Abstract: A semiconductor device used for a semiconductor relay includes: a first diode; a second diode; an electric field shield film for covering the second semiconductor island region, where the second diode is formed; and a wiring for electrically connecting the first diode to the second diode. The wiring is arranged so as to cross above a silicon oxide film surrounding the second semiconductor island region. The electric field shield film is positioned below the wiring, and has a cutout portion in an overlapping region which overlaps the wiring. By forming the cutout portion, end portions of the electric field shield film is arranged to be shifted. Therefore, formation of a deep concave portion which is based on a concave portion on the silicon oxide film and a step of the electric field shield film over the entire width of the wiring can be prevented, and the disconnection of the wiring can be prevented.

Abstract: A method includes: forming a buffer layer over an absorber layer of a photovoltaic device; and extrinsically doping the buffer layer after the forming step.

Abstract: According to an example embodiment, a method of manufacturing a nanostructure semiconductor light-emitting device includes forming nanocores of a first-conductivity type nitride semiconductor material on abase layer to be spaced apart from each other, and forming a multilayer shell including an active layer and a second-conductivity type nitride semiconductor layers on surfaces of each of the nanocores. At least a portion the multilayer shell is formed by controlling at least one process parameter of a flux of source gas, a flow rate of source gas, a chamber pressure, a growth temperature, and a growth rate so as to have a higher film thickness uniformity.

Abstract: A light-emitting element, a light-emitting element unit and a light-emitting element package are provided, which are each reduced in reflection loss and intra-film light absorption by suppressing multiple light reflection in a transparent electrode layer and hence have higher luminance. The light-emitting element 1 includes a substrate 2, an n-type nitride semiconductor layer 3, a light-emitting layer 4, a p-type nitride semiconductor layer 5, a transparent electrode layer 6 and a reflective electrode layer 7, and the transparent electrode layer 6 has a thickness T satisfying the following expression (1): 3 ? ? 4 ? n + 0.30 × ( ? 4 ? n ) ? T ? 3 ? ? 4 ? n + 0.45 × ( ? 4 ? n ) ( 1 ) wherein ? is the light-emitting wavelength of the light-emitting element 4, and n is the refractive index of the transparent electrode layer 6.

Abstract: A method of fabricating a semiconductor light emitting device includes forming a first conductivity type semiconductor layer, forming an active layer by alternately forming a plurality of quantum well layers and a plurality of quantum barrier layers on the first conductivity type semiconductor layer, and forming a second conductivity type semiconductor layer on the active layer. The plurality of quantum barrier layers include at least one first quantum barrier layer adjacent to the first conductivity type semiconductor layer and at least one second quantum barrier layer adjacent to the second conductivity type semiconductor layer. The forming of the active layer includes allowing the at least one first quantum barrier layer to be grown at a first temperature and allowing the at least one second quantum barrier layer to be grown at a second temperature lower than the first temperature.

Abstract: A LED structure includes a support and a plurality of nanowires located on the support, where each nanowire includes a tip and a sidewall. A method of making the LED structure includes reducing or eliminating the conductivity of the tips of the nanowires compared to the conductivity of the sidewalls during or after creation of the nanowires.

Abstract: An epitaxial structure including an epitaxial substrate, a first buffer layer, a first pattern mask layer, a second buffer layer and a second pattern mask layer. The first buffer layer is disposed on the epitaxial substrate. The first pattern mask layer is disposed on the first buffer layer. The second buffer layer is disposed on the first pattern mask layer and a part of the first buffer layer. The second pattern mask layer is disposed on the second buffer layer. A projection of the first pattern mask layer projected on the first buffer layer and a projection of the second pattern mask layer projected on the first buffer layer cover at least 70% of the total area of the first buffer layer.

