Abstract: Ion mobility spectrometer apparatus may include an ion interface that is operable to hold positive and negative ions and to simultaneously release positive and negative ions through respective positive and negative ion ports. A first drift chamber is operatively associated with the positive ion port of the ion interface and encloses an electric field therein. A first ion detector operatively associated with the first drift chamber detects positive ions from the first drift chamber. A second drift chamber is operatively associated with the negative ion port of the ion interface and encloses an electric field therein. A second ion detector operatively associated with the second drift chamber detects negative ions from said second drift chamber.

Abstract: A mixing chamber probe adaptor comprising a chamber connector and a probe connector is provided. The mixing chamber probe adaptor imparts a fixed spatial joining of a chamber to a probe and allows a mixing chamber to be received by the chamber connector. In some embodiments, the mixing chamber probe adaptor will be adapted to connect to a spring-loaded probe and receive a micro mixing tee. In other embodiments, the mixing chamber probe adaptor may be used with other types of chambers and probes.

Abstract: In a mass spectrometer, ions from an ion source pass through an inlet aperture into a vacuum chamber for transmitting prior to mass analysis by the mass analyzer. The configuration of the inlet aperture forms a sonic orifice or sonic nozzle and with a predetermined vacuum chamber pressure, a supersonic free jet expansion is created in the vacuum chamber that entrains the ions within the barrel shock and Mach disc. Once formed, at least one ion guide with a predetermined cross-section to essentially radially confine the supersonic free jet expansion can focus the ions for transmission through the vacuum chamber. This effectively improves the ion transmission between the ion source and the mass analyzer.

Abstract: A processing method uses a probe of a scanning probe microscope. A fine marker is formed in a processing material by thrusting the probe, which is made of a material harder than the processing material, into a portion of the processing material disposed in the vicinity of an area of the processing material to be processed by the probe during a processing operation. A position of the fine marker on the processing material is detected during the processing operation. A drift amount of the area of the processing material is calculated in accordance with the detected position of the fine marker. A position of the area of the processing material is corrected in accordance with the calculated drift amount.

Abstract: A chamber for exposing a workpiece to charged particles includes a charged particle source for generating a stream of charged particles, a collimator configured to collimate and direct the stream of charged particles from the charged particle source along an axis, a beam digitizer downstream of the collimator configured to create a digital beam including groups of at least one charged particle by adjusting longitudinal spacing between the charged particles along the axis, a deflector downstream of the beam digitizer including a series of deflection stages disposed longitudinally along the axis to deflect the digital beams, and a workpiece stage downstream of the deflector configured to hold the workpiece.

Abstract: A method for detecting the concentration of one or more gas species by using infrared radiation emitted from one or more sources into a sample cell which is a hollow waveguide with multiple bends collectively greater than 180 degrees in three dimensions, the infrared radiation being quasi-focused into a beam with an angle of incidence between greater than approximately 0° and approximately 10° relative to a longitudinal axis of a first linear segment of the sample cell proximate the source, then detecting two or more signals in which one of the signals is used to compensate for water vapor. The methods can detect gas concentrations down to 1 ppm or less.

Abstract: The invention provides a video camera fitted with telemetry means which provide, in parallel with the image, information relating to the distance of each of the filmed points of an image. A clip key calculated on the information relating to the distance may be calculated in the same way as a chroma-key without using a colored background.

Abstract: A detector module includes a plurality of detector elements, each of which is provided with a first contact point. Further, a circuit board includes second contact points. In order to be able to electrically connect a larger number of detector elements to the circuit board, the first contact points and the second contact points are arranged in a congruent grid and are electrically connected by an electrical elastomer connector.

Abstract: A photodetector for X-ray applications includes a photodiode at each pixel location that is gated to reduce leakage of charge from the photodiode. A gate layer may be disposed around the entire peripheral edge of the detector, and maintained at a common potential with a contact layer, or at a different potential. A passivation or dielectric layer separates the gate layer from the photodiode. Leakage around the edge of the diode that can result from extended exposure to radiation is reduced by the gate layer.

