Abstract: A fabrication method of a thermal type infrared ray imaging device that includes forming a plurality of diodes in a single crystal silicon layer as first and second thermoelectric conversion parts constituting a thermoelectric conversion part; forming input and output wirings to be connected to a plurality of cells; forming a plurality of opening portions which expose the single crystal silicon substrate; forming a first photothermal conversion layer; and removing selectively a portion of the single crystal silicon substrate via the plurality of opening portions.

Abstract: An infrared radiation detecting device is provided that comprises a substrate, an infrared radiation absorbing unit, at least one support beam and a thermopile. The at least one support beam has a first end portion coupled to the substrate and a second end portion coupled to the infrared radiation absorbing unit. The thermopile includes first and second electrical conductors disposed on the support beam with the first and second electrical conductors having different electric conductivities. The first and second electrical conductors is dimensioned and shaped to improve structural rigidity of the support beam in comparison to an identically shaped support beam including a thermopile with a pair of first and second electrical conductors that are identically shaped and disposed parallel to each other.

Abstract: The removal of intra-cell moisture can be performed within a short period of time by the use of pressure cell. In particular, a method of measuring the concentration of silanol groups characterized in that in the measurement of the concentration of silanol groups in a silicon compound according to infrared absorption spectroscopy, a step of maintaining an intra-cell pressure at 20 Pa or below and a step of maintaining the same at 0.2 to 1 MPa are repeated at least twice before charging the cell with a silicon compound, thereafter a silicon compound is introduced in the cell and cell for measurement thereof is carried out to thereby identify the concentration of silanol groups in the silicon compound. For this method, there is provided a cell for infrared absorption spectroscopy measurement thereof is carried out to thereby identify the concentration of silanol groups in the silicon compound.

Abstract: Parametric processing capability is added to a typical sensor so that a target object can be more clearly distinguished from the background clutter in a given scenery. A polarizer with several segments of different polarization orientations is used to improve the typical sensor. The segments are sequentially advanced to pass therethrough infrared radiation images of pre-selected polarization orientations which are then collected by respective polarized frame grabbers. Image processing circuit processes these images to yield the polarization difference between any given pair of orthogonal polarizations. In a surveillance network, the polarization differences are subsequently used in the control center, to which such sensors are connected, to enhance the distinction of the observed objects against the background clutter suspended in the propagation medium.

Abstract: The present invention relates to a system for imaging the surface of a substrate through a coating on the substrate. The system includes an infrared light source positioned to cast an infrared light upon the substrate to thereby create reflected light. A focal plane array may be positioned to receive the reflected light and generate an image therefrom. At least one optical filter may be disposed between the substrate and the focal plane array so as to pass only coating transparent wavelengths of the reflected light along an optical path between the infrared light source and the focal plane array thereby visually revealing irregular structural features of the substrate as at least one image.

Abstract: For compensating for the rate dependent change of charge-to-voltage conversion factor in a drift-type radiation detector there is detected a change in a momentary photon hit rate affecting said drift-type radiation detector. A drain current flowing through an integrated amplifier of said drift-type radiation detector is changed by an amount proportional to the detected change in said momentary photon hit rate.

Abstract: An x-ray detector includes a large number of pixels, each of the latter being configured from one or more sub-pixels. Each of the sub-pixels include a detector material for the direct conversion of incident X-ray radiation into an electric signal. A device for converting the electric signals into corresponding digital signals is associated with each of the sub-pixels and the detector is also equipped with a device for processing said digital signals into a combined digital signal representing the number and/or energy of the X-ray quanta that are incident on the pixel.

Abstract: To eliminate defects in sealing the end of a scintillator and in sealing the end of a terminal of a flexible circuit board, to reduce the sealing processing time, to increase a pixel region, to eliminate image defects, and to enhance the service life, a radiation detection device comprises: a sensor panel comprising a photoelectric conversion portion and an electrode lead-out portion arranged in the outer periphery of the sensor panel; a flexible circuit board electrically connected to the electrode lead-out portion via a connection portion; a scintillator panel arranged on the photoelectric conversion portion and containing a scintillator layer; and a sealing resin comprising first and second sealing resins, the first sealing resin covering an end of the scintillator layer, and the second sealing resin covering the connection portion for the terminal of the flexible circuit board.

