Patents Issued in December 1, 2011
  • Publication number: 20110291091
    Abstract: In an organic light emitting display, a conductive layer is formed on the bottom surface of a substrate, and the conductive layer is used as a wiring line for supplying a power source, and as the electrode of a capacitor. Therefore, it is possible to easily secure the aperture ratio of a pixel, to easily solve the problem of IR drops by controlling the area or thickness of the conductive layer, and to easily secure the electrostatic capacity of the capacitor. In particular, in the case of a front surface light emitting structure, since a capacitor of a metal/insulating layer/metal (MIM) structure may be formed in a light emitting region, enough aperture ratio and electrostatic capacity may be secured. Therefore, a high resolution organic light emitting display may be easily realized, and enough aperture ratio and electrostatic capacity are secured so as to realize high picture quality.
    Type: Application
    Filed: March 29, 2011
    Publication date: December 1, 2011
    Applicant: Samsung Mobile Display Co., Ltd.
    Inventors: Jong-Yun Kim, Il-Jeong Lee, Choong-Youl Im
  • Publication number: 20110291092
    Abstract: Provided is a novel structure of a field effect transistor using a metal-semiconductor junction. The field effect transistor includes a wiring which is provided over a substrate and also functions as a gate electrode; an insulating film which is provided over the wiring, has substantially the same shape as the wiring, and also functions as a gate insulating film; a semiconductor layer which is provided over the insulating film and includes an oxide semiconductor and the like; an oxide insulating layer which is provided over the semiconductor layer and whose thickness is 5 times or more as large as the sum of the thickness of the insulating film and the thickness of the semiconductor layer or 100 nm or more; and wirings which are connected to the semiconductor layer through openings provided in the oxide insulating layer.
    Type: Application
    Filed: May 24, 2011
    Publication date: December 1, 2011
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventor: Yasuhiko Takemura
  • Publication number: 20110291093
    Abstract: The present invention relates to a semiconductor device including a thin film transistor comprising a microcrystalline semiconductor which forms a channel formation region and includes an acceptor impurity element, and to a manufacturing method thereof. A gate electrode, a gate insulating film formed over the gate electrode, a first semiconductor layer which is formed over the gate insulating film and is formed of a microcrystalline semiconductor, a second semiconductor layer which is formed over the first semiconductor layer and includes an amorphous semiconductor, and a source region and a drain region which are formed over the second semiconductor layer are provided in the thin film transistor. A channel is formed in the first semiconductor layer when the thin film transistor is placed in an on state.
    Type: Application
    Filed: August 11, 2011
    Publication date: December 1, 2011
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Shunpei YAMAZAKI, Makoto FURUNO
  • Publication number: 20110291094
    Abstract: A display panel including a first substrate, a second substrate opposite to the first substrate and a display medium between the first substrate and the second substrate is provided. The first substrate has a scan line, a data line and an active device electrically connected to the scan line and the data line. The second substrate has a common electrode layer, an insulting layer covering the common electrode layer, a pixel electrode on the insulating layer and a contact structure on the insulating layer. More specifically, the contact structure is electrically connected to the pixel structure and electrically connected to the active device on the first substrate.
    Type: Application
    Filed: August 18, 2010
    Publication date: December 1, 2011
    Applicant: AU OPTRONICS CORPORATION
    Inventors: Tsung-Chin Cheng, Zeng-De Chen, Seok-Lyul Lee
  • Publication number: 20110291095
    Abstract: A display device including a display panel including a first pixel area and a second pixel area adjacent to the first pixel area; and a barrier positioned on a surface of the display panel, the barrier including: a first sub-barrier; and a second sub-barrier, wherein the first sub-barrier and the second sub-barrier are disposed between the first pixel area and the second pixel area to respectively cover an end of the first pixel area and an end of the second pixel area, in which the first pixel area and the second pixel area display a same first image, or the first pixel area displays any one of a first left-eye image and a first right-eye image and the second pixel area displays the other one of the first left-eye image and the first right-eye image.
    Type: Application
    Filed: December 22, 2010
    Publication date: December 1, 2011
    Applicant: Samsung Mobile Display CO., Ltd.
    Inventors: Jong-Woong PARK, Joo-Hyung Lee, Geun-Young Jeong, Byung-Ki Chun
  • Publication number: 20110291096
    Abstract: A method of fabricating an array substrate and a display device including the array substrate are discussed. According to an embodiment, the method includes forming a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, forming an oxide semiconductor layer and an etch prevention layer on the gate insulating layer using a single mask, forming source and drain electrodes on the etch prevention layer, and forming a passivation layer including a contact hole on the source and drain electrodes and on the gate insulating layer, and forming a pixel electrode on the passivation layer and through the contact hole.
