Patents Issued in April 26, 2007
  • Publication number: 20070090315
    Abstract: A valve has a valve piston, at least one coil and at least one magnetized component. An induction voltage is induced in the at least one coil, by a movement of the valve piston in the valve through a magnetic field produced by the magnetized component. A reference point is acquired, which is representative of a start of a current activation cycle of the valve. In the current activation cycle a point is determined as a function of a characteristic pattern of the induction voltage, which is representative of an end of a movement process of the valve piston in the valve. A current response time is determined as a function of the point and the reference point. At least one error condition is determined as a function of the response time. An error is identified, when the at least one error condition is satisfied.
    Type: Application
    Filed: October 20, 2006
    Publication date: April 26, 2007
    Inventor: Stephan Bolz
  • Publication number: 20070090316
    Abstract: A valve for adjusting the flow-rate of fluids, servo-controlled by an electric motor having within a hermetic enclosure capsule and supported rotatably with a support for reducing rotary friction, the rotor component of the electric motor with a screw-and-nut coupling with a flow control element restrained to perform only axial translational motions in a valve body provided with intake and discharge ports and fixed coaxially to the capsule. The support is provided by a radial bearing and associated with the rotor component in a position corresponding to the portion of the rotor component inside which the screw-and-nut coupling is provided.
    Type: Application
    Filed: September 25, 2006
    Publication date: April 26, 2007
    Inventors: Luigi Nalini, Andrea Dalan
  • Publication number: 20070090317
    Abstract: In order to obtain a solenoid valve device installed in a gas tank that is small in size and easy to attach to a gas tank, a valve body (8) including a flow passage (a) formed therein to communicate the inside and the outside of a gas tank (1) is inserted to the inside from the outside through a mouth hole (2) of the gas tank (1) and attached to the mouth hole (2). A valve seat (46) is provided in the flow passage (a), and a movable valve element (40) attached to or detached from the valve seat (46) is provided in the valve body (8). A solenoid unit (48) includes a movable core (50) engaged with the valve element (40) and a fixed core (64) facing the movable core (50) to attract the movable core (50) by the energization of a coil (74) and distract the movable core (50) by the non-energization of the coil (74). The solenoid unit (48) is arranged inside a storage hole (16) formed at an end part of the valve body (8) inside the gas tank (1).
    Type: Application
    Filed: November 2, 2004
    Publication date: April 26, 2007
    Inventors: Tadayoshi Kamiya, Soichi Shirai, Mikio Asai, Nobuyuki Shirai, Yoshiyuki Takeuchi, Toshihiko Shima, Hiroaki Suzuki
  • Publication number: 20070090318
    Abstract: A gas eliminating control valve assembly, system and method is disclosed. The valve system includes a valve casing coupled to a solenoid actuator assembly. The valve casing includes an inlet conduit, an outlet conduit and a fluid chamber communicating at least with one inlet conduit and one outlet conduit. The outlet conduit communicates with the fluid chamber at a position at least adjacent a portion of the fluid chamber to conduct gases, bubbles or separated gas out of the fluid chamber during operation of the valve open fluid flow, such that gas entrapment and bubble formation within the fluid chamber is reduced, avoided or eliminated.
    Type: Application
    Filed: August 4, 2006
    Publication date: April 26, 2007
    Inventor: Burton Hart
  • Publication number: 20070090319
    Abstract: A valve for selectively providing access to a supply of drinking fluid retained within a portable flexible container (18) comprises a tubular body (1) having at one end a stem (2) insertable into an opening in communication with the container and at its other end an outlet (3) through which fluid from the container can leave the valve. A piston (6) is mounted for sliding movement within a central bore (4) of the body and is resiliently urged into engagement with an annular seating (11) positioned at the bore end closest to the outlet (3). Means are provided for moving the piston (6) against the action of the resilient means (14) to enable fluid to be drawn from the container past the piston and through the outlet.
    Type: Application
    Filed: July 26, 2004
    Publication date: April 26, 2007
    Applicant: BW TECHNOLOGIES LTD.
    Inventor: Jon Grant
  • Publication number: 20070090320
    Abstract: A two-way damper is provided including a retaining member and a baffle. The baffle comprises a flexible member with a first portion secured and held in a fixed position by the retaining member and a second portion normally oriented in a first position, but free to move relative to said first position. The baffle also comprises a third portion, arranged between the first and second portions, being flexible and resilient and allowing the second portion to move to a second position relative to the first position upon the application of a pressure differential across the baffle above a threshold pressure and causing the second portion to return to the first position upon the application of a pressure differential across the baffle below the threshold pressure.
