Abstract: A method for sintering lithium contained electrode material includes: depositing a mixture of a particle like lithium compound and a substance M in a metal container, where M is a chemical element selected from a group consisting of iron (Fe), phosphor (P), cobalt (Co), nickel (Ni), manganese (Mn), vanadium (V), and carbon (C), or an oxide or compound thereof; subjecting the mixture deposited in the metal container to heat treatment by heating the metal container in two phases of which temperature ranges for heating are respectively 300-700° C. and 500-900° C.; and grinding the mixture so heat-treated to obtain a powder like lithium contained electrode material. According to the method of the present invention, in the process of sintering and synthesis, it is not necessary to supply an external (or a great amount of) protective gas, so that substantial reduction of processing cost and time is realized.

Abstract: The present disclosure relates to a cathode active material for lithium battery including a metal oxide represented by a formula of LiNi0.5Mn0.5-x-yCoxMgyO2, wherein 0.05?x?0.15 and 0.01?y?0.1. The present disclosure also relates to a method for making a cathode active material including steps of dissolving Ni, Mn, Co, and Mg sources to the liquid solvent at a molar ratio of Ni/Mn/Co/Mg=0.5/(0.5?x?y)/x/y, wherein 0.05?x?0.15, and 0.01?y?0.1 to achieve a liquid solution, adding a precipitant into the liquid solution, to achieve a coprecipitation, separating the coprecipitation from the liquid solution, and heating the coprecipitation mixed with a Li source at a temperature of about 600° C. to about 900° C.

Abstract: A mixed transition metal oxide is provided described wherein Aluminum is partially substituted for Cobalt in a Li[NixCoyMnz]O2 composition wherein the resulting aluminum substituted product Li[Ni0.4Co0.2-yAlyMn0.4]O2 is less costly than the parent product, is safer to use, and provides enhanced electrochemical performance as a cathode material for use in Lithium-ion based batteries.

Abstract: The present invention discloses a high compact density nickel-cobalt-manganese multi-element lithium ion battery cathode material with dopants and methods of its preparation. A preparation method of this battery cathode material is as follows: (A) preparing a nickel-cobalt-manganese multi-element intermediate with dopants by co-precipitation or chemical synthesis; (B) preparing a mixture by mixing said multi-element intermediate with a lithium salt; (C) pre-treating the said mixture, then adding into it polyvinyl alcohol and mixing uniformly; (D) pressing the resulting material into lumps, calcining the lumps at 800˜950° C., cooling after its removal from the furnace, crushing, passing through a 400 mesh sieve; (E) calcining the resulting power at 700˜800° C., cooling after its removal from the furnace, crushing and sieving to obtain a product. The lithium battery cathode material obtained using the above-described method has the formula LiNixCoyMnzM(1-x-y-z)O2.

Abstract: Provided are dispersions which comprise more than about up to 55 percent by weight or more of an organic peroxide which is normally solid in an anhydrous liquid phase such as dibutyl maleate or dioctyl adipate, with about 5% by weight or more fumed silica to provide a thixotropic, storage stable organic peroxide paste. Addition of about 5 weight % or more of fumed silica was found to result in the formation of a shear thinning anhydrous dispersion of organic peroxide which was storage stable.

Abstract: A molded article including a blend of a self supporting silicone polymer and a sorbent, wherein the sorbent is homogeneously dispersed within the silicone polymer. A method of forming a molding composition including a silicone polymer and a sorbent, wherein the silicone polymer includes a first silicone material and a second silicone material, the first silicone material being different than the second silicone material, the method including the steps of: a) blending the first silicone material and the sorbent into a first blended composition, wherein the sorbent is homogeneously dispersed within the first silicone material; b) blending the second silicone material and the sorbent into a second blended composition, wherein the sorbent is homogeneously dispersed within the second silicone material; and, c) blending the first and second blended composition to form the molding composition, wherein the sorbent is homogeneously dispersed within the molding composition and the molding composition is heat curable.