Abstract: A closed drift ion source which includes a channel having an open end, a closed end, and an input port for an ionizable gas. A first magnetic pole is disposed on the open end of the channel and extends therefrom in a first direction. A second magnetic pole disposed on the open end of the channel and extends therefrom in a second direction, where the first direction is opposite to the second direction. The distal ends of the first magnetic pole and the second magnetic pole define a gap comprising the opening in the first end. An anode is disposed within the channel. A primary magnetic field line is disposed between the first magnetic pole and the second magnetic pole, where that primary magnetic field line has a mirror field greater than 2.

Abstract: An electron impact ion source includes an ionization chamber in which a first rf multipole field can be generated and an ion guide positioned downstream from the ionization chamber in which a second rf multipole field can be generated wherein electrons are injected into the ionization chamber along the axis (on-axis) to ionize an analyte sample provided to the ionization chamber.

Abstract: This invention discloses a scanning mechanism of an ion implanter. The mechanism is a PR-PRR type parallel mechanism with two subchains and two DOFs, driving the wafer holder to scan when the first subchain and the second subchain are translated in the same direction at the same speed and adjusting the rotational angle of the wafer holder when the first moving link (30) and the second moving link (32) in the first subchain and the second subchain have different translation amounts in the same direction or opposite directions. The driving motor for the scanning mechanism is provided outside the implant chamber. The invention also solves problems like low rigidity and large accumulation errors of existing serial scanning mechanisms and the effect of the electromagnetic field of the motor within the ion implant chamber on the trajectory of the ion beam.

Abstract: The Grunn equation: Depth = 0.046 ? ? ( V acc ) n ? is modified to accurately predict depth of electron beam penetration into a target material. A two-layer stack is formed comprising a thickness of the target material overlying a detection material exhibiting greater sensitivity to the electron beam than the target material. The target material is exposed to electron beam radiation of different energies, with the threshold energy resulting in a changed physical property of the detection material below a predetermined value marking a penetration depth corresponding to the target material thickness. Utilizing the threshold energy (Vacc), the target material thickness (Depth), and the known target material density (?), the numerical power “n” of the Grunn equation is calculated to fit experimental results. So modified, the Grunn equation accurately predicts the depth of penetration of electron beams of varying energies into the target material.

Abstract: The present disclosure provides a device and method for exposing a person to ultraviolet radiation in tanning wavelengths which is emitted from a discharge lamp having a plurality of grooves formed in its outer periphery along a helical path. The discharge lamp includes, inter alia, an elongated vitreous tube, first and second electrode assemblies and a coating on the interior the interior of the tube. The coating is applied on an interior of the tube along the entire length for emitting ultraviolet radiation in tanning wavelengths when a voltage is applied across the first and second electrodes. In a first representative embodiment, the plurality of grooves are interconnected and the helical path is continuous. Alternatively, the plurality of grooves can be axially offset and the helical path can be discontinuous.

Abstract: An optical transducer for determining the presence or absence of liquid or the like in a reservoir includes a housing with a hollow interior and an optical probe that extends through the housing. The optical probe has a central axis, a proximal end positioned in the hollow interior and a distal end positioned outside of the housing. The distal end has first and second measurement surfaces that intersect at a transverse edge. The transverse edge extends at an acute angle with respect to the central axis. A light source is arranged for projecting radiant energy into the optical probe toward the distal end. A photosensor is arranged for detecting radiant energy reflected from the distal end to thereby detect the presence and absence of liquid on the optical probe.

Abstract: Systems and methods for fluid level detection are disclosed. In one embodiment, a sensor assembly includes at least one optical fiber adapted to at least one of transmit and receive an optical signal, and a moveable float member. The float member is adapted to move in a first direction as the fluid level increases and in a second direction as the fluid level decreases. The float member blocks the optical signal at a first value of the fluid level, and allows the optical signal to pass at a second value of the fluid level. The presence or absence of the optical signal is detected to determine the level of fluid.

