Abstract: The present invention relates to composites comprising an elastic and/or thermoplastic-elastic carrier medium and hard magnetic particles which are polarised in a magnetic field, a magnetisation remaining after switching off the magnetic field.

Abstract: To provide a composition useful for forming a heat conductive sheet that satisfies both high heat conductivity and sufficient softness, has sufficient cohesive strength at a surface portion of a heat conductive sheet and does not cause remaining paste and breakage of an electronic appliance when the sheet is peeled. The composition comprises (A) a photo polymerizable component consisting of a (meth)acryl type monomer or its partial polymer; (B) a heat conductive filler; (C) a photo reaction initiator for initiating the polymerization of the photo polymerizable component; and (D) a photo absorber for absorbing and removing a predetermined wavelength band from electromagnetic rays used for the polymerization of the photo polymerizable component.

Abstract: A composition which comprises or consists of more than 75 to less than 80 wt. % of pentafluoroethane (HFC-125); more than 17 to less than 22.7 wt. % of 1,1,1,2-tetrafluoroethane (HFC-134a); and more than 2.3 to less than 3.0 wt. % of n-butane (R600).

Abstract: Superhydrophobic coating compositions are provided. The compositions comprise nanoparticles between 5-100 nm in size and a polymeric binder. The compositions are effective in preventing ice formation on the surface of various substrates.

Abstract: The invention provides a composition for chemical-mechanical polishing. The composition comprises an abrasive, a first metal rate polishing modifier agent, a second metal rate polishing modifier agent, and a liquid carrier. In one embodiment, the first metal rate polishing modifier agent has a standard reduction potential less than 0.34 V relative to a standard hydrogen electrode, and the second metal rate polishing modifier agent has a standard reduction potential greater than 0.34 V relative to a standard hydrogen electrode. In other embodiments, the first and second metal rate polishing modifier agents are different oxidizing agents.

Abstract: The invention relates to materials for use as electrodes in an alkali-ion secondary (rechargeable) battery, particularly a lithium-ion battery. The invention provides transition-metal compounds having the ordered-olivine, a modified olivine, or the rhombohedral NASICON structure and the polyanion (PO4)3? as at least one constituent for use as electrode material for alkali-ion rechargeable batteries.

Abstract: The present invention is directed to a method for producing novel metal nanoparticles and nanomaterials. The method involves mixing one or more metal halide starting materials, one or more lithium reducing agent and one or more solvents. In an exemplary embodiment, the resultant metal nanoparticles are substantially free from impurities and have a novel porous and substantially hollow structure.

Abstract: The present invention relates to a method for manufacturing H2O composite sorbers consisting of a polymeric matrix in which hygroscopic inorganic salts are dissolved, to composite sorbers consisting of hygroscopic inorganic salts dissolved in a polymeric matrix and their use for the removal of H2O from the housings of devices sensitive to the presence of H2O.

Abstract: After adding water to the carboxymethyl carrageenan which is raw material and mixing them well, the ionizing radiation of more than fixed dose is irradiated to the obtained paste sample of fixed concentration. As a result, an excellent hydrogel in heat resistance which does not dissolve at 50° C. or more can be obtained. The manufactured gel can be used for many kinds of products. Because this gel has a biodegradation characteristic, it is possible to dispose by composting.

Abstract: The present invention provides a liquid-crystalline polyester blend composition comprising 100 parts by weight of a liquid-crystalline polyester blend and 0.1-300 parts by weight of calcium titanate and/or barium titanate: wherein said liquid-crystalline polyester blend is obtainable by combining liquid-crystalline polyester (A) (LCP A) and liquid-crystalline polyester (B) (LCP B) such that the ratio by weight of (LCP A)/(LCP B) is 99/1 to 80/20; wherein, LCP A consists of 100 molar parts of major repeating units and optionally 0.

Abstract: The present invention relates to dielectrically positive liquid-crystalline media comprising one or more compounds of the formula I in which the parameters have the meaning indicated in the specification, and optionally one or more compounds selected from the group of the compounds of the formulae II and III in which the parameters have the meaning indicated in the specification, and optionally one or more compounds of the formula IV in which the parameters have the meaning indicated in the specification, and to liquid-crystal displays containing these media, especially to active-matrix displays and in particular to TN, IPS and FFS displays.

