Abstract: A surface PIN (SPIN) device and a method of fabricating such a SPIN device. The SPIN device, when activated, confines carrier injection to a small volume near the surface of the device such that the device is sufficiently conductive to simulate a planar conductor. The SPIN device comprises a P+ region and an N+ region formed in an intrinsic (I) layer. The P+ and N+ regions are separated by a lateral length of intrinsic material of length L. The length L is approximately the carrier diffusion length. When DC bias is applied across the N+ and P+ regions carriers are injected into the intrinsic region at a density exceeding 1018 carriers per cubic cm. The intrinsic region is sufficiently thin to confine the carriers near the surface of the intrinsic region. As such, in the “on” state, the SPIN device simulates a conductive material. In the “off” state, the SPIN device is no longer conductive.

Abstract: The present invention provides an in situ plasma reducing process to reduce oxides or other contaminants, using a compound of nitrogen and hydrogen, typically ammonia, at relatively low temperatures prior to depositing a subsequent layer thereon. The adhesion characteristics of the layers are improved and oxygen presence is reduced compared to the typical physical sputter cleaning process of an oxide layer. This process may be particularly useful for the complex requirements of a dual damascene structure, especially with copper applications.

Abstract: A trench is formed in a semiconductor substrate through a mask composed of a silicon oxide film formed on the semiconductor substrate. Then, an edge portion at an opening portion of the mask is etched so that an opening width thereof is wider than that of the trench. After that, an inner surface of the trench is smoothed by thermal treatment around at 1000° C. in non-oxidizing or non-nitriding atmosphere under low pressure. Then, the trench is filled with an epitaxial film. After that, the epitaxial film is polished, whereby a semiconductor substrate for forming a semiconductor device is obtained.

Abstract: A replacement gate process is disclosed comprising the steps of forming a dummy gate stack on a substrate, depositing a PMD layer on the substrate and polishing this PMD layer to expose the top surface of the dummy gate stack. The dummy gate stack can be removed selective to the spacers and the PMD layer. SiC is used as spacer or CMP stop layer to improve the uniformity of the PMD CMP step. SiC can also be used as etch stop layer during the etching of the contact holes or during the formation of a T-gate.

Abstract: A high-sensitivity Pd/InP hydrogen sensor was made by a) forming an n-type or p-type semiconductor film on a semiconductor substrate; b) forming a patterned first metal electrode on said semiconductor film, wherein said first metal electrode forms an Ohmic contact with said semiconductor film; and c) forming a second metal electrode on said semiconductor film, said second metal electrode being isolated from said first metal electrode, wherein said second metal electrode forms a Schottky contact with said semiconductor film, wherein a thickness of said second metal electrode and a material of which said second metal electrode is made enable a Schottky barrier height of said Schottky contact to decrease when hydrogen contacts said second metal electrode. The second metal electrode can be physical vapor deposited or electroless plated.

Abstract: In a method of fabricating a COB DRAM cell, a polysilicon plug is formed on the source and drain in self-alignment with the gate electrode. A bit line contact and a storage electrode contact are formed on the polysilicon plug thereby to reduce the aspect ratio of both the bit line contact and the storage electrode contact. With the polysilicon plug formed in self-alignment with the gate electrode, short-circuiting of contacts of adjacent element regions and short-circuiting of the plugs of the source and drain will not occur, leading to high protection against misregistration. Moreover, an independent lithography process is not required for forming the polysilicon plug, and, therefore, the number of fabrication steps is reduced.

Abstract: A method for fabricating a semiconductor device including a silicon substrate includes forming a thin Oxide base film on a substrate, and then annealing the substrate in ammonia. FET gates are then conventionally formed over the gate insulator. The resultant gate insulator is electrically insulative without degrading performance with respect to a conventional gate oxide insulator.

