Multicolor detectors and applications thereof
In one aspect, the present invention provides photodetectors and components thereof having multi-spectral sensing capabilities. In some embodiments, photodetectors of the present invention provide a first photosensitive element comprising at least one accessway extending through the element and an electrical connection at least partially disposed in the accessway, the electrical connection accessible for receiving a second photosensitive element.
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The present application is a continuation of U.S. patent application Ser. No. 12/489,871, entitled “Multicolor Detectors And Applications Thereof”, filed on Jun. 23, 2009, the entirety of which is incorporated herein by reference.
FIELD OF THE INVENTIONThe present invention relates to photodetectors and, in particular, to photodetectors responsive to radiation of more than one wavelength band.
BACKGROUND OF THE INVENTIONPhotonic sensing apparatus can derive significant benefits from the ability to provide a response over more than a single range of wavelengths. In recognition of this, several constructions have been proposed to provide photonic sensing apparatus multi-spectral functionality.
In one construction, photosensitive layers having divergent radiation absorption profiles are presented in a stacked configuration to provide multi-spectral functionality, wherein photosensitive layers absorbing shorter wavelengths of radiation are positioned over photosensitive layers absorbing longer wavelengths of radiation to avoid potential attenuation and interference of short wavelength radiation by long wavelength photosensitive materials. Long wavelength photosensitive materials, for example, can absorb and/or scatter radiation of shorter wavelengths, thereby providing significant attenuation or even precluding such radiation from reaching a short wavelength photosensitive layer.
Restriction to short wavelength photosensitive layers disposed over long wavelength photosensitive layers in a stacked photodetector configuration presents several disadvantages. One disadvantage is degradation of long wavelength photosensitive materials and structures resulting from the processing required for the subsequent deposition of one or more short wavelength photosensitive materials.
Another disadvantage is the inability to thermally isolate long wavelength photosensitive layers in prior stacked configurations. Materials absorbing long wavelength electromagnetic radiation are often sensitive to thermal fluctuations and can suffer significant signal to noise (S/N) degradation resulting from dark currents in response to such thermal fluctuations. As a result, long wavelength photosensitive layers often require thermal isolation in order to provide the desired response.
As an alternative to photosensitive layers presented in a stacked configuration, Photo detector constructions based on a plurality focal plane arrays have been proposed. In such constructions, each focal plane array is sensitive to radiation of a different spectral region. Optical assemblies are used to direct and distribute light received by the detector to the plurality of focal plane arrays. The various complexities of the optical assemblies used in directing the received light, nevertheless, are a significant disadvantage of multiple focal plane constructions.
A similar disadvantage is encountered in the use of segmented focal plane arrays wherein each segment of the array is sensitive to electromagnetic radiation of a different spectral region. As with multiple focal plane array constructions, use of segmented focal plane arrays usually requires complex optical assemblies to ensure the correct distribution of received light over the segmented array.
SUMMARYIn one aspect, the present invention provides photodetectors and components thereof having multi-spectral sensing capabilities. In some embodiments, photodetectors of the present invention can overcome disadvantages associated with prior detectors discussed herein.
The present invention, in some embodiments, provides a photodetector comprising a first photosensitive element coupled to a read-out integrated circuit, the first photosensitive element having an architecture operable for receiving a second photosensitive element and electrically connecting the second photosensitive element to the read-out integrated circuit. In some embodiments, for example, the first photosensitive element coupled to the read-out integrated circuit comprises an architecture facilitating the construction or processing of a second photosensitive element over the first photosensitive element resulting in a stacked configuration. In some embodiments, for example, the architecture of the first photosensitive element coupled to the read-out integrated circuit permits the construction or deposition of delicate long wavelength photosensitive structures over the first photosensitive element in the production of a photodetector having multi-spectral sensing capabilities.
In one embodiment, the present invention provides a photodetector comprising a first photosensitive element comprising one or more electrical contacts for coupling to a read-out integrated circuit and at least one access way extending through the element and an electrical connection at least partially disposed in the access way, the electrical connection accessible for receiving a second photosensitive element. As provided herein, the accessible electrical connection, in some embodiments, permits electrical communication of a second photosensitive element with the read-out integrated circuit, the second photosensitive element being deposited, constructed or hybridized over the first photosensitive element in a stacked configuration. In some embodiments, the first photosensitive element comprises a plurality of access ways, each access way having an electrical connection at least partially disposed therein and accessible for receiving a second photosensitive element.
Moreover, in some embodiments, the second photosensitive element of a photodetector of the present invention comprises an access way extending through the element and an electrical connection at least partially disposed in the access way, the electrical connection accessible for receiving a third photosensitive element. The electrical connection of the second photosensitive element, in some embodiments, facilitates electrical communication of a third photosensitive element with the read-out integrated circuit, the third photosensitive element being deposited, constructed or hybridized over the second photosensitive element in a stacked configuration. In some embodiments, the second photosensitive element comprises a plurality of access ways, each access way having an electrical connection at least partially disposed therein and accessible for receiving a third photosensitive element.
In another embodiment, the present invention provides one or more arrays of Photo detectors coupled to a read-out integrated circuit wafer, wherein at least one of the Photo detectors comprises a first photosensitive element electrically connected to the read-out integrated circuit wafer, the first photosensitive element having an access way extending through the element and an electrical connection at least partially disposed in the access way for receiving a second photosensitive element.
The photosensitive elements of photodetectors of the present invention can have any desired absorption spectra. In some embodiments, the electromagnetic radiation absorption spectra of the photosensitive elements do not overlap. In one embodiment, for example, the absorption spectra of the first and second photosensitive elements do not overlap. In other embodiments, the electromagnetic radiation absorption spectra of photosensitive elements partially overlap.
