Abstract: Variable resistance memory compositions and devices exhibiting superior data retention characteristics at elevated temperature. The compositions are composite materials that include a variable resistance component and an inert component. The variable resistance component may include a phase-change material and the inert component may include a dielectric material. The phase-change material may include Ge, Sb, and Te, where the atomic concentration of Sb is between 3% and 16% and/or the Sb/Ge ratio is between 0.07 and 0.68 and/or the Ge/Te ratio is between 0.6 and 1.1 and/or the concentration of dielectric component (expressed as the sum of the atomic concentrations of the constituent elements thereof) is between 5% and 50%. The compositions exhibit high ten-year data retention temperatures and long data retention times at elevated temperatures.

Abstract: A method is provided to duplicate a custom coating composition. A laminate strip is die cut to form a bi-layer transparent labels on a backing strip. Each label includes a backing of release adhesive. The transparent labels are applied to cover indicia on a container of a custom composition coating.

Abstract: The present invention provides a process of solidifying a phosphoric ester-based flame retardant in which high-level purification is not required and stress load is not employed. In the process of solidifying a phosphoric ester-based flame retardant, a seed crystal is added at a temperature of not higher than 55° C. and at an amount of 1 to 50 parts by mass with respect to 100 parts by mass of a phosphoric ester compound in a molten state, which compound is represented by the following Formula (I): (wherein, R1 and R2 each independently represent a hydrogen atom or a methyl group; and n represents a number of 1 to 5). It is preferred that the amount of the phosphoric ester compound represented by the aforementioned Formula (I) wherein n is 1 be less than 90% by mass and that R1 and R2 be a hydrogen atom.

Abstract: Chemical light producing systems and the chemiluminescent formulations contained therein are taught which exhibit reduced hydrolysis and thereby are characterized by an inherently long shelf-life and commercial viability. By replacing the typical oxalate ester, e.g. (bis{3,4,6-trichloro-2-[(pentoxy)carbonyl]phenyl}oxalate) with a branched chain oxalic acid ester represented by the general formula: wherein the group designated as R contains from 4-15 carbons, wherein the carbon of attachment of R to the oxygen is via a primary carbon, and wherein substructure A is composed of substituents selected from the group including alkyl chains, alkyl rings, aromatic rings and combinations thereof such that R is nonlinear, water hydrolysis of the oxalate ester is retarded. This retardation of the hydrolysis changes the storage constraints of the oxalate ester.

Abstract: A device for use with a conduit having a first conduit end and a conduit second end, into which conduit a cable can be installed using a flow of air into the first conduit end, the device being suitable for confirming that the flow of air is exiting the second conduit end, the device including a housing, means to enable connection of the device to the second conduit end, a light source, a detector arranged to detect a presence or absence of a light signal, and a light shield, wherein in use, the flow of air entering the device causes the light shield and at least one of the light source or the detector, to move to and to stay at a position relative to the other, permitting the detector to detect detections including one or more of a presence or absence of the light signal, an intensity level of the light signal, a change in the presence or absence of the light signal, or a change in the intensity level of the light signal.

Abstract: The invention provides a lifting system that decreases the amount of energy used while lifting luggage from the ground in a variety of locations. According to the invention, a lifting system operates on a regenerative braking mechanism that provides for recharging the battery of the lifting system using energy created from rotational force generated by the lowering of an arm of the lifting system.

Abstract: Metal roadway safety barrier formed by a series of horizontal rails, girders or fences (1) mounted on vertical posts (2) by means of a “breakable” joining mechanism (3) which provides said joint with the possibility of disengaging in a controlled manner when the level of the force transmitted thereto, following the impact of a vehicle, reaches a given value. The “breakable” joint is formed by a screw (3) which has along its shank, at a certain distance from its head, a cross-section of lesser mechanical strength. In an alternative embodiment, the “breakable” joint is formed by means of a “breakable” washer.

Abstract: A plurality of bipolar transistors are formed by forming a common conduction region, a plurality of control regions extending each in an own active areas on the common conduction region, a plurality of silicide protection strips, and at least one control contact region. Silicide regions are formed on the second conduction regions and the control contact region. The second conduction regions may be formed by selectively implanting a first conductivity type dopant areas on a first side of selected silicide protection strips. The control contact region is formed by selectively implanting an opposite conductivity type dopant on a second side of the selected silicide protection strips.

