Abstract: Because a mirror electron imaging type inspection apparatus for obtaining an inspection object image with mirror electrons has been difficult to optimize inspection conditions, since the image forming principles of the apparatus are different from those of conventional SEM type inspection apparatuses. In order to solve the above conventional problem, the present invention has made it possible for the user to examine such conditions as inspection speed, inspection sensitivity, etc. intuitively by displaying the relationship among the values of inspection speed S, inspection object digital signal image pixel size D, inspection object image size L, and image signal acquisition cycle P with use of a time delay integration method as a graph on an operation screen. The user can thus determine a set of values of a pixel size, an inspection image width, and a TDI sensor operation cycle easily with reference to the displayed graph.

Abstract: A device and method for analyzing a sample provide for extracting a part to be analyzed from the sample with the aid of a previously generated opening in the sample. The part to be analyzed is examined in greater detail with the aid of a particle beam. For this purpose, the sample is placed in the opening or on a sample holder.

Abstract: A method is provided that includes the steps of i) providing a specimen in the form of a wafer having a measurement area and a reference area, assumed to be without deformations and coplanar with the measurement area; ii) illuminating one face of the specimen with an electron beam (Fin); iii) superposing a beam (F1B) of radiation diffracted by the measurement area (B) with a beam (F1A) of the radiation diffracted by the reference so as to cause these two beams to interfere; iv) measuring the spatial periodicity and the orientation of the fringes of the interference pattern (FI); and v) deducing from this a difference in the lattice parameter and/or the orientation between the reference and measurement areas, which is indicative of a state of deformation of the latter at the nanoscale. A device and system for implementing the method is also provided.

Abstract: A system for controlling a tool-to-tool disparity between a plurality of scanning electron microscopes includes a measuring unit for measuring a tool-to-tool disparity between plural scanning electron microscopes based on information extracted from secondary electron images which are captured by imaging a reference pattern, a tool state monitoring unit for monitoring tool states of each of the plural scanning electron microscopes, and an output unit for displaying on a screen a relationship between the tool-to-tool disparity between the plural scanning electron microscopes and tool states of each of the plural scanning electron microscopes monitored by the tool state monitoring unit. The tool state monitoring unit monitors the tool states of each of the plural scanning electron microscopes while imaging the reference pattern by using each of the plural scanning electron microscopes.

Abstract: The invention provides a system for achieving detection and measurement of film thickness reduction of a resist pattern with high throughput which can be applied to part of in-line process management. By taking into consideration the fact that film thickness reduction of the resist pattern leads to some surface roughness of the upper surface of the resist, a film thickness reduction index value is calculated by quantifying the degree of roughness of the part corresponding to the upper surface of the resist on an electron microscope image of the resist pattern which has been used in the conventional line width measurement. The amount of film thickness reduction of the resist pattern is estimated by applying the calculated index value to a database previously made for relating a film thickness reduction index value to an amount of film thickness reduction of the resist pattern.

Abstract: One embodiment relates to a method of classifying a defect on a substrate surface. The method includes scanning a primary electron beam over a target region of the substrate surface causing secondary electrons to be emitted therefrom, wherein the target region includes the defect. The secondary electrons are detected from the target region using a plurality of at least two off-axis sensors so as to generate a plurality of image frames of the target region, each image frame of the target region including data from a different off-axis sensor. The plurality of image data frames are processed to generate a surface height map of the target region, and surface height attributes are determined for the defect. The surface height attributes for the defect are input into a defect classifier. Other embodiments, aspects and features are also disclosed.

Abstract: A microbolometer is disclosed, including a bottom dielectric of a bridge structure; a detector layer disposed above the bottom dielectric, the detector layer comprised of a metal-doped vanadium pentaoxide material; and a top dielectric disposed above the detector layer.

Abstract: This disclosure concerns a system with scattering analysis including a handling system that presents a single particle to at least one quantum cascade laser (QCL) source. The QCL laser source is configured to deliver light to the single particle in order to induce resonant mid-infrared absorption in the particle or an analyte within the particle. A mid-infrared detection facility detects the mid-infrared wavelength light scattered by the single particle, wherein a wavelength and angle analysis of the scattered mid-IR wavelength light is used to determine analyte-specific structural and concentration information.