Abstract: A method of mixing a catalyst with a heavy oil to create a heavy oil/catalyst mixture. This is followed by combining the heavy oil/catalyst mixture with supercritical water to form light hydrocarbon products and heavy hydrocarbon products. By doing so the light hydrocarbon products can be separated into a gaseous top product, an upgraded liquid hydrocarbon product and a water phase.

Abstract: A reformer reactor is provided for converting hydrocarbon fuel into hydrogen rich gas by auto-thermal reaction process. The reformer reactor has a preferably cylindrically shaped, double wall housing with an inner wall and an outer wall and two side faces, wherein the inner wall and the two side faces form a reaction chamber. Additionally, the inner wall is charged with a first electric charge which prevents the hydrocarbon fuel molecules injected into the reaction chamber by a fuel inlet from hitting the warm inside surfaces of the reaction chamber and burn to soot, subsequently.

Abstract: An anticorrosion material comprising colloidal particles and multivalent metal ions is disclosed. The particles are preferably silica. The metal ions may be Al, Ga, Ti, Zr, Hf, Zn, Mg, Ca, Nb, Ta, Fe, Cu, Sn, Co, W or Ce. The material can be added to a conversion coating liquid, mixed with a polymeric binder or used as such to form a coating.

Abstract: A carbon nanotube bulk material is provided. The carbon nanotube bulk material includes carbon nanotubes constituting a matrix and a polymer binder interposed between the carbon nanotubes. The polymer binder includes a polymer backbone and at least one organic moiety grafted to a terminal or a side of the polymer backbone. The organic moiety has a C3-C24 aromatic functional group having at least one hydroxy group.

Abstract: The disclosure provides compositions prepared by combining nanomaterials with a halide-containing polymer, thereby forming a combined polymer matrix having dispersed nanomaterials within the matrix. The nanomaterials may be carbon-based nanotubes, in some applications. A halide-containing monomer is combined with nanotubes, and then polymerized in some compositions. In other applications, a halide-containing polymer is solution processed with nanotubes to form useful compositions in the invention. Also disclosed are probes for near field detection of radiation.

Abstract: Inorganic particle/polymer composites are described that involve chemical bonding between the elements of the composite. In some embodiments, the composite composition includes a polymer having side groups chemically bonded to inorganic particles. Furthermore, the composite composition can include chemically bonded inorganic particles and ordered copolymers. Various electrical, optical and electro-optical devices can be formed from the composites.

Abstract: The invention relates to materials for use as electrodes in an alkali-ion secondary (rechargeable) battery, particularly a lithium-ion battery. The invention provides transition-metal compounds having the ordered-olivine, a modified olivine, or the rhombohedral NASICON structure and the polyanion (PO4)3? as at least one constituent for use as electrode material for alkali-ion rechargeable batteries.

Abstract: Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si3N4), and a method of depositing the silicon precursors on substrates using low temperature (e.g., <550° C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures.

Abstract: Optical devices of excellent optical and physical properties produced from cured resins are disclosed. The resins and/or the cured hybrid polymer material made with the resins are characterized by a high level of cycloaliphatic-containing groups. Specific additives that can participate in crosslinking the curable polysiloxane provide additional physical property advantages.

Abstract: The present invention relates to a method for processing a nuclear fuel comprising a fissile material, SiC and possibly carbon, said method comprising the contacting of said fuel with a chlorine/oxygen mixture at a temperature below 950° C., and more particularly at a temperature between 400 and 900° C., so as to remove the SiC, and the carbon if this is present, from said fuel. The method of the invention makes it possible for example to declad TRISO or BISO nuclear fuel particles, i.e. particles enabling the nuclear fuel to be confined in a sheath or cladding, or to remove an SiC matrix from a fuel having a heterogeneous SiC matrix. The present invention therefore has many applications, especially in the reprocessing of irradiated nuclear fuels.

Abstract: An adjustable pry bar comprises a prying block used to pry and remove an object and including first and second side wings mounted on a rear end thereof and parallel to each other to clamp a head end of a handle, the first side wing including a groove to receive multiple balls and biasing members; an adjusting mechanism installed in a central aperture and a notch of the head end and including a plurality of biasing members and balls, a shaft member, and a control member, the biasing member being flexible to be pushed backward to abut against the balls, the shaft member including a first end for engagement with the balls, the first end including a recess arranged around an outer rim thereof, the shaft member also including a second end extending out of a second through hole of the second side wing to coupled with the control member.