Abstract: Cross point memory arrays with CBRAM and RRAM stacks are presented. A cross point memory array includes a first group of substantially parallel conductive lines and a second group of substantially parallel conductive lines, oriented substantially perpendicular to the first group of substantially parallel conductive lines. An array of memory stack is located at the intersections of the first group of substantially parallel conductive lines and the second group of substantially parallel conductive lines, wherein each memory stack comprises a conductive bridge memory element in series with a resistive-switching memory element.

Abstract: The present invention relates to a light-emitting device using a clad layer consisting of asymmetric units, wherein the clad layer is provided by repeatedly stacking a unit having an asymmetric energy bandgap on upper and lower portions of an active layer, and the inflow of both electrons and holes into the active layer is arbitrarily controlled through the clad layer, so that the internal quantum efficiency can be improved. The light-emitting device using the clad layer consisting of the asymmetric units according to the present invention is characterized in that the clad layer is provided on at least one of the upper and lower portions of the active layer and consists of one or plural units, wherein the unit has a structure in which the first to nth unit layers (n is a natural number equal to or greater than three) having different energy bandgaps are sequentially stacked and has an asymmetric energy band diagram.

Abstract: A nanoparticle complex, including a semiconductor nanocrystal; and a metal complex ligand on the surface of the semiconductor nanocrystal. The nanoparticle complex may further include a polymer shell contacting the metal complex ligand.

Abstract: A quantum device is provided that includes controllably quantum mechanically coupled dangling bonds extending from a surface of a semiconductor material. Each of the controllably quantum mechanically coupled dangling bonds has a separation of at least one atom of the semiconductor material. At least one electrode is provided for selectively modifying an electronic state of the controllably quantum mechanically coupled dangling bonds. By providing at least one additional electron within the controllably quantum mechanically coupled dangling bonds with the proviso that there exists at least one unoccupied dangling bond for each one additional electron present, the inventive device is operable at least to 293 degrees Kelvin and is largely immune to stray electrostatic perturbations. Room temperature operable quantum cellular automata and qubits are constructed therefrom.

Abstract: Electronic devices, such as organic thin film transistors, with improved mobility are disclosed. The semiconducting layer comprises layers or striations of an organic semiconductor and graphene, including alternating layers/striations of such materials. The organic semiconductor and graphene layers interact well together because both materials form lamellar sheets. The presence of graphene enhances mobility by correcting molecular packing defects in the organic semiconductor layers, and the conductivity of graphene can be controlled. Finally, both materials are flexible, allowing for flexible semiconductor layers and transistors.

Abstract: Disclosed herein is an organic light emitting diode lighting apparatus and a method for manufacturing the same. The organic light emitting diode lighting apparatus may include a transparent substrate main body having a plurality of groove lines formed thereon, an auxiliary electrode formed in at least one of the plurality of groove lines, a first electrode formed on the substrate main body so as to contact the auxiliary electrode, an organic emission layer formed on the first electrode and a second electrode formed on the organic emission layer.

Abstract: A polymer and an organic light-emitting device including the polymer. An example of the polymer is wherein in Formula 1, Ar1 is each independently represented by —(Q1)n—, and Q1 is selected from the group consisting of a substituted or unsubstituted C5-C30 arylene group, a substituted or unsubstituted C4-C30 heteroarylene group, a substituted or unsubstituted C2-C30 alkenylene group, and a group represented by —N(Z1)—, and n is an integer from 1 to 10, and n groups of Q1 in -(Q1)n- is identical to or different from each other, and X1 and X2 are each independently selected from the, group consisting of —O—, —S—, —N(Z2)—, and —C(Z3)(Z4)—.

Abstract: An organic light-emitting device including a first electrode and a first layer, wherein the first electrode includes a first element-containing zinc oxide layer and the first layer includes a cyano group-containing compound.

Abstract: A condensed-cyclic compound represented by Formula 1 below and an organic light emitting diode including the condensed-cyclic compound:

Abstract: An organic light emitting diode display includes a substrate, a first conductive layer disposed on the substrate, a second conductive layer formed on the first conductive layer, a third conductive layer formed on the first conductive layer or the second conductive layer. A first electrode disposed on the substrate at a display area, the first electrode including at least the first conductive layer, the second conductive layer, and the third conductive layer. An organic emissive layer is disposed on the first electrode. A second electrode is formed on the organic emissive layer. A pad is disposed on the substrate at a pad area neighboring the display area. The pad has the first conductive layer and the third conductive layer surrounding the lateral side of the first conductive layer.

