Abstract: An electronic device or signal processing device consists of a rectifier and capacitor which share common elements facilitating the construction and application of the device to various types of substrates and, particularly, flexible substrates. Components of the device may be fabricated from organic conductors and semiconductors.

Abstract: A method of forming bipolar junction devices, including forming a mask to expose the total surface of the emitter region and adjoining portions of the surface of the base region. A first dielectric layer is formed over the exposed surfaces. A field plate layer is formed on the first dielectric layer juxtaposed on at least the total surface of the emitter region and adjoining portions of the surface of the base region. A portion of the field plate layer is removed to expose a first portion of the emitter surface. A second dielectric layer is formed over the field plate layer and the exposed portion of the emitter. A portion of the second dielectric layer is removed to expose the first portion of the emitter surface and adjoining portions of the field plate layer. A common contact is made to the exposed first portion of the emitter surface and the adjoining portions of the field plate layer. In another embodiment, the field plate and emitter contact are formed simultaneously.

Abstract: Known techniques to improve metal-oxide-semiconductor field effect transistor (MOSFET) performance is to add a high stress dielectric layer to the MOSFET. The high stress dielectric layer introduces stress in the MOSFET that causes electron mobility drive current to increase. This technique increases process complexity, however, and can degrade PMOS performance. Embodiments of the present invention create dislocation loops in the MOSFET substrate to introduce stress and implants nitrogen in the substrate to control the growth of the dislocation loops so that the stress remains beneath the channel of the MOSFET.

Abstract: The invention relates to a semiconductor component having a semiconductor body (100) and at least one pn junction present in the semiconductor body (100) and an amorphous passivation layer (70) arranged at least in sections on a surface (101) of the semiconductor body (100), the following holding true for the minimum Ds,min of an interface state density Ds at the junction between the passivation layer (70) and the semiconductor body (100): D s , min ? N S , Bd E g where NS,Bd is the breakdown charge and Eg is the band gap of the semiconductor material used for the semiconductor body (100).

Abstract: A structure for conducting carriers and method for forming is described incorporating a single crystal substrate of Si or SiGe having an upper surface in the <110> and a psuedomorphic or epitaxial layer of SiGe having a concentration of Ge different than the substrate whereby the psedomorphic layer is under strain. A method for forming semiconductor epitaxial layers is described incorporating the step of forming a psuedomorphic or epitaxial layer in a rapid thermal chemical vapor deposition (RTCVD) tool by increasing the temperature in the tool to about 600° C. and introducing both a Si containing gas and a Ge containing gas.

Abstract: The semiconductor device comprises: an interlayer insulating film 405 and an insulating film 409, interconnect lines 407, 408a and 408b embedded in the insulating film 409, circuit elements 410a and 410b mounted on the insulating film 409, a packaging film 415 formed so as to cover the circuit elements 410a and 410b, and an electroconductive shielding film 416 formed so as to cover the packaging film 415. The interconnect lines 408a and 408b are configured to be electrically coupled to the shielding film 416.

Abstract: A Radio Frequency (RF) device includes a semi conductive die and a package in which the semi conductive die mounts. The semi conductive die includes a first portion of an RF circuit and a plurality of die pads formed thereon. The package includes a heat slug upon which the semi conductive die resides, a plurality of package pins, a plurality of bond wires, a downbond rail, and a plurality of downbonds. Each of the bond wires couples between a corresponding die pad and a corresponding package pin. The downbond rail couples to the heat slug. At least one downbond couples between a die pad corresponding to the first portion of the RF circuit and a respective location on the downbond rail, serves as an inductor for a second portion of the RF circuit, may include a plurality of downbonds coupled in parallel, and has a length and/or a diameter selected to provide a desired inductance.

Abstract: The present invention is a coupler built on a semiconductor substrate, e.g. GaAs. Semiconductor processing allows for small trace and space rules. The tighter design rules provide for tighter coupling than can be achieved by ceramic processes. The greater coupling allows for a shorter through line and with less loss, thus closer to ideal coupling.

Abstract: A magnetic sensor is constituted using magnetic sensor chips mounted on stages supported by interconnecting members and a frame having leads in a lead frame. Herein, the stages are inclined upon plastic deformation of the interconnecting members. When the frame is held in a metal mold and the stages are pressed, the interconnecting members are elastically deformed, so that the magnetic sensor chips are bonded onto the stages placed substantially in the same plane and are then wired with the leads. Thereafter, the stages are released from pressure, so that the interconnecting members are restored from the elastically deformed states thereof. When the magnetic sensor chips are combined together to realize three sensing directions, it is possible to accurately measure three-dimensional bearings of magnetism, and the magnetic sensor can be reduced in dimensions and manufactured with a reduced cost therefor.

