Abstract: A semiconductor memory device includes a memory cell array, bit lines, a source line, a sense amplifier, a data buffer, a voltage generating circuit, and a control circuit, the control circuit being configured such that the control circuit writes batchwise the write data, in the plurality of memory cells of the bit lines, the control circuit, after the batchwise write, causes the plurality of first latch circuits to hold the write data once again, and the control circuit executes verify read from the memory cells, and executes, in a case where read data of the plurality of sense amplifier circuits by the verify read disagree with the write data that are held once again in the plurality of first latch circuits, additional write to write batchwise the held write data in the plurality of memory cells once again.

Abstract: A method for determing the logic state of a memory cell of an array is provided. The array includes many word lines and bit lines. The method proceeds with the following steps. Firstly, a first voltage varing according to a sensing parasitic resistance of the memory cell is applied to the memory cell for a cell current. Next, a second voltage is applied to a reference cell corresponding to the memory cell for a reference current. Then, the cell current is compared with the reference current so as to determine the logic state of the memory cell.

Abstract: A flash memory device and related method of operation are provided. The device generally comprises a word line voltage generator circuit configured to generate a word line voltage based on incremental step pulse programming; and a word line voltage controller circuit that controls the word line voltage generator circuit so that either the unit program time or the increment size of the word line voltage is varied according to the number of program data bits among the set of input data bits that the device will store in memory cells.

Abstract: A memory device is provided including memory cells that are capable of switching between at least two states, where the threshold of a sense signal for detecting the current state depends on a data content of the memory cell. Parallel to a user data block, a primary control word including a predetermined number of bits of a first state is stored in a check section of the cell array. The check section is read by applying sense signals of different amplitudes, where in each case a secondary control word is obtained. By checking in each secondary control word the number of bits of the first state, the margins of the current sense signal amplitude towards the sense window limits may be checked and the sense signal amplitude may be adapted permanently to a sense window drift, so as to enhance the reliability of the memory device.

Abstract: A method for reading a memory array is disclosed. The method includes turning on the column of select gates; preprogramming a first right floating gate to a high threshold and a first left floating gate coupled to a same first word line as the first right floating gate to a low threshold; charging a voltage of the right data line to a first predetermined value; charging a voltage of the first word line to a second predetermined value which is between the high threshold of the first right floating gate and the low threshold of the first left floating gate; charging a voltage of a second word line coupled to a second right floating gate to a third predetermined value; and comparing a current of the left data line with a fourth predetermined value.

Abstract: A non-volatile memory device that has a cache register coupled between each pair of bit lines and, in one embodiment, a data cache coupled between each pair of bit lines. The cache register toggles a bit when a memory cell on one of the bit lines to which it is coupled is successfully programmed. The set bit inhibits further programming on that bit line. The data cache is programmed with the original data to be programmed in the particular memory cell coupled to the respective bit line. A programming method performs a programming/verification operation until the memory cell is programmed. The data cache is then read and this data is used in a secondary programming operation, after the initial programming/verification operation, on the same memory cells.

Abstract: A memory system includes a host, a flash memory that is configured to store multi-bit data in one memory cell, and a memory controller that is configured to control programming of multi-bit data provided by the host into the flash memory. When an nth bit is normally programmed, and a fail occurs in programming an n+1th bit in the flash memory, a memory block of the flash memory including a fail cell is operated in an operation mode of the nth or lesser bit. Related memory systems and methods are also provided.

Abstract: A semiconductor memory device includes a memory cell array, first bit lines, second bit lines, a first precharge circuit, a sense amplifier, and a read control circuit. The memory cell array has a first cell array including first memory cells arranged in a matrix and a second cell array including second memory cells. The first bit line electrically connects the first memory cells in a same column. The second bit line electrically connects the second memory cells in a same column. The first precharge circuit precharges the first bit lines in a read operation. The sense amplifier amplifies the data read from the first memory cells in a read operation. The read control circuit precharges and discharges the second bit lines in a read operation and, on the basis of the time required to precharge and discharge the second bit lines, controls the first precharge circuit and the sense amplifier.

