Abstract: A manual control mechanism for a heating unit of a domestic cooker (1) having a front face is in the form of a twist grip (11, 12, 13) operable by rotation about a substantially horizontal axis parallel to the front face of the cooker. A plurality of such control mechanisms are provided in a rail (7) mounted on the front of the cooker.

Abstract: A manufacturing method for an image heating apparatus for heating an image on a recording material by a heat from a heat generating element for producing heat by a magnetic flux generated by magnetic flux generating means, the apparatus including a magnetic flux confining member for confining a magnetic flux directing toward a predetermined region of the heat generating element from the magnetic flux generating means, and a first drive transmission member, provided at one end of the magnetic flux confining member, for transmitting rotational drive to the magnetic flux confining member and a second drive transmission member, provided at the other end of the magnetic flux confining member, for transmitting rotational drive to the magnetic flux confining member, the method comprising an adjusting step of adjusting such that first and second drive transmission members are supported by the magnetic flux confining member with a predetermined rotational position relation, using marks provided on the first and second

Abstract: A cooking utensil with bottom wall adapted for induction heating, is provided. The cooking utensil includes a container made from a first material that has attached to the outside of its bottom wall a heat distributing plate made from a second, different, heat conducting material, the outer surface having a series of spaced projections with the heat distributing plate being made up of a disc produced from ferromagnetic material provided with a number of perforations equivalent to the number of projections and appropriately distributed to allow the engagement of the disc, backed onto the bottom wall, by inserting the projections through the perforations, leaving the disc joined to the bottom wall by riveting the projections.

Abstract: A non-invasive microwave analysis system determines scattered phase and/or amplitude data for a liquid in a container. A tank holds coupling liquid; the system includes a membrane for separating the liquid container from the coupling liquid. A transmitter antenna situated within the coupling liquid transmits microwaves. One or more receiver antennas within the coupling liquid convert microwave radiation that scatters from the liquid in the container into microwave electronic signals. Electronics process the microwave electronic signals to determine scattered phase and/or amplitude values of the microwave radiation.

Abstract: Indentation patterns in microwave packaging materials can enhance the baking and browning effects of the microwave packaging materials on food. The indentation patterns can provide venting to either channel moisture from one area of the food product to another, trap moisture in a certain area to prevent it from escaping, or channel the moisture completely away from the food product. The indentation patterns can cause the microwave packaging material underneath a food product to be slightly elevated above the cooking platform in the base of a microwave. The indentation patterns can lessen the heat sinking effect of the cooking platform by providing an air gap for insulation. Elevating the base of the microwave packaging material further allows more incident microwave radiation to propagate underneath the microwave packaging material to be absorbed by the food product or by microwave interactive materials in the microwave packaging material that augment the heating process.

Abstract: A door structure of a microwave oven usable as a pizza oven, wherein a pan is coupled to an inner surface of the door such that the pan is integral with the door, and a handle is mounted to an outer surface of the door. The handle has various structures so that the handle is separable from the door or is hingably mounted to the door to move between a folded state and an unfolded state. The door structure, may be configured to simultaneously open the door and eject the pan. The user can stably open and close the pizza oven door, using only a handle, under the condition in which the pizza oven door and pizza tray are not supported. The handle has a structure capable of effectively supporting the weight of the oven door while having a foldable structure so that the handle can be conveniently used.

Abstract: A door structure of a microwave oven usable as a pizza oven, wherein a pan is coupled to an inner surface of the door such that the pan is integral with the door, and a handle is mounted to an outer surface of the door. The handle has various structures so that the handle is separable from the door or is hingably mounted to the door to move between a folded state and an unfolded state. The door structure may be configured to simultaneously open the door and eject the pan. The user can stably open and close the pizza oven door, using only a handle, under the condition in which the pizza oven door and pizza tray are not supported. The handle has a structure capable of effectively supporting the weight of the oven door while having a foldable structure so that the handle can be conveniently used.

Abstract: A first prism 11a and a second prism 12a are joined together on a face-to-face basis. A dichroic mirror 13a is interposed into the junction plane to reflect only G-light. A first imaging device 111a receives the reflected light (G-light) with high sensitivity. In this manner, there is constructed an inexpensive light receiving unit 10a having the same visual sensitivity characteristic as eyes of a person. The light receiving unit 10a is disposed in an image taking apparatus.