Abstract: An organic light-emitting device including a substrate; a first electrode on the substrate; a second electrode; an organic layer between the first electrode and the second electrode, the organic layer including an emission layer; and a first layer including a cyano group-containing compound, the first layer being between the first electrode and the emission layer, wherein the first electrode includes an Al-based reflective layer and a transparent conductive layer sequentially stacked on the substrate, the Al-based reflective layer including a first element and nickel (Ni), and the first element includes at least one of lanthanum (La), cerium (Ce), praseodymium (Pr), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), and lutetium (Lu).

Abstract: An OLED including an electron transport layer having multi-layered structure and a method of manufacturing the same, the method including simultaneously reciprocating first and second deposition sources that include different deposition materials, across a substrate.

Abstract: The present invention disclosed an organic thin film transistor, an organic thin film transistor array substrate and an organic thin film transistor display. The present invention disclosed organic materials which is proper for the application to a large screen display. The presentation also disclosed structures and a method for manufacturing such an organic thin film transistor, the organic thin film transistor array substrate and the organic thin film transistor display.

Abstract: A bottom-contact type organic thin film transistor comprising at least a gate electrode, an insulator layer, a source electrode, a drain electrode and an organic semiconductor layer, on a substrate, wherein at least one of the source electrode and the drain electrode has a multilayer structure formed by stacking an oxide layer and a metal layer, and the metal layer is surface-modified with an organic thin film layer.

Abstract: A thin film transistor for an organic light emitting display device is disclosed. In one embodiment, the thin film transistor includes: a substrate, an active layer formed over the substrate, wherein the active layer is formed of an oxide semiconductor, a gate insulating layer formed over the substrate and the active layer, and source and drain electrodes formed on the gate insulating layer and electrically connected to the active layer. The transistor may further include a gate electrode formed on the gate insulating layer and formed between the source and drain electrodes, wherein the gate electrode is spaced apart from the source electrode so as to define a first offset region therebetween, and wherein the gate electrode is spaced apart from the drain electrode so as to define a second offset region therebetween.

Abstract: It is an object to provide a semiconductor device having a new productive semiconductor material and a new structure. The semiconductor device includes a first conductive layer over a substrate, a first insulating layer which covers the first conductive layer, an oxide semiconductor layer over the first insulating layer that overlaps with part of the first conductive layer and has a crystal region in a surface part, second and third conductive layers formed in contact with the oxide semiconductor layer, an insulating layer which covers the oxide semiconductor layer and the second and third conductive layers, and a fourth conductive layer over the insulating layer that overlaps with part of the oxide semiconductor layer.

Abstract: An object is to provide an oxide semiconductor layer having a novel structure which is preferably used for a semiconductor device. Alternatively, another object is to provide a semiconductor device using an oxide semiconductor layer having the novel structure. An oxide semiconductor layer includes an amorphous region which is mainly amorphous and a crystal region containing crystal grains of In2Ga2ZnO7 in a vicinity of a surface, in which the crystal grains are oriented so that the c-axis is almost vertical with respect to the surface. Alternatively, a semiconductor device uses such an oxide semiconductor layer.

Abstract: An object is to provide a light-emitting display device in which a pixel including a thin film transistor using an oxide semiconductor has a high aperture ratio. The light-emitting display device includes a plurality of pixels each including a thin film transistor and a light-emitting element. The pixel is electrically connected to a first wiring functioning as a scan line. The thin film transistor includes an oxide semiconductor layer over the first wiring with a gate insulating film therebetween. The oxide semiconductor layer is extended beyond the edge of a region where the first wiring is provided. The light-emitting element and the oxide semiconductor layer overlap with each other.

Abstract: In a channel protected thin film transistor in which a channel formation region is formed using an oxide semiconductor, an oxide semiconductor layer which is dehydrated or dehydrogenated by a heat treatment is used as an active layer, a crystal region including nanocrystals is included in a superficial portion in the channel formation region, and the rest portion is amorphous or is formed of a mixture of amorphousness/non-crystals and microcrystals, where an amorphous region is dotted with microcrystals. By using an oxide semiconductor layer having such a structure, a change to an n-type caused by entry of moisture or elimination of oxygen to or from the superficial portion and generation of a parasitic channel can be prevented and a contact resistance with a source and drain electrodes can be reduced.

