Abstract: A semiconductor device suppresses a magnetic field caused by a current loop formed by a signal wiring and a return path wiring, to reduce transmission loss of a high-speed signal. The semiconductor device includes a signal current path connected from a signal pad to a first external terminal via a first bonding wire and an interposer, and a current return path connected from a second external terminal provided adjacent to the first external terminal to a second pad provided adjacent to the signal pad via the interposer essentially on the same plane. The signal current path and the current return path are positioned so that they intersect with each other, thereby reversing the direction of a loop through which the current flows, and as a result, magnetic fields caused by the current loop formed by the signal current path and the current return path cancel each other.

Abstract: A transistor outline package is provided for a semiconductor integrated device suitable for use in a control module of an automobile for connection between a printed circuit board and a bus bar of such a module. The package includes a package housing, having a first end suitable for mounting to a PCB and which has a width. The package is also formed with a leadframe which includes a heat sink and ground plane blade suitable for connection to a bus bar, a plurality of connector leads suitable for connection to a PCB and at least one source tab lead suitable for connection to a module connector of such a control module. The plurality of connection leads and the source tab lead extend from the first end of the package housing side by side in the direction along and within the width of the first end of the package housing.

Abstract: A semiconductor package includes: a semiconductor chip having a first surface, and a second surface that is opposite to the first surface and allows a semiconductor device to be formed thereon; bonding pads disposed on the second surface of the semiconductor chip; and a metal ion barrier layer disposed on the first surface of the semiconductor chip, and preventing metal ions from penetrating into the semiconductor chip through the first surface of the semiconductor chip. Accordingly, the semiconductor package can obtain a superior semiconductor device by minimizing moisture absorption and effectively blocking the penetration of metal ions.

Abstract: A BGA package has an LSI package, a plurality of terminal pads arranged in a grid pattern on the rear surface of the LSI package, and solder balls for soldering the LSI package to a printed wiring board via the terminal pads. A plurality of the terminals pads located at each of the four corners of the outermost periphery of the LSI package form a group of first terminal pads, and each group of terminal pads is formed integrally as a reinforcing pad having a greater size than that of the other terminal pads.

Abstract: A copper bonding wire includes a line portion and a non-spherical block portion. The non-spherical block portion is physically connected to the line portion, and the cross-sectional area of the non-spherical block portion is bigger than that of the line portion.

Abstract: A wire bonding structure of a semiconductor package includes a bonding wire, a pad and a non-conductive adhesive material. The bonding wire includes a line portion and a block portion, wherein the block portion is physically connected to the line portion, and the sectional area of the block portion is bigger than that of the line portion. The pad is bonded to the block portion. The non-conductive adhesive material covers the pad and seals the whole block portion of the bonding wire.

Abstract: A wire bonding structure includes a chip and a bonding wire. The chip includes a base material, at least one first metallic pad, a re-distribution layer and at least one second metallic pad. The first metallic pad is disposed on the base material. The re-distribution layer has a first end and a second end, and the first end is electrically connected to the first metallic pad. The second metallic pad is electrically connected to the second end of the re-distribution layer. The bonding wire is bonded to the second metallic pad.

Abstract: This specification describes techniques for manufacturing an electronic system module. The module includes flexible multi-layer interconnection circuits with trace widths as narrow as 5 microns or less. A glass panel manufacturing facility, similar to those employed for making liquid crystal display, LCD, panels is preferably used to fabricate the interconnection circuits. A multi-layer interconnection circuit is fabricated on the glass panel using a release layer. A special assembly layer is formed over the interconnection circuit comprising a thick dielectric layer with openings formed at input/output (I/O) pad locations. Solder paste is deposited in the openings using a squeegee to form wells filled with solder. IC chips are provided with gold stud bumps at I/O pad locations, and these bumps are inserted in the wells to form flip chip connections. The IC chips are tested and reworked. The same bump/well connections can be used to attach fine-pitch cables.