Abstract: A via 42 is formed by copper plating on a surface of an aluminum electrode pad 32 of a semiconductor chip 30. Since the via 42 having flexibility absorbs a stress generated due to a difference in thermal expansion between the semiconductor chip 30 and a substrate, the semiconductor chip 30 can be mounted onto the substrate 50 with high reliability and connection reliability of the semiconductor chip 30 can be enhanced.

Abstract: A process for manufacturing a semiconductor device having a lower wiring layer, an interlayer insulating film and an upper wiring layer in this order and a connection hole formed in the interlayer insulating film on the lower wiring layer, wherein the connection hole is provided by the steps of: forming a photoresist layer on the interlayer insulating film; and forming in the photoresist layer an opening for the connection hole which exposes the interlayer insulating film at the bottom thereof and an opening for a dummy connection hole which does not expose the interlayer insulating film at the bottom thereof.

Abstract: A method for fabricating an ultra-small electrode or plug contact for use in chalcogenide memory cells specifically, and in semiconductor devices generally, in which disposable spacers are utilized to fabricate ultra-small pores into which the electrodes are formed. The electrodes thus defined have minimum lateral dimensions ranging from approximately 500 to 4000 Angstroms. The pores thus defined may then be used to fabricate a chalcogenide memory cell or other semiconductor devices.

Abstract: Disclosed is a method for manufacturing an interconnect structure situated on a semiconductor wafer having a substrate assembly thereon. The interconnect structure is formed in a recess such as a trench, a hole, a via, or a combination of a trench and a hole or via within a dielectric material situated on the substrate assembly of the semiconductor wafer. At least one barrier layer is deposited within the recess. A seed layer helping to promote nucleation, deposition, and growth of a material that will be used to fill up the recess is then deposited on the barrier layer. An electrically conductive layer is then formed upon the seed layer. An energy absorbing layer will then be formed upon the conductor layer, where the energy absorbing layer has a greater thermal absorption capacity than that of the electrically conductive layer.

Abstract: Some of the members constituting a semiconductor element are formed from &agr;-Si and an HSG forming process is implemented to form hemispherical polysilicon grains at some of the members formed from &agr;-Si. Thus, a semiconductor device that is achieved without requiring a great number of manufacturing steps such as film formation and etching, facilitates control of the individual steps and assures reliable electrical connection between the members and a method of manufacturing such a semiconductor device are provided.

Abstract: A method for selectively coupling a conductive material (60) to a contact region (32) of a semiconductor device (8) includes bombarding residual material (40) coupled to the contact region (32) with inert ions (44) at a first position associated with an integrated cluster tool (90) to increase the reactive surface area of the residual material (40). Hydrogen ions (46) are introduced at the first position for reaction with the residual material (40) to remove the residual material (40) from the contact region (32). The semiconductor device (8) is transferred in situ from the first position to a second position associated with the integrated cluster tool (90). The conductive material (60) is selectively coupled to the contact region (32) at the second position using chemical vapor deposition.

Abstract: A method of forming a thin film metallization layer having a predetermined residual stress and a predetermined sheet resistance and force measuring devices formed using the methods.

Abstract: A semiconductor device includes a substrate; a semiconductor region formed on the substrate; and a silicide layer as a contact layer formed directly contacting the semiconductor region; wherein the silicide layer is made to be rich in silicon while including such a silicon amount that contact resistance is significantly lowered and a method for making a semiconductor device which has the steps of: forming selectively a given conductive type semiconductor region on a substrate; forming a Co—Si alloy layer on the entire surface of the semiconductor region; introducing Si into the entire surface or part of the Co—Si alloy layer; and conducting the thermal treatment of the substrate to react the introduced Si with the Co—Si alloy layer and the Ti-included layer to form a Si-rich silicide layer including such a silicon amount that contact resistance is significantly lowered.

Abstract: A method for forming dual-damascene type conducting interconnects with non-metallic barriers that protect said interconnects from fluorine out-diffusion from surrounding low-k, fluorinated dielectric materials. One embodiment of the method is particularly suited for forming such interconnects in microelectronics fabrications of the sub 0.15 micron generation.

