Abstract: A keyboard device capable of suppressing noise that occurs upon release of the key is provided. The key is formed with a protrusion and a hammer is formed with a sliding surface. Moreover, the hammer is provided with contact portions that come into contact with a side surface of the protrusion when the key is pressed to the bottom in a key-pressing direction. Thus, when the key is released, the contact between the side surface of the protrusion and the contact portions prevents the key from rotating before the hammer, thereby preventing the protrusion from departing from the sliding surface and suppressing the generation of noise that occurs when the protrusion falls on (hits) the sliding surface.

Abstract: The invention relates to a limit switch comprising: a body (1) produced along a main axis (X) and containing a switching device, a head (2) that is removable and orientable with respect to the body (1) so that it can adopt several distinct angular positions about the main axis (X), said head (2) comprising actuating means arranged to act on the switching device, fixing means for fixing the limit switch to a support (S), the fixing means being arranged on the head (2) of the limit switch, the head (2) having at least two separate bearing planes, said fixing means being arranged to fix the head so that it bears against the support via one or other of its two bearing planes.

Abstract: A contact apparatus of a circuit breaker is disclosed. The contact apparatus has an outer carrier, an inner carrier, one or more contact fingers pivotally mounted to the inner carrier, a cam lever pivotally mounted to the outer carrier, and a cam and cam profile formed on respective ones of the cam lever and inner carrier. Circuit breakers and electrical contact assemblies having the contact apparatus, and methods of operating the contact apparatus and electrical contact assemblies are disclosed, as are other aspects.

Abstract: A vacuum interrupter, including: an insulating housing; a movable end cap; a stationary end cap; a pair of movable and stationary contacts; and a pair of shields. The pair of shields is fixed on the movable end cap and the stationary end cap, respectively. The insulating housing, the movable end cap, and the stationary end cap cooperate to form a closed space. The closed space includes a movable fracture and a stationary fracture. The movable fracture is formed by the pair of movable and stationary contacts for carrying rated current and disconnecting capacitive load whereby achieving breaking performance of the vacuum interrupter. The stationary fracture is formed by the pair of shields. When the pair of stationary and movable contacts reaches a full open position, the stationary contact and the movable contact enter the pair of shields, respectively.

Abstract: The present invention concerns a hydrophone signal limiting shunt switch, electrically associated and physically conjoined with a conventional hydrophone, for limiting hydrophone signal operability to water depths less than a predetermined, proscribed depth. The primary components of the shunt switch are a protected plunging bolt, at least one disk spring and an electrically conducting foot, none of which are ever in direct contact with the ocean environment. Flexure of the disk spring is the sole determinant of switch actuation. Upon sensing a predetermined, proscribed operating depth, the protected plunging bolt forces the electrically conducting foot to shunt the electrical connection between the associated hydrophone and the hydrophone transmission cable, consequently, quenching the hydrophone signal at the proscribed depth.

Abstract: Method and apparatus for a mechanical latching of at least one pole of a relay selected from SPST, SPDT, DPDT, reversing DPDT, multi pole MPST and MPDT using a mechanical latching device attached to or actuated by an armature for pulling a springy element for maintaining engagement between at least one pole contact and at least one of a terminal contact, including PCB assembly for controlling the relay and operating electrical loads by feeding electric power pulse to a relay coil for pulling the armature including a CPU program for providing communication and controlling for the relay to switch on-off or change over, or from cross to straight and straight to cross.

Abstract: An electromagnet device is configured to generate a magnetic attractive force between a stationary core and a movable core when electricity is applied to a coil, so that the movable core is moved in a direction for coming into contact with the stationary core, and a movable shaft is moved in a direction in which a first end face of the movable shaft separates from a movable terminal. After the movable contact comes in contact with the fixed contact, the movable core moves further in a direction for coming into contact with the stationary core. A yoke made of a magnetic body is disposed between the movable terminal and the first end of the movable shaft.

Abstract: A circuit breaker includes a shielding component having an external portion which defines a space external to the circuit breaker housing and covers a vent in the circuit breaker housing to direct gasses and debris from the vent to an outlet. The external portion also prevents insertion of the circuit breaker into a breaker box closer than the distances defining the space. This can have the advantage of preventing arcing from the breaker contacts to the breaker box. The external portion may also prevent insertion of the circuit breaker into a breaker box such that a vent in the circuit breaker housing is blocked. In some implementations, the shielding component contains an internal portion which extends into the circuit breaker housing and is disposed to impede debris generated by contact arcing, or other debris, from entering the mechanism of the circuit breaker.