In some embodiments, the second photosensitive element absorbs radiation of a longer wavelength than the first photosensitive element. The second photosensitive element, in some embodiments, for example, absorbs electromagnetic radiation having a wavelength ranging from about 3 μm to about 5 μm, corresponding to mid-wavelength infrared (MWIR) radiation while the first photosensitive element absorbs electromagnetic radiation having a wavelength ranging from about 0.8 μm to about 2.8 μm corresponding to visible and short-wavelength infrared radiation (SWIR). In another embodiment, the second photosensitive element absorbs electromagnetic radiation having a wavelength ranging from about 8 μm to about 15 μm, corresponding to long-wavelength infrared (LWIR) radiation while the first photosensitive element absorbs SWIR or MWIR. In some embodiments, the second photosensitive element absorbs infrared radiation while the first photosensitive element absorbs visible radiation. In another embodiment, the second photosensitive element absorbs visible radiation while the first photosensitive element absorbs ultraviolet radiation. Alternatively, in some embodiments, the first photosensitive element absorbs radiation of a longer wavelength than the second photosensitive element.
A photosensitive element of a photodetector of the present invention can comprise any material and/or construction consistent with providing the photosensitive element a response to the desired wavelength range of electromagnetic radiation. In some embodiments, photosensitive elements comprise photodiodes utilizing various semiconductor materials in the formation of pin junctions or p-i-n junctions. In some embodiments, semiconductor materials used in the formation of photodiode heterojunctions comprise Group III/V semiconductors, Group II/VI semiconductors or combinations thereof. In one embodiment wherein the absorption of SWIR is desired, a photodiode comprising InGaAs can be provided. In some embodiments, InGaAs comprises In0.53Ga0.47As.
Moreover, a photosensitive element of a photodetector, in some embodiments of the present invention, comprises a single pixel constructed of a material having the desired absorption spectrum. In other embodiments, a photosensitive element of a photodetector comprises a plurality of pixels. A plurality of pixels, in some embodiments, comprises a one dimensional array or a two dimensional array of pixels.
In some embodiments, photosensitive elements of a photodetector of the present invention have the same pixel pitch. In other embodiments, photosensitive elements of a photodetector have different pixel pitches.
In another embodiment, the present invention provides a photodetector comprising a read-out integrated circuit, a first photosensitive element electrically connected to the read-out integrated circuit and a second photosensitive element at least partially covering the first photosensitive element and electrically connected to the read-out integrated circuit by one or more electrical connections passing through the first photosensitive element, the second photosensitive element absorbing electromagnetic radiation of a longer wavelength than the first photosensitive element.
In another embodiment, the present invention provides one or more arrays of Photo detectors coupled to a read-out integrated circuit wafer, wherein at least one of the Photo detectors comprises a first photosensitive element electrically connected to the read-out integrated circuit wafer and a second photosensitive element at least partially covering the first photosensitive element and electrically connected to the read-out integrated circuit wafer by one or more electrical connections passing through the first photosensitive element, the second photosensitive element absorbing electromagnetic radiation of a longer wavelength than the first photosensitive element.
As described herein, the first photosensitive element and the second photosensitive element are arranged in a stacked configuration wherein the second photosensitive element at least partially covers the first photosensitive element. As a result, in some embodiments, electromagnetic radiation received by a photodetector of the present invention reaches the second photosensitive element prior to reaching the first photosensitive element. In embodiments of the present invention, the second photosensitive element comprises a composition and/or structure operable to pass radiation to the first photosensitive element for detection while absorbing radiation outside the absorption spectrum of the first photosensitive element.
In some embodiments of a stacked configuration, the second photosensitive element is adjacent to the first photosensitive element. In other embodiments, the second photosensitive element is spaced apart from the first photosensitive element. In some embodiments wherein the second photosensitive element is spaced apart from the first photosensitive element, a space or void can exist between the first and second photosensitive elements. In other embodiments, a radiation transmissive material can be disposed between the first and second photosensitive elements. A radiation transmissive material, as used herein, refers to a material that does not absorb or otherwise interfere with the transmission of electromagnetic radiation to be absorbed by the first and/or second photosensitive elements of the present invention.
Spacing the second photosensitive element apart from the first photosensitive element by a void or an intervening radiation transmissive material, in some embodiments, can isolate the second photosensitive element from the first photosensitive element. As discussed further herein, spacing the second photosensitive element apart from the first photosensitive element is desirable in some embodiments wherein the second photosensitive element requires thermal isolation to minimize dark currents and other environmental factors that degrade the response of the second photosensitive element.
In some embodiments, spacing the second photosensitive element from the first photosensitive element can be achieved by extending one more electrical connections disposed in access ways of the first photosensitive element above a surface of the first photosensitive element. In such embodiments, the one or more electrical connections can serve as a spacer in addition to placing the second photosensitive element in electrical communication with the read-out integrated circuit.
In another aspect, the present invention provides methods of producing photodetectors. In one embodiment, a method of producing a photodetector comprises providing a first photosensitive element comprising one or more electrical contacts for connecting to a read-out integrated circuit, providing at least one access way through the first photosensitive element and at least partially disposing an electrical connection in the at least one access way for receiving a second photosensitive element. In some embodiments, a method of producing a photodetector further comprises providing a second photosensitive element and coupling the second photosensitive element to the electrical connection.
In another embodiment, a method of producing a photodetector comprises providing a read-out integrated circuit, electrically connecting a first photosensitive element to the read-out integrated circuit and electrically connecting a second photosensitive element to the read-out integrated circuit by one more connections passing through the first photosensitive element, wherein the second photosensitive element absorbs electromagnetic radiation of a wavelength longer than the first photosensitive element. In some embodiments, the second photosensitive element at least partially covers the first photosensitive element when electrically connected to the read-out integrated circuit by one or more connections passing through the first photosensitive element.
Moreover, in some embodiments, methods of producing photodetectors of the present invention further comprise spacing the second photosensitive element from the first photosensitive element. In some embodiments, a method of the present invention further comprises providing at least one access way in the second photosensitive element and at least partially disposing an electrical connection in the at least one access way for receiving a third photosensitive element. In some embodiments, a method of the present invention further comprises providing a third photosensitive element and coupling the third photosensitive element to the electrical connection.
In another aspect, the present invention provides methods of detecting a plurality of wavelength ranges of electromagnetic radiation. In one embodiment, a method of detecting a plurality of wavelength ranges comprises providing a photodetector comprising a read-out integrated circuit, a first photosensitive element electrically connected to the read-out integrated circuit and a second photosensitive element electrically connected to the read-out integrated circuit and spaced apart from the first photosensitive element by one or more connections passing through the first photosensitive element and detecting electromagnetic radiation of a first wavelength range with the first photosensitive element and detecting electromagnetic radiation of a second wavelength range with the second photosensitive element.