Abstract: A semiconductor memory device includes a memory cell array including a plurality of memory cell transistors, an X decoder designating a position of an X axis of the memory cell, a Y decoder designating a position of a Y axis crossing the X axis, a controller collectively controlling operations of read, write and erase of the memory cell transistors via the X decoder and the Y decoder, a semiconductor time switch generating an output signal after a predetermined life time elapses without a power source, and a refresh trigger circuit receiving the output signal from the semiconductor time switch, and giving the controller instructions to transfer information stored in one area of the memory cell array to other area thereof to refresh the information.

Abstract: A memory system includes: a flash memory that stores data; a memory that stores a read count table that indicates the number of times of data read from the flash memory; and a controller that performs: reading out the data from the flash memory; updating the read count table when the controller performs reading out the data from the flash memory; and refreshing the flash memory based on the read count table.

Abstract: In a memory cell array, a plurality of memory cells connected to word lines and bit lines are arranged in a matrix. A control circuit controls the potentials of the word lines and bit lines. The control circuit, when reading data from the memory cell connected to a first one of the bit lines, supplies a first voltage to a second bit line provided next to the first bit line and to a source line of the memory cell array.

Abstract: The apparatus, systems, and methods described herein may operate to receive an external erase command at a control circuit coupled to an erasable memory array located on a substrate. A global select gate voltage may thereafter be enabled for application to wordline transistors coupled to the erasable memory array after a voltage applied to the substrate has reached a preselected initiation voltage level between about zero volts and an ultimate erase voltage.

Abstract: A memory module including memory devices, a spare memory device, a multiplexing unit, and a memory buffer is provided. The multiplexing unit is coupled with each of the memory devices and the spare memory device, while the memory buffer is coupled with the multiplexing unit. The memory buffer includes a serial interface over which commands are received from a memory controller. The memory buffer is configured to process the commands and provide the memory controller access to the memory device through the multiplexing unit in response to the commands. Also, in response to at least one of the commands, the memory buffer is configured to direct the multiplexing unit to couple the spare memory device to the memory buffer in place of one of the memory devices for at least a next access of the memory devices.

Abstract: A semiconductor memory device is capable of simultaneously carrying out a first operation and a second operation. The semiconductor memory device includes first and second control circuits, a select control circuit, and a select circuit. The first control circuit controls the first operation according to a first address signal and outputs a read start signal when the reading of the data is started. The second control circuit controls the second operation according to a second address signal and outputs a sequence flag when the first and second addresses coincide with each other. The select control circuit generates a select control signal. The select control signal is asserted if the second operation is carried out. The first control circuit instructs the select circuit to select the sequence flag if the select control signal is asserted or the data if the select control signal is negated.

Abstract: A semiconductor memory device that includes an input buffer being inputted a write data from outside to buffer the write data and a control circuit putting the input buffer into an inactive state during a read operation and putting the input buffer into an active state when a read mask signal is inputted thereafter is provided.

Abstract: A low voltage sensing scheme reduces active power down standby leakage current in a memory device. During memory's active power down state, the leak current may increase because of the use of P and Nsense amplifiers having low threshold voltages (Vth) for low Vcc sensing of data signals. A clamping device or diode is used between a Psense amplifier control line (e.g. ACT) and Vcc and/or between an Nsense amplifier control line (e.g. RNL*) and Vss (ground potential). The clamping diode is not enabled during normal memory operations, but is turned on during active power down mode to reduce leakage current through ACT and/or RNL* nodes. The clamping device connected to the ACT node may reduce the voltage on the ACT line during power down mode, whereas the clamping device connected to the RNL* node may increase the voltage on the RNL* line during power down mode to reduce sense amplifier leakage current through these nodes.

