Abstract: A composition includes a substrate and a carbon filament where the carbon filament has a first end in contact with the substrate and a second end that is distal to the substrate. The carbon filament may be a carbon nanofiber or carbon nanocoil. The substrate may be a glass fiber and the carbon filament may be radially attached to the glass fiber.

Abstract: There is provided an electroconductive polyamide resin composition comprising: (a) a polyamide resin component obtained from a dicarboxylic acid component comprising oxalic acid and a diamine component comprising a diamine having 4 to 12 carbon atoms, and (b) a fine carbon fiber dispersed in the resin component, wherein a graphite-net plane consisting solely of carbon atoms forms a temple-bell-shaped structural unit comprising closed head-top part and body-part with open lower-end, 2 to 30 of the temple-bell-shaped structural units are stacked sharing a common central axis to form an aggregate, and the aggregates are connected in head-to-tail style with a distance to form the fiber.

Abstract: There is provided an electroconductive resin composition comprising: (a) a polyamide resin, (b) a polyphenylene ether resin, and (c) a fine carbon fiber dispersed in the resin component, wherein a graphite-net plane consisting solely of carbon atoms forms a temple-bell-shaped structural unit comprising closed head-top part and body-part with open lower-end, 2 to 30 of the temple-bell-shaped structural units are stacked sharing a common central axis to form an aggregate, and the aggregates are connected in head-to-tail style with a distance to form the fiber. The composition has a high electroconductivity while upholding a high moldability, mechanical property and durability in the polyamide-polyphenylene ether resin.

Abstract: A method of producing particles containing metal oxide for use in semiconductor devices may include heating metal-containing particles in a flame produced by a mixture of oxygen and a fuel component comprising at least one combustible gas selected from hydrogen and hydrocarbons. The oxygen may be present in the mixture in a proportion of not less than 10 mole % below, and not more than 60 mole % above, a stoichiometric amount relative to the fuel component, so as to oxidize metal in at least an outer shell of the particles. The method may include cooling the oxidized particles by feeding them into a liquid, collecting the cooled oxidized particles; and providing a distance between entry of the particles into the flame and collection of the particles of at least 300 mm.

Abstract: Process for preparing precursors for transition metal mixed oxides, wherein (A) an optionally basic transition metal carbonate is treated thermally at temperatures in the range from 200 to 900° C., (B) washed one or more times, and (C) then dried.

Abstract: In an electric contact material of silver matrix capable of resisting arc erosion and containing no cadmium-composite, an Ag—(SnO2+In2O3) composite containing 9˜11% of (SnO2+In2O3) or an Ag—Cu oxide, composite containing 15˜25% of Cu oxide is used. The electrical contact material has a contact resistance of 5˜60 milliohms (mohm) and an arc erosion resistance capability up to 2*103˜10*103 times provided that the Vickers hardness (Hv) of the material is 100˜150, the measured current is 1˜5 amperes, and the measured voltage is 10˜20 volts. Two electrical contacts maintain an arc erosion resisting capability at the condition of a low contact resistance when the electrical contact material is formed on a surface of a metal substrate of an electric connector.

Abstract: The present invention relates to indeno-fused naphthopyrans, and in particular indeno[2?,3?:3,4]naphtho[1,2-b]pyrans having certain groups bonded to the 3, 6, 7, 11, and 13 positions thereof. The indeno-fused naphthopyrans of the present invention have an ethylenically unsaturated group selected from (C1-C6 alkyl)acrylate and (C1-C6 alkyl)acrylamide, that is linked to the 11 position or 13 position thereof. The present invention also relates to photochromic articles and photochromic compositions containing such indeno-fused naphthopyrans.

