Enhancing the width of polycrystalline grains with mask
A system, method and masking arrangement are provided of enhancing the width of polycrystalline grains produced using sequential lateral solidification using a modified mask pattern is disclosed. One exemplary mask pattern employs rows of diamond or circular shaped areas in order to control the width of the grain perpendicular to the direction of primary crystallization.
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This application is a continuation of U.S. application Ser. No. 11/373,773, filed Mar. 10, 2006 now U.S. Pat. No. 7,638,728, which is a continuation of International Application Serial No. PCT/US04/030326, filed Sep. 16, 2004, published Mar. 31, 2005, which claims priority from U.S. Provisional Application Ser. No. 60/503,437, filed Sep. 16, 2003, each of which are incorporated by reference in their entireties herein, and from which priority is claimed.
FIELD OF THE INVENTIONThe present invention relates to semiconductor processing techniques, and more particularly, techniques for fabricating semiconductors suitable for use as thin-film transistor (“TFT”) devices.
BACKGROUND INFORMATIONDuring the past several years, sequential lateral solidification (“SLS”) techniques have been developed to generate quality large grained polycrystalline thin films, e.g., silicon films, having a substantially uniform grain structure. For example, in U.S. Pat. No. 6,322,625, issued to Im and U.S. patent application Ser. No. 09/390,537 (the “'537 application”), the entire disclosures of which are incorporated herein by reference, particularly advantageous apparatus and methods for growing large grained polycrystalline or single crystal silicon structures using energy-controllable laser pulses and small-scale translation of a silicon sample to implement sequential lateral solidification have been described. As described in these patent documents, at least portions of the semiconductor film on a substrate are irradiated with a suitable radiation pulse to completely melt such portions of the film throughout their thickness.
In order to increase throughput, continuous motion SLS processes have been proposed. Referring to
As noted above, the aforementioned SLS techniques typically employ a straight slit mask pattern. This allows for the ease of control of the grain length (in the direction of the primary crystallization). In such case, the perpendicular grain spacing may be dependent on the properties of the film, and thus is not very easily manipulated. While the tailoring of the shaped areas to manipulate the microstructure has been employed in other SLS methods and systems, such as with the use of chevron-shaped openings in a mask, the techniques associated therewith may produce narrow grain areas. Accordingly, there is a need to control grain length in the thin film, as well as increase the area in which a smaller number of grains are present.
SUMMARY OF THE INVENTIONThe present invention overcomes the above-mentioned problems by providing a mask having a row of point-type areas (e.g., diamond and/or dot patterned opaque regions) provided thereon. Such mask pattern that uses closely spaced circular or diamond-shaped areas is utilized in lieu of the straight slits in at least a portion of the mask in order to produce a microstructure with wider grain areas. Using the mask of this configuration according to the present invention advantageously affects a melt interface curvature on the evolution of grain boundaries to favorably increase the perpendicular grain boundary spacing.
According to one exemplary embodiment of the present invention, a masking arrangement, system and process are provided for processing a thin film sample, e.g., an amorphous silicon thin film, into a polycrystalline thin film. In particular, a mask can be utilized which includes a first section having at least one opaque areas arranged in a first pattern, e.g., diamond areas, oval areas, and/or round areas. The first section may be configured to receive a beam pulse thereon, and produce a first modified pulse when the beam pulse is passed therethrough. The first modified pulse may include at least one first portion having a pattern that corresponds to the first pattern of the first section. When the first portion is irradiated on the sample, at least one first region of the sample is prevented from being completely melted throughout its thickness. The mask may also includes a second section associated with the first section, with the second section including a further area arranged in a second pattern. The second section may be configured to receive a further beam pulse thereon, and produce a second modified pulse when the further beam pulse is passed therethrough. The second modified pulse can include at least one second portion having a pattern that corresponds to the second pattern of the second section. When the second portion is irradiated on the sample, at least one second region of the sample irradiated by the second portion is completely melted throughout its thickness. In addition, when the first region is irradiated by the second modified pulse, the second portion of the second modified pulse completely melts the first region throughout its thickness.
The accompanying drawings, which are incorporated and constitute part of this disclosure, illustrate preferred embodiments of the invention and serve to explain the principles of the invention.
Throughout the FIGS., the same reference numerals and characters, unless otherwise stated, are used to denote like features, elements, components or portions of the illustrated embodiments. Moreover, while the present invention will now be described in detail with reference to the FIGS., it is done so in connection with the illustrative embodiments.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTSReferring to
Referring to
Referring to
Referring next to
Next, the shutter may be opened 1035 to expose the sample to a single pulse of irradiation through a masking arrangement including at least one of diamond shaped areas, oval shaped areas, and round shaped areas, and accordingly, to commence the sequential lateral solidification process. The sample may be translated in the horizontal direction 1040. The shutter is again opened 1045 exposing previously unmelted regions to a single pulse of irradiation. The process of sample translation and irradiation 1040, 1045 may be repeated 1060 to grow the polycrystalline region.
Next, if other regions on the sample have been designated for crystallization, the sample is repositioned 1065, 1066 and the crystallization process is repeated on the new region. If no further regions have been designated for crystallization, the laser is shut off 1070, the hardware is shut down 1075, and the process is completed 1080. Of course, if processing of additional samples is desired or if the present invention is utilized for batch processing, steps 1005, 1010, and 1035-1065 can be repeated on each sample.
The foregoing merely illustrates the principles of the invention. Various modifications and alterations to the described embodiments will be apparent to those skilled in the art in view of the teachings herein. It will thus be appreciated that those skilled in the art will be able to devise numerous systems and methods which, although not explicitly shown or described herein, embody the principles of the invention and are thus within the spirit and scope of the invention.
