Abstract: Conductive paste allowing narrowing of an electrode prepared from the conductive paste and suppressing increase of resistance resulting from a small sectional area of the electrode is obtained. This conductive paste comprises binder resin, a conductive material dispersed in the binder resin and an additive, dispersed in the binder resin, containing at least either layered sulfide particles or spheroidal particles.

Abstract: The present invention provides a capacitive element comprising BiFeO3 having particular cations other than Bi ions or Fe ions at the Bi ion sites or Fe ion sites of a crystal lattice, along with an electronic device and the like using that capacitive element. According to the present invention, it is possible to achieve a high-performance electronic device which has a large recording density and which is environmentally friendly because it contains no lead.

Abstract: Describes an article, e.g., an optical article such as a lens, in which the article includes (a) a rigid substrate, e.g., a transparent ophthalmic substrate, such as a thermoset or thermoplastic substrate, having at least one surface suitable for accommodating a photochromic coating, and (b) a transparent photochromic coating comprising dendritic polymeric acrylate, e.g., polyester acrylate, on at least a portion of said surface of the substrate, the coating comprising a photochromic amount of at least one photochromic material, e.g., an organic photochromic material.

Abstract: A laser medium includes a single crystal of chromium-doped LiScl-xInxGe1-ySiyO4, where 0?x?1 and 0?y?1. Preferably, x and y are not both 0. A laser, such as a tunable near infrared laser, can contain the laser medium.

Abstract: A composition made up of an inorganic fire-retardant having at least a bimodal distribution of particle sizes.

Abstract: A mining bit puller having a striking pad is disclosed. The puller has a plate with two forks at a front end and a striking pad at a back end. In one embodiment, the forks are generally wedge shaped, and the puller includes a handle extending at an angle from the top of the bit puller plate. During mining tool bit changeout operations, the pad may be struck with a hammer or other tool in order to force the forks between a collar of the tool bit and its mounting block to pull the tool bit out of the block.

Abstract: The invention is a compact drive for a counterweight-assisted winch which can be retrofitted into existing manually operated systems that use counterbalancing weights. The counterbalancing weight will be fixed at a first predetermined percentage of the maximum capacity of the set, preferably about 50%. The winch is rated at a second predetermined percentage of the maximum capacity of the set, preferably about 50%. Together the first and second predetermined percentages sum to at least 100% of the maximum capacity of the set. By using the winch in a closed loop configuration, it will operate the set at any load from 0 to 100% of the set's rated capacity, without the need to adjust the counterbalancing weights. The compact drive system employs two motorized winches positioned along the long axis of two adjacent counterweight rigging systems, each winch engaging a respective chain used to move a counterbalancing weight.

Abstract: A winch for use in an underwater fish-gathering light in accordance with the present invention comprises: a driving pulley(110) for winding or unwinding a cable connected to the underwater fish-gathering light; an auxiliary pulley(120) for keeping the cable to stick to the driving pulley; a driving shaft(330) for transmitting driving force to the driving pulley; a driving motor(310) for driving the driving shaft; and a winch controller(350) for controlling the rotation of the driving motor.

Abstract: A modular fence is disclosed comprising a plurality of vertically extending fence boards each of which is provided with spaced apart exterior surfaces, a top edge, a bottom edge and coextensive side edges. Grooves are formed in the side edges and are defined by a pair of spaced apart parallel projections, one of which is adapted to be received in the groove of an adjacent fence board.

Abstract: A fence rail clip for attaching a fence rail to a vertical fence post is disclosed. The rail clip has a bracket with a raised central area flanked by two lower lateral areas and a rail connector that, vertically or horizontally, slidingly engages the central area of the bracket. The lateral areas define locations for connecting the bracket to a vertical post. The rail connector has a rail receiving receptacle into which an end of a rail may be inserted. The bracket may include indicia or characters for determining the correct position of attachment of the rail connector to the bracket. When the position of the rail connector is altered by sliding the rail connector relative to the bracket, the angle of the rail receiving receptacle is altered, thereby changing the angle at which a rail may be attached to the post.