In another embodiment, a method of detecting a plurality of wavelength ranges comprises providing a photodetector comprising a read-out integrated circuit, a first photosensitive element electrically connected to the read-out integrated circuit and a second photosensitive element electrically connected to the read-out integrated circuit by one or more connections passing through the first photosensitive element and detecting electromagnetic radiation of a first wavelength range with the first photosensitive element and detecting electromagnetic radiation of a second wavelength range with the second photosensitive element, wherein the electromagnetic radiation of the second range has one or more wavelengths longer than the electromagnetic radiation of the first range.
These and other embodiments are described in greater detail in the detailed description which follows.
The present invention can be understood more readily by reference to the following detailed description, examples and drawings and their previous and following descriptions. Elements, apparatus and methods of the present invention, however, are not limited to the specific embodiments presented in the detailed description, examples and drawings. It should be recognized that these embodiments are merely illustrative of the principles of the present invention, Numerous modifications and adaptations will be readily apparent to those of skill in the art without departing from the spirit and scope of the invention.
The present invention provides photodetectors and components thereof having multi-spectral sensing capabilities. In some embodiments, the present invention provides photodetectors comprising a plurality of photosensitive elements in a stacked configuration wherein a second photosensitive element is disposed over a first photosensitive element. The present invention, in some embodiments, provides a first photosensitive element coupled to a read-out integrated circuit, the first photosensitive element having an architecture operable for receiving a second photosensitive element and electrically connecting the second photosensitive element to the read-out integrated circuit. In some embodiments, for example, the first photosensitive element coupled to the read-out integrated circuit comprises an architecture facilitating the construction or processing of a second photosensitive element over the first photosensitive element resulting in a stacked configuration. In some embodiments, for example, the architecture of the first photosensitive element coupled to the read-out integrated circuit permits the construction or deposition of delicate long wavelength photosensitive structures over the first photosensitive element in the production of a photodetector having multi-spectral sensing capabilities.
In one embodiment, the present invention provides a photodetector comprising a first photosensitive element comprising one or more electrical connections for coupling to a read-out integrated circuit and at least one access way extending through the element and an electrical connection at least partially disposed in the access way, the electrical connection accessible for receiving a second photosensitive element. As provided herein, the accessible electrical connection, in some embodiments, permits electrical communication of a second photosensitive element with the read-out integrated circuit, the second photosensitive element being deposited, constructed or hybridized over the first photosensitive element in a stacked configuration. In some embodiments, the first photosensitive element comprises a plurality of access ways having an electrical connection at least partially disposed therein and accessible for receiving a second photosensitive element.
Referring now to the figures,
In some embodiments, an access way passing through the first photosensitive element of a Photo detector of the present invention has a diameter equal to the thickness of the first photosensitive element. In other embodiments, an access way passing through the first photosensitive element has a diameter ranging from about 0.25 μm to about 25 μm or from about 1 μm to about 15 μm. In another embodiment, an access way passing through the first photosensitive element has a diameter ranging from about 2 μm to about 5 μm.
In some embodiments, an access way is generated in the first photosensitive element by etching the first photosensitive element. The first photosensitive element, in some embodiments, for example, can be patterned with a resist and subsequently etched. In some embodiments, etching comprises a wet etch. Wet etching, in some embodiments, comprises exposing the first photosensitive element to an etch composition comprising an acid or a base, and/or an oxidizing agent. In one embodiment, for example, a wet etch composition comprises a phosphoric acid/hydrogen peroxide solution or a citric acid/hydrogen peroxide solution.
In some embodiments, etching comprises a dry etch. A dry etch, in some embodiments, comprises a reactive ion etch or an inductively coupled plasma etch. In some embodiments, for example, reactive ion etches or inductively coupled plasma etches include chemical species including, but not limited to, argon, SiCl4, BCl3, SF6 or O2.
Referring once again to
The combined thickness of an electrical connection and insulating material, in some embodiments, is sufficient to fill the access way. Electrical connections and insulating materials disposed in access ways of photodetectors described herein can have any thickness not inconsistent with the objectives of the present invention. In one embodiment, for example, an insulating material disposed in an access way has a thickness ranging from about 5 nm to about 3 μm with the remaining volume of the access way being occupied by the electrical connection.
Electrical contacts and connections of photonic devices of the present invention can comprise elementally pure metals or metal alloys. In some embodiments, electrical contacts and connections of photonic devices comprise nickel, copper, chromium, tungsten, titanium or tantalum or alloys thereof. Moreover, insulating materials used in photonic devices of the present invention, in some embodiments, comprise silicon oxides, silicon nitrides, titanium oxides, titanium nitrides, tantalum oxides or combinations thereof. In some embodiments, insulating materials comprise polymeric materials.
In the embodiment illustrated in
Electrical connections (222, 224) are disposed in access ways (214, 216). An electrically insulating material (228) is also disposed in the access ways (214, 216) to isolate electrical connections (222, 224) from the first photosensitive element (204). In the embodiment illustrated in
In some embodiments, the second photosensitive element (226) can be coupled with electrical connections (222, 224) in any manner not inconsistent with the objectives of the present invention. In some embodiments, the second photosensitive element (226) is epitaxially grown or otherwise deposited on electrical connections (222, 224). In other embodiments, the second photosensitive element (226) is pre-fabricated and subsequently coupled to electrical connections (222, 224).
In the embodiment illustrated in
The first and second photosensitive elements of a photodetector can be spaced apart by any desired amount. In some embodiments, the first and second photosensitive elements can be spaced apart by a distance of up to about 25 μm. In other embodiments, the first and second photosensitive elements of a photodetector are spaced apart by a distance ranging from about 1 μm to about 20 μm. In another embodiment, the first and second photosensitive elements are spaced apart by a distance ranging from about 2 μm to about 10 μm. In some embodiments, the first and second photosensitive elements are spaced apart by a distance ranging from about 3 μm to about 5 μm. In another embodiment, the first and second photosensitive elements are spaced apart by a distance less than about 1 μm or greater than about 25 μm.
