Patents Issued in April 24, 2007
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Patent number: 7208725Abstract: Provided are optoelectronic components which include a substrate having a front surface, a back surface and a trench in the front surface, an optoelectronic device in the trench, and an encapsulant filling the trench frush to the front surface, wherein the encapsulant provides an optical surface.Type: GrantFiled: May 9, 2005Date of Patent: April 24, 2007Assignee: Rohm and Haas Electronic Materials LLCInventors: David W. Sherrer, Noel A. Heiks
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Patent number: 7208726Abstract: An apparatus for analyzing ions is described. The apparatus includes an ion source, an ion trap positioned to receive ions from the ion source; a time of flight mass analyzer, and a detector operatively coupled to the time of flight. The time of flight mass analyzer includes a pulser region, and the pulser region is positioned to receive ions from the ion trap. The apparatus further includes a scanning delay timing circuit in operable relation to the pulser region. The scanning delay timing circuit is adapted to triggering an extraction pulse at the pulser region. Methods of analyzing ions by mass spectrometry are also described.Type: GrantFiled: August 27, 2004Date of Patent: April 24, 2007Assignee: Agilent Technologies, Inc.Inventors: August Hidalgo, Stuart C. Hansen, Gangqiang Li
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Patent number: 7208727Abstract: Electrospray systems, electrospray structures, removable electrospray structures, methods of operating electrospray systems, and methods of fabricating electrospray systems, are disclosed.Type: GrantFiled: August 31, 2004Date of Patent: April 24, 2007Assignee: Georgia Tech Research CorporationInventors: Andrei G. Fedorov, F. Levent Degertekin
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Patent number: 7208728Abstract: A mass spectrometer capable of analyzing a wide mass range with high sensitivity and high mass accuracy.Type: GrantFiled: November 29, 2004Date of Patent: April 24, 2007Assignee: Hitachi High-Technologies CorporationInventors: Yuichiro Hashimoto, Takashi Baba, Hideki Hasegawa, Izumi Waki
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Patent number: 7208729Abstract: A method of constructing a micro-engineered mass spectrometer from bonded silicon-on-insulator (BSOI) wafers is described with reference to a quadrupole spectrometer. The quadrupole geometry is achieved using two BSOI wafers (200), which are bonded together to form a monolithic block (410). Deep etched features and springs formed in the outer silicon layers are used to locate cylindrical metallic electrode rods (300). The precision of the assembly is determined by a combination of lithography and deep etching, and by the mechanical definition of the bonded silicon layers. Deep etched features formed in the inner silicon layers are used to define ion entrance and ion collection optics. Other features such as fluidic channels may be incorporated.Type: GrantFiled: July 29, 2003Date of Patent: April 24, 2007Assignee: Microsaic Systems LimitedInventor: Richard Syms
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Patent number: 7208730Abstract: A system manipulates molecules using a set of proximal probes such as those used in atomic force microscopes. An electrostatic pattern is placed on a set of proximal probes such that each proximal probe may exert an electrostatic force. A molecule is captured using those electrostatic forces, after which the molecule can be manipulated while the molecule remains captured by the proximal probes. The electrostatic pattern can be modified such that the molecule moves and/or rotates over the set of proximal probes while the molecule remains captured by the set of proximal probes. The electrostatic pattern can be used to bend or split the molecule while the molecule remains captured by the set of proximal probes, thereby allowing the system to engage the molecule in chemical reactions, e.g., to act as a synthetic catalyst or a synthetic enzyme.Type: GrantFiled: October 14, 2004Date of Patent: April 24, 2007Assignee: International Business Machines CorporationInventor: Viktors Berstis
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Patent number: 7208731Abstract: The charged particle beams is provided, which can analyze contamination of the inner wall of the system without being disassembled and supply information on appropriate maintenance timing. The contamination level of the inner wall of the system is identified by measuring the spectrum of the X-rays emitted from the inner wall due to irradiation of a charged particle beam or a recoil electron.Type: GrantFiled: May 22, 2006Date of Patent: April 24, 2007Assignee: Hitachi, Ltd.Inventor: Takashi Onishi
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Patent number: 7208732Abstract: A dicorotron unit and a wire assembly of a dicorotron unit where a wire electrode is strung between two insulator anchors. The anchors are held in place by flexible grippers. The grippers have flexible tabs that snap into the dicorotron housing and allow the grippers to remain in this housing when the wire assembly is removed from the dicorotron unit.Type: GrantFiled: September 27, 2005Date of Patent: April 24, 2007Inventors: Jamie S. Clayfield, S. Chad Velk