Claims
1. A masking arrangement for processing a thin film sample comprising:
- a first section which includes at least one opaque area arranged in a first pattern, the first section is configured to receive at least one beam pulse thereon, and produce at least one first modified pulse when the at least one beam pulse is passed therethrough, the at least one first modified pulse including at least one first portion having a pattern that corresponds to the first pattern of the first section, wherein, when the first portion is irradiated on the sample, at least one first region of the sample is prevented from being completely melted throughout its thickness; and
- a second section associated with the first section, the second section including a further area arranged in a second pattern, the second section being configured to receive at least one further beam pulse thereon, and produce at least one second modified pulse when the at least one further beam pulse is passed therethrough, the at least one second modified pulse including at least one second portion having a pattern that corresponds to the second pattern of the second section, wherein, when the second portion is irradiated on the sample, at least one second region of the sample irradiated by the second portion is completely melted throughout its thickness,
- wherein when the first region is irradiated by the at least one second modified pulse, the second portion of the at least one second modified pulse completely melts the at least one first region throughout its thickness.
2. The masking arrangement as in claim 1, wherein at least one of the first pattern and the second pattern comprises at least one of diamond areas, oval areas, dot areas and round areas.
3. The masking arrangement as in claim 1, wherein,
- the first pattern extends approximately along a first horizontal axis, the first pattern having a width measured along the vertical axis,
- a second area of the second section extends approximately along the first horizontal axis, the second section being configured to permit the at least one first region to be completely melted throughout its thickness by the second modified pulse, the second area being offset horizontally from the first pattern, the second area having a width measured in the vertical axis that is at least equal to the width of the first pattern, and
- the second pattern extends approximately along a second horizontal axis and vertically offset from the first horizontal axis, wherein the second pattern is configured to prevent at least one third region of the sample from being completely melted throughout its thickness.
4. A masking arrangement as in claim 3, wherein the first section includes
- at least one further opaque area arranged in a third pattern extending approximately along a third horizontal axis,
- wherein the third horizontal axis is vertically offset from the first horizontal axis,
- wherein the third pattern is substantially aligned vertically with the first pattern,
- wherein the third pattern is configured to prevent at least one fourth region of the sample from being completely melted throughout its thickness,
- wherein a position of the third horizontal axis is such that the second horizontal axis is between the first horizontal axis and the third horizontal axis.
5. The masking arrangement as in claim 4, wherein the third pattern comprises at least one of diamond areas, oval areas, dot areas and round areas.
6. The masking arrangement of claim 3, wherein the second horizontal axis extends approximately along a centerline in between the first and third horizontal axes.
7. The masking arrangement of claim 4, wherein,
- elements of the first pattern are approximately equidistant from other elements of the first pattern, and
- elements of the third pattern are approximately equidistant from other elements of the third pattern.
8. The mask arrangement of claim 1, wherein the second pattern comprises one or more substantially parallel lines.
9. A method for processing a thin film sample, comprising the steps of:
- providing at least one beam on a first section of a masking arrangement to produce at least one first modified pulse when the at least one beam is passed therethrough, the first section which includes at least one opaque area arranged in a first pattern, the at least one first modified pulse including at least one first portion having a pattern that corresponds to the first pattern, wherein, when the first portion is irradiated on the sample, at least one first region of the sample is prevented from being completely melted throughout its thickness;
- based on the dimensions of the masking arrangement, translating at least one of the thin film sample and the beam relative to the other one of the thin film sample and the beam; and
- providing at least one further beam on a second section of a masking arrangement to produce at least one second modified pulse when the at least one further beam is passed therethrough, the second section associated with the first section, the second section including a further area arranged in a second pattern, the at least one second modified pulse including at least one second portion having a pattern that corresponds to the second pattern, wherein, when the second portion is irradiated on the sample, at least one second region of the sample irradiated by the second portion is completely melted throughout its thickness; wherein, when the first region is irradiated by the at least one second modified pulse, the second portion of the at least one second modified pulse completely melts the at least one first region throughout its thickness.
10. The method of claim 9, wherein at least one of the first pattern and the second pattern comprises at least one of diamond areas, oval areas, dot areas and round areas.
11. The method of claim 9, wherein,
- the first pattern extends approximately along a first horizontal axis, the first pattern having a width measured along the vertical axis,
- a second area of the second section extends approximately along the first horizontal axis, the second section being configured to permit the at least one first region to be completely melted throughout its thickness by the at least one second modified pulse, the second area being offset horizontally from the first pattern, the second area having a width measured in the vertical axis that is at least equal to the width of the first pattern, and
- the second pattern extends approximately along a second horizontal axis and vertically offset from the first horizontal axis, wherein the second pattern is configured to prevent at least one third region of the sample from being completely melted throughout its thickness.
12. The method of claim 11, wherein the first section includes
- at least one further opaque area in a third pattern extending approximately along a third horizontal axis,
- wherein the third horizontal axis is vertically offset from the first horizontal axis,
- wherein the third pattern is substantially aligned vertically with the first pattern,
- wherein the third pattern is configured to prevent at least one fourth region of the sample from being completely melted throughout its thickness,
- wherein a position of the third horizontal axis is such that the second horizontal axis is between the first horizontal axis and the third horizontal axis.
13. The method of claim 12, wherein the third pattern comprises at least one of diamond areas, oval areas, dot areas and round areas.
14. The method of claim 11, wherein the second horizontal axis is approximately along a centerline in between the first and third horizontal axes.
15. The method of claim 12, wherein,
- elements of the first pattern are approximately equidistant from other elements of the first pattern, and
- elements of the third pattern are approximately equidistant from other elements of the third pattern.