Moreover, in some embodiments, a radiation transmissive material can be disposed in the space or void between the first photosensitive element and the second photosensitive element. Disposing a radiation transmissive material in the space between the first and second photosensitive elements, in some embodiments, can add mechanical stability to the photodetector. Disposing a radiation transmissive material in the space between the first and second photosensitive elements can also assist in isolation, including thermal isolation, of the second photosensitive element. As the second photosensitive element absorbs electromagnetic radiation of a longer wavelength than the first photosensitive element, thermal isolation of the second photosensitive element to minimize dark currents and other environmental factors that degrade element response can be advantageous.
Additionally, in some embodiments, the first photosensitive element of a photodetector further comprises one or more reflective surfaces operable to reflect electromagnetic radiation not absorbed by the second photosensitive element and/or first photosensitive element. In some embodiments, one or more reflective surfaces are disposed on a surface of the first photosensitive element proximate to the second photosensitive element. In such embodiments, the one or more reflective surfaces can reflect electromagnetic radiation having a wavelength range absorbed by the second photosensitive element, thereby providing radiation not absorbed in the first pass through the second photosensitive element an additional chance of absorption by the second photosensitive element. When disposed on a surface of the first photosensitive element proximate to the second photosensitive element, a reflective surface, in some embodiments, does not interfere with or reflect radiation of a wavelength range absorbed by the first photosensitive element.
In another embodiment, one or more reflective surfaces can be disposed within the first photosensitive element and/or on a surface distal to the second photosensitive element. In such embodiments, the reflective surface(s) can reflect radiation having a wavelength range absorbed by the first and/or second photosensitive elements, thereby providing radiation missed in the first pass through the first and second photosensitive elements an additional opportunity for absorption.
In some embodiments, reflective surfaces can comprises any reflective material operable to reflect the desired wavelength of radiation. Reflective surfaces, in some embodiments, comprise metals including, but not limited to, gold, silver, aluminum, titanium, copper, platinum or palladium or alloys thereof. In some embodiments, reflective surfaces comprise a stack of one or more metals. Moreover, in some embodiments, reflective surfaces can be deposited on surfaces or the first photosensitive element or grown into the materials of first photosensitive element.
Referring once again to
As provided herein, the first (204) and second (226) photosensitive elements can have any desired absorption spectra. In some embodiments, the first photosensitive element (204) absorbs electromagnetic radiation of a wavelength longer than the second photosensitive element (226). In such embodiments, the second photosensitive element (226) does not substantially interfere with longer wavelength radiation to be absorbed by the first photosensitive element (204). In some embodiments, the first photosensitive element (204) absorbs LWIR and/or MWIR radiation while the second photosensitive element (226) absorbs visible and/or SWIR radiation.
In another embodiment, the second photosensitive element (226) absorbs electromagnetic radiation of a longer wavelength than the first photosensitive element (204). In such embodiments, the second photosensitive element (226) can display a composition or structure that does not interfere or substantially interfere with passage of shorter wavelength radiation for absorption by the first photosensitive element (204). In one embodiment, for example, the second photosensitive element (226) has a thickness that inhibits or precludes significant attenuation of shorter wavelength light, thereby passing a suitable amount of shorter wavelength light to the first photosensitive element (204) for detection. In some embodiments, the second photosensitive element (226) absorbs LWIR and/or MWIR electromagnetic radiation and the first photosensitive element absorbs visible and/or SWIR radiation.
Moreover, in some embodiments, the first (204) and second (226) photosensitive elements absorb different wavelengths of radiation classified in the same region of the electromagnetic spectrum. As described above, in some embodiments, for example, the first (204) and second (226) photosensitive elements absorb radiation in the infrared region of the electromagnetic spectrum where the second photosensitive element (226) absorbs infrared radiation of a longer or shorter wavelength than the infrared radiation absorbed by the first photosensitive element. In some embodiments, the first (204) and second (226) photosensitive elements absorb radiation in the visible region of the electromagnetic spectrum where the second photosensitive element (226) absorbs visible radiation of a longer or shorter wavelength than the visible radiation absorbed by the first photosensitive element (204). The first (204) and second photosensitive (226) elements, in some embodiments, absorb radiation in the ultraviolet region of the electromagnetic spectrum where the second photosensitive element (226) absorbs ultraviolet radiation of a longer or shorter wavelength than the ultraviolet radiation absorbed by the first photosensitive element (204)
Additionally, the second photosensitive element (226) is provided as a single pixel in the embodiment illustrated in
In some embodiments of photodetectors of the present invention, the first photosensitive element and the second photosensitive element are independently connected to the read-out integrated circuit. In embodiments wherein the first and the second photosensitive elements are independently connected to the read-out integrated circuit, photocurrent provided by the first photosensitive element can be completely distinguished from photocurrent provided by the second photosensitive element. In other embodiments, the first and second photosensitive elements can share a common cathode or anode connection when electrically coupled to the read-out integrated circuit. Sharing a common cathode or anode, in some embodiments, can reduce the wiring complexity of the photodetector. In another embodiment, the first and second photosensitive elements are connected serially (the anode of one photosensitive element connected to the cathode of another photosensitive element) or in parallel (two anodes connected and two cathodes connected wherein the grouped anodes and grouped cathodes are connected to the read-out integrated circuit independent of one another). Such an arrangement would combine the photocurrent from the first and second photosensitive elements.
In some embodiments, the second photosensitive element of a photodetector of the present invention comprises at least one access way extending through the element and an electrical connection at least partially disposed in the access way for receiving a third photosensitive element. The electrical connection of the second photosensitive element, in some embodiments, facilitates electrical communication of a third photosensitive element with the read-out integrated circuit, the third photosensitive element being deposited, constructed or hybridized over the second photosensitive element in a stacked configuration. In some embodiments, the second photosensitive element comprises a plurality of access ways, each access way having an electrical connection at least partially disposed therein and accessible for receiving a third photosensitive element.