Abstract: An epitaxy base including a substrate and a nucleating layer disposed on the substrate. The nucleating layer is an AlN layer with a single crystal structure. A diffraction pattern of the nucleating layer includes a plurality of dot patterns. Each of the dot patterns is substantially circular, and a ratio between lengths of any two diameters perpendicular to each other on each of the dot patterns ranges from approximately 0.9 to approximately 1.1. A semiconductor light emitting device, a manufacturing method of the epitaxy base, and a manufacturing method of the light emitting semiconductor device are further provided.

Abstract: In an example, the present invention provides a light-emitting device configured to emit electromagnetic radiation in a range of 210 to 360 nanometers. The device has a substrate member comprising a surface region. The device has a thickness of AlGaN material formed overlying the surface region and an aluminum concentration characterizing the AlGaN material having a range of 0 to 100%. The device has a boron doping concentration characterizing the AlGaN material having a range between 1e15 to 1e20 atoms/centimeter3.

Abstract: A semiconductor device including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer which are sequentially stacked; a first conductivity type upper electrode portion and a first conductivity type lower electrode portion disposed to correspond to each other with the first conductivity type semiconductor layer interposed therebetween; a second conductivity type upper electrode portion and a second conductivity type lower electrode portion disposed to correspond to each other with the first and second conductivity type semiconductor layers interposed therebetween; and a second conductivity type electrode connection portion electrically connecting the second conductivity type upper electrode portion and the second conductivity type lower electrode portion.

Abstract: A light emitting device includes a light emitting structure having a plurality of light emitting regions including a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode in one of the light emitting regions, a second electrode in another of the light emitting regions, and at least one connection electrode to sequentially connect the light emitting regions in series. The light emitting regions connected in series are divided into 1st to ith light emitting region groups. Areas of light emitting regions that belong to different groups are different. An area of a light emitting region which is more frequently used among the plurality of light emitting regions is larger than an area of a light emitting region which is less frequently used among the plurality of light emitting regions.

Abstract: A vertical type light emitting diode includes a nitride semiconductor having a p-n conjunction structure with a transparent material layer formed on a p type clad layer, the transparent material layer having a refractive index different from that of the p type clad layer and having a pattern structure of mesh, punched plate, or one-dimensional grid form, etc. A reflective metal electrode layer is formed on the transparent material layer as a p-electrode. A stereoscopic pattern is formed in the transparent material layer and the p-electrode deposited, and thereby forming the pattern in the p-electrode. Depositing the p-electrode on only 10 to 70% of the upper portion of the p type clad layer in an ultraviolet ray light emitting diode such that an area where the p type clad layer is exposed is wide increases the transmittance of ultraviolet rays through an area where the p-electrode is not deposited.

Abstract: A light emitting diode includes: a substrate; an n-type semiconductor layer disposed on the substrate; an active layer disposed on the n-type semiconductor layer; a p-type semiconductor layer disposed on the active layer; a first electrode disposed on the p-type semiconductor layer and made of a metal oxide; a second electrode disposed on the first electrode and made of graphene; a p-type electrode disposed on the second electrode; and an n-type electrode disposed on the n-type semiconductor layer, wherein a work function of the first electrode is less than a work function of the p-type semiconductor layer, but is greater than a to work function of the second electrode.

Abstract: A semiconductor light emitting device includes a package body having first and second surfaces being opposed to each other, first and second external terminal blocks disposed in opposite end portions of the package body, respectively, and having portions exposed to surfaces of the package body, respectively. A wavelength converting material layer is disposed between the first and second external terminal blocks and has a first surface substantially coplanar with the first surface of the package body, and a second surface opposing the first surface of the wavelength converting material layer. A LED chip is disposed package body on at least a portion of the second surface of the wavelength converting material layer between the first and second external terminal blocks within the package body.

Abstract: A method of fabricating a light-emitting device package includes preparing a carrier including a first surface and a second surface disposed opposite the first surface, forming a phosphor layer on the first surface of the carrier, emitting first light from a test light-emitting device toward the second surface of the carrier, analyzing second light passing through the phosphor layer, and determining a thickness of the phosphor layer based on the analysis.

