Patents Issued in September 14, 2004
  • Patent number: 6791069
    Abstract: A heater for fusing toner images onto recording paper is provided. The heater includes a supporting base that has an upper surface and a lower surface. The base has a relatively low thermal conductivity. The heater also includes a heating element formed on the upper surface of the base. A heat conductor is provided on the upper or lower side of the base. The heat conductor has a thermal conductivity greater than the thermal conductivity of the base.
    Type: Grant
    Filed: June 25, 2002
    Date of Patent: September 14, 2004
    Assignee: Rohm Co., Ltd.
    Inventors: Teruhisa Sako, Takaya Nagahata, Hiroaki Hayashi
  • Patent number: 6791070
    Abstract: A method of performing a simmer cooking operation in a microwave oven is based on detected levels of humidity from a sensor and an algorithm automatically calculating a cooking time such that a desired cooking operation is optimally performed. A third heating operation is performed at about 30% of the maximum power level of the microwave oven. The third heating operation is performed for an amount of time equal to a sum of an amount of time during which first and second heating operations are performed adjusted by a predetermined constant. The total heating time is calculated and controlled by adding the amount of time during which the third heating operation is performed to the time during which the first and second heating operations are performed.
    Type: Grant
    Filed: July 31, 2003
    Date of Patent: September 14, 2004
    Assignee: LG Electronics Inc.
    Inventor: Kwang Hwa Kim
  • Patent number: 6791071
    Abstract: An apparatus and method for measuring an aperture of a near-field optical probe is provided. The apparatus includes a light source, an optical detector, and a filter. The light source radiates light to the near-field optical probe. The optical detector is positioned before the near-field optical probe and receives the light transmitted through the near-field optical probe to detect light intensity. The filter is disposed between the light source and the optical detector and transmits only light of wavelengths in a specific mode from the light transmitted through the near-field optical probe. Thus, an aperture diameter of the near-field optical probe can accurately be measured in real-time without damaging the near-field optical probe.
    Type: Grant
    Filed: September 13, 2002
    Date of Patent: September 14, 2004
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Gi-myung Woo, Petrov Nikolai, Myung-bok Lee
  • Patent number: 6791072
    Abstract: An image sensor module includes a flexible support mounted with a flexible substrate that includes optical circuitry on its surface. The substrate is formed sufficiently thin so that it can be shaped into a curved configuration. The combination of substrate and support can be mounted inside an optically transmissive housing and shaped into a variety of curved configurations that match the curved focal surface of a lens. In another approach, the support is a rigid support having a curved surface contour that substantially corresponds to a curved focal surface of a lens. The substrate is coupled with the curved surface contour of the rigid support and mounted with a lens such that the optical circuitry of the substrate obtains a curve that substantially matches that of the focal surface of the lens. Methodologies for fabricating the above modules are also disclosed.
    Type: Grant
    Filed: May 22, 2002
    Date of Patent: September 14, 2004
    Assignee: National Semiconductor Corporation
    Inventor: Ashok Prabhu
  • Patent number: 6791073
    Abstract: A baffle containing a plurality of small apertures is mounted on the receiver aperture of an optical receiver, such as a wireless optical telecommunication system receiver. The baffle attenuates ambient radiation that may interfere with the optical receiver. The baffle includes a plurality of apertures that have their axes substantially parallel to the optical axis of the receiver.
    Type: Grant
    Filed: December 21, 2000
    Date of Patent: September 14, 2004
    Assignee: Terabeam Corporation
    Inventors: John A. Bell, John J. Schuster
  • Patent number: 6791074
    Abstract: A light curtain system is provided for establishing a protective light curtain for a tool in a system for processing objects such as wafers, and is particularly provided as a safety device for an operator of the tool. The light curtain system includes a first light curtain component of invisible light beams. A receiver and an emitter form edges of the protective light curtain from the invisible light beams. In addition, a second light curtain component of visible light beams is provided. The visible light beams are directed and transmitted adjacent and in parallel to the light beams of invisible light for forming a part of the protective light curtain and for making the protective light curtain visible for an operator. The second light curtain component of visible light beams is activated at least temporarily.
    Type: Grant
    Filed: June 28, 2002
    Date of Patent: September 14, 2004
    Assignee: Infineon Technologies SC300 GmbH & Co. KG
    Inventors: Sven Hahn, Michael Lering, Mathias Schulz
  • Patent number: 6791075
    Abstract: The present invention relates to a method for extracting individual band components from heavily overlapping bands. The method is based on first derivative-second derivative plots of an experimental spectrum and consists of two stases. The first stage is concerned with the geometric approach that estimates a set of values for the parameters of a component band in the overlapping bands, and repeats band decomposition of the remaining bands in the same manner after removing the estimated band from the overlapping bands. The second stage is to minimize the difference between the profiles of the estimated band and its complementary band by a least-squares optimization, and then to determine the optimum values of the band parameters.
