Abstract: A photoelectric conversion device comprising an electrically conductive film, an organic photoelectric conversion film, and a transparent electrically conductive film, wherein the organic photoelectric conversion film contains a compound represented by the following formula (1) and an n-type organic semiconductor: wherein each of R1 and R2 independently represents a substituted aryl group, an unsubstituted aryl group, a substituted heteroaryl group or an unsubstituted heteroaryl group, each of R3 to R11 independently represents a hydrogen atom or a substituent provided that an acidic group is excluded, m represents 0 or 1, n represents an integer of 0 or more, R1 and R2, R3 and R4, R3 and R5, R5 and R6, R6 and R8, R7 and R8, R7 and R9, or R10 and R11 may be combined each other to form a ring, and when n is an integer of 2 or more, out of a plurality of R7's and R8's, a pair of R7's, a pair of R8's, or a pair of R7 and R8 may be combined each other to form a ring.

Abstract: There is provided a process for forming a layer of electroactive material having a substantially flat profile. The process includes the steps of providing a workpiece having at least one active area; depositing a liquid composition including the electroactive material onto the workpiece in the active area, to form a wet layer; treating the wet layer on the workpiece at a controlled temperature in the range of ?25 to 80° C. and under a vacuum in the range of 10?6 to 1,000 Torr, for a first period of 1-100 minutes, to form a partially dried layer; and heating the partially dried layer to a temperature above 100° C. for a second period of 1-50 minutes to form a dried layer.

Abstract: This invention relates to deuterated compounds that are useful in electroluminescent applications. It also relates to electronic devices in which the active layer includes such a deuterated compound.

Abstract: There is provided an EL light-emitting device with less uneven brightness.

Abstract: An EL element having a novel structure is provided, which is suitable for AC drive. A light-emitting element of the invention is provided with material layers (material layers each having approximately symmetric I-V characteristics with respect to the zero point in a graph having the abscissa axis showing current values and the ordinate axis showing voltage values) between a first electrode and a layer including an organic compound and between the layer including the organic compound and a second electrode respectively. Specifically, each of the material layers is a composite layer including a metal oxide and an organic compound.

Abstract: An organic EL display unit is an organic EL display unit which includes a first substrate; an organic EL element which is located on the first substrate, which includes a first electrode, an organic layer containing at least an organic light emitting layer, and a second electrode, and which is configured to emit excitation light; a second substrate; and an optical conversion layer which is located on the second substrate and which is configured to emit light to the outside through a display surface, the light being obtained by conversion of a color tone of the excitation light, the display surface is flat and rectangular, and the second substrate is divided into a plurality of sections along a long side direction of the display surface.

Abstract: The invention provides a photopolymerisable or photocrosslinkable reactive mesogen for forming a charge transporting or light emitting polymer network, the mesogen having an asymmetric structure (II): B1—S1-A1-M-(A-S—B)n (II) wherein: A and A1 are chromophores; S and S1 are spacers; B and B1 are endgroups which are susceptible to photopolymerisation or photocrosslinking; M is a non-chromophoric aliphatic, alicyclic or aromatic moiety; and n is an integer from 1 to 3; wherein, when the value of n is greater than 1, each of the groups A, S and B may be the same or different. Preferably, M is of the formula Y—Zm, wherein Y is an aliphatic, alicyclic, aromatic or heterocyclic moiety, Z is an aliphatic linking group and m is an integer from 2 to 4, and wherein each of the Z groups may be the same or different.

Abstract: To provide an organic EL element material that is capable of enhancing the light emission efficiency and the lifetime of the element as compared to an ordinary organic EL element material, and an organic EL element using the same. Specifically, to provide an aromatic amine derivative represented by Ar1Ar2Ar3N, and an organic EL element using the same. Representative compounds include the following.

Abstract: There is provided an electroactive composition including (a) a host, (b) a dopant, and (c) an additive having Formula I In Formula I, E is the same or different at each occurrence and is N or C—Ar1 and Ar1 is the same or different at each occurrence and is H, D, or aryl. At least one E=N, and at least one Ar1 is aryl.