Abstract: A chalcogenide-based programmable conductor memory device and method of forming the device, wherein a nanoparticle is provided between an electrode and a chalcogenide glass region. The method of forming the nanoparticle utilizes a template over the electrode or random deposition of the nanoparticle.

Abstract: A chalcogenide memory cell includes a lower electrode, a chalcogenide layer, and an upper electrode. The lower electrode includes a tapered cavity. The chalcogenide layer is formed in the tapered cavity of the lower electrode. One side of the chalcogenide layer is adjacent to the lower electrode. The upper electrode is formed in a second cavity formed by the chalcogenide layer so that the upper electrode substantially fills the second cavity. The upper electrode is adjacent to the other side of the chalcogenide layer. Information is stored and retrieved by passing current between the upper electrode and the lower electrode. The tapered cavity of the lower electrode is formed through anisotropic etching or through sidewall-application. Undesired currents are prevented using an additional dielectric layer or by using an additional conductive layer that forms a p-n junction with the lower electrode.

Abstract: A phase change memory cell includes a phase change layer of a phase change material on a semiconductor body. A hard mask structure is formed on the phase change layer and a resist mask is formed on the hard mask structure. A hard mask is formed by shaping the hard mask structure using the resist mask. The phase change layer is shaped using the hard mask. The resist mask is removed before shaping the phase change layer.

Abstract: The present invention discloses a AlGaInN nitride substrate structure using TiN as buffer layer and the manufacturing method thereof. The present invention deposits TiN having (111) surface onto the silicon substrate having (111) surface as a buffer layer, and grows III-V AlGaInN nitride epitaxy structure having (0001) surface. The present method can form high-quality III-V AlGaInN nitride epitaxy layer to manufacture the vertical-conducted III-V AlGaInN nitride devices and utilize the high-reflection TiN surface to enhance the efficiency of the opti-electrical devices. The present invention can further prevent the silicon substrate forming the noncrystalline SiNx in the AlGaInN epitaxy process, so that the yield of the chip can be improved.

Abstract: This invention is about a window interface layer in a light-emitting diode which comprises an n-type GaAs substrate with an n-type ohmic electrode at the bottom side thereof; an n-type AlGaInP cladding layer formed atop the substrate; an undoped AlGaInP active layer formed atop the n-type cladding layer; a p-AlGaInP cladding layer formed atop the active layer; a p-type window layer made of GaP; a p-type ohmic electrode formed atop the p-type window layer; and a highly doped p-type interface layer made of GaxIn1-xP (0.6?x?0.9) and interposed between the p-type cladding layer and p-type window layer wherein the highly doped p-GaInP interface layer possesses a band gap which is higher than that of the active layer and, however, smaller than that of the p-type cladding layer, and wherein the lattice constant lies between GaAs and GaP.

Abstract: A solid state light emitting device according to the present invention comprises an emitter structure having an active region of semiconductor material and a pair of oppositely doped layers of semiconductor material on opposite sides of said active region. The active region emits light at a first wavelength in response to an electrical bias across said doped layers. A quantum well structure is included that is integral to the emitter structure and has a plurality of layers having a composition and thickness such that the quantum well structure absorbs at least some of the light emitted from the active region and re-emits light of at least one different wavelength of light from said first wavelength.

Abstract: A transistor device with strained Ge layer by selectively growth and a fabricating method thereof are provided. A strained Ge layer is selectively grown on a substrate, so that the material of source/drain region is still the same as that of the substrate, and the strained Ge layer serves as a carry transport channel. Therefore, the performance of the device characteristics can be improved and the leakage current of the transistor may be approximately commensurate with that of a Si substrate field effect transistor (FET).

Abstract: The present invention relates generally to a semiconductor device having a channel region comprising a semiconductor alloy of a first semiconductor material and a second, different material, and wherein atomic distribution of the second material in the channel region is graded along a direction that is substantially parallel to a substrate surface in which the semiconductor device is located. Specifically, the semiconductor device comprises a field effect transistor (FET) that has a SiGe channel with a laterally graded germanium content.