Abstract: A method in a plasma processing chamber for improving etch uniformity while etching a semiconductor substrate. The method includes placing the semiconductor substrate into a sacrificial substrate holder. The sacrificial substrate holder is configured to present a sacrificial etch portion surrounding the semiconductor substrate to a plasma within the plasma processing chamber to permit the plasma to etch a first surface of the semiconductor substrate and a first surface of the sacrificial etch portion simultaneously. The first surface of the sacrificial etch portion is formed of a material capable of being etched by the plasma. The method further includes positioning the semiconductor substrate and the sacrificial substrate holder into the plasma processing chamber. There is also included striking the plasma from an etchant source gas released into the plasma processing chamber.

Abstract: There is provided an inexpensive light emitting device and an electronic instrument using the same. In this invention, photolithography steps relating to manufacture of a transistor are reduced, so that the yield of the light emitting device is improved and the manufacturing period thereof is shortened. A feature is that a gate electrode is formed of conductive films of plural layers, and by using the selection ratio of those at the time of etching, the concentration of an impurity region formed in an active layer is adjusted.

Abstract: In one aspect, the invention includes a method of forming a material within an opening, comprising: a) forming an etch-stop layer over a substrate, the etch-stop layer having an opening extending therethrough to expose a portion of the underlying substrate and comprising an upper corner at a periphery of the opening, the upper corner having a corner angle with a first degree of sharpness; b) reducing the sharpness of the corner angle to a second degree; c) after reducing the sharpness, forming a layer of material within the opening and over the etch-stop layer; and d) planarizing the material with a method selective for the material relative to the etch-stop layer to remove the material from over the etch-stop layer while leaving the material within the opening.

Abstract: A method for integrating a thin film resistor into an interconnect process flow where one of the metal layers is used as a hardmask. After a via (42) etch and fill, the thin film resistor material (62) is deposited. The metal interconnect layer (76) is then deposited, including any barrier layers desired. The metal leads (70) are then etched together with the shape of the thin film resistor (60). The metal (76) over the thin film resistor (60) is then removed.

Abstract: The process comprises the steps of forming, on top of a semiconductor material wafer, a holed mask having a lattice structure and comprising a plurality of openings each having a substantially square shape and a side with an inclination of 45° with respect to the flat of the wafer; carrying out an anisotropic etch in TMAH of the wafer, using said holed mask, thus forming a cavity, the cross section of which has the shape of an upside-down isosceles trapezium; and carrying out a chemical vapor deposition using TEOS, thus forming a TEOS layer which completely closes the openings of the holed mask and defines a diaphragm overlying the cavity and on which a suspended integrated structure can subsequently be manufactured.

Abstract: A method for fabricating a gallium nitride single crystal substrate is provided. The method involves: forming a GaN layer on the front side of a sapphire substrate; heating the sapphire substrate at a temperature of 600-1,000° C.; and separating the GaN layer from the sapphire substrate by radiating a laser onto the back side of the sapphire substrate. Before or after forming the GaN layer on the front side of the sapphire substrate, a silicon oxide layer may be formed on the back side of the sapphire substrate. In this case, the silicon oxide layer is removed from the back side of the sapphire substrate in a subsequent process. A high-quality GaN substrate having no crack is attained by the method.

Abstract: This invention relates to a method of film formation in which, when a silicon oxide film (a NSG film: a Non-doped Silicate Glass) is formed on a substrate having a recess by a CVD method using a mixed gas containing a TEOS and ozone, a surface dependency of the substrate is deleted to embed a silicon oxide film into the recess of the surface thereof. The invention comprises a process forming a phosphorus containing insulating film 14 as a base layer on the surface of a substrate 11 and a process forming a silicon-containing insulating film 15 on the phosphosilicate glass film 14 by the chemical vapor deposition method used a mixed gas containing a ozone-containing gas and a silicon-containing gas.