Abstract: Hoists for hoisting loads by means of a cable are in existence for a long period. There are various types of hoists, which include winches and capstans. Generally, the principle of operation of a hoist is based on the cable being driven by adherence of the cable to the drum of the hoist. A hoist is described according to an embodiment of the present invention. The hoist comprises a drum, a plurality of guides, a guide support and a biasing device for displacing a portion of a cable away from the guide when the drum is rotationally displaced to thereby hoist a load.

Abstract: A guardrail system having a standard length-of-need section and a terminal end, the terminal end having a high effective flare rate of at least 5:1 is provided with two independent and cooperating cable anchor systems. One of the cable anchor systems is a side impact releasing mechanism which may include a strut connecting a first and a second breakaway post; a strut anchor release affixed at a first end to a first breakaway post and at a second end to the rail element; a strut with a plug weld anchor release; a strut with a shear bolt anchor release; and a strut with an angled plate anchor release.

Abstract: Light, Medium, and Heavy Weight, Concrete Fencing Systems with precast attached footers or rebar only footers, fencing connections are safety pinned. New lightweight versions of concrete fencing with reinforced connections for hung installation and/or center panel section footer rest in configurations including imitations of existing pre-manufactured 6?×8? wooden fencing panels, also improved heavyweight concrete fencing including lightweight material saving hollow core construction and a rebar pin fence component safety connection method. Concrete less footer setting are accomplished by cast concrete auger blade post bottoms. Concrete billet connection system allows lifting capabilities for fencing post and panel sections. New capabilities for usage of the fencing as an electrical raceway with precise access holes and boxes.

Abstract: The present invention provides a fence system including a top rail and bottom rail spaced from each other and having opposing ends. A plurality of spaced elongate members extends between the top and bottom rails, adjacent elongate members of the plurality of elongate members defining a space therebetween. A plurality of boards is provided with one of the plurality of boards being disposed in the spaces formed by the elongate members. The plurality of boards includes opposed side edges. A pair of posts are spaced from one another and securable to the ends of the top and bottom rail. The posts each include a peripheral wall defining a post interior. The peripheral wall having a first and second rail opening formed therein for receiving the ends of the top and bottom rail respectively. The ends of the top and bottom rails extend into the post interior. The peripheral wall further including a slot formed therein.

Abstract: A phase change memory device capable of fully discharging bit lines, even while occupying a relatively small area, and a fabricating method thereof are presented. The phase change memory device includes a semiconductor substrate, a word line area, a discharge line area, a switching PN diode, a dummy PN diode, a phase change structure, and a bit line. The word line area is formed in a memory cell area of the semiconductor substrate. The discharge line area is formed in the bit-line discharge area of the semiconductor substrate. The switching PN diode is formed on the word line area. The dummy PN diode is formed on the discharge line area. The phase change structure is formed on the switching PN diode and is electrically connected to the switching diode. The bit line is electrically connected to the phase change structure and the dummy PN diode.

Abstract: A chalcogenide film of the invention is formed by a sputtering within a contact hole formed in an insulating layer on a substrate, and is made of a chalcogen compound including a melting-point lowering material that lowers a melting point.

Abstract: Methods of fabricating a memory unit are provided including forming a plurality of first nanowire structures, each of which includes a first nanowire extending in a first direction parallel to the first substrate and a first electrode layer enclosing the first nanowire, on a first substrate. The first electrode layers are partially removed to form first electrodes beneath the first nanowires. A first insulation layer filling up spaces between structures, each of which includes the first nanowire and the first electrode, is formed on the first substrate. A second electrode layer is formed on the first nanowires and the first insulation layer. A plurality of second nanowires is formed on the second electrode layer, each of which extends in a second direction perpendicular to the first direction. The second electrode layer is partially etched using the second nanowires as an etching mask to form a plurality of second electrodes.

Abstract: A memory device having a phase change material element with a modified stoichiometry in the active region does not exhibit drift in set state resistance. A method for manufacturing the memory device includes first manufacturing an integrated circuit including an array of phase change memory cells with bodies of phase change material having a bulk stoichiometry; and then applying forming current to the phase change memory cells in the array to change the bulk stoichiometry in active regions of the bodies of phase change material to the modified stoichiometry, without disturbing the bulk stoichiometry outside the active regions. The bulk stoichiometry is characterized by stability under the thermodynamic conditions outside the active region, while the modified stoichiometry is characterized by stability under the thermodynamic conditions inside the active region.