Abstract: An organic thin film transistor and a method for fabricating the same are provided. A multi-dielectric layer of the organic thin-film transistor is disposed on the substrate and the gate electrode, and then the organic layers-of the organic thin film transistor, the source and drain are produced. Because of the isolation effect of the multi-dielectric layer, the hydrophilic and lipophilic processes do not affect each other during the manufacturing of the organic thin film transistor. In addition, the multi-dielectric layer includes at least one organic dielectric layer and at least one liquid state deposited oxide silicon thin film.

Abstract: The present invention is directed to the provision of a liquid crystalline organic semiconductor material, which is highly stable under a film forming environment and, at the same time, can easily form a film, for example, by coating. The liquid crystalline organic semiconductor material comprises: a thiophene skeleton comprising 3 to 6 thiophenes linearly connected to each other; and an identical alkyl group having 1 to 20 carbon atoms located on both sides of the thiophene skeleton, wherein acetylene skeletons each have been introduced into between the thiophene skeleton and the alkyl group, or acetylene skeletons have been introduced symmetrically into the thiophene skeleton.

Abstract: An organic semiconductor material characterized by having a structure represented by chemical formula 1, the planarity of a main chain A1-X-A2 being disintegrated by steric hindrance between B1 and X and steric hindrance between B2 and X, the organic semiconductor material having a number average molecular weight of about 2,000 to about 200,000: wherein A1, A2, B1, B2 and X each have a skeleton structure comprising L 6 ? electron rings, M 8 ? electron rings, N 10 ? electron rings, O 12 ? electron rings, P 14 ? electron rings, Q 16 ? electron rings, R 18 ? electron rings, S 20 ? electron rings, T 22 ? electron rings, U 24 ? electron rings, and V 26 ? electron rings, wherein L, M, N, O, P, Q, R, S, T, U, and V are each an integer of 0 (zero) to 6 and L+M+N+O+P+Q+R+S+T+U+V=1 to 6; and B1 and B2 have an alkyl group.

Abstract: A non-volatile organic resistance memory device including a first electrode, a second electrode, and a polyimide layer interposed between the first and second electrodes. The polyimide layer has a thickness such that a resistance of the polyimide layer varies in accordance with a potential difference between the first and second electrodes.

Abstract: An organic light emitting display provided according to the invention maintains light emission efficiency and elongates its lifetime by radiating heat generated from organic light emitting elements to the outside of an encapsulated area. In the organic light emitting display, a part of a cathode is extended to the outside of the encapsulated area of a main substrate to form a radiation section integrally with the cathode. Heat generated from organic light emitting elements is diffused and radiated from the radiation section so that the heat can be discharged therefrom.

Abstract: An organic light emitting display (OLED) and a method of manufacturing the OLED is disclosed. The OLED, which has a transparent metal layer substantially preventing an oxide layer from forming on a pad metal, and a method of manufacturing the OLED are disclosed. The OLED includes a substrate, a display unit formed on the substrate including gate and source/drain electrodes, and a pad unit formed on the substrate configured to transmit electrical signals to the display unit. The pad unit includes a wiring line terminal in which a transparent metal layer is formed in a predetermined shape and a predetermined region.

Abstract: An organic semiconductor material comprising an amine unit having a secondary or tertiary amine structure and a thiophene unit having a thiophene ring structure and preferably the amine unit has the following structure: wherein R1, R2, and R3 independently represent hydrogen, an optionally substituted alkyl group, an optionally substituted alkoxy group, an optionally substituted ether group, or an optionally substituted aryl group and may be same or different from each other.