    Type: Grant
    Filed: February 13, 2001
    Date of Patent: September 14, 2004
    Inventor: Katsue Koashi
  • Patent number: 6791076
    Abstract: An image sensor package includes an image sensor, a window, and a molding, where the molding includes a lens holder extension portion extending upwards from the window. The lens holder extension portion includes a female threaded aperture extending from the window such that the window is exposed through the aperture. A lens is supported in a threaded lens support. The threaded lens support is threaded into the aperture of the lens holder extension portion. The lens is readily adjusted relative to the image sensor by rotating the lens support.
    Type: Grant
    Filed: October 31, 2002
    Date of Patent: September 14, 2004
    Assignee: Amkor Technology, Inc.
    Inventor: Steven Webster
  • Patent number: 6791077
    Abstract: An improved mass analyzer capable of parallel processing one or more analytes is set fourth. The mass analyzer comprises a mass filter unit having a plurality of ion selection chambers disposed in parallel with one another. Each of the plurality of ion selection chambers respectively includes an ion inlet lying in an inlet plane and an ion outlet lying in an outlet plane. The mass analyzer further includes a plurality of electrodes disposed in the ion selection chambers and at least one RF signal generator connected to the plurality of electrodes to produce a non-rotating, oscillating electric field in each ion selection chambers. A plurality of ion injectors are each coupled to inject an ion beam into the ion inlet of a respective ion selection chambers. The ions meeting predetermined m/Q requirements pass through the ion selection chambers to contact corresponding detection surfaces of an ion detector array.
    Type: Grant
    Filed: August 19, 2003
    Date of Patent: September 14, 2004
    Assignee: Beckman Coulter, Inc.
    Inventor: Vincent R. Farnsworth
  • Patent number: 6791078
    Abstract: A mass spectrometer comprising an ion mobility separator for separating ions according to their ion mobility is disclosed. The ion mobility separator comprises a plurality of electrodes and one or more transient DC voltages or one or more transient DC voltage waveforms are progressively applied to the electrodes so that ions having a certain ion mobility are separated from other ions having different ion mobilities.
    Type: Grant
    Filed: June 26, 2003
    Date of Patent: September 14, 2004
    Assignee: Micromass UK Limited
    Inventors: Kevin Giles, John Brian Hoyes, Steve Pringle, Jason Lee Wildgoose
  • Patent number: 6791079
    Abstract: A mass spectrometer of the present invention is based on the use of quadrupole lenses with angular gradient of the electrostatic field. The device consists of an ion source connected to an ion mass separation chamber that contains a plurality of sequentially arranged electrostatic quadrupole lenses which generate a helical electrostatic field for sending ions along helical trajectories in a direct and return stroke. Scattering of positions of points of return is reduced by means of electrostatic mirrors located at the end of the direct stroke, while ions of different masses perform their return strokes along helical trajectories different from those of the direct strokes due to the use of a magnetic and/or electrostatic mirrors. An ion-electron emitting screen is installed on the path of ions in the reverse stroke, and positions of collision of the ions with the ion-electron emitting screen over time and space are detected with the use of micro-channel plate detectors.
    Type: Grant
    Filed: January 29, 2002
    Date of Patent: September 14, 2004
    Inventor: Yuri Glukhoy
  • Patent number: 6791080
    Abstract: An apparatus and a method which produce a pulse of ions, generate a transient electric field correlated in time with a duration of the pulse of ions, receive the pulse of ions into the transient electric field, and collect the ions from an ion drift region of the transient electric field into a gas dynamic flow region of the mass analyzer. As such, an apparatus for transferring ions into a mass analyzer includes an ion source configured to generate the pulse of ions, a transient electric field device configured to receive the pulse of ions and generate the transient electric field, and an ion collector configured to collect the ions from the ion drift region and transfer the ions into the mass analyzer.
    Type: Grant
    Filed: February 19, 2003
    Date of Patent: September 14, 2004
    Assignee: Science & Engineering Services, Incorporated
    Inventors: Vladimir M. Doroshenko, Victor V. Laiko, Phillip V. Tan
  • Patent number: 6791081
    Abstract: A method for measuring porosity of nanoporous materials is provided using atomic force microscopy (AFM). A surface topology map with sub-atomic resolution is created using AFM wherein the pore shape and size can be determined by measuring the pores that intersect the top or fracture surface. For porous materials requiring more accurate measurements, small scan areas with slow scan speed and fine AFM tips are used and a general estimation on distribution can be made from a sample area.
    Type: Grant
    Filed: March 27, 2002
    Date of Patent: September 14, 2004
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Robert Matthew Ulfig, Suzette K. Pangrle, Alline F. Myers, Jeremias D. Romero
  • Patent number: 6791082
    Abstract: In order to accurately monitor changes in exposure conditions (changes in exposure level and focus) at a product wafer level during lithography, changes in exposure conditions can be calculated by acquiring electron beam images of a first pattern portion and a second pattern portion different from one another in terms of the tendency of the changes in dimensional characteristic quantities against the changes in exposure conditions, then calculating the respective dimensional characteristic quantities of the first pattern portion and the second pattern portion, and applying these dimensional characteristic quantities to the models which logically link the exposure conditions and the dimensional characteristic quantities. Hereby, it is possible to supply the process conditions change monitoring systems and methods that enable output of accurate changes in exposure level and focus.
