Abstract: A pedestrian and vehicle barrier system is provided for attaching handrails onto vehicle guardrail barriers. The handrail attachment does not to unduly interfere with energy absorbing and/or dissipating features of vehicle guardrail barriers. The system comprises an elongate support post member with a slot at a bottom end, to be slid telescopically over a guardrail support post, and sleeved such that it is substantially restricted from moving laterally and/or rotating relative to the guardrail support post. Movement may be further restricted by fasteners. Handrails or other auxiliary barriers may be attached to a top end of the support post member.

Abstract: A fencing system that includes a plurality of fence rails extending between two fence posts. The fence rails may comprise a foamed material core that is enclosed by a weather resistant capping material. One or more hollow passageways may be formed in each of the fence rails to both reduce weight and to receive a metal reinforcing member. A plurality of fence pickets may be installed onto the fence rails using power driven fasteners, such as ring shank nails or staples.

Abstract: A fencing system that includes a plurality of fence rails extending between two fence posts. The fence rails may comprise a foamed material core that is enclosed by a weather resistant capping material. One or more hollow passageways may be formed in each of the fence rails to both reduce weight and to receive a metal reinforcing member. A plurality of fence pickets may be installed onto the fence rails using power driven fasteners, such as ring shank nails or staples.

Abstract: A retrofit panel for attachment to a land barrier comprising a base, where the base includes a front face and a back face; a set of reinforced edges surrounding the base, where the set reinforced edges include a pair of side edges, a top edge and a bottom edge; a plurality of attachment means to fasten the set of reinforced edges to the land barrier; and a veneer on the front face of the base, where the veneer has the appearance of a land barrier. The retrofit panel provides the appearance of a fence or brick wall once aligned next to each other along the entire barrier.

Abstract: The present invention is directed to a fence or enclosure 165 and related methods for making a fence panel 65 and for connecting the panel 65 to other panels 65 to form a modular type fence 165. The invention preferably includes a generally planar section 70 of fencing material formed from spaced-apart wires 10, 15, and at least two non-parallel stiffening portions 80, 85, deforming the fence section 65 from the aforementioned generally planar configuration 70.

Abstract: A variable resistance nonvolatile memory element includes: first and second electrode layers; a first variable resistance layer between the first and second electrode layers; and a second variable resistance layer between the second electrode layer and the first variable resistance layer and having a higher resistance value than the first variable resistance layer. When viewed in a direction perpendicular to the major surface of the second variable resistance layer, an outline of the second variable resistance layer is located inwardly of the outline of any one of the second electrode layer and the first variable resistance layer, and an outline of a face of the second variable resistance layer, the face being in contact with the first variable resistance layer is located inwardly of an outline of a face of the first variable resistance layer, the face being in contact with the second variable resistance layer.

Abstract: A conductive bridge resistive memory device is provided, comprising a first electrode, a memory layer electrically coupled to the first electrode, an ion-supplying layer containing a source of ions of a first metal element capable of diffusion into and out of the memory layer, a semiconductor layer disposed between the memory layer and the ion-supplying layer, and a second electrode electrically coupled to the ion-supplying layer.

Abstract: The present disclosure provides a resistive random access memory (RRAM) cells and methods of making the same. The RRAM cell includes a transistor and an RRAM structure. The RRAM structure includes a bottom electrode having a via portion and a top portion, a resistive material layer on the bottom electrode having a width that is same as a width of the top portion of the bottom electrode; a capping layer over the bottom electrode; a spacer surrounding the capping layer; and, a top electrode on the capping layer having a smaller width than the resistive material layer. The RRAM cell further includes a conductive material connecting the top electrode of the RRAM structure to a metal layer.

Abstract: A self-rectified device is provided, comprising a bottom electrode, a patterned dielectric layer with a contact hole formed on the bottom electrode, a memory formed at the bottom electrode and substantially aligned with the contact hole, and a top electrode formed on the bottom electrode and filling into the contact hole to contact with the memory, wherein the top electrode comprises a N+ type semiconductor material or a P+ type semiconductor material, and the memory and the top electrode produce a self-rectified property.

