Abstract: The present invention relates to novel compositions comprising light emitting materials and/or charge transporting materials and one or more organic solvents having a viscosity at 25° C. of at least 10 mPas and a boiling point of at most 400° C., to their use as inks for the preparation of organic light emitting diode (OLED) devices, to methods for preparing OLED devices using the novel formulations, and to OLED devices prepared from such methods and formulations.

Abstract: An organic-inorganic composite of the present invention includes metal oxide particles and an organic polymer compound including a monomer containing organic ligands and a vinyl-based monomer having organic ligands which are bonded to a polymer chain through covalent bonds and the organic polymer compound is bonded to the metal oxide particles by the organic ligands forming a complex with metal atoms on the surface of the metal oxide particles. According to the organic-inorganic composite, the metal oxide particles and the organic polymer compound containing the organic ligands can be chemically bonded, therefore, light emission characteristics such as light emission intensity or stabilization of light emission wavelength can be improved, and transparency and mechanical characteristics such as thermal stability or hardness can also be improved.

Abstract: A process for producing synthesis gas, or syngas, from biomass. The process comprises contacting biomass with oxygen, or oxygen and steam, in an amount effective to oxidize the biomass and to heat the biomass to a temperature to no greater than 750° C. At least one combustible material also is contacted with oxygen and steam to heat the at least one combustible material to a temperature of at least 1,100° C., to provide a hot gas derived from the oxidized combustible material. The latter maybe residual products derived from the process itself as char, tar, or hydrocarbons. The oxidized biomass then is contacted with the hot flue gas to heat the biomass to a temperature of at least 900° C., thereby producing synthesis gas. The synthesis gas then is recovered. Such process provides a method of providing heat for producing synthesis gas without consuming a portion of the synthesis gas to provide such heat, thereby providing an increased yield of synthesis gas.

Abstract: A cost-effective solution for the disposal of solvent deasphalting process bottoms that include spent solid adsorbent material containing ash-producing constituents, asphalt and process reject materials is provided by introducing them in the form of a flowable slurry into a membrane wall gasification reactor to produce a synthesis gas and, optionally, subjecting the synthesis gas to a water-gas shift reaction to produce a more hydrogen-rich product stream; process steam and electricity are produced by recovering the sensible heat values from the hot synthesis gas.

Abstract: A method for producing synthesis gas, including: 1) pre-treating a biomass raw material; 2) carrying out low-temperature carbonization to obtain pyrolysis gas and charcoal, cooling the charcoal at an outlet of an carbonization furnace, and conveying the cooled charcoal to a charcoal storage bin; 3) separating the pyrolysis gas from charcoal powder; 4) delivering part of a separated pyrolysis gas to a combustion bed for combustion, heating the other part of the separated pyrolysis gas, and delivering a heated pyrolysis gas to the carbonization furnace; delivering a waste hot flue gas after heat exchange to a pretreatment part for the biomass raw material for drying; conveying the separated charcoal powder to the charcoal storage bin; 5) milling the charcoal powder to prepare a charcoal slurry; and 6) using high-pressure charcoal slurry pump, introducing the charcoal slurry to a gasification furnace for gasification.

Abstract: The present disclosure describes simulants and methods of production thereof that imitate characteristics of known explosives, including characteristics at the microscopic and macroscopic level. For instance, the present disclosure includes a simulant with the same texture, granularity, bulk density, particle density, and porosity of a known explosive. The simulants described herein provide the macroscopic bulk physical properties and the microscopic scale properties of actual explosives.

Abstract: The present invention relates to novel compositions comprising an organic semiconductor (OSC) and one or more organic solvents. The composition is solid at a temperature of 25° C. and fluid at a higher temperature and the boiling point of the solvent is at most 400° C. Furthermore, the present invention describes the use of these compositions as inks for the preparation of organic electronic (OE) devices, especially organic photovoltaic (OPV) cells and OLED devices, to methods for preparing OE devices using the novel compositions, and to OE devices, OLED devices and OPV cells prepared from such methods and compositions.

Abstract: The present invention relates to a compound according to formula (I), to the use thereof in an electronic device and to an electronic device which comprises one or more compounds according to formula (I).

