Abstract: Microcapsules, comprising (A) in the range from 50 to 95 parts by weight, lipophilic core material which has a solid/liquid phase transition in the temperature range from ?20 to 120° C., (B) in the range from 4 to 50 parts by weight, capsule wall, and (C) in the range from 0.01 to 10 parts by weight, at least one colored or color-imparting substance selected from oil-soluble dyes and oil-soluble brighteners, where data in parts by weight are based on the total weight of the microcapsules in question.

Abstract: An apparatus for production of a clathrate hydrate with enhanced latent heat storing capability includes a gas supplier for supplying a gas to an aqueous solution containing a quaternary ammonium compound, and a cooler for cooling the aqueous solution, the apparatus producing the clathrate hydrate with enhanced latent heat storing capability including both the quaternary ammonium compound and the gas as guests by supplying the gas to the aqueous solution with the gas supplier in the stage of cooling with the cooler.

Abstract: A method for forming an organic mask, includes: permeating an organic solvent into an organic pattern formed on a base film and containing at least one kind of organic material, by contacting the organic pattern with the organic solvent; and thereby, partially or entirely decreasing original adhesion strength between the base film and the organic pattern. A heat treatment may be conducted after contacting to adjust the adhesion strength. Using the organic pattern as a mask, isotropic etching is conducted. As a result, a desired taper angle of the etched base film can be achieved with high accuracy. The taper angle of the etched base film is adjustable by controlling the adhesion strength through the heat treatment.

Abstract: A solution for forming a polishing slurry, the polishing slurry and related methods are disclosed. The solution for forming a polishing slurry may include 1H-benzotriazole (BTA) dissolved in an ionic surfactant such as a sodium alkyl sulfate solution, and perhaps a polyacrylic acid (PAA) solution. The solution can be filtered and used in a polishing slurry. This approach to solubilizing BTA results in a high BTA concentration in a polishing slurry without addition of foreign components to the slurry or increased safety hazard. In addition, the solution is easier to ship because it is very stable (e.g., can be frozen and thawed) and has less volume compared to conventional approaches. Further, the polishing slurry performance is vastly improved due to the removal of particles that can cause scratching.

Abstract: A manufacturing method of the present invention includes (a) a material preparation step of preparing a material containing lithium, manganese, and bismuth, and (b) a firing step of firing the material prepared by the material preparation step at a temperature of 830° C. to 1,000° C. In the material preparation step, the material is prepared such that the residual amount of bismuth in spinel-type lithium manganate yielded by the firing step is 0.01 mol % or less with respect to manganese.

Abstract: The present invention relates to lithium manganate particles having a primary particle diameter of 1 to 8 ?m and forming substantially single-phase particles, which have a composition represented by the following chemical formula: Li1+xMn2?x?yY1yO4+Y2 in which Y1 is at least one element selected from the group consisting of Ni, Co, Mg, Fe, Al, Cr and Ti; Y2 is P and is present in an amount of 0.01 to 0.6 mol % based on Mn; and x and y satisfy 0.03?x?0.15 and 0.05?y?0.20, respectively, and which lithium manganate particles have a specific surface area of the lithium manganate particles of 0.3 to 0.9 m2/g (as measured by BET method); and have an average particle diameter (D50) of the lithium manganate particles of 3 to 10 ?m. A positive electrode active substance of a lithium ion secondary battery using the lithium manganate particles of the present invention has a high output and is excellent in high-temperature stability.

Abstract: The present invention relates to lithium secondary batteries and more specifically to positive electrode materials operating at potentials greater than 2.8 V vs. Li+/Li in non-aqueous electrochemical cells. In particular, the invention relates to crystalline nanometric olivine-type LiFe1-xMxPO4 powder with M is Co and/or Mn, and 0<x<1, with small particle size and narrow particle size distribution. A direct precipitation process is described, comprising the steps of: providing a water-based mixture having at a pH between 6 and 10, containing a dipolar) aprotic additive, and Li(I), Fe(II), P(V), and Co(II) and/or Mn(II) as precursor components; heating said water-based mixture to a temperature less than or equal to its boiling point at atmospheric pressure, thereby precipitating crystalline LiFe1-xMxPO4 powder. An extremely fine particle size is obtained of about 80 nm for Mn and 275 nm for Co, both with a narrow distribution.