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Patent number: 7208733Abstract: A non-visible radiation imaging system is provided in which an image is obtained based on non-visible radiation of an object. The image can be enhanced to increase its resolution. Additionally, the image can be combined with another image based on visible light for the object. Further, a non-visible radiation inspection system and method are provided that perform an inspection of the object using one or more of the images.Type: GrantFiled: May 4, 2005Date of Patent: April 24, 2007Assignee: International Electronic Machines Corp.Inventors: Zahid F. Mian, Jeremy C. Mullaney, Ryk E. Spoor
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Patent number: 7208734Abstract: In an infrared detector array according to the present invention, on a thin film with a periphery portion supported by a frame, three or more infrared detecting pixels are arranged in an array pattern so that the hot junctions of thermocouples are arranged above a concave portion and the cold junctions thereof are arranged above the frame. Compensation means is provided which compensates for a difference between the detection sensitivity of the infrared detecting pixel arranged in a peripheral end portion and the detection sensitivity of the infrared detecting pixel arranged in an intermediate portion based on a correlation between electromotive force extracted when the infrared detecting pixel is illuminated with infrared radiation and its position. Owing to this configuration, a plurality of infrared detecting pixels can be integrated and the sensitivity thereof can be made sufficiently high and uniform.Type: GrantFiled: July 10, 2002Date of Patent: April 24, 2007Assignee: Hamamatsu Photonics K.K.Inventor: Katsumi Shibayama
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Patent number: 7208735Abstract: Infrared radiation from a plurality of locations associated with a process is measured by a field device, which includes a plurality of input channels, a plurality of IR sensors, and a data processor. The infrared radiation from the locations associated with the process is received by the input channels and the intensity of the infrared radiation is measured by the IR sensors to produce representative sensor signals. The data processor produces an output as a function of selected sensor signals.Type: GrantFiled: June 8, 2005Date of Patent: April 24, 2007Assignee: Rosemount, Inc.Inventors: Gabriel Lazaro Sierra, Marcos Antonio Peluso, Loren Michael Engelstad, William Thomas Anderson
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Patent number: 7208736Abstract: An infrared sensor device includes an infrared sensor element in which a membrane is formed on a surface side of a substrate by forming a concave portion on a rear face side of the substrate, and electrodes for detection are arranged on the surface side of the substrate, and an infrared ray absorbing film for absorbing the energy of an infrared ray by receiving the infrared ray is arranged at the membrane on the rear face side of said substrate. The substrate is electrically connected to a circuit substrate through a bump in a state in which the surface side of the substrate is opposed to the circuit substrate.Type: GrantFiled: July 28, 2005Date of Patent: April 24, 2007Assignee: Denso CorporationInventor: Kazuaki Watanabe
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Patent number: 7208737Abstract: The invention relates to a photoacoustic detector, comprising at least a first chamber (V0) suppliable with a gas to be analyzed, a window for letting modulated and/or pulsed infrared radiation and/or light in the first chamber (V0), a second chamber (V), which constitutes a measuring space with a volume V and which is in communication with the first chamber by way of an aperture provided in a wall of the first chamber, at least one sensor, which is arranged in the wall aperture of the first chamber and arranged to be movable in response to pressure variations produced in the first chamber by absorbed infrared radiation and/or light, and means for measuring the sensor movement. The means for measuring the sensor movement include at least one or more light sources for illuminating the sensor or a part thereof and one or more multi-detector detectors for the reception of light reflected from the sensor and for measuring the sensor movement as optical angular and/or translatory measurement.Type: GrantFiled: September 19, 2003Date of Patent: April 24, 2007Assignee: Noveltech Solutions, Ltd.Inventor: Jyrki Kauppinen
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Patent number: 7208738Abstract: A light source is disclosed. The light source has a light-emitting chip that includes an LED that generates light in an active region thereof. The LED emits a light signal in a forward direction, and infrared radiation generated in the active region is emitted in a side direction in the form of a first infrared signal. The first light signal is determined by a first drive signal coupled to the LED. The light source also includes an infrared detector positioned to collect a portion of the infrared signal. The infrared detector generates a heat signal indicative of the amount of infrared radiation detected. A controller generates the drive signal so as to maintain the heat signal at a first target value. In light sources having LEDs that emit in different spectral ranges, the infrared detectors can all detect heat in the same spectral range.Type: GrantFiled: February 28, 2005Date of Patent: April 24, 2007Inventors: Sundar Natarajan Yoganandan, Fakhrul Arifin Mohd. Afif, Klan Shin Lee, Slew It Pang, Kheng Leng Tan, Yew Cheong Kuan, Su Lin Oon, Wen Ya Ou, Norfidathul Aizar Abdul Karim, Thye Linn Mok