Abstract: A design method for an optical sheet for solar concentration and an optical sheet for solar concentration obtained by means of the design method are disclosed. The design method is characterized in that, for a resin optical sheet for solar concentration containing an ultraviolet absorber in a base material thereof, an amount of the ultraviolet absorber to be contained in the base material is determined such that: in an accelerated degradation test by means of a metal-halide-lamp weathering test (device specification: JTM G 01:2000, Japan Testing Machinery Association), decrease in average transmittance in a wavelength range of 400 nm to 1850 nm after testing for an irradiation time T1 satisfies the following equation (1) ?uv(0)+?uv(T1)>?0(0)+?0(T1) ??(1) and that decrease in transmittance at each of wavelengths in the wavelength range from a corresponding initial value after testing for the irradiation time T1 is not greater than 10%.

Abstract: A jacking mechanism for industrial equipment includes an insert securable in a casing hole of a first casing half of an item of industrial equipment and a jacking bolt insertable in the insert. The jacking bolt includes a jacking bolt thread meshable with an insert thread and a bearing tip secured to the jacking bolt. Advancing the jacking bolt through the insert brings the bearing tip into contact with a second casing half thus moving the first casing half relative to the second casing half. A jacking system for industrial equipment includes a plurality of jacking mechanisms configured to evenly change a gap between the first casing half and the second casing half.

Abstract: A trailer jack having a low profile which will not interfere with opening of a towing vehicle's tailgate. The jack has tubes telescopically contained within each other. A threaded rod has a threaded tube slidingly placed over it. The threaded tube has slots and a pin in the threaded rod slides within the slots for synchronous rotation. This provides even extension and retractions for the telescoping tubes relative to each other. The jack has a low profile that extends above the trailer tongue a minimal amount when the jack is extended. When the jack is retracted, no parts of the jack are raised above the tongue. Thus, the tailgate of the towing vehicle may be operated without hitting any part of the jack.

Abstract: [Problem] Provided is a wire grip, which has excellent workability for bracing the wire and which can grip a linear object for bracing the wire without applying any excessive load to the linear object.

Abstract: Apparatus and method for use in handling a load, the apparatus comprising a load bearing elongate member (2) and a load bearing mechanism for paying out and recovering the load bearing elongate member; at least one service umbilical (9, 10) and a mechanism (12) for paying out and recovering the service umbilical; at least one securing member, and a wrapping device (15, 16) for rotating the securing member around the load bearing elongate member and the service umbilical as they are being paid out and to unwrap the or each securing member from the load bearing elongate member and the service umbilical as they are recovered. The rotation of the securing member by the wrapping device is powered by power supplied via a power conduit (25) in the form of an elongate flexible conduit wrapped onto a power conduit drum that has a central axial bore arranged concentrically with the load bearing elongate member during handling of the load.

Abstract: There is provided a guard surface structure excellent in shock-absorbing effect due to an unprecedented structure formed by combining a deformable supporting surface and shock-absorbing members. A guard surface structure comprises a net body 4 supported by support posts 3, such net body 4 comprising a wire mesh 11, and being deformable and provided with shock-absorbing bags 21 filled with sands. By combining the deformable net body 4 and the shock-absorbing bags 21, a force of impact due to rockfall or the like can be effectively absorbed due to deformation behaviors of the shock-absorbing bags 21 and the net body 4. In this case, sands inside the shock-absorbing bags 21 are caused to move when subjected to the force of impact, thereby allowing the shock-absorbing bags 21 to deform and thus absorb the force of impact. Further, the net body 4 deforms after the force of impact has been first applied to the shock-absorbing bags 21, thus allowing the net body 4 to deform less.

Abstract: A bendable handrail assembly of an exercise apparatus wherein the handrail assembly is divided into a fixed portion and a bent portion. The fixed portion is coupled with a tube and positioned at an inclined angle relative to the handrail support of the exercise apparatus. The bent portion includes at one end thereof an inclined shaft fitting into the tube, and the bent portion is positioned by means of an elastic element and a positioning element in a pivotable state. At that time, the bent portion can be brought in a nearly horizontal position relative to the ground. When the handrail assembly is bent, the bent portion can rotate on the inclined shaft along the inclined angle (Z-axis of space) in a vertical position relative to the ground.