Abstract: An intraoral sensor includes a radiation sensitive sensor array, an event detection circuit, and a transmitter. The radiation sensitive sensor array includes a scintillator which converts x-rays into visible light radiation, and a plurality of pixels sensitive to visible light radiation to capture an image upon the presence of incident radiation. The event detection circuit includes a current sensing device and is configured to generate a triggering signal indicating the presence of radiation incident on the sensor array based upon the amount of electrical current drawn by the sensor array. The transmitter is adapted to transmit via a wireless link signals representing an image captured by the sensor array.

Abstract: The instant invention is a modular radiation beam analyzer for measuring the distribution and intensity of radiation produced by a radiation source. More specifically, the instant invention is a modular radiation scanning device that includes up to three modules. By selecting and assembling a predetermined number of modules a radiation detector may be manipulated through up to three axes for radiation beam scans as well as direct Tissue Maximum Ratio (TMR) and/or Tissue Phantom Ratio (TPR) scans.

Abstract: The present invention provides an electron optical lens column suitable for miniaturization, and provides the manufacturing method thereof. The column unit (1) comprises an inner column (11) and an outer column (12). The column unit is, as a whole, structured from a high-resistance electrically conductive ceramic. Electrostatic lenses (21, 22, 23, and 24) are affixed to the inner surface (111) of the inner column using a means such as plating or vapor deposition. Of the electrodes or electrode parts (211–213, 221, 231, 232, and 241–243) from which the lens is structured, those that share the same electric potential are connected by shared interconnections. This makes it possible to connect all of the electrodes or electrode parts with shared electric potentials as a group to the external interconnections.

Abstract: The present invention deals with a secondary electron detector (1), especially in a scanning electron microscope. The subject matter of the invention provides a secondary electrons detector (1) constituted by a sensor (2) located in a detector chamber (3), to which a vacuum air pump (10) is connected to produce vacuum inside the detector chamber (3), the detector chamber (3) being in its wall near to the active surface of the sensor (2) enclosed with a diaphragm featuring high resistance to the transmission of gas and low resistance to the transmission of the electrons. The electrically conductive grid (11) is produced either in the form of a copper screen or as a kapton membrane (12) with orifices (13) and it is equipped on both sides with conductive coating (14, 15). Outside the detector chamber (3), the electrically conductive grid (11) is covered with an input screen (18), which is usually of hemispherical shape and is connected to the low voltage source (19) of 80 to 150 V.

Abstract: The invention relates to the ionization of analyte molecules on a solid surface close to atmospheric pressure as an ion source for mass spectrometers. The invention uses a spray mist from an electrospray apparatus to ionize the analyte molecules, for example a spray mist created by spraying pure water, which generates predominantly multiply charged ions of the analyte molecules which are particularly suitable for fragmentation.

Abstract: A scanning microscope includes: a light source; an optical system that irradiates light from the light source onto a sample while two-dimensionally scanning the light, and collects light from the sample; a photo-detector that receives the light from the sample which has been collected by the optical system, and converts the light thus received into a brightness signal; an integrating circuit that integrates the brightness signal from the photo-detector for each pixel; and an image forming circuit that forms an image of the sample based upon the brightness signal of each pixel integrated by the integrating circuit. And the integrating circuit includes a plurality of integrators for integrating the brightness signal from the photo-detector and an adder for adding output signals from the plurality of integrators, and integrates the brightness signal while sequentially switching the plurality of integrators for each of a plurality of periods obtained by dividing a period corresponding to a pixel.

Abstract: A radiation image conversion panel is disclosed, comprising on a support at least one stimulable phosphor layer comprising a stimulable phosphor, wherein the stimulable phosphor layer is a layer of vapor-deposited stimulable phosphor having a thickness of 50 ?m to 20 mm, and the support exhibits a thermal conductivity of 0.1 to 20 W/mK. A preparation method thereof is also disclosed.

Abstract: A sheet or foil comprises a layer unit, divided into at least two layers: a layer A, being a layer of parylene and a layer B, wherein layer B, optionally present at both sides of layer A, is characterized in that it comprises an organic coating having at least one phosphoric acid ester compound.

