Abstract: A semiconductor device (10) includes a heat source (12), a heat-dissipating component (13) for dissipating heat generated by the heat source, and a thermal interface material (14) filled in a space formed between the heat source and the heat-dissipating component. The thermal interface material includes a mixture of first copper powders having an average particle size of 2 um and second copper powders having an average particle size of 5 um, a silicone oil having a viscosity from 50 to 50,000 cs at 25° C., and at least one oxide powder selected from the group consisting of zinc oxide and alumina powders. The mixture of copper powders is 50% to 90% in weight, the silicone oil is 5% to 15% in weight and the at least one oxide powder is 0% to 35% in weight of the thermal interface material.

Abstract: The invention concerns a process for producing transparent multi-layer electrodes from conductive polymers, electrodes produced by this process and their use in electro-optical structures.

Abstract: A method of making a dispersion of reduced graphite oxide nanoplatelets involves providing a dispersion of graphite oxide nanoplatelets and reducing the graphite oxide nanoplatelets in the dispersion in the presence of a reducing agent and a polymer. The reduced graphite oxide nanoplatelets are reduced to an extent to provide a higher C/O ratio than graphite oxide. A stable dispersion having polymer-treated reduced graphite oxide nanoplatelets dispersed in a dispersing medium, such as water or organic liquid is provided. The polymer-treated, reduced graphite oxide nanoplatelets can be distributed in a polymer matrix to provide a composite material.

Abstract: A halogen-free fire retardant coating composition comprising film forming polymer, inorganic fire retardant material characterised in that the fire retardant material comprises a combination of fire retardant filler particles and a metal stannate and/or a metal hydroxy stannate wherein the overall PVC of the composition is from 75 to 97%.

Abstract: A protective mesh, especially for rockfall protection or to stabilise a layer of soil, is braided out of helically curved wires (11, 12, 13, 14, 15, 16). Rhomboidal meshes (17) are formed and in each case two adjacent helical wires (11, 12, 13, 14, 15, 16) are flexibly held together. The protective mesh (10) has a thickness which amounts to a multiple of the thickness of the wire. In at least some of the braided pairs of wires (11, 12, 13, 14, 15, 16), an essentially straight longitudinal reinforcement element (31, 32, 33, 34, 35) is guided through the coupling area (A) of the two helical wires, causing the rhomboidal meshes (17) to be divided into triangular meshes (17a, 17b). In these crucial areas of force transmission of the protective mesh, there are now three instead of two wires meeting, as the result of which the force absorption capacity of the protective mesh is substantially increased.

Abstract: An impact head for a guardrail includes cable routing means adapted to form a convoluted path through which a cable can be threaded. The convoluted path that the cables must follow through the impact head of the invention restricts movement of the cable through the head, thereby providing sufficient friction to slow down the movement of the impact head during a vehicle impact.

Abstract: A picket fence assembly is provided which includes uniquely configured pickets which facilitate fast and easy construction of a picket fence without the need for additional mechanical fasteners. In one embodiment, the picket fence includes non-circular pickets, a first horizontal member and a second horizontal member. The first and second horizontal members include openings configured to receive respective pickets. Each picket includes at least one notch positioned to align with a respective opening in one of the first and second horizontal members. The notch facilitates rotation of the picket in relation to the one horizontal member to axially secure the vertical picket to the one horizontal member. The opening in the other horizontal member is oriented to non-rotatably receive the picket member after it has been secured to the one horizontal member. A method of assembling a picket fence assembly is also disclosed.

Abstract: A bracket assembly for securing a rail to a post. The bracket assembly includes a bracket that is secured to the post and a spring-biased cover plate. The cover plate includes a perimeter wall that includes a slot which extends from its front edge through to its back edge. A portion of the perimeter wall terminates adjacent either side of the slot. These portions of the perimeter are movable relative to each other. The bracket includes a back wall with a peripheral outer wall extending upwardly and outwardly away therefrom. The peripheral wall defines a rail receiving receptacle into which an end of a rail is placed. The rail is preferably secured in position by a plurality of fasteners inserted through the rail and into the housing. Once the end of the rail is retained in the bracket, the terminal portions of the perimeter wall are arcuately separated from each other and the cover plate is snap-fitted over the peripheral outer wall of the bracket.