Abstract: Word line driver circuitry for selectively charging and discharging one or more word lines is provided. The driver circuitry uses a dual transistor topology, where a first transistor is driven by a signal, DOUT, and a second transistor is driven by a time-delayed complement of the DOUT, DOUT_BAR. The time delay prevents DOUT_BAR from changing its state immediately after DOUT changes state. As result, both the first and second transistors are turned ON at the same time for a predetermined of time. It is during this time that the voltage on the word line is rapidly driven to a LOW voltage. When the second transistor turns OFF, high impedance circuitry limits the flow of leakage current. This minimizes leakage current when the word line is OFF and when short circuit conditions are present between two or more word lines or between a word line and a bit line.

Abstract: In a semiconductor memory device, with respect to low voltage application, technique of controlling a gate voltage of a shared MOS transistor increasing sense speed and increasing data read speed by preventing data inversion caused by noise and reducing bit line capacitance during sensing is provided. By a shared MOS transistor gate voltage control circuit connecting a sense amplifier and a memory cell array, a shared MOS transistor gate voltage (SHR) is lowered in two stages and bit line capacitance to be amplified is reduced taking noise during the sensing into consideration so that the sense speed is increased. Therefore, a timing of activating a column selection signal can be hastened and as a result, data read time can be reduced.

Abstract: An image memory, image memory system, and memory controller that are capable of efficiently accessing a rectangular area of two-dimensionally arrayed data are provided. The memory device has: a memory cell array that has a plurality of memory unit areas, each of which is selected by addresses; a plurality of input/output terminals; and an input/output unit provided between the memory cell array and the plurality of input/output terminals.

Abstract: Circuits and methods to minimize power required for sensing and precharge of DRAMs have been achieved. A control circuit ensures that during READ operations the duration of sensing of DRAM cell and precharging is kept to a minimum. A test DRAM cell is used to determine the exact time required for data sensing. Furthermore no precharging is performed during WRITE-operations. In case data is changing from “1” to “0” or vice versa data lines are inverted accordingly during WRITE operation.

Abstract: In a memory circuit, data from all cells along a selected word line is read. Then, the read data is written back to half-selected cells and new data is written to the selected cells in the next cycle. In cases where a READ bit line (RBL) and WRITE bit line (WBL) are decoupled, RBL and WBL can be accessed simultaneously. Hence, the WRITE in the n-th cycle can be delayed to the n+1-th cycle as far as there is no data hazard such as reading data from memory before correct data are actually written to memory. As a result, there is no bandwidth loss, although the latency of the WRITE operation increases. WRITE stability issues in previous configurations with decoupled RBL and WBL are thus addressed.

Abstract: A memory system, memory, and memory system command protocol are disclosed. Within the memory system, a memory controller communicates a command to the memory, the command being selected from a set of commands including a write command and a plurality of non-write commands. A Hamming distance value calculated between a digital value indicating the write command and a digital value indicating any one of the plurality of non-write commands is greater than 1.

Abstract: A data strobe synchronization circuit includes first and second logic circuits receiving global data strobe pulses and respective enable signal. A control circuit initially applies an enable signal to the first logic circuit so that the first logic circuit generates a first data strobe pulse responsive to each global data strobe pulse. The control circuit receives a write control signal. When the write control signal becomes active, the control circuit terminates the enable signal applied to the first logic circuit and applies an enable signal to the second logic circuit. The second logic circuit then generates a second data strobe pulse responsive to the next global data strobe pulse. The first and second data strobe pulses are used to latch a data signal in respective flip-flops. The data strobe pulses may latch the data signal in pairs of flip-flops on the leading and trailing edges of the data strobe pulses.

Abstract: Apparatus, systems, and methods described herein may operate to receive an external read command at a control circuit coupled to a memory array. Individual wordline activation may be delayed according to a delay period determined by a read level voltage magnitude associated with a plurality of memory cells included in the array.

Abstract: A system and are described as to adjusting voltages in a memory device, while the device is in sleep mode, to prevent or minimize voltage or current leakage of the device.

Abstract: A memory system including a random access memory (RAM) array and a corresponding redundant RAM array which stores information redundant to the RAM array, where a designed cell circuit topology of cells within the redundant RAM array differs from a designed cell circuit topology of cells within the RAM array. The redundant RAM array is selectively accessed when accessing the RAM array to store data to the redundant RAM array for failed cells of the RAM array.