Abstract: A silsesquioxane-based compound represented by Formula 1 and an organic light-emitting device including the same: wherein R1, R2, R3, R4, R5, R6, R7, and R8 are as defined in the specification. The use of the silsesquioxane-based compound enables to produce an organic light-emitting device with improvement in electrical characteristics such as brightness and efficiency. The silsesquioxane-based compound can exhibit good film smoothness and adhesion, and at the same time, good electrical characteristics such as current efficiency and brightness, and thus, is suitable for use in an organic light-emitting device.

Abstract: A dual emission organic light emitting display device and method of driving the same. The display device includes a pixel driver and an organic light emitting diode that can display different images on a top surface and a bottom surface and/or a same image on both the top and bottom surfaces. The display device includes a top/bottom selector that receives a driving current from the pixel driver and selectively supplies the driving current to a top organic light emitting diode or a bottom organic light emitting diode. The top/bottom selector includes transistors, which are connected between the pixel driver and the organic light emitting diode and select a top emission operation or a bottom emission operation. Here, the circuit configuration of the pixel driver is reduced so that the dual emission organic light emitting display device can be improved in terms of a layout, an interconnection, and an aperture ratio.

Abstract: It is an object of the present invention to manufacture, with high yield, semiconductor devices in each of which an element which has a layer containing an organic compound is provided over a flexible substrate. A method for manufacturing a semiconductor device includes: forming a separation layer over a substrate; forming an element-forming layer by forming an inorganic compound layer, a first conductive layer, and a layer containing an organic compound over the separation layer, and forming a second conductive layer which is in contact with the layer containing an organic compound and the inorganic compound layer; and after attaching a first flexible substrate over the second conductive layer, separating the separation layer and the element-forming layer at the separation layer.

Abstract: Compounds having two reactive functional groups are described that can be used to provide a connector group between a substrate and an amine-containing material. The first reactive functional group can be used to provide attachment to a surface of a substrate. The second reactive functional group is a N-sulfonylaminocarbonyl group that can be reacted with an amine-containing material, particularly a primary aliphatic amine, to form a carbonylimino-containing connector group. The invention also provides articles and methods for immobilizing amine-containing materials to a substrate.

Abstract: A semiconductor device comprises an N-type insulated-gate field-effect transistor including a first insulating layer that is provided along side walls of a gate electrode, has a negative thermal expansion coefficient, and applies a tensile stress to a channel region of the N-type insulated-gate field-effect transistor. The device also comprises a P-type insulated-gate field-effect transistor including a second insulating layer that is provided along side walls of a gate electrode, has a positive thermal expansion coefficient, and applies a compression stress to a channel region of the P-type insulated-gate field-effect transistor.

Abstract: A thin-film transistor is formed on a transparent substrate and has a gate electrode film layer and a source and drain regions, and further has an alignment mark made of one and the same constituent material as a constituent material of at least one of the gate electrode film layer and source and drain regions and formed at one and the same position as the gate electrode film layer or source and drain region.

Abstract: A thin film transistor array substrate and method for repairing the same are provided. Repairing lines are formed when the data lines on the thin film transistor array substrate are defined. Furthermore, the protruding portions and branches of common lines overlap with the repairing lines and the data lines respectively. The repairing method includes performing a laser welding operation to connect the common line with the data line, the repairing line or a scan line as well as removing a portion of the lines by laser. Thus, the thin film transistor array substrate and repairing method thereof can repair line defects and increase the manufacturing yield.

Abstract: An electro-optical device includes: a substrate; a plurality of pixels provided in a pixel region on the substrate; peripheral circuits that are provided in a peripheral region surrounding the pixel region, the peripheral circuits being for controling the plurality of pixels; a plurality of signal lines that supply signals for controlling the peripheral circuits, that at least partially overlap each other in the peripheral region, and that are formed in a plurality of different conductive layers with interlayer insulating layers interposed therebetween; and a shielding layer that is provided between layers where the plurality of signal lines overlap each other, so as to overlap the plurality of signal lines.