Abstract: The present invention relates to a conductive particle, a conductive adhesive with the conductive particles, a LCD panel with the conductive adhesive, a method of manufacturing of the conductive particle and a method of manufacturing of the conductive adhesive. The conductive particle comprising an outer coating layer of graphite and an inner core of an organic resin enclosed by the outer coating layer, and therefore the conductive particles can have good conductivity as well as good strength and elasticity.

Abstract: The invention relates to an electrode that can be formed by firing in air a conductive paste comprising a copper powder, a boron powder, an additional inorganic powder, a glass frit, and an organic medium, wherein the additional inorganic powder is zirconia powder.

Abstract: The present invention provides a conductive composition which comprises a conductive functional phase mixture. The conductive functional phase mixture is made of a metal and a metal oxide, wherein the metal oxide is as the filler and the metal is as the main body. A coating portion covers substantially at least a partial surface of the filler, wherein the coating portion includes at least silver or copper.

Abstract: A carbazole derivative represented by the following General Formula (1) where at least one aromatic ring has one to three substituents each represented by the following General Formula (2): in General Formula (1), Ar1 and Ar2 each independently represent a substituted or unsubstituted aryl group which may form a ring with a benzene ring, a substituted or unsubstituted heterocyclic group, a substituted or unsubstituted arylsilyl group, or a hydrogen atom, and Ar3 represents a substituted or unsubstituted aryl group, —X—Y—Z??(2) in General Formula (2), X represents a methylene group, a carbonyloxy group, an oxycarbonyl group, a carbonyl group, an oxygen atom or a sulfur atom, Y represents a substituted or unsubstituted alkylene group, and Z represents a carboxyl group, a hydroxyl group or a thiol group.

Abstract: Doped and partially-reduced oxide (e.g., SrTiO3-based) thermoelectric materials. The thermoelectric materials can be single-doped or multi-doped (e.g., co-doped) and display a thermoelectric figure of merit (ZT) of 0.2 or higher at 1050K. Methods of forming the thermoelectric materials involve combining and reacting suitable raw materials and heating them in a graphite environment to at least partially reduce the resulting oxide. Optionally, a reducing agent such as titanium carbide can be incorporated into the starting materials prior to the reducing step in graphite. The reaction product can be sintered to form a dense thermoelectric material.

Abstract: The present invention relates to a photochromic ink, the process for its preparation which is based on a spiropyran powder obtainable by melting, cooling and crushing, and to a new form of a spiropyran obtainable thereby. Said process to prepare a photochromic ink comprises the steps of a) heating and melting the spiropyran at a temperature below 250° C., b) cooling the melt to obtain a solidified spiropyran, c) crushing the solidified spiropyran to obtain a powder, d) optionally adding the powder to a binder providing the basis for the photochromic ink.

Abstract: An apparatus and methods for pushing conductors into conduit and other structures are disclosed. The apparatus (“pusher”) can include rollers to apply a pushing force to one or more conductors or bundles of conductors. One or more rollers can be coupled to a drive mechanism. The pusher is configured to pull conductors or bundles of conductors off of one or more spools, and push the conductors or bundles of conductors without de-bundling or sorting the conductors. The conductors can be fed through the pusher in any format including side-by-side, vertical on top of one another, twisted together, or other formats. The pusher can include a guiding device that is configured to route the conductors from the pusher to a conduit through which the conductors are being pushed or pulled.

Abstract: A manual fork truck using a tightening device is disclosed. The tightening device applied to a manual fork truck, comprises a tightening rod; a fixing portion on one end of the tightening rod; and a plurality of tightening assemblies separately assembled to the tightening rod axially; each of the plurality of tightening assemblies comprising at least one tightening arm on the tightening rod, and a tightening belt having one end connected to the at least one tightening arm.

Abstract: A warm-up pilot pressure control unit adjusts pilot pressure inputted to a first flow channel open/close unit so that the flow channel open/close unit is switched to an open state when a warm-up start state is entered under the necessary condition that a first winch operation member is in a neutral position. When the first flow channel open/close unit is in the open state, a first pump displacement adjustment unit adjusts the displacement of a first hydraulic pump so that the differential pressure between a first pump hydraulic circuit and a first warm-up hydraulic circuit becomes constant at a predetermined set pressure.