Abstract: In one aspect, a method of fabricating a nanowire FET device includes the following steps. A layer of III-V semiconductor material is formed on an SOI layer of an SOI wafer. Fins are etched into the III-V material and SOI layer. One or more dummy gates are formed over a portion of the fins that serves as a channel region of the device. A gap filler material is deposited onto the wafer. The dummy gates are removed selective to the gap filler material, forming trenches in the gap filler material. The SOI layer is removed from portions of the fins within the trenches thereby forming suspended nanowire channels in the channel regions of the device. The trenches are filled with at least one gate material to form one or more replacement gates surrounding the nanowire channels in a gate-all-around configuration.

Abstract: Semiconductor device assemblies having solid-state transducer (SST) devices and associated semiconductor devices, systems, and are disclosed herein. In one embodiment, a method of forming a semiconductor device assembly includes forming a support substrate, a transfer structure, and a plurality semiconductor structures between the support substrate and the transfer structure. The method further includes removing the support substrate to expose an active surface of the individual semiconductor structures and a trench between the individual semiconductor structures. The semiconductor structures can be attached to a carrier substrate that is optically transmissive such that the active surface can emit and/or receive the light through the carrier substrate. The individual semiconductor structures can then be processed on the carrier substrate with the support substrate removed.

Abstract: A semiconductor light emitting device includes a substrate; a base layer made of a first conductivity-type semiconductor and disposed on the substrate; a plurality of nanoscale light emitting units disposed in a region of an upper surface of the base layer and including a first conductivity-type nano-semiconductor layer protruding from the upper surface of the base layer, a nano-active layer disposed on the first conductivity-type nano-semiconductor layer, and a second conductivity-type nano-semiconductor layer disposed on the nano-active layer; and a light emitting laminate disposed in a different region of the upper surface of the base layer and having a laminated active layer.

Abstract: Disclosed is a semiconductor light emitting device including a first to third conductive semiconductor layers which have an n-type dopant, an active layer, and a fourth and fifth conductive semiconductor layers which have a p-type dopant. The first and third conductive semiconductor layers are a GaN semiconductor, and the second conductive semiconductor layer is an InGaN-based semiconductor layer. The fourth conductive semiconductor layer is formed of an AlGaN semiconductor and the fifth conductive semiconductor layer is formed of a GaN-based semiconductor layer. The active layer includes plurality of quantum barrier layers and plurality of quantum well layers and includes a cycle of 2 to 10. The plurality of quantum well layers include an InGaN semiconductor and at least one of the plurality of quantum barrier layers includes a GaN-based semiconductor, and at least two of the plurality barrier layers has a thickness of about 50 ? to about 300 ?.

Abstract: In the nitride semiconductor device of the present invention, an active layer 12 is sandwiched between a p-type nitride semiconductor layer 11 and an n-type nitride semiconductor layer 13. The active layer 12 has, at least, a barrier layer 2a having an n-type impurity; a well layer 1a made of a nitride semiconductor that includes In; and a barrier layer 2c that has a p-type impurity, or that has been grown without being doped. An appropriate injection of carriers into the active layer 12 becomes possible by arranging the barrier layer 2c nearest to the p-type layer side.

Abstract: Three dimensional quantum well transistors and fabrication methods are provided. A quantum well layer, a barrier layer, and a gate structure can be sequentially formed on an insulating surface of a fin part. The gate structure can be formed over the barrier layer and across the fin part. The QW layer and the barrier layer can form a hetero-junction of the transistor. A recess can be formed in the fin part on both sides of the gate structure to suspend a sidewall spacer. A source and a drain can be formed by growing an epitaxial material in the recess and the sidewall spacer formed on both sidewalls of the gate electrode can be positioned on surface of the source and the drain.

Abstract: Arrangements of pixel components that allow for full-color devices, while using emissive devices that emit at not more than two colors, and/or a limited number of color altering layers, are provided. Devices disclosed herein also may be achieved using simplified fabrication techniques compared to conventional side-by-side arrangements, because fewer masking steps may be required.