Abstract: The invention is related to a cathode material comprising particles having a lithium metal phosphate core and a pyrolytic carbon deposit, said particles having a synthetic multimodal particle size distribution comprising at least one fraction of micron size particles and one fraction of submicron size particles, said lithium metal phosphate having formula LiMPO4 wherein M is at least Fe or Mn. Said material is prepared by method comprising the steps of providing starting micron sized particles and starting submicron sized particles of at least one lithium metal phosphate or of precursors of a lithium metal phosphate; mixing by mechanical means said starting particles; making a pyrolytic carbon deposit on the lithium metal phosphate starting particles before or after the mixing step, and on their metal precursor before or after mixing the particles; optionally adding carbon black, graphite powder or fibers to the said lithium metal phosphate particles before the mechanical mixing.

Abstract: The present invention involves a process and materials for desulfurization of a gaseous stream comprising contacting the gas stream with a manganese aluminate catalyst. The manganese aluminate catalyst is preferably selected from the group consisting of Mn2xAl2O2x+3, Mn(2?y)(MnO)yAl2O(5?y), Mn(4?y)(MnO)yAl2O(7?y), Mn(6?y)(MnO)yAl2O(9?y), Mn(1?z)(MnO)zAlO(3?z) and intermediates thereof, wherein x?0.5, 0?y?2 and 0?z?1. Preferably, x is between 1 and 3.

Abstract: The present invention relates to a packaged particulate bleaching composition the composition comprising: a. from 1% to 30% by weight of a bleach activator, and b. from 10% to 80% by weight of an oxygen bleach, characterized in that the composition is packaged in a packaging system having a Moisture Vapour Transfer Rate of less than 0.1 g/m2/day as measured by ASTM Standard E-96-53T.

Abstract: The present invention relates to dielectrically positive liquid-crystalline media comprising one or more compounds of the formula I in which the parameters have the meaning indicated in the specification, and optionally one or more compounds selected from the group of the compounds of the formulae II and III in which the parameters have the meaning indicated in the specification, and optionally one or more compounds of the formula IV in which the parameters have the meaning indicated in the specification, and to liquid-crystal displays containing these media, especially to active-matrix displays and in particular to TN, IPS and FFS displays.

Abstract: The scintillator single crystal of the invention comprises a cerium-activated orthosilicate compound represented by the following formula (1). Gd2?(a+x+y+z)LnaLuxCeyLmzSiO5??(1) (In formula (1), Lm represents at least one element selected from among Pr, Tb and Tm, Ln represents at least one element selected from among lanthanoid elements excluding Pr, Tb and Tm, and Sc, and Y, a represents a value of at least 0 and less than 1, x represents a value of greater than 1 and less than 2, y represents a value of greater than 0 and no greater than 0.01, and z represents a value of greater than 0 and no greater than 0.01. The value of a+x+y+z is no greater than 2.

Abstract: There is provided a group III nitride semiconductor epitaxial substrate which has a suppressed level of threading dislocation in the vertical direction and excellent crystal quality, the group III nitride semiconductor epitaxial substrate including a substrate (1) for growing an epitaxial film; and an ELO layer (4) having a composition of AlxGa1-xN (0?x?1) formed either on top of the substrate (1) or on top of a group III nitride layer (2) formed on top of the substrate (1), wherein the ELO layer (4) is a layer formed by using a mask pattern (3), which is composed of carbon and is formed either on top of the substrate (1) or on top of the group III nitride layer (2).