    Type: Application
    Filed: October 24, 2005
    Publication date: April 26, 2007
    Inventors: Ted Makowan, Timothy O'Shea
  • Publication number: 20070090321
    Abstract: A valve mechanism for use in an implant able infusion pump includes a fluid compartment and a dry-component compartment. The compartments are sealed so that fluid cannot pass between compartments. A flexible membrane is located between the compartments and allows limited mechanical displacement between the compartments, yet prevents any fluid communication therebetween. The fluid compartment includes a valve that is positioned between the inlet chamber and the outlet chamber. The valve includes a movable trigger member that selectively causes the valve to move between an open position and a closed position. The trigger member is positioned adjacent to the first surface of the membrane. The dry-component compartment includes an actuator, which is positioned against the membrane so that generated movement of the actuator may selectively transfer to the trigger member through non-invasive deformation of the flexible membrane.
    Type: Application
    Filed: October 26, 2005
    Publication date: April 26, 2007
    Inventor: Toralf Bork
  • Publication number: 20070090322
    Abstract: The present invention relates to a composition for fire-resisting and fire-extinguishing with pro-environmental characteristic. More composition comprising monobasic sodium phosphate, dibasic ammonium phosphate, borax, boric acid, olyoxyalkylated alkyl phosphoric acid ester and water.
    Type: Application
    Filed: November 24, 2004
    Publication date: April 26, 2007
    Inventor: Wook Yoon
  • Publication number: 20070090323
    Abstract: The invention relates to aqueous dispersions, comprising particles based on a magnetic iron oxide with dimensions of ?20 nm, the surface of which is modified by the grafting of aminated groups R with a covalent bonding to the surface of said particles, wherein the isoelectronic point of particles with such a modified surface is ?10. The invention further relates to a method for production of said aqueous suspensions and a method for modification of the surface of the particles present in said dispersions, in particular, by the immobilisation of polysaccharides such as dextrans, particularly for the formulation of magnetic compositions which may be administered in vivo and in particular for the formulation of injectable compositions of contrast agents for MRI.
    Type: Application
    Filed: May 13, 2004
    Publication date: April 26, 2007
    Inventors: Etienne Duguet, Stephane Mornet, Joseph Portier
  • Publication number: 20070090324
    Abstract: The present invention relates to an engine antifreeze coolant composition that is non-hazardous. More particularly, the invention is related to an anti-freeze coolant formed from a mixture of glycerine, an anti-oxidant, and a boron film former.
    Type: Application
    Filed: October 21, 2005
    Publication date: April 26, 2007
    Inventor: Virgil Flanigan
  • Publication number: 20070090325
    Abstract: An etching solution for silicon oxide may be used in a process for enlarging an opening formed through a silicon oxide layer. The etching solution includes about 0.2 to about 5.0 percent by weight of a hydrogen fluoride solution, about 0.05 to about 20.0 percent by weight of an ammonium fluoride solution, about 40.0 to about 70.0 percent by weight of an alkyl hydroxide solution and remaining water. The etching solution may etch the silicon oxide layer without damage to a metal silicide layer exposed by the opening.
    Type: Application
    Filed: October 16, 2006
    Publication date: April 26, 2007
    Inventors: Dong-Won Hwang, Hun-Jung Yi, Kwang-Shin Lim, Jung-Dae Park
  • Publication number: 20070090326
    Abstract: Cholesteric liquid crystal compositions are disclosed that produce high clarity cholesteric liquid crystal films. The cholesteric liquid crystal compositions are a reaction product of a cholesteric liquid crystal compound of formula (I) R—R1—R2—(R3R4)n—R5—R6 ??(I) as defined herein, and a thiol compound.
    Type: Application
    Filed: October 25, 2005
    Publication date: April 26, 2007
    Inventors: Feng Bai, Marc Radcliffe, Aaron Montello, Jianhui Xia, Domasius Nwabunma
  • Publication number: 20070090327
    Abstract: A novel red fluorescent powder of the following formula (I): AB(MO4)2??(I) wherein A is independently Li+, Na+, K+, Rb+, Cs+, or Ag+; B is Europium of trivalent rare-earth ion (Eu3+); and M is molybdenum (Mo) or tungsten(W). The red fluorescent powder prepared by a solid-state method is used in light emitted diodes (LED), particular in white light LEDs. It has strong absorption in the near-UV wavelength of 360 nm to 420 nm, improved luminescence intensity than commercially available, high color purity, luminescent efficiency, and excellent chemical stability.