Abstract: A thin film transistor substrate with good process efficiency and a method of manufacturing the same are provided. The thin film transistor substrate includes a first conductive type MOS transistor and a second conductive type MOS transistor. The first conductive type MOS transistor includes a first semiconductor layer formed on a blocking layer and having first conductive type low-concentration doping regions adjacent to both sides of a channel region, first conductive type source/drain regions adjacent to the first conductive type low-concentration doping regions, a first gate insulating layer formed on the first semiconductor layer, a second gate insulating layer formed on the first gate insulating layer and overlapping with the channel region and the low-concentration doping regions of the first semiconductor layer, and a first gate electrode formed on the second gate insulating layer.

Abstract: Disclosed are a thin film transistor and a method for fabricating the same. The thin film transistor is capable of a fine current control. The thin film transistor includes a semiconductor layer comprising a channel; a gate electrode overlying the semiconductor layer; a source electrode connected to a first end of the semiconductor layer; a drain electrode connected to a second end of the semiconductor layer; and a conductive line connected to one of the source and drain electrodes. The conductive line is configured to generate a magnetic field penetrating through at least a portion of the semiconductor layer when an electrical current flows through the conductive line.

Abstract: A white light LED (light emitting diode) is disclosed. The white light LED comprises: a bracing frame; at least an UV (or a blue light) chip mounted on the bracing frame; and a flat thin film stacked on the UV chip and formed by mixing a main agent and a solute uniformly for having uniform thickness and homogenized fluorescent powder, thereby forming the uniform white light free of photochromic difference or halation by passing the UV light emitted from the UV chip through the thin film.

Abstract: Quadrangular prism-like EL bars are each formed by depositing a light emitting layer and a positive hole transport layer on an outer surface of a data line. The EL bars are arranged in such a manner that each of the EL bars crosses a plurality of scanning lines formed on a transparent substrate. A sealing substrate presses the EL bars against the scanning lines. A sealing layer is formed along the outer circumference of the sealing substrate and the outer circumference of the transparent substrate. The sealing layer seals the space between the sealing substrate and the transparent substrate (that accommodates the data lines, the light emitting layers, the positive hole transport layers, and the scanning lines). This configuration facilitates design changing of an electroluminescence apparatus including modification of the size of the apparatus, the pixel size, and the type of the functional layers, thus improving productivity.

Abstract: A silicon carbide semiconductor device having a MOS structure includes: a substrate; a channel area in the substrate; a first impurity area; a second impurity area; a gate insulating film on the channel area; and a gate on the gate insulating film. The channel area provides an electric current path. The channel area and the gate insulating film have an interface therebetween. The interface includes a dangling bond, which is terminated by a hydrogen atom or a hydroxyl. The interface has a hydrogen concentration equal to or larger than 2.6×1020 cm?3.

Abstract: Microelectronic imaging units and methods for manufacturing a plurality of imaging units at the wafer level are disclosed herein. In one embodiment, a method for manufacturing a plurality of imaging units includes providing an imager workpiece having a plurality of imaging dies including integrated circuits, external contacts electrically coupled to the integrated circuits, and image sensors operably coupled to the integrated circuits. The individual image sensors include at least one dark current pixel at a perimeter portion of the image sensor. The method includes depositing a cover layer onto the workpiece and over the image sensors. The method further includes patterning and selectively developing the cover layer to form discrete volumes of cover layer material over corresponding image sensors. The discrete volumes of cover layer material have sidewalls aligned with an inboard edge of the individual dark current pixels such that the dark current pixels are not covered by the discrete volumes.

Abstract: A semiconductor optical device includes an active layer, a current blocking layer on both sides of the active layers and a cladding layer on both the active layer and the current blocking layer. The current blocking layer includes a buried layer, at least one intermediate layer of Al(Ga)InAs and a cover blocking layer. The cover blocking layer is located between the cladding layer and the Al(Ga)InAs layers and has a higher oxidation resistance than the Al(Ga)InAs layer. The current blocking layer is grown such that each Al(Ga)InAs layer is not exposed at the surface of the current blocking layer.