Abstract: A semiconductor device, comprising: a semiconductor element 20 having a rectangular two-dimensional geometry and serving as a heat source; and a heat sink section 25 having the semiconductor element 20 mounted thereon, wherein a relation among the directional components of said thermal conductivity is: Kzz?Kyy>Kxx, where directional components of three-dimensional thermal conductivity of the heat sink section 25 in X, Y and Z directions are determined as Kxx, Kyy and Kzz, and where the longer side direction of the semiconductor element 20 is defined as X direction, the shorter side direction thereof is defined as Y direction and the thickness direction is defined as Z direction.

Abstract: According to an aspect of the invention, a semiconductor device includes: a semiconductor substrate; a memory chip disposed on the semiconductor substrate, the memory chip including: a first face that is not opposed to the semiconductor substrate; and a plurality of first pads disposed on the first face so that the first pads are aligned along a virtual line passing at a central portion on the first face; a controller chip disposed on the first face not to cover the first pads, the controller chip including: a second face that is not opposed to the first face; and a plurality of second pads disposed on the second face so that the second pads are aligned along at least one side of the second face; and a plurality of metal wires electrically connecting the first pads and the second pads.

Abstract: An integrated circuit device (300) includes a functional integrated circuit (IC) die (310) having a top IC surface with IC non-contact regions (313) and a plurality of electrically conductive bump pads (311, 312, 313) at pad locations. In the IC (310), at least one of the bump pads (311, 312, 313) extends outward from beyond the IC non-contact regions (313). The integrated circuit device (300) can also include a workpiece (305) having a top workpiece surface comprising at least one die attach area (319) for attaching the IC die (310). The die attach area (319) can include non-contact regions (316) and a plurality of electrically conductive contact pads (317) recessed relative to the non-contact regions (316), where the contact pads (317) face the top IC surface and match the pad locations (312).

Abstract: A device with contact elements. One embodiment provides an electrical device including a structure defining a main face. The structure includes an array of cavities and an array of overhang regions, each overhang region defining an opening to one of the cavities. The electrical device further includes an array of contact elements, each contact element only partially filling one of the cavities and protruding from the structure over the main face.

Abstract: The present invention discloses an inter-connecting structure for a semiconductor package and a method for the same. The inter-connecting structure for the semiconductor package comprises a substrate formed to support a die thereon; core paste formed on the substrate and adjacent to the die; and a stiffener formed in an upper portion of the core paste, wherein the hardness of the stiffener is larger than the hardness of the core paste.

Abstract: A process is described that enables the active side of a bumped wafer to be coated with a front side protection (FSP) material or wafer level underfill (WLUF) without contaminating the solder bumps with the coating material and/or filler. In this process a repellent material is applied to a top portion of the solder bumps on the active side of the wafer, the front side of the wafer is then coated with the coating material, the coating material is hardened, and optionally the repellent material is removed from the solder bumps.

Abstract: A semiconductor device has a semiconductor die mounted to a substrate with a plurality of composite interconnects formed between interconnect sites on the substrate and bump pads on the die. The interconnect sites are part of traces formed on the substrate. The interconnect site has a width between 1.0 and 1.2 times a width of the trace. The composite interconnect is tapered. The composite interconnects have a fusible portion connected to the interconnect site and non-fusible portion connected to the bump pad. The non-fusible portion can be gold, copper, nickel, lead solder, or lead-tin alloy. The fusible portion can be tin, lead-free alloy, tin-silver alloy, tin-silver-copper alloy, tin-silver-indium alloy, eutectic solder, or other tin alloys with silver, copper, or lead. An underfill material is deposited between the semiconductor die and substrate. A finish such as Cu-OSP can be formed over the substrate.

Abstract: A semiconductor device includes: an insulating film including a porous insulating material and formed above a substrate; an interconnection wire including copper and buried in a groove formed at least in an obverse surface of the insulating film; and a barrier insulating film including an insulating material containing a nitrogen heterocyclic compound and formed over the insulating film and the interconnection wire.

