Abstract: An exhaust valve spindle for an exhaust valve in an internal combustion engine has a shaft and a valve disc at the lower end of the shaft, which valve disc at its upper surface has a seat area. The seat area is of a seat material comprising at least from 34.0 to 44.0% Cr, an aggregate amount of Nb and Ta in the range from at least 2.8 to 6.1%, from 0.3 to 2.0% Ti, at the most 0.2% Al, at the most 0.04% B, at the most 0.8% Fe, at the most 0.04% C, at the most 0.4% Si, and a balance of Ni, where the amount of Ti+Nb+0.5×Ta is in the range from 3.4 to 6.6%, and where the amount of Nb+0.5×Ta is less than 3.0% if the amount of Ti is larger than 1.5%.

Abstract: An un-reacted substantially formaldehyde free curable binder solution for binding loose matter consists essentially of a solution obtainable by dissolving a reducing sugar, an ammonium salt acid precursor, optionally a carboxylic acid or a precursor thereof and optionally ammonia in water.

Abstract: The present invention provides magnetically responsive activated carbon, and a method of forming magnetically responsive activated carbon. The method of forming magnetically responsive activated carbon typically includes providing activated carbon in a solution containing ions of ferrite forming elements, wherein at least one of the ferrite forming elements has an oxidation state of +3 and at least a second of the ferrite forming elements has an oxidation state of +2, and increasing pH of the solution to precipitate particles of ferrite that bond to the activated carbon, wherein the activated carbon having the ferrite particles bonded thereto have a positive magnetic susceptibility. The present invention also provides a method of filtering waste water using magnetic activated carbon.

Abstract: A binary composition of 2,3,3,3-tetrafluoropropene and of ammonia, and also to the use thereof, in particular as a heat transfer fluid.

Abstract: A method for producing a thermally conductive sheet, having a thermal conductivity in a direction perpendicular to a thickness direction of 10 W/m·K or more, includes a preparing step of preparing a resin composition containing a resin and a thermally conductive inorganic particle and a sheet forming step of forming a sheet by further increasing the viscosity after hot-pressing the resin composition to be brought from a melted state into a semi-solid state.

Abstract: A chemical mechanical polishing (CMP) slurry used for phase change memory, characterized by comprising polishing particles, oxidizing agents, chelating agents, inhibiting agents, surface active agents, pH adjusting agents/buffering agents and aqueous medium. Compared with the prior art, the present invention provides a chemical mechanical polishing slurry, by which the controllable selectivity of phase change material/bottom dielectric material (1:1 to 180:1) can be achieved and the phase change properties of phase change materials can be maintained after polishing with the polished surface smooth and free from scratch, meeting process requirements of phase change memory.

Abstract: Processes and compositions for multi-transition metal-containing cathode materials for lithium ion batteries. Processes encompass providing a composition which can be a mixture of molecular precursor compounds having the formulas [LiM(x+)(OR)1+x] and [Li2M(x+)(OR)2+x]. The metal atoms, M, can be Ni, V, Co, Mn, or Fe, and the —OR groups can be alkoxy, aryloxy, heteroaryloxy, alkenyloxy, siloxy, phosphinate, phosphonate, and phosphate. The compositions can be converted and annealed to provide cathode materials.

Abstract: A hydrogel matrix and an osmotically active material immobilized in the matrix can be combined into superabsorbent preparations that are capable of adsorbing large amounts of water. The superabsorbent preparations of the invention have advantages in the use of absorbent materials for physiological fluids, such as diapers, incontinence products, wound dressings and the like, as well as agricultural and environmental applications. In addition, biodegradable superabsorbents of the invention can be prepared.

Abstract: The present invention relates to polymerizable compounds, to processes and intermediates for the preparation thereof, to liquid-crystal (LC) media comprising them, and to the use of the polymerizable compounds and LC media for optical, electro-optical and electronic purposes, in particular in LC displays, especially in LC displays of the PS (“polymer sustained”) or PSA (“polymer sustained alignment”) type.