    Type: Grant
    Filed: January 22, 2003
    Date of Patent: September 14, 2004
    Assignee: Hitachi, Ltd.
    Inventors: Osamu Komuro, Hidetoshi Morokuma, Chie Shishido
  • Patent number: 6791083
    Abstract: An apparatus for preventing distortion to critical dimension line images formed by a SEM under the influence of external electro-magnetic emissions generating by neighboring manufacturing equipment. The external emission causes a high three sigma A/C component. The correcting apparatus includes an external shielding coil mounted to the column housing of the SEM. A control electro-emission driver is mounted to the external shielding coil in which a variable voltage divider having a transformer with a variable resistor. The variable resistor is adjusted varying the amplitude of the sine wave of the A/C signal thus controlling the electro-emission driver while reducing the effects of the three sigma A/C component.
    Type: Grant
    Filed: July 29, 2002
    Date of Patent: September 14, 2004
    Assignee: Chartered Semiconductor Manufacturing Ltd.
    Inventors: Kevin Chan Ee Peng, Yelehanka Ramachandramurthy Pradeep, Chua Thow Phock
  • Patent number: 6791084
    Abstract: A width-measurement method of reducing or eliminating an error in measurement of a width of an object on a sample resulting from the dimension of the beam diameter, wherein a width-measured value of the object to be width-measured which has been obtained on the basis of a secondary signal obtained from secondary particles emitted from the sample having thereon the object to be width-measured is corrected with a value with respect to a dimension value of a beam diameter.
    Type: Grant
    Filed: September 19, 2002
    Date of Patent: September 14, 2004
    Assignee: Hitachi High-Technologies Corporation
    Inventors: Goroku Shimoma, Tadashi Otaka, Mitsugu Sato, Hideo Todokoro, Shunichi Watanabe, Tadanori Takahashi, Masahiro Kawawa, Masanori Gunji, Terumichi Nishino
  • Patent number: 6791085
    Abstract: A device for generating an image from an IR radiation including a plurality of polarized heat detectors (2) having specific electric resistances distributed over the focal plane of a detection module so as to deliver a signal representing a detected IR radiation. A read module (8) converts the electric signal into a signal usable by an image processing block (18). An electric signal compensation module (10) having a first branch (12) for obtaining a first thresholding to extract a first constant value signal due to the polarization of the heat detectors. The compensation module (10) includes a second branch (30) for obtaining a second thresholding to extract from the first thresholding signal a second low-level signal due to the dispersion of the electric resistances of the heat detectors and/or to the fluctuations in the temperature of the focal plane of the detection module.
    Type: Grant
    Filed: November 27, 2001
    Date of Patent: September 14, 2004
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Jean-Luc Martin, Eric Mottin, Arnaud Laflaquiere
  • Patent number: 6791086
    Abstract: A robust, compact spectrometer apparatus for determining respective concentrations or partial pressures of multiple gases in a gas sample with single as well as multiple and even overlapping, absorption or emission spectra that span a wide spectral range.
    Type: Grant
    Filed: August 23, 2002
    Date of Patent: September 14, 2004
    Assignee: Respironics, Inc.
    Inventor: James T Russell
  • Patent number: 6791087
    Abstract: A differential infrared detector has: a detection element which detects infrared radiation in a predetermined detection area, converts a radiation energy thereof into an electric signal, and outputs the signal; and a discrimination circuit which calculates a variation amount of the radiation energy, based on the output signal, and generates a human body detection signal if the variation amount is equal to or greater than a predetermined level. This differential infrared detector comprises: an ambient temperature detection circuit which generates a voltage, based on an ambient temperature in the detection area; and a sensitivity correction circuit which is arranged to increase detection sensitivity of the output signal produced by the detection element if the ambient temperature is within the predetermined temperature range, based on the voltage.
    Type: Grant
    Filed: May 24, 2002
    Date of Patent: September 14, 2004
    Assignee: Optex Co., Ltd.
    Inventor: Yoshiharu Okumura
  • Patent number: 6791088
    Abstract: A leak detector using an infrared emitter and pyroelectric sensor to form an instrument for identifying the presence and concentration of a selected material type gas compound, such as a refrigerant gas compound within a given sample, such as a sample of ambient air. For the detection, a radiation flux coming from an infrared emitter penetrates the sample, which is analyzed spectrally, and results in a wave length-specific signal being generated at the output of the detector. By controlling the type of optical filter, the radiation energy is controlled at a selected wavelength, to ensure coverage of all selected compounds. For refrigerants, the selected wavelength can be between approximately 8 to approximately 10 microns in the wavelength range. This selected wavelength obscures other signals, thus minimizing false alarms. By not chopping or pulsing the emitter, the leak detector has a faster response time with no adverse impacts on the accuracy of the compound material being detected.