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Patent number: 7208739Abstract: A method for correcting at least one of pileup effects or charge sharing effects in multi-cell photon counting detectors includes determining a correction coefficient using a count rate of an entire spectrum and applying the determined correction to the counts recorded in an energy window of interest.Type: GrantFiled: November 30, 2005Date of Patent: April 24, 2007Assignee: General Electric CompanyInventors: Brian David Yanoff, Wen Li
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Patent number: 7208740Abstract: A pixelated detector assembly comprising a stack of thin detector crystals, each detector crystal having a pair of planar surfaces bound by edges substantially thinner than the dimensions of the surfaces. The stack is disposed such that the radiation to be detected is incident on one set of edges of the stack of detector crystals. The dimension of the planar surfaces in the general direction of incidence of the radiation incidence is sufficient to ensure that substantially all of the high energy photons to be detected are absorbed within the depth of the detector assembly. Each of the detector crystals has a two-dimensional pixelated anode array formed on one of its planar surfaces. A cathode is formed on its opposite planar surface, preferably covering substantially all of the surface.Type: GrantFiled: May 9, 2006Date of Patent: April 24, 2007Assignee: Orbotech Medical Solutions Ltd.Inventors: Uri El-Hanany, Arie Shahar, Shimon Klier, Alex Tsigelman, Eldan Halberthal
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Patent number: 7208741Abstract: An X-ray detection system has a detector and a data acquisition unit. The detector detects an X-ray passing through a body and producing an analog electric signal for each channel. The data acquisition unit includes a plurality of circuit blocks each including as many circuits as the number of channels assigned to each block. The data acquisition unit converts the analog electric signal into a digital signal for each channel and outputs the resultant digital signal. A phase control unit controls the phase of the circuit blocks such that the circuit blocks are grouped into a plurality of groups. The respective groups operate in synchronization with clock signals for the data acquisition unit. Phases of the clock signals are mutually different at least between two groups.Type: GrantFiled: November 26, 2004Date of Patent: April 24, 2007Assignees: Kabushiki Kaisha Toshiba, Toshiba Medical Systems CorporationInventors: Naoki Sugihara, Michito Nakayama, Tatsuro Suzuki
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Patent number: 7208742Abstract: A photodetector for X-ray applications is disclosed incorporating a photodiode design with reduced leakage at each pixel location. The photodiode is of a reduced surface area and has a peripheral edge of reduced length. The length may be minimized by making the photodiode round. The diode is surrounded by a reflective layer that may act as a contact for the diode. Photons are reflected by the reflective layer back towards the reduced area diode to maintain good sensitivity. The reflective/contact layer may form a capacitor with another contact layer by disposing a dielectric layer therebetween, thereby increasing the effective capacitance of the photodiode.Type: GrantFiled: December 15, 2005Date of Patent: April 24, 2007Assignee: General Electric CompanyInventors: Scott Stephen Zelakiewicz, Douglas Albagli, William Andrew Hennessy, Aaron Judy Couture
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Patent number: 7208743Abstract: The invention relates to an instrument which uses an individual semi-conductive detector with special coverings as an essential sensor, and a method whereby the amplitude information of the signals from said semi-conductive detector are used to determine a person's dose in mixed neutron/photon-fields. Said instrument is highly sensitive and has a low energy dependency. It is possible for the dose to be read directly, and to emit a warning if the dose limit is exceeded. The inventive method enables a compact person's dose meter, which is immune to interference, to be produced with low power consumption.Type: GrantFiled: July 9, 2002Date of Patent: April 24, 2007Assignee: Bundesrepublik Deutschland, vertreten durch das Bundesministerium für Wirtschaft und Arbeit, dieses wiederum vertreten durch den Präsidenten der Physikalisch-Technischen BundesanstaltInventors: Marlies Luszik-Bhadra, Wilfried Wendt