Abstract: The invention relates to a liquid-crystalline medium which comprises at least one compound of the formula I, in which R1, R1*, L1, L2 and L3 have the meanings indicated in Claim 1, and to the use thereof for an active-matrix display, in particular based on the VA, PSA, PS-VA, PA-VA, PALC, FFS, PS-FFS, IPS or PS-IPS effect. The invention furthermore also relates to compounds of the formula I.

Abstract: The compound represented by formula (1). For example, the rings A1, A2, A3 and A4 are 1,4-phenylene, Z1 and Z2 are alkylene having 1 to 10 carbons in which at least one —CH2— may be replaced by —O— or —CH?CH—; L1, L2 and L3 are a single bond, —COO— or —CH?CH—; G1 and G2 area single bond or —O—; s, t and u are 0 or 1; and P1 and P2 is the group (P-1), the group (P-2) or the group (P-3). M1 and M2 are hydrogen or methyl.

Abstract: The present invention relates to compounds containing at least one C—C triple bond within a chain of at least 3 ring systems which have positive dielectric anisotropy, to the use thereof for high-frequency components, to liquid-crystalline media comprising the compounds, and to high-frequency components, in particular antennae, especially for the gigahertz region, comprising these media. The liquid-crystalline media serve, for example, for the phase shifting of microwaves for tuneable ‘phased-array’ antennae.

Abstract: A liquid crystal display includes a first substrate, a second substrate, and a liquid crystal layer. The first substrate includes a first insulating substrate, in which a pixel area is defined, a gate line formed on the first insulating substrate, a data line crossing the gate line, and a thin film transistor connected to the gate line and the data line. The second substrate is opposite to the first substrate. The liquid crystal layer is interposed between the first and second substrates and includes a liquid crystal composition with a nematic-isotropic phase transition temperature (Tni) of 79° C. or above.

Abstract: The present invention relates to a liquid-crystal medium which comprises a component A which consists of one or more compounds of the formula IA in which the parameters have the respective meanings given in the claims or in the text, and to the corresponding, novel mesogenic compounds and to the preparation thereof. The present invention likewise relates to the use of these liquid-crystal media, in particular in components for high-frequency technology, and to components of this type which contain the media according to the invention, and to the production and use of these components. The components according to the invention are suitable, in particular, for phase shifters in the microwave and millimetre wave region, for microwave and millimetre wave array antennae and very particularly for so-called tunable “reflectarrays”.

Abstract: At least one lanthanide complex for optical marking of products, compositions for optical marking of products, and an optical marking method including an application step of these compositions.

Abstract: A method of recovering aqueous N-Methylmorpholine-N-Oxide solution used in production of Lyocell fiber comprises following steps. Bleach means for decoloring coloration in aqueous NMMO solution via alternate blow-mixing adsorption mode and static suspending adsorption mode reiteration. Filtration means for purifying the activated carbon powder and impurities by two filtering stages of first coarse filtering stage and second fine filtering stage. Concentration means for intensifying aqueous NMMO solution to obtain a condensed aqueous solution without NMMO solvent and a concentrated aqueous solution with NMMO solvent respectively by a sequential multi-stage evaporating system. Refinement means for purifying aqueous NMMO solution with promoting purity of concentrated aqueous solution to obtain required recovered aqueous solution by adding suitable agents in the redox reactions involved.

Abstract: Reactive diluent fluid (22) is introduced into a stream of synthesis gas (or “syngas”) produced in a heat-generating unit such as a partial oxidation (“POX”) reactor (12) to cool the syngas and form a mixture of cooled syngas and reactive diluent fluid. Carbon dioxide and/or carbon components and/or hydrogen in the mixture of cooled syngas and reactive diluent fluid is reacted (26) with at least a portion of the reactive diluent fluid in the mixture to produce carbon monoxide-enriched and/or solid carbon depleted syngas which is fed into a secondary reformer unit (30) such as an enhanced heat transfer reformer in a heat exchange reformer process. An advantage of the invention is that problems with the mechanical integrity of the secondary unit arising from the high temperature of the syngas from the heat-generating unit are avoided.