Abstract: In a porch or patio railing system having a plurality of vertically disposed pickets, a harmonic stabilizer for dampening forced external harmonic resonance is applied thereto. Each harmonic stabilizer includes an elongated member having a c-shape configuration formed by three wall members including a back wall and a left and right side wall all integrally attached at right angles in relation to one another. A center channel of the elongated member is defined by the three side walls and also includes an open end for providing access to the center channel. A pair of inwardly extending notches attached along outer edges of the left and right side walls provides a friction fit mating mechanism when the harmonic stabilizer is employed onto one of the plurality of vertically disposed pickets.

Abstract: Provided is a nonvolatile memory device including a phase-change memory configured with cross-point memory cells in which memory elements formed of a phase-change material and selection elements formed with a diode are combined. A memory cell is configured with a memory element formed of a phase-change material and a selection element formed with a diode having a stacked structure of a first polycrystalline silicon film, a second polycrystalline silicon film, and a third polycrystalline silicon film. The memory cells are arranged at intersection points of a plurality of first metal wirings extending along a first direction with a plurality of third metal wirings extending along a second direction orthogonal to the first direction. An interlayer film is formed between adjacent selection elements and between adjacent memory elements, and voids are formed in the interlayer film provided between the adjacent memory elements.

Abstract: Embodiments of the present invention are directed to nanoscale memristor devices that provide nonvolatile memristive switching. In one embodiment, a memristor device (100) comprises an active region (102), a first electrode (104) disposed on a first surface of the active region, and a second electrode (106) disposed on a second surface of the active region, the second surface opposite the first surface. The first electrode is configured with a larger width than the active region in a first direction, and the second electrode is configured with a larger width than the active region in a second direction. Application of a voltage to at least one of the electrodes produces an electric field across a sub-region (108) within the active region between the first electrode and the second electrode.

Abstract: Some embodiments include a memory device having first structures arranged in a first direction and second structures arranged in a second direction. At least one structure among the first and second structures includes a semiconductor material. The second structures contact the first structures at contact locations. A region at each of the contact locations is configured as memory element to store information based on a resistance of the region. The structures can include nanowires. Other embodiments are described.

Abstract: The present invention relates to a transparent memory for a transparent electronic device. The transparent memory includes: a lower transparent electrode layer that is sequentially formed on a transparent substrate, and a data storage region and an upper transparent layer which are made of at least one transparent resistance-variable material layer. The transparent resistance-variable material layer has switching characteristics as a result of the resistance variance caused by the application of a certain voltage between the lower and upper transparent electrode layers. An optical band gap of the transparent resistance-variable material layer is 3 eV or more, and transmittivity of the material layer for visible rays is 80% or more. The invention provides transparent and resistance-variable memory that: has very high transparency and switching characteristics depending on resistance variation at a low switching voltage, and can maintain the switching characteristics thereof after a long time elapses.

Abstract: A resistive switching memory device is provided with first to third electrodes. The first electrode forms a Schottky barrier which can develop a rectifying property and resistance change characteristics at an interface between the first electrode and an oxide semiconductor. The third electrode is made of a material which provides an ohmic contact with the oxide semiconductor. A control voltage is applied between the first and second electrodes, and a driving voltage is applied between the first and third electrodes.

Abstract: Phase change memory elements, devices and systems using the same and methods of forming the same are disclosed. A memory element includes first and second electrodes, and a phase change material layer between the first and second electrodes. The phase change material layer has a first portion with a width less than a width of a second portion of the phase change material layer. The first electrode, second electrode and phase change material layer may be oriented at least partially along a same horizontal plane.

Abstract: A method for fabricating an electronic component, comprising providing a substrate; and depositing a graphene layer; wherein the substrate is either provided with a van-der-Waals functional layer or a van-der-Waals functional layer is deposited on the substrate before depositing the graphene layer; a surface step contour is formed; and growth of the graphene layer is seeded at the step contour.