Abstract: An erasure assembly for imaging plates comprised of a cover member and a base member, the cover member in the form of an inverted rectangular tray having a plurality of light sources and reflective sources mounted therein behind a diffuser glass member, the base member, complimentary with the cover member having a support area for the placement of imaging plates on their non-reactive surface, their photo-stimulable surface facing upwardly, the cover member closed upon the base member and there being a control means to activate the light sources for a time sufficient to erase the retained images on the photo-stimulable surface of the image plates.

Abstract: A radiation image detector that includes a radiation image recording medium capable of recording a radiation image and detects the signal outputted from the medium in accordance with the radiation image recorded on the medium, in which a real-time signal is obtaining with a simple and low-cost structure of the detector while the medium is being exposed to radiation. The charges generated in the photoconductive layer and stored in the storage section are detected by the first detecting section with the use of the first and second striped electrodes, each made of a plurality of wire electrodes, and the real-time signal while the medium is being exposed to radiation is obtained by the second detecting section connected to the second striped electrode by detecting the current flowing through the second striped electrode in accordance with the amount of charges generated in the photoconductive layer.

Abstract: A nonvolatile memory element is formed by layering a lower electrode, a variable resistor and an upper electrode in sequence. The variable resistor is formed in which crystallinity and amorphism are mixed. Thus, the nonvolatile memory element is formed. More preferably, the variable resistor is a praseodymium-calcium-manganese oxide represented by a general formula, Pr1-xCaxMnO3, that has been formed at a film forming temperature from 350° C. to 500° C. Alternatively, the variable resistor is formed as a film at a film forming temperature that allows the variable resistor to become of an amorphous state or a state where crystallinity and amorphism are mixed and, then, is subjected to an annealing process at a temperature higher than the film forming temperature, in a temperature range where the variable resistor can maintain the state where crystallinity and amorphism are mixed.

Abstract: The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.

Abstract: An organic electronic device of the present invention includes a substrate, at least two electrodes formed on the substrate, a conductive organic thin film that is formed on the substrate and electrically connects the electrodes, and a coating film for coating at least a portion of the electrodes. The conductive organic thin film is a polymer of organic molecules containing a conjugated-bondable group, and one end of each of the organic molecules is chemically bonded to the surface of the substrate and the conjugated-bondable groups in the organic molecules are polymerized with other conjugated-bondable groups to form a conjugated bond chain. The coating film electrically connects the electrodes to the conductive organic thin film and achieves a smaller connection resistance than that in the case where the electrodes and the conductive organic thin film are connected directly.

Abstract: There is provided a liquid crystalline material, suitable for use as an organic semiconductor material, in which, even when the charge transport distance is long, the charge transport capability is satisfactory, the charge mobility is high, and the dependence of the charge transport properties upon field strength is small. The organic semiconductor material having rodlike low-molecular weight liquid crystallinity comprises: a core structure comprising L 6 ? electron rings, M 8 ? electron rings, N 10 ? electron rings, O 12 ? electron rings, P 14 ? electron rings, Q 16 ? electron rings, R 18 ? electron rings, S 20 ? electron rings, T 22 ? electron rings, U 24 ? electron rings, and V 26 ? electron rings, wherein L, M, N, O, P, Q, R, S, T, U, and V are each an integer of 0 (zero) to 6 and L+M+N+O+P+Q+R+S+T+U+V=1 to 6; and a terminal structure attached to at least one end of the core structure, the terminal structure being capable of developing liquid crystallinity.

Abstract: A device includes a plurality of organic electronic devices disposed on a substrate, wherein each of the organic electronic devices comprises a first electrode and a second electrode. Furthermore, the device includes an organic layer disposed between the first and second electrodes of each of the plurality of organic electronic devices. Additionally, the device includes an interconnect element, wherein the interconnect element is configured to electrically couple the respective first and second electrodes of each of the plurality of organic electronic devices.