16. The method of claim 9, wherein the second pattern comprises one or more substantially parallel lines.
17. A system for processing a thin film sample, comprising:
- a mask,
- a processor to activate a device to irradiate through the mask, the processor being configured to perform the steps of: providing at least one beam on a first section of a masking arrangement to produce at least one first modified pulse when the at least one beam is passed therethrough, the first section which includes at least one opaque area arranged in a first pattern, the at least one first modified pulse including at least one first portion having a pattern that corresponds to the first pattern, wherein, when the first portion is irradiated on the sample, at least one first region of the sample is prevented from being completely melted throughout its thickness, based on the dimensions of the masking arrangement, translating at least one of the thin film sample and the beam relative to the other one of the thin film sample and the beam, and providing at least one further beam on a second section of a masking arrangement to produce at least one second modified pulse when the at least one further beam is passed therethrough, the second section associated with the first section, the second section including a further area arranged in a second pattern, the at least one second modified pulse including at least one second portion having a pattern that corresponds to the second pattern, wherein, when the second portion is irradiated on the sample, at least one second region of the sample irradiated by the second portion is completely melted throughout its thickness; wherein, when the first region is irradiated by the at least one second modified pulse, the second portion of the at least one second modified pulse completely melts the at least one first region throughout its thickness.
18. The system of claim 17, wherein at least one of the first pattern and the second pattern comprises at least one of diamond areas, oval areas, dot areas and round areas.
19. The system of claim 17, wherein,
- the first pattern extends approximately along a first horizontal axis, the first pattern having a width measured along the vertical axis,
- a second area of the second section extends approximately along the first horizontal axis, the second section being configured to permit the at least one first region to be completely melted throughout its thickness by the at least one second modified pulse, the second area being offset horizontally from the first pattern, the second area having a width measured in the vertical axis that is at least equal to the width of the first pattern, and
- the second pattern extends approximately along a second horizontal axis and vertically offset from the first horizontal axis, wherein the second pattern is configured to prevent at least one third region of the sample from being completely melted throughout its thickness.
20. The system of claim 19, wherein the first section includes
- at least one further opaque area extending in a third pattern approximately along a third horizontal axis,
- wherein the third horizontal axis is vertically offset from the first horizontal axis,
- wherein the third pattern is substantially aligned vertically with the first pattern,
- wherein the third pattern is configured to prevent at least one fourth region of the sample from being completely melted throughout its thickness,
- wherein a position of the third horizontal axis is such that the second horizontal axis is between the first horizontal axis and the third horizontal axis.
21. The system of claim 20, wherein the third pattern comprises at least one of diamond areas, oval areas, dot areas and round areas.
22. The system of claim 20, wherein the second horizontal axis is approximately along a centerline in between the first and third horizontal axes.
23. The system of claim 22, wherein,
- elements of the first pattern are approximately equidistant from other elements of the first pattern, and
- elements of the third pattern are approximately equidistant from other elements of the third pattern.
24. The system of claim 19, wherein the second pattern comprises one or more substantially parallel lines.
3632205 | January 1972 | Marcy |
4234358 | November 18, 1980 | Celler et al. |
4309225 | January 5, 1982 | Fan et al. |
4382658 | May 10, 1983 | Shields et al. |
4456371 | June 26, 1984 | Lin |
4514895 | May 7, 1985 | Nishimura |
4639277 | January 27, 1987 | Hawkins |
4691983 | September 8, 1987 | Kobayashi et al. |
4727047 | February 23, 1988 | Bolzer et al. |
4758533 | July 19, 1988 | Magee et al. |
4793694 | December 27, 1988 | Liu |
4800179 | January 24, 1989 | Mukai |
4855014 | August 8, 1989 | Kakimoto et al. |
4870031 | September 26, 1989 | Suguhara et al. |
4940505 | July 10, 1990 | Schachameyer et al. |
4970546 | November 13, 1990 | Suzuki et al. |
4976809 | December 11, 1990 | Broadbent |
4977104 | December 11, 1990 | Sawada et al. |
5032233 | July 16, 1991 | Yu et al. |
5061655 | October 29, 1991 | Ipposhi et al. |
RE33836 | March 3, 1992 | Resor, III et al. |
5145808 | September 8, 1992 | Sameshima et al. |
5204659 | April 20, 1993 | Sarma |
5233207 | August 3, 1993 | Anzai |
5285236 | February 8, 1994 | Jain |
5291240 | March 1, 1994 | Jain |
5304357 | April 19, 1994 | Sato et al. |