Abstract: Embodiments disclose a trip blocking apparatus of a circuit breaker exhibiting no trip at OFF functionality. The trip blocking apparatus effectively blocks tripping of a trip bar when the circuit breaker is in the OFF configuration. The trip blocking apparatus has a trip blocking arm and a blocking lever. A first projection of the blocking lever is configured to contact a handle arm, and a second projection is configured to interfere with the trip blocking arm to block tripping of the trip bar responsive to handle arm motion. Actuator resetting and blocking apparatus and trip blocking assemblies and methods of operating the trip blocking assembly are provided, as are other aspects.

Abstract: A shunt trip device for a circuit breaker having a trip bar for tripping the circuit breaker. The device includes a housing having a slot and a bottom wall having a pivot pocket. The device also includes a lever arm having a lever projection portion and a pivot portion. The pivot portion is located in the pivot pocket to enable rotation of the lever arm in the slot about a lever rotation axis between first and second positions. When the lever arm is in the second position, the lever projection portion moves the trip bar and trips the circuit breaker. The device further includes an actuation device that moves the lever arm to the second position. The pivot portion and pivot pocket form a configuration that increases a perpendicular distance between a force generated by the actuation device and the lever rotation axis.

Abstract: A fuse includes a body, a first conductive terminal coupled with a first end of the body, and a second conductive terminal coupled with a second end of the body. The body, the first conductive terminal, and the second conductive terminal define an exterior of the fuse. The fuse also includes an interruption assembly including a fusible element. The fusible element includes carbon fiber, is disposed on a conductive path between the first conductive terminal and the second conductive terminal, and is configured to break when a current through the fusible element exceeds a predetermined current.

Abstract: A gas filled detector shell for the detection of high energy transmissions, including microwaves, lasers, electromagnetic signals, RF waves, radiation, and/or other transmissions emitted by a source including a weapon system. The shell may also be used as a safety device to warn and alert personnel working around high energy devices of electromagnetic leaks. In one embodiment, the shell is made of a substance that detects or senses energy transmission.

Abstract: The microwave introducing mechanism includes an antenna unit having a planar antenna radiating a microwave into a chamber; a tuner for performing impedance matching; and a heat dissipation device for dissipating a heat from the antenna unit. The tuner has a tuner main body including a tubular outer conductor and a tubular inner conductor to serve as a part of a microwave transmission line; slugs provided between the outer conductor and the inner conductor to be movable along a longitudinal direction of the inner conductor; and a driving device for moving the slugs. The heat dissipation device has a heat pipe configured to transfer the heat of the antenna unit from its heat input end to its heat dissipation end.

Abstract: A radiation generating apparatus has a radiation generating tube held in a holding container 12 and a cooling medium between the holding container and the radiation generating tube. The radiation generating tube includes an envelope with an aperture, an electron emitting source arranged in the envelope, a target arranged facing the source, for generating radiation responsive to irradiation with an electron beam emitted from the source, and a tubular shield for holding the target by an inner wall thereof and shielding part of the radiation emitted from the target. The shield is arranged to protrude outward of the envelope so that the target is positioned on an outer side of the aperture, and the cooling medium contacts at least a part of the shield.

Abstract: A device for producing x-rays includes: a housing that includes a folded high-voltage multiplier coupled to a filament transformer, the transformer coupled to an x-ray tube for producing the x-rays. A method of fabrication and an x-ray source are disclosed.

Abstract: A radiation generating apparatus includes a cathode array including a plurality of electron emitting portions, and an anode array including a plurality of targets and a chained connection unit that connects the targets. The chained connection unit includes a plurality of shielding members and a thermal transfer member, the shielding members being arranged at locations corresponding to the locations of the respective targets, and the thermal transfer member having a thermal conductivity higher than a thermal conductivity of the shielding members. The thermal transfer member has a portion that is continuous in a direction in which the targets are arranged.