A photosensitive element of a photodetector of the present invention can comprise any material and/or construction consistent with providing the photosensitive element a response to the desired wavelength range of electromagnetic radiation. In some embodiments, photosensitive elements comprise one or more photodiode pixels utilizing various semiconductor materials in the formation of pn junctions or p-i-n junctions. In some embodiments, semiconductor materials used in the formation heterojunctions of photodiodes comprise Group III/V semiconductors, Group II/VI semiconductors or combinations thereof. In one embodiment wherein the absorption of SWIR is desired, a photodiode comprising InGaAs can be provided. In some embodiments, InGaAs comprises In0.53Ga0.47As. In some embodiments wherein the absorption of MWIR and/or LWIR is desired, photodiodes comprising Group III/V type-II super lattices or HgCdTe are provided.
In some embodiments, photosensitive elements can be constructed according to the materials and methods disclosed in U.S. Pat. Nos. 6,573,581 and 6,489,635, which are incorporated by reference herein in their entireties.
Photosensitive elements of the present invention have any desired thickness not inconsistent with the objectives of the present invention. In some embodiments, a photosensitive element has a thickness ranging from about 0.25 μm to about 25 μm. In other embodiments, a photosensitive element has a thickness ranging from about 1 μm to about 15 μm or from about 2 μm to about 10 μm. In another embodiment, a photosensitive element has a thickness ranging from about 3 μm to about 5 μm. In a further embodiment, a photosensitive element has a thickness less than about 0.25 μm or greater than about 25 μm.
In another embodiment, the present invention provides a photodetector comprising a read-out integrated circuit, a first photosensitive element electrically connected to the read-out integrated circuit and a second photosensitive element at least partially covering the first photosensitive element and electrically connected to the read-out integrated circuit by one or more electrical connections passing through the first photosensitive element, wherein the second photosensitive element absorbs electromagnetic radiation of a longer wavelength than the first photosensitive element.
In another embodiment, the present invention provides one or more arrays of photodetectors coupled to a read-out integrated circuit wafer, wherein at least one of the photodetectors comprises a first photosensitive element electrically connected to the read-out integrated circuit wafer, the first photosensitive element having an access way extending through the element and an electrical connection at least partially disposed in the access way for receiving a second photosensitive element.
In another embodiment, at least one photodetector of an array comprises a first photosensitive element electrically connected to the read-out integrated circuit wafer and a second photosensitive element at least partially covering the first photosensitive element and electrically connected to the read-out integrated circuit wafer by one or more electrical connections passing through the first photosensitive element, the second photosensitive element absorbing electromagnetic radiation of a longer wavelength than the first photosensitive element.
In some embodiments, an array of photodetectors comprises a focal plane array. In some embodiments of a focal plane array, each photodetector is a pixel in the array. In some embodiments, a focal plane array comprises a one-dimensional array. A one dimensional array, in some embodiments, comprises from 1×128 pixels to 1×4096 pixels. In some embodiments, a focal plane array comprises a two-dimensional array. A two-dimensional array, in some embodiments, comprises from 128×128 pixels to 2048×2048 pixels.
In another aspect, the present invention provides methods of producing photodetectors. In one embodiment, a method of producing a photodetector comprises providing a first photosensitive element comprising one or more electrical contacts for connecting to a read-out integrated circuit, providing at least one access way through the first photosensitive element and at least partially disposing an electrical connection in the at least one access way for receiving a second photosensitive element. In some embodiments, a method of producing a photodetector further comprises providing a second photosensitive element and coupling the second photosensitive element to the electrical connection.
In another embodiment, a method of producing a photodetector comprises providing a read-out integrated circuit, electrically connecting a first photosensitive element to the read-out integrated circuit and electrically connecting a second photosensitive element to the read-out integrated circuit by one more connections passing through the first photosensitive element, wherein the second photosensitive element absorbs electromagnetic radiation of a wavelength longer than the first photosensitive element. In some embodiments, the second photosensitive element at least partially covers the first photosensitive element when electrically connected to the read-out integrated circuit by one or more connections passing through the first photosensitive element.
Moreover, in some embodiments, methods of producing photodetectors of the present invention further comprise spacing the second photosensitive element from the first photosensitive element. In some embodiments, a method of the present invention further comprises providing at least one access way in the second photosensitive element and at least partially disposing an electrical connection in the at least one access way for receiving a third photosensitive element. In some embodiments, a method of the present invention further comprises providing a third photosensitive element and coupling the third photosensitive element to the electrical connection.
Referring once again to the figures,
The substrate (318) and the etch stop or release layer (316) are removed from the photosensitive element (304) once the first photosensitive element assembly (300) is electrically coupled to the read-out integrated circuit (302), as illustrated in
The first photosensitive element assembly (400) further comprises an etch stop or release layer (416) disposed between the photosensitive element (404) and a substrate (418). In comparison with first photosensitive element assembly (300) of
Electrical connections (432, 434) are disposed in the access ways (428, 430) and isolated from the first photosensitive element (404) by an insulating material (436) as illustrated in
Insulating materials (514) are also provided in the first photosensitive element assembly (500) to prevent shorting of electrical connections during integration of the assembly (500) with the read-out integrated circuit (502). In some embodiments, the insulating materials (514) can serve as a spacer between the first photosensitive element assembly (500) and the read-out integrated circuit (502). The first photosensitive element assembly (500) further comprises an etch stop or release layer (516) disposed between the photosensitive element (504) and a substrate (518).
The first photosensitive element assembly (500) of
In forming the access ways (528, 530) and electrical connections (524, 526) through the first photosensitive element prior to coupling with a read-out integrated circuit (502), the dimensions of the access ways (528, 530) and the resulting electrical contacts (524, 526) can be varied. As illustrated in
The etch stop or release layer (516) and the substrate (518) can be removed once the first photosensitive element assembly (500) is coupled to the read-out integrated circuit (502), thereby making electrical connections (524, 526) accessible for receiving a second photosensitive element. As illustrated in
In extending above the surface of the first photosensitive element (504), electrical connections (524, 526) can act as a spacer between the first photosensitive element (504) and the second photosensitive element (534), thereby providing a space or void (536) between the first (504) and second (534) photosensitive elements, as illustrated in the cross-sectional view of
Moreover, in some embodiments, the second photosensitive element (534) comprises electrical contacts (not shown) extending above the surface of the second photosensitive element (534) for coupling to electrical connections (524, 526). Electrical contacts extending above the surface of the second photosensitive element (534) can additionally serve as spacers between the first photosensitive element (504) and the second photosensitive element (534).