5373803 | December 20, 1994 | Noguchi et al. |
5395481 | March 7, 1995 | McCarthy |
5409867 | April 25, 1995 | Asano |
5413958 | May 9, 1995 | Imahashi et al. |
5417897 | May 23, 1995 | Asakawa et al. |
5436095 | July 25, 1995 | Mizuno et al. |
5453594 | September 26, 1995 | Konecny |
5456763 | October 10, 1995 | Kaschmitter et al. |
5466908 | November 14, 1995 | Hosoya et al. |
5496768 | March 5, 1996 | Kudo |
5512494 | April 30, 1996 | Tanabe |
5523193 | June 4, 1996 | Nelson |
5529951 | June 25, 1996 | Noguchi et al. |
5534716 | July 9, 1996 | Takemura |
5591668 | January 7, 1997 | Maegawa et al. |
5614421 | March 25, 1997 | Yang |
5614426 | March 25, 1997 | Funada et al. |
5616506 | April 1, 1997 | Takemura |
5620910 | April 15, 1997 | Teramoto |
5683935 | November 4, 1997 | Miyamoto et al. |
5696388 | December 9, 1997 | Funada et al. |
5710050 | January 20, 1998 | Makita et al. |
5721606 | February 24, 1998 | Jain |
5736709 | April 7, 1998 | Neiheisel |
5742426 | April 21, 1998 | York |
5756364 | May 26, 1998 | Tanaka et al. |
5766989 | June 16, 1998 | Maegawa et al. |
5844588 | December 1, 1998 | Anderson |
5861991 | January 19, 1999 | Fork |
5893990 | April 13, 1999 | Tanaka |
5981974 | November 9, 1999 | Makita |
5986807 | November 16, 1999 | Fork |
6014944 | January 18, 2000 | Russell et al. |
6072631 | June 6, 2000 | Guenther et al. |
6081381 | June 27, 2000 | Shalapenok et al. |
6093934 | July 25, 2000 | Yamazaki et al. |
6117301 | September 12, 2000 | Freudenberger et al. |
6117752 | September 12, 2000 | Suzuki |
6120976 | September 19, 2000 | Treadwell et al. |
6130009 | October 10, 2000 | Smith et al. |
6130455 | October 10, 2000 | Yoshinouchi |
6156997 | December 5, 2000 | Yamazaki et al. |
6162711 | December 19, 2000 | Ma et al. |
6169014 | January 2, 2001 | McCulloch |
6172820 | January 9, 2001 | Kuwahara |
6177301 | January 23, 2001 | Jung |
6187088 | February 13, 2001 | Okumura |
6190985 | February 20, 2001 | Buynoski |
6193796 | February 27, 2001 | Yang |
6198141 | March 6, 2001 | Yamazaki et al. |
6203952 | March 20, 2001 | O'Brien et al. |
6222195 | April 24, 2001 | Yamada et al. |
6235614 | May 22, 2001 | Yang |
6242291 | June 5, 2001 | Kusumoto et al. |
6255146 | July 3, 2001 | Shimizu et al. |
6274488 | August 14, 2001 | Talwar et al. |
6285001 | September 4, 2001 | Fleming et al. |
6300175 | October 9, 2001 | Moon |
6313435 | November 6, 2001 | Shoemaker et al. |
6316338 | November 13, 2001 | Jung |
6320227 | November 20, 2001 | Lee et al. |
6322625 | November 27, 2001 | Im |
6326286 | December 4, 2001 | Park et al. |
6333232 | December 25, 2001 | Kunikiyo |
6341042 | January 22, 2002 | Matsunaka et al. |
6348990 | February 19, 2002 | Igasaki et al. |
6353218 | March 5, 2002 | Yamazaki et al. |
6358784 | March 19, 2002 | Zhang et al. |
6368945 | April 9, 2002 | Im |
6388146 | May 14, 2002 | Onishi et al. |
6388386 | May 14, 2002 | Kunii et al. |
6392810 | May 21, 2002 | Tanaka |
6393042 | May 21, 2002 | Tanaka |
6407012 | June 18, 2002 | Miyasaka et al. |
6410373 | June 25, 2002 | Chang et al. |
6429100 | August 6, 2002 | Yoneda |
6432758 | August 13, 2002 | Cheng et al. |
6444506 | September 3, 2002 | Kusumoto et al. |
6445359 | September 3, 2002 | Ho |
6448612 | September 10, 2002 | Miyazaki et al. |
6451631 | September 17, 2002 | Grigoropoulos et al. |
6455359 | September 24, 2002 | Yamazaki et al. |
6468845 | October 22, 2002 | Nakajima et al. |
6471772 | October 29, 2002 | Tanaka |
6472684 | October 29, 2002 | Yamazaki et al. |
6476447 | November 5, 2002 | Yamazaki et al. |
6482722 | November 19, 2002 | Kunii et al. |
6493042 | December 10, 2002 | Bozdagi et al. |
6495067 | December 17, 2002 | Ono |
6495405 | December 17, 2002 | Voutsas et al. |
6501095 | December 31, 2002 | Yamaguchi et al. |
6506636 | January 14, 2003 | Yamazaki et al. |
6511718 | January 28, 2003 | Paz de Araujo et al. |
6512634 | January 28, 2003 | Tanaka |
6516009 | February 4, 2003 | Tanaka |
6521473 | February 18, 2003 | Jung |
6521492 | February 18, 2003 | Miyasaka et al. |
6526585 | March 4, 2003 | Hill |
6528359 | March 4, 2003 | Kusumoto et al. |
6535535 | March 18, 2003 | Yamazaki et al. |
6555449 | April 29, 2003 | Im et al. |
6562701 | May 13, 2003 | Ishida et al. |
6563077 | May 13, 2003 | Im |
6573163 | June 3, 2003 | Voutsas et al. |
6573531 | June 3, 2003 | Im et al. |
6577380 | June 10, 2003 | Farmiga et al. |
6582827 | June 24, 2003 | Im |
6590228 | July 8, 2003 | Voutsas et al. |
6599790 | July 29, 2003 | Yamazaki et al. |
6608326 | August 19, 2003 | Shinagawa et al. |
6621044 | September 16, 2003 | Jain et al. |
6635554 | October 21, 2003 | Im et al. |
6635932 | October 21, 2003 | Grigoropoulos et al. |
6660575 | December 9, 2003 | Zhang |
6667198 | December 23, 2003 | Shimoto et al. |
6693258 | February 17, 2004 | Sugano et al. |
6734635 | May 11, 2004 | Kunii et al. |
6744069 | June 1, 2004 | Yamazaki et al. |
6746942 | June 8, 2004 | Sato et al. |
6767804 | July 27, 2004 | Crowder |
6770545 | August 3, 2004 | Yang |
6777276 | August 17, 2004 | Crowder et al. |
6784455 | August 31, 2004 | Maekawa et al. |
6830993 | December 14, 2004 | Im et al. |
6858477 | February 22, 2005 | Deane et al. |
6908835 | June 21, 2005 | Sposili et al. |
6961117 | November 1, 2005 | Im |
7029996 | April 18, 2006 | Im et al. |
7049184 | May 23, 2006 | Tanabe |