Abstract: A method of manufacturing a thin film transistor array panel is provided, the method includes: a substrate; a data line disposed on the substrate; an interlayer insulating layer disposed on the data line; a gate line disposed on the interlayer insulating layer and including a gate electrode; a gate insulating layer disposed on the gate line and the interlayer insulating layer, the gate insulating layer and the interlayer insulating film having a contact hole exposing the data line; a first electrode disposed on the gate insulating layer and connected to the data line through the contact hole; a second electrode disposed opposite the first electrode with respect to the gate electrode; an organic semiconductor disposed on the first and the second electrodes and contacting the first and the second electrodes; and a passivation member disposed on the organic semiconductor.

Abstract: A circuit and method are disclosed for reducing device mismatch due to trench isolation related stress. One or more extended active regions are formed on the substrate, wherein the active regions being extended from one or more ends thereof, and one or more operational devices are placed on one or more active regions, wherein the extended active region has at least a length twice as much as a distance between gates of two neighboring operational devices.

Abstract: A vertical transfer charge-coupled device for vertically transferring signal charges, a horizontal transfer charge-coupled device for receiving and horizontally transferring the transferred signal charges, an unwanted electron eliminator, and a potential barrier between the horizontal transfer charge-coupled device and the unwanted electron eliminator are provided on a semiconductor substrate. The potential barrier includes a first n-type diffusion layer, a second n-type diffusion layer that is in contact with one end thereof, and a third n-type diffusion layer that is in contact with the other end. The second n-type diffusion layer and the third n-type diffusion layer have higher impurity concentrations than the first n-type diffusion layer.

Abstract: An organic electroluminescent display (ELD) device having a first substrate having an array element layer and a second substrate having an organic electroluminescent diode includes a gate line formed on the first substrate, a data line formed on the first substrate, a power supply line spaced apart from the data line and formed on the first substrate, the power supply line being formed with same material as the gate line in a same process as the gate line, a switching thin film transistor having a semiconductor layer formed of amorphous silicon, a driving thin film transistor formed near a crossing portion of the switching thin film transistor and the power supply line, a connecting electrode connected to the driving thin film transistor and an electrical connecting pattern for electrically connecting the connecting electrode to the organic electroluminescent diode.

Abstract: The invention relates to a light source comprising a light-emitting element, which emits light in a first spectral region, and comprising a luminophore, which comes from the group of alkaline-earth orthosilicates and which absorbs a portion of the light emitted by the light source and emits light in another spectral region. According to the invention, the luminophore is an alkaline-earth orthosilicate, which is activated with bivalent europium and whose composition consists of: (2-x-y)SrOx(Ba, Ca)O (1-a-b-c-d)SiO2aP2O5bAl2O3cB2O3dGeO2: y Eu2+ and/or (2-x-y)BaOx((Sr, Ca)O (1-a-b-c-d)SiO2aP2O5bAl2O3cB2O3dGeO2: y Eu2+. The desired color (color temperature) can be easily adjusted by using a luminophore of the aforementioned type.

Abstract: Provided is a self-scanning light-emitting element array chip structured on a substrate using Si. A lattice mismatching buffer layer (32) is formed on a Si substrate (30). On the lattice mismatching buffer layer (32), successively stacked are an n-type AlGaAs layer (14), a p-type AlGaAs layer (16), an n-type AlGaAs layer (18), and a p-type AlGaAs layer (20) in this order. On the AlGaAs layer (20) provided is an anode electrode (22), on the AlGaAs layer (18) a gate electrode (24), on the bottom surface of the GaAs substrate a cathode electrode (26).

Abstract: A semiconductor light emitting apparatus is proposed, which has thyristor without increasing number of constituent semiconductor layers, with large degree of freedom of selection of ON voltage.