Abstract: A semiconductor image sensor module and a method for manufacturing thereof as well as a camera and a method for manufacturing thereof are provided in which a semiconductor image sensor chip and an image signal processing chip are connected with a minimum parasitic resistance and parasitic capacity and efficient heat dissipation of the image signal processing chip and shielding of light are simultaneously obtained.

Abstract: A binning circuit and related method, wherein pixel signals from column circuits in a sensor circuit are sampled and interpolated. The binning circuit samples analog pixel and reset signals from different sensor circuit column lines. Once a predetermined number of column lines are sampled in the binning circuit, the sampled pixel signals are averaged together in one operation, while the reset signals are averaged together in another operation.

Abstract: The application disclose a system for handling light that is amenable for intensification by an Image Intensifier and a method for handling the same, wherein the system includes light regulating means for regulating light intensity of the transmissive MEMS (Micro Electro Mechanical System) type in order to prevent light rays emanating from intensely bright light areas from reaching the input plane of the image intensifier, or (instead of using said transmissive MEMS), the system implement light regulating means of the reflective MEMS type and while utilizing the reflective MEMS, the image intensifier is driven to operate in a gating mode, in order to time the light intensifying action of the intensifier to start upon the specific time slot that was essentially completed, of deflecting the light rays emanating from intensely bright light areas away from the input plane of said image intensifier.

Abstract: A trans-impedance amplifier receives an input current and is operable to generate an output voltage responsive to the input current. The amplifier is responsive to an increased range of input currents and has a wide bandwidth. The amplifier includes an input stage having a first and a second transistor and is configured to receive the input current. The amplifier includes an output stage coupled to the input stage and having a third and a fourth transistor. A variable resistor is coupled to the output stage to adjust the amount of current in the output stage. A variable current source is coupled to the output stage and is operable to adjust the amount of current in the output stage. A output driver, which is coupled to the output stage, includes at least another transistor. The output driver is operable to provide the output voltage and is operable to reduce the output impedance of the amplifier.

Abstract: A signal-detecting light-receiving device formed as an integrated circuit, which receives a light beam reflected from an optical recording medium, and which outputs a signal obtained from the received reflected light beam, through a current-output-type current amplifier circuit. The light-receiving device includes the following components: at least one resistor configured as a part of the integrated circuit, the at least one resistor being an output resistor used as a termination resistor for an output terminal of the light-receiving device, the output terminal being connected to an output of the current amplifier circuit; and a selecting circuit configured as a part of the integrated circuit, which controls the at least one resistor so as to enable/disable connection of the at least one resistor to the output terminal of the light-receiving device.

Abstract: A linear trap which allows for charge separation and ion mobility separation in a speedy manner, and enables measurement with high duty cycle. A mass spectrometer comprises an ion source, an ion trap for trapping ions ionized by the ion source, an ion trap controller for controlling a voltage on an electrode included in the ion trap, and a detector for detecting the ions ejected from the ion trap. The ion trap controller includes a table for each mass-to-charge ratio, the table containing a frequency of the voltage used for charge separation, and a gain of the voltage for ejecting a first ion with a first charge outside the ion trap, and retaining in the ion trap a second group of ions with a second charge that is lower than that of the first charge. The ion trap controller controls the voltage based on the mass-to-charge ratio set. The mass spectrometer has significantly improved sensitivity, as compared to the prior art.

Abstract: Method and apparatus for characterizing a recess located on a surface of a substrate are provided. One embodiment of the invention provides a method for characterizing a recess located on a surface of a substrate. In a first step, a measurement tip is positioned directly above the recess. Subsequently, an electrically conductive path is provided between the measurement tip and the bottom of the recess by ionizing a medium located in the recess. A voltage is applied between the measurement tip and the substrate to measure a current flowing between the measurement tip and the bottom of the recess. The recess is characterized on the basis of the magnitude of the measured current. Another embodiment of the invention provides an apparatus for performing the method for characterizing a recess.

