Abstract: A method for manufacturing a power semiconductor device which includes forming a semiconductor region such as a polysilicon layer or epitaxially grown silicon over a region implanted with source implants and applying heat in a thermal step to cause the source implants to diffuse into the semiconductor region.

Abstract: A semiconductor device includes a pair of first source/drain regions disposed on a silicon substrate. A first silicon epitaxial layer pattern defines a gate forming region that exposes the silicon substrate between the pair of first source/drain regions. A first gate insulation layer is disposed on the silicon substrate in the gate forming region. A second gate insulation layer is disposed on a sidewall of the first silicon epitaxial layer pattern. A second silicon epitaxial layer pattern is disposed in the gate forming region and on the first silicon epitaxial layer pattern. A pair of second source/drain regions is disposed on the second silicon epitaxial layer pattern. A third gate insulation layer exposes the second silicon epitaxial layer pattern in the gate forming region and covers the pair of second source/drain regions. A gate is disposed on the second silicon epitaxial layer pattern in the gate forming region.

Abstract: In a method for fabricating an electronic device including a transistor with a drain extension structure, a correspondence between a size of a gate electrode of the transistor and ion implantation conditions or heat treatment conditions for forming the drain extension structure is previously obtained. This correspondence satisfies that the transistor has a given threshold voltage. After formation of the gate electrode and measurement of the size of the gate electrode, ion implantation conditions or heat treatment conditions for forming the drain extension structure are set based on the previously-obtained correspondence and the measured size of the gate electrode. Ion implantation or heat treatment for forming the drain extension structure is performed under the ion implantation conditions or heat treatment conditions that have been set.

Abstract: A trench isolation method for a semiconductor device, wherein a capping layer formed of an insulating material fills a recess generated at a border edge between an active area and an inactive area. The border edge is defined by a trench filled with insulating material. Filling the recess suppresses defects of the semiconductor device. Reduction of the isolating ability, due to the formation of gate poly residue during the forming of a gate, is prevented. Reduction of the threshold voltage of a transistor, caused by electric field concentration due to the gate poly residue, is suppressed. An oxide layer is also provided which protects an nitride pad during a plasma process.

Abstract: The invention is directed to a method for manufacturing a fin field effect transistor including a fully silicidated gate electrode. The method is suitable for a substrate including a fin structure, a straddle gate, a source/drain region and a dielectric layer formed thereon, wherein the straddle gate straddles over the fin structure, the source/drain region is located in a portion of the fin structure exposed by the straddle gate and the dielectric layer covers the substrate. The method includes steps of performing a planarization process to remove a portion of the dielectric layer and the first salicide layer until the surface of the straddle gate is exposed and performing a salicide process to convert the straddle gate into a fully silicidated gate electrode.

Abstract: A process for preparing a nitride based semiconductor device in accordance with the present invention comprises growing a high temperature AlN single crystal layer on a substrate; growing a first GaN layer on the high temperature AlN single crystal layer in a first V/III ratio, under a first pressure of 300 Torr or more, such that the predominant direction of growth is the lateral direction; and growing a second GaN layer on the first GaN layer in a second V/III ratio lower than the first V/III ratio, under a second pressure lower than the first pressure such that the predominant direction of growth is the lateral direction.

Abstract: A semiconductor component having a composite via structure with an enhanced aspect ratio and a method for manufacturing the semiconductor component. Vias having a first aspect ratio are formed in a contact layer disposed on a semiconductor substrate and filled with a metal. The metal is planarized and a dielectric layer is formed over the contact layer. Via extension structures having the same aspect ratio as those in the contact layer are formed in the dielectric layer and aligned with the vias in the contact layer. The vias in the dielectric layer are filled with metal and the metal is planarized. The contact vias in the contact layer and the dielectric layer cooperate to form a composite via structure having the enhanced aspect ratio. Additional dielectric layers having via structures can be included in the composite contact structure to further enhance the aspect ratio of the via structure.