    Type: Application
    Filed: May 25, 2011
    Publication date: December 1, 2011
    Inventors: Chang-Il RYOO, Hyun-Sik Seo, Jong-Uk Bae
  • Publication number: 20110291097
    Abstract: An embodiment of the present invention provides a TFT array substrate, in which TFT elements and pixel electrodes being correspondingly connected with the TFT elements are arrayed in matrix on an insulating substrate, the TFT array substrate including: gate bus lines made from a first metal material; source bus lines made from a second metal material; pixel electrodes made from a third metal material; a clock wiring made from the first metal material; a branch wiring made from the second metal material; and a connection conductor made from the third metal material, the connection conductor connecting the clock wiring and the branch wiring at a connection part in a periphery area, the connection part having a branch-wiring via hole, which exposes the branch wiring which is covered with the connection conductor, and overlaps the clock wiring at least partly in a plane view.
    Type: Application
    Filed: November 5, 2009
    Publication date: December 1, 2011
    Applicant: Sharp Kabushiki Kaisha
    Inventors: Isao Ogasawara, Takaharu Yamada, Masahiro Yoshida, Satoshi Horiuchi, Shinya Tanaka, Tetsuo Kikuchi
  • Publication number: 20110291098
    Abstract: A first resistance element (R1) and a second resistance element (R2) are added to a pixel circuit (1) in which an organic EL element (E1) is lighted and driven by a control TFT (T1) and a drive TFT (T2). That is, an anode power supply wiring (a1) and a scanning wiring (s1) are connected through the first resistance element (R1), and a cathode power supply wiring (k1) and a data wiring (d1) are connected through the second resistance element (R2). A test anode voltage (VH1) and a test cathode voltage (VL1) are applied respectively to the anode power supply wiring and the cathode power supply wiring, whereby pixels are lighted and driven. Consequently, whether or not the pixel circuit (1) is normally operated can be verified.
    Type: Application
    Filed: February 25, 2009
    Publication date: December 1, 2011
    Applicants: TOHOKU PIONEER CORPORATION, PIONEER CORPORATION
    Inventor: Akinori Hayafuji
  • Publication number: 20110291099
    Abstract: A three mask process for forming an LCD substrate includes, depositing in sequence on a base substrate a gate metallic layer, a gate insulation layer and a channel layer. A first photoresist pattern is used to form a gate electrode of a switching device, a channel pattern and a gate line on the gate electrode. A transparent conductive layer and a source metallic layer are deposited in sequence on the base substrate having the channel pattern. A source electrode and a drain electrode of the switching device, a pixel electrode and a source line electronically connected to the drain electrode, are formed by a second photoresist pattern. A first protective insulation layer is formed, and the first protective insulation layer on the pixel electrode is removed by a third photoresist pattern. Therefore, by the three masks process yields a simplified manufacturing process in which the lower portion of the source metallic pattern is not formed and display quality is improved.
    Type: Application
    Filed: August 10, 2011
    Publication date: December 1, 2011
    Inventor: Eun-Guk LEE
  • Publication number: 20110291100
    Abstract: A device and method for inducing stress in a semiconductor layer includes providing a substrate having a dielectric layer formed between a first semiconductor layer and a second semiconductor layer and processing the second semiconductor layer to form an amorphized material. A stress layer is deposited on the first semiconductor layer. The wafer is annealed to memorize stress in the second semiconductor layer by recrystallizing the amorphized material.
    Type: Application
    Filed: May 28, 2010
    Publication date: December 1, 2011
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: KANGGUO CHENG, Bruce B. Doris, Ali Khakifirooz, Pranita Kulkarni, Ghavam G. Shahidi
  • Publication number: 20110291101
    Abstract: A display, including a substrate, a plurality of signal wires, a first gate electrode, a second gate electrode, a gate insulating layer, a first semiconductor layer including a first source/drain region doped with a p-type impurity, a second semiconductor layer including a second source/drain region doped with an n-type impurity, a planarization layer having a first contact hole exposing a portion of the first source/drain region, a second contact hole exposing a portion of the second source/drain region, and a third contact hole exposing a portion of any one of the signal wires, a first connection electrode, a second connection electrode, a lower electrode, an organic film layer, and an upper electrode.
    Type: Application
    Filed: April 21, 2011
    Publication date: December 1, 2011
    Inventor: Woong-Sik Choi
  • Publication number: 20110291102
    Abstract: A thin film transistor array panel includes a substrate, a first thin film transistor formed on the substrate, a color filter formed on the first thin film transistor and having a through hole, a capping layer formed on the color filter and having an opening, and a pixel electrode formed on the capping layer and connected to the first thin film transistor through the through hole. The opening exposes the color filter outside the through hole.