Abstract: A process for the production of syngas comprising the steps of: forming a gaseous reactant mixture comprising a hydrocarbon fuel; reforming the reactant mixture in a reforming reactor at a target reforming temperature to produce hydrogen gas, the reactant mixture is heated by a heat transfer fluid that, prior to heating the reactant mixture, passes through a concentrated solar energy receiver. The volumetric ratio of heat transfer fluid between the receiver and the reforming reactor to the heat transfer fluid in the receiver is less than fifty.

Abstract: This invention relates to gasification of high ash bituminous coals that have high ash fusion temperatures. The ash content can be in 15 to 45 weight percent range and ash fusion temperatures can be in 1150° C. to 1500° C. range as well as in excess of 1500° C. In a preferred embodiment, such coals are dealt with a two stage gasification process—a relatively low temperature primary gasification step in a circulating fluidized bed transport gasifier followed by a high temperature partial oxidation step of residual char carbon and small quantities of tar. The system to process such coals further includes an internally circulating fluidized bed to effectively cool the high temperature syngas with the aid of an inert media and without the syngas contacting the heat transfer surfaces. A cyclone downstream of the syngas cooler, operating at relatively low temperatures, effectively reduces loading to a dust filtration unit.

Abstract: A marker system for applying to surfaces of items, articles, goods, vehicles and/or premises, said marker system comprising: a marker comprising a temperature resilient medium having a predefined carbonisation temperature capable of securing the marker system onto a surface; wherein the medium contains an inorganic matrix having a predefined fusing point lower than the predefined carbonisation temperature of the medium; such that when the marker system is subjected to temperatures above the predefined carbonisation temperature of the medium, the inorganic matrix fuses to the marker to form an adhesive protective layer thereby securing the marker onto said surface. A composition comprising the marker system. An item, an article, a good, a vehicle and/or premises comprising a surface impregnated with the marker system.

Abstract: A polyaniline composite including substituted or unsubstituted polyaniline molecules and a proton donar, the polyaniline molecules being doped with the proton donar, the composite having a chlorine content of 0.6 wt % or less and the composite satisfying the following formula (1): P10000/PALL?0.15??(1) wherein P10000 is the total sum of the weights of the polyaniline molecules contained in the polyaniline composite having a molecular weight of 10000 or less; and PALL is the total sum of the weights of all polyaniline molecules contained in the polyaniline composite.

Abstract: The invention relates to novel dinaphtho[2,3-a:2?,3?-h]phenazine conmpounds, to methods for their preparation and intermediates used therein, formulations comprising them, the use of these compounds and formulations as semiconductor material in organic electronic (OE) devices, and OE devices comprising these compounds and formulations.

Abstract: An intermediate transfer member that includes a fluorinated polyamideimide polymer, and an optional conductive component.

Abstract: An intermediate transfer member that includes a sulfonated poly(ether ether ketone) polymer, an optional conductive component, an optional polymer, and an optional release additive.

Abstract: There is provided a conductive ink composition for offset or reverse-offset printing, the conductive ink composition including a high boiling point solvent having a boiling point of 180 to 250° C. and a dispersion assistant solvent having a boiling point of 50 to 150° C., together with metal particles and tert-butyl alcohol as a main solvent.

Abstract: A conductive paste includes a conductive powder containing at least one of copper and nickel as a main component, a glass frit, and an organic vehicle, wherein the glass frit is a tellurium-based glass frit that essentially does not contain any lead component and contains tellurium as a network former in an amount of 35 to 70 mol % in terms of oxide, the tellurium-based glass frit containing silver as an essential component. The above conductive paste can provide favorable characteristics and favorably be used in the formation of light-receiving surface electrodes of a solar cell element even when the conductive paste includes one or more of copper and nickel as its conductive component.