Abstract: In accordance with certain embodiments, semiconductor dies are embedded within polymeric binder to form, e.g., freestanding white light-emitting dies and/or composite wafers containing multiple light-emitting dies embedded in a single volume of binder.

Abstract: An optoelectronic semiconductor component includes a luminescent diode chip including a radiation passage face through which primary electromagnetic radiation leaves the luminescent diode chip when in operation, and a filter element that covers the radiation passage face of the luminescent diode chip at least in places, wherein the filter element prevents passage of some of the primary electromagnetic radiation in the UV range, and the filter element consists of a II-VI compound semiconductor material.

Abstract: A light emitting device includes: a mounting board; an adhesive member disposed on the mounting board and having a first surface adjacent to the mounting board and a second surface opposing the first surface; and a light emitting element disposed on the second surface of the adhesive member. The second surface of the adhesive member may have a first region on which the light emitting element is disposed and a second region on which a scattering pattern is provided to scatter light emitted by the light emitting element.

Abstract: An LED package is described that acts as a sub-mount between a printed circuit board and an LED. The sub-mount includes a laminate to thermally isolate the LED from the PCB while providing a thermal heat dissipative sink for the LED.

Abstract: LED chip packaging assembly that facilitates an integrated method for mounting LED chips as a group to be pre-wired to be electrically connected to each other through a pattern of extendable metal wiring lines is provided. LED chips which are electrically connected to each other through extendable metal wiring lines, replace pick and place mounting and the wire bonding processes of the LED chips, respectively. Wafer level MEMS technology is utilized to form parallel wiring lines suspended and connected to various contact pads. Bonding wires connecting the LED chips are made into horizontally arranged extendable metal wiring lines which can be in a spring shape, and allowing for expanding and contracting of the distance between the connected LED chips. A tape is further provided to be bonded to the LED chips, and extended in size to enlarge distance between the LED chips to exceed the one or more prearranged distances.

Abstract: A display device includes a light source which comprises a first line receiving power, a second line connected to a ground terminal, a plurality of light source units generating light, first to k-th conductive patterns connecting the light source units to the first and second lines in series, where k is a natural number greater than 1, and a discharge pattern disposed adjacent to the conductive patterns and the second line, and leading static electricity flowing into the conductive patterns to the second line.

Abstract: An LED leadframe or LED substrate includes a main body portion having a mounting surface for mounting an LED element thereover. A reflection metal layer serving as a reflection layer for reflecting light from the LED element is disposed over the mounting surface of the main body portion. The reflection metal layer comprises an alloy of platinum and silver or an alloy of gold and silver. The reflection metal layer efficiently reflects light emitted from the LED element and suppresses corrosion due to the presence of a gas, thereby capable of maintaining reflection characteristics of light from the LED element.

Abstract: Provided is a thermoelectric material satisfying (MX)1+a(TX2)n and having a superlattice structure, wherein M is at least one element selected from the group consisting of Group 13, Group 14, and Group 15, T is at least one element selected from Group 5, X is a chalcogenide element, a is a real number satisfying 0<a<1, and n is a natural number of 1 to 3.

Abstract: Provided are a composition for forming a thermoelectric conversion layer, the composition having excellent thermoelectric characteristics; a thermoelectric conversion element, in which the composition is used to form a thermoelectric conversion layer; and a thermoelectric power generating component. The composition for forming a thermoelectric conversion layer includes inorganic particles having an average particle size of 1.0 ?m or less; a carrier transport material which satisfies at least one of the condition that the mobility is 0.001 cm2/Vs or more and the condition that the carrier density is 1×1010 cm?3 to 1×1021 cm?3 when the band gap of the inorganic particles is 1.5 eV or less; and a material for a thermal excitation source which is an organic material satisfying the condition that the band gap is 1.5 eV or less when the band gap of the inorganic particles is more than 1.5 eV.