Abstract: Provided are a semiconductor probe with a resistive tip, and a method of fabricating the semiconductor probe.

Abstract: A transmission electron microscope has a means for inputting a spatial size or distance d desired to be observed by the operator, calculates high contrast of an image based on this value and an observing condition which can reduce the influence of a false image superimposed, and desirably modulates an accelerating voltage of the electron microscope based thereon.

Abstract: An infrared night vision camera apparatus includes a casing unit delimiting a first compartment and a second compartment separated from the first compartment, a light source module mounted in the first compartment, a shooting module mounted in the first compartment, and a power supply unit mounted in the second compartment. The casing unit further includes a through-hole for communicating the first compartment with the second compartment. The power supply unit includes a power line and a signal line extending through the through-hole. The power line is electrically connected and supplies power to the light source module and the shooting module. The signal line is electrically connected to the shooting module. Heat generated by the power supply unit and moisture in the second compartment are prevented from entering the first compartment.

Abstract: A cryogenic detector device includes a sensor based on a low-temperature effect and measures the temperature increase produced by the introduction of energy, such as an X-ray quantum. The smaller the thermal capacity of the sensor, the greater the temperature increase resulting from the introduction of energy and the higher the energy resolution of the sensor. Because the thermal capacity is temperature dependent, the sensor is operated in the range of comparatively small thermal capacities, i.e., in a range between 50 and 400 mK. Contrary to conventional assumptions, it was found that by keeping the three-dimensional size of the individual sensors sufficiently small and by increasing the effective sensor area, acceptable measurement results were achieved even at higher operating temperatures of the sensors in a range between 2.4 and 4.2 degrees Kelvin.

Abstract: A passive infra-red detector including at least three sub-detectors, each sub-detector being operative to receive infra-red radiation from a corresponding one of at least three sub fields-of-view, each sub field-of-view being exclusively defined by an optical element which does not define any other sub field of view, the sub fields-of-view being angled with respect to each other, adjacent ones of the sub fields-of-view being separated by a gap of no more than 30 degrees and at least one of the sub fields-of-view having at least one of the following characteristics: extending over no more then 45 degrees in azimuth; and including not more than three azimuthally distributed detection zones, and signal processing circuitry, operative to receive output signals from the sub detectors and to provide a motion detection output.

Abstract: Disclosed are apparatus and methods for illuminating a sample, e.g., during an inspection of such sample for defects. In one aspect, the illumination apparatus includes a bundle of fibers that each has a first end and a second end. The illumination apparatus further includes an illumination selector for selectively transmitting one or more incident beams into one or more corresponding first ends of the optical fibers so that the selected one or more incident beams are output from one or more corresponding second ends of the fibers. The illumination apparatus also includes a lens arrangement for receiving the selected one or more incidents beams output from the corresponding one or more second ends of the fibers and directing the selected one or more incident beams towards the sample. The lens arrangement and the fibers are arranged with respect to each other so as to image an imaging plane of the sample at the second ends of the fibers. In one aspect, the incident beams are laser beams.

Abstract: An apparatus and method for disinfecting a cryostat is provided. The cryostat disinfecting device comprises an ultraviolet emitter, a pulsed power control system, a mirrored cover and a safety shield. The device is lowered into a cryostat chamber and produces high intensity pulsed UV energy, disinfecting the cryostat chamber. After disinfection, the device is removed from the cryostat for storage or use on another cryostat. This provides mobility and access for disinfecting cryostats under continuous daily use conditions, and reduces the exposure risk of biological and chemical hazards to the operator.

Abstract: A particle beam therapy system transports an ion beam emitted from an accelerator to one of a plurality of treatment rooms. When preparations for irradiation of the ion beam to patients in the plurality of treatment rooms are completed, irradiation ready signals are outputted from treatment (operator) consoles provided respectively in the treatment rooms. A first-come, first-served basis controller decides the sequence of introducing the ion beam to the treatment rooms based on the order in which the respective irradiation ready signals have been inputted. Beam paths for introducing the ion beam emitted from the accelerator to respective irradiation units in the treatment rooms are formed in accordance with the decided sequence.