Abstract: The present invention relates to a method of installing a safety gate system whereby builders install in new construction multiple adapter features capable of attachment to specialized units that allow a user to create a gate across a passageway without the use of tools or hardware. The present invention also teaches a safety gate system for practicing said method.

Abstract: A memory device comprising a first electrode having a top side, a second electrode having a top side and an insulating member between the first electrode and the second electrode. The insulating member has a thickness between the first and second electrodes near the top side of the first electrode and the top side of the second electrode extends outwardly from the top sides of the first and second electrodes defining a wall of insulating material having top side. A bridge of memory material crosses the insulating member over the top of the wall, and defines an inter-electrode path between the first and second electrodes across the insulating member. An array of such memory cells is provided. The bridge comprises an active layer of memory material on the top side of the wall, having at least two solid phases and a layer of thermal insulating material overlying the memory material having thermal conductivity less than a thermal conductivity of the first and second electrodes.

Abstract: At least one or more dark current reducing layers having a quantum well structure are provided at an end portion in a stacking direction of an infrared detecting section in which quantum dot layers are stacked.

Abstract: Disclosed is a nanowire light sensor using a phenomenon that, resistance of the nanowire is reduced by light with speific wavelength. In addition, provided is a rapid test kit for immunoassay using the nanowire light sensor and an immunoassay principle using chemifluorescence and chemiluminescence. In addition, provided are a nanowire protein chip and a gene chip using the nanowire light sensor in a micro array form as a method for detecting chemifluorescence and chemiluminescence.

Abstract: An organic light-emitting diode comprising a substrate having a first opposing surface and a second opposing surface; a first electrode layer overlying the first opposing surface; a lightemitting element overlying the first electrode layer, the light-emitting element comprising a hole-transport layer and an emissive/electron-transport layer, wherein the hole-transport layer and the emissive/electron-transport layer lie directly on one another, and the hole-transport layer comprises a cured polysiloxane prepared by applying a silicone composition to form a film and curing the film, wherein the silicone composition comprises a polysiloxane having a group selected from carbazolyl, fluoroalkyl, and pentafluorophenylalkyl; and a second electrode layer overlying the light-emitting element.

Abstract: An organic thin film transistor in which source and drain electrodes have a double layer structure to aid patterning of an organic semiconductor layer using a laser beam, and a flat display device having the organic thin film transistor. The organic thin film transistor includes: a gate electrode; a source electrode and a drain electrode insulated from the gate electrode; an organic semiconductor layer insulated from the gate electrode and having a portion patterned to electrically connect to the source and drain electrodes; and a protection layer formed on the source and drain electrodes.

Abstract: An OTFT is formed by forming a pair of recesses, one being a groove and another being groove or a hole. A source electrode is formed by filling one of the recesses. A drain electrode is formed by filling the other one of the recesses. A film of organic semiconductor material is formed on the source electrode and the drain electrode and makes electrical contact therewith. A gate insulating film is formed on the film of organic material, and a gate electrode is formed on the gate insulating film. The method of manufacturing the OTFT allows realization of high precision microfabrication of the source electrode and the drain electrode formed on the substrate such as a plastic substrate by an inexpensive process.

Abstract: An organic light-emitting display device includes: a light-emitting element located between a first substrate and a second substrate, and adapted to emit light; a phase difference plate disposed on the first substrate or the second substrate in a path through which the light emitted from the light-emitting element is propagated, the phase difference plate being adapted to change a phase of an incident light; a wire grid polarizer disposed on the phase difference plate, and adapted to reflect a light having a specific polarization direction and to transmit a light having a polarization direction opposite to the specific polarization direction; and a dye-based polarizer disposed on the wire grid polarizer, and adapted to transmit the light having the polarization direction opposite to the specific polarization direction and to absorb the light having the specific polarization direction.

Abstract: The present invention relates to a novel imidazoquinazoline derivative, a process for preparing the same, and an organic electronic device using the same. The imidazoquinazoline derivative according to the present invention serves as hole injecting, hole transporting, electron injecting, electron transporting, or a light emitting material in an organic electronic device including an organic light emitting device, and the device according to the present invention exhibits excellent characteristics in efficiency, operating voltage, and stability.