Abstract: A thermal detector includes: a substrate; a support member supported so that a cavity is formed between the substrate and the support member; a heat-detecting element supported on the support member; a thermal transfer member disposed over the heat-detecting element, and including a thermal collecting portion made of a material having light-reflecting characteristics and having a pattern with which a portion of light incident to a region defined by the support member as seen in plan view enters towards the support member, and a connecting portion connecting the thermal collecting portion to the heat-detecting element; a first light-absorbing layer contacting the thermal transfer member between the thermal transfer member and the support member; and a second light-absorbing layer contacting the thermal transfer member and disposed on the thermal transfer member.

Abstract: A pyroelectric detector includes a substrate, a support member, a spacer member, and a pyroelectric detecting element. The spacer member supports the support member over the substrate with a cavity part being formed therebetween. The pyroelectric detecting element includes a first electrode mounted on the support member, a second electrode, and a pyroelectric body between the first and second electrodes. The first electrode includes a first region on which the pyroelectric body is layered, and a second region protruding from the first region in plan view. The support member includes an insulating layer, a first wiring layer disposed on the second surface side of the insulating layer, and a first plug passing through the insulating layer at a position where the first wiring layer and the second region of the first electrode overlap in plan view to connect the first wiring layer with the first electrode.

Abstract: Various embodiments of an optical proximity sensor having a lead frame and no overlying metal shield are disclosed. In one embodiment, a light emitter and a light detector are mounted on a lead frame comprising a plurality of discrete electrically conductive elements having upper and lower surfaces, at least some of the elements not being electrically connected to one another. An integrated circuit is die-attached to an underside of the lead frame. An optically-transmissive infrared pass compound is molded over the light detector and the light emitter and portions of the lead frame. Next, an optically non-transmissive infrared cut compound is molded over the optically-transmissive infrared pass compound to provide an optical proximity sensor having no metal shield but exhibiting very low crosstalk characteristics.

Abstract: An optical proximity sensor and corresponding methods of measuring crosstalk in the sensor are disclosed. The amount of crosstalk generated between the light emitter and the light detector of an optical proximity sensor is measured and quantified according to one of two methods. The measured crosstalk may then be stored in a register or memory location and then subtracted from signals representative of signals indicative of the nearby presence of an object to be detected combined with crosstalk, thereby removing so the contribution or effect of crosstalk on such signals.

Abstract: An imaging system, including (1) a CT scanner configured to scan an object arranged on a patient pallet; (2) a PET scanner, including a first detector portion, including first detector elements, arranged circumferentially around the patient pallet, the first detector portion having a predetermined axial extent and transaxially subtending less than 360 degrees with respect to a central axis of the scanner; and a second detector portion, including second detector elements, arranged separately from and opposing the first detector portion, wherein the second detector elements are of a different type than the first detector elements, and the second detector portion is configured to be movable radially and circumferentially around the object; and (3) an acquisition subsystem configured to acquire first event data from the first detector portion and to acquire second event data from the second detector portion.

Abstract: A radiation sensing device subdivided in N*M pixels, comprising: a conversion part to convert an impinging radiation into an electrical signal, a processing part having: for each pixel, at least two counters associated to different regions, so that a ratio of counters to pixels is at least equal to 2, an arbitration circuit which, for each pixel: receives detection information from the pixel and neighbouring pixels, taking into account detection information for the pixel and neighbouring pixels, allocates a detection value to an elected counter.

Abstract: A detector material for a detector is disclosed for use in CT systems, particularly in dual-energy CT systems, including a doped semiconductor. In at least one embodiment, the semiconductor is doped with a donator in a concentration, wherein the concentration of the donator corresponds to at least 50% of the maximum solubility thereof in the semiconductor material, and the donator produces flat imperfections having an excitation energy. The flat imperfections can be ionized and can provide additional freely moveable charge carriers. The freely moveable charge carriers can be captured by the spatially separated deep imperfections and thus reduce the number of the charged deep imperfections. In this way, pure time- and radiation-dependent effects, such as polarization, occur more often. The invention further more relates to the use of the detector material in a CT or dual-energy CT system for generating tomographic images of a test object.

Abstract: A neutron detector includes an exterior shell bounding an interior volume. The neutron detector includes at least a wall portion serving as a cathode. In one example the wall portion has microfeatures. The neutron detector includes a central structure located within the interior volume and serving as an anode. The neutron detector includes a boron coating on the wall portion. In on example, the boron coating is applied by an electrostatic spray process. In one example, the boron coating conforms to the microfeatures on the wall portion. In one example, the wall portion has a thickness of between 2 to 5 microns. The neutron detector includes an electrical connector operatively connected to the central structure for transmission of a signal collected by the central structure. An associated method provides for depositing the boron coating.