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Patent number: 7208744Abstract: A radiation image storage panel composed at least of a phosphor layer containing energy-storable phosphor particles and a light-reflecting layer provided on one side of the phosphor layer, in which the energy-storable phosphor particles are composed of at least two kinds of particles having different mean sizes, one of which is composed of smaller particles having a mean size of 2.0 to 4.0 ?m and the other of which is composed of larger particles having a mean size of 6.0 to 15 ?m, and a weight ratio between the smaller particles and the larger particles is in the range of 10:90 to 50:50 (former:latter), and in which the light-reflecting layer gives a scattering length of 5 ?m or less (the scattering length is for a stimulating light).Type: GrantFiled: February 23, 2005Date of Patent: April 24, 2007Assignee: Fujifilm CorporationInventors: Hiroshi Matsumoto, Hiroki Saito, Hideki Suzuki
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Patent number: 7208745Abstract: An object of the present invention is to provide a radiation image conversion panel exhibiting excellent sharpness, excellent graininess and high luminance, accompanied with high aging performance. Also disclosed is a radiation image conversion panel possessing an alkali metal halide based stimulable phosphor layer formed by a vapor deposition method, provided on a support, wherein a stimulable phosphor possesses at least two kinds of halides, and a phosphor columnar crystal in the stimulable phosphor layer has a core/shell structure.Type: GrantFiled: August 3, 2006Date of Patent: April 24, 2007Assignee: Konica Minolta Medical & Graphic, Inc.Inventor: Keiko Maeda
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Patent number: 7208746Abstract: A device for generating radiation source based on a discharge includes a cathode and an anode. The cathode and anode material are supplied in fluid state. The material forms a plasma pinch when the device is in use. Optionally, nozzles may be used to supply the material. The cathode and/or anode may form a flat surface. The trajectories of the material may be elongated. A laser may be used to cause the discharge more easily. The laser may be directed on the anode of cathode or on a separate material located in between the anode and cathode.Type: GrantFiled: July 14, 2004Date of Patent: April 24, 2007Assignee: ASML Netherlands B.V.Inventors: Konstantin Nikolaevitch Koshelev, Vladimir Vitalevitch Ivanov, Evgenii Dmitreevitch Korob, Givi Georgievitch Zukavishvili, Robert Rafilevitch Gayazov, Vladimir Mihailovitch Krivtsum
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Patent number: 7208747Abstract: According to an embodiment of the invention, an adjustable EUV light source may be used for photolithography. The EUV light source, such as an electrode, is mounted in an adjustable housing. The housing can be adjusted to change the distance between the light source and focusing mirrors, which in turn changes the partial coherence value of the system. The partial coherence value can be changed to print different types of semiconductor features.Type: GrantFiled: May 12, 2006Date of Patent: April 24, 2007Assignee: Intel CorporationInventors: Manish Chandhok, Eric M. Panning, Bryan J. Rice
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Patent number: 7208748Abstract: Interposing a programmable path length of one or more materials into a particle beam modulates scattering angle and beam range in a predetermined manner to create a predetermined spread out Bragg peak at a predetermined range. Materials can be “low Z” and “high Z” materials that include fluids. A charged particle beam scatterer/range modulator can comprise a fluid reservoir having opposing walls in a particle beam path and a drive to adjust the distance between the walls of the fluid reservoir under control by a programmable controller. A “high Z” and, independently, a “low Z” reservoir, arranged in series, can be used. When used for radiation treatment, the beam can be monitored by measuring beam intensity, and the programmable controller can adjust the distance between the opposing walls of the “high Z” reservoir and, independently, the distance between the opposing walls of the “low Z” reservoir according to a predetermined relationship to integral beam intensity.Type: GrantFiled: September 24, 2004Date of Patent: April 24, 2007Assignee: Still River Systems, Inc.Inventors: Alan Sliski, Kenneth Gall
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Patent number: 7208749Abstract: The invention is directed to an ultrasonic testing system. The system tests a manufactured part for various physical attributes, including specific flaws, defects, or composition of materials. The part can be housed in a gantry system that holds the part stable. An energy generator illuminates the part within energy and the part emanates energy from that illumination. Based on the emanations from the part, the system can determined precisely where the part is in free space. The energy illumination device and the receptor have a predetermined relationship in free space. This means the location of the illumination mechanism and the reception mechanism is known. Additionally, the coordinates of the actual testing device also have a predetermined relationship to the illumination device, the reception device, or both.Type: GrantFiled: August 21, 2003Date of Patent: April 24, 2007Assignee: Lockheed Martin CorporationInventor: Thomas E. Drake, Jr.