Abstract: An opto-coupler interface is provided. The opto-coupler interface includes a current mirror and a resistor. The opto-coupler interface is arranged such that a relatively fixed voltage is provided across the photodetector. At one end of the photodetector, the voltage is relatively fixed because the photodetector is coupled to the input of a current mirror. Because the voltage across the opto-coupler is relative fixed, the opto-coupler interface is a current interface rather than a voltage interface. Current from the photodetector is mirrored by the current mirror to provide an output mirror current. The output mirror current is provided to a resistor such that the resistor provides a voltage that is based on the output mirror current.

Abstract: Apparatus that invention detects and characterizes hard or metallic materials or objects, worn or carried by persons or concealed on their persons or in bags or luggage, using directed or propagated energy such as ultrasound or microwave, that is reflected or scattered by the materials and objects of interest and that has a wavelength or wavelengths such that the width and/or shape of the reflected beam can be measured at the desired detection distance or range of distances and has a measurable dependence on the size and/or shape of the object, utilizing diffraction methods. Also disclosed are a system and a method utilizing this apparatus.

Abstract: Structural noise is accurately removed by a radiographic image correcting apparatus. A correction image data set, generated from a reference image data set obtained from a stimulable phosphor sheet onto which radiation has been uniformly irradiated, that includes at least four times the amount of structural noise compared to quantum noise, is recorded in a memory means. A correcting means corrects a radiographic image data set, employing the correction image data set recorded in the memory means.

Abstract: A nonvolatile, resistively switching memory cell has a layer of a porous dielectric between a first electrode. The dielectric is not a chalcogenide.

Abstract: It is an object to provide technique for forming a further minute gate electrode in a semiconductor integrated circuit. According to the present invention, a conductive film is etched while a resist mask is made to recede so as to make a cross section of a gate wiring have a trapezoidal shape having a width capable of being electrically connected to an upper layer wiring and make a cross section of a gate electrode, which diverges from a gate wiring, have a shape comprising only three interior angles, typically a triangular shape; and thus, a gate width of 1 ?m or less is realized. According to the invention, increase of ON current is realized and a circuit operating at high speed (typically, a CMOS circuit or an NMOS circuit) can be obtained.

Abstract: A thin film transistor array substrate and a manufacturing method thereof are provided. Wherein, scan lines and data lines are disposed on a substrate to define a plurality of pixel regions. Thin film transistors are disposed in the pixel regions correspondingly and driven by the scan lines and the data lines. Pixel electrodes are disposed in the pixel regions respectively and electrically connected to the corresponding thin film transistors. In addition, a gate insulating layer is disposed on the substrate to cover the scan lines and gates of the thin film transistors. A patterned leaning layer is disposed on the gate insulating layer and forms a plurality of non-continuous patterns under the data lines. The non-continuous patterns expose portions of the gate insulating layer under the data lines to which a portion of each data line can be directly attached.

Abstract: An object of the present invention is to provide an active matrix type display unit having a pixel structure in which a pixel electrode formed in a pixel portion a scanning line (gate line) and a data line are suitably arranged, and high numerical aperture is realized without increasing the number of masks and the number of processes. In this display unit, a first wiring arranged between a semiconductor film and a substrate through a first insulating film is overlapped with this semiconductor film and is used as a light interrupting film. Further, a second insulating film used as a gate insulating film is formed on the semiconductor film. A gate electrode and a second wiring are formed on the second insulating film. The first and second wirings cross each other through the first and second insulating films. A third insulating film is formed as an interlayer insulating film on the second wiring, and a pixel electrode is formed on this third insulating film.

Abstract: The present invention provides the substrate for a display device, comprising a scan line, a signal line and a switching element on an insulating substrate, and further comprising an interlayer insulation film and a pixel electrode, the switching element is provided at an intersection of the scan line and the signal line, and have a gate electrode connected to the scan line, a source electrode connected to the signal line, and a drain electrode connected to the pixel electrode, the interlayer insulation film has a contact hole for connecting the drain electrode of the switching element to the pixel electrode, and a protective layer is provided above the scan line and/or the signal line in the substrate for a display device.

