Abstract: A composite ceramic body which includes three phases consisting of a MgO phase, a YAP (YAlO3) phase and a spinel (MgAl2O4) phase. This composite ceramic body has a plasma resistance greater than that of alumina and approximately equal to that of MgO. Mechanical properties, such as hardness and bending strength, of the composite ceramic body, are approximately equal or superior to those of Al2O3. A raw material cost and a manufacturing cost thereof are lower than those of a rare-earth oxide. Further, electric conductive particles may be added thereto to lower an electrical resistivity. The composite ceramic body is suitably usable as component parts for a semiconductor manufacturing equipment.

Abstract: A polyamide composition comprising the following components: a) at least 40 parts by weight of a polyamide whose monomer units contain an arithmetic average of at least 7.5 carbon atoms, b) 0.1 to 15 parts by weight of at least one salt with a non-metallic cation, c) 0.1 to 25 parts by weight of at least one dispersant based on esters or amides and d) an electrically conductive carbon selected from the group of carbon black, graphite powder, carbon fibres, carbon nanotubes and/or graphene, in an amount which results in a specific surface resistance of the polymer composition to IEC 60167 of 10?1 to 1010 ?, e) 0 to 5 parts by weight of at least one metal salt, and optionally f) customary assistants and additives, where the polyamide of component a) is not a PA12 if carbon nanotubes are present as component d), and where the sum of the parts by weight of components a) to f) is 100, can be used for production of mouldings with improved electrical conductivity and improved surface quality.

Abstract: An intermediate transfer member that includes a polyimide, a conductive component, and a carboxylic acid functionalized fluoro component.

Abstract: A method of manufacturing a reuse paste includes the steps of preparing a fiber piece housing paste, fabricating a filtered recovery paste and fabricating a reuse paste. At the step of preparing a fiber piece housing paste, there is prepared a fiber piece housing paste including a conductive paste having conductive powder and a resin, and a fiber piece taken away from a prepreg to be used for manufacturing a circuit board. At the step of fabricating a filtered recovery paste, the fiber piece housing paste in a paste state is filtered as it is by using a filter and a filtered recovery paste is thus fabricated. At the step of fabricating a reuse paste, at least one of a solvent, a resin and a paste having a different composition from the filtered recovery paste is added to the filtered recovery paste, and the reuse paste is thus fabricated.

Abstract: The present invention discloses a tablet for ion plating, which is capable of providing high speed film formation of a transparent conductive film suitable for a solar cell, and continuing film formation without generating crack, fracture or splash; and an oxide sintered body for obtaining the same. The oxide sintered body etc. comprising indium oxide as a main component, and tungsten as an additive element, content of tungsten being 0.001 to 0.15, as an atomic ratio of W/(In+W), characterized in that said oxide sintered body is mainly composed of a crystal grain (A) composed of the indium oxide phase with a bixbyite type structure, where tungsten does not make a solid solution, and a crystal grain (B) composed of the indium oxide phase with a bixbyite type structure, where tungsten does not make a solid solution, and has a density of 3.4 to 5.5 g/cm3.

Abstract: A thermoelectric material including a compound represented by Chemical Formula 1 MxCuyBi2-x(Te1-zSez)3 ??(1) wherein in the Chemical Formula, M is at least one metal element, and x, y, and z independently satisfy the following ranges 0<x?0.1, 0<y?0.05, and 0?z?0.5.

Abstract: The invention relates to a photosensitive resin composition, and it has the advantages of a high development speed and good compatibility. The invention also provides a method for manufacturing a color filter, color filter and liquid crystal display device.

Abstract: A dual ratchet pawl jacking system, device, and method are presented for raising and/or lowering a platform bearing carriage along a vertical support. The ratchet pawls alternate supporting the weight of the carriage by engaging against a series of lugs on the vertical support. A first pawl is attached to the main frame of the carriage, and a second pawl is attached to a sub-carriage assembly that slides upward and downward within the carriage frame. A hydraulic jack applies a force upon the sub-carriage, causing the sub-carriage to move within the frame. The weight of the carriage is alternately borne by each pawl as the other pawl is relocated to a new lug. A pair of triggers is used to retract the first pawl and second pawl from the support. The triggers may be enabled to facilitate lowering the carriage, or disabled to facilitate raising the carriage.

Abstract: An apparatus with a wheel engagement mechanism for operation with a jack assembly for engaging and elevating two wheels of a multi-wheeled vehicle relative to the ground is provided. The apparatus includes a base, a support member connected to the base, and a wheel support assembly. The wheel support assembly includes wheel supports connected at the ends of the wheel support assembly that extend outward from the wheel support assembly for supporting two wheels of the vehicle. The apparatus also includes an actuation mechanism for selectively raising and selectively lowering the wheel support assembly to raise and lower the vehicle.