    Type: Application
    Filed: June 15, 2006
    Publication date: April 26, 2007
    Inventors: I-Min Chan, Sheng-Bang Huang, Chuang-Bang Chiu, Teng-Ming Chen, Yuan-Cheng Chin
  • Publication number: 20070090328
    Abstract: The invention relates to an inorganic rare-earth iodide scintillation material of formula AXLn(y?y?,)Ln?y?I(x+3y) in which: A represents at least one element selected among Li, Na, K, Rb, Cs; Ln represents at least one first rare-earth element selected among La, Gd, Y, Lu, said first rare-earth element having a valency of 3+ in the aforementioned formula: Ln? represents at least one second rare-earth element selected among Ce, Tb, Pr, said second rare-earth element having a valency of 3+ in the aforementioned formula, x is an integer and represents 0, 1, 2 or 3; y is an integer or non-integer greater than 0 and less than 3, and; y? is an integer or non-integer greater than 0 and less than y. This material presents a high stopping power, a rapid decay time, in particular, less than 100 ns, a good energy resolution (in particular, less than 6% at 662 keV) and a high luminous level.
    Type: Application
    Filed: June 1, 2004
    Publication date: April 26, 2007
    Applicants: STICHTING VOOR DE TECHNISCHE WETENSCHAPPEN, UNIVERSITE DE BERNE
    Inventors: Pieter Dorenbos, Carel Van Eijk, Hans-Ulrich Gudel, Edgar Van Loef, Karl Kramer
  • Publication number: 20070090329
    Abstract: Conversion and passivation coatings and methods for treating metal surfaces such as steel and aluminum are disclosed. The coating compositions comprise a silane and a stabilizing agent. The methods herein comprise contacting the requisite metal surface with the coating composition.
    Type: Application
    Filed: September 29, 2006
    Publication date: April 26, 2007
    Inventors: Shiu-Chin (Cindy) Su, Kendall Guyer, Jeffrey Melzer, Christopher Carter, Matthew Hunter, Andrea Eodice, Donald Whisenhunt, Lingyun He, Bret Chrisholm
  • Publication number: 20070090330
    Abstract: An aqueous composition containing a single compound of a ferrosoferric salt as the active ingredient. The composition has many uses, including use as a rust preventative.
    Type: Application
    Filed: November 16, 2006
    Publication date: April 26, 2007
    Applicant: Institute for State Physics of Natural Materials
    Inventors: Shoji Yamashita, Mamoru Ando
  • Publication number: 20070090331
    Abstract: Disclosed herein are a near-infrared absorbing and color compensation film composition and a film using the film composition. The film composition comprises i) at least one colorant selected from the group consisting of an ionic compound of a near-infrared absorbing cyanine colorant cation having a maximum absorption wavelength in the range of 820 nm to 950 nm and a metal complex colorant anion, an ionic compound of a near-infrared absorbing diimmonium colorant cation having a maximum absorption wavelength in the range of 950 nm to 1,100 nm and a metal complex colorant anion, and an ionic compound of a selective visible light absorbing cyanine colorant cation having a maximum absorption wavelength in the range of 580 nm to 600 nm and a metal complex colorant anion, and ii) an adhesive; and a film using the film composition. When the film composition is used to produce an adhesive film or an antireflective composite film, the price of raw materials used and the number of production steps can be reduced.
    Type: Application
    Filed: May 22, 2006
    Publication date: April 26, 2007
    Inventors: Hwi Seo, Soo Lee
  • Publication number: 20070090332
    Abstract: The T-post puller is a device adapted for attachment to the a post hole digger boom of a tractor. The puller has a hollow body with a skirt at its bottom, which aids in positioning the main body over the T-post. A spring-biased, pivotally mounted wedge or ratchet plate extends along the interior length of the main body for engagement with any of the post's studs. The puller is further provided with a post release mechanism in the form of a rope attached to a lever connected to the wedge plate. The body has at least one yoke extending outwardly from the top end of the body for pivotal attachment to the boom. An adapter is attachable to the yoke in order to attached the puller to other power lifting booms or machines.
    Type: Application
    Filed: October 25, 2006
    Publication date: April 26, 2007
    Inventors: David Mensi, Johnny Mensi
  • Publication number: 20070090333
    Abstract: In an embodiment of the present invention a retention assembly for a jack includes a housing, a bushing, a shaft, a gear, a pin, and a spring. The housing includes a housing aperture, into which the bushing is positioned. The shaft, which includes a shaft aperture, extends through the bushing such that the portion of the shaft defining the shaft aperture is positioned within the housing. The gear, which includes a gear aperture, is positioned on the shaft such that the gear and shaft apertures align to accommodate the pin. The spring is positioned on the shaft and within the housing such that a first end of the spring applies a force to the bushing to retain the bushing in the housing aperture and a second end of the spring engages the pin to retain the pin within the shaft and gear apertures.