Abstract: A therapy system using an ion beam, which can shorten the time required for positioning a couch (patient). The therapy system using the ion beam comprises a rotating gantry provided with an ion beam delivery unit including an X-ray tube. An X-ray detecting device having a plurality of X-ray detectors can be moved in the direction of a rotation axis of the rotating gantry. A couch on which a patient is lying is moved until a tumor substantially reaches an extension of an ion beam path in the irradiating unit. The X-ray tube is positioned on the ion beam path and the X-ray detecting device is positioned on the extension of the ion beam path. With rotation of the rotating gantry, both the X-ray tube emitting an X-ray and the X-ray detecting device revolve around the patient. The X-ray is emitted to the patient and detected by the X-ray detectors after penetrating the patient. Tomographic information of the patient is formed based on signals outputted from the X-ray detectors.

Abstract: Apparatus and methods are disclosed for forming plasma generated EUV light source optical elements, e.g., reflectors comprising MLM stacks employing various binary layer materials and capping layer(s) including single and binary capping layers for utilization in plasma generated EUV light source chambers, particularly where the plasma source material is reactive with one or more of the MLM materials.

Abstract: A lithographic apparatus includes a source for generating radiation, an illumination system for conditioning the radiation, a patterning device for patterning the conditioned radiation, and a projection system for projecting the patterned radiation onto a target portion of a substrate. The illumination system includes a debris mitigating system for mitigating debris particles that are released with the generation of radiation, and an optical system for collecting the radiation. The debris mitigation system is arranged to directly evaporate the debris particles, or to directly charge the debris particles, or to directly produce a plasma out of the debris particles, or any combination thereof, in a path along which the radiation propagates from the source to the optical system.

Abstract: A thin, light-weight, flexible sheet product useful for the manufacture of radiation attenuation garments. The sheet product is a polymeric material and includes a heavy loading of high molecular weight metal particles. The sheet product is formed from a polymer latex dispersion into which a high molecular weight metal particles are dispersed, where the latex retains a sufficiently low viscosity to be pourable and allow casting of the sheet product.

Abstract: An optical element is placed in the alignment beam during alignment. The optical element serves to focus the alignment beam onto the substrate alignment mark when it is at a different focal length from the front surface of the substrate.

Abstract: A map of the surface of a substrate is generated at a measurement station. The substrate is then moved to where a space between a projection lens and the substrate is filled with a liquid. The substrate is then aligned using, for example, a transmission image sensor and, using the previous mapping, the substrate can be accurately exposed. Thus the mapping does not take place in a liquid environment.

Abstract: A flowmeter has a variable area, vertically-oriented duct through which flows fluid whose flow rate is to be determined. A float in the duct assumes a position in the duct that depends on the flow rate of fluid in the duct. A window is located at an end of the duct in alignment with a longitudinal axis of the duct. A transducer unit projects a light beam through the window and along the axis toward the float. The transducer includes a light sensor that detects light returned by the float by reflection or some other mechanism to the transducer unit. The intensity or other characteristic of the returned light indicates the position of the float in the duct, from which the fluid flow rate may be determined.

Abstract: An image information readout exposure apparatus includes: a first light source, for performing readout scanning exposure on an image information recording medium, on which image information is recordable as an electrostatic latent image, to read out image information recorded thereon; and a second light source, for performing scanning exposure on the image information recording medium, which is different from the readout scanning exposure performed by the first light source. The first and second light sources include an integrated illuminating portion and means for scanning the illuminating portion. The first and second light sources may be linear light sources. If so, the illuminating portion may include an optical path changing means, for changing an optical path of light emitted from at least one of the first and second light sources, so that a position illuminated by the first light source and a position illuminated by the second light source substantially match.

Abstract: A radiation image conversion panel is disclosed, comprising on a support a stimulable phosphor layer comprising a stimulable phosphor, wherein the stimulable phosphor layer is layer formed of columnar crystals of a parent component of a stimulable phosphor and further thereon a layer formed of columnar crystals of the parent component and an activator component, wherein the second columnar crystals are formed with (200) orientation through vapor deposition. There is also disclosed a preparation method thereof.

Abstract: A nitride based 3-5 group compound semiconductor light emitting device comprising: a substrate; a buffer layer formed above the substrate; a first In-doped GaN layer formed above the buffer layer; an InxGa1—xN/InyGa1?yN super lattice structure layer formed above the first In-doped GaN layer; a first electrode contact layer formed above the InxGa1—xN/InyGa1?yN super lattice structure layer; an active layer formed above the first electrode contact layer and functioning to emit light; a second In-doped GaN layer; a GaN layer formed above the second In-doped GaN layer; and a second electrode contact layer formed above the GaN layer. The present invention can reduce crystal defects of the nitride based 3-5 group compound semiconductor light emitting device and improve the crystallinity of a GaN GaN based single crystal layer in order to improve the performance of the light emitting device and ensure the reliability thereof.