Abstract: A snake deterrent system that offers a physical barrier and an electric current to deter snakes from navigating over the barrier. The units are easily assembled together by use of a hinge system and easily installed with legs that go into the ground. The fencing system can be attached to most electric fence controllers that are used for livestock, pets, or wildlife. Offering a measure of safety to deter venomous snakes from posing a threat to people, children, pets, and livestock.

Abstract: A fencing/railing assembly adapted to be positioned between a pair of posts and mounted thereto. The assembly includes a plurality of pickets, a plurality of rails extending transverse to the pickets, and one or more pivoting, sliding connectors for connecting a picket to a rail, with the sliding, pivotal connection concealed by the rail. The connector is slidably mounted to the rail and is pivotally connected to the picket. The sliding, pivotal connection allows the pickets to be oriented at greater angles relative to the rails (i.e. it allows the assembly to rack to a greater degree, thereby allowing the fencing/raining to following more-steeply changing terrain or contours). In one embodiment, an elongated connector strip is concealed by the rail and spans multiple pickets. In another embodiment, the assembly includes a plurality of shorter connectors, one for each picket/rail connection.

Abstract: A memristor with a controlled electrode grain size includes an adhesion layer, a first electrode having a first surface contacting the adhesion layer and a second surface opposite the first surface, in which the first electrode is formed of an alloy of a base material and at least one second material, and in which the alloy has a relatively smaller grain size than a grain size of the base material. The memristor also includes a switching layer positioned adjacent to the second surface of the first electrode and a second electrode positioned adjacent to the switching layer.

Abstract: A switching device that provides bipolar current paths and a resistance change memory device using the switching device. The switching device includes a first electrode, a second electrode, and an amorphous carbon layer interposed between the first electrode and the second electrode and configured to control a bipolar current to flow therethrough in response to a voltage applied between the first electrode and the second electrode.

Abstract: An example embodiment is a phase change memory cell that includes a bottom contact and an electrically insulating layer disposed over the bottom contact. The electrically insulating layer defines an elongated via. Furthermore, a bottom electrode is disposed at least partially in the via. The bottom electrode includes a sleeve of a first electrically conductive material surrounding a rod of a second electrically conductive material. The first electrically conductive material and the second electrically conductive material have different specific electrical resistances. The memory cell also includes a phase change layer electrically coupled to the first electrode.

Abstract: A method for fabricating a resistance variable memory device, includes: providing a substrate having first contacts and second contacts, where the second contacts do not overlap the first contacts; forming a line pattern over the substrate, the line pattern overlapping a first line and including a stacked structure of a first electrode, a resistor, and a second electrode; forming a first contact hole to expose the second contact; forming an insulating spacer on a sidewall of the first contact hole; forming a third contact to fill the first contact hole having the insulating spacer formed therein; and forming a third electrode over the third contact such that the third electrode overlaps a second line extending in a second direction and is cut open over the first contact, where the first and second contacts are alternately arranged on the second line.

Abstract: A current-limiting layer and a current-reducing layer are incorporated into a resistive switching memory device to form memory arrays. The incorporated current-limiting layer reduces the occurrence of current spikes during the programming of the resistive switching memory device and the incorporated current-reducing layer minimizes the overall current levels that can flow through the resistive switching memory device. Together, the two incorporated layers help improve device performance and lifetime.

Abstract: Provided are semiconductor devices and methods of fabricating the same. The device may include lower interconnection lines, upper interconnection lines crossing the lower interconnection lines, selection elements disposed at intersections, respectively, of the lower and upper interconnection lines, and memory elements interposed between the selection elements and the upper interconnection lines, respectively. Each of the selection elements may be realized using a semiconductor pattern having a first sidewall, in which a first lower width is smaller than a first upper width, and a second sidewall, in which a second lower width is greater than a second upper width, the first and second sidewalls crossing each other.