Abstract: The following steps are carried out: forming a gate electrode on a semiconductor substrate with a gate insulating film interposed therebetween, forming a dummy gate electrode on the semiconductor substrate with a dummy gate insulating film interposed therebeweeen and forming another dummy gate electrode on the semiconductor substrate with an insulating film for isolation interposed therebetween; forming a metal film on the semiconductor while exposing the gate electrode and covering the dummy gate electrodes; and subjecting the semiconductor substrate to heat treatment and thus siliciding at least an upper part of the gate electrode. Since the gate electrode is silicided and the dummy gate electrodes are non-silicided, this restrains a short circuit from being caused between the gate electrode and adjacent one of the dummy gate electrodes.

Abstract: There is a room for improvement in conventional semiconductor devices in terms of reducing the chip area. A semiconductor device 1 comprises an evaluation transistor 10 (first characteristic evaluation device), an evaluation transistor (second characteristic evaluation device), measurement pads 30 (first measurement pads) and measurement pads 40 (second measurement pads). The measurement pad 30 and the measurement pad 40 are provided in different layers in the interconnect layer.

Abstract: A static electricity preventing assembly for an electronic device, may include a substrate, a buffer layer on the substrate, the buffer layer including a plurality of contact holes exposing respective regions of the substrate, a shorting bar on the buffer layer, pad electrodes on the buffer layer, metal wiring lines on the buffer layer, wherein a first portion of each of the metal wiring lines may be electrically connected to the substrate through the contact holes, a second portion of each of the metal wiring lines may be connected to a respective one of the pad electrodes, and a third portion of each of the metal wiring lines may be connected to the shorting bar, wherein the first portion may be between the second portion and the third portion.

Abstract: A polycrystalline silicon layer, a flat panel display using the polycrystalline silicon layer, and methods of fabricating the same are provided. An amorphous silicon layer is formed on a substrate. A first pattern layer, a second pattern layer, and a metal catalyst layer are formed on the amorphous silicon layer. The first pattern layer and the second pattern layer are formed to define a region of at least 400 ?m2 within which a metal catalyst of the metal catalyst layer is diffused into the amorphous silicon layer. A seed region is crystallized by the diffused metal catalyst. After a crystallization region is grown from the seed region, a semiconductor layer is formed on the crystallization region, so as to fabricate a thin film transistor with excellent characteristics. Using this, a flat panel display is fabricated.

Abstract: A polycrystalline silicon layer, a flat panel display using the polycrystalline silicon layer, and a method of fabricating the same are provided. The polycrystalline silicon layer is formed by crystallizing a seed region of an amorphous silicon layer using a super grain silicon (SGS) crystallization technique. The crystallinity of the seed region spread into a crystallization region beyond the seed region. The crystallization region is formed into a semiconductor layer that can be incorporated to make a thin film transistor to drive flat panel displays. The semiconductor layer made by the method of the present invention provides uniform growth of grain boundaries, and characteristics of a thin film transistor made of the semiconductor layer are improved.

Abstract: A capacitor comprises: a lower electrode formed of a foil made of a polycrystalline metal; an upper conductor layer; and a dielectric layer disposed between the lower electrode and the upper electrode layer. Grain boundaries of the polycrystalline metal appear at the top surface of the lower electrode. The capacitor further comprises an insulator that is disposed between the top surface of the dielectric layer and the bottom surface of the upper electrode layer and that is present only in part of a region in which the top surface of the dielectric layer and the bottom surface of the upper electrode layer face each other. The insulator is disposed to cover at least part of the grain boundaries appearing at the top surface of the lower electrode when seen from above the top surface of the dielectric layer. The insulator is formed by electrophoresis.

Abstract: A liquid crystal display panel and a fabricating method thereof comprising an image sensing capability, image scanning, and touch inputting. In the liquid crystal display device, a gate line and a data line are formed to intersect each other on a substrate to define a pixel area in which a pixel electrode is positioned. A first thin film transistor is positioned at an intersection area of the gate line and the data line. A sensor thin film transistor senses light having image information and supplied with a first driving voltage from the data line. A driving voltage supply line is positioned in parallel to the gate line to supply a second driving voltage to the sensor thin film transistor.

Abstract: According to an embodiment of the present invention, a display device includes a substrate, at least one nano-emitting body disposed on the substrate where each nano-emitting body includes at least one shell and has a coaxial structure, at least one light source disposed on at least one of a lower and an upper part of the substrate to provide the at least one nano-emitting body with light, and at least one switching element disposed on the substrate and configured to turn the at least one light source on and off.