Abstract: An organic light emitting diode display includes an array of pixels on a substrate. Each pixel includes three sub-pixels that emits light of different wavelengths from each other. The display includes thin film transistors (TFTs) for the sub-pixels on the substrate. Each TFT is separated from each other by a first pixel defining layer. The display also includes a first pixel electrode connected to the TFT for each sub-pixel, a tuning layer on the first pixel electrode, where the tuning layer has a thickness for each sub-pixel such that each sub-pixel has a optical-path length different from another sub-pixel. The display further includes an organic light emitting layer disposed over the tuning layer, and a second pixel defining layer covering a first end of the tuning layer and a second end of the tuning layer opposing to the first end of the tuning layer, and exposing the light emitting layer.

Abstract: The present invention provides a diode and display panel, which includes: cathode and anode; wherein, cathode and anode being disposed relatively. Electron transport layer is disposed between cathode and anode. Electron transport layer is doped with alkali metal compounds, which is a material used to form electron injection layers. Alkali metal compounds comprise at least one of the materials from lithium metaborate, potassium silicate, lithium tetra (8-hydroxyquinolinato) boron, and alkali metal acetate. The present invention improves the light-emitting performance, lowers operating voltage, simplifies the manufacturing process, and increases the yield rate; as a result, to reduce the cost of diodes.

Abstract: A mask unit for depositing a thin layer in a display device. The mask unit includes: a bead mask support which includes a plate; and a bead mask which is placed on the bead mask support.

Abstract: Disclosed are an OLED display structure and an OLED display device having the OLED display structure. The OLED display structure comprises: a substrate (10), and an OLED pixel layer (20), a beam splitting layer (5) and a circular polarizer layer (6) which are formed on the substrate (10) in sequence; the beam splitting layer (5) is adapted to divide a light beam into o-light and e-light, and to convert the o-light and the e-light into circularly polarized light which has the same polarization state as the circular polarizer layer (6); the circular polarizer layer (6) is adapted to allow passage of the circularly polarized light which has the same polarization state as it. With the display structure, the light transmittance is improved, and the pixel current of the OLED pixel layer (20) is reduced, and thereby energy is saved.

Abstract: An organic light-emitting transistor may include a mesh-type source electrode having a plurality of apertures in an array pattern. The mesh-type source electrode may be located between the gate electrode and the drain electrode. The organic light-emitting transistor adopting a mesh-type source electrode may show quasi-surface emission characteristics similar to that of the organic light-emitting diode. Moreover, an aperture ratio, brightness, and light emission efficiency of the organic light-emitting transistor may be superior to those of an organic light-emitting diode. Another advantage is that the production cost may be reduced since an additional driving element such as a thin-film-transistor is not needed.

Abstract: The invention relates to a fabrication apparatus for fabricating a patterned layer (18) on a substrate (14). Protective material (17) is applied in second regions on the substrate (14) and liquid layer material (18) is then printed in first regions being different to the second regions on the substrate (14). The layer material (18) is dried by heating the layer material (18) to a drying temperature being smaller than a melting temperature of the protective material (17), before removing the protective material (17) from the substrate (14) by using a removing temperature being larger than the melting temperature of the protective material (17). A patterned layer (18) can therefore be produced, without using, for example, a costly photolithography process, and because of the use of the protective material (17) the layer material (18) is present in the desired first regions only and not in the second regions. This improves the quality of the patterned layer, which may be used for producing an OLED.

Abstract: Provided are a novel compound and an organic electronic device (OED) including the same. The novel compound has better hole injection and hole transport properties than a conventional material, and thus may enhance thermal stability and efficiency when used as a material for a hole injection or hole transport layer of the OED.

Abstract: An organic electroluminescent element which has a substrate, a pair of electrodes disposed on this substrate and composed of an anode and a cathode, and at least one organic layer disposed between these electrodes and including a light-emitting layer, and in which a compound expressed by General Formula 1-1 is contained in at least one layer of the aforementioned light-emitting layer(s) exhibits high luminous efficiency, excellent blue color purity, and little change in chromaticity accompanying drive deterioration.

Abstract: An organic light emitting diode includes a substrate and an organic layer sequence, which generates electromagnetic radiation during operation. The organic layer sequence is arranged in a central region of the substrate A metallization is arranged in an edge region of the substrate and is designed for making electrical contact with the organic layer sequence. A separately produced metallic contact structure is cohesively and electrically conductively connected to the metallization by a joining process based on ultrasonic technology.