    Type: Application
    Filed: October 23, 2006
    Publication date: April 26, 2007
    Inventor: Frank Drake
  • Publication number: 20070090334
    Abstract: A decorative fence panel including opposite plastic walls that have opposite facing exterior surfaces. Each wall has a grid of traversing elongated channels formed by inward bending in the walls to define a decorative profile of a fence. A plurality of separate and discrete connections is disposed across the decorative fence panel. The connections are formed between the opposite walls by select intersections of the grids of traversing channels of the opposite walls. The connections form a plurality of continuous material nodes of thermal energy transfer paths between the opposite walls to transfer thermal energy between the opposite walls.
    Type: Application
    Filed: October 21, 2005
    Publication date: April 26, 2007
    Inventors: David Laws, R. Laws, Gregory Wilson, Phillip Swindler, Robert Magdars, John Johnson
  • Publication number: 20070090335
    Abstract: A foldable foam-based divider device includes a plurality of panels, each panel including a middle foam plate and front and back semi-rigid paper plates mounted on and sandwiching the middle foam plate, the middle foam plate further including at least one outwardly extending connecting tab and at least one tab-receiving recess with adjacent ones of the plurality of panels connected to one another in accordion-like fashion with the connecting tab extending into the tab-receiving recess and being secured therein by connection of the front and back semi-rigid paper plates to the connecting tab. The plurality of panels is movable between a closed position with the plurality of panels forming a folded stack of generally parallel panels and an opened position wherein the plurality of panels forms an extended wall operative to selectively divide an area.
    Type: Application
    Filed: October 24, 2005
    Publication date: April 26, 2007
    Inventor: Christian Legrand
  • Publication number: 20070090336
    Abstract: In a semiconductor memory comprising a matrix of memory cells each composed of one transistor and one chalcogenide layer as a memory element, no chalcogenide layer is disposed at a joint between an upper electrode wire connected to the chalcogenide layer and another wiring layer.
    Type: Application
    Filed: July 7, 2006
    Publication date: April 26, 2007
    Inventors: Isamu Asano, Tsuyoshi Kawagoe
  • Publication number: 20070090337
    Abstract: An infrared sensor IC and an infrared sensor, which are extremely small and are not easily affected by electromagnetic noise and thermal fluctuation, and a manufacturing method thereof are provided. A compound semiconductor that has a small device resistance and a large electron mobility is used for a sensor (2), and then, the compound semiconductor sensor (2) and an integrated circuit (3), which processes an electrical signal output by the compound semiconductor sensor (2) and performs an operation, are arranged in a single package using hybrid formation. In this manner, an infrared sensor IC that can be operated at room temperature can be provided by a microminiature and simple package that is not conventionally produced.
    Type: Application
    Filed: September 9, 2004
    Publication date: April 26, 2007
    Inventors: Koichiro Ueno, Naohiro Kuze, Yoshitaka Moriyasu, Kazuhiro Nagase
  • Publication number: 20070090338
    Abstract: A light-emitting device is capable of oscillating in a convex-whispering gallery mode. The lighting-emitting device includes a PIN-type semiconductor including a p-type distributed Bragg reflector, an active region and an n-type distributed Bragg reflector formed on a substrate by an epitaxial growth, wherein the PIN-type semiconductor having a hole with a predetermined diameter formed thereon, and an electrode connected to a region around the hole for applying a current to the hole. Further disclosed are a method for manufacturing the light-emitting device and an array of light-emitting devices.
    Type: Application
    Filed: October 17, 2005
    Publication date: April 26, 2007
    Applicants: POSTECH FOUNDATION, POSTECH ACADEMY-INDUSTRY FOUNDATION
    Inventors: O'Dae Kwon, Moojin Kim, Sung-Jae An, Seungeun Lee, Dongkwon Kim
  • Publication number: 20070090339
    Abstract: A nitride semiconductor light emitting device has high internal quantum efficiency but low operating voltage. The nitride semiconductor light emitting device includes an n-nitride semiconductor layer; an active layer of multi-quantum well structure formed on the n-nitride semiconductor layer, and having a plurality of quantum well layers and a plurality of quantum barrier layers; and a p-nitride semiconductor layer formed on the active layer. One of the quantum well layers adjacent to the n-nitride semiconductor layer has an energy band gap greater than that of another one of the quantum well layers adjacent to the p-nitride semiconductor layer.
    Type: Application
    Filed: October 23, 2006
    Publication date: April 26, 2007
    Inventors: Dong Lee, Sang Kang, Keun Song, Je Kim, Sang Hong
  • Publication number: 20070090340
    Abstract: An organic light emitting display and a method of fabricating the same are disclosed. The organic light emitting display may include a transistor on a substrate, a lower electrode on the substrate, the lower electrode being electrically connected to the transistor, an organic light emitting layer on the lower electrode, an upper electrode on the organic light emitting layer, and a buffer layer formed on the upper electrode to modify a predetermined thickness of the upper electrode to be a non-conductive material.