Abstract: A nanoscale switching device is provided. The device comprises: a first electrode of a nanoscale width; a second electrode of a nanoscale width; an active region disposed between the first and second electrodes, the active region having a non-conducting portion comprising an electronically semiconducting or nominally insulating and a weak ionic conductor switching material capable of carrying a species of dopants and transporting the dopants under an electric field and a source portion that acts as a source or sink for the dopants; and an oxide layer either formed on the first electrode, between the first electrode and the active region or formed on the second electrode, between the second electrode and the active region. A crossbar array comprising a plurality of the nanoscale switching devices is also provided. A process for making at least one nanoscale switching device is further provided.

Abstract: In one or more embodiments described herein, there is provided an apparatus including a first layer for detecting electromagnetic signalling, and a second layer positioned proximate to the first layer. The first layer includes graphene, and the second layer is configured to undergo plasmonic resonance in response to receiving electromagnetic signalling. This plasmonic resonance that the second layer undergoes thereby sensitizes the graphene of the first layer to detection of particular spectral characteristics of received electromagnetic signalling corresponding to the particular plasmonic resonance of the second layer.

Abstract: A photodetector includes: a substrate; a first dielectric material positioned on the substrate; an optical waveguide positioned on the first dielectric material; a second dielectric material positioned on the optical waveguide; a graphene layer positioned on the second dielectric material; and a first electrode and a second electrode that are positioned on the graphene layer.

Abstract: A silicon nanowire including metal nanoclusters formed on a surface thereof at a high density. The metal nanocluster improves electrical and optical characteristics of the silicon nanowire, and thus can be usefully used in various electrical devices such as a lithium battery, a solar cell, a bio sensor, a memory device, or the like.

Abstract: A method and semiconductor device for synthesizing graphene using ion implantation of carbon. Carbon is implanted in a metal using ion implantation. After the carbon is distributed in the metal, the metal is annealed and cooled in order to precipitate the carbon from the metal to form a layer of graphene on the surface of the metal. The metal/graphene surface is then transferred to a dielectric layer in such a manner that the graphene layer is placed on top of the dielectric layer. The metal layer is then removed. Alternatively, recessed regions are patterned and etched in a dielectric layer located on a substrate. Metal is later formed in these recessed regions. Carbon is then implanted into the metal using ion implantation. The metal may then be annealed and cooled in order to precipitate the carbon from the metal to form a layer of graphene on the metal's surface.

Abstract: An optoelectronic device and method for fabricating optoelectronic device, comprising: forming a quantum dot layer on a substrate including at least one electronically conductive layer, including a plurality of quantum dots which have organic capping layers; and removing organic capping layers from the quantum dots of the quantum dot layer by physically treating the quantum dot layer, the physical treatment including both thermal treatment and plasma processing.

Abstract: A semiconductor light emitting device and a fabrication method thereof are provided. The semiconductor light emitting device includes: first and second conductivity-type semiconductor layers; and an active layer disposed between the first and second conductivity-type semiconductor layers and having a structure in which a quantum barrier layer and a quantum well layer are alternately disposed, and the quantum barrier layer includes first and second regions disposed in order of proximity to the first conductivity-type semiconductor layer.

Abstract: The invention is directed to a surface emitting semiconductor light-emitting diode (LED) in which a reflector layer (4) of the first conductivity type is provided between a substrate (2) and a first barrier layer (5). A first contact layer (9) has at least one emitting surface (13) via which radiation emitted by an active layer (6) exits the LED. The emitting surfaces (13) are electrically and optically isolated from one another by surface implanted regions (11) in the first contact layer (9) which are irradiated with electric charge carriers. The areas of the layers located below the emitting surface (13) starting from the first contact layer (9) and proceeding as far as at least through the active layer (6) are electrically and optically isolated with respect to areas of the layers not located below the emitting surface (13) by means of first deep implanted regions (12.1) irradiated with electric charge carriers.