Abstract: A liquid crystal compound having general physical properties necessary for a liquid crystal compound, a high stability to heat, light or the like, a small viscosity, a suitable refractive index anisotropy, a suitable dielectric anisotropy and steep electro-optic characteristics, a wide temperature range of a nematic phase and an excellent compatibility with other liquid crystal compounds, and a liquid crystal compound especially having a wide temperature range of a nematic phase. A compound represented by formula (1). with, for example, R1 and R2 are alkyl having 1 to 10 carbons; A1 is 1,4-cyclohexylene; A2 is 2,3-difluoro-1,4-phenylene; X is fluorine or chlorine; Z1 and Z2 are a single bond; and p and q is 0 or 1.

Abstract: Provided is a liquid crystal composition satisfying at least one of characteristics such as a high maximum temperature of a nematic phase, a low minimum temperature of the nematic phase, a small viscosity, a large optical anisotropy, a large dielectric anisotropy, a large specific resistance, high stability to ultraviolet light and high stability to heat, or having a suitable balance regarding at least two of the characteristics. Provided is an AM device having a short response time, a large voltage holding ratio, a large contrast ratio, a long service life, etc. The liquid crystal composition having a nematic phase includes a specific three-ring or four-ring compound having a high maximum temperature and a large dielectric anisotropy as a first component, and a specific compound having a small viscosity or a high maximum temperature of the nematic phase as a second component, and a liquid crystal display device contains the composition.

Abstract: The present invention provides high quality monodisperse or substantially monodisperse InAs nanocrystals in the as-prepared state. In some embodiments, the as-prepared substantially monodisperse InAs nanocrystals demonstrate a photoluminescence of between about 700 nm and 1400 nm.

Abstract: Provided is a method for manufacturing MAl2O4:Eu,RE type long-lasting phosphor ceramics capable of producing the ceramics at a reduced raw material cost. In addition, provided is a sintered product of a long-lasting phosphor having no yellow body color. More specifically, provided are the method for manufacturing MAl2O4:Eu,RE type long-lasting phosphor ceramics in which M is an alkaline earth element and RE is a rare earth element other than europium, comprising mixing a BAM (alkaline earth aluminate) phosphor, an alkaline earth compound, an aluminum compound and a rare earth compound to form a mixture, and then firing the mixture; and a white MAl2O4:Eu,RE type long-lasting phosphor.

Abstract: A reactor with minimal dead volume especially suited to reverse-flow applications comprises: a) a reactor body; b) a first head engaged with said reactor body; c) a first conduit extending from outside said head to at least partially through said head; and d) a first valve in flow communication with said first conduit controlling fluid flow along a flow path extending from the first valve and through the reactor body. The reactor is especially suited for use in a process for rapid stream-switching of at least two streams in a reverse-flow reactor.

Abstract: Provided are an apparatus for supplying amine, including: transfer pipe through which amine is transferred; a heat wire which heats the amine that flows through the transfer pipe; a temperature control sensor which controls the temperature in the transfer pipe; and a product recovery valve which recovers product resulting from thermal decomposition of the amine, and a method for supplying amine using the same. The apparatus and method for supplying amine are capable of economically and effectively supplying amine utilizing the thermal decomposition properties of the amine, and may be used to supply amine, for example, to circulating water for power plants.

Abstract: Provided are a shrinkage-reducing agent for a hydraulic material and a shrinkage-reducing agent composition for a hydraulic material including a compound represented by the general formula (1): R1—[O-(A1O)m—R2]n (1), where: R1 represents R1 derived from a polyhydric alcohol represented by R1—[OH]n; A1O represents an oxyalkylene group having 2 to 18 carbon atoms; R2 represents a hydrogen atom or a hydrocarbon group having 1 to 30 carbon atoms; m represents an average added mole number of oxyalkylene groups A1O's; n represents 3 or 4; and when n equals 3, m represents 30 to 150, and when n equals 4, m represents 5 to 150.

Abstract: A formulation including: an organic semiconducting material; and a carrier liquid including at least one of: a first liquid of the formulas (III) or (II): or mixtures of formulas (III) and (II); and a second liquid of a saturated or unsaturated cyclic hydrocarbylene compound of the formula (I): where the respective R1-8, x, and n are as defined herein, and optionally a tertiary liquid carrier, as defined herein. Also disclosed are semiconducting articles prepared with the formulations as defined herein.