Abstract: In an organic EL display device (100), an insulating layer (113) includes a first insulating film (113a) and a second insulating film (113b) provided thereabove, a plurality of upper electrodes (115c) are each provided to cover a corresponding one of a plurality of organic EL layers (115b), and a reflection film (114) is provided between the first insulating film (113a) and the second insulating film (113b), corresponding to a region N other than the a light emission region. The reflection film (114) reflects toward a sealing substrate (120) a portion of light generated in each organic EL layer (115b) which is diffused into the region N other than the light emission region so that the portion of the light is transmitted through a separation wall portion (116) and the sealing substrate (120) to be viewed as an image on the sealing substrate.

Abstract: There is provided an organic electronic device including a light-transmitting substrate, an enhancement film in direct contact with the substrate, an anode, a photoactive layer, and a cathode. The anode can be either a single layer or a multilayer. The single layer anode includes an alloy of a first metal having an electrical conductivity greater than 105 Scm?1 and a real refractive index less than 2.1 in the range of 380 to 780 nm. The multilayer electrode includes: (a) layer M1 having a first thickness and including the first metal; and (b) layer M2 having a second thickness and including a second metal, an alloy of the second metal, or a mixed metal oxide, where the second metal has an electrical conductivity less than 105 Scm?1. In the multilayer electrode, layer M1 is in physical contact with layer M2, and the first thickness is greater than the second thickness.

Abstract: A film formation substrate (200) is a film formation substrate having a plurality of vapor deposition regions (24R and 24G) (i) which are arranged along a predetermined direction and (ii) in which respective vapor-deposited films (23R and 23G) are provided. The vapor-deposited film (24R) has inclined side surfaces 23s which are inclined with respect to a direction normal to the film formation substrate (200). A width, in the predetermined direction, of the vapor-deposited film (23R) is larger than the sum of (i) a width, in the predetermined direction, of the vapor deposition region (24R) and (ii) a width, in the predetermined direction, of a region (29) between the vapor deposition region (24R) and the vapor deposition region (24G).

Abstract: The present invention provides an organic light-emitting device showing characteristics of high efficiency and long operating life. The organic light-emitting device includes an anode, a cathode, and an organic compound layer disposed between the anode and the cathode. The organic compound layer includes at least a light-emitting layer that contains a dibenzothiophene dioxide compound shown in claim 1.

Abstract: An organic electroluminescence device includes: a first substrate, first electrode, organic compound layer and second electrode in this sequence. A first insulative portion and a second auxiliary electrode are formed between the first electrode and the second electrode in this sequence from the first electrode. The second electrode is in electric continuity with the second auxiliary electrode. The first electrode and the organic compound layer are insulated from the second auxiliary electrode by the first insulative portion.

Abstract: The present invention is to provide an organic EL panel that is able to prevent the problems resulting from the unnecessary bank residues at a relatively low cost and has excellent light-emitting characteristics and a long life, and manufacturing method of the organic EL panel. Specifically, an organic EL element is obtained by forming organic EL elements by sequentially laminating an anode, a transparent conductive film, a hole-injection layer, a buffer layer, an organic light-emitting layer, a cathode, and a passivation layer on one surface of a substrate. Each bank residue positioned on the surface of the hole-injection layer has a diameter not greater than 0.2 ?m in one direction when the substrate is seen in plan view. Preferably, when the substrate is seen in plan view, the area of each bank residue is set to be not greater than 0.4 ?m2, or more preferably not greater than 0.04 ?m2.

Abstract: The present invention provides an organic compound of which basic skeleton emits light in a yellow range by itself with high luminous efficiency. The organic compound is represented by claim 1.

Abstract: A device comprising an array of transistors, including: patterned conductive layers located at lower and upper levels in a stack of layers on a substrate, which patterned conductive layers define gate conductors and source-drain electrodes of the array of transistors; wherein the stack of layers further comprises a dielectric layer below said lower level, and a further patterned conductive layer below said dielectric layer; and wherein said further patterned conductive layer both provides an electrical function in said array of transistors via said dielectric layer, and defines openings via which the dielectric layer serves to increase the strength of adhesion between the device substrate and the patterned conductive layer at said lower level.