Abstract: An X-ray emitting target including a diamond substrate, a first layer disposed on the diamond substrate and including a first metal, and a second layer disposed on the first layer and including a second metal whose atomic number is 42 or more and which has a thermal conductivity higher than that of the first metal. Carbide of the first metal is present at a boundary between the diamond substrate and the first layer. The target is prevented from overheating, so that output variation due to rising temperature is suppressed. Thus it is possible to emit stable and high output X-rays.

Abstract: In a radiation generating apparatus of the invention, a radiation tube having a cathode for emitting an electron and an anode for generating a radiation by an irradiation of the electron emitted from the cathode is enclosed in a housing container filled with an insulating liquid. The apparatus has a mechanism in which a voltage for allowing the insulating liquid to flow can be applied between the cathode and the anode in a state where the cathode does not emit any electron. Even when the generation of the radiation is stopped, the insulating liquid can be efficiently sufficiently cooled without providing mechanical stirring means, and a high reliability is obtained even for intermittent use.

Abstract: An insulation structure provided among a plurality of electrodes for extraction of an ion beam from a plasma generating section is provided. The insulation structure includes an insulation member including a first part connected to a first electrode and a second part connected to a second electrode and configured to support the first electrode to the second electrode, a first cover surrounding at least a part of the first part to protect the first part from contamination particles, and a second cover surrounding at least a part of the second part to protect the second part from contamination particles. At least one of the first part and the second part is made of a machinable ceramic or a porous ceramic.

Abstract: An electron beam writing apparatus includes: a first aperture plate that shapes an electron beam emitted from an electron gun assembly; a second aperture plate onto which an electron beam of an aperture plate image passing through the first aperture plate is projected; and a first shaping deflector and a second shaping deflector which are provided between the first aperture plate and the second aperture plate, respectively, deflect an electron beam, control an irradiation position of the aperture plate image on the second aperture plate, and determine a shot shape and a shot size. The first shaping deflector deflects an electron beam such that the aperture plate image is positioned at a determined position in accordance with a shot shape and a shot size. The second shaping deflector deflects an electron beam deflected by the first shaping deflector and controls formation of a desirable shot size.

Abstract: A single bend energy filter for controlling deflection of a charged particle beam is provided. It includes a first array of electrodes and a second array of electrodes to define a beam channel for the charged particle beam to pass through; an unmatched steering electrode among the first array of electrodes for tuning the bend angle of the charged particle beam; and a plurality of electrical biases applied to the first array of electrodes, the second array of electrodes and the unmatched steering electrode, wherein portion or all of the electrodes have different shapes. A method for controlling deflection of a charged particle beam is also provided. Depending on use of an unmatched steering electrode, the bend angle of the charged particle beam may be fine-tuned, so as to effectively control the deflection of the charged particle beam to achieve a centered beam at the wafer plane.

Abstract: A TEM grid provides posts having steps, the steps increasing the number of samples that can be attached to the grid. In some embodiments, each post includes a one sided stair step configuration. A method of extracting multiple samples includes extracting samples and attaching the samples to the different stair steps on the posts.

Abstract: One embodiment relates to a method of automated inspection of scattered hot spot areas on a manufactured substrate using an electron beam apparatus. A stage holding the substrate is moved along a swath path so as to move a field of view of the electron beam apparatus such that the moving field of view covers a target area on the substrate. Off-axis imaging of the hot spot areas within the moving field of view is performed. A number of hot spot areas within the moving field of view may be determined, and the speed of the stage movement may be adjusted based on the number of hot spot areas within the moving field of view. Another embodiment relates to an electron beam apparatus for inspecting scattered areas on a manufactured substrate. Other embodiments, aspects and features are also disclosed.

Abstract: A tandem accelerator and ion implanter with improved performance is disclosed. The tandem accelerator includes a plurality of input electrodes, a plurality of output electrodes and a high voltage terminal disposed therebetween. The high voltage terminal includes a stripper tube. Neutral molecules are injected into the stripper tube, which remove electrons from the incoming negative ion beam. The resulting positive ions are accelerated toward the plurality of output electrodes. To reduce the amount of undesired positive ions that exit the stripper tube, bias electrodes is disposed at the entrance and exit of the stripper tube. The bias electrodes are biased a second voltage, greater than the first voltage applied to the terminal. The bias electrodes repel slow moving positive ions, preventing them from exiting the stripper tube and contaminating the workpiece.

