Abstract: According to one embodiment, a semiconductor memory device includes a plurality of first interconnects extending in a first direction, a plurality of second interconnects extending in a second direction, a plurality of stacked films respectively provided between the first interconnects and the second interconnects, each of the plurality of stacked films including a variable resistance film, a first inter-layer insulating film provided in a first region between the stacked films, and a second inter-layer insulating film provided in a second region having a wider width than the first region. The second inter-layer insulating film includes a plurality of protrusions configured to support one portion of the plurality of second interconnects on the second region. A protruding length of the protrusions is less than a stacking height of the stacked films.

Abstract: A resistance variable memory device including a vertical transistor includes an active pillar including a channel region, a source formed in one end of the channel region, and a lightly doped drain (LDD) region and a drain formed in the other end of the channel region, a first gate electrode formed to surround a periphery of the LDD region and having a first work function, and a second gate electrode formed to be connected to the first gate electrode and to surround the channel region and having a second work function that is higher than the first to work function.

Abstract: A three-dimensional memory is provided that includes a first memory level and a second memory level monolithically formed above the first memory level. The first memory level includes a first steering element coupled in series with and vertically stacked above or below a first non-volatile state change element. The second memory level includes a second steering element coupled in series with and vertically stacked above or below a second non-volatile state change element. Other aspects are also provided.

Abstract: The process disclosed herein produces macroscopic quantities of semiconducting arsenic sulfide nanofibers within one to three days. The process is biotically influenced by the bacteria Shewanella sp. Strain ANA-3. The fibers are semiconductors with bandgaps between 2.2 and 2.5 eV. Newly measured semiconducting and bandgap properties can lead to applications in the semiconductor, transistor, and solar energy fields. A faster and more robust biological component makes the overall process more commercially feasible than it would have been otherwise. The faster rate allows for larger yields of nanofibers in a predetermined period of time.

Abstract: An edge-emitting etched-facet optical semiconductor structure has a substrate, an active multiple quantum well (MQW) region formed on the substrate, and a ridge waveguide formed over the MQW region extending in substantially a longitudinal direction between a waveguide first etched end facet and a waveguide second etched end facet. A mask layer used to form windows in which the etched end facets are disposed consists of a single dielectric material disposed directly on the ridge waveguide. An optical coating consisting of no more than one layer of the same dielectric material of which the second mask is made is disposed directly on the second mask and disposed directly on the windows to coat the etched end facets.

Abstract: A semiconductor light emitting element is provided in which an optical intensity distribution of light to be emitted is the normal distribution and which can form a highly fine image. In the semiconductor light emitting element, first regions and second regions are periodically and alternately arranged in an optical waveguide along an extending direction thereof, and when the number of the first regions and the number of the second regions are represented by P1 and P2, respectively, if (P1?P2)=1, P2 is an integer of 2 or more, and if (P2?P1)=1, P1 is an integer of 2 or more. In addition, the effective refractive index of the first region is different from the effective refractive index of the second region, the width of the first region is different from the width of the second region, or two types of light in a fundamental transverse mode are emitted.

Abstract: An Al0.95Ga0.05N:Mg (25 nm) single electron barrier can stop electrons having energy levels lower than the barrier height. Meanwhile, a 5-layer Al0.95Ga0.05N (4 nm)/Al0.77Ga0.23N (2 nm) MQB has quantum-mechanical effects so as to stop electrons having energy levels higher than the barrier height. Thus, electrons having energy levels higher than the barrier height can be blocked by making use of multiquantum MQB effects upon electrons. The present inventors found that the use of an MQB allows blocking of electrons having higher energy levels than those blocked using an SQB. In particular, for InAlGaN-based ultraviolet elements, AlGaN having the composition similar to that of AlN is used; however, it is difficult to realize a barrier having the barrier height exceeding that of AlN. Therefore, MQB effects are very important.

Abstract: A semiconductor chip with a layer stack includes a first semiconductor layer sequence and a second semiconductor layer sequence. The first semiconductor layer sequence includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type and an active zone arranged therebetween. The second semiconductor layer sequence includes the second semiconductor region of the second conductivity type, a third semiconductor region of the first conductivity type and a second active zone arranged therebetween.