Abstract: A first type of merged power MESFET device includes two monolithically integrated MESFETS. The MESFETS share common sources and gates, and are sized so that one MESFET may be used as a power device while the other is used as a current-sense device. A second type of merged power MESFET device includes two monolithically integrated MESFETS. The MESFETS share a common region which serves as the source for one MESFET and the drain for the second MESFET. This allows the two MESFETS to function as the high and low-side switches for a buck or boost regulator. A third type of merged power MESFET device combines the high and low-side switches with a current-sensing device.

Abstract: A semiconductor lamination portion (9) including an active layer (4) is formed on a substrate (1). The semiconductor lamination portion is made of, for example, a nitride material having a cleavage plane not parallel to a cleavage plane of the substrate (1) and has a resonance cavity end faces (6) from which a laser beam is emitted. And a metal layer portion (5) is provided between the substrate and the active layer in a vicinity of the resonance cavity end faces. As a result, even if a crack is caused between the substrate and the semiconductor lamination portion, an extension of the crack stops at the metal layer portion, thereby the crack does not reach to the active layer at the resonance cavity end faces, and the cleavage plane free from any crack can be obtained at the resonance cavity end faces. Therefore, as an absorption loss at the resonance cavity end faces is reduced, the semiconductor laser which is driven with low operating current and has high reliability can be obtained.

Abstract: A color-mixing LED is disclosed. Fluorescent powders are mixed with an adhesive to form a thin plate. A segmentation process is then performed on the thin plate. A chip is coupled to a concave bracing frame, and then the segmented thin plate is mounted in the concave bracing frame against its inner walls. A transparent adhesive for fixing is injected into the concave bracing frame, whereby the color-mixing LED has simplified manufacturing procedure, reduced manufacturing cost, and easy assembling design.

Abstract: A light emitting device includes a lower semiconductor layer of a first conductivity type; an optical emission layer formed on said lower semiconductor layer; an upper semiconductor layer of a second conductivity type opposite to said first conductivity type, said upper semiconductor layer being formed on said optical emission layer; a lower side electrode electrically connected to said lower semiconductor layer; and an upper side electrode electrically connected to said upper semiconductor layer, wherein said upper side electrode is formed on said upper semiconductor layer, and said upper semiconductor layer has a mesh pattern defining a plurality of sections each surrounded by said upper side electrode, and wherein at least one dent is disposed in at least one of said sections, said dent having a bottom reaching at least an upper surface of said lower semiconductor layer and having an opening with an upper edge spaced apart from said upper side electrode.

Abstract: An alternating current (AC) light emitting assembly and an AC light emitting device are disclosed. The AC light emitting assembly includes a substrate; a rectifier unit comprising a plurality of rectifier components arranged in a Wheatstone Bridge, for rectifying an AC signal into a direct current (DC) signal, each of the rectifier components having a high breakdown voltage and a low forward voltage; a light emitting unit electrically connected to the rectifier unit and comprising a plurality of light emitting components formed on the substrate, for emitting light when receiving the DC signal outputted by the rectifier unit; and two conductive electrodes electrically connected to the rectifier unit for receiving and transmitting the AC signal to the rectifier unit. The AC light emitting device includes two stacked and electrically connected AC light emitting assemblies.

Abstract: An active matrix electroluminescence display device and a method for fabricating the same, whereby damage caused by UV light rays during the fabrication process can be prevented, are disclosed. The active matrix electroluminescence display device includes a plurality of transistors formed on a substrate having an emissive area and a non-emissive area defined thereon, an insulating layer formed on the substrate and the thin film transistors, a metallic protective layer formed on the insulating layer of the non-emissive area, a first electrode formed on the insulating layer of the emissive area, an electroluminous layer formed on the first electrode, and a second electrode formed on the electroluminous layer.

Abstract: A dual display unit comprising two OLED displays separately fabricated on two substrates. Each of the substrates has a peripheral area surrounding the respective display. A getter element is provided on one or both peripheral areas, substantially surrounding both the displays, for absorbing harmful gaseous elements in the display unit. A sealing material is applied along the edges of the two substrates enclosing the getter element so as to form a hermetic seal to the OLED displays. One or more further getter layers can be disposed between the first and second displays. The sealing material has a thickness sufficient to leave an air gap between the first display and the second display.