7091411 | August 15, 2006 | Falk et al. |
7187016 | March 6, 2007 | Arima |
7192479 | March 20, 2007 | Mitani et al. |
7217605 | May 15, 2007 | Kawasaki et al. |
7259081 | August 21, 2007 | Im |
7297982 | November 20, 2007 | Suzuki et al. |
7300858 | November 27, 2007 | Im |
7311778 | December 25, 2007 | Im et al. |
7319056 | January 15, 2008 | Im et al. |
7341928 | March 11, 2008 | Im |
7638728 | December 29, 2009 | Im |
7679028 | March 16, 2010 | Im et al. |
7804647 | September 28, 2010 | Mitani et al. |
20010001745 | May 24, 2001 | Im et al. |
20010041426 | November 15, 2001 | Im |
20020083557 | July 4, 2002 | Jung |
20020096680 | July 25, 2002 | Sugano et al. |
20020104750 | August 8, 2002 | Ito |
20020119609 | August 29, 2002 | Hatano et al. |
20020151115 | October 17, 2002 | Nakajima et al. |
20030000455 | January 2, 2003 | Voutsas |
20030003242 | January 2, 2003 | Voutsas |
20030006221 | January 9, 2003 | Hong et al. |
20030013278 | January 16, 2003 | Jang et al. |
20030014337 | January 16, 2003 | Mathews et al. |
20030029212 | February 13, 2003 | Im |
20030068836 | April 10, 2003 | Hongo et al. |
20030088848 | May 8, 2003 | Crowder |
20030089907 | May 15, 2003 | Yamaguchi et al. |
20030096489 | May 22, 2003 | Im et al. |
20030119286 | June 26, 2003 | Im et al. |
20030148565 | August 7, 2003 | Yamanaka |
20030194613 | October 16, 2003 | Voutsas et al. |
20030196589 | October 23, 2003 | Mitani et al. |
20040053450 | March 18, 2004 | Sposili et al. |
20040061843 | April 1, 2004 | Im |
20040127066 | July 1, 2004 | Jung |
20040140470 | July 22, 2004 | Kawasaki et al. |
20040169176 | September 2, 2004 | Peterson et al. |
20040182838 | September 23, 2004 | Das et al. |
20040222187 | November 11, 2004 | Lin |
20040224487 | November 11, 2004 | Yang |
20050032249 | February 10, 2005 | Im et al. |
20050034653 | February 17, 2005 | Im et al. |
20050059265 | March 17, 2005 | Im |
20050141580 | June 30, 2005 | Partlo et al. |
20050142450 | June 30, 2005 | Jung |
20050142451 | June 30, 2005 | You |
20050202654 | September 15, 2005 | Im |
20060030164 | February 9, 2006 | Im |
20060102901 | May 18, 2006 | Im et al. |
20060125741 | June 15, 2006 | Tanaka et al. |
20060211183 | September 21, 2006 | Duan et al. |
20060254500 | November 16, 2006 | Im et al. |
20070007242 | January 11, 2007 | Im |
20070020942 | January 25, 2007 | Im |
20070032096 | February 8, 2007 | Im |
20070108472 | May 17, 2007 | Jeong et al. |
20070111349 | May 17, 2007 | Im |
20070215942 | September 20, 2007 | Chen et al. |
19839718 | March 2000 | DE |
10103670 | August 2002 | DE |
681316 | August 1995 | EP |
655774 | July 1996 | EP |
1067593 | October 2001 | EP |
04/030328 | September 2004 | EP |
2338342 | December 1999 | GB |
2338343 | December 1999 | GB |
2338597 | December 1999 | GB |
62181419 | August 1987 | JP |
2283036 | November 1990 | JP |
04033327 | February 1992 | JP |
4279064 | October 1992 | JP |
6252048 | September 1994 | JP |
6283422 | October 1994 | JP |
7176757 | July 1995 | JP |
11064883 | March 1999 | JP |
11281997 | October 1999 | JP |
2001023920 | January 2001 | JP |
523723/2003 | August 2005 | JP |
9745827 | December 1997 | WO |
9824118 | June 1998 | WO |
9931719 | June 1999 | WO |
0014784 | March 2000 | WO |
0118854 | March 2001 | WO |
0118855 | March 2001 | WO |
0171786 | September 2001 | WO |
WO0171791 | September 2001 | WO |
0231869 | April 2002 | WO |
02/42847 | May 2002 | WO |
0242847 | May 2002 | WO |
0286954 | May 2002 | WO |
02086955 | October 2002 | WO |
03/018882 | March 2003 | WO |
03018882 | March 2003 | WO |
03046965 | June 2003 | WO |
03084688 | October 2003 | WO |
2004/017382 | February 2004 | WO |
2004017379 | February 2004 | WO |
2004017380 | February 2004 | WO |
2004017381 | February 2004 | WO |
2004017382 | February 2004 | WO |
2004075263 | September 2004 | WO |
2004/075263 | January 2005 | WO |
2005/029548 | March 2005 | WO |
2005/029549 | March 2005 | WO |
WO2005029546 | March 2005 | WO |
WO2005029548 | March 2005 | WO |
WO2005029550 | March 2005 | WO |
WO2005029551 | March 2005 | WO |
- U.S. Appl. No. 60/253,256, filed Aug. 31, 2003, Im.
- Im et al., “Controlled Super-Lateral Growth of Si Films for Microstructural Manipulation and Optimization”, Phys. Stat. Sol. (a), vol. 166, p. 603 (1998).
- S.D. Brotherton et al., “Influence of Melt Depth in Laser Crystallized Poly-Si Thin Film Transistors,” 82 J. Appl. Phys. 4086 (1997).
- J.S. Im et al., “Crystalline Si Films for Integrated Active-Matrix Liquid-Crystals Displays,” 21 MRS Bulletin 39 (1996).
- Im et al., “Single-Crystal Si Films for Thin-Film Transistor Devices,” Appl. Phys. Lett., vol. 70 (25), p. 3434 (1997).
- Sposili et al., “Sequential Lateral Solidification of Thin Silicon Films on SiO2”, Appl, Phys. Lett., vol. 69 (19), p. 2864 (1996).
- Crowder et al., “Low-Temperature Single-Crystal Si TFT's Fabricated on Si Films processed via Sequential Lateral Solidification”, IEEE Electron Device Letter, vol. 19 (8), p. 306 (1998).
- Sposili et al., “Single-Crystal Si Films via a Low-Substrate-Temperature Excimer-Laser Crystallization Method”, Mat. Res. Soc. Symp. Proc. vol. 452, pp. 953-958, 1997 Materials Reasearch Society.
- C. E. Nebel, “Laser Interference Structuring of A-SI:h” Amorphous Silicon Technology—1996, San Francisco, CA Apr. 8-12, 1996, Materials Research Society Symposium Proceedings, vol. 420, Pittsburgh, PA.