Abstract: The semiconductor device comprises a silicon wafer 10, a multilayer interconnection 12 buried in inter-layer insulation film formed on the upper surface of the silicon wafer 10, and a silicon nitride film 16b which is formed on the back surface of the silicon wafer 10 and is an insulation film having a tensile stress, relaxing a stress exerted to the silicon wafer 10 by the inter-layer insulation films in which the multilayer interconnection 12 is buried.

Abstract: A method of simultaneously controlling the ADI-AEI CD differences of openings having different sizes is disclosed. The openings are formed by: forming an ARC and a photoresist layer with a first and a second opening patterns of different sizes therein on a material layer, and etching the ARC and the material layer with the photoresist layer as a mask to form in the material layer a first/second opening corresponding to the first/second opening pattern, wherein the etching recipe makes the first/second opening smaller than the first/second opening pattern by a first/second size difference (?S1/?S2) and the difference between ?S1 and ?S2 is a relative size difference. The method is characterized by that an etching parameter affecting the relative size difference is set at a first value in etching the ARC and at a second value different from the first value in etching the material layer.

Abstract: A method is provided for processing a substrate including providing a processing gas comprising an organosilicon compound comprising a phenyl group to the processing chamber, and reacting the processing gas to deposit a low k silicon carbide barrier layer useful as a barrier layer in damascene or dual damascene applications with low k dielectric materials.

Abstract: A minute structure is provided in which electroconductive paths are only formed in nanoholes, and a material is filled in the nanoholes, which are disposed in a specific area, by using the electroconductive paths.

Abstract: In a conductive layer fabrication method, a lower resist layer (210) is formed on a semiconductor substrate. A water soluble resin layer (212) is formed over the lower resist layer. Heat treatment is performed so as to produce a cross-linking layer (211) between the lower resist layer and the water soluble resin layer, the cross-linking layer being insoluble in an organic material. A resist containing a photosensitizing agent is applied to form an upper resist layer (214) over the cross-linking layer. The upper and lower resist layers are irradiated by a beam through a photomask. A portion of the upper resist layer and a portion of the cross-linking layer are removed through development to form an upper opening. A portion of the lower resist layer is removed using a developer to form a lower opening. Then a conductive layer (302) is formed on the semiconductor substrate through the upper and lower openings.

Abstract: In damascene process integration, a reducing plasma is applied after the etch stop or barrier layer is opened over a copper layer. Currently known methods for opening barrier layers suffer from the disadvantage that they cause at least some of the underlying copper to oxidize to copper oxide. Because copper oxide is selectively removed by subsequent wet cleaning, voids can form where damaged copper (e.g., copper oxide) is removed, thus compromising the reliability of metal-to-metal contact in vias. The present invention advantageously overcomes this and other disadvantages of the prior art through the use of a hydrogen plasma following the barrier layer opening step, which repairs damaged copper (e.g., reduces copper oxide to copper), thus preventing and/or diminishing defects in metal-to-metal contacts in vias and concomitantly improving the reliability of the same.

Abstract: This invention provides a polishing medium for chemical-mechanical polishing, comprising an oxidizing agent for a conductor, a protective-film-forming agent for protecting a metal surface, an acid, and. water; (1) the polishing medium having a pH of 3 or less, and the oxidizing agent being in a concentration of from 0.01 to 3% by weight, or (2) the polishing medium containing abrasive grains having an average particle diameter of 50 nm or less, and the abrasive grains having standard deviation of particle size distribution in a value of more than 5 nm.

Abstract: A wafer has thereon a plurality of integrated circuit die areas, scribe line that surrounds each of the integrated circuit die areas, and a laser marking region having therein a laser marking feature. A pad layer is formed on the wafer. AA photoresist pattern is formed on the pad layer. The AA photoresist pattern includes trench openings that expose STI trench areas within the integrated circuit die areas and dummy openings that merely expose a transitioning region of the laser-marking region. The pad layer and the substrate are etched through the trench openings and dummy openings, to form STI trenches within the integrated circuit die areas and dummy trenches in the transitioning region. A trench fill dielectric is deposited over the wafer and fills the STI trenches and the dummy trenches. Using the pad nitride layer as a polish stop layer, chemical mechanical polishing the trench fill dielectric.