Abstract: A method for forming a SiOC thin film includes the steps of: positioning a substrate in a reactive chamber; and supplying bis-trimethylsilylmethane (termed as ‘BTMSM’, hereinafter) as a source for silicon and carbon and an oxygen gas as a source for oxygen and performing a CVD process. Ssince CH2 is intensively bonded between the silicon atoms of the SiOC thin film, the SiOC thin film is formed having an excellent film quality. And accordingly, the wiring structure of the semiconductor device, which helps fabricate a semiconductor device with an excellent characteristic.

Abstract: A liquid processing apparatus comprises a liquid processing section for applying a liquid processing to wafers W, a carrier delivery section for delivering the carrier housing the wafers W, a carrier stock section capable of storing a plurality of carriers, an interface section for transferring the wafers W between the carrier stock section and the liquid processing section, a carrier transfer device for transferring the carrier, a wafer inspecting device for inspecting the wafers W within the carrier, and a carrier transfer device control section for controlling the carrier transfer device. The carrier transfer device control section controls the carrier transfer device such that the carrier, which has been judged to be capable of a liquid processing on the basis of the result of the inspection of the wafers W, is stored in the carrier stock section, and the liquid processing is started after completion of the inspection of a predetermined number of carriers.

Abstract: The invention comprises methods of depositing silicon oxide material onto a substrate. In but one aspect of the invention, a method of depositing a silicon oxide containing layer on a substrate includes initially forming a layer comprising liquid silicon oxide precursor onto a substrate. After forming the layer, the layer is doped and transformed into a solid doped silicon oxide containing layer on the substrate. In a preferred implementation, the doping is by gas phase doping and the liquid precursor comprises Si(OH)4. In the preferred implementation, the transformation occurs by raising the temperature of the deposited liquid precursor to a first elevated temperature and polymerizing the deposited liquid precursor on the substrate. The temperature is continued to be raised to a second elevated temperature higher than the first elevated temperature and a solid doped silicon oxide containing layer is formed on the substrate.

Abstract: An electrical connector comprises a housing having a retention structure, and a plurality of contacts extending through said housing. Each contact has a medial section, a mounting portion extending from one end of the medial section, and a compressive mating portion extending from another end of the medial section and having a distal end. The retention structure of the housing engages the distal ends of the compressive mating portions of the contacts to preload the contacts. The contacts extend through the housing and exhibit a preload. A fusible element is secured to each respective one of the contacts.

Abstract: An electrical connector is supported by a light conductive plate (2) that is provided between a circuit board (1) and a liquid crystal display (LCD 3) to electrically connect the circuit board (1) and the LCD (3). It comprises a plurality of contact elements (13) that are made of an electrically conductive elastomer and a holder section (10) molded together with the contact elements (13). The cylindrical contact elements (13) have opposite ends projecting from the holder section (10) for spring contact with corresponding circuit traces of the circuit board and the LCD.

Abstract: Disclosed herein are an anisotropically conductive sheet and a connector, which are each capable of easily achieving its accurate electrical connection to a target to be electrically connected even when the target is held and carried by a carrier or the like. The anisotropically conductive sheet comprises an anisotropically conductive functional region part exhibiting conductivity in its thickness-wise direction and an insulating peripheral region part located about the functional region part. The thickness of the functional region part is greater than that of the peripheral region part, and the upper surface of the functional region part is projected from the upper surface of the peripheral region part and connected to the upper surface of the peripheral region part with a difference in level. The difference in level makes a space for inserting a holding tip part of a carrier between the target to be electrically connected and the upper surface of the peripheral region part.

Abstract: An electrical connector is provided comprising a housing adapted to receive a portion of a printed circuit board; an electrical contact connected to the housing; and an electromagnetic interference (EMI) shield connected to the housing. The shield comprises a front end with a hole for passage of a mating electrical connector through the front end into a receiving area of the housing. The shield further comprises a spring finger extending into the hole and a first arm which extends from a rear end of the shield. The arm retains the shield on the housing and is adapted to hold the printed circuit board relative to the housing.