Abstract: Semiconductor devices including a substrate and an uppermost insulating layer formed on the substrate and having pores is provided. A conductive wiring is provided in the uppermost insulating layer. Dummy vias are provided, each penetrating the uppermost insulating layer, being adjacent to the conductive wiring, and having a space therein. Related methods of fabricating semiconductor devices are also provided.

Abstract: A semiconductor device includes an insulating film formed on a semiconductor substrate, and a buried interconnect formed in the insulating film and made of copper or a copper alloy. A barrier metal layer made of a platinum group element or a platinum group element alloy is formed between the insulating film and the buried interconnect, and the barrier metal layer partially includes an amorphous structure having a degree of amorphousness that provides a relatively high barrier property.

Abstract: (a) A copper alloy film containing at least two types of metal elements in addition to copper is formed on the surface of an insulator containing oxygen and formed on a semiconductor substrate. (b) A metal film made of pure copper or copper alloy is formed on the copper alloy film. (c) After the step (a) or (b), heat treatment is performed under the condition that a metal oxide film is formed on a surface of the insulator through reaction between the oxygen in the insulator and the metal elements in the copper alloy film.

Abstract: A semiconductor IC device which includes a circuit region and a peripheral region on a main surface of a semiconductor substrate, a first insulating film formed over the main surface, external terminals arranged in the peripheral region and formed over the first insulating film, a conductive guard ring formed over the first insulating film and provided around the external terminals, and second insulating films formed in the internal region and the peripheral region, the second insulating film in the peripheral region is formed over the first insulating film and over the guard ring and is contacting the external terminals, the second insulating films of the circuit region and that of the peripheral region are separately formed and are isolated from each other. Separate second insulating film may be formed over the wirings of one or more of existing wiring levels of the semiconductor device.

Abstract: An insulating-film-forming composition for a semiconductor device comprising an organic silica sol with a carbon atom content of 11 to 17 atom % and an organic solvent is disclosed. The organic silica sol comprises a hydrolysis-condensation product P1 and a hydrolysis-condensation product P2. The hydrolysis-condensation product P1 is obtained by hydrolyzing and condensing (A) a silane monomer comprising a hydrolyzable group and (B) a polycarbosilane comprising a hydrolyzable group in the presence of (C) a basic catalyst, and the hydrolysis-condensation product P2 is obtained by hydrolyzing and condensing (D) a silane monomer comprising a hydrolyzable group.

Abstract: A semiconductor chip has a main surface. A conductive portion is provided on the main surface and made from a material having conductivity and malleability. A sealing resin portion has a surface facing the main surface. An electrode is provided on the conductive portion and passes through the sealing resin portion between the conductive portion and the surface. As a result, there is provided a semiconductor device that can be downsized.

Abstract: A connection arrangement having an outer conductive structure arranged at least partly or completely in a cutout of an electrical insulation layer is provided. An inner conductive structure is arranged at the bottom of the cutout on one side of the insulation layer. The inner conductive structure adjoins the outer conductive structure in a contact zone. A contact area is arranged at the outer conductive structure on the other side of the cutout. The contact zone and the contact area do not overlap. The bottom of the cutout is arranged to overlaps at least half of the contact area, to provide a step in the insulation layer at the edge of the cutout outside a main current path between the contact area and the inner conductive structure.

Abstract: A device including an imide layer with non-contact openings and the method for producing the device. One embodiment provides a substrate on a main surface of the substrate, an imide layer on the metallization layer, at least one contact opening through the imide layer and a plurality of non-contact openings in the imide layer. The non-contact openings are dimensioned to provide for an increased surface area of the imide layer or a surface area of the imide layer which is not reduced by more than 10 percent.

Abstract: A semiconductor die has a peripheral region around the die. An insulating layer is formed over the semiconductor die. A portion of the insulating layer and peripheral is removed to form a recess around the semiconductor die. A conductive layer is deposited over the insulating layer and recess. The conductive layer is electrically connected to contact pads on the semiconductor die and conforms to a step into the recess. A gap is created through the conductive layer and peripheral region around the semiconductor die. An insulating material is deposited in the gap. A portion of the insulating material is removed to form a through hole via (THV). A conductive material is deposited in the THV to form a conductive THV. The conductive THV is recessed with respect to a surface of the semiconductor die. The conductive THV is electrically connected to the conductive layer.

