SEMICONDUCTOR PROCESSING TOOL AND METHOD OF OPERATION
In some implementations, a control device may determine a spacing measurement in a first dimension between a wafer on a susceptor and a pre-heat ring of a semiconductor processing tool and/or a gapping measurement in a second dimension between the wafer and the pre-heat ring, using one or more images captured in situ during a process by at least one optical sensor. Accordingly, the control device may generate a command based on a setting associated with the process being performed by the semiconductor processing tool and the spacing measurement and/or the gapping measurement. The control device may provide the command to at least one motor to move the susceptor.
This Patent application claims priority to U.S. Provisional Patent Application No. 63/263,902, filed on Nov. 11, 2021, and entitled “SEMICONDUCTOR PROCESSING TOOL AND METHOD OF OPERATION.” The disclosure of the prior Application is considered part of and is incorporated by reference into this Patent Application.
BACKGROUNDSemiconductor structures, such as sources, drains, and gates, are often deposited using chemical vapor deposition (CVD) or other similar deposition processes. Accordingly, the structures may be formed by growing a film on the surface of a semiconductor wafer. In order to perform CVD, the wafer is generally mounted on a susceptor. The film is deposited on the wafer.
Aspects of the present disclosure are best understood from the following detailed description when read with the accompanying figures. It is noted that, in accordance with the standard practice in the industry, various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.
The following disclosure provides many different embodiments, or examples, for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. For example, the formation of a first feature over or on a second feature in the description that follows may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features may be formed between the first and second features, such that the first and second features may not be in direct contact. In addition, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.
Further, spatially relative terms, such as “beneath,” “below,” “lower,” “above,” “upper” and the like, may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The apparatus may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may likewise be interpreted accordingly.
In some cases, a susceptor is surrounded by a pre-heat ring that warms a wafer on the susceptor in advance of providing a gas including precursor materials. The pre-heat ring also helps maintain a temperature of the wafer during the deposition process. Maintaining the temperature of the wafer helps ensure that sources and drains are deposited to consistent thicknesses on the wafer and that gates are deposited to a desired critical dimension (CD) on the wafer, both of which depend on the temperature of the wafer.
The temperature profile of the wafer depends on a gapping between the susceptor and the pre-heat ring (e.g., along a z-dimension) as well as a spacing between the susceptor and the pre-heat ring (e.g., within an x-y plane). Generally, the gapping and the spacing are adjusted using an iterative process of test deposition, adjustment, another test deposition, another adjustment, and so on. This process is long and wastes manufacturing materials. The process also can cause contamination of wafers because the vacuum is disturbed during each adjustment such that impurities may be introduced into the susceptor environment. Finally, this process is not dynamic and is therefore limited to a particular temperature and flow of the gas. Other deposition processes that use different temperatures and/or gas flows will depend on a new adjustment process for the susceptor.
Some implementations described herein provide techniques and apparatuses for dynamically adjusting gapping and/or spacing of a susceptor relative to a pre-heat ring in situ. For example, a detector, such as a laser or a camera (e.g., a charge-coupled device (CCD) camera), may be configured to measure the gapping and/or the spacing during a process performed by a semiconductor processing tool including the susceptor. Accordingly, a control system instructs a motor to adjust a position of the susceptor based on the measured gapping and the measured spacing. For example, the control system may be programmed with a desired gapping and a desired spacing for a current deposition process such that the control system iteratively instructs the motor to adjust the susceptor until the measured gapping and the measured spacing are within a threshold of the desired gapping and the desired spacing, respectively. As a result, the susceptor is adjusted more quickly and accurately than using the prior iterative process. Additionally, the susceptor is adjusted without disturbing the vacuum within the susceptor environment, which decreases a chance of impurities entering the environment and spoiling deposition processes. Fewer spoiled deposition processes result in less production time that is lost and fewer materials that are wasted.
Additionally, in some implementations, the control system is programmed with a series of deposition processes such that the detector instructs the motor to perform adjustments between each process. For example, an epitaxial structure may be formed successively without removing the epitaxial structure from the susceptor between deposition processes. As a result, production time is reduced. Additionally, the susceptor is adjusted between deposition processes without disturbing the vacuum, which decreases a chance of impurities entering the environment and spoiling later deposition processes, and without moving the wafer, which decreases a chance of the wafer being scratched or otherwise damaged during movement. Fewer spoiled deposition processes and fewer damaged wafers result in less production time that is lost and fewer materials that are wasted.