Abstract: Provided are a vertical GaN-based LED and a method of manufacturing the same. The vertical GaN-based LED includes an n-electrode. An AlGaN layer is formed under the n-electrode. An undoped GaN layer is formed under the AlGaN layer to provide a two-dimensional electron gas layer to a junction interface of the AlGaN layer. A GaN-based LED structure includes an n-type GaN layer, an active layer, and a p-type GaN layer that are sequentially formed under the undoped GaN layer. A p-electrode is formed under the GaN-based LED structure. A conductive substrate is formed under the p-electrode.

Abstract: A photonic structure for “white” light generation by phosphors under the excitation of a LED. The photonic structure mounts the LED and an optically transparent nanocomposite matrix having dispersed therein phosphors which will emit light under the excitation of the radiation of the LED. The phosphors dispersed in the matrix may be nanocrystalline, or larger sized with the addition of non light emitting, non light scattering nanoparticles dispersed within the matrix material so as to match the index of refraction of the matrix material to that of the phosphors. The nanocomposite matrix material may be readily formed by molding and formed into a variety of shapes including lenses for focusing the emitted light. A large number of the photonic structures may be arranged on a substrate to provide even illumination or other purposes.

Abstract: A reflection-type optoelectronic semiconductor device has an LED chip disposed on a first conducting wire portion, a second conducting wire portion connected to the LED chip via a connection wire, a packaging body for sealing the LED chip and part of the first conducting wire portion and the second conducting wire portion, a reflecting face disposed in an opposite direction of a light emission face of the LED chip and surrounding the packaging body, and an optical spectrum conversion layer coated onto the packaging body. A primary light emitted by the LED chip is reflected to the optical spectrum conversion layer by the reflecting face to undergo light excitation for producing a secondary light. The primary light and the secondary light are combined to generate a mixed light. A lens can be placed in the travel direction of the mixed light to change the distribution of the mixed light.

Abstract: A method and resulting structures are disclosed for fabricating a high efficiency high extraction light emitting diode suitable for packaging. The method includes the steps of adding a light emitting active portion of wide-bandgap semiconductor material to a conductive silicon carbide substrate, joining the added active portion to a conductive sub-mounting structure, and removing a portion of the silicon carbide substrate opposite the added active portion to thereby reduce the overall thickness of the joined substrate, active portion and sub-mounting structure. The resulting the sub-mounting structure can be joined to a lead frame with the active portion positioned between the silicon carbide substrate and the sub-mounting structure to thereby use the sub-mounting structure to separate the active portion from the lead frame and avoid undesired electrical contact between the active portion and the lead frame.

Abstract: An LED illumination apparatus includes at least one connector and a lighting drive circuit. The connector is connected to an insertable and removable card-type LED illumination source, which includes multiple LEDs that have been mounted on one surface of a substrate. The lighting drive circuit is electrically connected to the card-type LED illumination source by way of the connector. The card-type LED illumination source preferably includes a metal base substrate and the multiple LEDs that have been mounted on one surface of the metal base substrate. The back surface of the metal base substrate, including no LEDs thereon, thermally contacts with a portion of the illumination apparatus. A feeder terminal to be electrically connected to the connector is provided on the surface of the metal base substrate on which the LEDs are provided.

Abstract: A light-emitting semiconductor component has a number of layers that predominantly contain elements of groups II and VI of the Periodic Table. The layers are applied epitaxially on a substrate, preferably made of InP, and include a p-doped covering layer and an n-doped covering layer having lattice constants of which correspond to that of the substrate. An undoped active layer lies between the two covering layers. The active layer forms a quantum well structure in interaction with its neighboring layers, a lattice constant of the active layer being made smaller than that of the neighboring layers.

Abstract: An opto-electronic device, such as an OLED or organic solar cell, having an electrode structure for use as a cathode. The electrode structure includes an electrically conductive layer and an inorganic layer, wherein the inorganic layer is made of at least one oxide-based alkali or alkaline earth metal intercalation compound. The intercalation compound having the chemical formula of Ax(MxOz), where x, y, z are positive integers greater than zero, A is an alkali metal or alkaline earth element, M is a metal, transitional metal or metallic alloy, and O is oxygen. Furthermore, a buffer layer made of alkali oxides or halides, or alkaline earth oxides or halides can be provided between the conductive layer and the inorganic layer.