Abstract: A process chamber includes a wafer support to mount a wafer to be processed in the process chamber, with the wafer having an annular edge exclusion area. A first electrically grounded ring extends in an annular path radially outward of the edge exclusion area and is electrically isolated from the wafer support. A second electrode is configured with a center area opposite to the wafer support. A second electrically grounded ring extends in an annular path radially outward of the second electrode and the edge exclusion area. The second electrically grounded ring is electrically isolated from the center area. An annular mount section has a DC bias ring, and the DC bias ring opposes the edge exclusion area when the wafer is present. A DC control circuit is provided for applying a DC voltage to the DC bias ring.

Abstract: A dual magnetron particularly useful for RF plasma sputtering includes a radially stationary open-loop magnetron comprising opposed magnetic poles and rotating about a central axis to scan an outer region of a sputter target and a radially movable open-loop magnetron comprising opposed magnetic poles and rotating together with the stationary magnetron. During processing, the movable magnetron is radially positioned in the outer region with an open end abutting an open end of the stationary magnetron to form a single open-loop magnetron. During cleaning, part of the movable magnetron is moved radially inwardly to scan and clean an inner region of the target not scanned by the stationary magnetron. The movable magnetron can be mounted on an arm pivoting about an axis at periphery of a rotating disk-shaped plate mounting the stationary magnetron so the arm centrifugally moves between radial positions dependent upon the rotation rate or direction.

Abstract: The magnetic characteristics of a magnetoresistive device are improved by rendering magnetic debris non-magnetic during processing operations. Further improvement is realized by annealing the partially- or fully-formed device in the presence of a magnetic field in order to eliminate or stabilize magnetic micro-pinning sites or other magnetic abnormalities within the magnetoresistive stack for the device. Such improvement in magnetic characteristics decreases deviation in switching characteristics in arrays of such magnetoresistive devices such as those present in MRAMs.

Abstract: Provided is a mass spectrometer capable of easy exchange of a measurement sample and suppressing a carryover. The mass spectrometer includes a mass spectrometry section, an ion source the internal pressure of which is reduced by a differential pumping from the mass spectrometry section and the ion source ionizes the sample gas, a sample container in which the sample gas is generated by vaporizing the measurement sample, a thin pipe that introduces the sample gas generated in the sample container into the ion source, an elastic tube of openable and closable that connects the sample container and the thin pipe, a pair of weirs that closes or opens the elastic tube so as to sandwich the elastic tube, and a cartridge that integrates the sample container, the thin pipe, and the elastic tube, and is detachable in a lump from a main body of the mass spectrometer.

Abstract: Ions with a predetermined range of ion mobilities are produced by filtering input ions with at least two consecutive ion mobility high pass and/or low pass filters. Each ion mobility filter is formed by entraining ions in a moving gas and applying a DC electric field to the ions which causes the ions to move in a direction opposite to the gas flow. An ion mobility high pass filter is formed when the DC electric field drives the ions against the flow of gas, whereas an ion mobility low pass filter is formed when a the gas flow drives entrained ions against an DC electric field barrier.

Abstract: A mass spectrometer is disclosed comprising a mass selective ion trap or mass analyzer arranged upstream of an ion guide. Ions are scanned out of the mass selective ion trap or mass analyzer and are received in one or more axial potential wells created or formed within the ion guide. One or more transient DC voltages or potentials are preferably applied to the ion guide in order to create a plurality of axial potential wells which are translated along the length of the ion guide. Ions are released in packets from the exit of the ion guide and are orthogonally acceleration into a drift or flight region of an orthogonal acceleration Time of Flight mass analyzer with a relatively high duty cycle.

Abstract: A closed-loop ion guide is disclosed comprising a plurality of electrodes having apertures through which ions are transmitted in use. Ions are injected into the closed-loop ion guide and may make several circuits of the closed-loop ion guide before being ejected from the ion guide. In a mode of operation the ion guide may be arranged to separate ions temporally according to their ion mobility.

Abstract: An ion processing device includes electrically conductive vacuum manifold segments serially positioned and enclosing a volume along an axis. The segments are electrically isolated from each other and independently addressable by a voltage source. An ion optics device is positioned in the volume. A voltage differential between each manifold segment and the ion optics device is maintained below a maximum value by applying different voltages to respective manifold segments. The voltage differential may be controlled to avoid voltage breakdown in a low-pressure, high-voltage gas environment. The ion optics device may in some cases be an ion mobility drift cell.