As shown in
The susceptor 101 may be located within a susceptor environment that is at least a partial vacuum. Accordingly, as shown in
Additionally with the dome formed by dome portions 105a, 105b, and 105c, a sidewall including sidewall portions 107a, 107b, 107c, and 107d supports the partial vacuum within the chamber. Sidewall portions 107a, 107b, 107c, and 107d may each be formed of metal, plastic, and/or another hard material that can support the chamber against external pressure caused by the partial vacuum. As further shown in
As further shown in
In order to load the wafer 103 on the susceptor 101 and unload the wafer 103 from the susceptor 101, the semiconductor processing tool 100 may include a lifting mechanism (also referred to as a substrate lift portion) that includes a plurality of arms, such as arms 113a and 113b. In some implementations, the lifting mechanism may, similar to column 109, include a central support for the plurality of arms. As an alternative, each arm 113a and 113b may be attached to a separate support, as shown in
As further shown in
The wafer 103 may be moved up and down using lift pins 115a and 115b. For example, the column 109 may move downward and/or the arms 113a and 113b may move upward in order to push lift pins 115a and 115b through the holes in the susceptor 101. Accordingly, the lift pins 115a and 115b may contact an underside of wafer 103 and lift the wafer 103 off the susceptor 101. Similarly, the column 109 may move upward and/or the arms 113a and 113b may move downward such that gravity pulls lift pins 115a and 115b through the holes in the susceptor 101. Accordingly, the lift pins 115a and 115b may lower the wafer 103 on the susceptor 101 and stop contacting the underside of wafer 103.
Using additional lift pins and corresponding arms provides more stability to the wafer 103 during raising and lowering, which reduces chances of the wafer 103 slipping on the lift pins or falling off (which would result in a wasted wafer). It also distributes weight of the susceptor 101 and the wafer 103 over more arms, which reduces stress to each arm and increases an expected lifespan of each arm. Using fewer lift pins and corresponding arms reduces a quantity of contact points with the lift pins, which reduces chances of damaging the wafer 103 from scratching the underside with the lift pins (which would result in a wasted wafer). It also conserves materials and time used to build the semiconductor processing tool 100.
The processing step performed on the wafer 103 (such as a CVD process step) may also use heat to trigger and control epitaxial growth on the wafer 103. Accordingly, a pre-heat ring formed by portions 117a and 117b may generate heat (e.g., using an electric current or other form of convection) to maintain a temperature of the wafer 103 during the processing step. Although shown as including one pre-heat ring, the semiconductor processing tool 100 may include a plurality of pre-heat rings around the susceptor 101 (e.g., as described in connection with
The number and arrangement of components shown in
As shown in
Additionally, in some implementations, the sidewall portion 107d may include a flange 205 (also referred to as a stepped portion). The flange 205 may include an insulating material. Accordingly, in some implementations, the flange 205 reduces heat lost from the second ring 203 to the sidewall portion 107d, which conserves power during performance of a processing step.
As further shown in
In some implementations, the spacings 207a and 207b may be equal. As an alternative, when the susceptor 101 is angled relative to a second dimension (perpendicular to the first dimension, such as along a z axis), the spacings 207a and 207b may be different. Additionally, or alternatively, when the pre-heat ring is not linear along the second dimension (e.g., because the pre-heat ring includes a plurality of components, such as the first ring 201 and the second ring 203), the spacings 207a and 207b may be different. Accordingly, the “spacing” at a point on the susceptor 101 may refer to an average or other combination of spacings 207a and 207b or may refer to a selected one of spacings 207a and 207b (such as a larger of the spacings, a smaller of the spacings, always spacing 207a, or always spacing 207b).