Abstract: A light emitting device includes an excitation light source element that emits excitation light; a substrate that faces the excitation light source element; a fluorescent layer located on the substrate, the fluorescent layer being excited by the excitation light to emit fluorescence; an optical reflection body disposed on a side surface of the fluorescent layer, the side surface extending in a direction parallel to a stacking direction of the substrate and the fluorescent layer; and a low-refractive-index material layer disposed between the fluorescent layer and the substrate, the low-refractive-index material layer having a refractive index lower than that of the substrate.

Abstract: A thin film transistor array panel includes: a gate line disposed on a substrate and including a gate electrode, a semiconductor layer including an oxide semiconductor disposed on the substrate, and a data wire layer disposed on the substrate and including a data line intersecting the gate line, a source electrode connected to the data line, and a drain electrode facing the source electrode. In addition, at least one of the data line, the source electrode or the drain electrode of the data wire layer includes a barrier layer and a main wiring layer disposed on the barrier layer. The main wiring layer includes copper or a copper alloy. Also, the barrier layer includes a metal oxide, and the metal oxide includes zinc.

Abstract: In a semiconductor device including a transistor, an oxygen release type oxide insulating film is formed in contact with a channel formation region of the transistor. The channel formation region is formed in an oxide semiconductor film. Oxygen is supplied from the oxide insulating film to the oxide semiconductor film. Further, an oxygen bather film which penetrates the oxide insulating film is formed around the channel formation region, whereby a diffusion of oxygen to the wiring, the electrode, and the like connected to the transistor can be suppressed.

Abstract: A highly reliable semiconductor device the yield of which can be prevented from decreasing due to electrostatic discharge damage is provided. A semiconductor device is provided which includes a gate electrode layer, a gate insulating layer over the gate electrode layer, an oxide insulating layer over the gate insulating layer, an oxide semiconductor layer being above and in contact with the oxide insulating layer and overlapping with the gate electrode layer, and a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor layer. The gate insulating layer includes a silicon film containing nitrogen. The oxide insulating layer contains one or more metal elements selected from the constituent elements of the oxide semiconductor layer. The thickness of the gate insulating layer is larger than that of the oxide insulating layer.

Abstract: A highly reliable semiconductor device the yield of which can be prevented from decreasing due to electrostatic discharge damage is provided. A semiconductor device is provided which includes a gate electrode layer, a first gate insulating layer over the gate electrode layer, a second gate insulating layer being over the first gate insulating layer and having a smaller thickness than the first gate insulating layer, an oxide semiconductor layer over the second gate insulating layer, and a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor layer. The first gate insulating layer contains nitrogen and has a spin density of 1×1017 spins/cm3 or less corresponding to a signal that appears at a g-factor of 2.003 in electron spin resonance spectroscopy. The second gate insulating layer contains nitrogen and has a lower hydrogen concentration than the first gate insulating layer.

Abstract: A more convenient and highly reliable semiconductor device which has a transistor including an oxide semiconductor with higher impact resistance used for a variety of applications is provided. A semiconductor device has a bottom-gate transistor including a gate electrode layer, a gate insulating layer, and an oxide semiconductor layer over a substrate, an insulating layer over the transistor, and a conductive layer over the insulating layer. The insulating layer covers the oxide semiconductor layer and is in contact with the gate insulating layer. In a channel width direction of the oxide semiconductor layer, end portions of the gate insulating layer and the insulating layer are aligned with each other over the gate electrode layer, and the conductive layer covers a channel formation region of the oxide semiconductor layer and the end portions of the gate insulating layer and the insulating layer and is in contact with the gate electrode layer.

Abstract: An object is to provide a display device with excellent display characteristics, where a pixel circuit and a driver circuit provided over one substrate are formed using transistors which have different structures corresponding to characteristics of the respective circuits. The driver circuit portion includes a driver circuit transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using a metal film, and a channel layer is formed using an oxide semiconductor. The pixel portion includes a pixel transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using an oxide conductor, and a semiconductor layer is formed using an oxide semiconductor. The pixel transistor is formed using a light-transmitting material, and thus, a display device with higher aperture ratio can be manufactured.