    Type: Grant
    Filed: May 3, 2002
    Date of Patent: September 14, 2004
    Assignee: Twin Rivers Engineering, Inc.
    Inventors: William J. Williams, II, Glenn A. Dejong
  • Patent number: 6791089
    Abstract: An apparatus and method for identifying a chemical compound. A neutron source delivers neutrons into the chemical compound. The nuclei of chemical elements constituting the chemical compound emit gamma rays upon interaction with the neutrons. The gamma rays are characteristic of the chemical elements constituting the chemical compound. A spectrum of the gamma rays is generated having a detection count and an energy scale. The energy scale is calibrated by comparing peaks in the spectrum to energies of pre-selected chemical elements in the spectrum. A least-squares fit completes the calibration. The chemical elements constituting the chemical compound can be readily determined, which then allows for identification of the chemical compound.
    Type: Grant
    Filed: March 28, 2000
    Date of Patent: September 14, 2004
    Assignee: Bechtel BWXT Idaho, LLC
    Inventors: Augustine J. Caffrey, Kennth M. Krebs
  • Patent number: 6791090
    Abstract: A Compton Deconvolution Camera (CDC) comprises multiple detection layers, position sensing logic to determine positions of events in each detection layer, a coincidence detector to detect pairs of coincident events resulting from Compton scattering, and processing logic. For each of multiple subsets of one of the detection layers, the processing logic associates data representing detected events with a distribution of corresponding events in another detection layer. The processing logic applies a deconvolution function to localize probable source locations of incident photons, computes probable Compton scattering angles for event pairs, and uses the probable source locations to reconstruct an image. Each of the detection layers may comprise an array of solid-state ionization detectors, or a scintillator and an array of solid-state photodetectors.
    Type: Grant
    Filed: April 30, 2001
    Date of Patent: September 14, 2004
    Assignee: Koninklijke Philips Electronics N.V.
    Inventors: Gregory Sharat Lin, Stuart J. Swerdloff
  • Patent number: 6791091
    Abstract: A digital x-ray imaging device and method. The imaging device comprises a top electrode layer; a dielectric layer; a sensor layer comprising a photoconductive layer and a plurality of pixels, each pixel comprising a charge-collecting electrode; a thin film transistor (TFT) readout matrix connected to the charge-collecting electrodes; and a variable power supply adapted to provide a range of voltages between the top electrode layer and the TFT readout matrix. The variable power supply may comprise a programmable power supply. The method comprises varying the voltage between the top electrode layer and the TFT readout matrix of a TFT-based direct digital x-ray imaging device to provide an acceptable signal-to-noise ratio over a greater range of exposures than provided at a single voltage. The method may be particularly useful in non-destructive testing applications.
    Type: Grant
    Filed: June 19, 2001
    Date of Patent: September 14, 2004
    Inventors: Brian Rodricks, Michael G. Hoffberg
  • Patent number: 6791092
    Abstract: A transmission meter (1) and a method for measuring the transmittance of a fluid, the meter (1) comprises an analysis chamber for passage of the fluid therethrough, means for receiving an electromagnetic source (9) within said chamber and three sensors (D1, D2 and D3) each configured to measure the output from said source (9), wherein each of the three sensors (D1, D2 and D3) are located at different distances from the source (9). The transmission meter may be used in a disinfection system either to measure the transmittance of the untreated water or to measure the transmittance of the water as it is purified.
    Type: Grant
    Filed: February 27, 2001
    Date of Patent: September 14, 2004
    Assignee: Hanovia Limited
    Inventor: David John Hamilton
  • Patent number: 6791093
    Abstract: The invention provides a technique for correcting gamma ray intensities detected to account for variation in attenuation effects with energy. The corrected intensity values enable more accurate isotopic analysis to be conducted and render such techniques applicable to low level emission cases. The technique is particularly useful in investigate waste materials with a gamma emitting content which needs to be determined. The attenuation is corrected for using a bi-modal function to account for the attenuation effects arising from low and high atomic mass components of the material in which the emitters are present.
    Type: Grant
    Filed: June 4, 2003
    Date of Patent: September 14, 2004
    Assignee: British Nuclear Fuels PLC
    Inventors: John Thomas Caldwell, Stephanie Ann Jones, Matthew Robert Newell
  • Patent number: 6791094
    Abstract: A method and apparatus for determining a direction or parallelism of a beam. The beam can be any type of beam, including uncharged or charged particle beams or electromagnetic radiation beams. The beam can have any desired size or shape and can be scanned or fixed in place. A direction or parallelism of the beam can be determined by adjusting an intensity profile of at least a portion of the beam at a first position. The adjusted intensity profile can be formed, for example, by blocking a portion of the beam at the first position. The adjusted intensity profile can be formed by a special purpose device, such as a mask, adjustable aperture, etc., or by another device having a separate purpose. For example, a beam modifier used to form the adjusted intensity profile can be a detector used to determine a measure of uniformity of the beam.