Abstract: A detection unit for detecting ionizing radiation including a crystal that interacts with incoming radiation; a processing module that analyzes the incoming radiation detected by the crystal; a positioning module that determines position of the detection unit; and a network interface module that receives and transmits time stamped radiation data and position information from/to a plurality of other detection units. The detection unit automatically identifies other detection units that are located close to form a cluster. The detection unit also includes radiation data integration logic that integrates the incoming radiation data from all detectors in cluster, the position of the detection unit, the received radiation data from other detection units and the received position information from other detection units in real time, and process it simultaneously, that allows significantly improve performance and reliability.

Abstract: Apparatuses and methods relating to generating an electric field are disclosed. An electric field generator may include a semiconductive material configured in a physical shape substantially different from a shape of an electric field to be generated thereby. The electric field is generated when a voltage drop exists across the semiconductive material. A method for generating an electric field may include applying a voltage to a shaped semiconductive material to generate a complex, substantially nonlinear electric field. The shape of the complex, substantially nonlinear electric field may be configured for directing charged particles to a desired location. Other apparatuses and methods are disclosed.

Abstract: A beam control assembly to shape a ribbon beam of ions for ion implantation includes a first bar, second bar, first coil of windings of electrical wire, second coil of windings of electrical wire, first electrical power supply, and second electrical power supply. The first coil is disposed on the first bar. The first coil is the only coil disposed on the first bar. The second bar is disposed opposite the first bar with a gap defined between the first and second bars. The ribbon beam travels between the gap. The second coil is disposed on the second bar. The second coil is the only coil disposed on the second bar. The first electrical power supply is connected to the first coil without being electrically connected to any other coil. The second electrical power supply is connected to the second coil without being electrically connected to any other coil.

Abstract: An ion source is disclosed for use in fabrication of semiconductors. The ion source includes an electron emitter that includes a cathode mounted external to the ionization chamber for use in fabrication of semiconductors. In accordance with an important aspect of the invention, the electron emitter is employed without a corresponding anode or electron optics. As such, the distance between the cathode and the ionization chamber can be shortened to enable the ion source to be operated in an arc discharge mode or generate a plasma. Alternatively, the ion source can be operated in a dual mode with a single electron emitter by selectively varying the distance between the cathode and the ionization chamber.

Abstract: An atmospheric pressure ionization apparatus includes a chamber, an ion inlet structure, an electrode, a sample emitter, and a gas passage. The ion inlet structure includes a sampling orifice. The electrode includes an electrode bore. An ionization region is defined between the ion inlet structure and the electrode. The flared structure is coaxially disposed about the ion inlet structure, and extends along an outward direction that includes a radial component relative to the sampling axis. The sample emitter is oriented at an angle to the sampling axis for directing a sample stream toward the ionization region. The gas passage directs a stream of gas from a gas source to the chamber. The flared structure and the wall cooperatively form an outward-directed portion of the gas passage that extends annularly about the sampling axis and along the outward direction. The gas flows through the outward-directed portion, around the flared structure, and toward the ionization region and the electrode bore.

Abstract: A valve unit configured for a charged particle beam device having a beam path 2 is described. The valve unit includes a vacuum sealed valve housing 102 configured for a pressure difference between the inside of the valve housing and the outside of the valve housing, wherein the housing provides a beam path portion 103 for having a charged particle beam pass therethrough along the beam path, a valve positioning unit adapted for selectively providing a first movement of the valve housing such that the beam path portion is selectively moved into and out of the beam path, and at least one sealing element 122 configured for a second movement, wherein the second movement is different from the first movement.

Abstract: Disclosed herein is an ultraviolet sterilizer having a watertight function. The ultraviolet sterilizer includes a housing and an ultraviolet sterilization unit. The housing has an inlet through which ballast water is drawn into the housing, and an outlet through which the ballast water is discharged from the housing after the ballast water has been sterilized. The ultraviolet sterilization unit is provided in the housing and includes an ultraviolet lamp applying ultraviolet rays to the ballast water to sterilize the ballast water. The ultraviolet sterilizer further includes a cap which supports each of the opposite ends of the ultraviolet sterilization unit and is watertightly coupled to the housing. Thus, even if the ultraviolet sterilization unit is damaged, ballast water is prevented from being drawn into a reception space which contains external devices, and explosive gas which may cause the ultraviolet sterilizer to explode is also prevented from entering the cap.