Abstract: According to some embodiments, systems and methods for rapid evaporation of liquid phase samples are provided. The method includes directing liquid samples to a thermal evaporation ionizing device, thermally evaporating the liquid samples to create gaseous molecular ions, and directing the gaseous molecular ions to an ion analyzer to analyze and provide information regarding the chemical composition of the liquid samples.

Abstract: In some embodiments, a time of flight mass spectrometer can comprise an input orifice for receiving ions, a first ion accelerator stage for accelerating the ions along a first path, at least one ion reflector for receiving said accelerated ions and redirecting said ions along a second path different than the first path, a detector for detecting at least a portion of the ions redirected by said at least one ion reflector, and at least first and second field free drift regions disposed between said first acceleration stage and said detector, wherein said second field free region is disposed in proximity of the detector. In some embodiments, the lengths of the field free drift regions can be selected so as to provide 1st and 2nd order corrections of the time of flight of the ions with respect to variation in their initial positions.

Abstract: Provided is a microwave plasma discharge lamp apparatus which includes a rectangular waveguide having a rectangular shape one end of which is closed and the other end is open and receiving a microwave through an opening to put out linearly polarized microwaves; a discharge lamp; a resonator cavity, formed in a cylindrical shape, one end of which is open, which is disposed to surround the discharge lamp, and which is made of a conductive mesh, thereby allowing the passage of the light from the discharge lamp; and a phase shifter, which has a cross-shaped waveguide opened in a propagation direction of the linearly polarized microwaves, is disposed between the other end of the rectangular waveguide and one end of the resonator cavity, and receives the linearly polarized microwaves from the rectangular waveguide to generate elliptically polarized microwaves in the cylindrical resonator cavity. The elliptically polarized microwaves discharge the discharge lamp.

Abstract: An apparatus for cleaning a surface of wafer or substrate includes a plate being positioned with a gap to surface of the wafer or substrate, and the plate being rotated around an axis vertical to surface of wafer or substrate. The rotating plate surface facing surface of the wafer or substrate has grooves, regular patterns, and irregular patterns to enhance the cleaning efficiency. Another embodiment further includes an ultra sonic or mega sonic transducer vibrating the rotating plate during cleaning process.

Abstract: A cleaning agent for a silicon wafer (a first cleaning agent) contains at least a water-based cleaning liquid and a water-repellent cleaning liquid for providing at least a recessed portion of an uneven pattern with water repellency during a cleaning process. The water-based cleaning liquid is a liquid in which a water-repellent compound having a reactive moiety chemically bondable to Si element in the silicon wafer and a hydrophobic group, and an organic solvent including at least an alcoholic solvent are mixed and contained. With this cleaning agent, the cleaning process which tends to induce a pattern collapse can be improved.

Abstract: Provided is a method of fabricating a semiconductor device. The method includes: preparing a substrate with an etching target, and etching the etching target through a plasma-free etching process that uses an etching gas including one of interhalogen compound, F2, XeF2 and combinations thereof.

Abstract: According to the invention, there is provided a method for producing a gallium trichloride gas, the method including: a first step of reacting a metallic gallium and a chlorine gas to produce a gallium monochloride gas; and a second step of reacting the produced gallium monochloride gas and a chlorine gas to produce a gallium trichloride gas.

Abstract: A method of manufacturing a semiconductor device includes forming a laminated film on a substrate by performing a cycle a predetermined number of times. The cycle includes forming a first film which contains a predetermined element, boron, and nitrogen and which does not contain a borazine ring skeleton, and forming a second film which contains the predetermined element and a borazine ring skeleton. The first film and the second film are laminated to form the laminated film.

Abstract: A method for preparing a semiconductor with preapplied underfill comprises providing a semiconductor wafer with a plurality of metallic bumps on its top side and, optionally, through-silica-vias vertically through the silicon wafer; laminating a back grinding tape to the top of the wafer covering the metallic bumps and through silicon vias; thinning the back side of the wafer; mounting a dicing tape to the back side of the thinned wafer and mounting the silicon wafer and dicing tape to a dicing frame; removing the back grinding tape; providing an underfill material precut into the shape of the wafer; aligning the underfill on with the wafer and laminating the underfill to the wafer.