Abstract: The present invention provides a method of defining polysilicon patterns. The method forms a polysilicon layer on a substrate, and a patterned mask on the polysilicon layer. Then, a first etching process is performed to remove a portion of the polysilicon layer not covered by the mask, thus forming a plurality of cavities in the polysilicon layer. A strip process is performed to strip the mask utilizing gases excluding O2. Finally, a second etching process is performed to remove a portion of the polysilicon layer, thus extending the plurality of cavities down to a surface of the substrate.

Abstract: A selective dry etch process includes use of an etchant that includes C2HxFy, where x is an integer from three to five, inclusive, where y is an integer from one to three, inclusive, and where x plus y equals six. The etchant etches doped silicon dioxide with selectivity over both undoped silicon dioxide and silicon nitride. Thus, undoped silicon dioxide and silicon nitride may be employed as etch stops in dry etch processes which utilize the C2HxFy-containing etchant. C2HxFy may be employed as either a primary etchant or as an additive to another etchant or etchant mixture.

Abstract: A method and apparatus to provide a low resistance interconnect. A void is defined in the sacrificial layer that is proximate to an active layer. An overgrowth layer is formed in the void and over portions of the sacrificial layer adjacent to the void. A ridge section is defined in the overgrowth layer and portions of the sacrificial layer are removed to define a shank section in the overgrowth layer under the ridge section. The ridge section having a greater lateral dimension than the shank section to reduce electrical resistance between the active layer and electrical interconnects to be electrically coupled to the ridge section.

Abstract: This invention relates to a nonwoven article comprising a heterogeneous blend comprising: 1) from 60 to 99 weight percent of one or more semi-crystalline polymers (based upon the weight of the semi-crystalline and semi-amorphous polymers), each semi-crystalline polymer comprising propylene and from 0 to 5 weight % alpha-olefin comonomer (based upon the weight of the polymer), said semi-crystalline polymers each having a melting point between 100 and 170° C. and a melt flow rate of 2000 dg/min or less; and 2) from 1 to 40 weight % of one or more semi-amorphous polymers (based upon the weight of the semi-crystalline and semi-amorphous polymers), each semi-amorphous polymer comprising propylene and from 10 to 25 weight % of one or more C2 and or C4 to C10 alpha-olefin comonomers, said semi-amorphous polymers each having: a) heat of fusion of 4 to 70 J/g; b) a Melt Flow Rate of 0.

Abstract: A novel porous fibrous structure containing from 10 to 100% by weight of wet heat bonding fibers, having cellular cavities in the fibrous structure of the fibers, in which a plurality of indefinite cellular cavities are present independently or in a state of partially connected in the inside of the fibrous structure, at least a portion of the fibers constituting the fibrous structure is heat bonding by the wet heat bonding fibers, and a process for producing such porous fibrous structure.

Abstract: A refractory container for evaporating metals, having significantly improved useful life and corrosion resistance properties, said container consists essentially of a refractory boride, boron nitride, and about 0.10 to 10 wt. % of a rare earth metal compound selected from one of an oxide, a nitride, a carbide, or mixtures thereof.

Abstract: An aluminum nitride sintered body comprising crystal grains of an average grain size (D50) of 0.1 to 2.5 ?m, and having a pore area ratio of not larger than 1×10?7, a pore density of not larger than 0.05 pores/mm2 of pores having diameters of not smaller than 1 ?m, and a Vickers' hardness in a range of 14 to 17 GPa. The aluminum nitride sintered body has a very small pore density despite of its relatively small crystal grain size, features excellent strength and mirror machinability, and is particularly useful as a material for circuit substrates on which fine wiring patterns are formed.