Abstract: Systems and methods for a memory system capable of detection and repair of failures occurring during operation are disclosed. Embodiments of the present invention provide a memory system operable to detect an error at a memory cell of a memory and replace the failed memory cell. More specifically, in certain embodiments, a failure at a certain address of a memory may be detected during operation of the memory. This memory cell may then be replaced by a redundant memory cell. By replacing the failed memory cell the memory system may continue to be utilized without encountering subsequent errors due to the failed memory cell.

Abstract: A method of testing a semiconductor apparatus performs a function test of reading data from memory cells in SRAM by applying a potential lower than a GND potential to a backgate of an n-type MOS transistor with a drain connected with a storage node and a source connected with the GND potential. Then, the method performs a function test of reading data from memory cells by applying a potential higher than the GND potential to the backgate.

Abstract: A semiconductor memory device includes: a plurality of ports configured to perform a serial input/output (I/O) data communication with external devices; a plurality of banks configured to perform a parallel I/O data communication with the ports; a global data bus configured to transmit a signal between the banks and the ports; a test mode determiner configured to determine an operation mode of the semiconductor memory device by generating a test mode enable signal in response to a test mode control signal; a test I/O controller configured to transmit and receive a test signal with the ports in response to the test mode enable signal during a port test mode; and a plurality of selectors, each of which is configured to receive the test signal output from the corresponding port in series and feedback the test signal to the corresponding port.

Abstract: A method and system are described for a two step precharging of bitlines in a memory array. In the first step a partial precharge of the bitline is accomplished with a lower power supply, the second step completes the bitline precharge with the higher power supply. Since the higher power supply must ultimately supply the final bitline precharge voltage achieving a partial bitline precharge with a lower power supply will result in lower sram and system power.

Abstract: An integrated semiconductor memory contains a multiplicity of bit line pairs which each comprise a first bit line and a second bit line. Sense amplifiers are each coupled to one of the bit line pairs for evaluating a signal on the first and second bit lines. A data line pair coupled to at least one of the multiplicity of bit line pairs for outputting a datum is furthermore provided. A correction device is connected on the output side to the data line pair or to at least one bit line pair. The device is embodied for feeding a correction signal onto the line pair.

Abstract: Method and memory circuits capable of allowing M memory addresses of an N-port memory to be accessed concurrently, wherein N and M both are a natural number, and M is larger than N. Accordingly, a higher-order multi-port memory can be replaced by a lower-order multi-port or single-port memory. Consequently, smaller chip area or higher data access rate can be achieved.

Abstract: A semiconductor memory device executes a refresh operation on memory banks, and includes: a command decoder that decodes a command from outside the semiconductor memory device, and outputs a refresh instruction when the command is an auto-refresh command; a refresh command generating unit that outputs a refresh command signal by a predetermined number of times corresponding to the number of word lines to be refreshed in response to the refresh instruction; a bank address counter that holds a bank address for selecting a memory bank to be refreshed, counts up the bank address every time the refresh command signal is output, and performs a carry-over action when count-up operations equivalent to the number of the memory banks are performed; and a row address counter that holds a row address for selecting a word line to be refreshed, and counts up the row address in response to the carry-over action.

Abstract: A method and system for efficiently organizing data in memory is provided. Exemplary aspects of the invention may include storing linear data and block data in more than one DRAM device and accessing the data with one read/write access cycle. Common control signals may be used to control the DRAM devices and the address lines used to address each DRAM device may be independent from one another. The data read from the DRAM devices may be reordered to make the data more suitable for processing by applications.

Abstract: Various embodiments of the invention may use one or more programmable non-volatile registers in each memory device to provide a separate device address for that device. These registers may be programmed at various points in the manufacturing and distribution cycle, such as but not limited to the memory chip factory, an original equipment manufacturer (OEM), or in the field. In some embodiments, other types of information (e.g., configuration information for the memory device) may also be programmed in this manner.