Abstract: The present invention provides a metal paste composition which can obtain the calcined bodies having low volume resistivity in a wiring substrate after calcining. More specifically, the present invention provides a metal paste composition comprising a metal, an aliphatic polycarbonate, and an organic solvent.

Abstract: A fabrication method of thermoelectric materials using core-shell structured nano-particles and thermoelectric materials fabricated by the same are provided. The method includes preparing core-shell structured nano-particles having thermoelectric elements coated on the surface thereof (step 1); adding and mixing the prepared core-shell structured nano-particles of step 1, bismuth (Bi) salts, tellurium (Te) salts and a surfactant in a solvent (step 2); adding and dispersing a reducing agent in the mixture of step (step 3); and heating the mixture of step 3 in which reducing agent is added and dispersed (step 4). According to the present invention, thermoelectric materials, nano-phase is homogeneously dispersed inside of thermoelectric grain boundary, can be fabricated and if the fabricated materials are used after sintering and bulking, the thermoelectric materials are maintained in a state that the nano-particles remain in dispersed phase even after sintering.

Abstract: A high heat resistant, low elastic modulus and fire resistant resin and its compounds are provided. The resin mainly comprises a thermo-hardening resin, a chain extender and a softening agent. Wherein the thermo-hardening resin amounts to 70˜92 wt % in the composite formula, the chain extender amounts to 3˜20 wt % in the composite formula and the softening agent amounts to 5˜10 wt % in the composite formula. The compound composed of 35˜50 wt % of the resin and 50˜65 wt % of a thermal conductive powder has a high thermal conductivity and a low elastic modulus, and is high heat resistant and fire resistant. The compound composed of 60˜95 wt % of the resin and 5˜40 wt % of a multifunctional polyester has a low dielectric constant and a low elastic modulus, and is high heat resistant and fire resistant.

Abstract: An apparatus for applying tension to flexible items, including wire, barbed wire, cable, or rope, are described herein. A stationary clamping member is fixedly attached to a first end of a guide bar, extending outwardly therefrom, while a non-stationary clamping member is movably mounted to the guide bar. The first flexible item is secured in the stationary clamping member, while the second flexible item is secured in the non-stationary clamping member. A tensioning assembly, such as a ratchet-like assembly engaging notches in the guide bar, is adapted to move the non-stationary clamping member away from the stationary clamping member, thereby tensioning one or both flexible items. Once the flexible items have been tensioned, they can be connected together while under tension.

Abstract: A wire manipulator capable of accurately transferring an object to a desired position on a plane using a strand of wire is provided. The wire manipulator includes a frame having an inner space formed therein, three or more wire modules spaced apart from and coupled to the frame, a moving object coupled to the wire modules, and a control unit configured to control the wire modules. Here the wire module may include a wire coupled to the moving object, and a motor device configured to be able to wind or unwind the wire.

Abstract: A ratchet for use with a cord includes a pair of opposed tear drop shaped members defining a one piece housing for rotatably supporting a one piece ratchet spool, for supporting a pivotally mounted thumb release and for supporting an angularly displacable hook. Opposed circular cavities are disposed within the members to rotatably support corresponding bosses extending from opposed sides of the spool. A plurality of opposed interleaved non-radial ribs extend from opposed surfaces of the spool to frictionally grip a cord partially extending about the spool. A pair of wheels forming the spool are interlocked with and secured to one another through a key and keyway.

Abstract: A highway guardrail post comprises an elongated one-piece roll-formed metal body including a front wall defining an attachment face, a pair of opposing side walls orthogonal to the front wall, a first pair of inverted corners respectively connecting the pair of side walls to the front wall, and a second pair of inverted corners respectively extending from the pair of side walls and terminating in a pair of spaced rear edges to define a rear access opening opposite the front wall. The guardrail posts may be manufactured by roll-forming a metal sheet or coil and cutting the roll-formed metal sheet or coil into lengths.

