Abstract: Avalanche photodiodes and methods for forming them are disclosed. The breakdown voltage of an avalanche photodiode is controlled through the inclusion of a diffusion sink that is formed at the same time as the device region of the photodiode. The device region and diffusion sink are formed by diffusing a dopant into a semiconductor to form a p-n junction in the device region. The dopant is diffused through a first diffusion window to form the device region and a second diffusion window to form the diffusion sink. The depth of the p-n junction is based on an attribute of the second diffusion window.

Abstract: A photoelectric conversion element of the present invention comprises: a first semiconductor layer of a first conductivity type; a first electrode arranged on the back side of the first semiconductor layer a second semiconductor layer of a second conductivity type, the second semiconductor layer on the light-receiving side of the first semiconductor layer; a light-receiving face-side electrode provided on the light-receiving side of the second semiconductor layer; a second electrode arranged on the back side of the first semiconductor layer, and electrically separated from the first semiconductor layer, but connected to the second semiconductor layer; and a penetrating-connecting section penetrating the first semiconductor layer, and connecting the light-receiving face-side electrode with the second electrode, wherein the photoelectric conversion element is characterized in that the first electrode and the second electrode are arranged equidistantly apart from a central axis passing through a center of the ph

Abstract: A schottky diode includes a drift region of a first conductivity type and a lightly doped silicon region of the first conductivity type in the drift region. A conductor layer is over and in contact with the lightly doped silicon region to form a schottky contact with the lightly doped silicon region. A highly doped silicon region of the first conductivity type is in the drift region and is laterally spaced from the lightly doped silicon region such that upon biasing the schottky diode in a conducting state, a current flows laterally between the lightly doped silicon region and the highly doped silicon region through the drift region. A plurality of trenches extend into the drift region perpendicular to the current flow. Each trench has a dielectric layer lining at least a portion of the trench sidewalls and at least one conductive electrode.

Abstract: Methods of forming metal oxide structures and methods of forming metal oxide patterns on a substrate using a block copolymer system formulated for self-assembly. A block copolymer at least within a trench in the substrate and including at least one soluble block and at least one insoluble block may be annealed to form a self-assembled pattern including a plurality of repeating units of the at least one soluble block laterally aligned with the trench and positioned within a matrix of the at least one insoluble block. The self-assembled pattern may be exposed to a metal oxide precursor that impregnates the at least one soluble block. The metal oxide precursor may be oxidized to form a metal oxide. The self-assembled pattern may be removed to form a pattern of metal oxide lines on the substrate surface. Semiconductor device structures are also described.

Abstract: A method of repairing a semiconductor device includes forming a first conductive interconnection and a second conductive interconnection spaced from the first conductive interconnection on a semiconductor substrate, forming a magnetic fuse on the first conductive interconnection and forming a first contact plug on the second conductive interconnection, forming a metal interconnection on the magnetic fuse and the first contact plug, and applying a bias to the first conductive interconnection or to the second conductive interconnection corresponding to a normal cell or a redundancy cell and the metal interconnection. The method can readily prevent the problems caused in a laser cutting method without using a method of physically cutting a fuse by radiation of a laser when a semiconductor device fuse is repaired.

Abstract: A fuse of a semiconductor device includes first fuse metals formed over an underlying structure and a second fuse metal formed between the first fuse metals. Accordingly, upon blowing, the fuse metals are not migrated under conditions, such as specific temperature and specific humidity. Thus, reliability of a semiconductor device can be improved.

Abstract: A dielectric wafer has, on top of its front face, a front electrical connection including an electrical connection portion. A blind hole passes through from a rear face of the wafer to at least partially reveal a rear face of the electrical connection portion. A through capacitor is formed in the blind hole. The capacitor includes a first conductive layer covering the lateral wall and the electrical connection portion (forming an outer electrode), a dielectric intermediate layer covering the first conductive layer (forming a dielectric membrane), and a second conductive layer covering the dielectric intermediate layer (forming an inner electrode). A rear electrical connection is made to the inner electrode.

Abstract: A main blind hole is formed in a front face of a wafer having a rear face. A through capacitor is formed in the main blind hole including a conductive outer electrode, a dielectric intermediate layer, and a filling conductive material forming an inner electrode. Cylindrical portions of the outer electrode, the dielectric intermediate layer and the inner electrode have front ends situated in a plane of the front face of the wafer. A secondary rear hole is formed in the rear face of the wafer to reveal a bottom of the outer electrode. A rear electrical connection is made to contact the bottom of the outer electrode through the secondary rear hole. A through hole via filled with a conductive material is provided adjacent the through capacitor. An electrical connection is made on the rear face between the rear electrical connection and the through hole via.