Abstract: A transistor structure includes at least one chip; a packaging insulating layer, a first adhesive layer, a conducting layer, and a second adhesive layer sequentially provided on one side of the chip having electrical contacts thereon, so that the conducting layer is bonded between the first and the second adhesive layer; and a leadframe bonded to an outer side of the second adhesive layer. The conducting layer may be a metal sheet, a metal film, or a type of conducting fiber. The leadframe is connected to the electrical contacts on the chip via lead wires, and at least one of the electrical contacts on the chip is connected to the conducting layer via a conductor, so that the conducting layer is able to isolate electrical noises and reduce electromagnetic interferences, improve rates of transmission and heat release, strengthen chip packaging structure, and serve as a common grounding circuit.

Abstract: A semiconductor device comprises a semiconductor chip which is mounted on a stage. A plurality of leads are electrically connected with the semiconductor chip. A package encloses the semiconductor chip and a part of the plurality of leads. A first corner lead is provided in the stage and outwardly extends from at least one of vertex portions at four corners of the stage to an exterior of the package.

Abstract: Methods and systems for attaching a chip to a next level package by directing radiant energy at the chip back side while substantially preventing irradiation of the next level package are described.

Abstract: A sensor chip for defining an exposed molding region is disclosed. The sensor chip includes a semiconductor chip and a metal dam bar protruding from the active surface of the semiconductor chip. The active surface of the semiconductor chip includes a sensing region and at least one bonding pad is disposed on the active surface. The metal dam bar separates the sensing region and the bonding pad to prevent contamination of the sensing region by the mold flash. Preferably, a step is formed on the periphery of the active surface of the semiconductor chip, such that the semiconductor chip includes a T-shaped profile. Additionally, the metal dam bar is extended to the step to form an enclosed ring thereby effectively defining an exposed molding region that contains the sensing region.

Abstract: Methods and apparatuses to provide a stacked-die device comprised of stacked sub-packages. For one embodiment of the invention, each sub-package has interconnections formed on the die-side of the substrate for interconnecting to another sub-package. The dies and associated wires are protected by an encapsulant leaving an upper portion of each interconnection exposed. For one embodiment of the invention the encapsulant is a stencil-printable encapsulant and the upper portion of the interconnection is exposed by use of a patterned stencil during application of the encapsulant.

Abstract: The present invention provides a technique which, without causing two problems, i.e., (1) increased number of power supply/grounding pins and (2) increased power feed line inductance, prevents the noise causing a problem in a control circuit, from becoming routed around and induced into an output buffer. More specifically, the above can be realized by using either of two methods: (A) providing an on-chip bypass capacitor for the control circuit and isolating a power feed route of the control circuit from that of the output buffer in an AC-like manner, or (B) designing electrical parameters (inserting resistors) such that the oscillation mode of any electrical parameter noise induced into the power feed routes will change to overdamping.

Abstract: A Stackable package module comprises a plurality of semiconductor devices in stack. One of the semiconductor devices includes a chip with an active surface and a corresponding back surface, a plurality of solder bumps and a plurality of stud bumps. The solder bumps are formed on the active surface. The stud bumps are formed on the back surface. Each stud bump has a bump body and a protruding trail by wire-bonding and cutting. Bumps of another package are bonded on the stub bumps for replacing known intermediate substrate in conventional stacked package module.

Abstract: A composite electronic component having a multi-layer wiring board, a first power terminal electrode, a second power terminal electrode, an external connection power supply terminal, a surface-mounted component, an insulator, and a power supply pattern. The first and the second power terminal electrodes are disposed on a first face of the multi-layer wiring board. The external connection power supply terminal is disposed on a second face opposite to the first face of the multi-layer wiring board and connected with the first power terminal electrode. The surface-mounted component is mounted on the first face of the multi-layer wiring board and connected with the first and the second power terminal electrodes at a first face thereof. The insulator covers at least a second face opposite to the first face of the surface-mounted component, the first power terminal electrode, and the second power terminal electrode with a first face thereof.