Abstract: Reading margin is improved in a MTJ designed for MRAM applications by employing a pinned layer with an AP2/Ru/AP1 configuration wherein the AP1 layer is a CoFeB/CoFe composite and by forming a MgO tunnel barrier adjacent to the CoFe AP1 layer by a sequence that involves depositing and oxidizing a first Mg layer with a radical oxidation (ROX) process, depositing and oxidizing a second Mg layer with a ROX method, and depositing a third Mg layer on the oxidized second Mg layer. The third Mg layer becomes oxidized during a subsequent anneal. MTJ performance may be further improved by selecting a composite free layer having a Fe/NiFeHf or CoFe/Fe/NiFeHf configuration where the NiFeHf layer adjoins a capping layer in a bottom spin valve configuration. As a result, read margin is optimized simultaneously with improved MR ratio, a reduction in bit line switching current, and a lower number of shorted bits.

Abstract: An object is to prevent an impurity such as moisture and oxygen from being mixed into an oxide semiconductor and suppress variation in semiconductor characteristics of a semiconductor device in which an oxide semiconductor is used. Another object is to provide a semiconductor device with high reliability. A gate insulating film provided over a substrate having an insulating surface, a source and a drain electrode which are provided over the gate insulating film, a first oxide semiconductor layer provided over the source electrode and the drain electrode, and a source and a drain region which are provided between the source electrode and the drain electrode and the first oxide semiconductor layer are provided. A barrier film is provided in contact with the first oxide semiconductor layer.

Abstract: An object is to reduce parasitic capacitance of a signal line included in a liquid crystal display device. A transistor including an oxide semiconductor layer is used as a transistor provided in each pixel. Note that the oxide semiconductor layer is an oxide semiconductor layer which is highly purified by thoroughly removing impurities (hydrogen, water, or the like) which become electron suppliers (donors). Thus, the amount of leakage current (off-state current) can be reduced when the transistor is off. Therefore, a voltage applied to a liquid crystal element can be held without providing a capacitor in each pixel. In addition, a capacitor wiring extending to a pixel portion of the liquid crystal display device can be eliminated. Therefore, parasitic capacitance in a region where the signal line and the capacitor wiring intersect with each other can be eliminated.

Abstract: It is an object to provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a semiconductor device including an inverted staggered thin film transistor whose semiconductor layer is an oxide semiconductor layer, a buffer layer is provided over the oxide semiconductor layer. The buffer layer is in contact with a channel formation region of the semiconductor layer and source and drain electrode layers. A film of the buffer layer has resistance distribution. A region provided over the channel formation region of the semiconductor layer has lower electrical conductivity than the channel formation region of the semiconductor layer, and a region in contact with the source and drain electrode layers has higher electrical conductivity than the channel formation region of the semiconductor layer.

Abstract: It is an object to provide a highly reliable semiconductor device with good electrical characteristics and a display device including the semiconductor device as a switching element. In a transistor including an oxide semiconductor layer, a needle crystal group provided on at least one surface side of the oxide semiconductor layer grows in a c-axis direction perpendicular to the surface and includes an a-b plane parallel to the surface, and a portion except for the needle crystal group is an amorphous region or a region in which amorphousness and microcrystals are mixed. Accordingly, a highly reliable semiconductor device with good electrical characteristics can be formed.

Abstract: Via chain and serpentine/comb test structures are in kerf areas of a wafer. The via chain test structures comprise a first via chain and a second via chain in a first kerf area. The via chain test structures are formed such that geometrically shaped portions of the first via chain and geometrically shaped portions of the second via chain alternate along the length of the first kerf area.

Abstract: A photoelectric conversion device is disclosed. The photoelectric conversion device includes an electrode layer, an intermediate layer on the electrode layer and a light-absorbing layer on the intermediate layer. The electrode layer includes molybdenum. The light-absorbing layer includes one or more Group I-B elements, one or more Group III-B elements, and at least one element of sulfur and selenium. The intermediate layer includes an amorphous layer. The amorphous layer includes at least one of the sulfur and the selenium which are contained in the light-absorbing layer, and the molybdenum.

Abstract: In order to improve the transmissivity of each pixel and the brightness of a high-definition screen, a TFT and a projection are disposed in each pixel, a source electrode of the TFT extends so as to cover the projection, an inorganic passivation film is formed over the TFT and the projection, an organic passivation film is formed on the inorganic passivation film on the TFT, an opposed electrode is formed on the organic passivation film, an upper insulation film is formed over the opposed electrode, a pixel electrode is formed on the upper insulation film, and the pixel electrode is connected to the source electrode through a connection hole formed in the inorganic passivation film and the upper insulation film on the projection. Accordingly, the diameter of a through-hole can be made smaller.