Abstract: Exemplary embodiments of the present invention disclose inorganic luminescent substances with Eu2+-doped silicate luminophores, in which solid solutions in the form of mixed phases between alkaline earth metal oxyorthosilicates and rare earth metal oxyorthosilicates are used as base lattices for the Eu2+ activation leading to the luminescence. These luminophores are described by the general formula (1-x) MII3SiO5.xSE2SiO5:Eu, in which MII preferably represents strontium ion or another alkaline earth metal ion, or another divalent metal ion selected from the group consisting of the magnesium, calcium, barium, copper, zinc, and manganese. These ions may be used in addition to strontium and also as mixtures with one another.

Abstract: A phenanthrene derivative is represented by a formula (1) below. In the formula (1), Ar1 to Ar4 each represent an aromatic hydrocarbon ring group having 6 to 18 carbon atoms for forming the ring. The aromatic hydrocarbon ring group contains none of anthracene skeleton, pyrene skeleton, aceanthrylene skeleton and naphthacene skeleton. L represents a single bond, a substituted or unsubstituted benzene skeleton, naphthalene skeleton, biphenylene skeleton, fluorene skeleton, phenanthrene skeleton, fluoranthene skeleton, triphenylene skeleton, chrysene skeleton, phenyl-naphthalene skeleton or binaphthalene skeleton. R1 and R2 each represent a substituent, the number of which may be 0, 1 or more. R1 and R2 may be bonded in any positions of the phenanthrene skeleton. m, n, l and p each represent 0 or 1 while satisfying m+n+l+p?1 (m,n?l,p). a and b each represent an integer of 0 to 8.

Abstract: A method of producing synthesis gas is provided. A reactor vessel having a single reaction zone is provided. A catalyst is placed in the single reaction zone. A feed stream is introduced into the single reaction zone, the feed stream comprising a hydrocarbon gas and an oxygen-containing gas. The hydrocarbon gas and the oxygen-containing gas are reacted in the single reaction zone to form a synthesis gas. The synthesis gas is withdrawn from the single reaction zone in a synthesis gas stream.

Abstract: An anisotropic conductive film 2 contains electrically conductive particles 6 dispersed in an adhesive agent 30 for electrode connection, the adhesive agent containing an epoxy resin, which is an insulating thermosetting resin, as a main component, a phenoxy resin having a molecular weight of 30,000 or more, a latent hardener, a polyvinyl butyral resin having a glass-transition temperature of 100° C. or higher, and a polyvinyl butyral resin having a glass-transition temperature of 90° C. or lower. There is provided the high-heat-resistant anisotropic conductive film which suppresses a reduction in repairability and which can be used for electrodes having a finer pitch, i.e., having a minimum pitch of 150 ?m or less, when electrodes are connected with the anisotropic conductive film.

Abstract: A copper-carbon composition including copper and carbon, wherein the copper and the carbon form a single phase material, and wherein the carbon does not phase separate from the copper when the material is heated to a melting temperature.

Abstract: Disclosed are a polyphenylene-ether-based thermoplastic resin composition that includes: (A) a mixed resin of (A-1) a polyphenylene-ether-based resin and (A-2) a polyamide resin; (B) a styrene-based copolymer resin; (C) a conductive additive; and (D) mica, a method of preparing the same, and a molded product using the same.

Abstract: Single pellets of a thermoplastic resin containing long glass fibers and a conductive filler are set forth that enable molded articles made from these pellets to exhibit conductivity and, at the same time, high mechanical properties. These pellets have mechanical properties that are substantially equivalent to non-conductive pellets of a thermoplastic resin containing same loading of long glass and provide conductivity that is substantially equivalent to articles obtained by blending two kinds of pellets, one pellet having a conductive filler and the other pellet one containing long glass fibers. The pellets include a thermoplastic resin, a long fiber reinforcing filler and a conductive additive dispersed in the pellet.

Abstract: An aqueous solution containing a polymer dispersant and a metal compound, and an aqueous solution of a reducing agent, are joined together and uniformly mixed while being subjected to reduction reaction to give metal microparticles, in a thin film fluid formed between processing surfaces arranged to be opposite to each other so as to be able to approach to and separate from each other, at least one of which rotates relative to the other, by using a reaction apparatus of uniform stirring and mixing the above aqueous solutions.