Abstract: A light emitting diode (LED) die includes a first-type semiconductor layer, a multiple quantum well (MQW) layer and a second-type semiconductor layer. The light emitting diode (LED) die also includes a peripheral electrode on the first-type semiconductor layer located proximate to an outer periphery of the first-type semiconductor layer configured to spread current across the first-type semiconductor layer. A method for fabricating the light emitting diode (LED) die includes the step of forming an electrode on the outer periphery of the first-type semiconductor layer at least partially enclosing and spaced from the multiple quantum well (MQW) layer configured to spread current across the first-type semiconductor layer.

Abstract: A substrate includes a first source region and a first drain region each having a first semiconductor layer disposed on a second semiconductor layer and a surface parallel to {110} crystalline planes and opposing sidewall surfaces parallel to the {110} crystalline planes; nanowire channel members suspended by the first source region and the first drain region, where the nanowire channel members include the first semiconductor layer, and opposing sidewall surfaces parallel to {100} crystalline planes and opposing faces parallel to the {110} crystalline planes. The substrate further includes a second source and drain regions having the characteristics of the first source and drain regions, and a single channel member suspended by the second source region and the second drain region and having the same characteristics as the nanowire channel members. A width of the single channel member is at least several times a width of a single nanowire member.

Abstract: Disclosed is a semiconductor device. More specifically, disclosed are a nitride-based heterojunction semiconductor device and a method for producing the same. The nitride-based heterojunction semiconductor device includes a nitride semiconductor buffer layer, a barrier layer disposed on the buffer layer, a cap layer discontinuously disposed on the barrier layer, a source electrode and a drain electrode that contact at least one of the barrier layer and the cap layer, and a gate electrode that Schottky-contacts at least one of the barrier layer and the cap layer and is disposed between the source electrode and the drain electrode.

Abstract: A substrate includes a first source region and a first drain region each having a first semiconductor layer disposed on a second semiconductor layer and a surface parallel to {110} crystalline planes and opposing sidewall surfaces parallel to the {110} crystalline planes; nanowire channel members suspended by the first source region and the first drain region, where the nanowire channel members include the first semiconductor layer, and opposing sidewall surfaces parallel to {100} crystalline planes and opposing faces parallel to the {110} crystalline planes. The substrate further includes a second source and drain regions having the characteristics of the first source and drain regions, and a single channel member suspended by the second source region and the second drain region and having the same characteristics as the nanowire channel members. A width of the single channel member is at least several times a width of a single nanowire member.

Abstract: Novel phosphorescent heteroleptic iridium complexes with phenylpyridine and dibenzo-containing ligands are provided. Alkyl substitution at specific positions on the ligands gives rise to compounds with improved OLED properties, including saturated green emission.

Abstract: Compositions and methods for controlled polymerization and/or oligomerization of silane (and optionally cyclosilane) compounds, including those of the general formulae SinH2n and SinH2n+2, as well as halosilanes and arylsilanes, to produce soluble polysilanes, polygermanes and/or polysilagermanes having low levels of carbon and metal contaminants, high molecular weights, low volatility, high purity, high solubility and/or high viscosity. The polysilanes, polygermanes and/or polysilagermanes are useful as a precursor to silicon- and/or germanium-containing conductor, semiconductor and dielectric films.

Abstract: According to example embodiments, a photodiode includes a photoelectric layer on a first electrode, a second electrode on the photoelectric layer, and a first phosphorescence layer on the second electrode.

Abstract: The present disclosure relates to a hybrid organic-inorganic thin film producing method including an interlayer connection between an inorganic cross-linked layer and an organic polymer through a molecular layer deposition (MLD) method, a hybrid organic-inorganic thin film produced by the producing method, and an organic electronic device and a thin film transistor containing the hybrid organic-inorganic thin film.

Abstract: An organic light emitting diode display, which includes: a first electrode; a second electrode facing the first electrode; and an emission layer interposed between the first electrode and the second electrode. Herein the first electrode includes: a first layer including a material having a work function of about 4.0 eV or less and an electron injection material; and a second layer including a material having a resistivity of about 10 ??cm or less. The first layer is disposed between the second layer and the emission layer.

Abstract: A polymer blend including a first polymer having a unit represented by Formula 1 and a second polymer having a unit represented by Formula 2: wherein in Formulae 1 and 2, R1 through R13, l, and m are the same as defined in the detailed description.