Abstract: An illumination detection system includes an excitation radiation source and associated radiation processing arrangement for focusing the excitation radiation from the radiation processing arrangement onto an analysis region of a sample. A radiation collection arrangement collects radiation from the analysis region of the sample resulting from the excitation, and a detector detects the collected radiation. The focused excitation radiation includes an excitation line which is evanescent in the sample. This combines the advantages of line scanning (reduced analysis time) and evanescent excitation (reduced background signal) and therewith enables increase measurement speed and precision for point of care application.

Abstract: The present invention provides a method for increasing the lifetime of an optical sensor. In one aspect, the method includes the step of configuring the optical sensor so that the duty cycle of sensor's radiant source is less than 100% over a continuous period amount of time when the sensor is periodically obtaining data regarding an analyte. By operating the sensor according to the above inventive method, the indicator molecules of the optical sensor are not excited during the entire continuous period of time during which the sensor is needed to provide data regarding the presence or concentration of a substance. Thus, the method increases the life of the indicator molecules.

Abstract: A handheld or portable detection system with a high degree of specificity and accuracy, capable of use at small and substantial standoff distances (e.g., greater than 12 inches) is utilized to identify specific substances and mixtures thereof in order to provide information to officials for identification purposes and assists in determinations related to the legality, hazardous nature and/or disposition decision of such substance(s). The system uses a synchronous detector and visible light filter to enhance detection capabilities.

Abstract: The invention relates to a device (1) for detecting the emission of a target particle (6) at an emission wavelength, said device comprising: a photo-detector (2, 2A, 2B) comprising a sensitive detection surface having a high optical index; wherein said target particle (6) can be positioned in the vicinity of said sensitive surface in an analysis medium (13) having a low optical index; said device being characterized in that it further comprises: a mask (3) covering said sensitive surface, said mask including at least one area (4) opaque at said emission wavelength and at least one hole (5), said hole being capable of receiving the target particle; and in that the mask includes at least one interface; 7 said device further comprising at least one groove (10, 10A, 10B) provided at said interface, each of said at least one groove surrounding each of said at least one hole.

Abstract: A patterned scintillator panel including an extruded scintillator layer comprising a thermoplastic polyolefin and a scintillator material, wherein the scintillator layer comprises a pattern. Also disclosed is a method of making a patterned scintillator panel including forming a scintillator layer by melt extrusion, the scintillator layer comprising thermoplastic particles comprising a thermoplastic polyolefin and a scintillator material; and patterning the scintillator layer. Further disclosed is a method of making a patterned scintillator panel including forming a scintillator layer by injection molding, the scintillator layer comprising thermoplastic particles comprising a thermoplastic polyolefin and a scintillator material; and patterning the scintillator layer.

Abstract: A pattern is formed on a mask substrate. Positional deviation information between an actual position of the pattern formed on the mask substrate and a design position decided at the time of designing the pattern is calculated. A heterogeneous layer of which a volume expands more greatly than that of surrounding mask substrate region is formed in a predetermined position within the mask substrate so that volume expansion of the heterogeneous layer according to the positional deviation information is achieved.

Abstract: A method and system for forming and using a fiducial on a sample to locate an area of interest on the sample, the method comprising forming a fiducial by depositing a block of material on a sample proximal to an area of interest on the sample, the block of material extending from the surface of the sample to a detectable extent above the surface of the sample; and milling, using a charged particle beam, a predetermined pattern into at least two exposed faces of the block of material; subsequent to forming the fiducial, detecting the location of the area of interest by detecting the location of the fiducial; and subsequent to detecting the location of the area of interest, imaging or milling the area of interest with a charged particle beam.

Abstract: The invention relates to a method of exposing a target by means of a plurality of beamlets. First, a plurality of beamlets is provided. The beamlets are arranged in an array. Furthermore, a target to be exposed is provided. Subsequently, relative movement in a first direction between the plurality of beamlets and the target is created. Finally, the plurality of beamlets is moved in a second direction, such that each beamlet exposes a plurality of scan lines on the target. The relative movement in the first direction and the movement of the plurality of beamlets in the second direction are such that the distance between adjacent scan lines exposed by the plurality of beamlets is smaller than a projection pitch Pproj,X in the first direction between beamlets of the plurality of beamlets in the array.