Abstract: Methods of fabricating a passive element and a semiconductor device including the passive element are disclosed including the use of a dummy passive element. A dummy passive element is a passive element or wire which is added to the chip layout to aid in planarization but is not used in the active circuit. One embodiment of the method includes forming the passive element and a dummy passive element adjacent to the passive element; forming a dielectric layer over the passive element and the dummy passive element, wherein the dielectric layer is substantially planar between the passive element and the dummy passive element; and forming in the dielectric layer an interconnect to the passive element through the dielectric layer and a dummy interconnect portion overlapping at least a portion of the dummy passive element. The methods eliminate the need for planarizing.

Abstract: A method of forming an integrated circuit device includes forming a plurality of deep trench decoupling capacitors on a first substrate; forming a plurality of active circuit devices on a second substrate; bonding the second substrate to the first substrate; and forming electrical connections between the deep trench capacitors and the second substrate.

Abstract: According to an embodiment, a method for manufacturing a semiconductor device is provided. The method includes providing a mask layer which is used as an implantation mask when forming a doping region and which is used as an etching mask when forming an opening and a contact element formed in the opening. The contact element is in contact with the doping region.

Abstract: An apparatus includes an electrostatic discharge (ESD) protection device configured to protect a circuit from ESD conditions. The protection device includes an emitter region having a first diffusion polarity; a collector region laterally spaced apart from the emitter region, and having the first diffusion polarity; and a barrier region interposed laterally between the emitter region and the collector region while contacting the emitter region. The barrier region has a second diffusion polarity opposite from the first diffusion polarity. The device can further include a base region having the second diffusion polarity, and laterally surrounding and underlying the emitter region and the barrier region. The barrier region can have a higher dopant concentration than the base region, and block a lateral current flow between the collector and emitter regions, thus forming a vertical ESD device having enhanced ESD performance.

Abstract: An electrically actuated device includes a first electrode, a second electrode, and an active region disposed between the first and second electrodes. The device further includes at least one of dopant initiators or dopants localized at an interface between i) the first electrode and the active region, or ii) the second electrode and the active region, or iii) the active region and each of the first and second electrodes.

Abstract: A semiconductive substrate that is suitable for realising electronic and/or optoelectronic devices that include at least one substrate, in particular of single crystal silicon, and an overlying layer of single crystal silicon. Advantageously, the semiconductive substrate comprises at least one functional coupling layer suitable for reducing the defects linked to the differences in the materials used. The functional coupling layer can comprise a corrugated portion made in the layer of single crystal silicon and suitable for reducing the defects linked to the differences in lattice constant of such materials used. Alternatively, the functional coupling layer can comprise a porous layer arranged between the substrate of single crystal silicon and the layer of single crystal silicon, and suitable for reducing the stress caused by the differences between the thermal expansion coefficients of the materials used. A manufacturing process of such a semiconductive substrate is also described.

Abstract: A semiconductor structure includes a thin semiconductor layer fixed on an applicator or flexible support, the thin layer having an exposed surface characterized by fractured solid bridges spaced apart by cavities. A method of producing the thin layer of semiconductor material includes implanting ions into the semiconductor wafer to define a reference plane, where the ion dose is above a minimum dose, but below a critical dose so as to avoid degrading the wafer surface. The method further includes applying a thermal treatment to define a layer of microcavities and applying stress to free the thin layer from the wafer.

Abstract: A method for nanostructuring a film (2) of material includes a step of immersing the film (2) of material in an aqueous solution (3), during which an interference FIG. 6) including illuminated areas (6b) and dark areas (6a) is applied to at least one of the faces of the film (2). The material is a semiconductor inorganic material or oxide, which is able to be solubilised in aqueous solution under the effect of the absorption of light. The nanostructuring of the film (2) is effected, at its surface in contact with the aqueous solution (3), by photodissolution in the illuminated areas (6a) and/or by growth in the dark areas (6b) of the interference FIG. 6). Also described is a nanostructured coating film (5) obtained according to such a preparation method, as well as a nanostructured 3D film.

Abstract: The disclosure provides a TSV substrate structure and the stacked assembly of a plurality of the substrate structures, the TSV substrate structure including: a substrate comprising a first surface, a corresponding second surface, and a TSV communicating the first surface with the second surface through the substrate; and a conductor unit completely filling the TSV, the conductor unit comprising a conductor body which has a first and a second ends corresponding to the first and second surfaces of the substrate, respectively.