Abstract: The present invention is one which provides a production process for lithium-silicate-system compound, the production process being characterized in that: a lithium-silicate compound being expressed by Li2SiO3 is reacted with a substance including at least one member of transition-metal elements that is selected from the group consisting of iron and manganese at 400-650° C. in a molten salt of a carbonate mixture comprising lithium carbonate and at least one member of alkali-metal carbonates that is selected from the group consisting of potassium carbonate, sodium carbonate, rubidium carbonate and cesium carbonate in a mixed-gas atmosphere including carbon dioxide and a reducing gas; and a positive-electrode active material for lithium-ion secondary battery that comprises a lithium-silicate-system compound being obtained by the aforesaid process.

Abstract: A prepreg containing a carbon fiber [A] and a thermosetting resin [B], and in addition, satisfying at least one of the following (1) and (2). (1) a thermoplastic resin particle or fiber [C] and a conductive particle or fiber [D] are contained, and weight ratio expressed by [compounding amount of [C] (parts by weight)]/[compounding amount of [D] (parts by weight)] is 1 to 1000. (2) a conductive particle or fiber of which thermoplastic resin nucleus or core is coated with a conductive substance [E] is contained.

Abstract: Hybrid composite materials with multiscale morphologies are formed by doping polymer submicrometer spheres with semiconductor or metal (e.g. CdS or Ag, respectively) nanoparticles and using these doped microspheres as functional building blocks in production of hybrid periodically structured materials. The preparation of hybrid polymer particles include the following stages: (i) synthesis of monodisperse polymer microspheres, (ii) in-situ synthesis of the inorganic nanoparticles either on the surface, or in the bulk with polymer beads, and (iii) encapsulation of hybrid microspheres with a hydrophobic shell.

Abstract: A transparent conductive film (12, 22) including a transparent base material (2) having insulation properties; and a mesh member made of a conductive metal and provided in the transparent base material (2), wherein the transparent base material (2) is provided with a conductive portion in which the mesh member is arranged, and an insulating portion (I) in which a gap (5) formed by removing the mesh member is arranged.

Abstract: A dielectric fluid composition containing of 60% to 63% in weight of mono-unsaturated fatty acid, of 20% to 23% in weight of di-unsaturated fatty acid, of 5% to 7% in weight of tri-unsaturated fatty acid, and of 6% to 8% in weight of saturated fatty acid, such that the dielectric fluid is free of antioxidants and/or external additives and has the following properties: a dielectric strength of 40 kV to 70 kV at a separation of 2 mm, a dielectric constant of 2.5 to 3.1 at 25° C., and a dissipation factor of 0.05% to 0.15% at 25° C. The dielectric fluid composition can be obtained by a combination of 95.5% to 99.25% in weight of at least one high oleic vegetable oil, of 0.25% to 1.5% in weight of grape seed oil, of 0.25% to 1.5% in weight of sesame seed oil, and of 0.25% to 1.5% in weight of rice bran oil.

Abstract: A scissor jack assembly may have a base member for resting the jack assembly against a supporting surface and a support bracket assembly. First and second lower arm members may each be of an open channel construction with a width extending between a pair of outer sidewalls. One end of each lower arm member may be connected to the base plate. First and second upper arm members may each be of an open channel construction having a width extending between a pair of outer sidewalls. One end of each outer one end may be connected to the support bracket assembly. First and second trunnions may connect the upper arms with the lower arms. Each of the trunnions may include a bore. A rotatable shaft member may extend into the bores of the first and second trunnions.

Abstract: In one preferred form of the present invention, shown in FIG. 1, there is provided a high tonnage winch system (10) for use in offshore construction, transport and docking operations. The winch system (10) includes a winch (14) and a first arrangement (12) supporting the winch (14). A second arrangement (18) is provided for being mounted to a foundation structure in the form of a deck (20). The first arrangement (12) advantageously comprises a first low profile arrangement (16). The second arrangement (18) advantageously comprises a second low profile arrangement (24). The winch system (10) advantageously includes a low profile roller element bearing (26) connecting the first and second arrangements (12), (18) and allowing rotation of the winch (14) about the second arrangement (12), when the winch (14) is connected to the first arrangement (12) and the second arrangement (18) is mounted to the deck (20). The second arrangement is mounted to the deck (20) using high tonnage winch grillage (22).