Abstract: A system is provided and includes a wafer and a mask. The wafer includes a silicon-on-insulator (SOI) structure disposed on a buried oxide (BOX) layer and has a first region with a first SOI thickness and a second region with a second SOI thickness, the first and second SOI thicknesses being different from one another and sufficiently large such that respective pairs of SOI pads connected via respective nanowires with different thicknesses are formable therein. The mask covers one of the first and second regions and prevents a thickness change of the other of the first and second regions from having effect at the one of the first and second regions.

Abstract: An integrated circuit device includes a first transistor having a first channel between a first source/drain, and a second transistor having a second channel between a second source/drain. The first transistor operates based on a first amount of current and the second transistor operates based on a second amount of current different from the first amount of current. The first and second channels have fixed channel widths. The fixed channel widths may be based on fins or nanowires included in the first and second transistors.

Abstract: A method of manufacturing a graphene laminated structure includes plasma-treating a surface of a hexagonal boron nitride sheet using a fluorine-based gas plasma, depositing the hexagonal boron nitride sheet on a graphene sheet, and forming an insulating layer on a surface of the surface-treated hexagonal boron nitride sheet.

Abstract: A field effect transistor includes a substrate, a first graphene (Gr) layer on the substrate, a second graphene (Gr) layer on the substrate, a fluorographene (GrF) layer on the substrate and between the first and second graphene layers, a first ohmic contact on the first graphene layer, a second ohmic contact on the second graphene layer, a gate aligned over the fluorographene layer, and a gate dielectric between the gate and the fluorographene layer and between the gate and the first and second ohmic contacts.

Abstract: A tunnel field effect transistor (TFET) includes a source region, the source region comprising a first portion of a nanowire; a channel region, the channel region comprising a second portion of the nanowire; a drain region, the drain region comprising a portion of a silicon pad, the silicon pad being located adjacent to the channel region; and a gate configured such that the gate surrounds the channel region and at least a portion of the source region.

Abstract: In an aspect, an organic light-emitting display apparatus is provided, including: an insulating layer having a inclined structure; a first electrode disposed on the insulating layer; a selective wavelength transparent layer disposed on the first electrode; a pixel defined layer disposed on the insulating layer and the first electrode and defining an emissive region and a non-emissive region; an organic emissive layer disposed on the first electrode; and a second electrode disposed on the organic emissive layer.

Abstract: A heterocyclic compound is represented by Formula 1. The heterocyclic compound may be used in an organic layer of an organic light-emitting diode. An organic light-emitting diode includes a first electrode, a second electrode and an organic layer, and the organic layer includes the heterocyclic compound represented by Formula 1. The organic light-emitting diode may be used in a flat panel display device, in which the first electrode of the organic light-emitting diode may be electrically connected to a source or drain electrode of a thin film transistor.

Abstract: An organic light emitting diode device includes an anode and a cathode facing each other, and an emission layer interposed between the anode and cathode, the emission layer including a compound represented by the following Chemical Formula 1 and a compound represented by the following Chemical Formula 2:

Abstract: An organic light-emitting display device and a method of manufacturing the organic light-emitting display device are provided. The organic light-emitting display device includes: a substrate including first and second areas; a pixel electrode formed in the first area of the substrate; an auxiliary electrode formed in the second area of the substrate; an intermediate layer including an organic emission layer and formed on the pixel electrode and the auxiliary electrode; a first common electrode formed on the intermediate layer; and a second common electrode formed on the first common electrode, where the second common electrode and the auxiliary electrode contact each other through a contact hole which penetrates the first common electrode and the intermediate layer formed on the auxiliary electrode.

Abstract: An anthracene-based compound and an organic light emitting diode comprising the anthracene-based compound have been disclosed.

Abstract: Disclosed is an OLED display device. The OLED display device includes a metal line and a thin film transistor that are formed on a substrate, a first insulating layer formed on the metal line and the thin film transistor, a storage electrode formed on the first insulating layer, and connected to the metal line, a second insulating layer formed on the storage electrode, and an anode electrode formed on the second insulating layer to be connected to the thin film transistor and overlapping the storage electrode with the second insulating layer therebetween.

Abstract: Provided are an organic light-emitting display apparatus having a very low defect rate in a manufacturing process, and a method of manufacturing the organic light-emitting display apparatus. The organic light-emitting display apparatus includes: a substrate; a planarization layer covering the substrate and having a top surface including a recessed portion; a pixel electrode in the recessed portion of the planarization layer; a step forming unit on the top surface of the planarization layer outside of the recessed portion; and a pixel-defining layer exposing at least a central portion of the pixel electrode, and covering the step forming unit so that a top surface of the pixel-defining layer includes a protruding portion corresponding to the step forming unit.