    Type: Application
    Filed: August 11, 2011
    Publication date: December 1, 2011
    Inventors: Jin-Seuk KIM, Yui-Ku LEE, Byoung-Joo KIM, Chul HUH
  • Publication number: 20110291103
    Abstract: A Schottky photodiode may include a monocrystalline semiconductor substrate having a front surface, a rear surface, and a first dopant concentration and configured to define a cathode of the Schottky photodiode, a doped epitaxial layer over the front surface of the monocrystalline semiconductor substrate having a second dopant concentration less than the first dopant concentration, and parallel spaced apart trenches in the doped epitaxial layer and having of a depth less than a depth of the doped epitaxial layer.
    Type: Application
    Filed: August 11, 2011
    Publication date: December 1, 2011
    Applicant: STMicroelectronics S.r.l
    Inventor: Massimo Cataldo MAZZILLO
  • Publication number: 20110291104
    Abstract: A smoothing method for semiconductor material and semiconductor wafers produced by the method are disclosed. Semiconductor wafers with reduced atomic steps, as well with reduced scratches and subsurface defects can be produced. Such wafers feature an improved growth surface that can provide for the growth of an epilayer with reduced macroscopic defects and defect densities. A method of smoothing the surface of a wafer according to example embodiments of the invention includes planarizing the surface of a semiconductor wafer, and then oxidizing the wafer to achieve a specified thickness of oxide on the surface of the wafer. The oxide can then be stripped from the surface of the semiconductor wafer.
    Type: Application
    Filed: May 27, 2010
    Publication date: December 1, 2011
    Applicant: CREE, INC.
    Inventors: Davis Andrew McClure, Nathaniel Mark Williams
  • Publication number: 20110291105
    Abstract: A semiconductor module according to the present invention includes: an insulating substrate (4); a plurality of semiconductor chips (1) disposed on a surface of the insulating substrate (4) so as to be apart from each other; solder layers (9) formed, on a back surface side of the insulating substrate (4), only at positions corresponding to positions at which the respective semiconductor chips (1) are disposed; and a base plate (6) connected to the insulating substrate (4) through the solder layers (9).
    Type: Application
    Filed: December 17, 2010
    Publication date: December 1, 2011
    Applicant: MITSUBISHI ELECTRIC CORPORATION
    Inventors: Kenji HATORI, Shigeru Hasegawa
  • Publication number: 20110291106
    Abstract: Provided is a power semiconductor device including: a power semiconductor element; a metal block as a first metal block that is connected to the power semiconductor element through an upper surface electrode pattern as a first upper surface electrode pattern selectively formed on an upper surface of the power semiconductor element; and a mold resin filled so as to cover the power semiconductor element and the metal block, wherein an upper surface of the metal block is exposed from a surface of the mold resin.
    Type: Application
    Filed: February 23, 2011
    Publication date: December 1, 2011
    Applicant: MITSUBISHI ELECTRIC CORPORATION
    Inventor: Masao KIKUCHI
  • Publication number: 20110291107
    Abstract: A vertical junction field effect transistor (VJFET) having a self-aligned pin, a p+/n/n+ or a p+/p/n+ gate-source junction is described. The device gate can be self-aligned to within 0.5 ?m to the source in order to maintain good high voltage performance (i.e. low DIBL) while reducing gate-source junction leakage under reverse bias. The device can be a wide-bandgap semiconductor device such as a SiC vertical channel junction field effect. Methods of making the device are also described.
    Type: Application
    Filed: May 20, 2011
    Publication date: December 1, 2011
    Applicant: SEMISOUTH LABORATORIES, INC.
    Inventors: Andrew Ritenour, David C. Sheridan
  • Publication number: 20110291108
    Abstract: A detection device comprising a photodetector comprising a first semiconductor layer through which light first enters the photodetector; the first semiconductor layer to semiconductor material crystal lattice which terminates at an interface; the discontinuity of the semiconductor crystal lattice at the interface creating a first interface charge; the first semiconductor layer being an absorption layer in which photons in a predetermined wavelength range are absorbed and create photogenerated carriers; and a second polar semiconductor layer deposited on the crystal lattice of the first semiconductor layer, the second polar semiconductor being substantially transparent to light in the predetermined wavelength range, the second polar semiconductor layer having a total polarization different from the first semiconductor layer so that a second interface charge is induced at the interface between the first and second semiconductor layers; the induced second interface charge reduces or substantially cancels the fir
    Type: Application
    Filed: May 24, 2011
    Publication date: December 1, 2011
    Applicant: U.S. Government as represented by the Secretary of the Army
    Inventors: Paul H. Shen, Michael Wraback, Anand V. Sampath
  • Publication number: 20110291109
    Abstract: An avalanche photodetector comprising a multiplication layer formed of a first material having a first polarization; the multiplication layer having a first electric field upon application of a bias voltage; an absorption layer formed of a second material having a second polarization forming an interface with the multiplication layer; the absorption layer having a second electric field upon application of the bias voltage, the second electric field being less than the first electric field or substantially zero, carriers created by light absorbed in the absorption layer being multiplied in the multiplication layer due to the first electric field; the absorption layer having a second polarization which is greater or less than the first polarization to thereby create an interface charge; the interface charge being positive when the first material predominately multiplies holes, the interface charge being negative when the first material predominately multiplies electrons, the change in electric field at the inte
    Type: Application
    Filed: May 26, 2011
    Publication date: December 1, 2011
    Applicant: U.S. Government as represented by the Secretary of the Army
    Inventors: MICHAEL WRABACK, Paul H. Shen, Anand V. Sampath
  • Publication number: 20110291110
    Abstract: The silicon carbide semiconductor device includes a substrate, a drift layer, a base region, a source region, a trench, a gate insulating layer, a gate electrode, a source electrode, a drain electrode, and a deep layer. The deep layer is disposed under the base region and is located to a depth deeper than the trench. The deep layer is divided into a plurality of portions in a direction that crosses a longitudinal direction of the trench. The portions include a group of portions disposed at positions corresponding to the trench and arranged at equal intervals in the longitudinal direction of the trench. The group of portions surrounds corners of a bottom of the trench.