    Type: Application
    Filed: October 19, 2006
    Publication date: April 26, 2007
    Inventor: Kwan Lee
  • Publication number: 20070090341
    Abstract: A CaF2 buffer layer (3) is formed on a CaF2 (111) substrate (2) by an MBE method. Furthermore, a CuCl thin film is grown on the CaF2 buffer layer (3) by the MBE method while irradiating it with an electron beam to form an electro beam irradiation film (1a). Subsequently, a CuCl thin film is grown by the MBE method without the irradiation of electron beam to form an electron beam non-irradiation film (1b), thereby thus forming a CuCl thin film (a) including the electron beam irradiation film (1a) and the electron beam non-irradiation film (1b). Consequently, a CuCl thin film (1) exhibiting high planarity and crystallinity can be formed.
    Type: Application
    Filed: November 30, 2004
    Publication date: April 26, 2007
    Inventors: Tadashi Itoh, Masaaki Ashida
  • Publication number: 20070090342
    Abstract: A layered article of manufacture and a method of manufacturing same is disclosed. A substrate has a biaxially textured MgO crystalline layer having the c-axes thereof inclined with respect to the plane of the substrate deposited thereon. A layer of one or more of YSZ or Y2O3 and then a layer of CeO2 is deposited on the MgO. A crystalline superconductor layer with the c-axes thereof normal to the plane of the substrate is deposited on the CeO2 layer. Deposition of the MgO layer on the substrate is by the inclined substrate deposition method developed at Argonne National Laboratory. Preferably, the MgO has the c-axes thereof inclined with respect to the normal to the substrate in the range of from about 10° to about 40° and YBCO superconductors are used.
    Type: Application
    Filed: January 11, 2006
    Publication date: April 26, 2007
    Applicant: The University of Chicago
    Inventors: Uthamalingam Balachandran, Beihai Ma, Dean Miller
  • Publication number: 20070090343
    Abstract: A system and method are disclosed for processing an organic memory cell. An exemplary system can employ an enclosed processing chamber, a passive layer formation component operative to form a passive layer on a first electrode, and an organic semiconductor layer formation component operative to form an organic semiconductor layer on the passive layer. A wafer substrate is not needed to transfer from a passive layer formation system to an organic semiconductor layer formation system. The passive layer is not exposed to air after formation of the passive layer and before formation of the organic semiconductor layer. As a result, conductive impurities caused by the exposure to air do not occur in the thin film layer, thus improving productivity, quality, and reliability of organic memory devices. The system can further employ a second electrode formation component operative to form a second electrode on the organic semiconductor layer.
    Type: Application
    Filed: October 21, 2005
    Publication date: April 26, 2007
    Applicants: SPANSION LLC, Advanced Micro Devices, Inc.
    Inventors: Nicolay Yudanov, Igor Sokolik, Richard Kingsborough, William Leonard, Suzette Pangrle, Nicholas Tripsas, Minh Ngo
  • Publication number: 20070090344
    Abstract: In accordance with the present invention, a molecular device is provided that can act as a finite state machine, such as a logic device or a memory device. The molecular device includes operating molecules having two or more rotors. Each rotor has an electric dipole moment and multiple discrete rotor configurational states. A rotor can be any suitable and effective group that has an electric dipole moment and multiple discrete rotor configurational states. An individual rotor configurational state can be substantially or completely independent of the rotor configurational states of other rotors. The rotor configurational states can be binary. The molecular configurational state of a multi-stable molecule of a device can be ascertained by measuring conductance.
    Type: Application
    Filed: October 24, 2005
    Publication date: April 26, 2007
    Inventors: R. Williams, Philip Kuekes, Alexandre Bratkovski
  • Publication number: 20070090345
    Abstract: An organic light emitting diode (OLED) display panel is provided. The OLED display panel includes a substrate, a conductive layer, an active matrix pixel array and several thin film transistors (TFTs). The conductive layer having several openings is disposed above the substrate. The active matrix pixel array having several pixels is disposed above the conductive layer. Each pixel has a display region and a non-display region. The display regions correspond to the openings. The TFTs are correspondingly disposed inside the pixels and correspondingly positioned inside the non-display regions. Each TFT includes a channel layer, a source, a drain and a gate. The channel layer is disposed above the conductive layer. The source and the drain are disposed above channel layer and respectively contact with the two opposite sides of the channel layer. The gate is disposed above the channel layer and positioned between the source and the drain.
    Type: Application
    Filed: December 2, 2005
    Publication date: April 26, 2007
    Inventors: Yuan-Chun Wu, Chi-Wen Chen
  • Publication number: 20070090346
    Abstract: A porous chalcogenide thin film having a microporous structure, a method for preparing the chalcogenide thin film and an electronic device employing the chalcogenide thin film, are provided. The porous chalcogenide thin film has superior crystallinity and can be applied as a semiconductor layer having superior electrical properties to the fabrication of devices by inserting functional metal or semiconductor nanoparticles into nanopores of the thin film.