Abstract: There is provided a semiconductor device comprising a semiconductor substrate having an active area in which a plurality of active elements are formed, and a non-active area excepting the active area; at least one electrode pad electrically connected to any of the active elements. At least one Through Silicon VIA electrode is formed, being electrically connected to the electrode pad by way of the non-active area. The non-active area has an insulating region obtained by forming an insulating film on the semiconductor substrate, and a dummy section obtained by leaving a base material of the semiconductor substrate in the insulating region. The dummy section is provided in a position where an outer edge of the Through Silicon VIA electrode does not intersect with the boundary between the insulating region and the dummy section.

Abstract: The invention provides an agent for post-etch treating a silicon dielectric film, including: at least one nitrogen-containing substance selected from the group consisting of ammonium bases and amine compounds; an acid; and at least one silicon-containing compound containing silicon, carbon and hydrogen. According to the present invention, it becomes possible to suppress an increase in the dielectric constant of a silicon dielectric film caused by etching.

Abstract: A semiconductor device assembly (200) includes a workpiece (205) having a surface including a die attach region corresponding to regions under an integrated circuit (IC) die 210. The die attach region of workpiece (205) includes non-noble metal surfaces (215) and a plurality of flip chip (FC) pads at pad locations (214). A solder mask layer (207) is on a surface of the workpiece (205) outside the die attach region. The non-noble metal surfaces (215) in the die attach region include an adhesion promoter layer (221), wherein the adhesion promoter layer (207) is absent from the plurality of FC pads (214). An integrated circuit (IC) die (210) having a plurality of bumps (211) bonded in a flip chip arrangement to the workpiece (205). An underfill material (232) fills a space between the bumped IC die (210) and the workpiece (205).

Abstract: A resin containing a conductive particle and a gas bubble generating agent is supplied in a space between the substrates each having a plurality of electrodes. The resin is then heated to melt the conductive particle contained in the resin and generate gas bubbles from the gas bubble generating agent. A step portion is formed on at least one of the substrates. In the process of heating the resin, the resin is pushed aside by the growing gas bubbles, and as a result of that, the conductive particle contained in the resin is led to a space between the electrodes, and a connector is formed in the space. At the same time, the resin is led to a space between parts of the substrates at which the step portion is formed, and cured to fix the distance between the substrates.

Abstract: A wirebond protector has an elongated shape that corresponds to the elongated array of wirebonds along the edge of a microelectronic device that connect a semiconductor die to electrical conductors on a substrate. In making the microelectronic device with wirebond protection, wirebonds are first formed in the conventional manner The wirebond protector is then attached to the device in an orientation in which it extends along the array of wirebonds to at least partially cover the wirebonds.

Abstract: A semiconductor device includes a substrate; an alignment mark formed on the substrate and composed of a metal film; a cover insulating film formed on the alignment mark and covering an entire surface of the alignment mark; and a polyimide film formed on the cover insulating film, and having an opening, which is opened on the alignment mark and has an end face aligning with an end face of the alignment mark, in plan view.

Abstract: The present invention provides a resin-cemented optical element comprising a base member 10 and a resin layer 11 formed on the surface of the base member; the resin layer 11 being in a thickness of 300 ?m or smaller at least at some part of a peripheral portion (i.e., a region within 1 mm from the peripheral edge face 17 of the resin layer 11, or a region outside an effective-diameter region), and being in a thickness 12 of 850 ?m or larger at a position which is thickest in the resin layer; a mold therefore; a manufacturing method thereof; and an optical article having this optical element.

Abstract: The method and the apparatus serve for blow-moulding containers. After thermal conditioning, a parison is formed into the container within a blowing mould of a blow-moulding machine (41) by the action of blow-moulding pressure. The required blow-moulding gas is provided by a compressor (42). A compressor controller (44) is connected to a controller of the blow-moulding machine in such a way that the controller of the blow-moulding machine generates a setpoint value (49) for the initial pressure which is provided by the compressor.