Abstract: A conductive particle 8a comprising a core particle 11, a palladium layer 12 coating the core particle 11 and having a thickness of 200 ? or larger, and an insulating particle 1 arranged on the surface of the palladium layer 12 and having a particle diameter larger than the thickness of the palladium layer 12.

Abstract: Disclosed are a sintered body and a thermoelectric conversion material. The sintered body comprises a manganese-based oxide as a main component and the sintered body has a relative density of 90% or more and an average of the size of particles constituting the sintered body is 3 ?m or less.

Abstract: An inkjet ink comprising an IR-absorbing dye of formula (A): wherein M is selected from the group consisting of: Si(A1)(A2), Ge(A1)(A2), Ga(A1), Mg, Al(A1), TiO, Ti(A1)(A2), ZrO, Zr(A1)(A2), VO, V(A1)(A2), Mn, Mn(A1), Fe, Fe(A1), Co, Ni, Cu, Zn, Sn, Sn(A1)(A2), Pb, Pb(A1)(A2), Pd and Pt; Al and A2 are axial ligands, which may be the same or different, and are selected from the group consisting of: —OH, halogen and —OR3; R1 and R2 may be the same or different and are selected from the group consisting of: hydrogen, hydroxyl, C1-12 alkyl, C1-12 alkoxy, amino, C1-12 alkylamino, di(C1-12 alkyl)amino, halogen, cyano, thiol, C1-12 alkylthio, nitro, carboxy, C1-12 alkylcarbonyl, C1-12 alkoxycarbonyl, C1-12 alkylcarbonyloxy and C1-12 alkylcarbonylamino; R3 is a selected from the group consisting of: C1-12 alkyl, C5-12 aryl, C5-12 arylalkyl and Si(Rx)(Ry)(Rz); Rx, Ry and Rz may be the same or different and are selected from C1-12 alkyl, C5-12 aryl, C5-12 arylalkyl, C1-12 alkoxy, C5-12 aryloxy or C5-12 arylalkoxy;

Abstract: Compounds are disclosed for the production of chemiluminescent light, particularly for the production of blue/violet light within the range of about 390 nm to less than 438 nm, and most particularly to the use of compounds composed of symmetrically and asymmetrically substituted anthracenes which are effective for increasing the production of such blue/violet light when used as fluorescers in conjunction with chemiluminescent systems. These systems utilize derivatives of 9,10-diphenylanthracene containing one or more fluorines As shown in General Formulae 1-3. The variables shown in Formulae 1-3 are defined in the specification.

Abstract: An adjustable length jacking column for supporting a cutting or drilling tool between spaced apart surfaces is disclosed. A speed drive serves to quickly adjust the column sections to an intermediate position closely corresponding to the distance between the spaced apart surfaces. A selectively engageable screw drive is configured to shift the column sections from the intermediate position to a secured position, in which the column length corresponds to fixed securement between the surfaces. The screw drive is drivingly connected between the column sections to shift the column sections relative to one another when engaged, and is drivingly disconnected from at least one of the column sections when disengaged so as to avoid interfering with relative shifting of the column sections by the speed drive.

Abstract: An apparatus for pulling a cable through a conduit includes a frame that has a base. The apparatus further includes a boom that has at least one roller configured to guide a rope connected to the cable along the boom. The boom also includes a main boom pivotally connected to the base and an upper boom pivotally connected to the main boom. A drive unit connects to the boom and includes a rotatable spool configured to pull the rope along the boom. The apparatus further includes a lift pivotally connected to the frame and the boom. The lift is operable to move the boom relative to the frame.

Abstract: A woven structure includes at least two woven walls (11, 12) connected to one another by at least one unattached binding thread (13). The variation of the length between two consecutive sinkers of the at least one binding thread (13), each of the sinkers corresponding to a riser by a weft thread of a different wall (11, 12), is continuous on at least one portion of the structure in the direction of the warp and/or in the direction of the weft. This structure can be applied to the fields of aviation, shipping, household furnishings, and automobiles.