Abstract: A thin film capacity element composition includes a first bismuth layer-structured compound having positive temperature characteristics, that a specific permittivity rises as the temperature rises, in at least a part of a predetermined temperature range and a second bismuth layer-structured compound having negative temperature characteristics, that a specific permittivity declines as a temperature rises, in at least a part of said predetermined temperature range at any mixing ratio; wherein the bismuth layer-structured compound is expressed by a composition formula of CaxSr(1-x)Bi4Ti4O15.

Abstract: The invention relates to the manufacture of molecular sieve adsorbents, which are selective towards oxygen from its gaseous mixture with argon and/or nitrogen. More particularly, this invention relates to the manufacture of molecular sieve adsorbents useful for the separation of oxygen-argon gaseous mixture. More specifically, the invention relates to the manufacture and use of a molecular sieve adsorbent by cation exchange in zeolites by rare earth cations to obtain oxygen selective adsorbent from its gaseous mixture with nitrogen and argon at ambient conditions of temperature and pressure. Thus prepared adsorbent is useful for the separation and purification of nitrogen and argon from its mixture with oxygen.

Abstract: A composition is provided that includes a product of combining, in the presence of a free radical initiator a catalyst precursor and at least one monomer wherein the monomer and the catalyst precursor are poiymerizable by free-radical polymerization and wherein the catalyst precursor compound is represented by the formula: wherein each X is an abstractable ligand; each R, R?, R?, R??, Rp1 and Rp2 is independently hydrogen or a hydrocarbyl group provided at least one of Rp1, Rp2, and R?? can be polymerized by a free radical initiator; and M is a Group-4-11 metal.

Abstract: Catalyst compositions useful for the polymerization or oligomerization of olefins are disclosed. Certain of the catalyst compositions comprise N-pyrrolyl substituted nitrogen donors. Also disclosed are processes for the polymerization or oligomerization of olefins using the catalyst compositions.

Abstract: The present invention relates to methods to treat fabrics with lipophilic fluid, a polar phase and bleach system. The present invention is also directed to compositions containing lipophilic fluid, a polar phase and a bleach system.

Abstract: The present invention relates generally to a method for the prophylaxis and treatment of infection by microorganisms in biological environments from where the microorganisms acquire iron, heme or porphyrin, generally but not exclusively for growth. Particular biological environments contemplated by the present invention include but are not limited to vascular regions and cavities as well as mucosal membranes in animals including mammals, reptiles, amphibians and fish and in avian species as well as hooves of livestock animals. The method of the present invention involves interrupting, reducing or otherwise antagonizing the interaction between a microbial-derived polypeptide, such as but not limited to a polypeptide having cysteine proteinase activity, and a porphyrin-containing molecule in such as heme.

Abstract: The present invention relates to an anti-microbial polypeptide and a DNA construct encoding said anti-microbial polypeptide and the use of said anti-microbial polypeptide.

Abstract: The invention relates to an antibiotic substance of microbial origin, arbitrarily denominated antibiotic 107891 which is produced by fermentation of Microbispora sp. ATCC PTA-5024, the pharmaceutically acceptable salts and compositions thereof, and their use as an antibacterial agent having inhibitory activity versus susceptible microbes. Antibiotic 107891, which is a complex comprising two Factors, denominated Factors A1 and A2, has a peptide structure containing lanthionine and methyllanthionine as constituents which are typical characteristics of the antibiotics of the lantibiotics group. Antibiotic 107891 and its Factors A1 and A2 show a good antibacterial activity against Gram-positive bacteria including methicillin resistant and vancomycin resistant strains, and is active also against some Gram-negative bacteria such as M. catharralis, Neisseria species and H. influenzae and Mycobacteria.