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Patent number: 7208750Abstract: A radiation image reading apparatus includes an image reading section for reading a radiation image on a stimulable phosphor sheet by scanning the stimulable phosphor sheet with exciting light in a main scanning direction, and a conveying section having a windable member to hold the stimulable phosphor sheet, a supporting member to support the windable member, and a driving section to move the windable member so as to convey the stimulable phosphor sheet to the image reading section in a sub scanning direction. The apparatus further includes a vibration damping mechanism being in contact with the windable member to damp vibration of the windable member, and a vibration refraining mechanism being in contact with the vibration damping mechanism to refrain vibration of the vibration damping mechanism itself.Type: GrantFiled: February 2, 2005Date of Patent: April 24, 2007Assignee: Konica Minolta Medical & Graphic, Inc.Inventor: Masahiro Umemura
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Patent number: 7208751Abstract: Dummy cells are disposed in alignment with memory cells arranged in rows and columns in a memory array. The memory cell includes a variable resistance element and a select transistor having a collector connected to a substrate region and selecting the variable resistance element in response to a row select signal. Corresponding to a row of memory cells, there is provided a word line connecting to memory cells on corresponding row and transmitting the row select signal, and a word line shunting line electrically connected at predetermined intervals to each word line. Moreover, corresponding to a row of dummy cells and a column of dummy cells, there is provided substrate shunt lines electrically connected to the substrate region. The voltage distribution in the substrate region is eliminated to achieve stable operating characteristics of the memory cell transistor. In addition, a word line is driven at high speed by a word line shunt structure.Type: GrantFiled: March 18, 2003Date of Patent: April 24, 2007Assignee: Renesas Technology Corp.Inventor: Tsukasa Ooishi
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Patent number: 7208752Abstract: A structure of a gallium nitride light emitting diode has a transparent conductive window layer including a diffusion barrier layer, an ohmic contact layer, and a window layer. By using the added domain contact layer, the diffusion barrier layer and the P-type semiconductor layer of the light emitting diode are put into ohmic contact. And then, the rising of the contact resistivity is barred by applying the diffusion barrier layer to block the diffusion of the window layer from the contact with the domain contact layer so as to lower down the operating voltage and advance the transparency.Type: GrantFiled: May 7, 2004Date of Patent: April 24, 2007Assignee: Supernova Optoelectronics CorporationInventors: Mu-Jen Lai, Schang-Jing Hon, Hsueh-Feng Sun, Shih-Ming Yang
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Patent number: 7208753Abstract: A transistor having a bottom dielectric layer, a first layer, a second layer, a top dielectric layer, and a gate electrode. The first layer and the second layer form a composite quantum well between the bottom dielectric layer and the top dielectric layer. The first layer, the second layer, and the top dielectric layer are configured to form a hole wire in the first layer. The gate electrode is over a portion of the hole wire and divides the top dielectric layer into a source contact and a drain contact.Type: GrantFiled: February 24, 2006Date of Patent: April 24, 2007Assignee: The United States of America as represented by the Secretary of the NavyInventors: Ming Yang, Chia-Hung Yang, Yuli Lyanda-Geller
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Patent number: 7208754Abstract: A semiconductor device includes a substrate, a first epitaxial layer, a second epitaxial layer, a third epitaxial layer, a first trench, and a second trench. The first epitaxial layer is formed on the substrate. The first layer has lattice mismatch relative to the substrate. The second epitaxial layer is formed on the first layer, and the second layer has lattice mismatch relative to the first layer. The third epitaxial layer is formed on the second layer, and the third layer has lattice mismatch relative to the second layer. Hence, the third layer may be strained silicon. The first trench extends through the first layer. The second trench extends through the third layer and at least partially through the second layer. At least part of the second trench is aligned with at least part of the first trench, and the second trench is at least partially filled with an insulating material.Type: GrantFiled: April 26, 2005Date of Patent: April 24, 2007Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chung-Hu Ge, Wen-Chin Lee, Chenming Hu
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Patent number: 7208755Abstract: A light emitting device 1 has formed therein a light emitting layer section 24 based on a double heterostructure in which a p-type cladding layer 34, an active layer 33 and an n-type cladding layer 32, individually composed of a MgaZn1-aO (0?a?1) type oxide, are stacked in this order, and uses a face on the n-type cladding layer side as a light extraction surface. The device also has, as being provided on the main surface on the light extraction surface side of the n-type cladding layer 32, an n-type low resistivity layer 35 composed of a MgaZn1-aO type oxide, and having a content of an n-type dopant larger than that in the n-type cladding layer 32. There is thus provided a light emitting device of MgaZn1-aO-type oxide base, excellent in the light extraction efficiency, having the light emitting layer section composed of a MgaZn1-aO-type oxide, and a high conductivity MgZnO-base compound semiconductor layer disposed on the light extraction surface side.Type: GrantFiled: March 16, 2004Date of Patent: April 24, 2007Assignee: Shin-Etsu Handotai Co., Ltd.Inventor: Jun-ya Ishizaki