Abstract: A semiconductor package substrate is provided, which can meet the move toward high integration of semiconductors. A nickel layer is plated on an electroplated copper foil to form a wiring pattern. An LSI chip is mounted on the copper foil, and terminals of the LSI chip and the wiring pattern are connected by wire bonding, followed by sealing with a semiconductor-sealing epoxy resin. Only the copper foil is dissolved away with an alkali etchant to expose nickel. With a nickel stripper having low copper-dissolving power, the nickel layer is removed to expose the wiring pattern. A solder resist is coated, and a pattern is formed in such a way that connecting terminal portions are exposed. Solder balls are placed at the exposed portions of the wiring pattern and are then fused. The wiring pattern is connected to an external printed board via the solder balls.

Abstract: A package includes: a substrate having a ridged peripheral portion and a center portion defined by and lower in level than the ridged peripheral portion. A semiconductor chip is mounted on the center portion. A plurality of lead is electrically coupled to the semiconductor chip and penetrates the substrate outwardly from the center portion. The package also includes a cap defining a cavity space which accommodates the semiconductor chip. The cap has a cap bonding face bonded with a substrate bonding face of the ridged peripheral portion. The cap bonding face and the substrate bonding face are higher in level than the center portion.

Abstract: A semiconductor or electronic device, such as a power module uses at least one spring terminal as a control terminal. The spring terminal is led outside a case through a coil-accommodating member, which can be a frame or removable cover. With this arrangement, the spring terminal can be arranged at an arbitrary position inside the case. The spring terminal can be joined by soldering or bonding to the electrode of an in-case substrate while being held by the frame or cover. The in-case substrate can be accessed for solder joining through at least one aperture formed in the frame.

Abstract: Techniques for reducing the mechanical stress imposed upon semiconductor dice by protective molding compounds during times of temperature fluctuation. A thermoplastic material is attached to a top surface of a die to relieve the stress. The thermoplastic material serves as a cushion between the die and the molding compound when the components expand and contract. The thermoplastic material can be shaped such that it does not cover bond pads on the surface of a die.

Abstract: An area array connector for providing a thermal and an electrical interconnection between a first circuit element and a second circuit element is described. The area array connector includes at least one electrically conductive interconnector adapted to provide an electrical interconnection between the first circuit element and the second circuit element. The area array connector also includes at least one thermally conductive member adapted to provide thermal interconnection between the first circuit element and the second circuit element.

Abstract: The present invention relates to a lid for an integrated circuit. According to one embodiment, an integrated circuit having a lid comprises a substrate having a flat surface and extending a first length and a lid having a recess and a foot portion. The lid generally has a second length shorter than the first length, and is positioned on the flat surface of the substrate. Finally, a bonding agent is positioned on the flat surface adjacent the foot portion of the lid. According to an alternate embodiment, a second component is positioned on the substrate outside the foot portion, and an adhesive seal is positioned on the substrate adjacent the foot and covering the component. A method of securing a lid to an integrated circuit is also disclosed.

Abstract: Solder bump structures for semiconductor device packaging is provided. In one embodiment, a solder bump structure comprises a semiconductor substrate, the substrate has at least one contact pad and an upper passivation layer having at least one opening formed therein exposing a portion of the contact pad. At least one patterned and etched polymer layer is formed on a portion of the contact pad. At least one patterned and etched conductive metal layer is formed above the polymer layer and is aligned therewith. And at least one layer of solder material having a solder height is provided above the conductive metal layer, the layer of solder is aligned with the conductive metal layer, the layer of solder is thereafter reflown thereby creating a solder ball.

Abstract: A nonconductive hydrogen barrier layer is deposited on a substrate and completely covers the surface area over a memory capacitor and a MOSFET switch of an integrated circuit memory cell. A portion of an insulator layer adjacent to the bottom electrode of a memory capacitor is removed by etching to form a moat region. A nonconductive oxygen barrier layer is deposited to cover the sidewall and bottom of the moat. The nonconductive oxygen barrier layer and a conductive diffusion barrier beneath the capacitor together provide a substantially continuous diffusion barrier between the capacitor and a switch. Also, the nonconductive hydrogen barrier layer, the nonconductive oxygen barrier, and the conductive diffusion barrier substantially completely envelop the capacitor, in particular a ferroelectric thin film in the capacitor.