Abstract: A system for employing a 2.5 inch form factor disc drive in computing environments configured for 3.5 inch form factor disc drives includes a 2.5 inch form factor disc drive having a disc drive printed circuit board (PCB). Attached to the PCB is a male connector defining two laterally spaced pin compartments. Located within one of the laterally spaced pin compartments are a plurality of data pins having a pin pitch of approximately 2.54 mm, such that the data pins may mate with the data pins of a conventional ATA connector configured for mating with a 3-in-1 connector of a 3.5 inch form factor disc drive.

Abstract: An electrical junction box for a vehicle provides electrical connection to electrical connectors, fuses and relays. Upper and lower case parts of a casing contain a base circuit, a fuse circuit and a relay circuit. The base circuit has first bus bars and insulation layers stacked together. The first bus bars connect to electrical connectors in use. The fuse circuit has a substrate which is discrete from the base circuit, and second bus bars providing connection to fuses in use. The relay circuit has a substrate, which is discrete from said base circuit, and third bus bars providing connection to relays in use. The second bus bars and the third bus bars are joined to the first bus bars by welding. A compact construction which is easily modified is obtained.

Abstract: A wire board connector has a connector body of generally rectangular form. The body has a pair of side walls and first locating members extending from the side walls. The members are arranged to adjoin a first surface of a wire board having a mounting slot cut into an edge of the board, within which slot the connector body is to be mounted. Second locating members extending from the side walls of the body are arranged to adjoin a second surface of the board opposite the first surface when the connector body is mounted in the mounting slot. The connector body is restrained from movement by the locating members in directions normal to the wire board. Terminals supported by the connector body are provided for establishing contact between a mating connector and components of the wire board.

Abstract: A connector having a mating side (26; 26″) and a rear side (27; 27″) opposing said mating side, provided with at least one cavity (1; 1″) accommodating a terminal (2; 2″), said terminal having a mating portion (8; 60) for mating contact with another terminal of another connector, an intermediate, at least partly flexible portion (14; 14″) connected to said mating portion (8; 8″), a terminal retention portion (16; 16″) connected to said intermediate portion (14; 14″), and a contact portion (45; 45″) connected to said retention portion (16; 16″), said at least one cavity (1; 1″) fixedly accommodating said terminal retention portion (16; 16″) wherein that said cavity (1; 1″) has a cavity retention portion (31; 31″) securing said terminal retention portion (16; 16″), said cavity retention portion (31; 31″) having a cross section comprising a first opening (29; 29″) sized for freely passing said mating portion (8;

Abstract: A bracket for receiving an external electrical device is provided in this invention. The bracket comprises a frame, a door rotatably positioned on the frame, and a metal shielding fixed on the frame. The door comprises a shaft traversing therethrough. The shaft has a driving portion formed thereon. The metal shielding comprises a spring portion registered with the driving portion of the door. The driving portion of the door deforms the spring portion of the metal shielding when the door is rotated due to insertion of the external electric device into the bracket.

Abstract: In a lever-actuated connector, on one end part of a side surface of a connector body (23) is formed a protruding lever insertion rib (27), into which an end (24C) of a lever (24) is inserted, which allows the end (24C) of the lever (24) to rock, and which extends upwardly and downwardly. An upper rib linking part (27A) that joins opposing walls that surround a lever insertion slit (31) is formed larger than a lower rib linking part (27B), and an upper through hole (32) communicates between the upper end surface of the upper rib linking part (27A) and the lever insertion slit (31). By adopting this configuration, when the lever insertion slit (31) is formed, die removal is done upwardly and downwardly, and it is not necessary to use a sliding die, thereby simplifying the die construction for the connector body (23), reducing the cost, and also enabling smooth insertion and fitting together of connectors.