    Type: Application
    Filed: May 23, 2006
    Publication date: April 26, 2007
    Inventors: Hyun Jeong, Jong Seon, Hyeon Shin, Sang Hyun
  • Publication number: 20070090347
    Abstract: A data driver and a method of driving the same. The data driver includes a shift register for generating sampling signals; sampling latches for sampling digital data applied to output channels, respectively, in accordance with the sampling signals; holding latch units for receiving the sampled digital data of the channels from the sampling latches to hold the digital data for a first period; first digital-to-analog converters for receiving the held digital data of the channels from the holding latch units to generate currents corresponding to the digital data; a second digital-to-analog converter commonly connected to the channels and the first digital-to-analog converters to receive the digital data provided from the holding latch units for a second period and to generate correction currents for the data currents; and output stages for sampling, correcting, and driving final currents using the data currents and the correction currents.
    Type: Application
    Filed: July 21, 2006
    Publication date: April 26, 2007
    Inventors: Yong Park, Oh Kwon, Han Bae, Joon Bae, Byong Choi
  • Publication number: 20070090348
    Abstract: The electronic properties of molecular junctions of the general type carbon/molecule/TiO2/Au as examples of “molecular heterojunctions” consisting of a molecular monolayer and a semiconducting oxide. Junctions containing fluorene bonded to pyrolyzed photoresist film (PPF) were compared to those containing Al2O3 instead of fluorene, and those with only the TiO2 layer. The responses to voltage sweep and pulse stimulation were strongly dependent on junction composition and temperature. A transient current response lasting a few milliseconds results from injection and trapping of electrons in the TiO2 layer, and occurred in all three junction types studied. Conduction in PPF/TiO2/Au junctions is consistent with space charge limited conduction at low voltage, then a sharp increase in current once the space charge fills all the traps. With fluorene present, there is a slower, persistent change in junction conductance which may be removed by a reverse polarity pulse.
    Type: Application
    Filed: September 28, 2006
    Publication date: April 26, 2007
    Applicants: The Ohio State University Research Foundation, ZettaCore, Inc.
    Inventors: Richard McCreery, Kenneth Mobley, Jing Wu
  • Publication number: 20070090349
    Abstract: An organic thin film transistor that can reduce contact resistance between source and drain electrodes and an organic semiconductor layer and can be readily manufactured, a flat panel display apparatus utilizing the organic thin film transistor, and a method of manufacturing the organic thin film transistor. The organic thin film transistor includes: a substrate; a source electrode and a drain electrode disposed on the gate insulating film; a conductive polymer layer disposed to cover at least a portion of each of source and drain electrodes; a hydrophobic material layer disposed on the substrate and the source and drain electrodes except regions where the conductive polymer layer are formed; an organic semiconductor layer electrically connected to the source and drain electrodes; a gate insulating film disposed to cover the organic semiconductor layer; and a gate electrode disposed on the gate insulating film.
    Type: Application
    Filed: October 12, 2006
    Publication date: April 26, 2007
    Applicant: Samsung SDI Co, Ltd.
    Inventors: Min-Chul Suh, Taek Ahn, Jin-Seong Park
  • Publication number: 20070090350
    Abstract: The present invention discloses a display device having a substrate, an organic material layer arranged on the substrate, a pixel electrode arranged on one surface of the organic material layer, a common electrode arranged on another surface of the organic material layer, and a light penetration layer through which light emitted from the organic material layer passes. The light penetration layer includes a curved pattern formed on at least one surface to refract light in a perpendicular direction to the substrate as it passes through the light penetration layer.
    Type: Application
    Filed: October 23, 2006
    Publication date: April 26, 2007
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sang-Pil LEE, Hoon KIM, Un-Cheol SUNG
  • Publication number: 20070090351
    Abstract: An organic thin film transistor that can control the threshold voltage and reduce leakage current includes: a gate electrode; an organic semiconductor layer insulated from the gate electrode; a source electrode and a drain electrode insulated from the gate electrode and electrically connected to the organic semiconductor layer; a gate insulating layer interposed between the gate electrode and the organic semiconductor layer; and a hole control layer that is interposed between the gate insulating layer and the organic semiconductor layer. The hole control layer includes a compound having a hole-donor group or a compound having a hole-acceptor group.
    Type: Application
    Filed: October 17, 2006
    Publication date: April 26, 2007
    Applicant: Samsung SDI Co., Ltd.