Abstract: An apparatus and method for one person to safely and easily deploy a tree stand or stand to a pole or a tree.

Abstract: According to one embodiment, a semiconductor memory device includes a word line interconnect layer, a bit line interconnect layer and a pillar. The word line interconnect layer includes a plurality of word lines extending in a first direction. The bit line interconnect layer includes a plurality of bit lines extending in a second direction intersecting with the first direction. The pillar is disposed between each of the word lines and each of the bit lines. The pillar has a selector stacked film containing silicon, and a variable resistance film disposed on a side of the word lines or the bit lines. The selector stacked film has a different component-containing layer. The different component-containing layer is formed at one position in a region excluding ends on the sides of the word and bit lines, and contains a 14 group element having a larger atomic radius than an atomic radius of silicon.

Abstract: Resistance variable memory cell structures and methods are described herein. One or more resistance variable memory cell structures include a first electrode common to a first and a second resistance variable memory cell, a first vertically oriented resistance variable material having an arcuate top surface in contact with a second electrode and a non-arcuate bottom surface in contact with the first electrode; and a second vertically oriented resistance variable material having an arcuate top surface in contact with a third electrode and a non-arcuate bottom surface in contact with the first electrode.

Abstract: Phase change memory cell structures and methods are described herein. A number of methods of forming a phase change memory cell structure include forming a dielectric stack structure on a first electrode, wherein forming the dielectric stack structure includes creating a second region between a first region and a third region of the dielectric stack structure, the second region having a thermal conductivity different than a thermal conductivity of the first region and different than a thermal conductivity of the third region of the dielectric stack. One or more embodiments include forming a via through the first, second, and third regions of the dielectric stack structure, depositing a phase change material in the via, and forming a second electrode on the phase change material.

Abstract: A nonvolatile memory cell includes first and second electrodes and a data storage layer extending between the first and second electrodes. An oxygen diffusion barrier layer is provided, which extends between the data storage layer and the first electrode. An oxygen gettering layer is also provided, which extends between the oxygen diffusion barrier layer and the data storage layer. The oxygen diffusion barrier layer includes aluminum oxide, the oxygen gettering layer includes titanium, the data storage layer includes a metal oxide, such as magnesium oxide, and at least one of the first and second electrodes includes a material selected from a group consisting of tungsten, polysilicon, aluminum, titanium nitride silicide and conductive nitrides.

Abstract: A threshold device including a plurality of adjacent tunnel barrier layers that are in contact with one another and are made from a plurality of different dielectric materials is disclosed. A memory plug having first and second terminals includes, electrically in series with the first and second terminals, the threshold device and a memory element that stores data as a plurality of conductivity profiles. The threshold device is operative to impart a characteristic I-V curve that defines current flow through the memory element as a function of applied voltage across the terminals during data operations. The threshold device substantially reduces or eliminates current flow through half-selected or un-selected memory plugs and allows a sufficient magnitude of current to flow through memory plugs that are selected for read and write operations. The threshold device reduces or eliminates data disturb in half-selected memory plugs and increases S/N ratio during read operations.

Abstract: A semiconductor device is provided and includes a conductive substrate, an insulating film formed on the conductive substrate, a base layer including amino groups, and a reduced graphene oxide layer formed on the base layer.

Abstract: Light-emitting devices (LED) and methods of manufacturing the same.

Abstract: Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a substrate, a light emitting structure comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, the light emitting structure being disposed on the substrate, a nonmetal pattern disposed between the substrate and the active layer, the nonmetal pattern being spaced from the substrate, and an air gap disposed on a side surface of the nonmetal pattern.

Abstract: The present invention relates to a quantum dot light emitting diode device in which a hole transportation layer is formed after forming a quantum dot light emitting layer by a solution process by applying an inverted type quantum dot light emitting diode device for making free selection of a hole transportation layer material that enables easy injection of a hole to the quantum dot light emitting layer; and display device and method therewith.