Abstract: A bus structure comprises a plurality of driver circuits, each driver circuit comprising an input for a first signal and a terminal for an output signal wherein each driver circuit is capable of providing the output signal at the terminal upon receipt of the first signal, a parallel bus comprising a plurality of output signal lines at a receiving end, being connectable to a target component, each of the signal lines extending at least from the receiving end to the terminal of a different one of the plurality of driver circuits, such that a length of the output signal line between the receiving end and the respective driver circuits decreases in a connection order among the plurality of driver circuits, and a signal line coupled to each of the inputs of the driver circuits in the connection order.

Abstract: A calibration circuit for a semiconductor device and a method of driving the same. The calibration circuit includes a PRBS generator in which a data pattern is generated within an integrated circuit without receiving data from the outside, a PRBS tester that compares output signals of a data latch that strobes and latches an output signal of a data input buffer to determine whether the interlock operation of data and strobe is pass or fail, and a calibration unit that calibrates a delay time using the output signal of the PRBS tester as much as a predetermined unit. Thus, variation in process, voltage, temperature, etc. can be freely calibrated even after package assembly. Accordingly, it is possible to guarantee a set-up/hold value that is necessary for high frequency operation of a system, and to reduce the time and resources necessary for product manufacture and for calibrating these values.

Abstract: A circuit for providing a delayed clock signal to a synchronous memory controller controlling a synchronous memory device comprises logic delay circuitry for performing synchronous memory device read access, the logic delay circuitry generating delay interval information. A programmable delay line receives a clock signal and the delay interval information, the programmable delay line delaying the clock signal by the delay interval. A 2-input XOR gate receives both the clock signal and the output of the programmable delay line, an output of the XOR gate providing a delayed 2× clock signal.

Abstract: A semiconductor device in the present invention includes a DLL circuit which determines a phase shift amount, an arithmetic circuit which shifts the phase shift amount by a predetermined phase at test mode time, registers which set the phase shift amount, and a transmission circuit which shifts a phase to the set phase to transmit or receive a signal. The transmission circuit has a first phase shifter which shifts a first signal to the set phase, a first bidirectional buffer which loops back the first signal at the test mode time, a second phase shifter which phase-shifts the signal outputted from the first bidirectional buffer, a third phase shifter which phase-shifts a third signal, a second bidirectional buffer which loops back the third signal at the test mode time, a fourth phase shifter which phase-shifts the signal outputted from the second bidirectional buffer, and a FIFO which takes out an output signal of the second phase shifter or the fourth phase shifter.

Abstract: A memory cell accessing method may include receiving an input address, determining whether the input address has been accessed at least a predetermined number of times, and converting a memory cell enabled by the input address when it is determined that the input address has been accessed the predetermined number of times or more.

Abstract: Mixing machine of the type comprising a container (10), inside which aggregates and binding fluids are introduced in order to form stone mixes, and at least one motor-driven mixing unit (30; 130A, 130B), the axis %; Y1, Y2) of which is parallel to and at a distance from the central axis (of the container (10). In order to introduce the binding fluids into the container (10), the machine comprises a dispensing unit (50; 150) which rotates in synchronism with the mixing unit (30; 130A, 130B), remaining always angularly at a distance therefrom.

Abstract: A rotor processor includes a stator chamber and a rotor mounted for rotation within the chamber. The rotor has a perimeter edge spaced closely to the interior wall of the chamber so as to define a slit or gap there between. The rotor is slidably mounted upon a rotor shaft, for movement between raised and lowered positions during operation of the processor, so as to automatically adjust the dimension of the slit, without operator intervention. As air flows from a plenum beneath the rotor, through the slit, and into the chamber, a pressure differential is created, which provides a lifting force to raise the rotor. The pressure drop is maintained relatively constant at a predetermined level after a lifting equilibrium force is achieved, regardless of the air flow volume.