Abstract: The invention relates to an organic electron component having a first electrode, a second electrode, a channel layer comprising an organic semiconducting material and a dopant material.

Abstract: An organic light-emitting element (10) including: an anode layer (12) formed on a substrate (11); a first through-hole portion (16) formed to pass through the anode layer (12); a dielectric layer (13) formed to cover an upper surface of the anode layer (12) and an inner surface of the first through-hole portion (16); plural recessed portions (18) formed at an upper surface of the dielectric layer (13) not to pass through the dielectric layer (13); a second through-hole portion (17) formed to pass through the anode layer (12) and the dielectric layer (13); an organic compound layer (14) that includes a light emitting layer formed to cover at least the upper surface of the dielectric layer (13), an inner surface of each of the recessed portions (18) and an inner surface of the second through-hole portion (17); and a cathode layer (15) formed on the organic compound layer (14).

Abstract: An organic light emitting display device includes a first electrode, a second electrode facing the first electrode, an organic light emitting layer disposed between the first and second electrodes, a first auxiliary structure and a second auxiliary structure both of which are disposed between the first and second electrodes. The first electrode is disposed on a substrate having a first sub-pixel region, a second sub-pixel region and a third sub-pixel region. The organic light emitting layer includes a first organic light emitting layer, a second organic light emitting layer and a third organic light emitting layer. The first auxiliary structure includes a first doping pattern, a first resonance auxiliary pattern, a second doping pattern and a second resonance auxiliary pattern. The second auxiliary structure includes a third doping pattern, a third resonance auxiliary pattern, a fourth doping pattern and a fourth resonance auxiliary pattern.

Abstract: A compound for an organic optoelectronic device represented by Chemical Formula 1: wherein groups X1 to X8, Y1, Y2, L1, L2, Ar1, Ar2, and variables m1, m2, n1, and n2 are described in the specification.

Abstract: An electroluminescent device, comprising: a substrate; a first electrode and a second electrode disposed on the substrate; and an electroluminescent layer sandwiched between the first electrode and the second electrode, wherein at least one of the first and second electrodes is configured to have a grating structure; and wherein the grating structure has a grating period within a range of 0.9˜1.1 times of a wavelength of a light wave generated in the electroluminescent layer.

Abstract: A first device comprising a first organic light emitting device (OLED) is described. The first OLED includes an anode, a cathode, and an emissive layer disposed between the anode and the cathode. The emissive layer includes a phosphorescent emissive dopant and a host material. The host material includes inorganic nanocrystals where (i) at least 50% of ligands bonded to said nanocrystals are compact ligands, (ii) an average interparticle distance between adjacent nanoparticles is ?1 nm, or (iii) both. Also described are a method of making the emissive layer and a composition that includes the phosphorescent emissive dopant with the host materials that include the electronically-coupled inorganic nanocrystal host material.

Abstract: A display device includes contact holes opened in an insulating film outside of a display area in which pixels are arranged, and having a conductive film exposed in bottom portions, a first metal film formed to cover the contact holes and come in contact with the conductive film of the bottom portions, and a transparent conductive film formed on the first metal film.

Abstract: Provided is an organic light emitting diode which can easily control color coordinates and improve a device's life span characteristic by using an auxiliary dopant having a higher band gap energy than that of a host, and preferably, having an absolute value of the highest occupied molecular orbital energy level equal to or higher than that of the host, or an absolute value of the lowest unoccupied molecular orbital energy level equal to or lower than that of the host. The organic light emitting diode includes a first electrode, an emission layer disposed on the first electrode and including a host, an emitting dopant and an auxiliary dopant, and a second electrode disposed on the emission layer. Here, the auxiliary dopant has a higher band gap energy than the host. A method of fabricating the organic light emitting diode is provided.

Abstract: An organic light emitting display (OLED) is disclosed. The OLED includes a storage capacitor formed in a first region of the substrate, a thin film transistor formed in a second region of the substrate, a first data line capacitor formed in a third region of the substrate, an organic light emitting diode formed on the storage capacitor and the thin film transistor, and a second data line capacitor formed on the data line capacitor.