In some implementations, the top surface of the susceptor 101 and the top surface of the pre-heat ring may be located at different points along the second dimension. Accordingly, the “spacing” may refer to a projection of the vector from one of the top surfaces to the other of the top surfaces along an axis associated with the first dimension (e.g., a projection onto the x-y plane). Similarly, the bottom surface of the susceptor 101 and the bottom surface of the pre-heat ring may be located at different points along the second dimension. Accordingly, the “spacing” may refer to a projection of the vector from one of the bottom surfaces to the other of the bottom surfaces along an axis associated with the first dimension (e.g., a projection onto the x-y plane).
The number and arrangement of components shown in
As shown in
Similarly, the susceptor 101 may be associated with a plurality of gappings associated with a second dimension (e.g., a dimension along a z axis) between the susceptor 101 and the pre-heat ring (e.g., the first ring 201 and the second ring 203). For example, as described in connection with
The number and arrangement of components shown in
Accordingly, as shown in
Additionally, as shown in
The number and arrangement of components shown in
As shown in
Although implementation 500 is depicted with a single optical sensor 501, other implementations may include additional optical sensors. For example, using a second optical sensor to capture view 510a can reduce processing resources used to determine spacing and gapping from the corresponding image because the view 510a may be captured using a smaller angle relative to the z axis. Using fewer optical sensors conserves power.
As shown in
Although implementation 500 is depicted with the controller 505 receiving the images and performing the determination, other implementations may include the at least one optical sensor 501 performing the determination and providing the at least one spacing measurement 403 and at least one gapping measurement 405 to the controller 505. For example, using the at least one optical sensor 501 to perform the determination can reduce communication latency between the at least one optical sensor 501 and the controller 505 as well as reduce memory overhead at the controller 505. Using the controller 505 to perform the determination can reduce processing overhead at the least one optical sensor 501 and allow for use of a less complex optical sensor rather than a more complex optical sensor.
As shown in
Accordingly, the controller 505 may determine a difference between the spacing measurement 403 and the desired spacing and/or a difference between the gapping measurement 405 and the desired gapping. The controller 505 may therefore generate commands for the motors 503a and 503b based on the difference(s). In some implementations, the controller 505 uses a database (e.g., a relational database, such as a table, or another type of database) and/or another data structure to determine the command(s) associated with reducing the difference(s). For example, the controller 505 may use the database to determine that a 1 mm movement of motor 503a and/or motor 503b is associated with a change in spacing and/or change in gapping, a 2 mm movement of motor 503a and/or motor 503b is associated with a different change in spacing and/or change in gapping, and so on. The data structure may be constructed iteratively using a plurality of tests and stored in memory for future use. Additionally with, or alternatively to, the data structure, the controller 505 may use an equation and/or another formula that accepts the difference(s) as input and outputs the command(s) for the motors 503a and 503b. The formula may be estimated from a plurality of tests and stored in memory for future use. In some implementations, a machine learning model generate the formula to use; for example, the model may accept inputs based on the plurality of tests and output the formula to use.
In some implementations, the controller 505 is configured to use a machine-learning model, which is trained based on historical data, to generate commands to move the motors 503a and 503b. For example, the machine-learning model may correlate historical changes in spacing and/or gapping and/or parameters associated with the motors 503a and 503b. Examples of historical parameters include model information associated with the motors 503a and 503b, operating voltages associated with the motors 503a and 503b, and/or movement ranges associated with the motors 503a and 503b, among other examples. For a combination of changes and/or parameters, the machine-learning model may have been trained to estimate commands to the motors 503a and 503b that result in changes to spacing and/or gapping. Accordingly, the machine-learning model may accept the difference between the spacing measurement 403 and the desired spacing and/or the difference between the gapping measurement 405 and the desired gapping and output the commands to provide to the motors 503a and 503b.
Motors 503a and 503b may each include pneumatic motors, servo motors, and/or other motors configured to move the column 109 vertically (e.g., to adjust gapping) and/or laterally (e.g., to adjust spacing). Although implementation 500 is depicted with two motors 503a and 503b, other implementations may include a single motor or more than two motors. For example, using additional motors provides more precise control over adjustments in gapping and spacing. This can reduce a quantity of iterations used to adjust the susceptor 101 (e.g., as described in greater detail below), which conserves power and processing resources overall. Using fewer motors conserves power during adjustments and consumes fewer processing resources at the controller 505 because fewer commands are generated and transmitted.