Abstract: An array substrate includes a transparent substrate, a switching element, an insulating layer and a pixel electrode. The switching element includes a gate electrode formed on the transparent substrate and connected to a gate line, a channel layer formed on the gate electrode and extended in a first direction, a source electrode formed on the transparent substrate and connected to a source line and a drain electrode formed on the channel layer to cover the channel layer. The insulating layer has a contact hole to partially expose the drain electrode and the transparent substrate. The pixel electrode is connected to the drain electrode through the contact hole. When the above array substrate is employed in a liquid crystal display panel, the array substrate reduces pixel defect.

Abstract: There are provided a surface emitting device and a projection display device, in which high power output can be produced by configuring a large-scaled LED. The surface emitting device includes a plurality of stacked light emitting elements provided on one module. Each of the stacked light emitting elements includes n-type layers, light emitting layers and p-type layers, which are formed in sequence.

Abstract: A microlens substrate is provided having a plurality of first microlenses and a plurality of second microlenses which are located between the plurality of first microlenses. The second microlenses are smaller than the first microlenses.

Abstract: A flat panel display includes a pixel electrode having an opening portion formed on an insulating substrate, a semiconductor layer formed over a surface of the insulating substrate, spaced apart from the pixel electrode, having source and drain regions formed to both end portions thereof, a first insulating layer formed over the surface of the insulating substrate excluding the opening portion of the pixel electrode, a gate electrode formed on the first insulating layer over the semiconductor layer, and a second insulating layer formed over the surface of the insulating substrate excluding the opening portion of the pixel electrode. The present invention provides an organic EL display manufactured with reduced mask processes which has excellent electrical characteristics and improved light transmittance.

Abstract: A lens assembly for sideward light emission includes a lens and a lens cap. The lens has a cup portion, an open end portion, and first and second refracting portions. The cup portion surrounds a light source. The open end portion defines an opening. The first refracting portion interconnects the cup portion and the open end portion. The second refracting portion is disposed in the lens and is formed on the first refracting portion. The lens cap is mounted to the open end portion of the lens for covering the opening.

Abstract: A radiation-emitting semiconductor component, comprising a semiconductor body which emits a primary light, a luminescent conversion element which emits fluorescent light, in which the luminescent conversion element comprises a suspension of a luminous substance in a matrix material, wherein the luminescent conversion element is in direct contact with a part of the surface of said semiconductor body, and wherein the fluorescent light emitted from said luminescent conversion element is approximately half the total emission of the light of the radiation-emitting semiconductor component.

Abstract: A lighting apparatus comprising at least one light emitting diode is disposed on an interconnect board to emit ultraviolet or blue radiation. A polymeric layer including a luminophor is disposed about the lighting apparatus to convert at least a portion of the radiation emitted from the LED into visible light. The polymeric layer is shrinkable to conform to a shape enclosing the light emitting diode.

Abstract: An LED chip comprising an electrically conductive and radioparent substrate, in which the epitaxial layer sequence (3) is provided on substantially the full area of its p-side (9) with a reflective, bondable p-contact layer (6). The substrate (2) is provided on its main surface (10) facing away from the epitaxial layer sequence (3) with a contact metallization (7) that covers only a portion of said main surface (10), and the decoupling of light from the chip (1) takes place via a bare region of the main surface (10) of the substrate (2) and via the chip sides (14). A further LED chip has epitaxial layers only.

Abstract: The present invention discloses a high brightness light emitting diode. The light emitting diode primarily includes a permanent substrate, a reflective mirror formed on said permanent substrate, an n-type cladding layer formed on said reflective mirror, and defining a higher port and a lower port on an upper surface thereof, an active layer with quantum well structure formed on said higher port of said n-type cladding layer, a p-type cladding layer formed on said active layer, a p-GaP layer formed on said p-type cladding layer, a metal contact layer formed on said GaP layer, a p-type ohmic contact electrode formed on said metal contact layer, and an n-type ohmic contact electrode formed on said lower port of said n-type cladding layer. By providing a gallium phosphide window and a reflective mirror, brightness of the LED can be promoted.