Abstract: Consistent with an example embodiment, there is a semiconductor device with nanowire-type interconnect elements. The semiconductor device comprises a semiconductor substrate with a pn junction formed by a first doped substrate region of a first conductivity type, and a second doped substrate region of an opposite second conductivity type. There is a layer structure on the semiconductor substrate, the layer structure includes a first metal structure which is conductively connected with the first doped substrate region, and further comprising a second metal structure, which is conductively connected with the second doped substrate region. The layer structure allows the transmission of photons with an energy suitable for creating free charge carriers in the first and second doped substrate regions. A third metal structure comprising at least one self-assembled metal dendrite forms an interconnect element between the first and second metal structures.

Abstract: A package having ESD (electrostatic discharge) and EMI (electromagnetic interference) preventing functions includes: a substrate unit having a ground structure and an I/O structure disposed therein; at least a semiconductor component disposed on a surface of the substrate unit and electrically connected to the ground structure and the I/O structure; an encapsulant covering the surface of the substrate unit and the semiconductor component; and a metal layer disposed on exposed surfaces of the encapsulant and side surfaces of the substrate unit and electrically insulated from the ground structure, thereby protecting the semiconductor component against ESD and EMI so as to improve the product yield and reduce the risk of short circuits.

Abstract: A method of manufacture of an integrated circuit packaging system includes: forming a base structure having an intermediate lead with an intermediate concave side and an intermediate convex side, a peripheral lead with a peripheral concave side and a peripheral convex side, and a paddle with a paddle concave side and a paddle convex side; applying an inner multi-layer finish directly on the intermediate concave side, the peripheral concave side, and the paddle concave side; applying an outer multi-layer finish directly on the intermediate convex side, the peripheral convex side, and the paddle convex side; mounting an integrated circuit device over the inner multi-layer finish; attaching an interconnect directly to the inner multi-layer finish on the peripheral concave side and directly to integrated circuit device; and applying an encapsulation over the integrated circuit device, the interconnect, and the base structure, with the outer multi-layer finish exposed from the encapsulation.

Abstract: In a lead frame for an electronic component according to the present invention, a metal plate 3 is extended by a punch 5 into a hole 4 formed on a metal plate 2 and the two metal plates are connected on the inner surface of the hole 4, thereby improving a bonding strength while keeping the small size and thickness of the lead frame with a simple method.

Abstract: A semiconductor device includes a base film, a semiconductor chip mounted on the base film, and a plurality of leads formed on the base film, each of the leads including one end coupled to the semiconductor chip and another end being opposite to the one end. The another end of a first one of the leads and the another end of a second one of the leads are located at different positions respectively between the semiconductor chip and a cut line along which the base film is cut.

Abstract: A method of manufacture of an integrated circuit packaging system includes: providing a connection structure having a component pad, an outer pad, and an inner pad, the inner pad between the component pad and the outer pad; forming a support structure between the inner pad and the outer pad; mounting an integrated circuit device over the component pad; attaching an interconnect to the integrated circuit device and the outer pad, the interconnect above the inner pad and supported by the support structure; and applying an encapsulation over the connection structure, the interconnect, and the integrated circuit device.

Abstract: A clip interconnect comprises a columnar part, a bridge part, and a locking feature. The bridge part has a plurality of sides. The columnar part and the bridge part are configured to form an angle at an interface between the columnar part and the bridge part. The locking feature is located in at least one of the plurality of sides of the bridge part. The locking feature comprises an alternating pattern of teeth and valleys.

Abstract: An integrated circuit package system includes a trace frame includes: an encapsulant; a first series of bonding pads along a length of the encapsulant; a second series of the bonding pads along a width of the encapsulant; conductive traces for connecting the bonding pads of the first series to the bonding pads of the second series in a one to one correspondence; and a first integrated circuit die on the encapsulant and on the conductive traces that extend beyond the first integrated circuit die.

Abstract: A semiconductor package includes a block for encapsulating a microchip and its electrical connection wires. The encapsulating block has at least one front recess disposed on top of the microchip. A thermally conducting filling material fills the front recess so as to form a thermal via. A radiating structure is attached over the encapsulating block and in thermal communication with the thermal via.