Abstract: A method of fabricating a III-nitride semiconductor device, including growing an III-nitride semiconductor and an oxide sequentially to form an oxide/III-nitride interface, without exposure to air in between growth of the oxide and growth of the III-nitride semiconductor.

Abstract: The invention is directed to a method for forming a nitride on a silicon substrate. In the method of the present invention, a silicon substrate is provided and a buffer layer is formed on the silicon substrate. The formation of the buffer layer includes a multi-level temperature modulation process having a plurality temperature levels and a plurality of temperature modulations. For each of the temperature modulations, the temperature is gradually decreased. A nitride is formed on the buffer layer.

Abstract: Methods for passivating a nanotube fabric layer within a nanotube switching device to prevent or otherwise limit the encroachment of an adjacent material layer are disclosed. In some embodiments, a sacrificial material is implanted within a porous nanotube fabric layer to fill in the voids within the porous nanotube fabric layer while one or more other material layers are applied adjacent to the nanotube fabric layer. Once the other material layers are in place, the sacrificial material is removed. In other embodiments, a non-sacrificial filler material (selected and deposited in such a way as to not impair the switching function of the nanotube fabric layer) is used to form a barrier layer within a nanotube fabric layer. In other embodiments, individual nanotube elements are combined with and nanoscopic particles to limit the porosity of a nanotube fabric layer.

Abstract: A colored photovoltaic module and method for its production, where the module includes: a photovoltaic cell; and an appearance modifying film, encapsulant or glazing; where the appearance modifying film, encapsulant or glazing includes: a light-control film; graphic material; a phosphor; a dichroic film; nano-particles; micro-dots; metal flakes; paint; an additive material for 3-D printing, Selective Laser Augmentation (SLA) or Selective Laser Sintering (SLS); or any combination thereof.

Abstract: The invention provides a method for manufacturing a nitride semiconductor device that grows a multilayer film of a III-V group nitride semiconductor in a reaction furnace into which a III group element raw material gas and a V group element raw material gas are introduced, the method including: growing a first nitride semiconductor layer at a first raw material gas flow rate of the V group element raw material gas and a first carrier gas flow rate; and growing a second nitride semiconductor layer at a second raw material gas flow rate of the V group element raw material gas lower than the first raw material gas flow rate and a second carrier gas flow rate higher than the first carrier gas flow rate, wherein the first nitride semiconductor layer and the second nitride semiconductor layer are stacked.

Abstract: A method for fabricating a wafer according to the embodiment comprises the steps of depositing an epi layer in an epi deposition part; transferring the wafer to an annealing part connected to the epi deposition part; annealing the wafer in the annealing part; transferring the wafer to a cooling part connected to the annealing part; and cooling the wafer in the cooling part, wherein the depositing of the wafer, the annealing of the wafer and the cooling of the wafer are continuously performed. An apparatus for fabricating a wafer according to the embodiment comprises an epi deposition part; an annealing part connected to the epi deposition part; and a cooling part connected to the annealing part.

Abstract: Disclosed is a method of manufacturing a thin film, the method including: growing an epitaxial layer on a surface of a wafer at a growth temperature, wherein the growing of the epitaxial layer comprises controlling a defect present on a surface of the wafer. Also, disclosed is a wafer including: a substrate; and an epitaxial layer located on the substrate, wherein a basal dislocation density of the epitaxial layer is equal to or less than 1/cm2.

Abstract: Local and global reduction of critical dimension (CD) asymmetry in etch processing is described. In an example, a method of etching a wafer of to form a plurality of staircase structures with reduced local and global asymmetry involves forming a photoresist layer on a plurality of micron-scale semiconductor structures. The photoresist layer is then trimmed with a high pressure and pulsed plasma etch process performed in a reverse MESA mode.

Abstract: To improve the performance of a semiconductor device, a semiconductor device manufacturing method includes an exposing process of performing pattern exposure of a resist film formed on a substrate by using EUV light reflected from a front surface of an EUV mask as a reflective mask. In this exposing process, the resist film is subjected to pattern exposure by repeating a process of irradiating the resist film with the EUV light by changing a focal position of the EUV light with which the resist film is irradiated, along a film thickness direction of the resist film. After this exposing process, the resist film subjected to pattern exposure is developed to form a resist pattern.