Abstract: A light emitting element has a substrate of gallium oxides and a pn-junction formed on the substrate. The substrate is of gallium oxides represented by: (AlXInYGa(1?X?Y))2O3 where 0?x?1, 0?y?1 and 0?x+y?1. The pn-junction has first conductivity type substrate, and GaN system compound semiconductor thin film of second conductivity type opposite to the first conductivity type.

Abstract: A method for producing a semiconductor component has the following step: the front side (101) of the semiconductor body (100) is irradiated with high-energy particles using the terminal electrode (40) as a mask, in order to produce recombination centres (80A, 80B) in the semiconductor body (100) for the recombination of the first and second conduction type of charge carriers.

Abstract: A bipolar transistor formed in a substrate includes a collector, a base layer above the collector, where the base layer includes a base that is monocrystalline, and an emitter layer that is monocrystalline and above the base, where the emitter layer includes silicon or silicon-germanium. An intermediate layer is above the base layer and below the emitter layer. The intermediate layer includes silicon carbide. The intermediate layer is grown epitaxially and is etchable in a dry plasma relative to the emitter layer.

Abstract: Methods for forming a wire from silicon or other semiconductor material are disclosed. Also disclosed are various devices including such a semiconductor wire. According to one embodiment, a wire is spaced apart from an underlying substrate, and the wire extends between a first end and an opposing second end, each of the first and second ends being affixed to the substrate. Other embodiments are described and claimed.

Abstract: A configuration memory cell (“CRAM”) for a field programmable gate array (“FPGA”) integrated circuit (“IC”) device is given increased resistance to single event upset (“SEU”). A portion of the gate structure of the input node of the CRAM is increased in size relative to the nominal size of the remainder of the gate structure. Part of the enlarged gate structure is located capacitively adjacent to an N-well region of the IC, and another part is located capacitively adjacent to a P-well region of the IC. This arrangement gives the input node increased capacitance to resist SEU, regardless of the logical level of the input node. The invention is also applicable to any node of any type of memory cell for which increased resistance to SEU is desired.

Abstract: A semiconductor device having resistors in a peripheral area and fabrication method thereof are provided. A mold layer is formed on a semiconductor substrate. The mold layer is patterned to form first molding holes and a second molding hole in the mold layer. A storage node layer is formed on the mold layer as well as in the first and second molding holes. The storage node layer is patterned to form storage nodes in the first molding holes and a portion of a resistor in the second hole.

Abstract: A semiconductor device including a transistor and a method of forming thereof are provided. The semiconductor device comprises a metal gate electrode. A lower portion of the metal gate electrode fills a channel trench formed at a predetermined region of a substrate, and an upper portion of the metal gate electrode protrudes on the substrate. A gate insulating layer is interposed between inner sidewalls and a bottom surface of the channel trench, and the metal gate electrode. Source/drain regions are formed at the substrate in both sides of the metal gate electrode.

Abstract: A field effect transistor (FET) includes a plurality of trenches extending into a semiconductor region. Each trench includes a gate electrode and a shield electrode with an inter-electrode dielectric therebetween. The trench extends in an active region of the FET, and the shield electrode and gate electrode extend out of the trench and into a non-active region of the FET where the shield electrode and gate electrode are electrically connected together by a first interconnect layer.

Abstract: A power semiconductor device includes trenches disposed in a first base layer of a first conductivity type at intervals to partition main and dummy cells, at a position remote from a collector layer of a second conductivity type. In the main cell, a second base layer of the second conductivity type, and an emitter layer of the first conductivity type are disposed. In the dummy cell, a buffer layer of the second conductivity type is disposed. A gate electrode is disposed, through a gate insulating film, in a trench adjacent to the main cell. A buffer resistor having an infinitely large resistance value is inserted between the buffer layer and emitter electrode. The dummy cell is provided with an inhibiting structure to reduce carriers of the second conductivity type to flow to and accumulate in the buffer layer from the collector layer.

Abstract: A semiconductor-on-insulator device includes a silicon active layer with a <100> crystal direction placed over an insulator layer. The insulator layer is placed onto a substrate with a <110> crystal direction. Transistors oriented on a <100> direction are formed on the silicon active layer.