Abstract: An array substrate of an LCD having: a gate line formed along a first direction;a data line formed along a second direction crossing the first direction;first and second pixel electrodes spaced apart from each other;a thin-film transistor includes a gate electrode connected to the gate line; a source electrode connected to the data line and partially overlapping the second pixel electrode; and a drain electrode connected to the first pixel electrode spaced apart from the second pixel electrode along the second direction. The source electrode or the gate electrode overlaps the second pixel electrode but the drain electrode does not overlap the second pixel electrode. Electrical coupling between the first and second pixel electrodes are avoided with such configuration.

Abstract: The purpose of the present invention is to provide a reliable semiconductor device comprising TFTs having a large area integrated circuit with low wiring resistance. One of the features of the present invention is that an LDD region including a region which overlaps with a gate electrode and a region which does not overlap with the gate electrode is provided in one TFT.

Abstract: A thin film transistor array panel includes: a substrate; a gate line and a storage electrode that are disposed on the substrate; a data line that crosses the gate line and storage electrode line; a thin film transistor that is connected with the gate line and data line; and a pixel electrode that is connected to the thin film transistor. The storage electrode includes a first storage electrode that is parallel to the gate line, second storage electrodes that extend on opposing sides of the data line from the first storage electrode, a connection part that crosses the data line and connects pairs of the second storage electrodes, and a connection bridge that crosses the gate line and connects a second storage electrode to a second storage electrode of an adjacent pixel.

Abstract: A semiconductor device may include a plurality of memory cells. The memory cells may be formed with respective fin shaped active regions with respective recesses formed therein. Thicknesses of the fins may be made relatively thicker around the recesses, such as by selective epitaxial growth around the recesses. The additional thicknesses may be asymmetrical so that portions of the fin on one side are larger than an opposite side. Related methods and systems are also disclosed.

Abstract: A field effect semiconductor device includes a semiconductor body having a main horizontal surface and a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type arranged between the first semiconductor region and the main horizontal surface, an insulating layer arranged on the main horizontal surface, and a first metallization arranged on the insulating layer. The first and second semiconductor regions form a pn-junction. The semiconductor body further has a deep trench extending from the main horizontal surface vertically below the pn-junction and including a conductive region insulated from the first semiconductor region and the second semiconductor region, and a narrow trench including a polycrystalline semiconductor region extending from the first metallization, through the insulating layer and at least to the conductive region.

Abstract: A point light source is converted into a plane light source having a satisfactory uniformity. The point light source is converted into a line light source by means of a linear light guiding plate, and further into the plane light source by means of a plane-like light guiding plate. Light from the point light source is reflected at a lamp reflector to be incident on at least two side surfaces of the plane-like light guiding plate.

Abstract: In a thin-film semiconductor device, a semiconductor layer has a bandgap energy of 1.6 eV or less, an insulating layer formed above the semiconductor layer includes: a first insulating layer region placed outside of a first contact opening and above one end of a gate electrode; a second insulating layer region placed outside of a second contact opening and above the other end of the gate electrode which opposes the one end; and a third insulating layer region being rectangular and placed between the first contact opening and the second contact opening.

Abstract: A thin-film transistor (TFT) array substrate and manufacturing method thereof are disclosed herein. A first metal layer is deposited on a substrate, and a first mask is utilized for patterning the first metal layer to form a gate. A gate insulative layer and a semiconductive layer are deposited on the substrate, and a second mask is utilized to pattern the semiconductive layer except which above the gate is retained. A transparent conductive layer and a second metal layer are disposed on the substrate, and a multi-stage mask adjustment is used for patterning the transparent conductive layer and the second metal layer to form a source, a drain and a common electrode. A reflective layer is formed with the second metal layer on the common electrode.