    Type: Grant
    Filed: June 6, 2000
    Date of Patent: September 14, 2004
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Joseph C. Olson, Donna L. Smatlak, Paul Daniel
  • Patent number: 6791095
    Abstract: A method for inspecting a semiconductor wafer using an SEM having a nominal focal plane and operable for guiding a beam. The SEM having a stage movable in each of an X-, Y-, and Z-direction, including moving the SEM stage in the XY-direction to a first location for inspection, optically sensing the location of the top surface of an area in relation to the focal plane of the stage, adjusting the position of the stage in the Z-direction so that the top surface of the area is substantially at the focal plane, inspecting the areas, and moving the stage in the XY-direction to the next location such that the next area is under the SEM beam for inspection. The Z-stage using a non-contact optical sensor to provide feedback to drive a plurality of piezoelectric actuator to move the wafer to the focal plane.
    Type: Grant
    Filed: March 21, 2002
    Date of Patent: September 14, 2004
    Assignee: Hermes-Microvision (Taiwan) Inc.
    Inventors: Chung-Shih Pan, Yi Xiang Wang, Anil Desai
  • Patent number: 6791096
    Abstract: In order to accurately monitor changes in exposure conditions (changes in exposure level and focus) at a product wafer level during lithography, changes in exposure conditions can be calculated by acquiring electron beam images of a first pattern portion and a second pattern portion different from one another in terms of the tendency of the changes in dimensional characteristic quantities against the changes in exposure conditions, then calculating the respective dimensional characteristic quantities of the first pattern portion and the second pattern portion, and applying these dimensional characteristic quantities to the models which logically link the exposure conditions and the dimensional characteristic quantities. Hereby, it is possible to supply the process conditions change monitoring systems and methods that enable output of accurate changes in exposure level and focus.
    Type: Grant
    Filed: February 22, 2002
    Date of Patent: September 14, 2004
    Assignee: Hitachi, Ltd.
    Inventors: Osamu Komuro, Hidetoshi Morokuma, Chie Shishido
  • Patent number: 6791097
    Abstract: A charged particle beam apparatus includes a charged particle beam source for directing a charged particle beam along a beam path in a downstream direction to a target, and a processing station that defines a target chamber. The processing station includes a chamber divider which divides the target chamber into upstream and downstream regions during charged particle beam processing of the target, the target being located in the downstream region. The divider has an aperture therethrough sized to permit passage of the ion beam to the target without substantial blockage and to limit backflow of gas into the upstream region of the chamber. The divider minimizes the beam volume which is exposed to extraneous species generated at the target and thereby reduces the probability of beam-altering collisions.
    Type: Grant
    Filed: January 16, 2002
    Date of Patent: September 14, 2004
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Jay T. Scheuer, Anthony Renau, Eric D. Hermanson
  • Patent number: 6791098
    Abstract: A multi-input, multi-output vibration control system for a lithography system. The system provides an actuator, and a sensor useful for controlling vibrations in systems for fabricating electronics equipment. The system includes a processor programmed with a multi-input, multi-output control technique such as a linear quadratic Gaussian, H-infinity or mu synthesis. The actuator may comprise one or more plates or elements of electroactive material bonded to an electroded sheet.
    Type: Grant
    Filed: March 9, 2001
    Date of Patent: September 14, 2004
    Assignee: Cymer, Inc.
    Inventors: Baruch Pletner, Richard Perkins, Leonard Lublin
  • Patent number: 6791099
    Abstract: An optical inspection apparatus and method is provided that utilizes both linear and nonlinear optical phenomena to detect defects. Embodiments include irradiating a portion of the surface of an article, such as a semiconductor device, with a light beam, such as a scanning laser at an incident wavelength. The light emanating from the irradiated surface portion is then separated into light at the incident wavelength and light at one or more predetermined non-incident wavelengths, as by a diffraction grating, prism or filters. The light at the incident and nonincident wavelengths is sent to separate detectors, such as photomultipliers (PMT), which respectively convert the detected linear optical phenomena (representing, e.g., surface topography) into an electrical signal, and the detected nonlinear optical phenomena, such as fluorescence, Raman scattering and/or second harmonic generation, into electrical signals representing, e.g., chemical composition and material interfaces.
    Type: Grant
    Filed: February 14, 2001
    Date of Patent: September 14, 2004
    Assignee: Applied Materials, Inc.