Abstract: An organic light-emitting display apparatus whose defect rate is significantly decreased in a manufacturing procedure includes a substrate having a first sub-pixel region, a second sub-pixel region, and a third sub-pixel region; and a planarization layer covering the first sub-pixel region, the second sub-pixel region, and the third sub-pixel region, such that a distance between the substrate and a top surface of the planarization layer at the center of the first sub-pixel region is greater than a distance between the substrate and the top surface of the planarization layer at the center of the second sub-pixel region or a distance between the substrate and the top surface of the planarization layer at the center of the third sub-pixel region. A method of manufacturing the organic light-emitting display apparatus is also disclosed.

Abstract: An apparatus and a method of manufacturing a thin film semiconductor device having a thin film transistor with improved electrical properties in organic light-emitting display apparatus are described.

Abstract: An organic light emitting diode (OLED) display device the present invention includes a substrate, a thin film transistor formed on the substrate, a pixel electrode formed on the thin film transistor and electrically connected to the thin film transistor, a pixel defining layer formed on the pixel electrode and defining a pixel area, an emission layer formed on the pixel electrode and contacting the pixel electrode in the pixel area, and an intermediate layer formed on the pixel defining layer and contacting a portion of the emission layer.

Abstract: A pyrene-based compound, and an organic light-emitting diode including the pyrene-based compound are provided.

Abstract: A thin film transistor array substrate includes a plurality of pixels, each of the pixels including a capacitor comprising a first electrode, and a second electrode located above the first electrode, a data line extending in a first direction, configured to provide a data signal, located above the capacitor, and overlapping a part of the capacitor, and a driving voltage line configured to supply a driving voltage, located between the capacitor and the data line, and comprising a first line extending in the first direction, and a second line extending in a second direction substantially perpendicular to the first direction.

Abstract: A photoelectronic device includes a first electrode, a second electrode facing the first electrode, an active layer between the first electrode and the second electrode, and an auxiliary layer between the first electrode and the active layer, the auxiliary layer including a first auxiliary layer including a metal oxide and a metal and a second auxiliary layer including a first organic material having a HOMO energy level of greater than or equal to about 6.0 eV.

Abstract: An organic light emitting display device and a method of manufacturing the same are provided. The organic light emitting display device includes a substrate including red, green, and blue sub-pixel regions, reflective electrodes on the substrate, a reflective protective film on the substrate and surrounding sides and front surfaces of each reflective electrode, the reflective electrodes being on the reflective protective film, first electrodes on the substrate, the reflective protective film being on the first electrodes, the first electrodes including different respective thicknesses in the respective red, green, and blue sub-pixel regions, a second electrode facing the first electrodes, and a white organic common layer between the first and second electrodes.

Abstract: An anthracene derivative is represented by a formula (1) below, in which at least one of Ar1, Ar2, Ar3, L1, L2 and L3 is a group derived from a skeleton represented by a formula (10) below,

Abstract: An organic electrical device can include a first dielectric substrate including a PVDF-TrFe-CFE terpolymer, a first semiconductor region coupled to a first surface of the first dielectric substrate, and a first gate region coupled to a second surface of the first dielectric substrate, the second surface opposite the first surface and opposite the first semiconductor region. The organic electrical device can include an organic field-effect transistor (OFET), comprising the first gate region, the first dielectric substrate, a first source region, and a first drain region respectively electrically coupled to the first semiconductor region. An electrostrictive actuator or mechanical sensor can be co-integrated on the first dielectric substrate, the actuator or sensor including first and second conductive regions located on opposite surfaces of the first dielectric substrate. The actuator or sensor can be electrically coupled to the OFET, and controlled at least in part by the OFET.

Abstract: An organic light emitting compound includes the compound of Formula 1 below: Descriptions of substituents of Formula 1 are as described in the detailed description.