    Type: Application
    Filed: May 27, 2011
    Publication date: December 1, 2011
    Applicants: TOYOTA JIDOSHA KABUSHIKI KAISHA, DENSO CORPORATION
    Inventors: Naohiro SUZUKI, Hideo MATSUKI, Masahiro SUGIMOTO, Hidefumi TAKAYA, Jun MORIMOTO, Tsuyoshi ISHIKAWA, Narumasa SOEJIMA, Yukihiko WATANABE
  • Publication number: 20110291111
    Abstract: A chip size package includes: a radio frequency substrate having a radio frequency semiconductor circuit formed on a principal surface; a semiconductor cover substrate arranged at a position facing the principal surface of the radio frequency substrate; and a joining frame arranged in a manner such as to surround the radio frequency semiconductor circuit between the radio frequency substrate and the semiconductor cover substrate, the joining frame joining the radio frequency substrate and the semiconductor cover substrate, wherein: the radio frequency substrate further has a wire formed on a surface opposite to the principal surface; and the radio frequency semiconductor circuit and the wire are electrically connected to each other through a via hole penetrating through the radio frequency substrate in a thickness direction thereof.
    Type: Application
    Filed: August 10, 2011
    Publication date: December 1, 2011
    Applicant: PANASONIC CORPORATION
    Inventors: Shuichi NAGAI, Takeshi FUKUDA, Hiroyuki SAKAI
  • Publication number: 20110291112
    Abstract: Wide bandgap semiconductor devices including normally-off VJFET integrated power switches are described. The power switches can be implemented monolithically or hybridly, and may be integrated with a control circuit built in a single- or multi-chip wide bandgap power semiconductor module. The devices can be used in high-power, temperature-tolerant and radiation-resistant electronics components. Methods of making the devices are also described.
    Type: Application
    Filed: August 11, 2011
    Publication date: December 1, 2011
    Applicant: SEMISOUTH LABORATORIES, INC.
    Inventors: Igor SANKIN, Joseph Neil MERRETT
  • Publication number: 20110291113
    Abstract: Embodiments of the invention include a semiconductor light emitting device capable of emitting first light having a first peak wavelength and a wavelength converting element capable of absorbing the first light and emitting second light having a second peak wavelength. In some embodiments, the structure further includes a metal nanoparticle array configured to pass a majority of light in a first wavelength range and reflect or absorb a majority of light in a second wavelength range. In some embodiments, the structure further includes a filter configured to pass a majority of light in a first wavelength range and reflect or absorb a majority of light in a second wavelength range, wherein the filter is configured such that a wavelength at which a minimum amount of light is passed by the filter shifts no more than 30 nm for light incident on the filter at angles between 0° and 60° relative to a normal to a major surface of the filter.
    Type: Application
    Filed: May 27, 2010
    Publication date: December 1, 2011
    Applicants: PHILIPS LUMILEDS LIGHTING COMPANY, LLC, KONINKLIJKE PHILIPS ELECTRONICS N.V.
    Inventor: Danielle R. CHAMBERLIN
  • Publication number: 20110291114
    Abstract: A light-emitting diode (LED) package structure includes a substrate, a first LED, a second LED, and a resin material. At least one enclosure made of a transparent material forms on a surface of the substrate, and encloses and forms at least one area on the substrate. The first LED and the second LED are disposed in the area and adjacent to each other, and the resin material is disposed in the area, and covers the first LED and the second LED. The LED package structure obtains desired illuminating lights by mixing lights respectively emitted by the first LED and the second LED.