Abstract: A shock-absorbing fence comprises: a guard net provided in a stretched state between main posts provided to stand at a predetermined interval; a safety net attached between a skirt of the guard net and a ground; and a member joining an upper rim of the safety net to the skirt of the guard net as well as securing a lower rim of the safety net to the ground, the member including a horizontal support rope member provided along the lower rim of the safety net and a plurality of hillside support rope members connecting between a plurality of points of the horizontal support rope member and a plurality of hillside anchors, the safety net being allowed to deform in an extended manner following deflection and deformation of the guard net, while maintaining a gap below the guard net in a closed state, in case of rockfall.

Abstract: Some embodiments disclose a corral configured to hold one or more shopping carts and display one or more advertisements. The corral can include: (a) an enclosure having an opening configured to receive the one or more shopping carts, the enclosure having a first side; and (b) at least one first panel located at the first side and configured to display at least a first advertisement of the one or more advertisements. The advertising panels can be configured to be coupled adjacent the opening of the corral to facilitate better visibility.

Abstract: An attractive style fence system and method is presented that can be easily erected and disassembled by one person. The fence is based upon typical posts driven into the ground, where relatively posts are clad or covered by an outer post or shell, that can be in any suitable decorative form, such as a traditional post and rail fence. The outer posts and rails can be made from thermoplastics, increasing durability of the fence, and potentially reusing recycled materials.

Abstract: Methods and systems of using nanotube elements as joule heating elements for memories and other applications. Under one aspect, a method includes providing an electrical stimulus, regulated by a drive circuit, through a nanotube element in order to heat an adjacent article. Further, a detection circuit electrically gauges the state of the article. The article heated by the nanotube element is, in preferred embodiments, a phase changing material, hi memory applications, the invention may be used as a small-scale CRAM capable of employing small amounts of current to induce rapid, large temperature changes in a chalcogenide material. Under various embodiments of the disclosed invention, the nanotube element is composed of a non-woven nanotube fabric which is either suspended from supports and positioned adjacent to the phase change material or is disposed on a substrate and in direct contact with the phase change material.

Abstract: A method of making a memory cell or magnetic element by using two hard masks. The method includes first patterning a second hard mask to form a reduced second hard mask, with a first hard mask being an etch stop for the patterning process, and then patterning the first hard mask to form a reduced first hard mask by using the reduced second hard mask as a mask and using an etch stop layer as an etch stop. After patterning both hard masks, then patterning a functional layer by using the reduced first hard mask as a mask. In the resulting memory cell, the first hard mask layer is also a top lead, and the diameter of the first hard mask layer is at least essentially the same as the diameter of the etch stop layer, the adhesion layer, and the functional layer.

Abstract: A phase change memory device having an improved word line resistance and a fabrication method of making the same are presented. The phase change memory device includes a semiconductor substrate, a word line, an interlayer insulation film, a strapping line, a plurality of current paths, a switching element, and a phase change variable resistor. The word line is formed in a cell area of the semiconductor substrate. The interlayer insulation film formed on the word line. The strapping line is formed on the interlayer insulation film such that the strapping line overlaps on top of the word line. The current paths electrically connect together the word line with the strapping line. The switching element is electrically connected to the strapping line. The phase change variable resistor is electrically connected to the switching element.

Abstract: A phase change memory device having a strain transistor and a method of making the same are presented. The phase change memory device includes a semiconductor substrate, a junction word line, switching diodes, and a strain transistor. The semiconductor substrate includes a cell area and a core/peri area. The junction word line is formed in the cell area of the semiconductor substrate and includes a strain stress supplying layer doped with impurities. The switching diodes are electrically coupled to the junction word line. The strain transistor is formed in the core/peri area of the substrate and acts as a driving transistor.