Abstract: An electronic device may be provided with a display such as an organic light-emitting diode display. The display may include an array of display pixels formed on a polymer substrate layer. The polymer substrate layer may include an contiguous layer of polyimide that forms a substrate layer in additional structures such as a polymer film and a flexible printed circuit. A first transition region may be interposed between the display and the polymer film, and a second transition region may be interposed between the polymer film and the flexible printed circuit. Metal traces may be formed on the polymer film and on the flexible printed circuit. A display driver integrated circuit may be mounted to the traces on the polymer film. The polymer film may form a U-shaped bend. The flexible printed circuit may be coupled to a printed circuit board in the device using hot bar solder connections.

Abstract: A display device includes a display panel including a display area to display an image, and a non-display area adjacent to the display area and having an opening; a driver on a rear of the display panel; and a flexible printed circuit board (FPCB) connecting the non-display area to the driver through the opening, and is bent at an angle less than 90 degrees from the non-display area to the driver.

Abstract: Disclosed are a photoelectronic device including a first electrode including a first metal; an active layer disposed between the first electrode and a second electrode; and a diffusion barrier layer disposed between the first electrode and the active layer; the diffusion barrier layer including a second metal, wherein the second metal has a thermal diffusivity that is lower than a thermal diffusivity of the first metal, and wherein the first electrode and the diffusion barrier layer are configured to transmit light, and an image sensor including the photoelectronic device.

Abstract: The present disclosure relates to an organic electroluminescent compound employed as a hole transport material or a hole injection material and an organic electroluminescent device including the same. The organic electroluminescent compound is represented by [Chemical Formula 1] and an organic electroluminescent device employing the organic electroluminescent compound as a hole transport material exhibits very superior luminous efficiency and lifetime characteristics.

Abstract: An organic electroluminescent element using a compound represented by the following general formula emits dark blue light and has a small change in the chromaticity during luminance modulation: wherein each of R1 to R8 represents a hydrogen atom or a substituent; A1 to A4 represent CR31 or N; L and X each independently represent any one of CR32R33, NR34, O, S, and SiR35R36; and each of R31 to R36 represents a hydrogen atom or a substituent.

Abstract: An organic electroluminescent element including a substrate, a pair of electrodes including an anode and a cathode, disposed on the substrate, and at least one organic layer including a light emitting layer, disposed between the electrodes, in which at least one kind of compound represented by the following general formula is contained in any layer of the at least one organic layer, is an organic electroluminescent element, in which the generation of dark spots during driving is inhibited: wherein Q, Ar, L, and n are as defined in the application.

Abstract: An organic electroluminescence element comprising: an anode layer, a cathode layer, and an organic luminescence layer therebetween, the organic luminescence layer having a carbazole derivative with a glass-transition temperature of 110° C. or higher, and a phosphorescent dopant. This structure makes it possible to provide an organic electroluminescence element which can make use of the triplet exciton state of the carbazole derivative even at room temperature and which has a practical life and superior heat-resistance.

Abstract: Provided is a novel aromatic amine derivative with specified structure. Also provided is an organic electroluminescence device having one or more organic thin-film layers including at least a luminescent layer interposed between a cathode and an anode, in which at least one of the organic thin-film layers contains the above aromatic amine derivative alone or as a component of mixture. As a result, there is provided an organic electroluminescence device that has high emission luminance and high heat resistance, excelling in high-temperature storage ability and has long life, and provided an aromatic amine derivative for realizing the organic electroluminescence device.

Abstract: By using a polymer compound comprising a constituent unit represented by the formula (1) and a constituent unit represented by the formula (2) in an organic layer of an organic photoelectric conversion device, photoelectric conversion efficiency can be enhanced: wherein R1 represents a hydrogen atom; or a substituent; Y1 represents an oxygen atom, a sulfur atom or —N(R3)—; R3 represents a hydrogen atom or a substituent; ring Z1 and ring Z2 represent each independently an optionally substituted aromatic carbocyclic ring or an optionally substituted heterocyclic ring; wherein R2 is different from R1 and represents a hydrogen atom or a substituent; Y2 represents an oxygen atom, a sulfur atom or —N(R3)—; R3 represents a hydrogen atom or a substituent; ring Z3 and ring Z4 represent each independently an optionally substituted aromatic carbocyclic ring or an optionally substituted heterocyclic ring.

Abstract: There is provided an organic electronic device including an anode, a hole transport layer, an emissive layer, an electron transport layer, and a cathode. The emissive layer includes at least one first electroluminescent material and the electron transport layer includes at least one electron transport material and at least one second electroluminescent material. The second electroluminescent material has a concentration that is greater adjacent the emissive layer. The device has white light emission.

