure of claim 12, wherein a thickness of the silicon oxide layer contacting the arced corner is greater than a thickness of the silicon oxide layer contacting a bottom of the second trench.
Type: Application
Filed: Sep 21, 2017
Publication Date: Feb 28, 2019
Inventors: Ger-Pin Lin (Tainan City), Kuan-Chun Lin (Tainan City), Chi-Mao Hsu (Tainan City), Shu-Yen Chan (Changhua County), Shih-Fang Tzou (Tainan City), Tsuo-Wen Lu (Kaohsiung City), Tien-Chen Chan (Tainan City), Feng-Yi Chang (Tainan City), Shih-Kuei Yen (Tainan City), Fu-Che Lee (Taichung City)
Application Number: 15/712,133