Abstract: A duct rod system to be pushed in a conduit of a defined configuration for installing an elongated element in the conduit and comprising at least one rod having a flexible main body, the flexible main body having a bending stiffness arrangement defined in relation to the defined configuration of the conduit to permit a friction reduction of the flexible main body in the conduit.

Abstract: A system for preventing a vehicle theft has vehicle having wheels, and means for lifting the vehicle when it is left by an owner or a driver so that the wheels are located above a ground so that a thief cannot driver or move the vehicle with the wheels in contact with the ground.

Abstract: This two-stage jack apparatus for lifting aircraft comprises: a tripod base having three legs; a base tube; a ring having an orifice therethrough, wherein the ring engaging end of each leg is attached to the ring; a cylinder housing a jack wherein the base tube supports the cylinder and wherein the cylinder extends through the orifice of the ring; a two stage hydraulic extension attached to the jack; and a dual speed hand pump comprising a high volume low pressure pump for quick ram actuation to the jack point and a low volume high pressure pump used to actuate rams with a hydraulic pump.

Abstract: An apparatus comprising at least one trapezoidal post and at least one attachment device is provided. The trapezoidal post has a wide edge, an opposing narrow edge, and two opposing inclined edges connecting the wide edge and narrow edge. The attachment device includes a recessed portion corresponding to the shape of the wide edge of the trapezoidal post and forms at least two opposing arm sections with inclined edges corresponding to the inclined edges of the trapezoidal post. The attachment device is configured to secure to a position on the trapezoidal post by sliding the attachment device along the wide edge of the trapezoidal post to the position and engaging the opposing arm sections with the inclined edges of the trapezoidal post when a force is exerted against the attachment device and the trapezoidal post. The attachment device is further configured to couple to one or more railing components.

Abstract: A removable handrail assistance device includes a bracket and a handle extension. The bracket may be affixed to a wall or other essentially immobile structure. The handle may be easily inserted into, or removed from, the bracket. The inserted handle extension is capable of supporting a user who holds onto the handle for support while, for example, climbing up or down one or more stairs.

Abstract: A variable resistance memory device that includes a first electrode, a second electrode, a variable resistance layer interposed between the first electrode and a second electrode. A metal oxide electrode is interposed between the first electrode and the variable resistance layer, and the metal oxide electrode does not include a nitrogen constituent.

Abstract: A device is disclosed. The device includes a gate disposed on a substrate in a device region, the gate having first and second sidewalls. The gate includes a gate electrode and a resistive layer disposed between the gate electrode and substrate. First doped regions of a first polarity type are disposed in the substrate adjacent to the first and second sidewalls of the gate. The gate overlaps the first doped regions by a first distance to form overlap portions. A portion of the resistive layer between the gate electrode and overlap portions form first and second storage elements of a multi-bit resistive memory cell.

Abstract: A resistive-change memory element-containing memory device including: a first memory element that includes a first resistive-change layer and a first electrode connected to the first resistive-change layer; and a second memory element that includes a second resistive-change layer and a second electrode connected to the second resistive-change layer, wherein at least one of the thickness and the material of the second resistive-change layer and the area of the second electrode in contact with the second resistive-change layer is different from the corresponding one of the thickness and the material of the first resistive-change layer and the area of the first electrode in contact with the first resistive-change layer.

Abstract: A semiconductor memory device includes a first electrode and a second electrode, a variable resistance material pattern including a first element disposed between the first and second electrode, and a first spacer including the first element, the first spacer disposed adjacent to the variable resistance material pattern.

Abstract: Organometallic precursors may be utilized to form titanium silicon nitride films that act as heaters for phase change memories. By using a combination of TDMAT and TrDMASi, for example in a metal organic chemical vapor deposition chamber, a relatively high percentage of silicon may be achieved in reasonable deposition times, in some embodiments. In one embodiment, two separate bubblers may be utilized to feed the two organometallic compounds in gaseous form to the deposition chamber so that the relative proportions of the precursors can be readily controlled.

Abstract: Memory cell structures for phase change memory. An example memory cell structure comprising includes a bottom electrode comprised of electrically conducting material, and phase change material disposed above the bottom electrode. A layer of thermally insulating material is disposed, at least partially, between the bottom electrode and the phase change material. The thermally insulating material is comprised of Tantalum Oxide. A top electrode is comprised of electrically conducting material.