    Inventors: Daniel I. Some, Silviu Reinhorn, Gilad Almogy
  • Patent number: 6791100
    Abstract: An input document detecting method includes the steps of: (a) modulating a light source of a relative-type optical sensor with a coded digital/analog signal; (b) emitting a code-modulated light beam and directing it toward the object; (c) collecting the reflected code-modulated light beam with a receiver portion of the optical sensor; (d) forwarding the signal from the reflected light beam through an AC amplifier; and (e) feeding the amplified signal to a decoder. Also included is a system (10) for detecting the presence of an object including: a) a modulator (11) and a driver (12); b) a reflective-type optical sensor (13) with an analog output, and a lightsource; an IR transmitter and a receiver portion with a built-in IR filter for collecting a reflected code-modulated light beam; c) a high gain AC amplifier (14) for amplifying the signal from the reflected light beam; and d) a decoder (15).
    Type: Grant
    Filed: August 19, 2002
    Date of Patent: September 14, 2004
    Assignee: Eastman Kodak Company
    Inventor: Wai Hung Dye
  • Patent number: 6791101
    Abstract: Methods and apparatus for directing radiation to and from a sample to be scanned. In one example, first radiation propagating along a first axis is reflected off of the first axis so as to impinge on the sample. In response to the first radiation, the sample emits second radiation, which is directed to a detector. In one aspect, the second radiation is received directly from the sample by a reflector, which reflects the second radiation such that it travels substantially through air to impinge on the detector. In another aspect, the second radiation is directed such that it travels toward the detector in a direction having a significant vector component parallel to the first axis. In yet another aspect, a detection surface of the detector is oriented essentially perpendicular to the first axis and adapted to detect at least some of the second radiation traveling in a direction non-parallel to the first axis.
    Type: Grant
    Filed: June 5, 2003
    Date of Patent: September 14, 2004
    Assignee: Orex Computed Radiography Ltd.
    Inventor: Jacob Koren
  • Patent number: 6791102
    Abstract: Briefly, in accordance with an embodiment of the invention, a phase change memory and a method to manufacture a phase change memory is provided. The phase change memory may include a phase change material having a bottom portion, a lateral portion, and a top portion. The phase change memory may further include a first electrode material contacting the bottom portion and the lateral portion of the phase change material and a second electrode material contacting the top portion of the phase change material.
    Type: Grant
    Filed: December 13, 2002
    Date of Patent: September 14, 2004
    Assignee: Intel Corporation
    Inventors: Brian G. Johnson, Charles H. Dennison
  • Patent number: 6791103
    Abstract: A light-emitting gallium nitride-based compound semiconductor device of a double-heterostructure. The double-heterostructure includes a light-emitting layer formed of a low-resistivity InxGa1−xN (0<x<1) compound semiconductor doped with p-type and/or n-type impurity. A first clad layer is joined to one surface of the light-emitting layer and formed of an n-type gallium nitride-based compound semiconductor having a composition different from the light-emitting layer. A second clad layer is joined to another surface of the light-emitting layer and formed of a low-resistivity, p-type gallium nitride-based compound semiconductor having a composition different from the light-emitting layer.
    Type: Grant
    Filed: August 27, 2002
    Date of Patent: September 14, 2004
    Assignee: Nichia Corporation
    Inventors: Shuji Nakamura, Takashi Mukai, Naruhito Iwasa
  • Patent number: 6791104
    Abstract: Semiconductor optoelectronic devices such as diode lasers are formed on GaAs with an active region with a GaAsN electron quantum well layer and a GaAsSb hole quantum well layer which form a type II quantum well. The active region may be incorporated in various devices to provide light emission at relatively long wavelengths, including light emitting diodes, amplifiers, surface emitting lasers and edge-emitting lasers.
    Type: Grant
    Filed: September 26, 2002
    Date of Patent: September 14, 2004
    Assignee: Wisconsin Alumni Research Foundation
    Inventors: Nelson Tansu, Luke J. Mawst
  • Patent number: 6791105
    Abstract: An optoelectronic device and a method of manufacturing the same which the optoelectronic effect such as light emission or light reception can be increased by forming a dual-structural nano dot to enhance the confinement density of electrons and holes are provided. The optoelectronic device comprises an electron injection layer, a nano dot, and a hole injection layer. The nano dot has a dual structure composed of an external nano dot and an internal dot. The method of manufacturing the optoelectronic device comprises the steps of forming an electron injection layer on a semiconductor substrate; growing nano dot layer on the electron injection layer by an epi-growth method; heating the nano dot layer so that the nano dot has a dual structure composed of an external nano dot and an internal nano dot; and forming a hole injection layer on the overall structure.
    Type: Grant
    Filed: December 24, 2002
    Date of Patent: September 14, 2004
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Kyu Hwan Shim, Young Joo Song, Sang Hoon Kim, Jin Yeong Kang
  • Patent number: 6791106
    Abstract: An aspect of the present invention includes a first conductive type semiconductor region; a gate electrode formed on the first conductive type semiconductor region; a channel region formed immediately below the gate electrode in the first conductive type semiconductor region; and a second conductive type first diffusion layer constituting source/drain regions formed at opposite sides of the channel region in the first conductive type semiconductor region, the gate electrode being formed of polycrystalline silicon-germanium, in which a germanium concentration is continuously increased from a drain region side to a source region side, and an impurity concentration immediately below the gate electrode in the first conductive type semiconductor region being continuously increased from the source region side to the drain region side in accordance with the germanium concentration in the gate electrode.