Abstract: A tire vulcanizing apparatus and a tire vulcanizing method, by which the pressure and temperature of a heating and pressurizing medium to be supplied to the internal space of a raw tire can be controlled without the condition of pressure being affected by the condition of temperature.

Abstract: Non-blocking polymer pellets are produced in spherical or nearly spherical form by introducing molten polymer directly from a polymerization reactor into a coolant and pelletizing just prior to, simultaneously with, or immediately following entry into the coolant such that residual heat allows the polymer pellets to change their shape to eliminate sharp corners, particularly cylindrical shapes, and assume a spherical-type morphology.

Abstract: The invention relates to vitreous aroma particles and the preparation thereof, as well as to the use thereof in foods, consumer articles and pharmaceuticals.

Abstract: Mandrel supported IV tubing is inserted within a mold of a mold assembly to heat the IV tubing and form a tapered end of the tubing. The tip of the tubing extending beyond the tapered end of the tubing is severed by the mandrel bearing against the mold to lodge the tip in an outlet of the mold. Cooling air is introduced to the mold assembly to cool the mold and to create a flow of turbulent air about the outlet of the mold to extract the severed tips. The turbulent air is exhausted through a channel, pipe and fitting into a collection chamber and causes translation of the severed tip to and into the collection chamber. Sensors may be incorporated to sense the translation of the severed tips.

Abstract: A method and device for the production of polymer filaments with a diameter of less than one micron. A plurality of polymer components are extruded through a spin pack and then attenuated using gas flows which are accelerated to achieve high velocity by means of a converging, diverging nozzle. The plurality polymer components may be extruded in an islands in the sea or segmented pie configuration. As a result of the high velocity gas flow, the plural components are split apart into their individual components resulting in filaments and fibers having a diameter or minor dimension of less than one micron.

Abstract: A method and apparatus for producing a plurality of bi-oriented, heat-shrinkable thermoplastic tubular films is disclosed. Thermoplastic resin is extruded through a plurality of annular dies to form a plurality of molten plastic tubes. The tubes are cooled and solidified and sent through a plurality of pinch rollers to stretch the tubes simultaneously in a machine and transverse direction, creating a plurality of tubular films. The films are cooled and heated, and then relaxed simultaneously in a machine and transverse direction. Winding rollers then wind up the finished tubular films.

Abstract: Disclosed is a moulding core for producing a fibre composite component, in particular a stringer on a base component in aerospace, of a spiral construction, wherein the moulding core is a hollow profile with an outer geometry adapted to the moulding core and with a slit provided in the wall of the hollow profile and extending spirally around its periphery; and wherein the slit hollow profile is provided with positional fixing, wherein the slit extending spirally around the periphery penetrates the wall of the hollow profile with the exception of at least three locations arranged such that they are distributed around the circumference of the wall of the hollow profile. A method for producing a fibre composite component, such as a fibre composite component for aerospace, is also disclosed.

Abstract: A method is provided for manufacturing a shell with a textured appearance as follows. A mold formed with a textured mold portion is provided. A film is provided into the mold and in contact with the textured mold portion. The shell is formed by injecting a plastic material into the mold to push the film further into the textured mold portion.

Abstract: A method for creating a tangible item (such as an “A” pillar garnishment 18) which increases the capacity of the item to absorb energy by the incorporation and/or addition of a plurality of adhesive-covered beads 25, and which utilizes the method and/or type of energy used to normally form the item to incorporate and/or add the adhesive-covered beads 25, thereby increasing efficiency while reducing cost. A new and novel tangible item, such as “A” pillar garnishment 18, having programmed energy absorption characteristics is also disclosed.