Abstract: A charged particle beam pattern forming apparatus, includes a charge amount distribution calculation unit configured to calculate a charge amount distribution charged by vertical incidence of a charged particle beam on a pattern forming region of a target object; a position correction unit configured to calculate, using the charge amount distribution charged, a corrected position of each pattern forming position corrected for a misregistration amount including a misregistration amount dependent on a deflection position where the charged particle beam is deflected, the misregistration amount caused by an amount of charge; and a pattern generator configured to form a pattern in the corrected position by using the charged particle beam.

Abstract: A charged particle multi-beamlet system for exposing a target (11) using a plurality of beamlets. The system comprises a charged particle source (1) for generating a charged particle beam (20), a beamlet aperture array (4D) for defining groups of beamlets (23) from the generated beam, a beamlet blanker array (6) comprising an array of blankers for controllably blanking the beamlets (23), a beam stop array (8) for blanking beamlets (23) deflected by the blankers, the beam stop array (8) comprising an array of apertures, each beam stop aperture corresponding to one or more of the blankers, and an array of projection lens systems (10) for projecting beamlets on to the surface of the target. The system images the source (1) onto a plane at the beam stop array (8), at the effective lens plane of the projection lens systems (10), or between the beam stop array (8) and the effective lens plane of the projection lens systems (10), and the system images the beamlet aperture array (4D) onto the target (11).

Abstract: The invention concerns an idea of planning irradiation of two target points (81, 9) with a beam approaching target points (72) for the purpose of depositing a first target dose distribution in a first of the two target volumes (81, 92) and a second target dose distribution in a second of the two target volumes (81, 92). The idea is characterized by the following steps: assigning target points (72) to one of the target volumes (81, 92), detecting an overlap of a first deposition caused by approaching a target point (72) assigned to the first target volume (81, 92) with a second deposition caused by approaching a target point (72) assigned to the second target volume (81, 92), and adapting the planning process for at least one of the target points (72) whose approach contributes to the overlap of the first and second deposition.

Abstract: An extreme ultraviolet light source apparatus, in which a target material is irradiated with a laser beam from a laser apparatus and the target material is turned into plasma, thereby emitting extreme ultraviolet light, may include a burst control unit configured to control irradiation of the target material is irradiated with the laser beam outputted successively in pulses from the laser apparatus when the extreme ultraviolet light is emitted successively in pulses. The target material is prevented from being turned into plasma by the laser beam while the laser beam is outputted successively in pulses from the laser apparatus when the successive pulsed emission is paused.

Abstract: A method, a product and an apparatus suited to transform radioactive waste by forming an amalgam of crushed hazardous radioactive waste, such as spent nuclear fuel rods, mixed with copious amounts of lead pellets, also granulated, to form a mixture in which lead granules overwhelm, and which is then further enclosed between solid lead slabs and compressed between rollers under high pressure to render the rolled end product a compacted amalgam radiation-free for integration into the environment.

Abstract: An apparatus and method for scanning a surface of an article moving along a travel path axis provide a compact sensor configuration. A first sensor unit has a first sensing field transversely directed toward the travel path axis and defining a first scanning zone. A second sensor unit has a second sensing field transversely directed toward the travel path axis and defining a second scanning zone. The first and second sensing fields are crossing one with another at a location sufficiently remote from the first and second scanning zones so as to not adversely affect the generation of sensor output data, while providing a compact arrangement of sensor units.

Abstract: A system for electro-hydrodynamically extracting energy from wind includes an upstream collector that is biased at an electric potential and induces an electric field. An injector introduces a particle into the electric field. The wind drag on the particle is at least partially opposed by a force of the electric field on the particle. A sensor monitors an ambient atmospheric condition, and a controller changes a parameter of the injector in response to a change in the atmospheric condition.

Abstract: Some embodiments include apparatus and methods having a memory device with diodes coupled to memory elements. Each diode may be formed in a recess of the memory device. The recess may have a polygonal sidewall. The diode may include a first material of a first conductivity type (e.g., n-type) and a second material of a second conductive type (e.g., p-type) formed within the recess.

Abstract: According to one embodiment, a semiconductor memory device includes a first conductive line, a second conductive line, a rectifying element, a switching element, a first side wall film and a second side wall film. The first conductive line extends in a first direction. The second conductive line extends in a second direction crossing the first direction. The rectifying element is connected between the first and second conductive lines. The switching element is connected in series with the rectifying element between the first and second conductive lines. The first side wall film is formed on a side surface of the rectifying element. The second side wall film is formed on a side surface of at least one of the first and second conductive lines. At least one of a film type and a film thickness of the second side wall film is different from that of the first side wall film.