    Type: Grant
    Filed: April 23, 2003
    Date of Patent: September 14, 2004
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Kazuya Ohuchi, Hironobu Fukui
  • Patent number: 6791107
    Abstract: The invention relates to a phase-change memory device that uses SOI in a chalcogenide volume of memory material. Parasitic capacitance, both vertical and lateral, are reduced or eliminated in the inventive structure.
    Type: Grant
    Filed: January 3, 2003
    Date of Patent: September 14, 2004
    Assignee: Ovonyx, Inc.
    Inventors: Manzur Gill, Tyler Lowrey
  • Patent number: 6791108
    Abstract: The invention involves tunneling tips to their conducting surface, and specifically the deposition of a monolayer of fullerene C60 onto the conducting plate surface to protect the tunneling tip from contact. The Fullerene C60 molecule is approximately spherical, and a monolayer of fullerene has a thickness of one nanometer, such that a monolayer thereby establishing the theoretical distance desired between the MEMS' tunneling tip and the conducting plate. Exploiting the electrical conductivity of C60, the tip can be accurately positioned by simply monitoring conductivity between the fullerene and the tunneling tip. By monitoring the conductivity between the tip and the fullerene layer as the tip is brought in proximity, the surfaces can be brought together without risk of contacting the underlying conducting surface.
    Type: Grant
    Filed: June 20, 2001
    Date of Patent: September 14, 2004
    Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
    Inventor: John D. Olivas
  • Patent number: 6791109
    Abstract: A finger SQUID qubit device and method for performing quantum computation with said device is disclosed. A finger SQUID qubit device includes a superconducting loop and one or more superconducting fingers, wherein the fingers extend to the interior of said loop. Each finger has a mesoscopic island at the tip, separated from the rest of the finger by a Josephson junction. A system for performing quantum computation with the finger SQUID qubit device includes a mechanism for initializing, entangling, and reading out the qubits. The mechanism may involve passing a bias current across the leads of the superconducting loop and a mechanism for measuring a potential change across the leads of the superconducting loop. Furthermore, a control system includes a mechanism for addressing specific qubits in a quantum register of finger SQUID devices.
    Type: Grant
    Filed: December 18, 2001
    Date of Patent: September 14, 2004
    Assignee: D-Wave Systems, Inc.
    Inventors: Alexander Tzalenchuk, Zdravko Ivanov, Jeremy P. Hilton
  • Patent number: 6791110
    Abstract: Electrical connection of a measuring socket to an IC package, to measure electrical characteristics of the IC package, is realized by bringing a measuring pin of a measuring arm of the measuring socket into contact with an end surface of a distal end of a lead of the IC package. Accordingly, a problem of solder plated to the lead becoming attached to and deposited on an upper side of a socket pin and shaved off by the distal end of the lead, and thereby producing solder residue, is solved. This problem occurs when electrical connection to an IC package is conventionally realized by bringing the distal end of the lead of the IC package into contact with a distal end of the socket pin.
    Type: Grant
    Filed: January 2, 2003
    Date of Patent: September 14, 2004
    Assignee: Oki Electric Industry Co., Ltd.
    Inventor: Akio Kotaka
  • Patent number: 6791111
    Abstract: The present invention relates to a display device. In particular, the display device of the present invention has a gate electrode over a substrate, the gate electrode has a lamination of a first conductive layer over the substrate and a second conductive layer on the first conductive layer; a semiconductor layer over the gate electrode with a gate insulating film interposed between; an insulating film in contact with a portion of the semiconductor layer; and at least one of source and drain electrodes formed in contact with a portion of the insulating film, where the first conductive layer does not have a tapered cross section, and the second conductive layer has a tapered cross section.
    Type: Grant
    Filed: December 20, 2002
    Date of Patent: September 14, 2004
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Naoaki Yamaguchi, Setsuo Nakajima
  • Patent number: 6791112
    Abstract: A semiconductor device that uses a high reliability TFT structure is provided. The gate electrode of an n-channel type TFT is formed by a first gate electrode and a second gate electrode that covers the first gate electrode. LDD regions have portions that overlap the second gate electrode through a gate insulating film, and portions that do not overlap. As a result, the TFT can be prevented from degradation in an ON state, and it is possible to reduce the leak current in an OFF state.