Abstract: A field effect transistor device includes: a reservoir bifurcated by a membrane of three layers: two electrically insulating layers; and an electrically conductive gate between the two insulating layers. The gate has a surface charge polarity different from at least one of the insulating layers. A nanochannel runs through the membrane, connecting both parts of the reservoir. The device further includes: an ionic solution filling the reservoir and the nanochannel; a drain electrode; a source electrode; and voltages applied to the electrodes (a voltage between the source and drain electrodes and a voltage on the gate) for turning on an ionic current through the ionic channel wherein the voltage on the gate gates the transportation of ions through the ionic channel.

Abstract: A nitride semiconductor light emitting device includes n-type and p-type nitride semiconductor layers; an active layer disposed between the n-type and p-type nitride semiconductor layers and having a structure in which a plurality of quantum barrier layers and one or more quantum well layers are alternately stacked; and an electron blocking layer disposed between the active layer and the p-type nitride semiconductor layer. The electron blocking layer has a superlattice structure in which two or more layers having different compositions are alternately stacked.

Abstract: A light emitting device includes a metal backing layer, a reflective electrode layer disposed on the metal backing layer, and a plurality of nanorods disposed on the reflective electrode layer. Each nanorod includes a p-semiconductor layer, an active layer, and an n-semiconductor layer, which are sequentially stacked on the reflective electrode layer. The light emitting device further includes an anti-reflection electrode layer disposed on the nanorods, and quantum dots disposed between the nanorods. The method includes sequentially growing the n-semiconductor layer, the active layer, and the p-semiconductor layer on a substrate; forming the nanorods by etching the p-semiconductor layer using a mask pattern; sequentially forming the reflective electrode layer and the metal backing layer on the p-semiconductor layer and then removing the substrate; disposing quantum dots between the nanorods; and forming the anti-reflection electrode layer on the nanorods.

Abstract: A high luminance semiconductor light emitting device and fabrication method thereof, wherein a metallic reflecting layer is formed using a non-transparent semiconductor substrate. The device includes a light emitting diode structure on a GaAs substrate structure bonded together using a first and a third metal layers. The substrate includes a GaAs layer, a first metal buffer layer on a surface of the GaAs layer, the first metal layer on the first metal buffer layer, and a second metal buffer layer and a second metal layer at a back side of the GaAs layer. The diode structure includes the third metal layer, a metal contact layer on the third metal layer, a p-type cladding layer on the metal contact layer, a multi-quantum well layer on the p-type cladding layer, an n-type cladding layer on the multi-quantum well layer, and a window layer on the n-type cladding layer.

Abstract: A light emitting device includes an active layer including a quantum barrier and a quantum well, a first conductive type semiconductor layer disposed at one side of the active layer, and a second conductive type semiconductor layer disposed at the other side of the active layer, wherein the first conductive type semiconductor layer or the second conductive type semiconductor layer includes a main barrier layer, and the main barrier layer includes a plurality of sub barrier layers and a basal layer disposed between the plurality of sub barrier layers. The plurality of sub barrier layers includes a first section in which energy band gaps of the plurality of sub barrier layers are increased and a second section in which energy band gaps of the plurality of sub barrier layers are decreased.

Abstract: Precision quantum dot clusters and methods for producing and tuning quantum dot clusters are described herein. Also described herein are materials and devices, including photovoltaic devices, that may include one or more quantum dot clusters.

Abstract: Disclosed herein is a nano device, including: a carbon layer including one-layered graphene having a honeycombed planar structure in which carbon atoms are connected with each other and two or more-layered monocrystalline graphite; and one or more vertically-grown nanostructures formed on the carbon layer. This nano device can be used to manufacture an integrated circuit in which various devices including a graphene electronic device and a photonic device are connected with each other, and is a high-purity and high-quality nano device having a small amount of impurities because a metal catalyst is not used.