In some implementations, a rotational motor may be used in addition to, or in lieu of, motors 503a and 503b. Accordingly, the rotational motor may rotate the susceptor 101 during the processing step in order to further produce a consistent temperature profile across a wafer 103 on the susceptor 101. Additionally, in some implementations, the rotational motor moves the column 109 up and down so as to adjust the susceptor 101 vertically.
Accordingly, as shown in
When the updated spacing measurement 403′ and/or the updated gapping measurement 405′ do not satisfy the spacing threshold and/or the gapping threshold, respectively, the controller 505 may iteratively perform the process described in connection with
Once the updated spacing measurement 403′ and/or the updated gapping measurement 405′ satisfy the spacing threshold and/or the gapping threshold, respectively, the controller 505 may generate and provide a command to a susceptor blade to load a wafer 103 on the susceptor 101 (e.g., as described in connection with
Once the wafer 103 is loaded, the controller 505 may generate and provide a command to the semiconductor processing tool 100 to perform the processing step (e.g., as described in connection with
By adjusting the susceptor 101 as described in connection with implementation 500, the susceptor 101 is adjusted more quickly and accurately. Additionally, the susceptor 101 is adjusted without disturbing the vacuum within the susceptor environment, which decreases a chance of impurities entering the environment and spoiling deposition processes. Fewer spoiled deposition processes result in less production time that is lost and fewer materials that are wasted.
The number and arrangement of components shown in
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Accordingly, as shown in
When the updated spacing measurement 403′ and/or the updated gapping measurement 405′ do not satisfy the spacing threshold and/or the gapping threshold, respectively, the controller 505 may iteratively perform the process described in connection with
Once the updated spacing measurement 403′ and/or the updated gapping measurement 405′ satisfy the spacing threshold and/or the gapping threshold, respectively, the controller 505 may generate and provide a command to the semiconductor processing tool 100 to perform the processing step. In some implementations, the controller 505 additionally generates and provides a command to a rotational motor to rotate the susceptor 101 during the processing step.
As shown in
Accordingly, the controller 505 may determine a difference between the updated spacing measurement 403′ and the additional desired spacing and/or a difference between the updated gapping measurement 405′ and the additional desired gapping. The controller 505 may therefore generate commands for the motors 503a and 503b based on the difference(s).
Accordingly, as shown in
When the updated spacing measurement 403″ and/or the updated gapping measurement 405″ do not satisfy the spacing threshold and/or the gapping threshold, respectively, the controller 505 may iteratively perform the process described in connection with
Once the updated spacing measurement 403″ and/or the updated gapping measurement 405″ satisfy the spacing threshold and/or the gapping threshold, respectively, the controller 505 may generate and provide a command to the semiconductor processing tool 100 to perform the additional processing step. In some implementations, the controller 505 additionally generates and provides a command to a rotational motor to rotate the susceptor 101 during the additional processing step.
As shown in
In some implementations, the controller 505 additionally generates and provides a command to the rotational motor to stop rotating the susceptor 101 after the processing step is complete. Although described with reference to two processing steps, implementation 600 may further include additional processing steps with corresponding adjustments of spacing and/or gapping associated with the susceptor 101.
By adjusting the susceptor 101 as described in connection with implementation 600, an epitaxial structure (e.g., as described in connection with
The number and arrangement of components shown in
Additionally, using the semiconductor processing tool 100 of
Accordingly, the combination of epitaxial layers 711a and 711b with epitaxial layers 713a and 713b form a source region or a drain region on a wafer (e.g., wafer 103). As shown in
The number and arrangement of components shown in
Bus 810 includes one or more components that enable wired and/or wireless communication among the components of device 800. Bus 810 may couple together two or more components of
Memory 830 includes volatile and/or nonvolatile memory. For example, memory 830 may include random access memory (RAM), read only memory (ROM), a hard disk drive, and/or another type of memory (e.g., a flash memory, a magnetic memory, and/or an optical memory). Memory 830 may include internal memory (e.g., RAM, ROM, or a hard disk drive) and/or removable memory (e.g., removable via a universal serial bus connection). Memory 830 may be a non-transitory computer-readable medium. Memory 830 stores information, instructions, and/or software (e.g., one or more software applications) related to the operation of device 800. In some implementations, memory 830 includes one or more memories that are coupled to one or more processors (e.g., processor 820), such as via bus 810.