Abstract: Maurocalcine, a novel toxin isolated from the venom of the Tunisian chactidae scorpion Scorpio maurus palmatus, has the amino acid sequence GDCLPHLKLCKENKDCCSKKCKRRGTNIEKRCR (SEQ. ID. No. 1). It potently and reversibly modifies channel gating behaviour of type 1 ryanodine receptor (RyR1) by inducing prominent subconductance behavior. Maurocalcine and its bioactive structural analogues—preferably those containing the KKCKRR motif corresponding to part of the II-III loop of the alpha1S subunit of the voltage-dependent skeletal muscle calcium channel dihydropyridine receptor—appear to possess a therapeutic potential, notably as candidate immuno-suppressive drugs, and for the treatment of pathologies in humans that may involve a dysfunction of calcium channels.

Abstract: The present invention provides methods of treating cerebral ischemia in mammals comprising inducing hypothermia in a mammal before, during, or following cerebral ischemia in the mammal. The hypothermia is induced by administering to the mammal an effective dose of a neurotensin analog that is capable of crossing the blood-brain barrier and that comprises neo-tryptophan.

Abstract: Pure peptide products, derived from either human glioma cell line U-105MG or human peripheral blood mononuclear leukocytes are provided; the products have a molecular mass of about 8,400 daltons, and the products exhibit optimal monocyte chemotactic activity at a concentration of 1 nM. The cloning of full length cDNA for the peptide products is also provided, as well as recombinant methods for the production of monocyte chemoattractant products. Methods of treating infection and neoplasms in a human body with such peptides and monocyte chemoattractant products are additionally provided, as well as pharmaceutical compositions for the same.

Abstract: Methods of suppressing the activation of microglial cells in the Central Nervous System (CNS), methods of ameliorating or treating the neurological effects of cerebral ischemia or cerebral inflammation, and methods of combating specific diseases that affect the CNS by administering a compound that binds to microglial receptors and prevents or reduces microglial activation are described. Also described are methods of screening compounds for the ability to suppress or reduce microglial activation.

Abstract: 2-Substituted-5?-O-(1-boranotriphosphate)adenosine derivatives having at position 2 a radical R1 selected from the group consisting of H; halogen; O-hydrocarbyl; S-hydrocarbyl; NR3R4; and hydrocarbyl optionally substituted by halogen, CN, SCN, NO2, OR3, SR3 or NR3R4; wherein R3 and R4 are each independently H or hydrocarbyl or R3 and R4 together with the nitrogen atom to which they are attached form a saturated or unsaturated heterocyclic ring optionally containing 1-2 further heteroatoms selected from oxygen, nitrogen and sulfur, and pharmaceutically acceptable salts or diastereoisomers thereof or a mixture of diastereoisomers, are useful for treatment of type 2 diabetes.

Abstract: The invention features a non-transgenic model of Alzheimer's Disease, method for inducing prolonged in vivo gene expression in a mammal, and methods of inhibiting Alzheimer's Disease-associated neuronal cell death.

Abstract: The present invention relates to the use of GABAB receptor agonists for the treatment as well as the prevention of cough.

Abstract: This invention relates to novel compounds which are thyroid receptor ligands, preferably antagonists, and to methods for using such compounds in the treatment of cardiac and metabolic disorders, such as cardiac arrhythmias, thyrotoxicosis, subclinical hyperthyrodism and liver diseases.

Abstract: The present invention relates to substituted bis-arylsulfonamide and arylsulfonamide compounds of the general formula (I) or the formula (II), which compounds are potentially useful for the prophylaxis and treatment of medical conditions relating to obesity, type II diabetes and/or disorders of the central nervous system

Abstract: The present invention relates to 1,3-dioxoisoindole derivatives of Formula (1) or pharmaceutically acceptable salts thereof, a preparation method thereof and use thereof as a T-type calcium channel antagonist, based on the fact that 1,3-dioxoisoindole derivatives of Formula (1) show selective antagonistic activity against T-type calcium channel, thus being effective in treating brain diseases, cardiac diseases and neurogenic pains: wherein R1 is a phenyl or a benzyl group, optionally substituted with a moiety selected from the group consisting of a halogen atom, a C1-C6 alkoxy, a C1-C6 alkyl, and a cyano group; R2 is a heterocyclic group selected from the group consisting of piperidinyl, pyrrolidinyl, morpholinyl, and piperazinyl groups, wherein the heterocyclic group is optionally substituted with a C1-C6 alkyl group; and n is 1 or 2.