In view of the foregoing, in some embodiments, the second photosensitive element (534) is spaced from the first photosensitive element (504) by distance equivalent to the height an electrical connection (524 or 526) extends above the surface of the first photosensitive element (504). In other embodiments, the second photosensitive element (534) is spaced from the first photosensitive element (504) by a distance equivalent to the height by which an electrical contact of the second photosensitive element (534) extends above the surface of the second photosensitive element (534). In another embodiment, the second photosensitive element (534) is spaced from the first photosensitive element (504) by a distance equaling the summation of the height an electrical connection (524 or 526) extends above the first photosensitive element (504) and the height an electrical contact of the second photosensitive element extends above the surface of the second photosensitive element (534).
Integrating a second photosensitive element with a first photosensitive element assembly can be achieved by several methods.
The first photosensitive element assembly (600) further comprises access ways (616, 618) extending to the read-out integrated circuit (602) through the first photosensitive element (602) and an under fill material (620). Electrical connections (622, 624) operable to receive and place a second photosensitive element in electrical communication with the read-out integrated circuit (604) are disposed in the access ways (616, 618). An insulating material (626) isolates the electrical connections (622, 624) from the first photosensitive element (602). The electrical connections (622, 624) and the associated insulating material (626) extend above the surface of the first photosensitive element (602).
Planarizing and/or sacrificial layer(s), in some embodiments, are applied to the first photosensitive assembly (600) in preparation for deposition of the second photosensitive element, as illustrated in
Planarizing and sacrificial layers used in the construction of photodetectors of the present invention can comprise any suitable material known to one of skill in the art for serving as a planarizing layer or a sacrificial layer. In some embodiments, planarizing and sacrificial layers comprise one or more polymeric resists.
According to
In some embodiments, as illustrated in
In another embodiment of a method of producing a photodetector of the present invention, a first photosensitive element assembly is coupled to a prefabricated second photosensitive element assembly.
One or a plurality of insulating materials (714) are also provided in the first photosensitive element assembly (700) to prevent shorting of electrical connections during integration of the assembly (700) with the read-out integrated circuit (702).
The first photosensitive element assembly (700) further comprises access ways (716, 718) extending to the read-out integrated circuit (702) through the first photosensitive element (704) and the under fill material (720). Electrical connections (722, 724) operable to receive and place a second photosensitive element (732) in electrical communication with the read-out integrated circuit (702) are disposed in the access ways (716, 718). An insulating material (726) isolates the electrical connections (722, 724) from the first photosensitive element (702). The electrical connections (722, 724) and the associated insulating material (726) extend above the surface of the first photosensitive element (702).
The second photosensitive element assembly (730) comprises a second photosensitive element (732) and electrical contacts (734, 736) for coupling to electrical connections (722, 724) of the first photosensitive element assembly (700). In the embodiment shown in
The second photosensitive element assembly (730) is joined to the first photosensitive element assembly (700) by coupling electrical contacts (734, 736) with electrical connections (722, 724), as illustrated in the cross-sectional view of
Alternatively, in some embodiments, the first photosensitive element assembly (700) and the second photosensitive element assembly (730) are coupled prior to being coupled to the read-out integrated circuit (704).
In some embodiments of methods of producing photodetectors of the present invention, the second photosensitive element can be etched to provide a desired thickness or to provide one or more apertures in the photosensitive element. In some embodiments, a resist is deposited on the second photosensitive element prior to etching. A resist, in some embodiments, is patterned to provide the second photosensitive element with a pattern of apertures or a pattern of areas having reduced thickness. Etching the second photosensitive element, in some embodiments is administered subsequent to coupling the second photosensitive element to the read-out integrated circuit through one or more access ways passing through the first photosensitive element. In other embodiments, etching of the second photosensitive element is administered prior to coupling the second photosensitive element to the read-out integrated circuit through one or more access ways passing through the first photosensitive element.
As provided herein, in some embodiments, the second photosensitive element of a photodetector of the present invention comprises at least one access way extending through the element and an electrical connection at least partially disposed in the access way for receiving a third photosensitive element. The electrical connection of the second photosensitive element, in some embodiments, facilitates electrical communication of a third photosensitive element with the read-out integrated circuit, the third photosensitive element being deposited, constructed or hybridized over the second photosensitive element in a stacked configuration. In some embodiments, the second photosensitive element comprises a plurality of access ways, each access way having an electrical connection at least partially disposed therein and accessible for receiving a third photosensitive element.
One or a plurality of insulating materials (24) are also provided in the first photosensitive element assembly (10) to prevent shorting of electrical connections during integration of the assembly (10) with the read-out integrated circuit (12).
The first photosensitive element assembly (10) further comprises access ways (26, 28) extending to the read-out integrated circuit (12) through the first photosensitive element (14) and the under fill material (30). Electrical connections (32, 34) operable to receive and place a second photosensitive element (42) in electrical communication with the read-out integrated circuit (12) are disposed in the access ways (26, 28). Electrical connections (32, 34) terminate in electrical contacts (35, 37) coupled to the read-out integrated circuit (12). An insulating material (36) isolates the electrical connections (32, 34) from the first photosensitive element (12). The electrical connections (32, 34) and the associated insulating material (36) extend above the surface of the first photosensitive element (14).
The second photosensitive element assembly (40) comprises a second photosensitive element (42). The second photosensitive element (42) comprises a plurality of photodiode pixels (46, 48) comprised of pn junctions or p-i-n junctions. In the embodiment illustrated in
The second photosensitive element assembly (40) also comprises access ways (54, 56) extending through the second photosensitive element (42) and etch stop or release layer (58) and into the substrate (60) of the second photosensitive element assembly (40). Electrical connections (62, 64) are disposed in the access ways (54, 56). Electrical connections (62, 64) are isolated from the second photosensitive element by an insulating material (66). Moreover, electrical connections (60, 62) terminate in electrical contacts (68, 70).