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Patent number: 7208756Abstract: Organic semiconductor-based devices such as thin film transistors, organic light emitting devices and solar cells have potential in low cost electronic and optoelectronic applications. The performance of these organic semiconductor-based devices is often limited by the large resistance between the organic semiconductors and counter electrodes. This invention provides device structures and methods to reduce the unwanted resistance.Type: GrantFiled: August 10, 2004Date of Patent: April 24, 2007Inventors: Ishiang Shih, Yi Chen, Chunong Qiu, Cindy X. Qiu, Steven Shuyong Xiao
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Patent number: 7208757Abstract: The present memory structure includes first and second electrodes, a passive layer, and an active layer containing nitrogen, the passive and active layers being between the first and second electrodes. Metal ions in the active layer bind to the nitrogen thereof, enhancing retention of the metal ions in the active layer for improved, stable data retention.Type: GrantFiled: December 23, 2004Date of Patent: April 24, 2007Assignee: Spansion LLCInventors: Richard Kingsborough, Xiaobo Shi, Igor Sokolik, David Gaun, Swaroop Kaza
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Patent number: 7208758Abstract: A semiconductor wafer or other bulk semiconductor substrate having a plurality of dice thereon is manufactured using conventional processing techniques. The wafer is subjected to testing to identify functional and nonfunctional dice. The locations of the functional dice are analyzed to determine the location of immediately adjacent or closely proximate functional dice. A group of functional dice is identified and an interconnection circuit is formed therebetween. The functional die group, once interconnected, is then segmented from the wafer while maintaining the unitary integrity of the functional die group as well as the associated interconnections between dice. Modules including one or more functional die groups and methods of fabricating functional die groups and modules are also disclosed.Type: GrantFiled: September 16, 2003Date of Patent: April 24, 2007Assignee: Micron Technology, Inc.Inventors: Aron T. Lunde, Kevin G. Duesman, Timothy B. Cowles
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Patent number: 7208759Abstract: Functional circuits such as a processor, an SRAM, a DRAM and a flash-EEPROM are mounted on a semiconductor chip. Of these functional circuits, for example, the flash-EEPROM which fluctuates a potential of the semiconductor chip is separated from the other circuits by means of a separating region provided in the semiconductor chip. In addition, the separating region is put in contact with the entire side faces of the semiconductor chip.Type: GrantFiled: April 23, 2004Date of Patent: April 24, 2007Assignee: Kabushiki Kaisha ToshibaInventor: Tomomi Momohara
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Patent number: 7208760Abstract: Physical barriers (210) are present between neighbouring pixels (200) on a circuit substrate (100) of an active-matrix electroluminescent display device, particularly with LEDs (25) of organic semi conductor materials. The invention forms these barriers (210) with metal or other electrically-conductive material (240), that is insulated (40) from the LEDs but connected to the circuitry within the substrate (100). This conductive barrier material (240) backs-up or replaces at least a part of the drive supply line (140,240) to which the LEDs are connected by a drive element T1. This transfers the problem of line resistance and associated voltage drop from within the circuit substrate (100), where it is severely constrained, to the much freer environment of the pixel barriers (210) on the substrate (100) where the conductive barrier material (240) can provide much lower resistance. Very large displays can be made with low voltage drops along this composite drive supply line (140,240).Type: GrantFiled: March 19, 2003Date of Patent: April 24, 2007Assignee: Koninklijke Philips Electronics N.V.Inventors: Jason Roderick Hector, Nigel David Young, David Andrew Fish, Mark Jonathan Childs
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Patent number: 7208763Abstract: In a conventional analog buffer circuit composed of polycrystalline semiconductor TFTs, a variation in the output is large. Thus, a measure such as to provide a correction circuit has been taken. However, there has been such a problem that a circuit and driver operation are complicated. Therefore, a gate length and a gate width of a TFT composing an analog buffer circuit is set to be larger. Also, a multi-gate structure is adopted thereto. In addition, the arrangement of channel regions is devised. Thus, the analog buffer circuit having a small variation is obtained without using a correction circuit, and a semiconductor device having a small variation can be provided.Type: GrantFiled: November 15, 2004Date of Patent: April 24, 2007Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventor: Jun Koyama
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Patent number: 7208764Abstract: A liquid crystal display device 100 comprises a thin film transistor T, a source (data) line 26, a color filter 23, a pixel electrode 24 and the like. After a gate electrode 13, a gate insulating film 16, and a channel region 18 are formed on the glass substrate 10, a polyimide film 20 is formed to surround the peripheries of the region for forming the source/drain regions 22, the color filter 23, the pixel electrode 24, and the source line 26, respectively. A liquid material is applied to the regions surrounded with the wall made of the polyimide film 20 and a thermal treatment is performed to form the element of the color filter 23, the pixel electrode 24 and the like. The polyimide film 20 has a property of light-shielding and then has a function as a black matrix for shielding the surroundings of the pixel region.Type: GrantFiled: April 22, 2003Date of Patent: April 24, 2007Assignee: Seiko Epson CorporationInventor: Masahiro Furusawa