Abstract: By using a conductive layer including Cu as a long lead wiring, increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the oxide semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased.

Abstract: It is an object to provide a semiconductor device typified by a display device having a favorable display quality, in which parasitic resistance generated in a connection portion between a semiconductor layer and an electrode is suppressed and an adverse effect such as voltage drop, a defect in signal wiring to a pixel, a defect in grayscale, and the like due to wiring resistance are prevented. In order to achieve the above object, a semiconductor device according to the present invention may have a structure where a wiring with low resistance is connected to a thin film transistor in which a source electrode and a drain electrode that include metal with high oxygen affinity are connected to an oxide semiconductor layer with a suppressed impurity concentration. In addition, the thin film transistor including the oxide semiconductor may be surrounded by insulating films to be sealed.

Abstract: An object is to reduce contact resistance between an oxide semiconductor layer and source and drain electrode layers electrically connected to the oxide semiconductor layer in a thin film transistor including the oxide semiconductor layer. The source and drain electrode layers have a stacked structure of two or more layers. In this stack of layers, a layer in contact with the oxide semiconductor layer is a thin indium layer or a thin indium-alloy layer. Note that the oxide semiconductor layer contains indium. A second layer or second and any of subsequent layers in the source and drain electrode layers are formed using an element selected from Al, Cr, Cu, Ta, Ti, Mo, and W, an alloy containing any of these elements as a component, an alloy containing any of these elements in combination, or the like.

Abstract: An object is to provide a thin film transistor including an oxide semiconductor layer, in which a material used for the oxide semiconductor layer and a material used for source and drain electrode layers are prevented from reacting with each other. The source and drain electrode layers provided over a substrate having an insulating surface have a stacked structure of two or more layers. In the stack of layers, a layer which is in contact with an oxide semiconductor layer is a metal layer including a metal element other than a metal element included in the oxide semiconductor layer. An element selected from Sn, Sb, Se, Te, Pd, Ag, Ni, and Cu; an alloy containing any of these elements as a component; an alloy containing any of these elements in combination; or the like is used for a material of the metal layer used.

Abstract: Disclosed is a highly reliable semiconductor device and a manufacturing method thereof, which is achieved by using a transistor with favorable electrical characteristics and high reliability as a switching element. The semiconductor device includes a driver circuit portion and a pixel portion over one substrate, and the pixel portion comprises a light-transmitting bottom-gate transistor. The light-transmitting bottom-gate transistor comprises: a transparent gate electrode layer; an oxide semiconductor layer over the gate electrode layer, a superficial layer of the oxide semiconductor layer including comprising a microcrystal group of nanocrystals; and source and drain electrode layers formed over the oxide semiconductor layer, the source and drain electrode layers comprising a light-transmitting oxide conductive layer.

Abstract: An object is to provide a thin film transistor having favorable electric characteristics and a semiconductor device including the thin film transistor as a switching element. The thin film transistor includes a gate electrode formed over an insulating surface, a gate insulating film over the gate electrode, an oxide semiconductor film which overlaps with the gate electrode over the gate insulating film and which includes a layer where the concentration of one or a plurality of metals contained in the oxide semiconductor is higher than that in other regions, a pair of metal oxide films formed over the oxide semiconductor film and in contact with the layer, and a source electrode and a drain electrode in contact with the metal oxide films. The metal oxide films are formed by oxidation of a metal contained in the source electrode and the drain electrode.

Abstract: One of objects is to provide a semiconductor device with stable electric characteristics, in which an oxide semiconductor is used. The semiconductor device includes a thin film transistor including an oxide semiconductor layer, and a silicon oxide layer over the thin film transistor. The thin film transistor includes a gate electrode layer, a gate insulating layer whose thickness is equal to or larger than 100 nm and equal to or smaller than 350 nm, the oxide semiconductor layer, a source electrode layer and a drain electrode layer. In the thin film transistor, the difference of the threshold voltage value is 1 V or less between before and after performance of a measurement in which the voltage of 30 V or ?30 V is applied to the gate electrode layer at a temperature of 85° C. for 12 hours.

Abstract: Provided are a method of manufacturing a transparent N-doped p-type ZnO semiconductor layer using a surface chemical reaction between precursors containing elements constituting thin layers, and a thin film transistor (TFT) including the p-type ZnO semiconductor layer. The method includes the steps of: preparing a substrate and loading the substrate into a chamber; injecting a Zn precursor and an oxygen precursor into the chamber, and causing a surface chemical reaction between the Zn precursor and the oxygen precursor using an atomic layer deposition (ALD) technique to form a ZnO thin layer on the substrate; and injecting a Zn precursor and an nitrogen precursor into the chamber, and causing a surface chemical reaction between the Zn precursor and the nitrogen precursor to form a doping layer on the ZnO thin layer.