Abstract: The present invention provides methods for making shapeable composite materials or shaped articles from recycled materials comprising forming a crumb slurry by, in any order, increasing the particle size of a composition comprising white water waste from one or more emulsion or dispersion polymer and combining the white water waste polymer with one or more waste thermoset material, preferably, ground tire rubber (GTR), and, then processing the combined material wet or dry as a thermoplastic to form the composite material or article. Additionally, shaped articles and composite materials can be made from substantially all recycled waste materials, such as white water waste from acrylic or vinyl polymer emulsions and waste rubber vulcanizates. The composite materials can consist essentially of reshapeable materials, i.e. without crosslinking agents, thermosettable compositions or compatibilizers to provide reshapeable or recyclable articles.

Abstract: A melt feed device for an injection molding apparatus having at least one nozzle element connected both to a first hot runner and a second hot runner for feeding both the first melt and the second melt into an injection molding mold. The nozzle has three substantially concentrically arranged feed passages, wherein the innermost and the outermost feed passage are in communication with the first hot runner and the central feed passage is in communication with the second hot runner. A closure element is provided that can be reciprocated between a first position in which the closure element closes all feed passages, a second position in which the closure element opens the outermost feed passage but closes the other two feed passages and a third position in which the closure element opens all feed passages. The invention also includes process and molds using the device.

Abstract: A method and assembly for molding golf balls is disclosed herein. The invention includes an injection mold assembly (20) with a first mold half (22a) having a plurality of cavities and at least one locating pin (92) and a second mold half (22b) having a plurality of cavities and at least one aperture for engagement with the at least one bushing (94) and a spring (250) for exerting a lateral force against the second mold half (22b). Preferably, the locating pin has a first taper section (93) and a second taper section (95). Preferably, the bushing (84) has a first cavity 1(1150 and a second cavity (117).

Abstract: A method for forming substantially parallel linear scratches on a thermoplastic resin film, comprising bringing the film into sliding contact with a means having a lot of fine projections for forming linear scratches, and pressing the film onto the linear-scratch-forming means from the opposite side of the linear-scratch-forming means by a film-pressing means, in a region in which the film is in sliding contact with the linear-scratch-forming means.

Abstract: A concrete block machine including a mold having at least one mold cavity, a feedbox driven back and forth between retracted and extended positions, wherein the feedbox is positioned over a top of the mold deposits concrete in the at least one mold cavity when at the extended position, a cutoff bar coupled to the feedbox and including a moveable cutoff element, and a drive system. The drive system is coupled to the moveable cutoff element and moves the moveable cutoff element to adjust a distance between the moveable cutoff element and the top of the mold as the feedbox is driven from the extended position to the retracted position such that the moveable cutoff element removes varying amounts of concrete deposited in the mold cavity so that a depth of concrete remaining in the mold cavity varies in a desired fashion in a direction of movement of the feedbox.

Abstract: This invention relates generally to a method for forming a concrete floor as a monolithic unit, wherein a wet concrete mix is deposited and worked to achieve a generally uniform flatness of concrete and adding to the top layer thereof a decorative aggregate material. Subsequently, the surface of the concrete is worked, allowed to partially cure and then ground and polished to substantially remove surface irregularities and reveal the decorative aggregate. The floor surface may then be coated with a sealant to achieve a terrazzo-like appearance.

Abstract: According to an aspect of the invention, a compression molding method for a cutting insert, in which molding powder filled into a molding space defined by a die, an upper punch, and a lower punch is compression-molded by the upper and lower punches, includes, sliding both the upper and lower punches individually to positions just short of estimated stop positions obtained for design by means of a position controller, and then sliding the punches by means of a load controller so that a predetermined pressure is reached.

Abstract: An apparatus for in-mold-decoration includes a male mold, a female mold comprising a surface facing the male mold, a foil, a press member, and a supporting member. The surface of the female mold defines a cavity. The foil is applied to the surface of the female mold. The press member is positioned between the male mold and the female mold, and capable of hermetically pressing the foil on the surface of the female mold. The supporting member is movably mounted to the surface of the female mold to prop up the foil toward the male mold before the press member presses the foil on the surface of the female mold.