Abstract: This invention discloses a light-emitting semiconductor device with open-bypass function, which comprises two terminals providing a current, at least one LED unit and a bypass switch. Electrodes of the LED unit and the bypass switch are properly connected to the terminals, so that the bypass switch will provide an alternative path for current flowing through if the circuit of the LEDs unit between two terminals is open.

Abstract: One embodiment relates to an optical navigation device. The device includes a lead frame having reference features, a laser, a detector array, and an optical component having alignment features. The laser is attached to the lead frame and positioned in reference to the reference features of the lead frame. The detector array is attached to the lead frame and positioned in reference to the reference features of the lead frame. The optical component is coupled to the lead frame so that its alignment features register to the reference features of the lead frame. In this way, the molded optical component is passively aligned to the laser and the detector array. Other embodiments are also disclosed.

Abstract: A light-emitting device is provided. The light-emitting device includes a first conductive cladding layer, an active layer, a second conductive cladding layer, a second conductive electrode, and a short block barrier. The first conductive cladding layer is on a substrate. The active layer is on the first conductive cladding layer. The second conductive cladding layer is on the active layer. The second conductive electrode is on the second conductive cladding layer. The short block barrier is formed on either side of the second conductive electrode.

Abstract: Light-emitting elements have a problem that their light-extraction efficiency is low due to scattered light or reflected light inside the light-emitting elements. The light-extraction efficiency of the light-emitting elements needs to be enhanced by a new method. According to the present invention, a light-emitting element includes a first layer generating holes, a second layer including a light-emitting layer for each emission color and a third layer generating electrons between an anode and a cathode, and the thickness of the first layer is different depending on each layer including the light-emitting layer for each emission color. A layer in which an organic compound and a metal oxide are mixed is used as the first layer, and thus, the driving voltage is not increased even when the thickness is increased, which is preferable.

Abstract: A color tunable light-emitting device is provided which comprises a first light-emitting element, a second light-emitting element, an active light transformative element disposed between the first light-emitting element and the second light-emitting element; and at least one light transmissive element, wherein the first and second light-emitting elements emit light at different wavelengths. Active light transformative elements which may be employed are illustrated by electrochromic elements, photochromic elements, and thermochromic elements.

Abstract: A light emitting element array including an active layer commonly used for light emitting element regions, carrier injection layers which are electrically isolated from each other and which are provided in the respective light emitting element regions, and a resistive layer which has a resistance higher than that of the carrier injection layers and which is provided between the active layer and the carrier injection layers.

Abstract: A light-emitting element having: a gallium oxide substrate on a front surface of which a crystal of a semiconductor material having a light-emitting element part is grown; and a substrate protection layer formed on a back surface of the gallium oxide substrate. A method of making a light-emitting element having the steps of: forming a substrate protection layer on a back surface of a gallium oxide substrate; growing a crystal of a semiconductor material having a light-emitting element part on a front surface of the gallium oxide substrate; and assembling the light-emitting element so as to form a electrical connection for the light-emitting element part.

Abstract: The present invention is to provide a semiconductor device which includes a mounting base and a light-emitting device. The mounting base includes a substrate of a first semiconductor material and a first layer of a material with high thermal conductivity formed over the substrate. Furthermore, the light-emitting device is a multi-layer structure which includes at least a second layer of a second semiconductor material. The light-emitting device is mounted on the first layer of the mounting base. Moreover, the difference of the thermal expansion coefficient between the first semiconductor material and the second semiconductor material is between a predetermined range.

Abstract: Disclosed is a nitride semiconductor light emitting device. The nitride semiconductor light emitting device comprises a buffer layer having a super-lattice layer on a silicon substrate, a first conductive clad layer on the buffer layer, an active layer on the first conductive clad layer, and a second conductive clad layer on the active layer.

Abstract: A light emitting device comprises a light emitting element, and a light conversion member including a phosphor material that is capable of absorbing light emitted from the light emitting element at least partially and emitting light in different wavelength. The light emitting device further comprises a heat dissipation member in a side where the light conversion member as viewed from the light emitting element.