    Type: Application
    Filed: September 24, 2010
    Publication date: December 1, 2011
    Applicant: INTEMATIX TECHNOLOGY CENTER CORPORATION
    Inventor: Tzu-Chi Cheng
  • Publication number: 20110291115
    Abstract: An organic light emitting display having first pixel power source lines receiving a pixel driving voltage from first power supply sources and second pixel power source lines arranged between the first pixel power source lines and receiving a pixel driving voltage from second power supply sources, the light emitting diode of each of a plurality of pixels included in an image display unit is divided into two, and the divided light emitting diodes are coupled to the different pixel power source lines so that brightness non-uniformity of the image display unit caused by the IR drops of the pixel power source lines is reduced or prevented.
    Type: Application
    Filed: December 21, 2010
    Publication date: December 1, 2011
    Inventors: Hyung-Soo Kim, Soon-Sung Ahn, Do-Ik Kim, Keum-Nam Kim
  • Publication number: 20110291116
    Abstract: An organic light emitting diode (OLED) display is disclosed. In one embodiment, the display includes i) a substrate, ii) a driving circuit formed on the substrate, iii) an organic light emitting diode formed on the substrate and electrically connected to the driving circuit, iv) an encapsulation thin film formed on the driving circuit and organic light emitting diode and v) a spacer formed on the substrate and surrounding the encapsulation thin film.
    Type: Application
    Filed: March 16, 2011
    Publication date: December 1, 2011
    Applicant: Samsung Mobile Display Co., Ltd.
    Inventors: Dong-Hun Kang, Min-Chul Suh, Dong-Won Han, Jin-Ho Kwack, Dae-Beom Shin, Hyo-Jin Kim
  • Publication number: 20110291117
    Abstract: A manufacturing method of an organic light emitting diode (OLED) display device includes forming a thin film transistor and an organic light emitting diode in a display area of a first substrate, forming a thin film encapsulation layer that has a layering structure of an organic film and an inorganic film on one substrate of the first substrate and a second substrate, forming a sealing member by coating a sealing material that includes an inorganic sealant and an organic compound on an edge of the second substrate, removing the organic compound of the sealing member by baking the sealing member, layering the second substrate on the first substrate so that the sealing member contacts the first substrate, dissolving the sealing member by using a laser beam, solidifying the sealing member, attaching the sealing member to the first substrate, and removing the second substrate from the sealing member.
    Type: Application
    Filed: March 21, 2011
    Publication date: December 1, 2011
    Applicant: Samsung Mobile Display Co., Ltd.
    Inventors: Jin-Ho Kwack, Dae-Beom Shin, Dong-Hun Kang, Hyo-Jin Kim
  • Publication number: 20110291118
    Abstract: A mother substrate for forming flat panel display apparatuses and a method of manufacturing the same, the mother substrate including a substrate; a plurality of display units on the substrate, the display units being for forming a plurality of flat panel display apparatuses; a sealing substrate facing the display units; sealing members between the substrate and the sealing substrate, the sealing members surrounding each of the display units; a plurality of wiring units between the substrate and the sealing substrate, the wiring units overlapping the sealing members; a connecting unit including a conductive material, the connecting unit connecting adjacent wiring units in one direction and having a width that is greater than a width of each of the wiring units; and inlets connected to the plurality of wiring units and an external power source, the inlets being for applying a voltage to the plurality of wiring units.
    Type: Application
    Filed: April 18, 2011
    Publication date: December 1, 2011
    Inventors: Oh-Seob Kwon, Sung-Soo Koh, Byung-Uk Han, Jung-Jun Im, Jae-Sang Ro, Seog-Young Lee, Won-Eui Hong
  • Publication number: 20110291119
    Abstract: An organic light emitting diode display is disclosed. The organic light emitting diode display includes a base substrate including a display area and a non-display area around the display area, a plurality of pixels formed over the display area of the base substrate, the plurality of pixels including a common electrode, a common power line formed over the base substrate and electrically connected to a circuit of each of the plurality of pixels, an encapsulation substrate bonded to the base substrate by a sealing member surrounding the plurality of pixels, the encapsulation substrate including an inner surface facing the base substrate, a first conductive layer formed over the inner surface and electrically connecting the common power line to a first potential, and a second conductive layer formed over the inner surface and spaced apart from the first conductive layer, the second conductive layer electrically connecting the common electrode to a second potential.
    Type: Application
    Filed: April 14, 2011
    Publication date: December 1, 2011
    Applicant: SAMSUNG MOBILE DISPLAY CO., LTD.
    Inventors: Do-Hyung RYU, Chun-Seok KO, Kie Hyun NAM
  • Publication number: 20110291120
    Abstract: Example embodiments of the present invention relate to a light emitting device having a connection structure and a method of manufacturing the light emitting device. The method of manufacturing may include forming a light emitting region and electrode layers on a substrate in which a plurality of cell regions and a bridge for partially connecting the cell regions are disposed, thereby providing a light emitting device that controls stress with relative ease and integrates electrical connections between the cell regions.