Abstract: A ZnO-containing semiconductor layer contains Se added to ZnO and has an emission peak wavelength of ultraviolet light and an emission peak wavelength of visual light. By combining the ZnO-containing semiconductor layer with phosphor or a semiconductor which is excited by the emitted ultraviolet light and emits visual light, visual light at various wavelengths can be emitted.

Abstract: A thin film transistor (TFT) and a method of fabricating the same are disclosed. The TFT includes a substrate, a gate electrode disposed over the substrate, a gate insulating layer disposed over the gate electrode, a semiconductor layer disposed over the gate insulating layer and including a polycrystalline silicon (poly-Si) layer, an ohmic contact layer disposed over a predetermined region of the semiconductor layer, an insulating interlayer disposed over substantially an entire surface of the substrate including the ohmic contact layer, and source and drain electrodes electrically connected to the ohmic contact layer through contact holes formed in the interlayer insulating layer. A barrier layer is interposed between the semiconductor layer and the ohmic contact layer. Thus, when an off-current of a bottom-gate-type TFT is controlled, degradation of characteristics due to a leakage current may be prevented using a simple process.

Abstract: A semiconductor memory device has a plurality of word line provided on a semiconductor region, extending in a row direction, a plurality of bit lines provided in the semiconductor region, extending in a column direction, and a plurality of memory elements provided at intersections between the plurality of word lines and the plurality of bit lines. Each word line provides a first gate electrode in the corresponding memory element. A lower portion of a side surface of each word line in a direction parallel to an extending direction of the word line is perpendicular to a main surface of the semiconductor region. An upper portion of the side surface is inclined so that a width thereof becomes smaller toward a top thereof.

Abstract: The present invention relates to a thin-film transistor in a liquid crystal display device and a method of fabricating the same, and the thin-film transistor may be configured by including a first gate electrode formed on an insulating substrate; a first gate insulation film formed on the insulating substrate including the first gate electrode; an active layer formed on the first gate insulation film; source/drain electrodes formed on the active layer and arranged at both sides of the first gate electrode; a second gate insulation film formed on the active layer and the first gate insulation film including the source/drain electrodes and provided with a contact hole for exposing part of the drain electrode; a second gate electrode overlapped with the first gate electrode on the second gate insulation film; and a pixel electrode electrically connected to the drain electrode through the contact hole.

Abstract: An organic light emitting diode display that includes a first electrode arranged on a substrate, an organic emission layer arranged on the first electrode and a second electrode arranged on the organic emission layer, the first electrode includes a first layer, a second layer and a third layer stacked sequentially on the organic emission layer, the second layer has a lower work function than the third. Here, the second layer has a higher work function than that of the third layer.

Abstract: There are provided: a thin film transistor substrate provided with an amorphous transparent conductive film in which residue due to etching hardly occurs; a liquid crystal display device which utilizes the thin film transistor substrate; and a method for manufacturing a thin film transistor substrate in which the thin film transistor substrate can be efficiently obtained. Provided is a thin film transistor substrate in which there is provided a transparent substrate, on the transparent substrate there are formed a gate electrode, a semiconductor layer, a source electrode, a drain electrode, a transparent pixel electrode, and a transparent electrode, and the transparent pixel electrode is formed with a transparent conductive film and is electrically connected to the source electrode or the drain electrode, wherein the transparent conductive film which constitutes the transparent pixel electrode is composed of an indium oxide containing gallium.

Abstract: A display device capable of keeping the luminance constant irrespective of temperature change is provided as well as a method of driving the display device. A current mirror circuit composed of transistors is placed in each pixel. A first transistor and a second transistor of the current mirror circuit are connected such that the drain current of the first transistor is kept in proportion to the drain current of the second transistor irrespective of the load resistance value. The drain current of the first transistor is controlled by a driving circuit in accordance with a video signal and the drain current of the second transistor is caused to flow into an OLED, thereby controlling the OLED drive current and the luminance of the OLED.