Abstract: A barrier system includes at least first and second reinforced concrete posts, each concrete post including at least one conduit formed therethrough having first and second ends and a strain relief sector formed therein at the first end of the conduit. At least one tension cable extends between the posts. The tension cable extends through the conduit of each post and has a cable end secured to the post at the second end of each post's conduit.

Abstract: A railing support post with threaded holes or receivers for receiving threaded hardware, such as might be used for tensioned cable railing. A decorative sleeve or post cover may be used to at least partially enclose the railing support post. The railing support post may be manufactured, for example, by providing an elongated member of a prescribed length, drilling a plurality of holes spaced along the length of the elongated member, and tapping the plurality of holes to form a plurality of threaded receivers. The threaded receivers are configured to receiver rail fittings or other fittings.

Abstract: One or more posts of a railing system are held securely in place by a hidden tensioning cable that extends through a cavity of the post along a longitudinal axis and is tensioned to securely fasten the post securely to a surface of a structure. Placement of the tensioning cable through the cavity allows cable receivers to be placed at desired spacing in one or more receiver channels of the post, the cable receivers operable to receive cable rails of the railing system. The receiver channels are oriented transverse the longitudinal axis of the post and are each configured to receive a receiver in to which a cable assembly may be placed. This abstract is not to be considered limiting.

Abstract: Semiconductor memory device having a stacking structure including resistor switch based logic circuits. The semiconductor memory device includes a first conductive line that includes a first line portion and a second line portion, wherein the first line portion and the second line portion are electrically separated from each other by an intermediate region disposed between the first and second line portions, a first variable resistance material film that is connected to the first line portion and stores data, and a second variable resistance material film that controls an electrical connection between the first line portion and the second line portion.

Abstract: A variable resistance nonvolatile storage device which includes (i) a semiconductor substrate, (ii) a variable resistance element having: lower and upper electrodes; and a variable resistance layer whose resistance value reversibly varies based on voltage signals each of which has a different polarity and is applied between the electrodes, and (iii) a MOS transistor formed on the substrate, wherein the variable resistance layer includes: oxygen-deficient transition metal oxide layers having compositions MOx and MOy (where x<y) and in contact with the electrodes respectively, a diffusion layer region is connected with the lower electrode to form a memory cell, the region serving as a drain upon application of a voltage signal which causes a resistance change to high resistance state in the variable resistance layer.

Abstract: A memory element capable of simultaneously satisfying the number of repeating operation times and a low-voltage operation characteristic which are in a tradeoff relation is provided. The memory element has a high-resistivity layer and an ion source layer between a bottom electrode and a top electrode. The high-resistivity layer is made of an oxide containing Te. Any of elements other than Te such as Al, Zr, Ta, Hf, Si, Ge, Ni, Co, Cu, and Au may be added. In the case of adding Al to Te and also adding Cu and Zr, the composition ratio of the high-resistivity layer is preferably adjusted in the ranges of 30?Te?100 atomic %, 0?Al ?70 atomic %, and 0?Cu+Zr?36 atomic % except for oxygen. The ion source layer is made of at least one kind of metal elements and at least one kind of chalcogen elements of Te, S, and Se.

Abstract: An organic molecular memory of an embodiment includes a first conductive layer, a second conductive layer, and an organic molecular layer interposed between the first conductive layer and the second conductive layer, the organic molecular layer including variable-resistance molecular chains or charge-storage molecular chains, the variable-resistance molecular chains or the charge-storage molecular chains having electron-withdrawing substituents.

Abstract: Thermal isolation in memory cells is described herein. A number of embodiments include a storage element, a selector device formed in series with the storage element, and an electrode between the storage element and the selector device, wherein the electrode comprises an electrode material having a thermal conductivity of less than 0.15 Watts per Kelvin-centimeter (W/K-cm).