    Type: Application
    Filed: May 17, 2011
    Publication date: December 1, 2011
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Young-jo Tak, Young-soo Park, Su-hee Chae, Bok-ki Min, Jun-youn Kim, Hyun-gi Hong, Jae-won Lee, Hyung-su Jeong
  • Publication number: 20110291121
    Abstract: A light emitting element package includes a substrate, at least two light emitting element modules and an encapsulation member. The substrate includes a circuit layer. The circuit layer includes a plurality of solder pads. The at least two light emitting element modules are mounted on the substrate. Each of the at least two light emitting element modules includes a plurality of light emitting elements. Each light emitting element of the at least two light emitting element modules is electrically coupled to neighboring light emitting element in serial through the solder pads. The at least two light emitting element modules are reversely arranged. The encapsulation member is configured to encapsulate the at least two light emitting element modules on the substrate.
    Type: Application
    Filed: May 23, 2011
    Publication date: December 1, 2011
    Applicant: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.
    Inventors: SHIH-CHENG HUANG, PO-MIN TU, SHUN-KUEI YANG, CHIA-HUNG HUANG
  • Publication number: 20110291122
    Abstract: A display device with the substrate divided into three areas. A semiconductor layer is formed in the first second areas and includes a channel area and source/drain areas; a gate insulating layer formed on the semiconductor layer in an area corresponding to the channel area; and a gate electrode formed on the gate insulating layer. The source/drain electrodes contact the source/drain areas, respectively; a pixel electrode is formed in the same layer but in a third area; an interlayer insulating layer is formed on a whole surface of the substrate including the formed structures; and a gate line is formed on the interlayer insulating layer and is electrically connected to a gate electrode of the first area through a via contact hole of the interlayer insulating layer.
    Type: Application
    Filed: May 24, 2011
    Publication date: December 1, 2011
    Applicant: SAMSUNG MOBILE DISPLAY CO., LTD.
    Inventors: Min-Chul SHIN, Kyu-Sik CHO, Won-Kyu LEE, Tae-Hoon YANG, Byoung-Kwon CHOO, Yun-Gyu LEE, Yong-Hwan PARK, Sang-Ho MOON, Bo-Kyung CHOI
  • Publication number: 20110291123
    Abstract: A method for producing a plurality of LED illumination devices which each emit light having an average value of a first photometric parameter including producing a plurality of LED chips which emit light of the same color; measuring values of the first photometric parameter of the LED chips; combining the LED chips to form groups of at least two LED chips which have different values of the first photometric parameter such that differences in the average values of all the LED illumination devices are imperceptible to the human eye; and equipping a respective LED illumination device with a group of LED chips.
    Type: Application
    Filed: December 18, 2009
    Publication date: December 1, 2011
    Applicants: OSRAM OPTO SEMICONDUCTORS GMBH, OSRAM GESELLSCHAFT MIT BESCHRÄNKTER HAFTUNG
    Inventors: Markus Hofmann, Ralph Peter Bertram, Julius Muschaweck
  • Publication number: 20110291124
    Abstract: In summary, the present invention relates to a device, a system, a method and a computer program enabling a thermally improved packaging of a plurality of light emitting diodes (110, 112, 114) and at least one integrated circuit (116). A most temperature sensitive light emitting diode (110) of the plurality of light emitting diodes is located between less temperature sensitive light emitting diodes (112, 114) of the plurality of light emitting diodes and the at least one integrated circuit. Further, various additional measures such as e.g. varying at least one mounting area (102, 104, 106) of at least one light emitting diode, providing at least one thermal shielding (118), etc. can be taken in order to thermally optimize the packaging.
    Type: Application
    Filed: February 2, 2010
    Publication date: December 1, 2011
    Applicant: Koninklijke Philips Electronics N.V.
    Inventors: Marc Andre DeSamber, Hendrik Jan Eggink
  • Publication number: 20110291125
    Abstract: A lighting module may include a lighting band with a band-shaped flexible substrate, wherein at least one semiconductor light source is applied to a top side of the substrate, wherein the lighting module is faced with a protective layer such that at least one emission area of the at least one semiconductor light source is exposed thereby.
    Type: Application
    Filed: January 25, 2010
    Publication date: December 1, 2011
    Applicant: OSRAM GESELLSCHAFT MIT BESCHRAENKTER HAFTUNG
    Inventors: Thomas Donauer, Robert Kraus, Christine Maier, Giovanni Scilla, Steffen Strauss
  • Publication number: 20110291126
    Abstract: An active matrix substrate (5) is provided with: a plurality of source wiring lines (S) and a plurality of gate wiring lines (G) which are arranged in a matrix; and pixels (P) having thin film transistors (25) disposed in the vicinity of the intersections of the source wiring lines (S) and the gate wiring lines (G), and pixel electrodes (26) connected to the thin film transistors (25). In the active matrix substrate (5), a base material (5a) is disposed in such a manner that the source wiring lines (S) and the gate wiring lines (G) intersect each other, and on the base material (5a), auxiliary capacity electrodes (28), which are provided on the pixel basis, are made of transparent electrodes, and generate an auxiliary capacity, and auxiliary capacity wiring lines (29), which are connected to the auxiliary capacity electrodes (28) and are made of an aluminum alloy, are provided.