Abstract: A graphene electronic device includes a gate electrode, a gate oxide disposed on the gate electrode, a graphene channel layer formed on the gate oxide, and a source electrode and a drain electrode respectively disposed on both ends of the graphene channel layer. In the graphene channel layer, a plurality of nanoholes are arranged in a single line in a width direction of the graphene channel layer.

Abstract: In at least one embodiment of the organic optoelectronic component (1), the latter comprises a carrier (2) and a first electrode (11), which is mounted on the carrier (2). Furthermore, the component (1) contains at least one organic layer sequence (3) with at least one organic active layer (33). Furthermore, the component (1) comprises a second electrode (22), such that the organic layer sequence (3) is located between the first electrode (11) and the second electrode (22). At least one dark region (4) and at least one bright region (5) are formed in a lateral direction. In both the dark region (4) and the bright region (5), both the first electrode (11) and the second electrode (22) and also the organic layer sequence (3) are applied to the carrier (2) in places or over the entire surface. A first reflectivity of the dark region (4) differs from a second reflectivity of the bright region (5) by at most 15 percentage points.

Abstract: An organic electroluminescent device includes at least two light-emissive units provided between a cathode electrode and an anode electrode opposed to the cathode electrode, each of the light-emissive units including at least one light-emissive layer. The light-emissive units are partitioned from each other by at least one charge generation layer, the charge generation layer being an electrically insulating layer having a resistivity of not less than 1.0×102 ?cm.

Abstract: A novel benzoxazole derivative having high excitation energy, particularly high triplet excitation energy is provided. A light-emitting element having high current efficiency is provided by application of the novel benzoxazole derivative for the light-emitting element. A light-emitting device, an electronic device, and a lighting device each having reduced power consumption are provided. The benzoxazole derivative is represented by General Formula (G1). In the formula, R11 to R14 and R21 to R27 separately represent any one of hydrogen, an alkyl group having 1 to 4 carbon atoms, and a substituted or unsubstituted aryl group having 6 to 13 carbon atoms, Ar represents a substituted or unsubstituted arylene group having 6 to 13 carbon atoms, and Z represents either a sulfur atom or an oxygen atom.

Abstract: A diffraction grating having a transparent supporting substrate; and a cured resin layer which is stacked on the transparent supporting substrate and which has concavities and convexities formed on a surface thereof, wherein when a Fourier-transformed image is obtained by performing two-dimensional fast Fourier transform processing on a concavity and convexity analysis image obtained by analyzing a shape of the concavities and convexities formed on the surface of the cured resin layer by use of an atomic force microscope, the Fourier-transformed image shows a circular or annular pattern substantially centered at an origin at which an absolute value of wavenumber is 0 ?m?1, and the circular or annular pattern is present within a region where an absolute value of wavenumber is within a range of 10 ?m?1 or less.

Abstract: The present invention relates to compositions comprising functionalized or un-functionalized multi cyclic hydrocarbons and functional organic compounds, which can be used in different electronic devices. The invention further relates to an electronic device comprising one or more organic functional layers, wherein at least one of the layers comprises at least one functionalized or un-functionalized multi cyclic hydrocarbon. Another embodiment of the present invention relates to a formulation comprising functionalized or un-functionalized multi cyclic hydrocarbons, from which a thin layer comprising at least one functionalized or un-functionalized multi cyclic hydrocarbon can be formed.

Abstract: A nitrogen-containing heterocyclic derivative represented by the following formula (1): wherein any “12-a” groups of R1 to R12 are independently a hydrogen atom, a fluorine atom, a substituted or unsubstituted aryl group having 6 to 30 ring carbon atoms or a substituted or unsubstituted heterocyclic group having 5 to 30 ring atoms; any “a” groups of R1 to R12 are independently a single bond which is bonded to L1; L1 is a single bond, a “b+1” valent substituted or unsubstituted hydrocarbon ring group having 6 to 30 ring carbon atoms or a “b+1” valent substituted or unsubstituted heterocyclic group having 5 to 30 ring atoms; HAr is a substituted or unsubstituted nitrogen-containing heterocyclic group; and “a” and “b” are independently an integer of 1 to 4, and at least one of “a” and “b” is 1.