Abstract: A non-volatile memory device includes first wiring structures elongated in a first direction and separated by a first gap region in a second direction, the first gap region comprising first dielectric material formed in a first process, second wiring structures elongated in a second direction and separated by a second gap region in a first direction, the second gap region comprising second dielectric material formed in a second process, and a resistive switching devices comprising active conductive material, resistive switching material, and a junction material, wherein resistive switching devices are formed at intersections of the first wiring structures and the second wiring structures, wherein the junction material comprising p+ polysilicon material overlying the first wiring material, wherein some resistive switching devices are separated by the first gap region and some resistive switching devices separated by the second gap region.

Abstract: A resistive memory device includes: a memory cell comprising first and second electrodes and a resistive layer formed therebetween, wherein the resistive layer is formed of a resistance change material; and a strained film formed adjacent to the resistive layer and configured to apply a strain to the resistive layer.

Abstract: A semiconductor device has a semiconductor body including a source region, a channel region, and a drain region, which are sequentially arranged in a longitudinal direction and are doped with the same type of impurity, a gate electrode including metal, and a gate dielectric layer interposed between the semiconductor body and the gate electrode.

Abstract: Herein, provided are heavily doped colloidal semiconductor nanocrystals and a process for introducing an impurity to semiconductor nanoparticles, providing control of band gap, Fermi energy and presence of charge carriers. The method is demonstrated using InAs colloidal nanocrystals, which are initially undoped, and are metal-doped (Cu, Ag, Au) by adding a metal salt solution.

Abstract: An electronic device including a first conducting layer, a second conducting layer, and an insulating layer provided between the conducting layers. At least one side wall extends from the first conducting layer to the second conducting layer and includes at least a portion of the first conducting layer, the second conducting layer and the insulating layer. A bias voltage is applied between the first and second conducting layers, wherein responsive to the bias voltage, a two dimensional electron system is induced at least in one of the first conducting layer and the second conducting layer, and wherein electrons from the two dimensional electron system are emitted from the side wall side wall as a result of Coulombic repulsion and travel in air from the one of the first conducting layer and the second conducting layer to the other of the first conducting layer and the second conducting layer.

Abstract: A light-emitting diode (LED) device includes at least one LED unit, each including a substrate; an electrical coupling layer deposited above the substrate; a parallel-connected epitaxial structure deposited above the electrical coupling layer; and an intermediate layer deposited between the electrical coupling layer and the parallel-connected epitaxial structure. In another embodiment, the parallel-connected epitaxial structure is deposited above a conductive layer; the electrical coupling layer is deposited above the parallel-connected epitaxial structure; and the intermediate layer is deposited between the parallel-connected epitaxial structure and the electrical coupling layer.

Abstract: The disclosure relates to a nitride based semiconductor light emitting device with improved luminescence efficiency by increasing a recombination rate of electrons and holes contributing to luminescence, which results from matching the spatial distribution of electron and hole wave functions. The nitride based semiconductor light emitting device according to the present invention includes an n-type nitride layer, an active layer formed on the n-type nitride layer, and a p-type nitride layer formed on the active layer. At this stage, a strain control layer, and the at least one layer has a larger energy bandgap than a quantum well layer in the active layer. The strain control layer is disposed in an area where the quantum well layer of the active layer is formed. Moreover, an energy bandgap of the strain control layer is less than that of quantum barrier of the active layer.

Abstract: A III-nitride based semipolar LED with a light output power of at least 100 milliwatts (mW), or with an External Quantum Efficiency (EQE) of at least 50%, for a current density of at least 100 Amps per centimeter square (A/cm2).

Abstract: A III-nitride based LED with an External Quantum Efficiency (EQE) droop of less than 10% when a junction temperature of the LED is increased from 20 ° C. to at least 100 ° C. at a current density of the LED of at least 20 Amps per centimeter square.

Abstract: A Group III nitride semiconductor light-emitting device includes at least an n-type-layer-side cladding layer, a light-emitting layer, and a p-type-layer-side cladding layer, each of the layers being formed of a Group III nitride semiconductor. The n-type-layer-side cladding layer is a superlattice layer having a periodic structure including an InyGa1-yN (0<y<1) layer, an AlxGa1-xN (0<x<1) layer, and a GaN layer. The n-type-layer-side cladding layer has a four-layer periodic structure including a second GaN layer interposed between the InyGa1-yN (0<y<1) layer and the AlxGa1-xN (0<x<1) layer.

Abstract: A vertical topology light emitting device comprises a support structure, a first adhesion layer, a second adhesion layer, a first metal layer, a second metal layer comprising a portion which directly contacts a GaN-based semiconductor structure, an interface layer, and a contact pad.