Abstract: A phase change memory device having partially confined heating electrodes capable of reducing thermal disturbances between adjacent memory cells is presented. The phase change memory device includes a plurality of active regions, a plurality of switching elements, a plurality of heating electrodes, and a plurality of phase change structure lines. The active regions being linear and parallel to each other. The switching elements are coupled to the active regions. The heating electrodes are on and coupled to the switching elements. The phase change structure lines are coupled to the heating electrodes such that the phase change structure lines are substantially vertical to the active regions. The phase change structure lines includes a plurality of plugs projecting downwards that couple to overlapped portions of the heating electrodes.

Abstract: A phase change memory apparatus is provided that includes a first electrode of a bar type having a trench formed on an active region of a semiconductor substrate, a second electrode formed in a bottom portion of the trench, and a bottom electrode contact formed on the second electrode.

Abstract: According to one embodiment, a variable resistance layer includes a mixture of a first compound and a second compound. The first compound includes carbon (C) as well as at least one element selected from a group of elements G1. The group of elements G1 consists of hydrogen (H), boron (B), nitrogen (N), silicon (Si), and titanium (Ti). The second compound includes at least one compound selected from a group of compounds G2. The group of compounds G2 consists of silicon oxide (SiO2), silicon oxynitride (SiON), silicon nitride (Si3N4), carbon nitride (C3N4), boron nitride (BN), aluminum nitride (AlN), aluminum oxide (Al2O3), and silicon carbide (SiC). Concentration of the first compound in the variable resistance layer is not less than 30 volume percent, and not more than 70 volume percent.

Abstract: A non-volatile memory device includes a plurality of pillars, where each of the plurality of pillars contains a non-volatile memory cell containing a steering element and a storage element and at least one of a top corner or a bottom corner of each of the plurality of pillars is rounded. A method of making non-volatile memory device includes forming a stack of device layers, and patterning the stack to form a plurality of pillars, where each of the plurality of pillars contains a non-volatile memory cell that contains a steering element and a storage element, and where at least one of top corner or bottom corner of each of the plurality of pillars is rounded.

Abstract: A field effect transistor device includes: a reservoir bifurcated by a membrane of three layers: two electrically insulating layers; and an electrically conductive gate between the two insulating layers. The gate has a surface charge polarity different from at least one of the insulating layers. A nanochannel runs through the membrane, connecting both parts of the reservoir. The device further includes: an ionic solution filling the reservoir and the nanochannel; a drain electrode; a source electrode; and voltages applied to the electrodes (a voltage between the source and drain electrodes and a voltage on the gate) for turning on an ionic current through the ionic channel wherein the voltage on the gate gates the transportation of ions through the ionic channel.

Abstract: A device includes a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region and a plurality of layer pairs disposed within one of the n-type region and the p-type region. Each layer pair includes an InGaN layer and pit-filling layer in direct contact with the InGaN layer. The pit-filling layer may fill in pits formed in the InGaN layer.

Abstract: An optical semiconductor device is disclosed including an active region including an active layer and a diffraction grating having a ?/4 phase shift; passive waveguide regions each including a passive waveguide and a diffraction grating, disposed on the side of an emission facet and on the side of a rear facet sandwiching the active region between the passive waveguide regions, respectively; and an anti-reflection coating applied on the emission facet, wherein the passive waveguide region on the side of the emission facet has a length shorter than a length of the passive waveguide region on the side of the rear facet side.

Abstract: Disclosed is a method for producing core-shell nanowires in which an insulating film is previously patterned to block the contacts between nanowire cores and nanowire shells. According to the method, core-shell nanowires whose density and position is controllable can be produced in a simple manner. Further disclosed are nanowires produced by the method and a nanowire device comprising the nanowires. The use of the nanowires leads to an increase in the light emitting/receiving area of the device. Therefore, the device exhibits high luminance/efficiency characteristics.

Abstract: Techniques for ultra-sensitive detection are provided. In one aspect, a detection device is provided. The detection device comprises a source; a drain; a nanowire comprising a semiconductor material having a first end clamped to the source and a second end clamped to the drain and suspended freely therebetween; and a gate in close proximity to the nanowire.