Abstract: A nonvolatile memory device includes: a first conductive layer; a second conductive layer; a first resistance change layer provided between the first conductive layer and the second conductive layer and having an electrical resistance changing with at least one of an applied electric field and a passed current; and a first lateral layer provided on a lateral surface of the first resistance change layer and having an oxygen concentration higher than an oxygen concentration in the first resistance change layer

Abstract: Optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit an array of conductive regions; and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a method of forming a nanocrystalline film includes fabricating a plurality of nanocrystals having a plurality of first ligands attached to their outer surfaces; exchanging the first ligands for second ligands of different chemical composition than the first ligands; forming a film of the ligand-exchanged nanocrystals; removing the second ligands; and fusing the cores of adjacent nanocrystals in the film to form an electrical network of fused nanocrystals.

Abstract: The gate-all-around (GAA) type semiconductor device may include source/drain layers, a nanowire channel, a gate electrode and an insulation layer pattern. The source/drain layers may be disposed at a distance in a first direction on a semiconductor substrate. The nanowire channel may connect the source/drain layers. The gate electrode may extend in a second direction substantially perpendicular to the first direction. The gate electrode may have a height in a third direction substantially perpendicular to the first and second directions and may partially surround the nanowire channel. The insulation layer pattern may be formed between and around the source/drain layers on the semiconductor substrate and may cover the nanowire channel and a portion of the gate electrode. Thus, a size of the gate electrode may be reduced, and/or a gate induced drain leakage (GIDL) and/or a gate leakage current may be reduced.

Abstract: The invention is a vertical geometry light emitting diode capable of emitting light in the electromagnetic spectrum having a substrate, a lift-off layer, a strain relieved superlattice layer, a first doped layer, a multilayer quantum wells comprising alternating layers quantum wells and barrier layers, a second doped layer, a third doped layer and a metallic contact that is in a vertical geometry orientation. The different layers consist of a compound with the formula AlxlnyGa(1-x-y)N, wherein x is more than 0 and less than or equal to 1, y is from 0 to 1 and x+y is greater than 0 and less than or equal to 1. The barrier layer on each surface of the quantum well has a band gap larger than a quantum well bandgap. The first and second doped layers have different conductivities.

Abstract: A light-emitting device is disclosed, including a light-emitting element and a surface plasmon coupling element, having an intermediary layer connected to the light-emitting element and a metal structure on the intermediary layer, wherein the intermediary layer is conductive under low-frequency injection current and has the characteristics as dielectric material in a wavelength range 100 nm˜20000 nm.

Abstract: A light emitting diode includes a conductive layer, an n-GaN layer on the conductive layer, an active layer on the n-GaN layer, a p-GaN layer on the active layer, and a p-electrode on the p-GaN layer. The conductive layer is an n-electrode.

Abstract: Implementations of quantum well photodetectors are provided.

Abstract: Provided is a nanowire memory including a source and a drain corresponding to the source, and a nano channel formed to connect the source to the drain. Here, the nano channel includes a nanowire electrically connecting the source to the drain according to voltages of the source and drain, and a nanodot formed on the nanowire and having a plurality of potentials capturing charges. Thus, the nanowire memory has a simple structure, thereby simplifying a process. It can generate multi current levels by adjusting several energy states using gates, operate as a volatile or non-volatile memory by adjusting the gates and the energy level, and include another gate configured to adjust the energy level, resulting in formation of a hybrid structure of volatile and non-volatile memories.

Abstract: A HEMT with improved electron confinement is formed by removing semiconductor cap material between the channel and the source and drain regions. The source and drain regions can be isolated from the gate region by an insulating layer. Significant noise reduction can be achieved as a result of these techniques. Also, removing the semiconductor cap material can provide an increased breakdown voltage for the transistor.

Abstract: A semiconductor device is provided and includes a field effect transistor having a gate electrode, a gate insulating layer, a channel forming region composed of an organic semiconductor material layer and a source/drain electrode made of a metal. A portion of the source/drain electrode in contact with the organic semiconductor material layer comprising the channel forming region is covered with an electrode coating material. Because the electrode coating material is composed of organic molecules having a functional group which can be bound to a metal ion and a functional group that binds to the source/drain electrode composed of the metal, low contact resistance and high mobility can be achieved.

Abstract: A white organic light-emitting device is provided by the present invention. The white organic light-emitting device includes an anode, a hole transport layer, a first light-emitting layer, a second light-emitting layer, a third light-emitting layer, an electron transport layer and a cathode, wherein the second light-emitting layer is formed between the first and the third light-emitting layers, the emission wavelength of the second light-emitting layer is longer than that of the first and third light-emitting layers, and the host material of the first and third light-emitting layer are different. The white organic light-emitting device of the present invention is capable of effectively increasing the luminous efficiency, reducing operating voltage, and providing color stability.