Input component 840 enables device 800 to receive input, such as user input and/or sensed input. For example, input component 840 may include a touch screen, a keyboard, a keypad, a mouse, a button, a microphone, a switch, a sensor, a global positioning system sensor, an accelerometer, a gyroscope, and/or an actuator. Output component 850 enables device 800 to provide output, such as via a display, a speaker, and/or a light-emitting diode. Communication component 860 enables device 800 to communicate with other devices via a wired connection and/or a wireless connection. For example, communication component 860 may include a receiver, a transmitter, a transceiver, a modem, a network interface card, and/or an antenna.
Device 800 may perform one or more operations or processes described herein. For example, a non-transitory computer-readable medium (e.g., memory 830) may store a set of instructions (e.g., one or more instructions or code) for execution by processor 820. Processor 820 may execute the set of instructions to perform one or more operations or processes described herein. In some implementations, execution of the set of instructions, by one or more processors 820, causes the one or more processors 820 and/or the device 800 to perform one or more operations or processes described herein. In some implementations, hardwired circuitry may be used instead of or in combination with the instructions to perform one or more operations or processes described herein. Additionally, or alternatively, processor 820 may be configured to perform one or more operations or processes described herein. Thus, implementations described herein are not limited to any specific combination of hardware circuitry and software.
The number and arrangement of components shown in
As shown in
As further shown in
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Process 900 may include additional implementations, such as any single implementation or any combination of implementations described below and/or in connection with one or more other processes described elsewhere herein.
In a first implementation, the second epitaxial growth causes formation of merged source/drain regions across at least two of the recessed fins 707a/707b.
In a second implementation, alone or in combination with the first implementation, process 900 further includes rotating the susceptor 101 during the deposition, the first epitaxial growth, and the second epitaxial growth.
In a third implementation, alone or in combination with one or more of the first and second implementations, a rotation speed associated with one of the deposition, the first epitaxial growth, or the second epitaxial growth is different from a rotation speed associated with another of the deposition, the first epitaxial growth, or the second epitaxial growth.
In a fourth implementation, alone or in combination with one or more of the first through third implementations, the at least one motor 503a/503b performs adjustments in situ based on input from at least one optical sensor 501.
In a fifth implementation, alone or in combination with one or more of the first through fourth implementations, process 900 further includes unloading the wafer 103 from the susceptor 101 after the second epitaxial growth.
Although
In this way, spacing and/or gapping, of a susceptor relative to a pre-heat ring, are dynamically adjusted. For example, the controller 505 uses the at least one optical sensor 501 to determine a gapping measurement and/or a spacing measurement. Accordingly, the controller 505 instructs the at least one motor 503a/503b to adjust the susceptor 101 based on the gapping measurement and/or the spacing measurement. As a result, the susceptor 101 is adjusted more quickly and accurately. Additionally, the susceptor 101 is adjusted without disturbing the vacuum within the susceptor environment, which decreases a chance of impurities entering the environment and spoiling deposition processes. Fewer spoiled deposition processes result in less production time that is lost and fewer materials that are wasted. Additionally, in some implementations, the controller 505 is programmed with a series of processing steps such the at least one motor 503a/503b performs adjustments between each processing step. Accordingly, an epitaxial structure may be formed successively without removing the wafer 103 from the susceptor between processing steps. As a result, production time is reduced. Additionally, the susceptor 101 is adjusted between processing steps without disturbing the vacuum, which decreases a chance of impurities entering the environment and spoiling later deposition processes, and without moving the wafer 103, which decreases a chance of the wafer 103 being scratched or otherwise damaged during movement. Fewer spoiled deposition processes and fewer damaged wafers result in less production time that is lost and fewer materials that are wasted.
As described in greater detail above, some implementations described herein provide a device. The device includes at least one motor configured to move a susceptor of a semiconductor processing tool, wherein the at least one motor is configured to move the susceptor vertically, laterally, or a combination thereof in situ during a process according to a command. The device includes a controller configured to receive input during the process associated with a spacing measurement in a first dimension between a wafer on the susceptor and a pre-heat ring, a gapping measurement in a second dimension between the wafer and the pre-heat ring, or a combination thereof, and configured to provide the command to the at least one motor based on the input.