Abstract: The present invention relates to a single electron transistor operating at room temperature and a manufacturing method for same. More particularly, the present invention relates to a single electron transistor operating at room temperature, in which a quantum dot or a silicide quantum dot using a nanostructure is formed and a gate is positioned on the quantum dot so as to minimize influence on a tunneling barrier and achieve improved effectiveness in electric potential control for the quantum dot and operating efficiency of the transistor, and a manufacturing method for same.

Abstract: The present disclosure provides an apparatus and method for implementing a high hole mobility p-channel Germanium (“Ge”) transistor structure on a Silicon (“Si”) substrate. One exemplary apparatus may include a buffer layer including a GaAs nucleation layer, a first GaAs buffer layer, and a second GaAs buffer layer. The exemplary apparatus may further include a bottom barrier on the second GaAs buffer layer and having a band gap greater than 1.1 eV, a Ge active channel layer on the bottom barrier and having a valence band offset relative to the bottom barrier that is greater than 0.3 eV, and an AlAs top barrier on the Ge active channel layer wherein the AlAs top barrier has a band gap greater than 1.1 eV. Of course, many alternatives, variations and modifications are possible without departing from this embodiment.

Abstract: An optoelectronic device is disclosed. The device comprises one or more modified photocatalytic units, and a semiconductor surface. The modified photocatalytic unit is attached to the semiconductor surface such that when light is absorbed by the photocatalytic unit, an electric field is generated at sufficient amount to induce charge carrier locomotion within the semiconductor. In some embodiments a plurality of photocatalytic unit is attached to the semiconductor surface in oriented manner. The optoelectronic device can be operative in dry environment.

Abstract: A method and device in which the light emitted from a color sub-pixel in an organic light emitted display panel can be the sum of two or more light beams of slightly different colors in the same wavelength range. The difference in color is the result of difference in the length of the resonant cavity within the same color sub-pixel. In the manufacturing process, the non-uniformity in the layer thickness can cause a shift in the color coordinates in the color sub-pixels. The color shift when the width of the color spectrum is narrow is more noticeable. By broadening the width of the color spectrum, the color shift would become less appreciable. Thus, broadening the width of the color spectrum would ease the strict requirements in manufacturing.

Abstract: In OLEDs, improved efficiency is obtained by novel compounds which can form inter alia electron injection layers of the formula (I) wherein R1 is a 1-5 ring aryl (including polycyclic), aralkyl or heteroaryl group which is optionally substituted with one or more C1-C4 alkyl, alkoxy or cyano; R2 and R3 together form a 1-5 ring aryl (including polycyclic), aralkyl or heteroaryl group which is optionally substituted with C1-C4 alkyl, alkoxy or cyano; R4 is hydrogen, C1-C4 alkyl or aryl; and Ar is monocyclic, bicyclic or tricyclic aryl or heteroaryl which is optionally substituted with one or more C1-C4-alkyl or alkoxy groups, or an oligomer thereof.

Abstract: The present invention provides a new bipyridine derivative which is suitable for an electron transport material of an organic electronics element and which has bipyridyl central rings as a core, and further provides an organic electroluminescence element containing the derivative. The bipyridine derivative is expressed by the following general formula. (where A1, A2: represent an aromatic heterocyclic group (except for a carbazolyl group) and an aromatic hydrocarbon group and the aromatic heterocyclic group may be combined; a, b=1 or 2; Ar1, Ar2: represent a divalent or trivalent aromatic hydrocarbon group which may be substituted by hydrogen atom, an alkyl group, a cycloalkyl group, or an alkoxy group; B1, B2: represent hydrogen atom, an alkyl group, a cycloalkyl group, an alkoxy group, an aromatic hydrocarbon group, or an aromatic heterocyclic group; and ring E1, ring E2: represent a pyridine ring, and may have hydrogen atom, an alkyl group, a cycloalkyl group, or an alkoxy group.