- J. H. Jeon et al., “Two-step laser recrystallization of poly-Si for effective control of grain boundaries”, Journal of Non Crystalline Solids, North-Holland Publishing Company, NL, vol. 266-269, May 2000, pp. 645-649.
- H. Endert et al., “Excimer Laser: A New Tool for Precision Micromaching,” 27 Optical and Quantum Electronics, 1319 (1995).
- “Overview of Beam Delivery Systems for Excimer Lasers,” Micro/Las Lasersystem GMBH, 1999.
- K.H. Weiner et al., “Ultrashallow Junction Formation Using Projection Gas Immersion Laser Doping (PGILD),” A Verdant Technologies Technical Brief, Aug. 20, 1997.
- Hau-Riege C.S. et al., “The Effects Microstructural Transitions at Width Transitions on interconnect reliabity,” Journal of Applied Physics, Jun. 15, 2000, vol. 87, No. 12, pp. 8467-8472.
- McWilliams et al., “Wafer-Scale Laser Pantography: Fabrication of N-Metal-Oxide-Semiconductor Transistors and Small-Scale Integrated Circuits by Direct-Write Laser-Induced Pyrolytic Reactions,” Applied Physics Letters, American Institute of Physics, New York, US, vol. 43, No. 10, Nov. 1983, pp. 946-948.
- Mariucci et al., “Grain boundary location control by patterned metal film in excimer laser crystallized polysilicon,” Proceedings of the Figth International COnference on Polycrystalline Semiconductors, Schwabisch Gmund, Germany, Sep. 13-18, 1998, vol. 67-68, pp. 175-180.
- Broadbent et al., “Excimer Laser Processing of Al-1%Cu/TiW Interconnect Layers,” 1989 Proceedings, Sixth International IEEE VLSI Multilevel Interconnection COnference, Santa Clara, CA, Jun. 12-13, 1989, pp. 336-345.
- H.J. Kim and James S. Im, “Grain Boundary Location-Controlled Poly-Si Films for TFT Devices Obtained Via Novel Excimer Laser Process,” Abstracts for Symposium of Materials Research Society, Nov. 27 to Dec. 2, 1994, p. 230.
- S.D. Brotherton, “Polycrystalline Silicon Thin Film Transistors,” 10 Semicond. Sci. Tech., pp. 721-738 (1995).
- H. Watanabe et al., “Crystallization Process of Polycrystalline Silicon by KrF Excimer Laser Annealing,” 33 Japanese J. of Applied Physics Part 1—Regular Papers Short Notes & Review Papers, pp. 4491-4498 (1994).
- E. Fogarassy et al., “Pulsed Laser Crystallization of Hydrogen-Free a-Si Thin Films for High-Mobility Poly-Si TFT Fabrication,” 56 Applied Physics A—Solids and Surfaces, pp. 365-373 (1993).
- Y. Miyata et al, “Low-Temperature Polycrystalline Silicon Thin-Film Transistors for Large-Area Liquid Crystal Display,” 31 Japanese J. of Applied Physics Part 1—Regular Papers Short Notes & Review Papers, pp. 4559-4562 (1992).
- Im et al., “Phase Transformation Mechanisms Involved in Excimer Laser Crystallization of Amorphous Silicon Films,” Appl. Phys. Lett., vol. 63 (14), p. 1969 (1993).
- Im et al., “On the Super Lateral Growth Phenomenon Observed in Excimer Laser-Induced Crystallization of Thin Si Films,” Appl. Phys. Lett., vol. 64 (17), p. 2303 (1994).
- Brochure from MicroLas Lasersystem, GmbH, “UV Optics Systems for Excimer Laser Based Micromaching and Marking”. 1999.
- Ishida et al., “Ultra-shallow boxlike profiles fabricated by pulsed ultraviolet-laser doping process”, J. Vac. Sci. Technol. B 12(1), p. 399-403, 1994. (No month).
- Yoshimoto, et al., “Excimer-Laser-Produced and Two-Dimensionally Position-Controlled Giant Si Grains on Organic SOG Underlayer”, p. 285-286, AM-LCD 2000. No month.
- Ozawa et al., “Two-Dimensionally Position-Controlled Exicer-Laser-Crystallization of Silicon Thin Films on Glassy Substrate”, Jpn. J. Appl. Phys. vol. 38, Part 1, No. 10, p. 5700-5705, (1999). No month.
- I.W. Boyd, Laser Processing of Thin Films and Microstructures, Oxidation, Deposition, and Etching of Insulators (Springer—Verlag Berlin Heidelber 1987).
- N. Yamamuchi and R. Reif, Journal of Applied Physics, “Polycrystalline silicon thin films processed with silicon ion implantation and subsequent solid-phase crystallization: Theory, experiments, and thin-film transistor applications”—Apr. 1, 1994—vol. 75, Issue 7, pp. 3235-3257.
- T. Noguchi, “Appearance of Single-Crystalline Properties in Fine-Patterned Si Thin Film Transistors (TFTs) by Solid Phase Crystallization (SPC),” Jpn. J. Appl. Phys. vol. 32 (1993) L1584-L1587.
- Ishihara et al., “A Novel Double-Pulse Exicem-Laser Crystallization Method of Silicon Thin-Films,” Japanese Journal of Applied Physics, Publication Office Japanese Journal of Applied Physics, Tokyo, Japan, vol. 34, No. 8A, Aug. 1995, pp. 3976-3981.
- Kim, H. J., “Excimer-Laser-Induced Crystallization of Amorophus Silicon Thin Films”, Ph. D. Dissertation Abstract, Columbia University, 1996.
- Bergmann, R. et al., Nucleation and Growth of Crystalline Silicon Films on Glass for Solar Cells, Phys. Stat. Sol., 1998, pp. 587-602, vol. 166, Germany.