Abstract: An embodiment of the present memory cell a first layer of a chosen conductivity type, and a second layer which includes ferroelectric semiconductor material of the opposite conductivity type, the layers forming a pn junction. The first layer may be a conjugated semiconductor polymer, or may also be of ferroelectric semiconductor material. The layers are provided between first and electrodes. In another embodiment, a single layer of a composite of conjugated semiconductor polymer and ferroelectric semiconductor material is provided between first and second electrodes. The various embodiments may be part of a memory array.

Abstract: A patterning slit sheet assembly for performing a deposition process to form a thin film on a substrate in a desired fine pattern. The patterning slit sheet assembly includes a patterning slit sheet having a plurality of slits, a frame combined with the patterning slit sheet to support the patterning slit sheet, and a support unit including an upper member that is allowed to be moved or fixed to support the patterning slit sheet when a gravitational force is applied to the patterning slit sheet and a lower member disposed more apart from the patterning slit sheet than the upper member, wherein the upper member is fixed on the lower member.

Abstract: It is an object of the present invention to provide an organic light-emitting device which can emit white light by easily controlling dopant concentrations. The organic light-emitting device has a first electrode (112) and second electrode (111) which hold a light-emitting layer (113) in-between, wherein the light-emitting layer contains a host material (104), red-light-emitting dopant (105), green-light-emitting dopant (106) and blue-light-emitting dopant (107), the red-light-emitting dopant containing a first functional group for transferring the dopant toward the first electrode and the green-light-emitting dopant containing a second functional group for transferring the dopant toward the second electrode.

Abstract: Color purity of a light emitting element is improved without an adverse effect such as reduction in voltage and luminance efficiency. The light emitting element has a light emitting laminated body including a light emitting layer between a pair of electrodes. A buffer layer is provided to be in contact with at least one of the electrodes. One of the electrodes is an electrode having high reflectance and the other is a translucent electrode. By employing a translucent electrode, light can be transmitted and reflected. An optical distance between the electrodes is adjusted in accordance with a thickness of the buffer layer, and accordingly, light can be resonated between the electrodes. The buffer layer is made of a composite material including an organic compound and a metal compound; therefore, voltage and luminance efficiency of the light emitting element is not affected even if a distance between the electrodes becomes long.

Abstract: A photovoltaic device comprising a first electrode, a second electrode, an active layer between the two electrodes and an interlayer between the active layer and at least one of the electrodes. The interlayer is a conjugated polymer which is preferably in the amorphous phase. The device shows significantly improved voltage-current characteristics compared to prior art devices and is particularly suitable as a low light level detector.

Abstract: Novel compounds comprising heteroleptic iridium complexes are provided. The compounds have a particular combination of ligands which includes a single pyridyl dibenzo-substituted ligand. The compounds may be used in organic light emitting devices, particularly as emitting dopants, to provide devices having improved efficiency, lifetime, and manufacturing.

Abstract: Provided is an organic electroluminescent device (organic EL device) that is improved in luminous efficiency, sufficiently secures driving stability, and has a simple construction. The organic electroluminescent device includes an organic layer including a light-emitting layer between an anode and cathode laminated on a substrate, and at least one layer of the organic layer contains a carbazole compound represented by the following formula (1). It is advantageous to incorporate the carbazole compound as a host material into the light-emitting layer. In the formula (1), A represents a direct bond or an n-valent group, E represents oxygen or sulfur, and n represents an integer of 2 to 4.

Abstract: Provided are a material for an organic electroluminescent element formed of a silicon-containing four-membered ring compound, and an organic electroluminescent element using the material. The material for an organic electroluminescent element is formed of a compound represented by the following formula (1) and is used for, for example, a light-emitting layer containing a phosphorescent light-emitting dopant in an organic electroluminescent element. In the formula, X represents nitrogen or phosphorus, L's each represent an (n+1)-valent aromatic hydrocarbon group or aromatic heterocyclic group, and at least one of the L's represents an aromatic heterocyclic group. A1 to A6 each represent an alkyl group, a cycloalkyl group, an alkenyl group, an alkynyl group, an aromatic hydrocarbon group, an aromatic heterocyclic group, or an amino group, and n represents an integer of 0 to 3.