Abstract: In the present invention, a semiconductor film is formed through a sputtering method, and then, the semiconductor film is crystallized. After the crystallization, a patterning step is carried out to form an active layer with a desired shape. The present invention is also characterized by forming a semiconductor film through a sputtering method, subsequently forming an insulating film. Next, the semiconductor film is crystallized through the insulating film, so that a crystalline semiconductor film is formed. According this structure, it is possible to obtain a thin film transistor with a good electronic property and a high reliability in a safe processing environment.

Abstract: The present invention discloses a Schottky barrier diode (SBD) and a manufacturing method thereof. The SBD includes: a semiconductor layer, which has multiple openings forming an opening array; and an anode, which has multiple conductive protrusions protruding into the multiple openings and forming a conductive array; wherein a Schottky contact is formed between the semiconductor layer and the anode.

Abstract: An optocoupler includes a GaN-based photosensor disposed on a substrate and a GaN-based light source disposed on the same substrate as the GaN-based photosensor. A transparent material is interposed between the GaN-based photosensor and the GaN-based light source. The transparent material provides galvanic isolation and forms an optical channel between the GaN-based photosensor and the GaN-based light source.

Abstract: A semiconductor device includes a semiconductor body including a plurality of compound semiconductor layers and a two-dimensional charge carrier gas channel region formed in one of the compound semiconductor layers. The semiconductor device further includes a contact structure disposed in the semiconductor body. The contact structure includes a metal region and a doped region. The metal region extends into the semiconductor body from a first side of the semiconductor body to at least the compound semiconductor layer which includes the channel region. The doped region is formed in the semiconductor body between the metal region and the channel region so that the channel region is electrically connected to the metal region through the doped region.

Abstract: A semiconductor device includes a semiconductor element having a substrate of GaAs, InP, or GaN, and an element securing member bonded to the semiconductor element by solder. The element securing member is a composite material of Cu and carbon or a composite of Al and carbon.

Abstract: Systems, methods, and other embodiments associated with increased light extraction efficiency in light emitting diodes are described. According to one embodiment, a light emitting diode apparatus includes a device having a first material and a second material separated by an active region. The apparatus further includes a plurality of curvatures formed on the second semiconductor material. The curvatures may be hemi-sphereical, hemi-ellipsoidic, micro domes, or micro domes with a flat surface. The plurality of curvatures and the second material have the same index of refraction.

Abstract: Disclosed is a semiconductor device including first and second semiconductor elements, first and second external connection terminals and a sealing member. The first external connection terminal is provided at a first surface of the first semiconductor element. The second semiconductor element is provided at a second surface side, that is at a side opposite to the first surface, of the first semiconductor element. The second external connection terminal is connected to the second semiconductor element, and the second external connection terminal is configured to be, together with the first external connection terminal, connected to a wiring board. The sealing member seals the first and second semiconductor elements and exposes a portion, that is configured to be connected to the wiring board, of the first external connection terminal and a portion, that is configured to be connected to the wiring board, of the second external connection terminal.

Abstract: Disclosed is a semiconductor device comprising a substrate (10); at least one semiconducting layer (12) comprising a nitride of a group 13 element on said substrate; and an ohmic contact (20) on the at least one semiconducting layer, said ohmic contact comprising a silicon-comprising portion (22) on the at least one semiconducting layer and a metal portion (24) adjacent to and extending over said silicon-comprising portion, the metal portion comprising titanium and a further metal. A method of manufacturing such a semiconductor device is also disclosed.

Abstract: A semiconductor light emitting device includes: a laminated structure body including an n-type semiconductor layer, a p-type semiconductor layer and a light emitting layer provided between the n-type semiconductor layer and the p-type semiconductor layer; a first electrode connected to the n-type semiconductor layer and containing at least one of silver and a silver alloy; and a second electrode connected to the p-type semiconductor layer.

Abstract: In one embodiment, a semiconductor package includes a vertical semiconductor chip having a first major surface on one side of the vertical semiconductor chip and a second major surface on an opposite side of the vertical semiconductor chip. The first major surface includes a first contact region and the second major surface includes a second contact region. The vertical semiconductor chip is configured to regulate flow of current from the first contact region to the second contact region along a current flow direction. A back side conductor is disposed at the second contact region of the second major surface. The semiconductor package further includes a first encapsulant in which the vertical semiconductor chip and the back side conductor are disposed.