- Biegelsen, D.K., L.E. Fennell and J.C. Zesch, Origin of oriented crystal growth of radiantly melted silicon on SiO/sub 2, Appl. Phys. Lett. 45, 546 (1984).
- Boyd, Laser Processing of Thin Films and Microstructures, Oxidation, Deposition, and Etching of Insulators (Springer—Verlag Berlin Heidelber 1987).
- Brotherton, S.D., et al., Characterisation of poly-Si TFTs in Directionally Solidified SLS Si, Asia Display/IDS'01, p. 387-390.
- Crowder et al., “Parametric investigation of SLS-processed poly-silicon thin films for TFT application,” Preparations and Characterization, Elsevier, Sequoia, NL, vol. 427, No. 1-2, Mar. 3, 2003, pp. 101-107, XP004417451.
- Crowder et al., “Sequential Lateral Solidification of PECVD and Sputter Deposited a-Si Films”, Mat. Res. Soc. Symp. Proc. 621:Q.9.7.1-9.7.6, 2000.
- Dassow, R. et al. Laser-Crystallized Polycrystalline Silicon on Glass for Photovoltaic Applications, Solid State Phenomena, pp. 193-198, vols. 67-68, Scitec Publications, Switzerland.
- Dassow, R. et al. Nd:YVO4 Laser Crystallization for Thin Film Transistors with a High Mobility, Mat. Res. Soc. Symp. Proc., 2000, Q9.3.1-Q9.3.6, vol. 621, Materials Research Society.
- Dassow, R. et al., Laser crystallization of silicon for high-performance thin-film transistors, Semicond. Sci. Technol., 2000, pp. L31-L34, vol. 15, UK.
- Dimitriadis, C.A., J. Stoemenos, P.A. Coxon, S. Friligkos, J. Antonopoulos and N.A. Economou, Effect of pressure on the growth of crystallites of low-pressure chemical-vapor-deposited polycrystalline silicon films and the effective electron mobility under high normal field in thin-film transistors, J. Appl. Phys. 73, 8402 (1993).
- Geis et al., “Crystallographic orientation of silicon on an amorphous substrate using an artificial surface-relief grating and laser crystallization,” Appl. Phys. Lett. 35(1) Jul. 1, 1979, 71-74.
- Geis et al., “Silicon graphoepitaxy using a strip-heater oven,” Appl. Phys. Lett. 37(5), Sep. 1, 1980, 454-456.
- Geis et al., “Zone-Melting recrystallization of SI Films with a moveable-strip heater oven” J. Electro-Chem. Soc., 129: 2812 (1982).
- Gupta et al., “Numerical Analysis of Excimer-laser induced melting and solidification of Si Thin Films”, Applied Phys. Lett., 71:99, 1997.
- Hau-Reige et al., “Microstructural Evolution Induced By Scanned Laser Annealing in Al Interconnects,” Appl. Phys. Lett., vol. 75, No. 10, p. 1464-1466, 1999.
- Hawkins, W.G. et al., “Origin of lamellae in radiatively melted silicon films,” appl. Phys. Lett. 42(4), Feb. 15, 1983.
- Hayzelden, C. and J.L. Batstone, Silicide formation and silicide-mediated crystallization of nickel-implanted amorphous silicon thin films, J. Appl. Phys. 73, 8279 (1993).
- Im, J.S., Method and system for producing crystalline thin films with a uniform crystalline orientation, U.S. Appl. No. 60/503,419; ref. file # 36013(BB); Columbia ref. M02-063.
- Jung, Y.H., et al., Low Temperature Polycrystalline Si TFTs Fabricated with Directionally Crystallized Si Film, Mat. Res. Soc. Symp. Proc. vol. 621, Z8.3.1-6, 2000.
- Jung, Y.H., et al., The Dependence of Poly-Si TFT Characteristics on the Relative Misorientation Between Grain Boundaries and the Active Channel, Mat. Res. Soc. Symp. Proc. vol. 621, Q9.14.1-6, 2000.
- Kahlert, H., “Creating Crystals”, OE Magazine, Nov. 2001, 33-35.
- Kim, C. et al., Development of SLS-Based SOG Display, IDMC 2005, Thu-15-02, 252-255.
- Kim, H. J. et al., “Excimer Laser Induced Crystallization of Thin Amorphous Si Films on SiO2: Implications of Crystallized Microstructures for Phase Transformation Mechanisms,” Mat. Res. Soc. Symp. Proc., vol. 283, 1993.
- Kim, H.J. et al., “New Excimer-laser-crystallization method for producing large-grained and grain boundary-location-controlled Si Films for Thin Film Transistors”, Applied Phys. Lett., 68: 1513.
- Kim, H.J. et al., “Multiple Pulse Irradiation Effects in Excimer Laser-Induced Crystallization of Amorphous Si Films,” Mat. Res. Soc. Sym. Proc., 321:665-670 (1994).
- Kim, H.-J., et al., “The effects of dopants on surface-energy-driven secondary grain growth in silicon films,” J. Appl. Phys. 67 (2), Jan. 15, 1990.
- Kimura, M. and K. Egami, Influence of as-deposited film structure on (100) texture in laser-recrystallized silicon on fused quartz, Appl. Phys. Lett. 44, 420 (1984).
- Knowles, D.S. et al., “P-59: Thin Beam Crystallization Method: a New Laser Annealing Tool with Lower Cost and Higher Yield for LTPS Panels,” SID 00 Digest, pp. 1-3 , 2005.
- Kohler, J.R. et al., Large-grained polycrystalline silicon on glass by copper vapor laser annealing. Thin Solid Films, 1999, pp. 129-132, vol. 337, Elsevier.
- Kung, K.T.Y. and R. Reif, Implant-dose dependence of grain size and (110) texture enhancements in polycrystalline Si films by seed selection through ion channeling, J. Appl. Phys. 59, 2422 (1986).
- Kung, K.T.Y., R.B. Iverson and R. Reif, Seed selection through ion channeling to modify crystallographic orientations of polycrystalline Si films on SiO/sub 2/:Implant angle dependence, Appl. Phys. Lett. 46, 683 (1985).