Abstract: An organic light-emitting panel includes a reflective electrode, a functional layer, having a single or multi-layer structure, located on the reflective electrode, an organic light-emitting layer located on the functional layer, a transparent electrode located above the organic light-emitting layer, a low refractive index layer located on the transparent electrode, and a first thin-film sealing layer located on the low refractive index layer. The low refractive index layer has a lower refractive index than both the transparent electrode and the first thin-film sealing layer. Difference between respective refractive indices of the low refractive index layer and the transparent electrode is 0.4-1.1. Difference between respective refractive indices of the low refractive index layer and the first thin-film sealing layer is 0.1-0.8. The low refractive index layer has thickness of 20-130 nm.

Abstract: The present invention relates to an organic light emitting diode and a method of manufacturing the same. An organic light emitting diode according to the present invention comprises an exciton blocking layer comprising a compound represented by Formula 1 to confine an exciton to a light emitting layer to prevent light emitting leakage, and thus there is an effect of implementing an organic electroluminescence diode having excellent light emitting efficiency. Further, even though there is no separate electron injection layer, electron injection and light transport characteristics are excellent by comprising an electron transport layer comprising a compound represented by Formula 2 or 3, and thus it is possible to implement an organic light emitting diode having a simple and economical manufacturing process, a low voltage, high efficiency, and a long life span as compared to the related art.

Abstract: The present invention relates to an organic electroluminescence element including a transparent electrode, a light-reflective electrode, and an organic layer including a light-emitting layer and being between the transparent electrode and the light-reflective electrode. The organic layer includes a scattering layer for scattering light from the light-emitting layer. A standing wave results from interference of the light from the light-emitting layer. A center position of a thickness of the scattering layer is at a particular position. A maximum intensity of the standing wave at the particular position is 80% or more of a peak value of an intensity of the standing wave.

Abstract: A thin film transistor (TFT) structure includes a first metal layer. The first metal layer is configured with an insulating layer, a second metal layer covers a surface of the insulating layer, an area of the second metal layer that corresponds to an area above the first metal layer is configured with a gap. An area of the insulating layer that corresponds to the gap is configured with a groove. An active layer made of an indium gallium zinc oxide (IGZO) covers surfaces of the second metal layer, the gap, and the groove.

Abstract: A thin-film transistor includes a substrate, a gate electrode formed over the substrate, a gate insulating layer formed over the gate electrode and the substrate, an oxide semiconductor layer formed over the gate insulating layer and comprising a source section and a drain section, a first electrode formed over the substrate and electrically connected to the source section, and a second electrode formed over the substrate and electrically connected to the drain section. The thin-film transistor further includes a first barrier layer disposed between the oxide semiconductor layer and the first electrode, a second barrier layer disposed between the first barrier layer and the first electrode, and the first electrode being electrically connected to the oxide semiconductor layer via the first barrier layer and the second barrier layer.

Abstract: To provide a highly reliable semiconductor device. The semiconductor device includes a first oxide layer over an insulating film; an oxide semiconductor layer over the first oxide layer; a gate insulating film over the oxide semiconductor layer; and a gate electrode over the gate insulating film. The first oxide layer contains indium. The oxide semiconductor layer contains indium and includes a channel formation region. The distance from the interface to the channel formation region is 20 nm or more, preferably 30 nm or more, further preferably 40 nm or more, still further preferably 60 nm or more.

Abstract: A miniaturized transistor having high electrical characteristics can be provided with high yield. High performance, high reliability, and high productivity of a semiconductor device including the transistor can be achieved. The semiconductor device includes a gate electrode over an insulating surface; a base insulating film which is over the insulating surface and from which the gate electrode protrudes; a gate insulating film over the base insulating film and the gate electrode; an oxide semiconductor film over the gate insulating film; and a source electrode and a drain electrode in contact with an oxide semiconductor film. The thickness of the oxide semiconductor film is smaller than the difference between the thickness of the gate electrode and the thickness of the base insulating film.

Abstract: A chip package includes an integrated circuit chip. A first group of terminal pads of the chip package is electrically connected to the integrated circuit chip and a second group of terminal pads of the chip package is electrically connected to the integrated circuit chip. The first and second groups of terminal pads are arranged on a common terminal surface of the chip package. A pad size of a terminal pad of the first group of terminal pads is greater than a pad size of a terminal pad of the second group of terminal pads.