One or a plurality of insulating materials (69) are also provided in the second photosensitive element assembly (40) to prevent shorting of electrical connections during integration of the assembly (40) with the first photosensitive element assembly (10) and the read-out integrated circuit (12)
As illustrated in
One or a plurality of insulating materials (24) are also provided in the first photosensitive element assembly (10) to prevent shorting of electrical connections during integration of the assembly (10) with the read-out integrated circuit (12).
The first photosensitive element assembly (10) further comprises access ways (26, 28, 30) extending through the first photosensitive element (14) and terminating in contacts (32, 34, 36) respectively. access ways (26, 28, 30) comprise electrical connections (38, 40, 42) at least partially disposed therein operable to receive and place a second photosensitive element (44) in electrical communication with the read-out integrated circuit (12). An insulating material (39) isolates the electrical connections (38, 40, 42) from the first photosensitive element (12). Moreover, electrical connections (34, 40, 42) terminate in electrical contacts (44, 46, 48) respectively. The electrical connections (38, 40, 42) and the associated insulating material (39) extend above the surface of the first photosensitive element (14). Electrical connection (38) additionally has associated therewith a routing (45). access way (28) and associated electrical connection (40) in the embodiment illustrated in
The second photosensitive element assembly (50) comprises a second photosensitive element (44). The second photosensitive element (52) comprises a plurality of photodiode pixels (56, 58) comprised of pn junctions or p-i-n junctions. The second photosensitive element assembly (50) also comprises access ways (60, 62) extending through the second photosensitive element (52) and etch stop or release layer (64) and into the substrate (66) of the second photosensitive element assembly (50). Electrical connections (68, 70) are disposed in the access ways (60, 62). Electrical connections (68, 70) are isolated from the second photosensitive element by an insulating material (72). Moreover, electrical connections (68, 70) terminate in electrical contacts (74, 76). access way (60) and electrical connection (68) are disposed in front of photodiode pixel (16) of
One or a plurality of insulating materials (78) are also provided in the second photosensitive element assembly (50) to prevent shorting of electrical connections during integration of the assembly (50) with first photosensitive element assembly (10).
As illustrated in
A second photosensitive element (818) is subsequently coupled to the electrical connections (808, 810) of each first photosensitive element assembly (804) to provide arrays (820) of photodetectors (822) on the read-out integrated circuit wafer (806), as illustrated in
Moreover, in the embodiment illustrated in
Second photosensitive elements (910) can be provided to each first photosensitive element assembly (904) of each array (902) in any manner described herein for coupling a second photosensitive element to a first photosensitive element assembly. In one embodiment, for example, a plurality of substrates comprising plurality of arrays of second photosensitive element assemblies is provided, the plurality of arrays of second photosensitive element assemblies brought into contact and coupled to the first photosensitive element assemblies as described herein.
In another aspect, the present invention provides methods of detecting a plurality of wavelength ranges of electromagnetic radiation. In one embodiment, a method of detecting a plurality of wavelength ranges comprises providing a photodetector comprising a read-out integrated circuit, a first photosensitive element electrically connected to the read-out integrated circuit and a second photosensitive element electrically connected to the read-out integrated circuit and spaced apart from the first photosensitive element by one or more connections passing through the first photosensitive element and detecting electromagnetic radiation of a first wavelength range with the first photosensitive element and detecting electromagnetic radiation of a second wavelength range with the second photosensitive element.
In another embodiment, a method of detecting a plurality of wavelength ranges comprises providing a photodetector comprising a read-out integrated circuit, a first photosensitive element electrically connected to the read-out integrated circuit and a second photosensitive element electrically connected to the read-out integrated circuit by one or more connections passing through the first photosensitive element and detecting electromagnetic radiation of a first wavelength range with the first photosensitive element and detecting electromagnetic radiation of a second wavelength range with the second photosensitive element, wherein the electromagnetic radiation of the second range has one or more wavelengths longer than the electromagnetic radiation of the first range.
Various non-limiting embodiments of the present invention will now be illustrated in the following, non-limiting example.
EXAMPLE 1 photodetector Comprising a First Photosensitive Element Comprising access waysA first photosensitive element comprising an In0.53Ga0.47As photosensitive layer epitaxially grown by MOCVD on an InP cathode disposed on an InP substrate was provided. The In0.53Ga0.47As layer had a thickness of about 3.5 μm, the InP cathode had a thickness in the range of about 0.1 to about 2.0 μm, and the InP substrate had a thickness of about 700 μm. An etch stop layer of In0.53Ga0.47As having a thickness of about 0.75 μm was provided between the InP substrate and InP cathode. An InP cap having a thickness in the range of about 0.2 μm to about 1 μm was provided on the surface of the In0.53Ga0.47As layer opposite of the InP substrate.
Two access ways were subsequently chemically etched through the InP cap and In0.53Ga0.47As layer with citric acid/hydrogen peroxide solution. The access ways additionally extended into the InP substrate as each access way had a depth of about 5 μm measured from the InP cap. A SiNx insulating material was subsequently deposited in each of the access ways by plasma enhanced chemical vapor deposition (PECVD). SiNx was additionally deposited on the surface of the InP cap.
Two p-dopant diffusion holes were opened in the SiNx layer on the InP cap to permit diffusion of a Zn+-dopant into the first photosensitive element for the formation of two p-regions thereby producing two p-i-n photodiode constructions. The p-dopant holes had a diameter within the range of 0.5 μm to 1.2 μm. Gold, nickel or aluminum contacts were then deposited by thermal evaporation, electrical evaporation or a plating process to close the p-dopant holes.
N-contact holes were subsequently opened in the SiNx layer and paths were chemically etched to the InP cathode followed deposition of gold, gold-germanium or nickel by thermal evaporation, electrical evaporation or a plating process to form the n-contacts.
Nickel was subsequently filled into the open end of the two access ways by thermal evaporation, and the access ways were subsequently capped with gold contacts. Filling the access ways with Ni formed the electrical contacts at least partially disposed in the access ways of the first photosensitive layer as described herein. Indium bumps were formed on the p-region contacts, n-region contacts and access way contacts for coupling with a read-out integrated circuit. The first photosensitive element was then coupled to a read out integrated circuit by soldering the In bumps to the proper areas on the read-out integrated circuit.