    Type: Application
    Filed: November 13, 2009
    Publication date: December 1, 2011
    Applicant: SHARP KABUSHIKI KAISHA
    Inventors: Hijiri Nakahara, Yukihiro Hotta, Kohichi Tanijiri, Junichi Morinaga
  • Publication number: 20110291127
    Abstract: Disclosed is a light emitting device including, a light emitting structure that has a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, wherein the active layer is provided between the first conductive semiconductor layer and the second conductive semiconductor layer, and includes a plurality of well layers and at least one barrier layer, wherein the barrier layer includes a first nitride layer and a second nitride layer provided on the first nitride layer, and wherein the first nitride layer has a larger energy band gap than the second nitride layer while the energy band gap of the second nitride layer is larger than that of each well layer.
    Type: Application
    Filed: July 28, 2011
    Publication date: December 1, 2011
    Applicant: LG INNOTEK CO., LTD.
    Inventors: Dae Seob HAN, Yong Tae MOON
  • Publication number: 20110291128
    Abstract: A light emitter and method for manufacturing a light emitter. The light emitter includes a first electrode, a charge injection transport layer, a light-emitting layer, and a second electrode that are layered in this order. At least the light-emitting layer is defined by bank. The charge injection transport layer includes a recessed portion having an inner bottom surface in contact with a bottom surface of the light-emitting layer and an inner side surface continuous with the inner bottom surface and in contact at least partly with a side surface of the light-emitting layer. The inner side surface has a lower edge continuous with the inner bottom surface, and an upper edge is aligned with a portion of a bottom periphery of the bank, the portion being in contact with the light-emitting layer or in contact with a bottom surface of the bank.
    Type: Application
    Filed: August 9, 2011
    Publication date: December 1, 2011
    Applicant: PANASONIC CORPORATION
    Inventors: Kenji HARADA, Takayuki TAKEUCHI, Seiji NISHIYAMA, Takahiro KOMATSU
  • Publication number: 20110291129
    Abstract: An optoelectronic device that emits mixed light includes light in a first and a second wavelength range, including a first semiconductor light source having a first light-emitting diode, which during operation emits light in the first wavelength range with a first intensity; a second semiconductor light source having a second light-emitting diode, which during operation emits light in the second wavelength range with a second intensity, wherein the first and second wavelength ranges are different from one another; and a resistance element having a temperature-dependent electrical resistance, wherein the first wavelength and/or the first intensity of the light emitted by the first semiconductor light source have/has a first temperature dependence, and the second wavelength range and/or the second intensity of the light emitted by the second semiconductor light source have/has a second temperature dependence, which is different from the first temperature dependence, the resistance element and the first semicond
    Type: Application
    Filed: November 13, 2009
    Publication date: December 1, 2011
    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
    Inventor: Ralph Wirth
  • Publication number: 20110291130
    Abstract: A high efficiency light emitting diode (LED) comprised of a substrate, a buffer layer grown on the substrate (if such a layer is needed), a first active region comprising primary emitting species (PES) that are electrically-injected, a second active region comprising secondary emitting species (SES) that are optically-pumped by the light emitted from the PES, and photonic crystals, wherein the photonic crystals act as diffraction gratings to provide high light extraction efficiency, to provide efficient excitation of the SES, and/or to modulate the far-field emission pattern.
    Type: Application
    Filed: August 1, 2011
    Publication date: December 1, 2011
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Frédéric S. Diana, Aurélien J. F. David, Pierre M. Petroff, Claudr C.A. Weisbuch
  • Publication number: 20110291131
    Abstract: A mortar-shaped or funnel-shaped light emitting device (50) includes: a substrate (20); at least one LED chip (25) die-bonded to the substrate (20); and a wavelength converting portion (40) covering said at least one LED chip (25); at least four planes uprising from the substrate (20); and a lens having a top surface (10a) facing the substrate (20), the four planes being positioned in four directions, respectively, in such a manner as to surround said at least one LED chip (25), and the top surface (10a) having a concave portion.
    Type: Application
    Filed: February 18, 2010
    Publication date: December 1, 2011
    Inventor: Shin Ito
  • Publication number: 20110291132
    Abstract: A light-emitting device (LED) is disclosed. The LED includes a carrier substrate having a blue light emitter thereon. A layer containing a fluorescent material is on the blue light emitter. An encapsulant is disposed around the blue light emitter. Pigments are suspended between an outer surface of the encapsulant and the blue light emitter.