Abstract: In a half-fitting prevention connector (1), a flexible lock arm (5) is formed on a housing (4) of a male connector (2) and has a slide slot (8). A spring member (11), which is attachable to the housing (4), includes a slide member (14) slidably supported by the housing (4), and a compression spring (12), wherein a front end portion of the compression spring (12) is integrally formed with the slide member (14). A rear end portion of the compression spring (12) is fixedly secured to the housing (4). The slide member (14) has an abutment portion (16) abutted against a stopper projection (26) of a housing (21) of a female connector (3), and a guide frame (15) which is slidably guided in and along the slide slot (8).

Abstract: The present invention provides an inexpensive input device having excellent operability. A step-wise gap is formed on a metallic basement, with a flat input member disposed on an upper stage and a filmy board on a lower stage. On the filmy board is disposed a push type input member, which is secured directly to the basement. At the step-wise gap of the basement is formed a through hole, in which a part of the filmy board is inserted. The inserted filmy board is connected to the flat input member and a computer.

Abstract: In a half-fitting prevention connector (1), a resilient member (20; 25; 35) attachable to a housing (14) of a female connector (3) is employed. A longitudinal direction of the resilient member (20; 25; 35) is substantially perpendicular to a connector fitting direction of the female connector (3). A central portion of the resilient member (20; 25; 35) is fixedly secured to the housing (14) by a fixing mechanism (21; 30; 40), so that opposite end portions of the resilient member (20; 25; 35) are flexible. A pair of abutment portions (9) are formed on a flexible lock arm (5) formed on a housing (4) of a male connector (2). When the female connector (3) and the male connector (2) are fitted to each other, the abutment portions (9) are abutted against the opposite end portions of the resilient member (20; 25; 35).

Abstract: In a half-fitting prevention connector (1), a compression spring (20) is employed as a resilient member for preventing half-fitting between a male connector (2) and a female connector (3). The compression spring (20) is attachable to a housing (26) of the female connector (3) and includes a first bent portion (21) formed into a substantially U-shape by bending a strip-shaped plate, a second bent portion (23) continuing from the first bent portion (21) and formed into a substantially V-shape by bending the strip-shaped plate, a fixing hole (24) located at a rear portion of the compression spring (20) and retained by a fixing projection (32), and a fixing rolled portion (25) located at the rear portion of the compression spring (20) and retained by pressing pieces (33).

Abstract: An inertial locking connector is provided, by which the appropriation of a normal connector is improved and an incomplete engagement of the connectors is securely prevented from occurring. The inertial locking connector includes: a first connector housing provided with a locking arm having a locking projection; and a second connector housing provided with an engaging projection, which engages with the locking projection, wherein upon engaging of the first and second connecor housings, a front end face of the locking projection is situated facing a perpendicular front end face of the second connector housing and the front end face of the locking projection abuts against the front end face of the second connector housing. Thereby, the inertia force upon the engagement of the connectors is exhibitted.

Abstract: A electrical connector suitable for aligning and connecting a high-density wire bundle to a receiving member. The wire bundle is attached to an adapter positioned within a mounting location containing electronically controlled, adjustable pushrods which are used to make the fine lateral and rotational adjustments to the adapter. A control unit detects the position of the adapter within the mounting location and makes fine adjustments to the adapter position as necessary to insure proper alignment and contact.

Abstract: A mounting assembly for a product, such as a video camera comprises a shroud for holding a security system sensor and a fastener for attaching the shroud to the product so as to hold the sensor against the product. The shroud further comprises a mounting flange, a cavity for holding electrical connectors, and passageways for cables. The shroud has an opening for receiving electrical connectors and a cover therefor to limit access to the electrical connectors. A fatigue reducing grommet is attached to a main cable at its entry point into the shroud. The shroud includes a seat for receiving the sensor, the sensor being connected to a security system via the electrical connectors. A fastener extends through a flange of the shroud, the cover and the sensor and into the product. An optional power cable carries power from the main cable to power the product. Thereby the sensor is securely attached to the product and the cables and connectors for the security system are neatly tucked away in the shroud.