Abstract: An organic electroluminescent element comprising: an anode (3); a cathode (4); and an organic layer (5), sandwiched between the anode (3) and the cathode (4), which contains a positive and negative charge transporting material, the organic layer (5) including an acceptor region (6) doped with an acceptor, a donor region (8) doped with a donor, and a light-emitting region (7) doped with an organic light-emitting material, the acceptor region (6) being located on the anode (3), the donor region (8) being located on the cathode (4), the light-emitting region (7) being located between the acceptor region (6) and the donor region (8), the acceptor having such a concentration gradient in the acceptor region (6) as to become lower in concentration from the anode (3) toward the light-emitting region (7), the donor having such a concentration gradient in the donor region (8) as to become lower in concentration from the cathode (4) toward the light-emitting region (7).

Abstract: An organic light-emitting device includes an anode, a cathode, and an organic compound layer interposed between the anode and the cathode. The organic compound layer contains a pyrene derivative.

Abstract: A normally-off transistor having an oxide semiconductor layer in a channel formation layer is provided. The transistor comprises: a first oxide semiconductor layer functioning as a channel formation region; a source electrode layer and a drain electrode layer which overlap with the first oxide semiconductor layer; a gate insulating layer which is provided over and in contact with the first oxide semiconductor layer, the source electrode layer, and the drain electrode layer; a second oxide semiconductor layer which is provided over and in contact with the gate insulating layer and overlaps with the first oxide semiconductor layer; and a gate electrode layer provided over the second oxide semiconductor layer. A manufacturing method thereof is also disclosed.

Abstract: A highly reliable semiconductor device is manufactured by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. An oxide semiconductor film which can have a first crystal structure by heat treatment and an oxide semiconductor film which can have a second crystal structure by heat treatment are formed so as to be stacked, and then heat treatment is performed; accordingly, crystal growth occurs with the use of an oxide semiconductor film having the second crystal structure as a seed, so that an oxide semiconductor film having the first crystal structure is formed. An oxide semiconductor film formed in this manner is used for an active layer of the transistor.

Abstract: An object to provide a material suitably used for used for a semiconductor included in a transistor, a diode, or the like, with the use of a sputtering method. Specifically, an object is to provide a manufacturing process an oxide semiconductor film having high crystallinity. By intentionally adding nitrogen to the oxide semiconductor, an oxide semiconductor film having a wurtzite crystal structure that is a hexagonal crystal structure is formed. In the oxide semiconductor film, the crystallinity of a region containing nitrogen is higher than that of a region hardly containing nitrogen or a region to which nitrogen is not intentionally added. The oxide semiconductor film having high crystallinity and having a wurtzite crystal structure is used as a channel formation region of a transistor.

Abstract: An object is to provide a transistor in which the state of an interface between an oxide semiconductor layer and an insulating film (gate insulating layer) in contact with the oxide semiconductor layer is favorable; and a method for manufacturing the transistor. In order to obtain the transistor, nitrogen is added to a region of the oxide semiconductor layer in the vicinity of the interface with the gate insulating layer. Specifically, a concentration gradient of nitrogen is formed in the oxide semiconductor layer, and a region containing much nitrogen is provided at the interface with the gate insulating layer. By the addition of nitrogen, a region with high crystallinity can be formed in the region of the oxide semiconductor layer in the vicinity of the interface with the gate insulating layer, so that a stable interface state can be obtained.

Abstract: A transistor in which the state of an interface between an oxide semiconductor layer and an insulating film in contact with the oxide semiconductor layer is favorable and a method for manufacturing the transistor are provided. Nitrogen is added to the vicinity of the interface between the oxide semiconductor layer and the insulating film (gate insulating layer) in contact with the oxide semiconductor layer so that the state of the interface of the oxide semiconductor layer becomes favorable. Specifically, the oxide semiconductor layer has a concentration gradient of nitrogen, and a region containing much nitrogen is provided at the interface with the gate insulating layer. A region having high crystallinity can be formed in the vicinity of the interface with the oxide semiconductor layer by addition of nitrogen, whereby the interface state can be stable.