    Type: Grant
    Filed: October 1, 2002
    Date of Patent: September 14, 2004
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Hisashi Ohtani, Setsuo Nakajima
  • Patent number: 6791113
    Abstract: The invention encompasses a method of forming a dielectric material. A nitrogen-comprising layer is formed on at least some of the surface of a rugged polysilicon substrate to form a first portion of a dielectric material. After the nitrogen-comprising layer is formed, at least some of the substrate is subjected to dry oxidation with one or both of NO and N2O to form a second portion of the dielectric material. The invention also encompasses a method of forming a capacitor. A layer of rugged silicon is formed over a substrate, and a nitrogen-comprising layer is formed on the layer of rugged silicon. Some of the rugged silicon is exposed through the nitrogen-comprising layer. After the nitrogen-comprising layer is formed, at least some of the exposed rugged silicon is subjected to dry oxidation conditions with one or both of NO and N2O. Subsequently, a conductive material layer is formed over the nitrogen-comprising layer. Additionally, the invention encompasses a capacitor structure.
    Type: Grant
    Filed: April 15, 2003
    Date of Patent: September 14, 2004
    Assignee: Micron Technology, Inc.
    Inventors: Behnam Moradi, Er-Xuan Ping, Lingyi A. Zheng, John Packard
  • Patent number: 6791114
    Abstract: An organic light emitting device display may include transverse row and column lines. In a passively driven OLED display, a fuse may be positioned between the OLED material and the row electrode. When a short occurs, the single pixel may be separated from the circuit by the fuse, avoiding the possibility that an entire row of pixels may be adversely affected by the short associated with one single pixel along a row.
    Type: Grant
    Filed: July 12, 2001
    Date of Patent: September 14, 2004
    Assignee: Intel Corporation
    Inventor: Zilan Shen
  • Patent number: 6791115
    Abstract: A light emitting device has a substrate and a light-emitting section formed on the substrate. The light-emitting section includes a light-emitting layer in which light is generated by electro-luminescence, first and second electrodes used to apply electric charges to the light-emitting layer, and first and second dielectric multi-layered films between which the light-emitting layer is interposed. The first and second electrodes are disposed to avoid overlap with a light-emitting region in the light-emitting layer as viewed from a light emitting direction.
    Type: Grant
    Filed: March 6, 2002
    Date of Patent: September 14, 2004
    Assignee: Seiko Epson Corporation
    Inventors: Tomoko Koyama, Takeo Kaneko
  • Patent number: 6791116
    Abstract: In a light emitting diode, a scattering material-containing light guiding/scattering layer is provided which directly receives light emitted from a light emitting element. The scattering material contained in the light guiding/scattering layer irregularly reflects and scatters the incident light. The scattered light is led to a fluorescence emitting layer formed of a transparent binder containing a phosphor material. The probability of incidence of light having high optical density, which has been emitted from the light emitting element, directly to the phosphor material contained in the fluorescence emitting layer is lowered, and light can be radiated from the whole fluorescence emitting layer. Therefore, uniform light having a desired color can be radiated with high efficiency from the light emitting diode.
    Type: Grant
    Filed: April 28, 2003
    Date of Patent: September 14, 2004
    Assignees: Toyoda Gosei Co., Ltd., Matsushita Electric Industrial Co., Ltd.
    Inventors: Yuji Takahashi, Shigeru Fukumoto, Katsunori Arakane, Atsuo Hirano, Kunihiro Hadame, Kunihiko Obara, Toshihide Maeda, Hiromi Kitahara, Kenichi Koya, Yoshinobu Yamanouchi
  • Patent number: 6791117
    Abstract: A semiconductor light emitting device is disclosed, which comprises a substrate, and a multi-layer semiconductor film formed on the substrate, the multi-layer semiconductor film including a plurality of semiconductor layers overlaid on the substrate, the semiconductor layers having a light emission layer for emitting a light, wherein the light is picked up at a first side of the multi-layer semiconductor film, which is a side opposite to the substrate, wherein a pattern having a light pickup surface is formed on a light emitting portion of the multi-layer semiconductor film, the light pickup surface is in a (111) plane or a plane in the vicinity of the (111) plane, and an unevenness is formed on the light pickup surface.
    Type: Grant
    Filed: January 14, 2003
    Date of Patent: September 14, 2004
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Shunji Yoshitake, Koichi Takahashi, Shinji Nunotani, Kenichi Ohashi
  • Patent number: 6791118
    Abstract: There is disclosed a semiconductor light emitting element formed by selective growth and being high in light emitting efficiency, in which at least one GaN-based layer grown by ELO in stacked/formed on a sapphire substrate, and a fluorescent substance for converting an ultraviolet light to a visible light is contained in a selective growth mask material layer for use in this case. Since this fluorescent substance converts the ultraviolet light to the visible light, a binding efficiency of the ultraviolet light to the fluorescent substance is enhanced in either one of a center light emitting type and UV light emitting type of light emitting elements. By further containing the fluorescent substance into a passivation film, the efficiency is further enhanced.
    Type: Grant
    Filed: June 23, 2003
    Date of Patent: September 14, 2004
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Chisato Furukawa, Hideto Sugawara, Nobuhir Suzuki