Abstract: To provide a composition (e.g., a coating composition) useful for forming an organic semiconductor having excellent conductivity, solvent resistance, heat resistance, durability, and other properties, and an organic semiconductor formed with the composition. The composition comprises an aromatic polycarbonyl compound having a carbonyl group as a reactive site, and at least one aromatic reactive component selected from an aromatic polyamine having an amino group as a reactive site, and an aromatic heterocyclic compound having a plurality of unmodified ?-carbon positions, as reactive sites, each of which is adjacent to a hetero atom of a heterocycl thereof. When the aromatic reactive component is an aromatic heterocyclic compound, the aromatic polycarbonyl compound is an aromatic polyaldehyde compound.

Abstract: A photoelectric conversion device that contains a polymer compound having a structural unit represented by formula (1) has high photoelectric conversion efficiency. (wherein, X1 and X2 are the same or different and represent a nitrogen atom or ?CH—. Y1 represents a sulfur atom, an oxygen atom, a selenium atom, —N(R1)— or —CR2?CR3—. R1, R2 and R3 are the same or different and represent a hydrogen atom or a substituent. W1 represents a cyano group, a monovalent organic group having a fluorine atom or a halogen atom. W2 represents a cyano group, a monovalent organic group having a fluorine atom, a halogen atom or a hydrogen atom.

Abstract: Disclosed is a light-emitting element having a light-emitting layer which includes a first layer, a second layer, and a third layer provided in this order on an anode side between the anode and a cathode. The first layer has a hole-transporting property, the second layer has a bipolar property, and the third layer has an electron-transporting property, wherein the first layer contains a first fluorescent compound and a hole-transporting organic compound, the second layer contains a phosphorescent compound and a host material, and the third layer contains a second fluorescent compound and an electron-transporting organic compound. The light-emitting layer is also arranged so that the triplet-excitation energy of both the hole-transporting organic compound and the electron-transporting organic compound are greater than that of the host material.

Abstract: The present invention provides an organic LED element having the significantly larger light emission area than conventional ones. The invention relates to an organic LED element, comprising: a transparent substrate; a light scattering layer; a transparent first electrode; an organic light-emitting layer; and a second electrode formed in this order, wherein the light scattering layer has a base material comprising a glass, and a plurality of scattering materials dispersed in the base material; the light scattering layer has side surfaces, and each of the side surfaces has a surface tilted at an angle larger than right angle from an upper surface on the first electrode side toward a bottom surface on the transparent substrate side; and the first electrode is placed so as to continuously cover the side surfaces.

Abstract: A method for manufacturing a thin film transistor includes the step of forming a gate electrode (11aa) on an insulating substrate, the step of forming a gate insulating layer (12) to cover the gate electrode (11aa), and thereafter, forming an oxide semiconductor layer (13a) on the gate insulating layer (12), the step of forming a source electrode (16aa) and a drain electrode (16b) on the oxide semiconductor layer (13a) by dry etching, with a channel region (C) of the oxide semiconductor layer being exposed, and the step of supplying oxygen radicals to a channel region of the oxide semiconductor layer.

Abstract: The present invention is an electronic device comprising a first substrate, a second substrate arranged opposite the first substrate, a sealed portion arranged between the first substrate and the second substrate, and a sealing portion that connects the first and the second substrate and is provided around the sealed portion, wherein at least a portion of the sealing portion following along the periphery of the sealed portion has outer resin sealing portions respectively fixed to the first substrate and the second substrate and an intermediate resin sealing portion arranged so as to be interposed by the outer resin sealing portions between the first substrate and the second substrate, the outer resin sealing portions and the intermediate resin sealing portion contain resin, and a melt flow rate or melting point of the intermediate resin sealing portion differs from a melt flow rate or melting point of the outer resin sealing portions.

Abstract: A test pattern for measuring semiconductor alloys using X-ray diffraction (XRD) includes a first region to an Nth region defined on a wafer, and a plurality of test structures positioned in the first region and so forth up to in the Nth region. The test structures in the same region have sizes identical to each other and the test structures in different regions have sizes different from each other.