Abstract: A method of manufacturing a semiconductor device includes the steps of providing a semiconductor substrate (202), forming a dielectric layer (204) over the semiconductor substrate (202), and etching a trench or a via (206) in the dielectric layer (204) to expose a portion of the surface of the semiconductor substrate (202). The method also includes the step of forming a conductive layer (212, 220) within in the trench or the via (206). The method further includes the steps of polishing a portion of the conductive layer (220) and annealing the conductive layer (212, 220) at a predetermined temperature. Moreover, the conductive layer (212, 220) also includes a dopant, and the dopant diffuses substantially to the surface of the top side of the conductive layer (212, 220) to form a dopant oxide layer (212a, 220a) when the conductive layer (212, 220) is annealed at the predetermined temperature and the dopant is exposed to oxygen.

Abstract: Interconnect structures having buried etch stop layers with low dielectric constants and methods relating to the generation of such buried etch stop layers are described herein. The inventive interconnect structure comprises a buried etch stop layer comprised of a polymeric material having a composition SivNwCxOyHz, where 0.05?v?0.8, 0?w?0.9, 0.05?x?0.8, 0?y?0.3, 0.05?z?0.8 for v+w+x+y+z=1; a via level interlayer dielectric that is directly below said buried etch stop layer; a line level interlayer dielectric that is directly above said buried etch stop layer; and conducting metal features that traverse through said via level dielectric, said line level dielectric, and said buried etch stop layer.

Abstract: In one embodiment, a semiconductor device comprises an active region isolated by a device isolation layer placed in a semiconductor substrate having a main surface. A molding hole is placed in the semiconductor substrate on the active region. A pocket insulating layer pattern conformally covers the molding hole. A pocket line extends across the active region, filling the molding hole and protruding from the main surface of the semiconductor substrate. The pocket line includes a pocket conductive layer line, a lower metal layer line, and an upper metal layer line, which are sequentially stacked on the pocket insulating later pattern. The device further may further include a line capping layer pattern placed on the pocket line. The line capping layer pattern and the pocket conductive layer line may surround the lower and upper metal layer lines.

Abstract: A solder preform having multiple layers including a solder layer filled with additives interposed between two unfilled layers for improved wettability. A solder preform having a sphere which contains a solder material filled with additives, and an unfilled surface layer for improved wettability. A thermal interface material having a bonding component and an additive component which is a CTE modifying component and/or a thermal conductivity enhancement component. Active solders containing intrinsic oxygen getters.

Abstract: A damascene structure is provided comprising a substrate, a lower intermetal dielectric layer over the substrate, an exposed conductive structure within the lower intermetal dielectric layer, a composite etch stop layer over the lower intermetal dielectric layer and the exposed conductive structure; the composite etch stop layer comprising a first lower sub-layer and a second upper sub-layer, an upper intermetal dielectric layer over the composite etch stop layer, a trench interconnection opening forming within the upper intermetal dielectric layer and the composite etch stop layer, the trench interconnection opening exposing the conductive structure, a barrier metal layer at least lining the trench interconnection opening. and a conductor plug within the trench interconnection opening, contacting the conductive structure. The upper surface of the barrier metal layer is coplanar with the upper surface of the conductor plug.

Abstract: A method (and structure) of forming an interconnect on a semiconductor substrate, includes forming a relatively narrow first structure in a dielectric formed on a semiconductor substrate, forming a relatively wider second structure in the dielectric formed on the semiconductor substrate, forming a liner in the first and second structures such that the first structure is substantially filled and the second structure is substantially unfilled, and forming a metallization over the liner to completely fill the second structure.

Abstract: An integrated circuit arrangement includes a circuit carrier and an integrated circuit mounted on the carrier. The carrier has a receiving zone including electrical contacts for receiving the integrated circuit. Islands and voids extend across the carrier to reduce the rigidity of the carrier. Adjacent islands are connected by bridging portions in the form of serpentine members.

Abstract: A flywheel system incorporates a variable speed synchronous reluctance motor-generator and a variable speed permanent magnet generator for providing backup power. Rotating elements are supported by electromagnetic bearings and electric power provided by the backup generator maintains electromagnetic bearing operation during that portion of a coast down period when shaft speed falls below the minimum speed required for operation of the synchronous reluctance motor-generator.