Abstract: An organic semiconductor material comprising a compound which has a generalized porphyrin skeleton and which has a molecular structure such that the distance from the generalized porphyrin ring plane to the center of each atom forming the generalized porphyrin skeleton, is not more than 1 ?.

Abstract: An image display device which includes a display pixel block and circuit blocks peripheral thereto. Each block has a circuit made of high-performance thin film transistors. The display pixel block and the peripheral circuit blocks including the four corners of the display device are formed on an image display device substrate of circuit-built-in type thin film transistors having a small circuit occupation surface area. A circuit including thin film transistors of a polycrystalline silicon film anisotropically crystal-grown and having crystal grains aligned in its longitudinal direction with a current direction is provided in the whole or partial surface of the display pixel block and circuit blocks. The longitudinal direction is aligned with a horizontal or vertical direction within the block, and blocks aligned in the horizontal and vertical directions can be arranged as mixed when viewed from an identical straight line.

Abstract: A Three-Dimensional Structure (3DS) Memory allows for physical separation of the memory circuits and the control logic circuit onto different layers such that each layer may be separately optimized. One control logic circuit suffices for several memory circuits, reducing cost. Fabrication of 3DS memory involves thinning of the memory circuit to less than 50 ?m in thickness and bonding the circuit to a circuit stack while still in wafer substrate form. Fine-grain high density inter-layer vertical bus connections are used. The 3DS memory manufacturing method enables several performance and physical size efficiencies, and is implemented with established semiconductor processing techniques.

Abstract: A mask and its application in sequential lateral solidification (SLS) crystallization of amorphous silicon are provided. The mask includes a light absorptive portion for blocking a laser beam and a plurality of stripe-shaped light transmitting portions for passing the laser beam. Each stripe-shaped light transmitting portion is rectangular-shaped, and each light-transmitting portion includes triangular-shaped or semicircular-shaped edges on both sides. The distance between the adjacent light transmitting portions is less than the width of the light transmitting portion. The width of the light transmitting portions is less than or equal to twice the maximum length of lateral grain growth that is to be grown by sequential lateral solidification (SLS).

Abstract: An ultraviolet sensor includes a substrate; a diamond layer, placed on the substrate, functioning as a detector; and at least one pair of surface electrodes arranged on the diamond layer. The diamond layer has a detecting region present at the surface thereof, the detecting region has at least one sub-region exposed from the surface electrodes, and the sub-region has a covering layer, made of oxide or fluoride, lying thereon. A method for manufacturing the ultraviolet sensor includes a step of forming a diamond layer, functioning as a detector, on a substrate; a step of forming at least one pair of surface electrodes on the diamond layer; and a step of forming a covering layer, made of oxide or fluoride, on at least one sub-region of a detecting region present at the surface of the diamond layer, the sub-region being exposed from the surface electrodes.

Abstract: An LED surface light source is provided. The LED surface light source includes: an upper plate having a light emitting part for emitting an LED light and a reflector; a plurality of LEDs regularly arranged in horizontal and vertical directions; and a lower plate on which the plurality of LED are arranged and supported.

Abstract: An electronic device includes a substrate having a primary surface, an array lying along the primary surface, wherein the array includes one or more radiation-emitting components, one or more radiation-responsive components, or any combination thereof, and a first edge connector. In a direction parallel to the primary surface, the first edge connector lies between the array and a perimeter of the substrate. In one embodiment, the electronic device is designed, such that during normal operation, the first edge connector has a temperature difference, due to current flow through the first edge connector, of no more than 10° C. In another embodiment, the array has an emission homogeneity of at least 75% over a lifetime of the electronic device. The electronic device can be operated with good emission intensity and have an extended electronic device lifetime compared to an electronic device having edge connectors that can cause local heating.

Abstract: A high power, high luminous flux light emitting diode (LED) comprises a substrate, a light-emitting structure, a first electrode and a second electrode. The LED has a top surface layout design in which the first electrode has a number of legs extending in one direction, and the second electrode has a number of legs extending in the opposite direction. At least portions of the legs of the first electrode are interspersed with and spaced apart from portions of the legs of the second electrode. This provides a configuration that enhances current spreading along the length of the legs of both electrodes.