    Inventors: Jin-Seong Park, Min-Chul Suh, Taek Ahn
  • Publication number: 20070090352
    Abstract: A thin film transistor includes: a gate electrode; source and drain electrodes insulated from the gate electrode; an organic semiconductor layer that is insulated from the gate electrode and is electrically connected to the source and drain electrodes; an insulating layer that insulates the gate electrode from the source and drain electrodes or the organic semiconductor layer; and an ohmic contact layer that is interposed between the source/drain electrodes and the organic semiconductor and contains a compound having a hole transporting unit. By providing the ohmic contact layer, the ohmic contact between source/drain electrodes and the organic semiconductor layer can be effectively achieved and the adhesive force between the source/drain electrodes and the organic semiconductor layer is increased. In addition, a flat panel display having improved reliability can be obtained using the thin film transistor.
    Type: Application
    Filed: October 18, 2006
    Publication date: April 26, 2007
    Applicant: Samsung SDI Co., Ltd.
    Inventors: Taek Ahn, Min-Chul Suh, Jin-Seong Park, Seok-Jong Lee, Jung-Han Shin
  • Publication number: 20070090353
    Abstract: The present invention provides an indene derivatives having a new structure and an organic light-emitting diode using the same. The organic light-emitting diode according to the present invention shows improved effects in efficiency, driving voltage and stability.
    Type: Application
    Filed: October 19, 2006
    Publication date: April 26, 2007
    Inventors: Dae Lee, Jae Bae, Dong Lee, Kong Kim
  • Publication number: 20070090354
    Abstract: Memory elements including a first electrode and a second electrode. A chalcogenide material layer is between the first and second electrodes and a tin-chalcogenide layer is between the chalcogenide material layer and the second electrode. A selenide layer is between the tin-chalcogenide layer and the chalcogenide material layer. Optionally, a metal layer, for example a silver layer, is between the tin-chalcogenide layer and the second electrode. Methods for forming the memory elements are also provided.
    Type: Application
    Filed: August 11, 2005
    Publication date: April 26, 2007
    Inventor: Kristy Campbell
  • Publication number: 20070090355
    Abstract: A single separable electrode that includes a plurality of separable electrically connected electrode sections.
    Type: Application
    Filed: October 17, 2006
    Publication date: April 26, 2007
    Applicant: KONINKLIJKE PHILIPS ELECTRONICS, N.V.
    Inventors: Thomas Solosko, Gregory Brink, Joel Rosenweig, Fred Borgenicht
  • Publication number: 20070090356
    Abstract: A semiconductor device includes a semiconductor substrate having electrodes, a resin layer provided on the surface of the semiconductor substrate on which the electrodes are formed and having concave portions formed on a second surface on the other side of a first surface facing the semiconductor substrate, test pads electrically connected to the electrode and formed inside the concave portion, wirings electrically connected to the test pad, going through on the second surface of the resin layer, and narrower in width than the test pad, and lands electrically connected to any one of the test pads and having an external terminal formed thereon.
    Type: Application
    Filed: October 19, 2006
    Publication date: April 26, 2007
    Applicant: Seiko Epson Corporation
    Inventor: Terunao HANAOKA
  • Publication number: 20070090357
    Abstract: A pixel structure including a scan line, a gate pattern, a first dielectric layer, a channel layer, a source, a drain, a data line, a second dielectric layer and a pixel electrode is provided. The gate pattern is electrically connected with the scan line and has an opening therein. The first dielectric layer covers the scan line and the gate pattern and it fills up the opening. Besides, the channel layer is disposed on the first dielectric layer, and the source and the drain are disposed on the channel layer. The drain is disposed above the opening of the gate pattern. The source is electrically connected with the data line, and the pixel electrode is electrically connected with the drain. The overlapping area between the gate pattern that has an opening and the drain can be kept so that the gate-drain capacitor (Cgd) is not changed.
    Type: Application
    Filed: December 8, 2005
    Publication date: April 26, 2007
    Inventors: Yuan-Hsin Tsou, Chien-Kuo He
  • Publication number: 20070090358
    Abstract: Especially in case that a light-emitting element composed of layers containing organic compounds or inorganic compounds is driven by a thin film transistor (TFT), a structure having at least two transistors installed with a drive TFT is required to prevent irregularities of ON current of a switching TFT provided to a pixel region. Hence, the simplification of a semiconductor element structure and a process for manufacturing a semiconductor element becomes an urgent task as a large substrate is frequently used. According to the present invention, after that a source region and a drain region are formed, an insulating film serving as a channel protective film is formed to cover a portion for serving as a channel region, then, an island-like semiconductor film is formed. Accordingly, a semiconductor element can be manufactured by using only a metallic mask without forming a resist mask, and so the process can be simplified.
    Type: Application
    Filed: November 5, 2004
    Publication date: April 26, 2007
    Applicant: Semiconductor Energy laboratory Co., Ltd.
