Semiconductor device

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Description

FIG. 1 is a front, top and right side perspective view of a semiconductor device, showing our new design;

FIG. 2 is a front elevational view thereof;

FIG. 3 is a rear elevational view thereof;

FIG. 4 is a top plan view thereof;

FIG. 5 is a bottom plan view thereof;

FIG. 6 is a left side elevational view thereof; and,

FIG. 7 is a right side elevational view thereof.

Claims

The ornamental design for a semiconductor device, as shown.

Referenced Cited
U.S. Patent Documents
D358806 May 30, 1995 Siegel et al.
D396213 July 21, 1998 Enomoto et al.
D401912 December 1, 1998 Majumdar et al.
D421969 March 28, 2000 Kawafuji et al.
5220298 June 15, 1993 Nagase
Other references
  • Catalogue of Sanken Electronics Co., Ltd., “Sanken Silicon Power MOS FET Array SLA5075 (LF853),” Specification No. SSE-21515, pp. 1-8 (with English Translation) (Undated).
  • Catalogue of Sanken Electric Co., Ltd., “Sanken Silicon Power MOS FET Array SLA5056,” Specification No. SSE-21259, pp. 1-7 (with English Translation) (Undated).
  • Catalogue of Toshiba Corp., “Semi Conductor Device” (Undated).
Patent History
Patent number: D448740
Type: Grant
Filed: Mar 9, 2001
Date of Patent: Oct 2, 2001
Assignee: Mitsubishi Denki Kabushiki Kaisha (Tokyo)
Inventors: Mitsutaka Iwasaki (Tokyo), Hitoshi Toda (Tokyo), Hisashi Kawafuji (Fukuoka)
Primary Examiner: Brian N. Vinson
Attorney, Agent or Law Firm: Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
Application Number: 29/138,197
Classifications
Current U.S. Class: Semiconductor, Transistor Or Integrated Circuit (24) (D13/182)
International Classification: 1303;