Abstract: An electronic or electro-optic device includes a p-type semiconductor layer, an n-type semiconductor layer having a region of contact with the p-type semiconductor layer to provide a p-n junction, a first electrical lead in electrical connection with the p-type semiconductor layer, and a second electrical lead in electrical connection with the n-type semiconductor layer. At least one of the p-type and n-type semiconductor layers includes a doped topological-insulator material having an electrically conducting surface, and one of the first and second electrical leads is electrically connected to the electrically conducting surface of the topological-insulator material.

Abstract: In at least one embodiment, an infrared (IR) sensor comprising a thermopile is provided. The thermopile comprises a substrate and an absorber. The absorber is positioned above the substrate and a gap is formed between the absorber and the substrate. The absorber receives IR from a scene and generates an electrical output indicative of a temperature of the scene. The absorber is formed of a super lattice quantum well structure such that the absorber is thermally isolated from the substrate. In another embodiment, a method for forming an infrared (IR) detector is provided. The method comprises forming a substrate and forming an absorber with a plurality of alternating first and second layers with a super lattice quantum well structure. The method further comprises positioning the absorber about the substrate such that a gap is formed to cause the absorber to be suspended about the substrate.

Abstract: Graphene transistor devices and methods of their fabrication are disclosed. One such graphene transistor device includes source and drain electrodes and a gate structure including a dielectric sidewall spacer that is disposed between the source and drain electrodes. The device further includes a graphene layer that is adjacent to at least one of the source and drain electrodes, where an interface between the source/drain electrode(s) and the graphene layer maintains a consistent degree of electrical conductivity throughout the interface.

Abstract: A topological qubit wire hosts Majorana zero-energy modes and includes a superconductor, which may be an s-wave superconductor, and a quasi-1D nanowire, which may be a semi-conductor. The Majorana zero-energy modes are localized at ends of the quasi-1D nanowire, which may be sized and shaped to provide occupancy of a few transverse modes in a first direction and occupancy of a few transverse modes in a second direction. In some instances, the occupancy in the first direction may be greater than or equal to 3, and the occupancy in the second direction may be 1.

Abstract: In an organic light-emitting display device and a method of manufacturing the same, the organic light-emitting display device includes: a silicon layer formed on a substrate; and a thin film transistor (TFT) and an organic light-emitting device that are formed on the silicon layer. The silicon layer comprises a conductive doping silicon portion for forming a part of an active layer included in the TFT and an insulating intrinsic silicon portion surrounding the doping silicon portion. According to the organic light-emitting display device of the present invention, manufacturing costs may be reduced due to a reduction in the number of masks, and the manufacturing process of the organic light-emitting display device may be simplified.

Abstract: In a method of manufacturing an optical sheet, a stacked structure may be formed by alternatively and repeatedly stacking at least one transparent layer and at least one light scattering layer. A first cut face may be formed by partially cutting the stacked structure. A second cut face may be formed by partially cutting the stacked structure. The second cut face may be parallel to the first cut face.

Abstract: The spacer in a spin-valve is replaced with an organic layer, allowing for numerous applications, including light-emitting structures. The invention demonstrates that the spin coherence of the organic material is sufficiently long that the carriers do not lose their spin memory even in traversing a thicker passive barrier. At least three methods to fabricate the organic spin-valve devices are disclosed, in which the difficulties associated with depositing the ferromagnetic (FM) and organic layers are addressed.

Abstract: An organic light-emitting device comprises an anode; a cathode; a charge transporting layer comprising a charge-transporting material doped with a light-emitting dopant between the anode and the cathode; and a light-emitting layer between the anode and the cathode. The x-coordinate value and/or the y-coordinate value of CIE(x,y) coordinates of light emitted from the device is no more than 0.1, and preferably no more than 0.05, from the respective x- or y-coordinate value of a control device in which the charge transporting layer is not doped with a light-emitting dopant. The light emitting layer and charge transport material preferably comprise polymers including aryl or heteroaryl repeat units.

Abstract: An organic light-emitting device includes a lower electrode, an upper electrode, and an organic layer disposed between the lower electrode and the upper electrode, the organic layer including a charge transport layer and a mixed layer in contact with the charge transport layer, the mixed layer including a host, a first dopant, and a charge transporting material, the first dopant including a first functional group, the charge transporting material including a second functional group, the first dopant being drawn to a charge transport layer contact surface where the mixed layer is in contact with the charge transport layer, and the charge transporting material being drawn to the mixed layer surface other than the charge transport layer contact surface. With the present invention, the concentrations of the molecules contained in the mixed layer of the light-emitting layer and the charge transport layer can be easily controlled.