As described in greater detail above, some implementations described herein provide a method. The method includes determining at least one of a spacing measurement in a first dimension between a susceptor and a pre-heat ring of a semiconductor processing tool, a gapping measurement in a second dimension between the susceptor and the pre-heat ring, or a combination thereof, using one or more images captured by at least one optical sensor. The method includes generating a command based on a setting associated with a processing step being performed by the semiconductor processing tool and the spacing measurement, the gapping measurement, or the combination thereof. The method includes providing the command to at least one motor to move a column supporting the susceptor.
As described in greater detail above, some implementations described herein provide a method. The method includes loading a wafer having a plurality of recessed fins onto a susceptor. The method further includes depositing doped material on the recessed fins using a semiconductor processing tool including the susceptor, wherein at least one of a spacing measurement in a first dimension between the wafer and a pre-heat ring of the semiconductor processing tool, a gapping measurement in a second dimension between the wafer and the pre-heat ring, or a combination thereof, is adjusted in situ during the deposition by at least one motor configured to move the susceptor. The method includes causing a first epitaxial growth on the doped material using the semiconductor processing tool, wherein at least one of an updated spacing measurement, an updated gapping measurement, or a combination thereof, is adjusted in situ during the first epitaxial growth by the at least one motor. The method further includes causing a second epitaxial growth on the doped material using the semiconductor processing tool, wherein at least one of a further updated spacing measurement, a further updated gapping measurement, or a combination thereof, is adjusted in situ during the second epitaxial growth by the at least one motor.
As used herein, “satisfying a threshold” may, depending on the context, refer to a value being greater than the threshold, greater than or equal to the threshold, less than the threshold, less than or equal to the threshold, equal to the threshold, not equal to the threshold, or the like.
The foregoing outlines features of several embodiments so that those skilled in the art may better understand the aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions, and alterations herein without departing from the spirit and scope of the present disclosure.
Claims
1. A device, comprising:
- at least one motor configured to move a susceptor of a semiconductor processing tool, wherein the at least one motor is configured to move the susceptor vertically, laterally, or a combination thereof in situ during a process according to a command; and
- a controller configured to receive input during the process associated with a spacing measurement in a first dimension between a wafer on the susceptor and a pre-heat ring, a gapping measurement in a second dimension between the wafer and the pre-heat ring, or a combination thereof, and configured to provide the command to the at least one motor based on the input.
2. The device of claim 1, wherein the input comprises at least one image, from at least one optical sensor, associated with the susceptor and the pre-heat ring, and the controller uses the at least one image to determine the spacing measurement and the gapping measurement.
3. The device of claim 1, wherein the input includes at least one first image, from at least one first optical sensor, associated with the spacing measurement between the susceptor and the pre-heat ring, and at least one second image, from at least one second optical sensor, associated with the gapping measurement between the susceptor and the pre-heat ring.
4. The device of claim 1, wherein the at least one motor comprises a rotational motor associated with rotation of the susceptor.
5. The device of claim 1, wherein the controller is configured to determine a plurality of measurements, based on the input and associated with different points around the susceptor, to determine the spacing measurement, the gapping measurement, or the combination thereof.
6. The device of claim 1, wherein the controller is configured to determine a plurality of measurements, based on the input and associated with a same point of the susceptor, to determine the spacing measurement, the gapping measurement, or the combination thereof.
7. A method, comprising:
- determining at least one of a spacing measurement in a first dimension between a wafer on a susceptor and a pre-heat ring of a semiconductor processing tool, a gapping measurement in a second dimension between the wafer and the pre-heat ring, or a combination thereof, using one or more images captured in situ during a process by at least one optical sensor;
- generating a command based on a setting associated with the process being performed by the semiconductor processing tool and the spacing measurement, the gapping measurement, or the combination thereof; and
- providing the command to at least one motor to move the susceptor.