Abstract: A semiconductor die includes at least one first region and at least one second region. The at least one first region is configured to emit light having at least a first wavelength. The at least one second region is configured to emit light having at least a second wavelength, which is different from the first wavelength.

Abstract: Disclosed herein is a quantum dot phosphor for light emitting diodes, which includes quantum dots and a solid substrate on which the quantum dots are supported. Also, a method of preparing the quantum dot phosphor is provided. Since the quantum dot phosphor of the current invention is composed of the quantum dots supported on the solid substrate, the quantum dots do not aggregate when dispensing a paste obtained by mixing the quantum dots with a paste resin for use in packaging of a light emitting diode. Thereby, a light emitting diode able to maintain excellent light emitting efficiency can be manufactured.

Abstract: A structure and method for producing same provides a solid-state light emitting device with suppressed lattice defects in epitaxially formed nitride layers over a non-c-plane oriented (e.g., semi-polar) template or substrate. A dielectric layer with “window” openings or trenches provides significant suppression of all diagonally running defects during growth. Posts of appropriate height and spacing may further provide suppression of vertically running defects. A layer including gallium nitride is formed over the dielectric layer, and polished to provide a planar growth surface with desired roughness. A tri-layer indium gallium nitride active region is employed. For laser diode embodiments, a relatively thick aluminum gallium nitride cladding layer is provided over the gallium nitride layer.

Abstract: Disclosed is a carbon nanotube field effect transistor which stably exhibits excellent electrical conduction properties. Also disclosed are a method for manufacturing the carbon nanotube field effect transistor, and a biosensor comprising the carbon nanotube field effect transistor. First of all, an silicon oxide film is formed on a contact region of a silicon substrate by an LOCOS method. Next, an insulating film, which is thinner than the silicon oxide film on the contact region, is formed on a channel region of the silicon substrate. Then, after arranging a carbon nanotube, which forms a channel, on the silicon substrate, the carbon nanotube is covered with a protective film. Finally, a source electrode and a drain electrode are formed, and the source electrode and the drain electrode are electrically connected to the carbon nanotube, respectively.

Abstract: An article includes a flexible or rigid substrate and dry layer comprising an aromatic, non-polymeric amic acid salt that can be thermally converted to a corresponding arylene diimide. Upon conversion of the aromatic, non-polymeric amic acid salt, the dry layer has semiconductive properties and can be used in various devices including thin-film transistor devices.

Abstract: Methods and apparatus provide for a transistor, including: a semiconductor layer including molecules, protons, and/or ions, etc. diffused therein from a photoactive material; a channel disposed on or in the semiconductor layer; a source disposed on or in the semiconductor layer; a drain disposed on or in the semiconductor layer; and a gate electrically coupled to the semiconductor layer.

Abstract: An organic thin film transistor (OTFT) using paper as a substrate and silk protein as an insulating material and methods for manufacturing the same are disclosed. The OTFT of the present invention comprises: a paper substrate; a gate disposed on the paper substrate; a gate insulating layer containing silk protein, which is disposed on the paper substrate and covers the gate; an organic semiconductor layer; and a source and a drain, wherein the organic semiconductor layer, the source and the drain are disposed over the gate insulating layer.

Abstract: An electrically pumped light emitting device emits a light when powered by a power source. The light emitting device includes a first electrode, a second electrode including an outer surface, and at least one active organic semiconductor disposed between the first and second electrodes. The device also includes a dye adjacent the outer surface of the second electrode such that the second electrode is disposed between the dye and the active organic semiconductor. A voltage applied by the power source across the first and second electrodes causes energy to couple from decaying dipoles into surface plasmon polariton modes, which then evanescently couple to the dye to cause the light to be emitted.

Abstract: An electronic device comprising a substrate, a first electrode, at least one organic functional layer, and a second electrode is indicated. The organic functional layer comprises a first, a second, and a third matrix material, wherein the first matrix material has a larger band gap than the second and the third matrix materials.

Abstract: An organic EL device material includes at least a unit including 3,5-biscarbazolylphenyl group, a unit including 4-carbazolylphenyl group, and a compound including a unit including a nitrogen-containing aromatic heterocyclic ring bonding the unit including 3,5-biscarbazolylphenyl group and the unit including 4-carbazolylphenyl group.

