Phase-shift mask blank and process for the production thereof comprising a semi transparent film with silicon and nitrogen
PURPOSE: To provide the phase shift mask which can be produced while the generation of microdefects is suppressed with relatively simple stages and with which pattern transfer with a high resolution is possible and the phase shift mask blank which is the blank material thereof.CONSTITUTION: The mask patterns to be formed on a transparent substrate 1 of this phase shift mask are composed of light transparent parts 4 which allow the transmission of light of the intensity substantially contributing to exposing and light translucent parts 2 which allow the transmission of the light of the intensity substantially contributing to exposing. The phase shift mask is so formed that the phase of the light past the light translucent parts 2 and the phase of the light past the light transparent parts 4 are varied by shifting the phase of the light passing the light translucent parts 2, by which the light rays passing near the boundary parts of the light transparent parts 4 and the light translucent parts 2 are negated with each other and the contrast in the boundary parts is well maintained. The light translucent parts 2 are composed of thin films consisting of materials consisting of oxygen, molybdenum and silicide as main constituting elements.
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Claims
1. A phase-shift mask blank having a light semi-transmitting film which contains a transition metal, silicon and nitrogen as the main components on a transparent substrate,
- the light semi-transmitting film containing 5 to 70 at % of nitrogen and the light semi-transmitting film having a surface center-line average roughness of 0.1 to 10 nm Ra.
2. The phase-shift mask blank of claim 1, wherein the light semi-transmitting film contains 5 to 55 at % of the transition metal.
3. The phase-shift mask blank of claim 1, wherein the light semi-transmitting film contains 5 to 80 at % of silicon.
4. The phase-shift mask blank of claim 1, wherein the light semi-transmitting film has a transmittance of 4 to 20% to exposure light.
5. The phase-shift mask blank of claim 1, wherein the light semi-transmitting film has a sheet resistance of 50 to 5.times.10.sup.7.OMEGA./.quadrature..
6. The phase-shift mask blank of claim 1, wherein the transition metal is at least one selected from tungsten, tantalum, chromium or titanium.
7. A phase-shift mask having a mask pattern formed of a light-transmitting portion and a light semi-transmitting portion, obtained by a patterning treatment in which the light semi-transmitting film of the phase-shift mask blank recited in claim 1 is selectively removed in conformity with a predetermined pattern.
8. A method of transferring a pattern formed on a mask to a receptor by exposure, wherein the mask is the phase-shift mask recited in claim 7.
9. A phase-shift mask blank of claim 1 wherein not more than 1/2 of the total of silicon atoms which are contained in the light semi-transmitting film are forming silicide by directly bonding to the transition metal.
10. A phase-shift mask having a mask pattern formed of a light-transmitting portion and a light semi-transmitting portion, obtained by a patterning treatment in which the light semi-transmitting film of the phase-shift mask blank recited in claim 9 is selectively removed in conformity with a predetermined pattern.
11. A process for the production of a phase-shift mask blank having a light semi-transmitting film which contains a transition metal, silicon and nitrogen as the main components on a transparent substrate,
- the light semi-transmitting film containing 5 to 70 at % of nitrogen and the light semi-transmitting film having a surface center-line average roughness of 0.1 to 10 nm Ra which process comprises the step of sputtering with a transition metal and silicon being as a target while introducing a gas containing a nitrogen gas and/or a nitrogen compound gas, in the substantial absence of an oxygen gas and/or an oxygen compound gas into a sputtering apparatus, to form a light semi-transmitting film which at least contains a transition metal, silicon and nitrogen.
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Type: Grant
Filed: Mar 14, 1997
Date of Patent: Sep 21, 1999
Assignee: Hoya Corporation
Inventors: Hideaki Mitsui (Tokyo), Kenji Matsumoto (Tokyo), Yoichi Yamaguchi (Tokyo)
Primary Examiner: S. Rosasco
Law Firm: Nixon & Vanderhye
Application Number: 8/816,942
International Classification: G03F 900;