    Type: Application
    Filed: May 28, 2010
    Publication date: December 1, 2011
    Inventors: Fang-Chang LIU, Kuan-Ping Lee
  • Publication number: 20110291133
    Abstract: According to one embodiment, a light emitting device includes a light emitting layer, a first conductivity type layer, a first electrode, a second conductivity type layer, a current blocking layer and a second electrode. The first conductivity type layer is provided on the light emitting layer. The first electrode is provided on the first conductivity type layer. The second conductivity type layer is provided under the light emitting layer. The current blocking layer is provided in contact with a partial region of a surface of the second conductivity type layer, and has an outer edge protruding from an outer edge of the first electrode. The second electrode is in contact with a surface of the current blocking layer on opposite side from the second conductivity type layer and a region of the surface of the second conductivity type layer not in contact with the current blocking layer.
    Type: Application
    Filed: December 6, 2010
    Publication date: December 1, 2011
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Akira TANAKA, Katsufumi Kondo, Tokuhiko Matsunaga
  • Publication number: 20110291134
    Abstract: Provided are a light emitting device, a method for fabricating the light emitting device, a light emitting device package, and a lighting unit. The light emitting device includes a support member having a stepped portion on a side surface, a light emitting structure on the support member, the light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer to generate light, and an electrode supplying a power to the first conductive type semiconductor layer. The support member has a first surface on which the light emitting structure is disposed and a second surface having an area greater than that of the first surface.
    Type: Application
    Filed: December 21, 2010
    Publication date: December 1, 2011
    Applicant: LG INNOTEK CO., LTD.
    Inventor: Gu Cheol Kang
  • Publication number: 20110291135
    Abstract: A light emitting diode package includes a silicon substrate having a first surface and a second surface opposite to the first surface, wherein the first surface includes a cavity, a light emitting diode chip fixed on a bottom of the cavity, and a glass lens secured to the silicon substrate and covering the light emitting diode chip.
    Type: Application
    Filed: March 2, 2011
    Publication date: December 1, 2011
    Applicant: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.
    Inventors: MIN-TSUN HSIEH, WEN-LIANG TSENG, LUNG-HSIN CHEN, CHIH-YUNG LIN
  • Publication number: 20110291136
    Abstract: A light-emitting element includes a substrate, a light-emitting module and at least two electrodes. The light-emitting module is formed on the substrate. The at least two electrodes are formed on the light-emitting module. Exterior surfaces of the light-emitting module are separated into a first part and a second part. The first part is defined between the at least two electrodes and the light-emitting module. The second part includes exterior surfaces not contacting the at least two electrodes. The first part is smooth. At least a part of the second part is rough.
    Type: Application
    Filed: April 26, 2011
    Publication date: December 1, 2011
    Applicant: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.
    Inventors: TZU-CHIEN HUNG, CHIA-HUI SHEN
  • Publication number: 20110291137
    Abstract: A light emitting device package is provided. The light emitting device package may include a housing including a cavity, a light emitting device disposed within the cavity, a filler filled in the cavity in order to seal the light emitting device, a fluorescent layer disposed on the filler, and an optical filter being disposed within the filler and transmitting light with a particular wavelength.
    Type: Application
    Filed: May 19, 2011
    Publication date: December 1, 2011
    Inventor: Nam Seok OH
  • Publication number: 20110291138
    Abstract: A light-emitting element package includes a package member for encapsulating a light-emitting element. A plurality of photonic crystal patterns is formed on the package member. A distribution density of the photonic crystal patterns corresponds to light distribution of the light-emitting element. Each photonic crystal pattern consists of a plurality of photonic crystals.
    Type: Application
    Filed: May 23, 2011
    Publication date: December 1, 2011
    Applicant: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.
    Inventors: MIN-TSUN HSIEH, WEN-LIANG TSENG, LUNG-HSIN CHEN, CHIH-YUNG LIN, CHING-LIEN YEH, CHI-WEI LIAO
  • Publication number: 20110291139
    Abstract: An embodiment of the invention provides a chip package which includes: a substrate having a first surface and a second surface; an optical device disposed on the first surface; a conducting pad disposed on the first surface; a first alignment mark formed on the first surface; and a light shielding layer disposed on the second surface and having a second alignment mark, wherein the second alignment mark corresponds to the first alignment mark.
    Type: Application
    Filed: May 24, 2011
    Publication date: December 1, 2011
    Inventors: Hsin-Chih CHIU, Chia-Ming Cheng, Chuan-Jin SHIU, Bai-Yao LOU
  • Publication number: 20110291140
    Abstract: Provided is a light emitting device. The light emitting device includes a light emitting structure layer including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, a gallium barrier layer on the light emitting structure layer, and a metal electrode layer on the gallium barrier layer.
    Type: Application
    Filed: May 26, 2011
    Publication date: December 1, 2011
    Inventors: Kwang Ki Choi, Ji hyung Moon, June O Song, Sang Youl Lee, Tae Yeon Seong, Se Yeon Jung, Joon Woo Jeon, Seong Han Park