Abstract: One of objects is to provide a semiconductor film having stable characteristics. Further, one of objects is to provide a semiconductor element having stable characteristics. Further, one of objects is to provide a semiconductor device having stable characteristics. Specifically, a structure which includes a seed crystal layer (seed layer) including crystals each having a first crystal structure, one of surfaces of which is in contact with an insulating surface, and an oxide semiconductor film including crystals growing anisotropically, which is on the other surface of the seed crystal layer (seed layer) may be provided. With such a heterostructure, electric characteristics of the semiconductor film can be stabilized.

Abstract: In a thin film transistor, a gate insulating layer is formed on a gate electrode formed on an insulating substrate. Formed on the gate insulating layer is a semiconductor layer. Formed on the semiconductor layer are a source electrode and a drain electrode. A protective layer covers them, so that the semiconductor layer is blocked from an atmosphere. The semiconductor layer (active layer) is made of, e.g., a semiconductor containing polycrystalline ZnO to which, e.g., a group V element is added. This allows practical use of a semiconductor device which has an active layer made of zinc oxide and which includes an protective layer for blocking the active layer from an atmosphere.

Abstract: A thin film transistor includes: an insulating layer; a gate electrode provided on the insulating layer; a gate insulating film provided on the gate electrode; a semiconductor layer provided on the gate insulating film, the semiconductor layer being formed of oxide; a source electrode and a drain electrode provided on the semiconductor layer; and a channel protecting layer provided between the source and drain electrodes and the semiconductor layer. The source electrode is opposed to one end of the gate electrode. The drain electrode is opposed to another end of the gate electrode. The another end is opposite to the one end. The drain electrode is apart from the source electrode. The channel protecting layer covers at least a part of a side face of a part of the semiconductor layer. The part of the semiconductor layer is not covered with the source electrode and the drain electrode above the gate electrode.

Abstract: One of the objects of the present invention is to provide a thin film transistor using an oxide semiconductor film containing indium (In), gallium (Ga), and zinc (Zn), in which the contact resistance between the oxide semiconductor layer and a source and drain electrodes is reduced, and to provide a method for manufacturing the thin film transistor. An ohmic contact is formed by intentionally providing a buffer layer having a higher carrier concentration than the IGZO semiconductor layer between the IGZO semiconductor layer and the source and drain electrode layers.

Abstract: A transistor is constituted of a gate electrode 2, a gate insulation layer 3, a semiconductor layer 4 formed of an amorphous oxide, a source electrode 5, a drain electrode 6 and a protective layer 7. The protective layer 7 is provided on the semiconductor layer 4 in contact with the semiconductor layer 4, and the semiconductor layer 4 includes a first layer at least functioning as a channel layer and a second layer having higher resistance than the first layer. The first layer is provided on the gate electrode 2 side of the semiconductor layer 4 and the second layer is provided on the protective layer 7 side of the semiconductor layer 4.

Abstract: A MOSFET cell of a semiconductor device includes a polysilicon gate electrode and an n+-source region formed in an upper portion of an n?-drift layer. An interlayer insulating film covers the gate electrode. An Al source electrode extends on the interlayer insulating film. An Al gate pad is connected to the gate electrode. A barrier metal layer that prevents diffusion of aluminum is interposed between the source electrode and the interlayer insulating film, and between the gate pad and the gate electrode.

Abstract: The present disclosure reduces and, in some instances, eliminates the density of interface states in III-V compound semiconductor materials by providing a thin crystalline interlayer onto an upper surface of a single crystal III-V compound semiconductor material layer to protect the crystallinity of the single crystal III-V compound semiconductor material layer's surface atoms prior to further processing of the structure.