    Inventors: Yohei Kanno, Gen Fujii
  • Publication number: 20070090359
    Abstract: An organic light-emitting diode comprising a substrate having a first opposing surface and a second opposing surface; a first electrode layer overlying the first opposing surface; a light-emitting element overlying the first electrode layer, the light-emitting element comprising a hole-transport layer and an emissive/electron-transport layer, wherein the hole-transport layer and the emissive/electron-transport layer lie directly on one another, and the hole-transport layer comprises a cured polysiloxane prepared by applying an organosilicon composition to form a film and exposing the film to moisture to form the cured polysiloxane, wherein the organosilicon composition comprises at least one silane having a group selected from carbazolyl, fluoroalkyl, and pentafluorophenylalkyl; and a second electrode layer overlying the light-emitting element.
    Type: Application
    Filed: January 18, 2005
    Publication date: April 26, 2007
    Inventors: Paul Schalk, Shihe Xu
  • Publication number: 20070090360
    Abstract: Blanket implant diode which can be used for transient voltage suppression having a P+ substrate implanted with an N-type dopant blanket implant near a top surface of the substrate, creating a P? region. An oxide mask is layered adjacent to and above the P? region. The oxide mask is partially etched away from a portion of the P? region, creating an etched region. An N-type main function implant is implanted into the etched region, creating an N+ region above the P+ substrate and adjacent the P? region. And, a metal is layered above the oxide mask in the etched region to form an electrode. Terminations may be attached electrically to both sides of the P-N junction. Methods of making and using the present invention and methods for transient voltage suppression are also provided.
    Type: Application
    Filed: May 2, 2006
    Publication date: April 26, 2007
    Applicant: Vishay General SemiConductors, LLC
    Inventors: Sheng-Huei Dai, Ya-Chin King, Chun-Jen Huang, L.C. Kao
  • Publication number: 20070090361
    Abstract: The present invention relates to a thin film transistor substrate and a liquid crystal display panel for use in a liquid crystal display apparatus, and aims to provide a thin film transistor substrate and a liquid crystal display panel with good display quality. The thin film transistor substrate has a first sub-pixel electrode 16 and second sub-pixel electrode 17 arranged on the opposite sides of the gate bus line 12, a first thin film transistor 20a that establishes direct electrical connection with the first sub-pixel electrode 16, and a second thin film transistor 20b capacitively coupled to the second sub-pixel electrode 17. Since capacitance is formed where conventionally a source electrode and pixel electrode are connected via a contact hole, excessively opaque wiring is not required, which ensures sufficient effective area and transmittance of a pixel.
    Type: Application
    Filed: May 15, 2006
    Publication date: April 26, 2007
    Applicant: Sharp Kabushiki Kaisha
    Inventor: Atsuyuki Hoshino
  • Publication number: 20070090362
    Abstract: A thin film transistor includes: a gate electrode; source and drain electrodes insulated from the gate electrode; an organic semiconductor layer that is insulated from the gate electrode and electrically connected to the source and drain electrodes; an insulating layer that insulates the gate electrode from the source and drain electrodes or the organic semiconductor layer; a hydrophobic layer which covers the source and drain electrodes or insulating layer and has an opening that defines a region corresponding to the organic semiconductor layer; and a hydrophilic layer formed in the opening of the hydrophobic layer, wherein the organic semiconductor layer is formed on the hydrophilic layer. The thin film transistor includes the organic semiconductor layer having a highly precise pattern that is formed without an additional patterning process.
    Type: Application
    Filed: October 19, 2006
    Publication date: April 26, 2007
    Applicant: Samsung SDI Co., Ltd.
    Inventors: Taek Ahn, Min-Chul Suh, Jin-Seong Park
  • Publication number: 20070090363
    Abstract: DRAM memory cells having a feature size of less than about 4F2 include vertical surround gate transistors that are configured to reduce any short channel effect on the reduced size memory cells. In addition, the memory cells may advantageously include reduced resistance word line contacts and reduced resistance bit line contacts, which may increase a speed of the memory device due to the reduced resistance of the word line and bit line contacts.
    Type: Application
    Filed: July 25, 2005
    Publication date: April 26, 2007
    Inventor: Todd Abbott
  • Publication number: 20070090364
    Abstract: The present invention discloses a method of manufacturing an image TFT array and a structure thereof. A substrate is provided. At least one first line, a lower electrode, a pad electrode, a common electrode and a first electrode connected with the first line are defined simultaneously by etching a first conductive layer. At least one second line intersecting the first line, an upper electrode corresponding to the lower electrode, a second electrode connected with the second line and a third electrode connected with the upper electrode are defined simultaneously by etching a second conductive layer applied to cover the substrate and above the first conductive layer.
    Type: Application
    Filed: October 20, 2005
    Publication date: April 26, 2007
    Inventor: Chih-Chieh Lan