Abstract: A nonvolatile memory device has a memory cell including a resistance change layer, a first electrode, and a second electrode. The resistance change layer switches between high and low resistance states due to the transfer of metal ions from the first electrode in response to voltages applied between the electrodes. The first electrode is formed on a first side of the resistance change layer, and provides metal ions. The second electrode is formed on a second side of the resistance change layer. A memory cell region is formed between the first electrode and the second electrode with the resistance change layer. The memory device also includes a high permittivity layer with a higher dielectric constant than the resistance change layer.

Abstract: The present invention disclosure provides a super-long semiconductor nanowire structure. The super-long semiconductor nanowire structure is intermittently widened to prevent fractures in the super-long semiconductor nanowire structure. At the same time, the present invention further provides a method of making a super-long semiconductor nanowire structure. The method forms an intermittently widened super-long semiconductor nanowire structure using photolithography and etching. Because the super-long semiconductor nanowire structure is intermittently widened, fracturing of the super-long semiconductor nanowire structure during etching can be avoided, making it easier to form a super-long and ultra-thin semiconductor nanowire structure.

Abstract: The present application relates to a method for dispersing quantum dots (QDs) or quantum wires in zeolite, to zeolite containing quantum dots or quantum wires dispersed by the method, and to a method for stabilizing quantum dots or quantum wires in zeolite.

Abstract: A cylindrical-shaped nanotube FET may be manufactured on silicon (Si) substrates as a ring etched into a gate stack and filled with semiconductor material. An inner gate electrode couples to a region of the gate stack inside the inner circumference of the ring. An outer gate electrode couples to a region of the gate stack outside the outer circumference of the ring. The multi-gate cylindrical-shaped nanotube FET operates in volume inversion for ring widths below 15 nanometers. The cylindrical-shaped nanotube FET demonstrates better short channel effect (SCE) mitigation and higher performance (Ion/Ioff) than conventional transistor devices. The cylindrical-shaped nanotube FET may also be manufactured with higher yields and cheaper costs than conventional transistors.

Abstract: Improved quantum efficiency of multiple quantum wells. In accordance with an embodiment of the present invention, an article of manufacture includes a p side for supplying holes and an n side for supplying electrons. The article of manufacture also includes a plurality of quantum well periods between the p side and the n side, each of the quantum well periods includes a quantum well layer and a barrier layer, with each of the barrier layers having a barrier height. The plurality of quantum well periods include different barrier heights.

Abstract: A semiconductor light-emitting device includes a contact layer. The contact layer has the composition ratio of Al elements which varies gradually therein. A region formed by an Al element in the contact layer of the semiconductor light-emitting device may improve light extraction efficiency of the light emitted from an active layer and facilitate a formation of the reflective electrode.

Abstract: A method of fabricating a light emitting device, comprising: providing a substrate; forming an undoped semiconductor layer on the substrate; forming a patterned metal layer on the undoped semiconductor layer; using the patterned metal layer as a mask to etch the undoped semiconductor layer and forming a plurality of nanorods on the substrate; and forming an light emitting stack on the plurality of nanorods to form a plurality of voids between the light emitting stack and the plurality of nanorods.

Abstract: A high luminance semiconductor light emitting device including a metallic reflecting layer formed using a non-transparent semiconductor substrate is provided. The device includes a GaAs substrate; a metal layer disposed on the GaAs substrate; and a light emitting diode structure. The light emitting diode structure includes a patterned metal contact layer and a patterned insulating layer disposed on the metal layer, a p type cladding layer disposed on the patterned metal contact layer and the patterned insulating layer, a multi-quantum well layer disposed on the p type cladding layer, an n type cladding layer disposed on the multi-quantum well layer, and a window layer disposed on the n type cladding layer. The GaAs substrate and the light emitting diode structure are bonded by using the metal layer.

Abstract: This application relates to graphene based heterostructures and methods of making graphene based heterostructures. The graphene heterostructures comprise: i) a first encapsulation layer; ii) a second encapsulation layer; and iii) a graphene layer. The heterostructures find application in electronic devices.