Abstract: There is provided a semiconductor chip having four sides and being substantially formed in a rectangle, the semiconductor chip including: a first terminal which is located along one side of the four sides of the semiconductor chip and which is to be electrically connected to a solar cell outside the semiconductor chip; a second terminal which is located along the one side of the semiconductor chip and which is to be electrically connected to a secondary cell outside the semiconductor chip; and an interconnection line that electrically interconnects the first terminal and the second terminal.

Abstract: Some embodiments provide a semiconductor device including a substrate having a first surface and an opposite second surface. An electrode extends within the substrate towards the first surface and has a protruding portion extending from the first surface. A supporting portion extends from the first surface of the substrate to a sidewall of the protruding portion that supports the protruding portion. Methods of fabricating the same are also provided.

Abstract: A mounting structure of chip comprises a substrate having a base, a chip on the upper surface of the base, and adhesive agents which bonds the base and the first chip. The adhesive agent is applied to the upper surface of the base. The chip has a rectangular shape to have a width and a length, and is bonded at its lower surface to the base. The adhesive agents comprises the first adhesive agent, the second adhesive agent, and the third adhesive agent which are disposed on the three spots of the upper surface of the base, respectively. The three spots on the base are located on vertexes of a triangle. The first chip is bonded to the base by only the first adhesive agent, the second adhesive agent, and the third adhesive agent.

Abstract: A flip chip interconnect has a tapering interconnect structure, and the area of contact of the interconnect structure with the site on the substrate metallization is less than the area of contact of the interconnect structure with the die pad. Also, a bond-on-lead or bond-on-narrow pad or bond on a small area of a contact pad interconnection includes such tapering flip chip interconnects. Also, methods for making the interconnect structure include providing a die having interconnect pads, providing a substrate having interconnect sites on a patterned conductive layer, providing a bump on a die pad, providing a fusible electrically conductive material either at the interconnect site or on the bump, mating the bump to the interconnect site, and heating to melt the fusible material.

Abstract: According to one embodiment, a via and trench are formed in a semiconductor structure. The via and the trench are suitable for having a metal-based wire placed therein by damascene, dual damascene, plating and other suitable techniques. The via is etched into a dielectric layer of a semiconductor structure comprising a base cap layer, the dielectric layer formed over the base cap layer, and a hardmask formed over the dielectric layer. The via is filled with a sacrifice material, where the sacrifice material contains a metal or a metal compound, where the sacrifice material additionally forms a sacrifice layer over the hardmask layer. The sacrifice material placed in the via does not contain a material or film containing a Si—O bond. The sacrifice material is used as a support for a photomask that is placed over the sacrifice layer, where the photomask is developed to have a trench pattern formed therein.

Abstract: Even when a stiffener is omitted, the semiconductor device which can prevent the generation of twist and distortion of a wiring substrate is obtained. As for a semiconductor device which has a wiring substrate, a semiconductor chip by which the flip chip bond was made to the wiring substrate, and a heat spreader adhered to the back surface of the semiconductor chip, and which omitted the stiffener for reinforcing a wiring substrate and maintaining the surface smoothness of a heat spreader, a wiring substrate has a plurality of insulating substrates in which a through hole whose diameter differs, respectively was formed, and each insulating substrate contains a glass cloth.

Abstract: A semiconductor structure and a process thereof are provided. The semiconductor structure includes a semiconductor wafer having a first surface and a second surface opposite to the first surface, through silicon vias and a crack stopping slot. The through silicon vias are embedded in the semiconductor wafer and connected between the first surface and the second surface. The crack stopping slot is located in the periphery of the second surface of the semiconductor wafer. The depth of the crack stopping slot is less than or equal to the thickness of the semiconductor wafer. The process firstly provides a semiconductor wafer having through silicon vias. Then, the aforementioned crack stopping slot is formed at a back side of the semiconductor wafer opposite to the first surface. Next, the semiconductor wafer is thinned from the back side to expose a second end of each through silicon via.

Abstract: Therefore, a method of plating wafer via holes in a wafer is provided. A substrate (200) having a first and second side and a plurality of wafer via holes (210) is provided. Each via hole comprises a first and second end extending between the first and second side. A first seed layer (220) is deposited on the first side of the 5 wafer (200). A foil (250) is applied on the first seed layer (220) of the wafer closing the first ends of the plurality of wafer via holes (210). The second side of the wafer (200) is electro-chemically plated and the foil (250) is removed.