Abstract: According to the nitride semiconductor device with the active layer made of the multiple quantum well structure of the present invention, the performance of the multiple quantum well structure can be brought out to intensify the luminous output thereof thereby contributing an expanded application of the nitride semiconductor device. In the nitride semiconductor device comprises an n-region having a plurality of nitride semiconductor films, a p-region having a plurality of nitride semiconductor films, and an active layer interposed therebetween, a multi-film layer with two kinds of the nitride semiconductor films is formed in at least one of the n-region or the p-region.

Abstract: A GaN compound semiconductor device can be capable of free process design and can have optimum device characteristics. The device can include a group III nitride compound semiconductor laminate structure including an n-type GaN compound semiconductor layer and a p-type GaN compound semiconductor layer. An n electrode can be formed on the n-type GaN compound semiconductor layer, and a p electrode can be formed on the p-type GaN compound semiconductor layer. The n electrode preferably includes an Al layer of 1 to 10 nm, in contact with the n-type GaN compound semiconductor layer, and any metal layer of Rh, Ir, Pt, and Pd formed on the Al layer. The p electrode can be made of a 200 nm or less layer of of Pd, Pt, Rh, Pt/Rh, Pt/Ag, Rh/Ag, Pd/Rh, or Pd/Ag, in contact with the p-type GaN compound semiconductor layer. Both electrodes can make ohmic contact with respective n-type/p-type GaN semiconductors without application of active annealing.

Abstract: A liquid crystal display (LCD) device having non-white and white light emitting diodes and a liquid crystal display. A spectrum converting material is positioned between non-white LEDs and the LCD to convert the non-white light from the LEDs toward a white light spectrum. The liquid crystal display may include a plurality of light emitting diodes, a light pipe, and a spectrum converting material. The spectrum converting material may be a phosphorized material located between the plurality of non-white light emitting diodes and the light pipe. A light extracting surface may be located near a first surface of the light pipe, a diffuser located near a second side of the light pipe, where the first and second sides are opposite sides of the light pipe, a reflective polarizer, and an liquid crystal display. The light from the light pipe may passes through the diffuser, the reflective polarizer, before backlighting the liquid crystal display. The non-white LEDs may include blue LED, ultraviolet LEDs, and the like.

Abstract: Provided are a nitride-based light emitting device using a p-type conductive transparent thin film electrode layer and a method of manufacturing the same. The nitride-based light emitting device includes a substrate, and an n-cladding layer, an active layer, a p-cladding layer and an ohmic contact layer sequentially formed on the substrate. The ohmic contact layer is made from a p-type conductive transparent oxide thin film. The nitride-based light emitting device and method of manufacturing the same provide excellent I-V characteristics by improving characteristics of an ohmic contact to a p-cladding layer while enhancing light emission efficiency of the device due to high light transmittance exhibited by a transparent electrode.

Abstract: A light-emitting element including a light-emitting thyristor and a schottky barrier diode is provided. A schottky barrier diode is formed by contacting a metal terminal to a gate layer of a three-terminal light-emitting thyristor consisting of a PNPN-structure. A self-scanning light-emitting element array may be driven at 3.0 V by using such a schottky barrier diode as a coupling diode of a diode-coupled self-scanning light-emitting element array.

Abstract: In multiple port chip circuit, an ESD protection circuit and method of protecting the ports of the multiple port circuit, includes providing a plurality of bi-directional snapback devices such as DIACs and connecting only one electrode to ground while connecting the other electrodes to the ports that are to be protected.

Abstract: In a photosensitive part 10, arranged from pixels A aligned in n rows and m columns, supply wiring lines 13a and 13b, which are electrically connected and apply transfer voltages to transfer electrodes 12a to 12d, formed of polycrystalline silicon, are installed so as to cover parts of the top surfaces of light-shielded pixels D. Dead zones for installing supply wiring lines, which existed priorly at the respective end parts in a horizontal direction of a photosensitive part, can thereby be eliminated and the photosensitive part can be made wide. Also, in the case where a plurality of the solid-state image pickup devices are used upon being made adjacent each other in the horizontal direction, parts at which image pickup is not carried out can be lessened. Also, the amount of lowering of the amounts of incident light on light-shielded pixels D can be corrected based on the output signals from light-shielded pixels D or other pixels A.