- Kuriyama, H., T. Nohda, S. Ishida, T. Kuwahara, S. Noguchi, S. Kiyama, S. Tsuda and S. Nakano, Lateral grain growth of poly-Si films with a specific orientation by an excimer laser annealing method, Jpn. J. Appl. Phys. 32, 6190 (1993).
- Kuriyama, H., T. Nohda, Y. Aya, T. Kuwahara, K. Wakisaka, S. Kiyama and S. Tsuda, Comprehensive study of lateral grain growth in poly-Si films by excimer laser annealing and its application to thin film transistors, Jpn. J. Appl. Phys. 33, 5657 (1994).
- Lee, S.-W. and S.-K. Joo, Low temperature poly-Si thin-film transistor fabrication by metal-induced lateral crystallization, IEEE Electron Device Letters 17, 160 (1996).
- Lee, S.-W., Y.-C. Jeon and S.-K. Joo, Pd induced lateral crystallization of amorphous Si thin films, Appl. Phys. Lett. 66, 1671 (1995).
- Leonard, J.P. et al, “Stochastic modeling of solid nucleation in supercooled liquids”, Appl. Phys. Lett. 78:22, May 28, 2001, 3454-3456.
- Limanov, A. et al., Single-Axis Projection Scheme for Conducting Sequential Lateral Solidification of Si Films for Large-Area Electronics, Mat. Res. Soc. Symp. Proc., 2001, D10.1.1-D10.1.7, vol. 685E, Materials Research Society.
- Limanov, A. et al., The Study of Silicon Films Obtained by Sequential Lateral Solidification by Means of a 3-k-Hz Excimer Laser with a Sheetlike Beam, Russian Microelectronics, 1999, pp. 30-39, vol. 28, No. 1, Russia.
- Limanov, A.B., et al., Development of Linear Sequential Lateral Solidification Technique to Fabricate Quasi-Single-Cyrstal Super-thin Si Films for High-Performance Thin Film Transistor Devices, Perspectives, Science, and Technologies for Novel Silicon on.
- Mariucci et al., “Advanced excimer laser crystallization techniques,” Thin Solid Films, vol. 338, pp. 39-44, 2001.
- Micro/Las Lasersystem, GmbH, “UV Optics Systems for Excimer Laser Based Micromaching and Marking” (1999).
- Miyasaka, M., K. Makihira, T. Asano, E. Polychroniadis and J. Stoemenos, In situ observation of nickel metal-induced lateral crystallization of amorphous silicon thin films, Appl. Phys. Lett. 80, 944 (2002).
- Nerding, M., S. Christiansen, R. Dassow, K. Taretto, J.R. Kohler and H.P. Strunk, Tailoring texture in laser crystallization of silicon thin-films on glass, Solid State Phenom. 93, 173 (2003).
- Sato et al., “Mobility anisotropy of electrons in inversion layers on oxidized silicon surfaces” Physical Review B (State State) 4, 1950 (1971).
- Smith, H.I. et al., “The Mechanism of Orientation in Si Graphoepitaxy by Laser or Strip Heater Recrystallization,” J. Electrochem. Soc.: Solid-State Science and Technology, Taiwan FPD, Jun. 11, 2005, pp. 1-12.
- Song et al., “Single Crystal Si Islands on SiO2 Obtained Via Excimer Laser Irradiation of a Patterned Si Film”, Applied Phys. Lett., 68:3165, 1996.
- Sposili et al., “Line-scan sequential lateral solidification of Si thin films”, Appl. Phys. A67, 273-6, 1998.
- Thompson, C.V. and H.I. Smith, Surface-energy-driven secondary grain growth in ultrathin (<100 nm) films of silicon, Appl. Phys. Lett. 44, 603 (1984).
- van der Wilt, “The Commercialization of the SLS Technology,” Taiwan FPD, Jun. 11, 2004, pp. 1-12.
- Van Der Wilt, P.C., “State-of-the-Art Laser Crystallization of Si for Flat Panel Displays,” PhAST, May 18, 2004, pp. 1-34.
- Van Der Wilt, P.C., “Textured poly-Si films for hybrid SLS,” Jul. 2004, pp. 1-5.
- Voutsas, A. T., “Assessment of the Performance of Laser-Based Lateral-Crystallization Technology via Analysis and Modeling of Polysilicon Thin-Film-Transistor Mobility,” IEEE Transactions on Electronic Devices, vol. 50, No. 6, Jun. 2003.
- Voutsas, A.T., A new era of crystallization: advances in polysilicon crystallization and crystal engineering, Applied Surface Science 250-262, 2003.
- Voutsas, A.T., et al., Effect of process parameters on the structural characteristics of laterally grown, laser-annealed polycrystalline silicon films, Journal of Applied Physics, vol. 94, No. 12, p. 7445-7452, Dec. 15, 2003.
- Weiner, K. H. et al. “Laser-assisted, Self-aligned Silicide Formation,” A Verdant Technologies technical brief, Aug. 7, 1997, 1-9.
- Werner, J.H., et al. From polycrystalline to single crystalline silicon on glass, Thin Solid Films 383, 95-100, 2001.
- White et al., “Characterization of thin-oxide MNOS memory transistors” IEEE Trans. Electron Devices ED-19, 1280 (1972).
- U.S. Appl. No. 10/308,958 (Abandoned), filed Dec. 3, 2002.
- U.S. Appl. No. 12/402,208, filed Mar. 11, 2009.
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Type: Grant
Filed: Dec 22, 2009
Date of Patent: Nov 22, 2011
Patent Publication Number: 20100099273
Assignee: The Trustees of Columbia in the City of New York (New York, NY)
Inventor: James S. Im (New York, NY)
Primary Examiner: Samuel M Heinrich
Attorney: Baker Botts L.L.P.
Application Number: 12/644,273
International Classification: H01L 21/84 (20060101); H01L 29/04 (20060101);