Abstract: To provide a power supply apparatus for an electric vehicle wherein the insulation of a power supply line for supplying a drive voltage to an electric motor can be simplified and the cost for the insulation can be reduced. A power supply apparatus for an electric vehicle includes batteries for driving a motor and general electric parts. An node A of an intermediate voltage of 24 V between a drive voltage of 48 V of the batteries and the ground voltage is connected to a ground line for the general electric parts. An inverter produces a voltage to be applied to the general electric parts based on the drive voltage of 48 V of the batteries and the intermediate voltage of 24 V. By adjusting the duty ratio of the inverter, a voltage of AC 24 V or AC 12 V can be applied to the general electric parts.

Abstract: An electric steering lock apparatus that protects an actuator from overheating without enlarging the actuator. The electric steering lock apparatus includes a lock pin engaged with a steering shaft to lock the steering shaft. An actuator moves the lock pin between a lock position in which the lock pin is engaged with the steering shaft and an unlock position in which the lock pin is disengaged from the steering shaft. A control unit controls the actuator. The control unit generates a calculated value related to operation time of the actuator and suspends operation of the actuator when the calculated value is greater than a predetermined operation suspension threshold value.

Abstract: A mobile high voltage network supplies electrical consumer units connected via a plug-in connector and can be switched on and off by means of mechanical switches, with a fuse responding in the event of a short circuit. The high voltage network carries a direct voltage and to each electrical consumer unit (8; 10) a separate diagnostic and protection monitoring system is assigned which is activated when it is switched on and/or off. Such a direct voltage and high voltage network in conjunction with the diagnostic and protection monitoring system makes it possible, before starting up any circuit of consumer units, to effect a self-diagnosis of the protection monitoring system, to ensure that all components are fully functional. Without this, self-diagnosis with proof of functionality the relevant circuit of consumer units is not switched on.

Abstract: A safety switching module for safely switching-off an electrical load (43), comprising a first and a second switching control device (20A, 20B); a first and a second switching element (24.1, 24.2) both being series-connected with each other and forming a first current path (26.1) for supplying the load, whereby the first switching element (24.1) can be controlled by the first switching control device (20A) and the second switching element (24.2) can be controlled by the second switching control device (20B); and an evaluation and control device (12) for testing the switching-off ability of at least one switching element. A third and a fourth switching element (24.3, 24.4) are provided which are connected to each other in series, are connected in parallel to the series connection consisting of the first and second switching elements (24.1, 24.2) and form a second current path (26.2), the third switching element (24.

Abstract: An inner rotor motor includes a rotor having a plurality of magnetic poles circumferentially arranged, and a stator with a stator core having a plurality of magnetic pole teeth that are positioned on the outer side of the circumference of the rotor and oppose the rotor. A coil is provided on each of the magnetic pole teeth. The stator extends not more than 180 degrees with respect to the center of the rotor.

Abstract: A connection part between brush side terminals and power side terminal pieces is disposed at either of positions L and R located laterally next to an axis of a motor and opposed to each other with respect to the axis. Both terminals are connected to each other through a connection unit detachably fitted to the brush side terminals and others and the power side terminal pieces and others. The connection unit has male terminals to be coupled to the brush side terminal and others, female terminals to be coupled to the power side terminal piece and others, and a coil part for noise prevention connecting the male terminal and others to the female terminal and others. The connection part can be set to the position L or R by rotating the brush holder in a circumferential direction, which makes it possible to use the connection unit at any of these positions. Thus, the brush holder unit can be shared in electric motors having a speed reduction mechanism with different specifications to reduce a product cost.

Abstract: A stator for use in internal combustion engine, the stator comprises a central core having a top surface, a bottom surface, and a plurality of openings extending therethrough. The central core includes a plurality of poles extending outwardly from the periphery of the core. The periphery of the core and the poles are electrically insulated from the central core by an insulating material. Wire is wound on the poles to produce wire coils around each of the poles. The wire coils are electrically connected to lead wires from ignition and/or charging system circuitry or components. Wires from the wire coils and the lead wires are inserted into at least one of the openings in the central core where they are terminated and secured with lead wires from ignition and/or charging system circuitry or components. The wires from the wire coils and the lead wires can also be connected prior to their insertion into the openings wherein the connected wires are secured.

Abstract: A brush holder is installed to a motor main body and has a connector arrangement, which is directly connectable with an external connector to receive electric power. The brush holder holds a plurality of power supply brushes. A control circuit member is installed in a gear housing through an installation opening of the gear housing. The control circuit member controls rotation of the motor main body and is electrically connected to the connector arrangement and the power supply brushes.