Abstract: Provided is an optical transceiver module of an optical transceiver, which is used for optical communications. The optical transceiver module prevents electrical crosstalk between a light source and a light receiver. Additionally, the optical transceiver module includes an optical transceiver unit including a light source and a light receiver together integrated into a substrate, a circuit unit including a drive circuit driving the light source and a detect circuit reading a signal of the light receiver, and a crosstalk prevention unit connected between the substrate and ground to prevent electrical crosstalk between the light source and the light receiver.

Abstract: A reflection efficiency improved light emitting element comprises a first electrode and a second electrode respectively provided on the partial surface of the first material layer and the second material layer of a light emitting diode; a light transparent electrical conductive layer provided on the partial surface of the second material layer without the second electrode; a light transparent isolation layer and a reflection layer provided on the light transparent electrical conductive layer in order; wherein, according to the light transparent electrical conductive layer and the reflection layer provided independently, the conductive evenness between the first electrode and the second electrode and the reflection efficiency of the reflection layer can be improved, and achieve the purpose of improving the brightness of the light emitting element.

Abstract: A radiation-emitting and/or radiation-receiving semiconductor component comprising a radiation-emitting and/or radiation-receiving semiconductor chip, a molded plastic part which is transparent to an electromagnetic radiation to be emitted and/or received by the semiconductor component and by which the semiconductor chip is at least partially overmolded, and external electrical leads that are electrically connected to electrical contact areas of the semiconductor chip. The molded plastic part is made of a reaction-curing silicone molding compound. A method of making such a semiconductor component is also specified.

Abstract: A single chip with multi-LED comprises a substrate on which an N-type semiconductor layer, an active layer and a P-type semiconductor layer are successively stacked. At least one N-type electrode is connected to the N-type semiconductor layer, and is exposed to an opening through the active layer and the P-type semiconductor layer. Further, at least one groove divides the P-type semiconductor layer into a plurality of separated regions, and a P-type electrode is disposed on each separated region.

Abstract: A pn-heterojunction compound semiconductor light-emitting device includes a crystalline substrate 101, a lower cladding layer 102 formed on a surface of the crystalline substrate and composed of an n-type Group III-V compound semiconductor, a light-emitting layer 103 formed on a surface of the lower cladding layer and composed of an n-type Group III-V compound semiconductor, an upper cladding layer 105 formed on a surface of the light-emitting layer and composed of p-type boron phosphide, an n-type electrode 106 attached to the lower cladding layer and a p-type electrode 107 attached to the upper cladding layer. The lower and upper cladding layers are opposed to each other and sandwich the light-emitting layer to form, in cooperation with the light-emitting layer, a light-emitting portion of a pn-heterojunction structure. The light-emitting device has an intermediate layer 104 composed of an n-type boron-containing Group III-V compound between the light-emitting layer and the upper cladding layer.

Abstract: On a nitride semiconductor layered portion formed on a substrate, there are formed an insulating film and a p-side electrode in this order. Furthermore, an end portion electrode protection layer is formed above the p-side electrode, around a position where cleavage will take place.

Abstract: To increase the lattice constant of AlInGaP LED layers to greater than the lattice constant of GaAs for reduced temperature sensitivity, an engineered growth layer is formed over a substrate, where the growth layer has a lattice constant equal to or approximately equal to that of the desired AlInGaP layers. In one embodiment, a graded InGaAs or InGaP layer is grown over a GaAs substrate. The amount of indium is increased during growth of the layer such that the final lattice constant is equal to that of the desired AlInGaP active layer. In another embodiment, a very thin InGaP, InGaAs, or AlInGaP layer is grown on a GaAs substrate, where the InGaP, InGaAs, or AlInGaP layer is strained (compressed). The InGaP, InGaAs, or AlInGaP thin layer is then delaminated from the GaAs and relaxed, causing the lattice constant of the thin layer to increase to the lattice constant of the desired overlying AlInGaP LED layers. The LED layers are then grown over the thin InGaP, InGaAs, or AlInGaP layer.

Abstract: A display panel includes an insulating substrate, a pixel portion, a gate driver circuit portion, and a drain driver circuit portion. The pixel portion, gate driver circuit portion and drain driver circuit portion are formed out of thin film transistors on the insulating substrate, and the thin film transistors forming the pixel portion, the gate driver circuit portion and the drain driver circuit portion are built in poly-crystalline silicon films, respectively. Each of the poly-crystalline silicon films forming the thin film transistors is formed out of one of at least two kinds of crystal grains different in grain size.