Abstract: In a screw for extruder, a bearing segment having a function of supporting a screw main body at an intermediate part when kneading is performed is provided at a position corresponding to a kneading portion or on the downstream side of the kneading portion. The bearing segment is provided with at least two flights having a sectional shape of a complete meshing type with one streak in the axial direction, the flights are arranged in the rotational direction with uniformly displacing a phase thereof respectively, and length of the flights in the axial direction is set to 0.2D (D: rotational outer diameter of the bearing segment) or more. According to the above configuration, bending of the screw main body is prevented and abrasion of the flights and a barrel is suppressed.

Abstract: An emulsion production apparatus comprises a first rotor 9 which is fixed to a rotary hollow shaft 7 to atomize mixture liquid supplied from a mixture liquid pipe 2 at a portion bellow the mixture liquid pipe 2, an intermediate support body 15 which is disposed above the first rotor 9 and compresses the mixture liquid which has passed through the first rotor 9, and a second rotor 18 which is fixed to the hollow shaft 7 so as to further atomize the liquid which has passed through long holes 16 disposed in the support body 15.

Abstract: The present invention is a mixing device and a method of mixing viscous fluids with a mixing device. The mixing device includes a shaft and a first and second supports mounted for rotation with the shaft. A plurality of vanes extend from each support, the vanes defining open ends of the mixer into which fluid is drawn, and openings between the vanes through which fluid is expelled. In use, the mixing device is located in a viscous fluid and the shaft is rotated, thereby effecting rotation of the vanes, causing fluid to move through the vanes and mix the fluid.

Abstract: Disclosed is a fluid mixer that includes a plurality of fluid mixing units each having openings and a mixing portion arranged in a packed column. In the fluid mixer, the plurality of fluid mixing units are irregularly arranged in axial directions different from each other.

Abstract: A marine seismic exploration method and system comprised of continuous recording, self-contained ocean bottom pods characterized by low profile casings. An external bumper is provided to promote ocean bottom coupling and prevent fishing net entrapment. Pods are tethered together with flexible, non-rigid, non-conducting cable used to control pod deployment. Pods are deployed and retrieved from a boat deck configured to have a storage system and a handling system to attach pods to cable on-the-fly. The storage system is a juke box configuration of slots wherein individual pods are randomly stored in the slots to permit data extraction, charging, testing and synchronizing without opening the pods. A pod may include an inertial navigation system to determine ocean floor location and a rubidium clock for timing. The system includes mathematical gimballing. The cable may include shear couplings designed to automatically shear apart if a certain level of cable tension is reached.

Abstract: A method for utilizing a matched field-processing algorithm employing a number of sensors wherein the sensor output is the measured acoustic data as the first input and is translated to a frequency by applying a Fourier transform to a set of time samples as a data vector output. A replica vector is the second data input as a predicted quantity which is computed by an acoustic model with an assumed acoustic location. The output is an ambiguity surface ranging between zero and one with the highest values indicating the likely position of an acoustic location. The matched field response is generalized by averaging the response over multiple frequencies. A response for an array may be computed by forming beams and then combining them by multiplying each by an eigenray factor before summing. The computation of the response may be further defined by voxel interpolation.

Abstract: A network distributed seismic data acquisition system comprises seismic receivers, connected to remote data acquisition modules, receiver lines, base line modules base lines, a central recording system and a seismic source event generation unit. A Global positioning system antenna is positioned at many or all seismic receiver take-out points. Each antenna is supported by minimal antenna signal processing circuitry for transmitting antenna reception to a base GPS receiver having full GPS signal processing capability for determining the distinctive global position of each antenna.

Abstract: A sound determination apparatus receives acoustic signals by a plurality of sound receiving units, and generates frames having a predetermined time length. The sound determination apparatus performs FFT on the acoustic signals in frame units, and converts the acoustic signals to a phase spectrum and amplitude spectrum, which are signals on a frequency axis, then calculates the difference at each frequency between the respective acoustic signals as a phase difference, and selects frequencies to be the target of processing. The sound determination apparatus calculates the percentage of frequencies at which the absolute values of the phase differences of the selected frequencies are equal to or greater than a first threshold value, and determines that the acoustic signal coming from the nearest sound source is included in the frame when the calculated percentage is equal to or less than a second threshold value.