Abstract: In one embodiment, a semiconductor device includes a semiconductor substrate having a first surface, and a second surface opposite to the first surface. The second surface defines a redistribution trench. The substrate has a via hole extending therethrough. The semiconductor device also includes a through via disposed in the via hole. The through via may include a via hole insulating layer, a barrier layer, sequentially formed on an inner wall of the via hole. The through via may further include a conductive connector adjacent the barrier layer. The semiconductor device additionally includes an insulation layer pattern formed on the second surface of the substrate. The insulation layer pattern defines an opening that exposes a region of a top surface of the through via. The semiconductor devices includes a redistribution layer disposed in the trench and electrically connected to the through via. The insulation layer pattern overlaps a region of the conductive connector.

Abstract: A method of fabricating a semiconductor device, a process of fabricating a through substrate via and a substrate with through vias are provided. The substrate with through vias includes a semiconductor substrate having a back surface and a via penetrating the back surface, a metal layer, a first insulating layer and a second insulating layer. The first insulating layer is formed on the back surface of the substrate and has an opening connected to the through via. The second insulating layer is formed on the first insulating layer and has a portion extending into the opening and the via to form a trench insulating layer. The bottom of the trench insulating layer is etched back to form a footing portion at the corner of the via. The footing portion has a height less than a total height of the first and second insulating layers.

Abstract: A memory device comprising a plurality of tunnel junctions (TJs) includes a bottom wiring layer; a top wiring layer; a plurality of TJs contacting the bottom wiring layer and the top wiring layer; and a plurality of tunnel junction vias (TJVs) contacting the bottom wiring layer and the top wiring layer, wherein the plurality of TJVs each have a lower resistance the each of the plurality of TJs, wherein the plurality of TJVs comprise at least one concave surface, and wherein the at least one concave surface of the plurality of TJVs is configured to trap etched material during formation of the TJVs so as to reduce the resistance of the plurality of TJVs.

Abstract: A chip package includes: a substrate; a plurality of conductive connections in contact with the silicon carrier; a silicon carrier in a prefabricated shape disposed above the substrate, the silicon carrier including: a plurality of through silicon vias for providing interconnections through the silicon carrier to the chip; liquid microchannels for cooling; a liquid coolant flowing through the microchannels; and an interconnect to one or more chips or chip stacks.

Abstract: A semiconductor device includes an embedding layer in which one or more semiconductor element(s) is embedded and one or more interconnect layers as well as one or more insulation layers on one or both sides of the embedding layer. The embedding layer includes a woven cloth formed by reinforcement fibers. The woven cloth has an opening on its site embedding the semiconductor element. The opening is arranged so that direction of the reinforcement fibers will have a preset angle with respect to a direction of a side of or a tangent to at least a portion of the opening, the preset angle being other than a square angle or a zero angle (parallelism).

Abstract: A surface mount semiconductor device has a semiconductor die encapsulated in a molding compound. Electrical contact elements of an intermediate set are disposed on the molding compound. A set of coated wires electrically connect bonding pads of the semiconductor die and the electrical contact elements of the intermediate set. A layer of insulating material covers the coated wires, the die and the electrical contact elements of the intermediate set. Electrically conductive elements are exposed at an external surface of the layer of insulating material and contact respective electrical contact elements of the intermediate set through the layer of insulating material.

Abstract: A method for forming a sensor stack is presented. The method includes providing a substrate having a first side and a second side. Furthermore, the method includes disposing an integrated circuit having a first side and a second side on the first side of the substrate, where the integrated circuit comprises a first plurality of contact pads disposed on the first side of the integrated circuit. The method also includes providing a sensor array having a plurality of sensor elements, wherein each of the sensor elements has a first side and a second side, and wherein the sensor array comprises a second plurality of contact pads disposed on the second side of the sensor array.

Abstract: A semiconductor chip capable of realizing reduction in cost when the semiconductor chip is mounted over a package substrate, miniaturization of the package substrate, and optimization of an interconnect pattern. The semiconductor chip includes a first electrode pad group provided in the semiconductor chip, and comprised of at least one electrode pad, and a second electrode pad group provided in the semiconductor chip, and comprised of at least one other electrode pad capable of outputting a signal identical to a signal outputted by the one electrode pad. Further, either the one electrode pad of the first electrode pad group, or the one other electrode pad of the second electrode pad group, closer in distance to one other electrode pad of one other semiconductor chip is coupled to the one other electrode pad of the one other semiconductor chip.

Abstract: There is provided a semiconductor device which includes a primary semiconductor chip 11, a secondary semiconductor chip 12 stacked on the primary semiconductor chip 11, primary external connecting terminals 16 which are electrically connected with the primary semiconductor chip 11 via wires 21, secondary external connecting terminals 17 which are electrically connected with the secondary semiconductor chip 12 via wires 22 and primary and secondary low-elasticity resins 13, 15 which seal the primary and secondary semiconductor chips 11, 12 in such a manner as to cover them.