Abstract: Active matrix display devices having improved opening and contrast ratios utilize light blocking lines to improve display contrast ratios yet position the light blocking lines on the same level of metallization as the gate lines to thereby limit parasitic capacitive coupling between the data lines and the pixel electrodes. The light blocking lines are also positioned on only one side of the data lines so that improvements in the display's opening ratio can also be achieved. The light blocking lines are preferably patterned so that no overlap occurs between a display's data lines and the light blocking lines. The elimination of overlap reduces the step height in the display's pixel electrodes and thereby reduces the extent of disclination of the liquid crystal molecules in the liquid crystal material extending opposite the pixel electrodes.

Abstract: A thin film transistor and a manufacturing method thereof are provided. An insulating pattern layer having at least one protrusion is formed on a substrate. Afterwards, at least one spacer and a plurality of amorphous semiconductor patterns separated from each other are formed on the insulating pattern layer. The spacer is formed at one side of the protrusion and connected between the amorphous semiconductor patterns. Later, the spacer and the amorphous semiconductor patterns are crystallized. Subsequently, the protrusion and the insulating pattern layer below the spacer are removed so that a beam structure having a plurality of corners is formed and suspended over the substrate. Then, a carrier tunneling layer, a carrier trapping layer and a carrier blocking layer are sequentially formed to compliantly wrap the corners of the beam structure. Hereafter, a gate is formed on the substrate to cover the beam structure and wrap the carrier blocking layer.

Abstract: A transistor may include a semiconductor drift layer of a first semiconductor material and a semiconductor channel layer on the semiconductor drift layer. The semiconductor channel layer may include a second semiconductor material different than the first semiconductor material. A semiconductor interconnection layer may be electrically coupled between the semiconductor drift layer and the semiconductor channel layer, and the semiconductor interconnection layer may include a third semiconductor material different than the first and second semiconductor materials. In addition, a control electrode may be provided on the semiconductor channel layer.

Abstract: The present invention is a base material for growing a single crystal diamond comprising: at least a single crystal SiC substrate; and an iridium film or a rhodium film heteroepitaxially grown on a side of the single crystal SiC substrate where the single crystal diamond is to be grown. As a result, there is provided a base material for growing a single crystal diamond and a method for producing a single crystal diamond substrate which can grow the single crystal diamond having a large area and good crystallinity and produce a high quality single crystal diamond substrate at low cost.

Abstract: A donor substrate for laser induced thermal imaging and a method of fabricating an organic light emitting diode (OLED) using the donor substrate are disclosed. In one embodiment, the donor substrate includes a base film, a light-to-heat conversion layer formed on the base film, a buffer layer formed on the light-to-heat conversion layer, and a transfer layer formed on the buffer layer. The buffer layer is formed of magnesium (Mg), an Mg alloy, or magnesium oxide. In the donor substrate for laser induced thermal imaging, the buffer layer is formed between the interlayer and the transfer layer or between the light-to-heat conversion layer and the transfer layer, so that surface characteristics between the donor substrate and the transfer layer can be improved.

Abstract: An organic light emitting diode display includes a display substrate including organic light emitting diodes and a pixel defining layer having openings for defining respective light emitting regions of the organic light emitting diodes, an encapsulation substrate disposed to face the display substrate, a sealant disposed along the edge of the encapsulation substrate and bonding and sealing the display substrate and the encapsulation substrate together, and a filling material for filling the space between the display substrate and the encapsulation substrate. The pixel defining layer is divided into a plurality of deposit regions having a relatively small height and that are uniformly distributed, and a diffusion region surrounding the plurality of deposit regions and having a larger height than that of the plurality of deposit regions.

Abstract: An organic light emitting diode (OLED) display includes a substrate, a first electrode on the substrate, an emission layer on the first electrode, and a second electrode on the emission layer, the second electrode including a transflective conductive layer and a conductive oxide layer.

Abstract: An active device array substrate including a substrate, a plurality of scan lines, a plurality of data lines, a plurality of active devices, a first passivation layer, a transparent pad layer, a plurality of color filter patterns, a second passivation layer, a plurality of pixel electrodes, and a black matrix layer is provided. Each of the active devices is electrically connected to one of the scan lines and one of the data lines, respectively. The transparent pad layer having a plurality of openings for accommodating the color filter patterns is disposed on the first passivation layer located above the scan lines and the data lines. The first passivation layer, the color filter patterns and the second passivation layer have a plurality of contact windows therein. The black matrix layer is disposed above the transparent pad layer to cover a portion of the pixel electrodes.