Abstract: A nonvolatile memory device and a method of fabricating the same are provided. The nonvolatile memory device includes a conductive pillar that extends from a substrate in a first direction, a variable resistor that surrounds the conductive pillar, a switching material layer that surrounds the variable resistor, a first conductive layer that extends in a second direction, and a first electrode that extends in a third direction and contacts the first conductive layer and the switching material layer. Not one of the first, second, and third directions is parallel to another one of the first, second, and third directions.

Abstract: A switching device includes a substrate; a first electrode formed over the substrate; a second electrode formed over the first electrode; a switching medium disposed between the first and second electrode; and a nonlinear element disposed between the first and second electrodes and electrically coupled in series to the first electrode and the switching medium. The nonlinear element is configured to change from a first resistance state to a second resistance state on application of a voltage greater than a threshold.

Abstract: A semiconductor memory device includes an isolation layer formed in a substrate and defining an active region, a trench formed in the substrate and defining a part of the active region as an active pillar; a word line formed inside the trench, a sub-source line formed under the trench and crossing the word line, a main source line formed over the substrate, coupled to the sub-source line, and crossing the word line, a variable resistor pattern formed over the active pillar, and a bit line contacting the variable resistor pattern and crossing the word line.

Abstract: A resistive switching memory element including a doped silicon electrode is described, including a first electrode comprising doped silicon having a first work function, a second electrode having a second work function that is different from the first work function by between 0.1 and 1.0 electron volts (eV), a metal oxide layer between the first electrode and the second electrode, the metal oxide layer switches using bulk-mediated switching and has a bandgap of greater than 4 eV, and the memory element switches from a low resistance state to a high resistance state and vice versa.

Abstract: An electrically actuated device includes a first electrode and a second electrode crossing the first electrode at a non-zero angle, thereby forming a junction therebetween. A material is established on the first electrode and at the junction. At least a portion of the material is a matrix region. A current conduction channel extends substantially vertically between the first and second electrodes, and is defined in at least a portion of the material positioned at the junction. The current conduction channel has a controlled profile of dopants therein.

Abstract: A LED device is provided. The LED device has a conductive carrier substrate, a light-emitting structure, a plurality of pillar structures, a dielectric layer, a first electrode and a second electrode. The light-emitting structure is located on the conductive carrier substrate. The pillar structures are located on the light-emitting structure. The dielectric layer is to cover a sidewall of the pillar structure. The first electrode is located over the pillar structure, and the second electrode is located on the conductive carrier substrate.

Abstract: A semiconductor device includes: a silicon layer (12); an intermediate silicide layer (28) that is provided on the silicon layer (12), has openings, and includes barium silicide; and an upper silicide layer (14) that covers the intermediate silicide layer (28), is positioned to be in contact with the silicon layer (12) through the openings, has a higher dopant concentration than the dopant concentration of the intermediate silicide layer (28), and includes barium silicide.

Abstract: A lateral light emitting diode comprises a layer stack disposed on one side of a substrate, the layer stack including a p-type layer, n-type layer, and a p/n junction formed therebetween. The LED may further include a p-electrode disposed on a first side of the substrate and being in contact with the p-type layer on an exposed surface and an n-electrode disposed on the first side of the substrate and being in contact with an exposed surface of an n+ sub-layer of the n-type layer.

Abstract: Disclosed are a light emitting device and a method of manufacturing the same. The light emitting device includes a support substrate, a wafer bonding layer over the support substrate, a second electrode layer, which includes a current blocking layer and a reflective current spreading layer, over the wafer bonding layer, a current injection layer over the second electrode layer, a superlattice structure layer over the current injection layer, a second conductive semiconductor layer over the superlattice structure layer, an active layer over the second conductive semiconductor layer, a first conductive semiconductor layer over the active layer, and a first electrode layer over the first conductive semiconductor layer.

Abstract: A light-emitting device and the method for making the same is disclosed. The light-emitting device is a semiconductor device, comprising a growth substrate, an n-type semiconductor layer, a quantum well active layer and a p-type semiconductor layer. It combines the holographic and the quantum well interdiffusion (QWI) to form a photonic crystal light-emitting device having a dielectric constant of two-dimensional periodic variation or a material composition of two-dimensional periodic variation in the quantum well active layer. The photonic crystal light-emitting devices can enhance the internal efficiency and light extraction efficiency.