Abstract: A stacked microelectronic assembly includes a first stacked subassembly and a second stacked subassembly overlying a portion of the first stacked subassembly. Each stacked subassembly includes at least a respective first microelectronic element having a face and a respective second microelectronic element having a face overlying and parallel to a face of the first microelectronic element. Each of the first and second microelectronic elements has edges extending away from the respective face. A plurality of traces at the respective face extend about at least one respective edge. Each of the first and second stacked subassemblies includes contacts connected to at least some of the plurality of traces. Bond wires conductively connect the contacts of the first stacked subassembly with the contacts of the second stacked subassembly.

Abstract: The semiconductor device has the CSP structure, and includes: a plurality of electrode pads formed on a semiconductor integrated circuit in order to input/output signals from/to exterior; solder bumps for making external lead electrodes; and rewiring. The solder bumps are arranged in two rows along the periphery of the semiconductor device. The electrode pads are arranged inside the outermost solder bumps so as to be interposed between the two rows of solder bumps. Each trace of the rewiring is extended from an electrode pad, and is connected to any one of the outermost solder bumps or any one of the inner solder bumps.

Abstract: The invention provides a radiation curable ink jet ink composition including: a monomer equal to or more than 20% by mass and equal to or less than 50% by mass with respect to the total mass of the ink composition, which is represented by the following formula (I); and N-vinylcaprolactam equal to or more than 5% by mass and equal to or less than 15% by mass with respect to the total mass of the ink composition: CH2?CR1—COOR2—O—CH?CH—R3??(I) wherein, R1 is a hydrogen atom or a methyl group, R2 is a divalent organic residue having 2 to 20 carbon atoms, and R3 is a hydrogen atom or monovalent organic residue having 1 to 11 carbon atoms.

Abstract: A radiation-curable ink jet ink composition contains a polymerizable compound, an photopolymerization initiator and polysiloxane, in which the ink composition is used for recording on a package substrate as a recording medium; the polymerizable compound contains one or more kinds of compound having a pentaerythritol skeleton; an HLB value of the polysiloxane is 5 to 12; and the polysiloxane content is 0.1 to 2% by mass with respect to the total amount of the ink composition.

Abstract: To provide a photosensitive adhesive which is sufficiently excellent in terms of all the properties of attachment, pattern formability, thermocompression bondability and high-temperature adhesion, and which has thermocompression bondability for adherends after patterning by exposure and development, and is capable of alkali development, as well as a film adhesive, an adhesive sheet, an adhesive pattern, a semiconductor wafer with an adhesive layer and a semiconductor device, which employ the same. A photosensitive adhesive comprising (A) an imide group-containing resin with a fluoroalkyl group, (B) a radiation-polymerizable compound, (C) a photoinitiator and (D) a thermosetting component.

Abstract: A high-speed centrifugal atomization mixing net for an exhaust outlet pipe, including a spray pipe, a shaft sleeve, an induced air blade, and an atomization net. The spray pipe is capable of rotating. The shaft sleeve is fixedly disposed on the spray pipe. The induced air blade is disposed on the front of the shaft sleeve. The atomization net is disposed at the back of the shaft sleeve. A spray hole opposite to the shaft sleeve is disposed on a side wall of the spray pipe. Multiple inclined spray grooves are disposed on side wall of the shaft sleeve. An end of the induced air blade is bent. The bending direction of the induced air blade is the same as an inclination direction of the induced air blade. The bent part of the induced air blade is connected to an outer edge of the atomization net whereby forming a stop plate.

Abstract: A condensing system is provided. The condensing system may include baffle plate units having a substantially flat surface and openings configured for cooling fluid to flow through; and baffles attached to the baffle plate unit, the baffles oriented at an acute angle with respect to the baffle plate unit, the baffles having a flat surface and figured to diffuse a cooling fluid into a thin, turbulent film at a similar acute angle. A method of condensing a fluid is provided. The method includes defining a path for the fluid to be condensed to flow; spraying a cooling fluid against a baffle thereby creating a turbulent film of cooling fluid in the path for the fluid to be condensed and orienting some of the baffles to create a film of cooling fluid oriented in one direction and orienting other baffles to create a film of cooling fluid in a second direction wherein the path of the fluid to be condensed causes the fluid to be condensed to flow over films oriented in both the first and second directions.