Abstract: Embodiments of a transition metal alloy having an n-type or p-type work function that does not significantly shift at elevated temperature. The disclosed transition metal alloys may be used as, or form a part of, the gate electrode in a transistor. Methods of forming a gate electrode using these transition metal alloys are also disclosed.

Abstract: A semiconductor device structure is provided which includes a first semiconductor device; a second semiconductor device; and a unitary stressed film disposed over both the first and second semiconductor devices. The stressed film has a first portion overlying the first semiconductor device, the first portion imparting a first magnitude compressive stress to a conduction channel of the first semiconductor device, the stressed film further having a second portion overlying the second semiconductor device, the second portion not imparting the first magnitude compressive stress to a conduction channel of the second semiconductor device, the second portion including an ion concentration not present in the second portion such that the second portion imparts one of a compressive stress having a magnitude much lower than the first magnitude, zero stress, and a tensile stress to the conduction channel of the second semiconductor device.

Abstract: Floating conducting regions at floating potentials are placed on a substrate surface between adjacent conducting regions to which predetermined potentials are applied. This makes it possible to block the spread of a depletion layer to the substrate between the conducting impurity regions. Thus, the leakage of high-frequency signals can be suppressed. In particular, in a case where a floating conducting region is placed between a peripheral impurity region of a common input terminal pad and a resistor in a switch circuit device, it is possible to suppress the leakage of high-frequency signals from an input terminal to control terminals which become high frequency GND and to suppress an increase in insertion loss.

Abstract: A method for manufacturing a semiconductor substrate of a first concentration type is described, which comprises at least a buried insulating cavity, comprising the following steps: forming on the semiconductor substrate a plurality of trenches, forming a surface layer on the semiconductor substrate in order to close superficially the plurality of trenches forming in the meantime at least a buried cavity in correspondence with the surface-distal end of the trenches.

Abstract: A solid state image sensing device is composed of a second conductive type well area 33, a photoelectric conversion area 40, a ring shaped gate electrode 35, a transfer gate electrode 41, a second conductive type drain area 38, a second conductive type source area 36, and a first conductive type source neighborhood area 37.

Abstract: In a pixel part, in a first active region, a photodiode and a transferring transistor are formed. In a second active region, a resetting transistor is formed. In a pixel part, in a first active region, a photodiode and a transferring transistor are formed. In a second active region, an amplifying transistor is formed. The first and second active regions are respectively the same in shape in image pixel parts. The resetting transistor and the amplifying transistor are shared by the pixel parts.

Abstract: A thermally written magnetic memory device is disclosed. The thermally written magnetic memory device includes a plurality of thermally written magnetic tunnel junction devices. Each thermally written magnetic tunnel junction device includes a super-paramagnetically stable data layer. The data layer includes a high coercivity at a read temperature such that a bit of data previously written to the data layer at a higher write temperature can be read from the data layer at the read temperature. The data layer has a low coercivity at the higher write temperature and data is written to the data layer at the higher write temperature. Therefore, at the lower read temperature, the thermally written magnetic memory device is a read only non-volatile memory and the data stored therein can be read many times but new data cannot be written to the data layer at the read temperature.

Abstract: A ferroelectric memory device includes a first bit line, a second bit line provided adjacent to the first bit line, a first memory cell block including a first terminal, a second terminal, and a plurality of memory cells connected in series between the first and second terminals and arranged in a first direction along the first bit line connected to the first terminal by a first block select transistor, a second memory cell block including a plurality of memory cells, and a plurality of first contacts arranged between the first and second memory cell blocks, each first contact connecting the upper electrode and drain or source electrode of one memory cell.

Abstract: A quantum supercapacitor having nanostrucutured material located between electrodes. The material includes clusters with tunnel-transparent gaps. The clusters have sizes within the range of 7.2517 nm?r?29.0068 nm, at which the resonant characteristics of the electron are exhibited. The size is determined by the circular radius of the electronic wave according to the formula r0=/(me?2c)=7.2517 nm (Plank constant , electron mass me, fine structure constant ?=1/137,036, speed of light c). The cluster size is set within the range r0?4r0; the width of the tunnel-transparent gap being ?r0=7.2517 nm. The energy in the supercapacitor is stored by means of controlled breakthrough of the material—a dielectric, with subsequent restoring thereof. The energy is stored uniformly along the whole volume of the material due to the resonant coupling of the electrons on the cluster. The maximum stored specific energy stored is 1.66 MJ/kg.