Abstract: An organic light emitting element includes a pair of electrodes at least one of which has visible light transmittance; and an organic EL layer provided between the pair of electrodes. The organic EL layer includes at least an organic light emitting layer that emits light when a voltage is applied between the pair of electrodes. The organic light emitting layer includes an electron transport host material; and at least first and second guest materials. Each of the first and second guest materials has an emission peak in a blue to blue-green color region. The electron transport host material has an ionization potential (IPH) and an electron affinity (AFH), and the first guest material has an ionization potential (IPG1) and an electron affinity (AFG1) that satisfy Expression (1): IPH?IPG1 and AFH<AFG1 (1). The organic light emitting element has significantly improved efficiency without any influence on driving voltage.

Abstract: A compound for an organic photoelectric device and an organic photoelectric device, the compound being represented by the following Chemical Formula 1:

Abstract: A display device comprises a plurality of electroluminescent display pixels and a plurality of semiconductor elements (“chiplets”), each pixel being electrically connected to the output of one or more of said semiconductor elements through a via hole in an electrically insulating layer for addressing the plurality of display pixels, and a plurality of colour filters and/or downconverters. The colour filters and/or downconverters and the semiconductor elements are provided on the same surface of the device.

Abstract: A method for manufacturing a light-emitting element. An anode is formed on a main surface of a substrate. A hole-injection layer is formed at least above the anode. At least the hole-injection layer is covered with a protective film. A bank which is provided with an aperture through which a portion of the protective film is exposed, is formed on the protective film by a wet process. The portion of the protective film exposed through the aperture is removed so that a portion of the hole-injection layer is exposed, a light-emitting layer is formed on the hole-injection layer exposed through the aperture, and a cathode is formed above the light-emitting layer. The protective film is resistant to a fluid used during the wet process.

Abstract: A hole injection layer and a light-emitting layer are laminated between a first electrode and a second electrode of a light emitter. A bank defines an area in which the light-emitting layer is to be formed. In the area defined by the bank, a hole injection layer has a recess in an upper surface thereof. An upper peripheral edge of the recess is covered with a part of the bank.

Abstract: A light emitter and a method of manufacturing a light emitter. The light emitter includes a first electrode, a charge injection transport layer, a light-emitting layer, and a second electrode that are layered in this order. At least the light-emitting layer is defined by a bank that has at least one liquid-repellent surface. The charge injection transport layer is principally composed of a metal compound that is more liquid-philic than the surface of the bank. The charge injection transport layer includes a recessed structure so that in a region defined by the bank, the charge injection transport layer is lower than a bottom surface of the bank.

Abstract: It is an object of the invention to provide a light emitting device which can display a superior image in which luminescent color from each light emitting layer is beautifully displayed and power consumption is lowered in a light emitting element in which light emitting layers are stacked. One feature of the invention is that, in a light emitting element which comprises light emitting layers stacked between electrodes, each distance between each light emitting layer and an electrode is approximately oddly multiplied ¼ wavelength by controlling a thickness of a layer provided therebetween to enhance luminous output efficiency. Another feature of the invention is that a drive voltage is lowered using a high conductive material for the layer compared with a conventional element.

Abstract: To provide a method for manufacturing a thin film transistor in which contact resistance between an oxide semiconductor layer and source and drain electrode layers is small, the surfaces of the source and drain electrode layers are subjected to sputtering treatment with plasma and an oxide semiconductor layer containing In, Ga, and Zn is formed successively over the source and drain electrode layers without exposure of the source and drain electrode layers to air.

Abstract: A manufacturing method of a photoelectric conversion device includes the following steps: forming a first electrode over a substrate; and, over the first electrode, forming a photoelectric conversion layer that includes a first conductive layer having one conductivity, a second semiconductor layer, and a third semiconductor layer having a conductivity opposite to the one conductivity of the second semiconductor layer over the first electrode. The manufacturing method further includes the step of removing a part of the second semiconductor layer and a part of the third semiconductor layer in a region of the photoelectric conversion layer so that the third semiconductor layer does not overlap the first electrode.