Abstract: The invention relates to compounds of formula wherein the substituents are described herein. The compounds may be used in the treatment of illnesses based on the glycine uptake inhibitor, such as psychoses, pain, neurodegenerative disfunction in memory and learning, schizophrenia, dementia and other diseases in which cognitive processes are impaired, such as attention deficit disorders or Alzheimer's disease.

Abstract: Compounds provided herein are novel substituted pyrazinones, pyridines and pyrimidines of Formula (I) and (II): Such compounds are particularly useful as CRF receptor ligands, and hence, in the treatment of various neurologically-related disorders such as affective disorder, anxiety and depression.

Abstract: The present invention relates to compounds of formula I wherein R1 is as defined in the specification and to esters thereof which are hydrolyzable under physiological conditions and to the pharmaceutically acceptable salts thereof. The compounds of the invention are inhibitors of COMT and, thus, are useful for the treatment of diseases for which COMT inhibition is beneficial. The invention further relates to the treatment, control, or prevention of diseases such as depression, schizophrenia, Parkinson's disease, and to improve cognition.

Abstract: The present invention relates to 2,6,7-substituted pyrrolo[2,3-d]pyrimidines which inhibit the extracellular release of inflammatory cytokines, said cytokines responsible for one or more human or higher mammalian disease states. The present invention further relates to compositions comprising said 2,6,7-substituted pyrrolo[2,3-d]pyrimidines and methods for preventing, abating, or otherwise controlling enzymes which are understood to be the active components responsible for the herein described disease states.

Abstract: This invention relates to compounds having pharmacological activity, to compositions containing these compounds, and to a method of treatment employing the compounds and compositions. More particularly, this invention concerns certain non-imidazole tertiary amine derivatives and their salts and solvates. These compounds have H3 histamine receptor antagonist activity. This invention also relates to pharmaceutical compositions containing these compounds and to a method of treating disorders in which histamine H3 receptor blockade is beneficial.

Abstract: Compounds of formula (1) or a pharmaceutically acceptable salt, solvate, acid isostere, or hydrolyzable ester thereof, are disclosed. Methods of making and using the compounds are also disclosed.

Abstract: The invention provides compounds of the invention pharmaceutical compositions comprising a compound of the invention, processes for preparing compounds of the invention, intermediates useful for preparing compounds of the invention, and therapeutic methods for treating cancer and other topoisomerase mediated conditions.

Abstract: Compounds of formula I pharmaceutical compositions of these compounds, and use of said compositions to control synaptic transmission in mammals.

Abstract: The present invention is directed to novel 1,2,4-thiadiazol-2-ium derivatives useful as agonists or antagonists of the melanocortin receptor. More particularly, the compounds of the present invention are useful for the treatment of metabolic, CNS and dermatological disorders such as obesity, impaired oral glucose tolerance, elevated blood glucose levels, type II diabetes, Syndrome X, diabetic retinopathy, spinal cord injury, nerve injury, acute neurodegenerative disorders, chronic neurodegenerative disorders, plexopathies, male erectile dysfunction, dry eyes, acne, dry skin, aged skin, seborrheic dermatitis, rosacea, excessive ear wax, meibomian gland disorder, pseudofolliculitis, yeast infections, dandruff, hidradenitis suppurativa, ocular rosacea and eccrine gland disorder.

Abstract: The invention relates to substituted aryl-substituted heterocycles and to the physiologically tolerated salts and physiologically functional derivatives thereof, to process for their preparation and to their use as medicaments. Compounds of the Formula I in which the radicals have the stated meanings, the N-oxides thereof, and the physiologically tolerated salts thereof, and process for the preparation thereof are described. The compounds bring about for example a weight reduction in mammals and are suitable for example for the prevention and treatment of obesity and diabetes.