Abstract: To provide an organic electroluminescence element, containing: at least one pair of electrodes; at least one organic light-emitting layer disposed between the electrodes, the organic light-emitting layer comprising two phosphorescent light-emitting materials and a charge-transporting material, wherein the organic light-emitting element is a white organic light-emitting element, and the charge-transporting material is a hole-transporting material, and wherein one of the two phosphorescent light-emitting materials is a platinum complex expressed by the following general formula 1, and the other is an iridium complex expressed by any one of the following general formulae 2A to 2C:

Abstract: A method of manufacturing an organic thin film transistor, comprising: providing a substrate comprising source and drain electrodes defining a channel region; subjecting at least the channel region to a cleaning treatment step; and depositing organic semiconductive material from solution into the channel region by inkjet printing.

Abstract: Provided are: an aromatic amine derivative in which a terminal substituent such as a dibenzofuran ring or a dibenzothiophene ring is bonded to a nitrogen atom directly or through an arylene group or the like; an organic electroluminescence device including an organic thin film layer formed of one or more layers including a light emitting layer and interposed between a cathode and an anode in which a layer of the organic thin film layer contains the aromatic amine derivative by itself or as a component of a mixture, and the device has a long lifetime and high luminous efficiency; and an aromatic amine derivative for realizing the device.

Abstract: A display apparatus comprises a display unit which has a plurality of organic EL elements two-dimensionally arranged to define pixels. Each organic EL element comprises a first electrode, an organic EL layer, and a second electrode laminated in order on an optically transparent substrate. One of the first electrode and second electrode is an optically transparent electrode, while the other is a non-optically transparent electrode. The non-optically transparent electrode is disposed to exist only in part of each pixel, as viewed from vertically above (for example, the width of the electrode is made smaller than the width of a pixel). In this way, the display unit can transmit light through portions of the pixels in which the non-optically transparent electrodes are not disposed. Preferably, the non-optically transparent electrode includes a mirror surface opposite to the organic EL layer.

Abstract: A vanadium dioxide nanowire grown long and thin along a [110] direction is disclosed.

Abstract: A thin film transistor includes: a substrate; and, on the substrate, an oxide semiconductor film which serves as an active layer and contains In, Ga, and Zn, a gate electrode, a gate insulating film, a source electrode, and a drain electrode, wherein, when a molar ratio of In, Ga, and Zn in the oxide semiconductor film is expressed as In:Ga:Zn=(2.0?x):x:y, wherein 0.0<x<2.0 and 0.0<y, the distribution of y in the thickness direction of the oxide semiconductor film is such that the oxide semiconductor film has a region at which a value of y is larger than that at a surface of the oxide semiconductor film at a side closer to the substrate and that at a surface of the oxide semiconductor film at a side farther from the substrate.

Abstract: Test structures for semiconductor devices, methods of forming test structures, semiconductor devices, methods of manufacturing thereof, and testing methods for semiconductor devices are disclosed. In one embodiment, a test structure for a semiconductor device includes at least one first contact pad disposed in a first material layer in a scribe line region of the semiconductor device. The at least one first contact pad has a first width. The test structure also includes at least one second contact pad disposed in a second material layer proximate the at least one first contact pad in the first material layer. The at least one second contact pad has a second width that is greater than the first width.

Abstract: To suppress or prevent the generation of a crack in an insulating film below an external terminal which could be caused by an external force added to the external terminal of a semiconductor device. A top wiring layer MH of wiring layers formed on a main surface of a silicon substrate has a pad comprising a conductor pattern containing aluminum. On an undersurface of the pad, there are arranged a barrier conductor film formed by laminating, from below, a first barrier conductor film and a second barrier conductor film. Of a fifth wiring layer which is one layer lower than the top wiring layer, in an area overlapping with a probe contact area of the pad in a plane, the conductor pattern is not arranged. Further, the first and second barrier conductor films are the conductor films including titanium and titanium nitride as principal components, respectively. Also, the first barrier conductor film is thicker than the second barrier conductor film.

Abstract: An electronic apparatus having a substrate with a bottom gate p-channel type thin film transistor; a resist pattern over the substrate; and a light shielding film operative to block light having a wavelength shorter than 260 nm over at least a channel part of said thin film transistor.