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Patent number: 7208765Abstract: To provide an electronic device capable of bright image display. A pixel is structured such that a switching TFT and a current controlling TFT are formed on a substrate and an EL element is electrically connected to the current controlling TFT. A gate capacitor formed between a gate electrode of the current controlling TFT and an LDD region thereof holds a voltage applied to the gate electrode, and hence a capacitor (condenser) is not particularly necessary in the pixel, thereby making the effective light emission area of the pixel large.Type: GrantFiled: December 23, 2003Date of Patent: April 24, 2007Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Toshimitsu Konuma, Jun Koyama, Kazutaka Inukai, Mayumi Mizukami
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Patent number: 7208766Abstract: Disclosed herein is a semiconductor device with high reliability which has TFT of adequate structure arranged according to the circuit performance required. The semiconductor has the driving circuit and the pixel portion on the same substrate. It is characterized in that the storage capacitance is formed between the first electrode formed on the same layer as the light blocking film and the second electrode formed from a semiconductor film of the same composition as the drain region, and the first base insulating film is removed at the part of the storage capacitance so that the second base insulating film is used as the dielectric of the storage capacitance. This structure provides a large storage capacitance in a small area.Type: GrantFiled: May 2, 2005Date of Patent: April 24, 2007Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Jun Koyama, Hiroshi Shibata, Takeshi Fukunaga
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Patent number: 7208767Abstract: A method and a device for converting energy uses chemical reactions in close proximity to or on a surface to convert a substantial fraction of the available chemical energy of the shorter lived energized products, such as vibrationally excited chemicals and hot electrons, directly into a useful form, such as longer lived charge carriers in a semiconductor. The carriers store the excitation energy in a form that may be converted into other useful forms, such as electricity, nearly monochromatic electromagnetic radiation or carriers for stimulating other surface reactions.Type: GrantFiled: January 17, 2002Date of Patent: April 24, 2007Assignee: NeoKismet LLCInventors: Anthony C. Zuppero, Jawahar M. Gidwani
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Patent number: 7208768Abstract: A method is provided for forming an electroluminescent device. The method comprises: providing a type IV semiconductor material substrate; forming a p+/n+ junction in the substrate, typically a plurality of interleaved p+/n+ junctions are formed; and, forming an electroluminescent layer overlying the p+/n+ junction(s) in the substrate. The type IV semiconductor material substrate can be Si, C, Ge, SiGe, or SiC. For example, the substrate can be Si on insulator (SOI), bulk Si, Si on glass, or Si on plastic. The electroluminescent layer can be a material such as nanocrystalline Si, nanocrystalline Ge, fluorescent polymers, or type II–VI materials such as ZnO, ZnS, ZnSe, CdSe, and CdS. In some aspect, the method further comprises forming an insulator film interposed between the substrate and the electroluminescent layer. In another aspect, the method comprises forming a conductive electrode overlying the electroluminescent layer.Type: GrantFiled: April 30, 2004Date of Patent: April 24, 2007Assignee: Sharp Laboratories of America, Inc.Inventors: Yoshi Ono, Wei Gao, John F. Conley, Jr., Osamu Nishio, Keizo Sakiyama
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Patent number: 7208769Abstract: The invention concerns an LED arrangement with at least one LED chip (11) comprising a radiation decoupling surface (12) through which the bulk of the electromagnetic radiation generated in the LED chip (11) is decoupled. Arranged on the radiation decoupling surface (12) is at least one phosphor layer (13) for converting the electromagnetic radiation generated in the LED chip. A housing (17) envelops portions of the LED chip (11) and the phosphor layer (13).Type: GrantFiled: April 29, 2005Date of Patent: April 24, 2007Assignee: Osram Opto Semiconductor GmbHInventors: Ewald Karl Michael Guenther, Günter Waitl, Herbert Brunner, Jörg Strauss
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Patent number: 7208770Abstract: In photonic integrated circuits (PICs) having at least one active semiconductor device, such as, a buried heterostructure semiconductor laser, LED, modulator, photodiode, heterojunction bipolar transistor, field effect transistor or other active device, a plurality of semiconductor layers are formed on a substrate with one of the layers being an active region. A current channel is formed through this active region defined by current blocking layers formed on adjacent sides of a designated active region channel where the blocking layers substantially confine the current through the channel. The blocking layers are characterized by being an aluminum-containing Group III-V compound, i.e., an Al-III-V layer, intentionally doped with oxygen from an oxide source. Also, wet oxide process or a deposited oxide source may be used to laterally form a native oxide of the Al-III-V layer.Type: GrantFiled: February 16, 2005Date of Patent: April 24, 2007Assignee: Infinera CorporationInventors: Fred A. Kish, Jr., Sheila Hurtt, Charles H. Joyner, Richard P. Schneider