Abstract: A semiconductor optical element having a includes an n-type GaAs buffer layer, an n-type AlGaInP cladding layer, a first InGaAsP (including zero As content)guide layer without added dopant impurities, an InGaAsP (including zero In content) active layer, a second InGaAsP (including zero As content)guide layer without added dopant impurities, a p-type AlGaInP cladding layer, a p-type band discontinuity reduction layer, and a p-type GaAs contact layer sequentially laminated on an n-type GaAs substrate C or Mg is the dopant impurity in the p-type GaAs contact layer, the p-type band discontinuity reduction layer, and the p-type AlGaInP cladding layer.

Abstract: A vertical SCR switch to be controlled by a high-frequency signal having at least four main alternated layers. The switch includes a gate terminal and a gate reference terminal connected via integrated capacitors to corresponding areas. In the case of a thyristor, having on its front surface side a main P-type semiconductor area formed in an N-type gate semiconductor area, a first portion of the main area being connected to one of the main areas, a second portion of the main area is connected to one of the control terminals via a first integrated capacitor, and a portion of the gate area being connected to the other of the control terminals via a second integrated capacitor.

Abstract: An objective is to provide an avalanche photodiode that is excellent in device characteristics such as reliability. An avalanche photodiode is provided, which includes a substrate 1 formed with a light receiving region 3 on a multiplication layer 119, and formed with layers of differing semiconductor type with the multiplication layer 119 intervening, a ring-shaped groove 7 formed on the end face of the substrate 1 on its light-receiving-region side, in such a way that the groove surrounds the light receiving region 3, and one or more steps 5 provided on a side wall of the ring-shaped groove 7, in a range of from ¼ to ¾ of the depth of the groove.

Abstract: A thin film device includes a metal sulfide layer formed on a single crystal silicon substrate by epitaxial growth; and a compound thin film with ionic bonding, which is formed on the metal sulfide layer by epitaxial growth. Alternatively, a thin film device includes a metal sulfide layer formed on a single crystal silicon substrate by epitaxial growth; and at least two compound thin films with ionic bonding, which are formed on the metal sulfide layer by epitaxial growth. For example, (11 20) surface AlN/MnS/Si (100) thin films formed by successively stacking a MnS layer (about 50 nm thick) and an AlN layer (about 1000 nm thick) on a single crystal Si (100) substrate, are used as a substrate, and a (11 20) surface GaN layer (about 100 nm thick) operating as a light emitting layer is formed on the substrate, thereby fabricating a thin film device.

Abstract: New devices having horizontally-disposed nanofabric articles and methods of making same are described. A discrete electromechanical device includes a structure having an electrically-conductive trace. A defined patch of nanotube fabric is disposed in spaced relation to the trace; and the defined patch of nanotube fabric is electromechanically deflectable between a first and second state. In the first state, the nanotube article is in spaced relation relative to the trace, and in the second state the nanotube article is in contact with the trace. A low resistance signal path is in electrical communication with the defined patch of nanofabric. Under certain embodiments, the structure includes a defined gap into which the electrically conductive trace is disposed. The defined gap has a defined width, and the defined patch of nanotube fabric spans the gap and has a longitudinal extent that is slightly longer than the defined width of the gap.

Abstract: A vertical MOS transistor has a source region, a channel region, and a drain region that are vertically stacked, and a trench that extends from the top surface of the drain region through the drain region, the channel region, and partially into the source region. The vertical MOS transistor also has an insulation layer that lines the trench, and a conductive gate region that contacts the insulation layer to fill up the trench.