Abstract: There are provided a driving circuit board and a method of manufacturing the same as well as a display unit and an electronic apparatus in which a number of forming steps is small and usage efficiency of materials is improved.

Abstract: An organic light emitting device having a simplified structure, and a method of fabricating the same, are provided.

Abstract: The invention relates to substituted ullazine and analogs of ullazine as sensitizers for dye-sensitized solar cells (DSSCs) and other photoelectrochemical and/or optoelectronic devices. The sensitizers may comprise donor substituents and/or acceptor substituents, besides an anchoring group suitable for attaching the sensitizer on a semiconductor surface. DSSCs based on this type of sensitizers exhibit high power conversion efficiencies.

Abstract: In general, according to one embodiment, a semiconductor device includes a first electrode, an oxide semiconductor film, an insulating film, a first protective film, second and third electrodes. The oxide semiconductor film is provided on the first electrode. The oxide semiconductor film includes a first face on the first electrodes side and a second face on a side opposite to the first face. The insulating film is provided between the first electrode and the oxide semiconductor film. The first protective film includes a first film provided between the insulating film and the first face and a second film provided on the second face. The first protective film suppresses substances including hydrogen from being introduced from an outer side of the oxide semiconductor film to an inner side of the oxide semiconductor film. The second electrode and the third electrode are electrically connected to the oxide semiconductor film.

Abstract: The TFT substrate includes a gate electrode disposed on an insulating substrate; a gate insulating layer disposed on the gate electrode; a source/drain electrode disposed on the gate insulating layer; and an oxide semiconductor layer disposed between the gate insulating layer and the source/drain electrode. The oxide semiconductor layer includes a first portion that does not contact the source/drain electrode and in which a channel region is defined and a second portion in which a contact region that contacts the source/drain electrode is defined. The second portion includes a first oxide semiconductor layer and a second oxide semiconductor layer disposed on the first oxide semiconductor layer.

Abstract: According to example embodiments a TFT includes: a substrate; a gate electrode on the substrate; a gate insulating layer on the gate electrode; a channel layer on the gate insulating layer, the channel layer including an indium-rich metal-oxide layer; a first electrode on one end of the channel layer; a second electrode on the other end of the channel layer; and a passivation layer on the channel layer between the first and second electrodes.

Abstract: Provided are a method of forming an oxide thin film and an electrical device and thin film transistor using the method. The method includes forming an oxide thin film on a substrate by applying a precursor solution; and performing a thermal treatment process on the substrate under a pressurized atmosphere using a gas at about 100° C. to about 400° C.

Abstract: Disclosed is a semiconductor device including two oxide semiconductor layers, where one of the oxide semiconductor layers has an n-doped region while the other of the oxide semiconductor layers is substantially i-type. The semiconductor device includes the two oxide semiconductor layers sandwiched between a pair of oxide layers which have a common element included in any of the two oxide semiconductor layers. A double-well structure is formed in a region including the two oxide semiconductor layers and the pair of oxide layers, leading to the formation of a channel formation region in the n-doped region. This structure allows the channel formation region to be surrounded by an i-type oxide semiconductor, which contributes to the production of a semiconductor device that is capable of feeding enormous current.

Abstract: A semiconductor device that includes an oxide semiconductor and is suitable for a power device having an ability to allow large current to flow therein. The semiconductor device includes: a first electrode having an opening and a second electrode provided in the opening of the first electrode and separated from the first electrode, over the semiconductor layer; a gate insulating layer over the first electrode, the second electrode, and the semiconductor layer; and a ring-shaped gate electrode over the gate insulating layer. An inner edge portion of the ring-shaped gate electrode overlaps the second electrode, while an outer edge portion of the ring-shaped gate electrode overlaps a part of the oxide semiconductor layer, which is located between the first electrode and the second electrode. An element imparting conductivity to the oxide semiconductor layer is added to the part.

Abstract: Provided are a zinc oxide-based sputtering target, a method of preparing the same, and a thin film transistor including a barrier layer deposited by the zinc oxide-based sputtering target. The zinc oxide-based sputtering target includes a sintered body that is composed of zinc oxide in which indium oxide is doped in a range from about 1% w/w to about 50% w/w. A backing plate is coupled to a back of the sintered body. The backing plate supports the sintered body.