8. The method of claim 7, further comprising:
- determining at least one of an updated spacing measurement between the wafer and the pre-heat ring, an updated gapping measurement between the wafer and the pre-heat ring, or a combination thereof, using one or more additional images captured during the process by the at least one optical sensor;
- generating an additional command based on the setting and the updated spacing measurement, the updated gapping measurement, or the combination thereof; and
- providing the additional command to the at least one motor to move the susceptor.
9. The method of claim 7, further comprising:
- providing a command to a susceptor blade to load the wafer on the susceptor,
- wherein the spacing measurement, the gapping measurement, or the combination thereof is determined after the wafer is loaded.
10. The method of claim 9, further comprising:
- providing an additional command to the susceptor blade to unload the wafer from the susceptor after the process, performed on the wafer, is complete.
11. The method of claim 10, further comprising:
- providing a command to the susceptor blade to load an additional wafer on the susceptor;
- determining at least one of an updated spacing measurement between the additional wafer and the pre-heat ring, an updated gapping measurement between the additional wafer and the pre-heat ring, or a combination thereof, using one or more additional images captured by the at least one optical sensor, wherein the updated spacing measurement, the updated gapping measurement, or the combination thereof is determined after the additional wafer is loaded;
- generating an additional command based on the setting and the updated spacing measurement, the updated gapping measurement, or the combination thereof; and
- providing the additional command to the at least one motor to move the susceptor.
12. The method of claim 11, further comprising:
- providing an additional command to the susceptor blade to unload the additional wafer from the susceptor after the process, performed on the additional wafer, is complete.
13. The method of claim 7, further comprising:
- providing a command to the semiconductor processing tool to perform the process on the wafer loaded on the susceptor;
- determining at least one of an updated spacing measurement between the wafer and the pre-heat ring, an updated gapping measurement between the wafer and the pre-heat ring, or a combination thereof, using one or more additional images captured during the process by the at least one optical sensor;
- generating an additional command based on a setting associated with an additional process being performed by the semiconductor processing tool and the updated spacing measurement, the updated gapping measurement, or the combination thereof;
- providing the additional command to the at least one motor to move the susceptor during the additional process.
14. The method of claim 7, further comprising:
- providing a command to a rotational motor to rotate the susceptor during the process.
15. A method, comprising:
- loading a wafer having a plurality of recessed fins onto a susceptor;
- depositing doped material on the recessed fins using a semiconductor processing tool including the susceptor, wherein at least one of a spacing measurement in a first dimension between the wafer and a pre-heat ring of the semiconductor processing tool, a gapping measurement in a second dimension between the wafer and the pre-heat ring, or a combination thereof, is adjusted in situ during the deposition by at least one motor configured to move the susceptor;
- causing a first epitaxial growth on the doped material using the semiconductor processing tool, wherein at least one of an updated spacing measurement, an updated gapping measurement, or a combination thereof, is adjusted in situ during the first epitaxial growth by the at least one motor; and
- causing a second epitaxial growth on the doped material using the semiconductor processing tool, wherein at least one of a further updated spacing measurement, a further updated gapping measurement, or a combination thereof, is adjusted in situ during the second epitaxial growth by the at least one motor.
16. The method of claim 15, wherein the second epitaxial growth causes formation of merged source/drain regions across at least two of the recessed fins.
17. The method of claim 15, further comprising:
- rotating the susceptor during the deposition, the first epitaxial growth, and the second epitaxial growth.
18. The method of claim 17, wherein a rotation speed associated with one of the deposition, the first epitaxial growth, or the second epitaxial growth is different from a rotation speed associated with another of the deposition, the first epitaxial growth, or the second epitaxial growth.
19. The method of claim 15, wherein the at least one motor performs adjustments in situ based on input from at least one optical sensor.
20. The method of claim 15, further comprising:
- unloading the wafer from the susceptor after the second epitaxial growth.
Type: Application
Filed: Jan 10, 2022
Publication Date: May 11, 2023
Inventors: Yan-Chun LIU (Taichung City), Yii-Chi LIN (Taipei City), Shahaji B. MORE (Hsinchu City), Chih-Yu MA (Hsinchu City), Sheng-Jang LIU (Hsinchu County), Shih-Chieh CHANG (Taipei City), Ching-Lun LAI (Taichung City)
Application Number: 17/647,526