Abstract: A light emitting diode device includes a main substrate, a reflective layer, a joint layer, a light emitting diode layer and a diffusing layer stacked in turn from bottom to top, a material of the main substrate is silicon, a material of the reflective layer is metal alloy, the diffusing layer is scattered with nano silicon dioxide particles. A method for manufacturing the light emitting diode surface device is also provided.

Abstract: A light emitting diode device includes a substrate, a reflective layer, a joint layer and a light emitting diode layer stacked in turn from bottom to top, a material of the main substrate being Cu or Al, and a material of the reflective layer being metal Al or Ag, or alloy AlX or AgY, X represents Cu, Mg or Au, Y represents Cu, Au or Al. A method for manufacturing the light emitting diode device is also provided.

Abstract: A display substrate includes a substrate, a first insulating layer, an undercut compensating member, a first electrode, a second insulating layer and a first conductive pattern. The first insulating layer is formed on the substrate. The undercut compensating member is formed on the first insulating layer. The undercut compensating member has an etching rate smaller than that of the first insulating layer. The first electrode is formed on a portion of the undercut compensating member. The second insulating layer is formed on the first insulating layer. The second insulating layer has a contact hole through which a portion of the first electrode and a remaining portion of the undercut compensating member. The first conductive pattern electrically connected to the first electrode through the contact hole.

Abstract: A method and structure for producing lasers having good optical wavefront characteristics, such as are needed for optical storage includes providing a laser wherein an output beam emerging from the laser front facet is essentially unobstructed by the edges of the semiconductor chip in order to prevent detrimental beam distortions. The semiconductor laser structure is epitaxially grown on a substrate with at least a lower cladding layer, an active layer, an upper cladding layer, and a contact layer. Dry etching through a lithographically defined mask produces a laser mesa of length lc and width bm. Another sequence of lithography and etching is used to form a ridge structure with width w on top of the mesa. The etching step also forming mirrors, or facets, on the ends of the laser waveguide structures. The length ls and width bs of the chip can be selected as convenient values equal to or longer than the waveguide length lc and mesa width bm, respectively.

Abstract: A III-nitride light emitting layer is disposed between an n-type region and a p-type region. The light emitting layer is a doped thick layer. In some embodiments, the light emitting layer is sandwiched between two doped spacer layers.

Abstract: A semiconductor electronic device includes a buffer layer formed on a substrate, and a semiconductor operating layer that is formed on the buffer layer. The semiconductor operating layer includes a nitride-based compound semiconductor and. The buffer layer includes at least one composite layer that includes a first layer and a second layer. A lattice-constant difference between the first layer and the second layer is equal to or more than 0.2 percent.

Abstract: Light-emitting devices, and related components, processes, systems and methods are disclosed.

Abstract: A lighting source capable of producing white light using a semiconductor radiation source. The semiconductor radiation source may be an ultraviolet (“UV”) light emitting diode (“LED”) device that emits light at a short wavelength, e.g., near-violet or ultraviolet light. A thin film of phosphor may be deposited or coated on the surface of the UV LED or positioned directly above the UV LED. The lighting source may also include an UV reflector radiationally coupled to the thin phosphor layer that allows visible white light emitted from the thin phosphor to pass through and reflects shorter wavelength light back to the thin phosphor layer.

Abstract: Conductive lines in an imaging device are coated with an anti-reflective film to reduce crosstalk caused by light reflecting from the conductive lines. An interface results between the anti-reflective film and the surface of the conductive line surface. A second interface exists between the anti-reflective film and an overlying insulating layer. The anti-reflective film is formed from a material having a complex refractive index such that reflectance is reduced at each of the two interfaces. The anti-reflective film also can be light absorbing to provide further reductions in light reflection and consequent crosstalk.

Abstract: A substrate-based white light diode construction and manufacturing process comprised of having a blue-light chip attached to a substrate; blue-light chip and substrate circuitry contact being connected with a gold plated wire; blue-light chip inlaid into cavity of a mold; and fluorescent glue powder or cake being filled and preheated into fluid before being compressed into the cavity to bind and cover up blue-light chip.