Abstract: A solid state imaging device includes a substrate of a first conductivity type. A transistor, which includes a first gate electrode and a first and second impurity areas, is provided on a surface of the substrate. The first and second impurity areas are formed in the surface of the substrate and sandwich a region under the first gate electrode. A third impurity area of a second conductivity type is formed in the surface of the substrate and spaced from the second impurity area at an opposite side to the first gate electrode. A fourth impurity area is formed under the second impurity area and connected to the third impurity area. A second gate electrode is provided above the substrate. A fifth impurity area of the second conductivity type is formed in the surface of the substrate. The third and fifth impurity areas sandwich a region under the second gate electrode.

Abstract: A pixel cell with controlled leakage is formed by modifying the location and gate profile of a high dynamic range (HDR) transistor. The HDR transistor may have a dual purpose, acting as both a leaking transistor and either a transfer gate or a reset gate. Alternatively, the HDR transistor may be a separate and individual transistor having the gate profile of a transfer gate or a reset gate. The leakage through the HDR transistor may be controlled by modifying the photodiode implants around the transistor, adjusting the channel length of the transistor, or thinning the gate oxide on the transistor. The leakage through the HDR transistor may also be controlled by applying a voltage across the transistor.

Abstract: This integrated circuit comprises a capacitor (23) formed above a substrate (1) inside a first cavity in a dielectric and comprising a first electrode, a second electrode, a thin dielectric layer placed between the two electrodes, and a structure (7) for connection to the capacitor. The connection structure is formed at the same level as the capacitor in a second cavity narrower than the first cavity, the said second cavity being completely filled by an extension of at least one of the electrodes of the capacitor.

Abstract: A single transistor vertical memory gain cell with long data retention times. The memory cell is formed from a silicon carbide substrate to take advantage of the higher band gap energy of silicon carbide as compared to silicon. The silicon carbide provides much lower thermally dependent leakage currents which enables significantly longer refresh intervals. In certain applications, the cell is effectively non-volatile provided appropriate gate bias is maintained. N-type source and drain regions are provided along with a pillar vertically extending from a substrate, which are both p-type doped. A floating body region is defined in the pillar which serves as the body of an access transistor as well as a body storage capacitor. The cell provides high volumetric efficiency with corresponding high cell density as well as relatively fast read times.

Abstract: There is provided a semiconductor device that comprises a first impurity diffusion region formed on a silicon substrate (semiconductor substrate), a first interlayer insulating film (first insulating film) formed over the silicon substrate, a first hole formed in the first interlayer insulating film, a first conductive plug formed in the first hole and connected electrically to the first impurity diffusion region and having an end portion protruded from an upper surface of the first interlayer insulating film, a conductive oxygen barrier film formed to wrap the end portion of the first conductive plug, and a capacitor formed by laminating a capacitor lower electrode, a capacitor dielectric film, and a capacitor upper electrode sequentially on the conductive oxygen barrier film.

Abstract: A tunable element in the microwave frequency range is described that may include one or more tunable elements that are directly digitally controlled by a digital bus connecting a digital control circuit to each controlled element. In particular, each digital signal is filtered by a digital isolation technique so that the signal reaches the tunable elements with very low noise. The low noise digital signals are then converted to analog control voltages. The direct D/A conversion is accomplished by a special D/A converter which is manufactured as an integral part of a substrate. This D/A converter in accordance with the invention may consist of a resistor ladder or a directly digitally controlled capacitor. The direct digitally controlled capacitor may be a cantilevered type capacitor having multiple separate electrodes or sub-plates representing binary bits that may be used to control the capacitor.

Abstract: A semiconductor device comprises varactor regions Va and transistor regions Tr. An active region for a varactor is formed with a substrate contact impurity diffusion region obtained by doping an N well region with N-type impurity at a relatively high concentration. However, any extension region (or LDD region) as in a varactor of a known semiconductor device is not formed in the active region for a varactor. On the other hand, parts of a P well region located to both sides of the polysilicon gate electrode in the transistor region Tr are formed with high-concentration source/drain regions and extension regions. Therefore, the extendable range of a depletion layer is kept wide to extend the capacitance variable range of the varactor.