Abstract: A highly reliable light-emitting device is provided. Damage to an element due to externally applied physical power is suppressed. Alternatively, in a process of pressure-bonding of an FPC, damage to a resin and a wiring which are in contact with a flexible substrate due to heat is suppressed. A neutral plane at which stress-strain is not generated when a flexible light-emitting device including an organic EL element is deformed, is positioned in the vicinity of a transistor and the organic EL element. Alternatively, the hardness of the outermost surface of a light-emitting device is high. Alternatively, a substrate having a coefficient of thermal expansion of 10 ppm/K or lower is used as a substrate that overlaps with a terminal portion connected to an FPC.

Abstract: An organic light-emitting display apparatus includes a thin film transistor including an active layer, a gate electrode, a source electrode, and a drain electrode, an organic light-emitting device including a pixel electrode connected to the thin film transistor, an intermediate layer including a light-emitting layer, and an opposed electrode, and a first wiring and a second wiring arranged in different layers on a substrate.

Abstract: A structure of an EL display device which has an increased display area is provided. Further, a structure of an EL display device which has a high definition display is provided. An auxiliary electrode is formed over a first partition and side surfaces of the auxiliary electrode are covered with a second partition. A top surface of the auxiliary electrode is in contact with the conductive film which is one electrode of a light-emitting element and has a light-transmitting property, which enables a large-area display. Further, even the distance between the adjacent light-emitting elements is shortened, the auxiliary electrode can be provided between the adjacent light-emitting elements, which enables a high definition display.

Abstract: A porous glass substrate for displays and a method of manufacturing the same, with which the optical characteristics of a display such as an organic light-emitting device (OLED) can be improved. The porous glass substrate includes a glass substrate and a porous layer formed in at least one portion of one surface of the glass substrate and extending into the glass substrate, the refractive index of the porous layer being smaller than the refractive index of the glass substrate. The porous layer has a plurality of pores which is formed in the glass substrate such that at least one component of the glass substrate except for silicon dioxide (SiO2) is eluted from the glass substrate.

Abstract: Provided is a 9,10-dihydroacridine derivative represented by the following Formula (I): The 9,10-dihydroacridine derivative can be used as a hole transport material or an emission material of an organic light emitting device. An organic light emitting device comprising the 9,10-dihydroacridine derivative is also provided and has an improved optical performance.

Abstract: A compound for an organic optoelectronic device, the compound being represented by the following Chemical Formula 1:

Abstract: Compounds are provided that comprise a ligand having a 5-substituted 2-phenylquinoline. In particular, the 2-phenylquinoline may be substituted with a cycloalkyl containing group at the 5-position. These compounds may be used in organic light emitting devices, in particular as red emitters in the emissive layer of such devices, to provide devices having improved properties.

Abstract: A method for producing a mold includes: applying a block copolymer solution made of first and second polymers on a base member; performing a first annealing process at a temperature higher than Tg of the block copolymer after drying the coating film; forming a concavity and convexity structure on the base member by removing the second polymer by an etching process; performing a second annealing process of the concavity and convexity structure at a temperature higher than Tg of the first polymer; forming a seed layer on the structure; laminating or stacking a metal layer on the seed layer by an electroforming; and peeling off the metal layer from the base member. The second annealing process enables satisfactory transfer of a concavity and convexity structure on the base member onto the metal layer.

Abstract: It is an object to provide a light-emitting device which has high power efficiency and high light-extraction efficiency and emits light uniformly in a plane. It is another object to provide a manufacturing method of the light-emitting device. It is another object to provide a lighting device including the light-emitting device. One embodiment of the present invention provides a light-emitting device which includes: a first electrode provided over a substrate; a layer containing a light-emitting organic compound provided over the first electrode; an island-shaped insulating layer provided over the layer containing the light-emitting organic compound; an island-shaped auxiliary electrode layer provided over the island-shaped insulating layer; and a second electrode having a property of transmitting visible light provided over the layer containing the light-emitting organic compound and the island-shaped auxiliary electrode layer.

Abstract: Objects of the present invention are to provide: a light-emitting element having a long lifetime and good emission efficiency and drive voltage. One embodiment of the invention is a light-emitting element including, between an anode and a cathode, at least a stack structure in which a first layer, a second layer, and a light-emitting layer are provided in order from the anode side. The first layer includes a first organic compound and an electron-accepting compound. The second layer includes a second organic compound having a HOMO level differing from the HOMO level of the first organic compound by from ?0.2 eV to +0.2 eV. The light-emitting layer includes a third organic compound having a HOMO level differing from the HOMO level of the second organic compound by from ?0.2 eV to +0.2 eV and a light-emitting substance having a hole-trapping property with respect to the third organic compound.