After coupling to the read-out integrated circuit, the InP substrate was removed by a combination of mechanical lapping and wet etching using citric and/or phosphoric acid based etches or RIE processes to reveal electrical connections at least partially disposed in the access ways. As the electrical connections extended into the InP substrate by way of the access ways, removal of the InP substrate permitted extension of the electrical connections above a surface of the first photosensitive element as described herein. Moreover, removal of the InP substrate rendered the electrical connections accessible for receiving a second photosensitive element according to the embodiments described herein.
It is to be understood that the present description illustrates aspects of the invention relevant to a clear understanding of the invention. Certain aspects of the invention that would be apparent to those of ordinary skill in the art and that, therefore, would not facilitate a better understanding of the invention have not been presented in order to simplify the present description. Although the present invention has been described in connection with certain embodiments, the present invention is not limited to the particular embodiments disclosed, but is intended to cover modifications that are within the spirit and scope of the invention, as defined by the appended claims.
Claims
1. A method of producing a photodetector comprising:
- providing a substrate wafer comprising a first photosensitive element, the first photosensitive element comprising a first surface and a directionally opposite second surface, the first surface being coupled to the substrate wafer and the second surface comprising one or more electrical contacts operable for connecting to a read-out integrated circuit wafer and at least one accessway extending orthogonally through the first photosensitive element and terminating in a respective electrical contact and an electrical connection co-axially disposed in the accessway;
- coupling the first photosensitive element to the read-out integrated circuit wafer via the electrical contact;
- removing the substrate wafer from the first photosensitive element;
- providing a second photosensitive element; and
- coupling the second photosensitive element to the electrical connection of the first photosensitive element.
2. The method of claim 1, wherein the step of coupling the second photosensitive element includes bringing the second photosensitive element into contact with the electrical connection immediately adjacent the first surface of the first photosensitive element.
3. The method of claim 1, wherein the second photosensitive element absorbs electromagnetic radiation of a wavelength longer than the first photosensitive element.
4. The method of claim 1, wherein the step of providing a second photosensitive element includes the step of bringing the second photosensitive element into spaced apart relationship with the first photosensitive element in a stacked configuration by a distance at least partially provided by the electrical connection at least partially disposed in the accessway of the first photosensitive element.
5. The method of claim 1, wherein the first photosensitive element comprises InxGa1-xAs.
6. The method of claim 5, wherein the InxGa1-xAs comprises In0.53Ga0.47As.
7. The method of claim 1, wherein the first photosensitive element comprises one or more pixels.
8. The method of claim 7, wherein the first photosensitive element comprises an array of pixels having a one dimensional array or a two dimensional array.
9. The method of claim 1, wherein the first photosensitive elements absorb visible radiation, short-wavelength infrared radiation, mid-wavelength infrared radiation, long-wavelength infrared radiation or combinations thereof.
10. The method of claim 1, wherein the second photosensitive element comprises an accessway extending through the second photosensitive element and an electrical connection at least partially disposed in the accessway, the electrical connection accessible for receiving a third photosensitive element.
11. A method of producing a photodetector comprising:
- providing a first photosensitive element coupled to a substrate wafer along a first surface and having an electrical contact at a directionally opposite second surface and an accessway extending orthogonally through the first photosensitive element and terminating in the electrical contact, the electrical contact being operable for connecting to a read-out integrated circuit wafer, and wherein the accessway includes an electrical connection co-axially disposed in the accessway that electrically connects to the electrical contact;
- coupling an exposed surface of the read-out integrated circuit wafer to the electrical contact along the second surface;
- removing the substrate wafer from the first photosensitive element and exposing the accessway and the electrical connection; and
- coupling a second photosensitive element to the exposed accessway and to the electrical connection at the first surface.
12. The method of claim 11, wherein the second photosensitive element absorbs electromagnetic radiation of a wavelength longer than the first photosensitive element.
13. The method of claim 11, wherein the step of coupling the second photosensitive element includes the step of bringing the second photosensitive element into spaced apart relationship with the first photosensitive element in a stacked configuration by a distance at least partially provided by the electrical connection at least partially disposed in the accessway of the first photosensitive element.
14. The method of claim 11, further comprising providing the first photosensitive element having InxGa1-xAs.
15. The method of claim 14, wherein the InxGa1-xAs comprises In0.53Ga0.47As.
16. The method of claim 11, further comprising providing the first photosensitive element having one or more pixels.
17. The method of claim 16, further comprising providing the first photosensitive element having an array of pixels with a one dimensional array or a two dimensional array.
18. The method of claim 11, wherein the first photosensitive element absorbs visible radiation, short-wavelength infrared radiation, mid-wavelength infrared radiation, long-wavelength infrared radiation or combinations thereof.
19. The method of claim 11, wherein the step of providing the second photosensitive element comprises providing the second photosensitive element with a second accessway extending through the second photosensitive element and a second electrical connection at least partially disposed in the second accessway, the second electrical connection accessible for receiving a third photosensitive element.
20. The method of claim 11, wherein the step of providing a first photosensitive element further comprises providing an insulating material in the accessway to isolate the electrical connection from the photosensitive element.
| 4514755 | April 30, 1985 | Tabei |
| 5373182 | December 13, 1994 | Norton |
| 5479032 | December 26, 1995 | Forrest et al. |
| 7352043 | April 1, 2008 | Gidon |
| 7629582 | December 8, 2009 | Hoffman et al. |
| 8093559 | January 10, 2012 | Rajavel |
| 20040195509 | October 7, 2004 | Sundaram et al. |
| 20060043438 | March 2, 2006 | Holm et al. |
| 20060124831 | June 15, 2006 | Schimert et al. |
| 20090121307 | May 14, 2009 | Tennant |
Type: Grant
Filed: Mar 5, 2013
Date of Patent: Jul 1, 2014
Patent Publication Number: 20130183788
Assignee: Sensors Unlimited, Inc. (Princeton, NJ)
Inventors: John Trezza (Manalapan, NJ), Martin Ettenberg (Princeton, NJ)
Primary Examiner: Georgia Y Epps
Assistant Examiner: Don Williams
Application Number: 13/785,808
International Classification: H01L 27/00 (20060101); H01L 31/00 (20060101); G01J 1/44 (20060101);