Abstract: At least two connector housings (10) are mounted on a mounting member by one stay (S). The connector housings (10) are connected by engaging a first coupling portion (18) of one connector housing (10) with a second coupling portion (28) of the other connector housing (10). First and second locking portions (16, 26) of the respective connector housings (10) engage and resist separation of the connector housings (10). The connector housings (10) are disengaged by elastically deforming an elastic locking piece (22) to disengage the locking portions (16, 26) and to disengage the coupling portions (18, 28). One of the connected connector housing (10) is mounted on a stay (S) by inserting the stay (S) into an insertion space (23) and locking the stay (S) with a stay locking portion (24).

Abstract: Disclosed is a connector receptacle having an outer conductor inserted in its housing, the outer conductor having an insulator inserted in its inner space, and the insulator having a terminal piece embedded therein for connecting with a ounter part. The housing has a longitudinal slot made therein, and the outer conductor comprises a split conductor body having two opposite flap projections formed on its joint edges. The conductor body is inserted in the housing with the opposite flap projections press-fitted in the slot. This arrangement assures that complete shielding be provided and that the receptacle parts be tightly assembled.

Abstract: An angle type plug connector 1 has an insulated body 2 for insertion into a mating connector, and contacts 3 fixed in the insulated body and each having at its one end a finger 9 for contact with a foreign contact held in the mating connector, each contact having at its other end a leg 10 adjoined to one electric wire 36 in a signal transmission cable 35. The connector also has an angle type shield 32 consisting of a pair of first and second metallic covers, the first cover 4 enclosing outer portions of the insulated body 2, and the second cover 5 enclosing the contacts' legs 10 and the wires' bare end portions, so that the second cover extends at a right angle relative to the first cover.

Abstract: An electric wire includes a conductive core wire and an insulative sheath covering the core wire. An elastic waterproof plug is fit with the electric wire such that a first longitudinal end portion thereof is fit with the core wire, and a second longitudinal end portion thereof is fit with the sheath. A conductive terminal is electrically connected with the electric wire, and inserted into a terminal insertion hole formed in the waterproof connector housing together with the waterproof plug to seal the terminal insertion hole. The terminal includes a first clamping member which clamps over the first end portion of the waterproof plug, and a second clamping member which clamps over a part of the core wire exposed from the first end portion of the waterproof plug.

Abstract: An electrical connector assembly (1) comprises an insulative housing (10), a plurality of terminals (30, 31) within the housing and a shield (20) covering the housing. The shield comprises a first part (21), a second part (22) and a third part (23). A pair of hooks (216) extends downwardly and forwardly from a front and lower end of the first part. A pair of ears (223) is formed on opposite ends of a front edge of a top face of the second part and engages with the hooks. A spacing slot (13) and a hole (124) are defined in the housing. A pair of latches (225) separately extend from the top and a lower face of the second part and engage respectively with the spacing slot and the hole.

Abstract: An electrical connection device including a body in the form of a cage having a bearing plate for a bared conductor. The bearing plate has a projection on its inside face and a retaining rim. A curved elastic wall opposite the bearing plate has its convex side facing toward the interior of the cage. In use, a conductor is bent into a U-shape with two branches and a loop, the loop is inserted between the projection and the rim, and the branches then bear against internal lateral walls adjacent the bearing plate.

Abstract: In a compact printed circuit board connector adapted to be mounted at a printed circuit board and intended to be soldered to the printed circuit board simultaneously with other electrical components in a heating oven by using a solder paste for soldering the components, a channel is provided which extends through the interior of the printed circuit board connector. The channel serves for circulating a flow of heated gas through the interior of the connector in order to quickly achieve the required soldering temperature at the soldering ends of the contact elements.