Abstract: An enclosure for a rotor in a generator including the rotor, rotor windings and a stator, the enclosure comprising a plurality of composite rings located adjacent one another along a length dimension of the rotor so as to contain the rotor windings on the rotor, the rings each comprising at least two layers selected from the group consisting essentially of metals, glass fiber laminates and graphite fiber laminates.

Abstract: A rotor is provided so that a rotor-side end part of a rotation shaft is rotatably supported by a bearing accommodated in a bearing accommodating part provided in a bottom part of a yoke in such a way as to project to a rotor side, and a part of an armature winding wound around a core surrounds the bearing accommodating part through an insulator.

Abstract: An axial gap rotating electrical machine is provided with permanent magnets and cores in a rotor. The permanent magnets are oriented such that magnetization surfaces face in the circumferential direction of the rotor. The cores are arranged alternately with the permanent magnets in the circumferential direction of the rotor. The amount of magnetic flux on the outside in the radial direction of the rotor is made greater than the amount of magnetic flux on the inside in the radial direction of the rotor. As a result, the magnetic flux density at the rotor cores can be made substantially constant in the radial direction of the rotor and torque output with respect to the size of the permanent magnets is improved by preventing magnetic saturation of the cores.

Abstract: An electrical machine having a plurality of pole pieces surrounded by bobbins and upon which individual coil windings are formed. The bobbins are formed by a insulating material in which are embedded electrical connectors that have terminal ends that afford connection to the coil windings and to an external connection for either deriving electrical power in the case the machine operates as a generator or receiving power in the event the device operates as a motor. Thus, cost is reduced and at the same time the device is more compact and more efficiency.

Abstract: A micro-electro-mechanical system (MEMS) mirror device includes an mirror, bonding pads, springs, and beams connected to the mirror. The mirror has a width greater than 1000 and less than 1200 microns, a length greater than 4000 and less than 5500 microns, and a thickness greater than 240 microns. Each beam includes a plurality of rotational comb teeth and is connected by multiple springs to the bonding pads.

Abstract: In a surface acoustic wave filter, an input-side IDT electrode and an output-side IDT electrode are arranged on a piezoelectric substrate so as to be separated from each other in the propagation of a surface acoustic wave. The thickness of the IDT electrodes is set so that the first coefficient of the velocity-dispersion has a negative value.

Abstract: A piezoelectric system has a piezoelectric motor (20) driving a driven element (22) so as to move the driven element (822) in response to an electric signal (25). The motor (20) has at least a first optimal operating frequency at which the motor (20) moves the driven element (22) an amount that meets predetermined criteria. The motor (20) and driven element (22) have a desired performance criteria when operated at that first operating frequency. A plurality of concatenated sinusoidal sweeping frequencies are repeatedly supplied to the piezoelectric motor (20) with at least one of the sweeping frequencies being sufficiently close to the first operating frequency to cause detectable motion of the driven element (22). The frequencies are varied in response to movement of at least one of the motor (20) and the driven element (22) to produce an average performance of the motor (20) and driven element (22) for a time corresponding to the time for one sweep of frequencies.

Abstract: A piezoelectric drive that is used to create a relative movement between a first and a second body on a plane of movement. The drive includes a flat metal sheet (1) that forms, or is secured to, the first body and that is arranged parallel to the plane of movement. The metal sheet (1) has a rest region (3) and at least one resonator area (4). An elastic spring area (5), which is parallel to the plane of the metal sheet, is disposed between the rest region (3) and the resonator area (4). A flat, rectangular piezoelement (6), which can be excited in a 3,1 mode, is coupled to a longitudinal axis (A) such that the longitudinal axis of the piezoelement (6) lies essentially on a longitudinal axis of the resonator area (4). The resonator area (4) protrudes above the piezoelement (6) in the direction of the longitudinal axes (A), and forms a tapered horn shape (7).

Abstract: A vibration-type driving device comprises a vibration element including a driving member and an electro-mechanical energy conversion element having an electrode and arranged to displace the driving member with a driving signal supplied to the electrode, and a driven element that is kept in contact with the driving member of the vibration element. According to the driving signal supplied to the electrode of the electro-mechanical energy conversion element, the vibration element excites vibrations in two flexural vibration modes in which a direction of generation of a node in one mode is perpendicular to that in the other mode.