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Patent number: 7208771Abstract: A structure having an optical element thereon has a portion of the structure extending beyond a region having the optical element in at least one direction. The structure may include an active optical element, with the different dimensions of the substrates forming the structure allowing access for the electrical interconnections for the active optical elements. Different dicing techniques may be used to realize the uneven structures.Type: GrantFiled: September 21, 2004Date of Patent: April 24, 2007Assignee: Digital Optics CorporationInventors: Alan D Kathman, Hongtao Han, Jay Mathews, John Barnett Hammond
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Patent number: 7208772Abstract: The invention relates to a high power LED package, in which a package body is integrally formed with resin to have a recess for receiving an LED chip. A first sheet metal member is electrically connected with the LED chip, supports the LED chip at its upper partial portion in the recess, is surrounded by the package body extending to the side face of the package body, and has a heat transfer section for transferring heat generated from the LED chip to the metal plate of the board and extending downward from the inside of the package body so that a lower end thereof is exposed at a bottom face of the package body thus to contact the board. A second sheet metal member is electrically connected with the LED chip spaced apart from the first sheet metal member for a predetermined gap, and extends through the inside of the package body to the side face of the package body in a direction opposite to the first sheet metal member. A transparent sealant is sealingly filled up into the recess.Type: GrantFiled: July 22, 2005Date of Patent: April 24, 2007Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Seon Goo Lee, Chang Wook Kim, Kyung Taeg Han
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Patent number: 7208773Abstract: In a cap for a semiconductor device in which a light transmissive window is fixed to a cap body provided with a light transmissive opening using low-melting glass as a fixing material so that the light transmissive window covers the light transmissive opening, the low-melting glass is leadless vanadate-series low-melting glass, and the light transmissive window is fixed to the cap body through an eutectic alloy layer formed by an eutectic reaction of vanadium contained in the low-melting glass and metal applied on the surface of the cap body.Type: GrantFiled: August 31, 2005Date of Patent: April 24, 2007Assignee: Shinko Electric Industries Co., Ltd.Inventor: Yasushi Hatakeyama
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Patent number: 7208774Abstract: In a semiconductor optical device, a first conductive type semiconductor region is provided on a surface of GaAs. The first conductive type semiconductor region has a first region and a second region. An active layer is provided on the first region of the first conductive type semiconductor region. The active layer has a pair of side surfaces. A second conductive type semiconductor region is provided on the sides and top of the active layer, and the second region of the first conductive type semiconductor region. The bandgap energy of the first conductive type semiconductor region is greater than that of the active layer. The bandgap energy of the second conductive type semiconductor region is greater than that of the active layer. The second region of the first conductive type semiconductor region and the second conductive type semiconductor region constitute a pn junction.Type: GrantFiled: June 15, 2005Date of Patent: April 24, 2007Assignee: Sumitomo Electric Industries, Ltd.Inventors: Jun-ichi Hashimoto, Tsukuru Katsuyama
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Patent number: 7208775Abstract: Spin-polarized electrons can be efficiently extracted from an n-doped semiconductor layer (n-S) by forming a modified Schottky contact with a ferromagnetic material (FM) and a ?-doped layer at an interface under forward bias voltage conditions. Due to spin-selection property of the FM-S junction, spin-polarized carriers appear in the n-doped semiconductor layer near the FM-S interface. If a FM-n-n?-p heterostructure is formed, where the n? region is a narrower gap semiconductor, polarized electrons from the n-S region and holes from the p-S region can diffuse into the n?-S region under the influence of independent voltages applied between the FM and n? regions and the n? and p regions. The polarized electrons and holes recombine in the n?-S region and produce polarized light. The polarization can be controlled and modulated by controlling the applied voltages.Type: GrantFiled: February 18, 2005Date of Patent: April 24, 2007Assignee: Hewlett-Packard Development Company, L.P.Inventors: Viatcheslav V. Osipov, Alexandre M. Bratkovski
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Patent number: 7208776Abstract: A fuse corner pad is part of an integrated circuit that includes a built-in fuse contact and a plurality of auxiliary pads. The fuse contact is a conductive metallic or metalloid structure that is connected to a fuse element. The fuse contact and fuse element are used inside of the fuse corner pad for programmability (e.g., for security) and/or adjustment (e.g., trimming) of analog and/or digital signals. The fuse contact and fuse element are not required to be bonded to an external electrical connection (such as, a pin or ball). The auxiliary pads provide a variety of functional or non-functional applications, such as testing, probing, programming, and/or circuit adjustment.Type: GrantFiled: January 30, 2004Date of Patent: April 24, 2007Assignee: Broadcom CorporationInventors: Art Pharn, James Seymour, Jennifer Chiao