Abstract: A thermoelectric generator includes a tapered inlet manifold including first and second non-parallel sides; first and second pluralities of outlet manifolds; and thermoelectric generating units (TGUs) each including a hot-side heat exchanger (HHX) with inlet and outlet; a cold-side heat exchanger (CHX); and thermoelectric devices arranged between the HHX and CHX. The inlets of some of the HHXs receive exhaust gas from the first side of the tapered inlet manifold and the outlets of those HHXs are coupled to outlet manifolds of the first plurality of outlet manifolds. The inlets of other of the HHXs receive exhaust gas from the second side of the tapered inlet manifold and the outlets of those HHXs are coupled to outlet manifolds of the second plurality of outlet manifolds. The thermoelectric devices can generate electricity responsive to a temperature differential between the exhaust gas and the CHXs.

Abstract: A method of manufacturing a thermoelectric module including a substrate and at least one conductive or semiconductor polymer film deposited on a surface of the substrate, the method including a step of manufacturing the conductive polymer film independently from the surface of the substrate and transferring the conductive polymer film onto the surface of the substrate. The transfer comprises: immersing the conductive polymer film in a transfer bath to obtain a conductive polymer film which is solvated, self-supporting, and capable of matching the shape of the substrate surface; applying the conductive polymer film in its solvated state on the substrate to match the shape of the surface thereof; and drying the solvated conductive polymer film.

Abstract: A piezoelectric device is a fired body including a body part 10 and external electrodes 21 and 22. A surface of the side electrode 22 is comprised only of a material for the side electrode 22. On a surface of the surface electrode 21 or a surface of a connection portion where the surface electrode 21 and the side electrode 22 are connected to each other, a protrusion h extending along a direction along which the connection portion extends and sticking out in a thickness direction of the surface electrode 21 is provided. A region, on the surface of the surface electrode 21, farther from the connection portion than the protrusion h is interspersed with a plurality of exposed portions in each of which a surface of a ceramic material having lower solder wettability than a material for the surface electrode 21 is exposed.

Abstract: A resonator includes a resonator element including a substrate gradually increasing in thickness from an outer edge toward a center, excitation electrodes respectively disposed on both principal surfaces of the substrate, and a pair of electrode pads electrically connected to the excitation electrodes, disposed on at least one of the both principal surfaces, and disposed on one end side of the substrate, and a second substrate as a base, the pair of electrode pads are bonded to the second substrate via respective first bonding members, two places of the other end of the substrate on the opposite side to the one end are bonded to the second substrate via respective second bonding members, and a distance S1 between the two first bonding members, and a distance S2 between the two second bonding members fulfill S1<S2.

Abstract: An electromechanical conversion element includes a lower electrode formed directly or indirectly on a substrate or a base film; an electromechanical conversion film formed on the lower electrode and including a piezoelectric body having a perovskite crystal structure preferentially oriented with a {n00} plane where n is a positive integer; and an upper electrode formed on the electromechanical conversion film. A diffraction peak at a position 2? at which a diffraction intensity has a maximum value and which corresponds to a (X00) plane or a (00X) plane, X being 1 or 2, obtained by ?-2? measurement in X-ray diffraction measurement, shows a trapezoidal peak shape and has two or more bending points.

Abstract: A layered body including a crystalline polymeric piezoelectric body, which is molecularly oriented, and a surface layer, in which the relationship between the tensile modulus Ec (GPa) and the thickness d (?m) satisfies the following Formula (A): 0.6?Ec/d ??Formula (A).

Abstract: A device includes a seed layer, a magnetic track layer disposed on the seed layer, an alloy layer disposed on the magnetic track layer, a tunnel barrier layer disposed on the alloy layer, a pinning layer disposed on the tunnel barrier layer, a synthetic antiferromagnetic layer spacer disposed on the pinning layer, a pinned layer disposed on the synthetic antiferromagnetic spacer layer and an antiferromagnetic layer disposed on the pinned layer, and another device includes a seed layer, an antiferromagnetic layer disposed on the seed layer, a pinned layer disposed on the antiferromagnetic layer, a synthetic antiferromagnetic layer spacer disposed on the pinned layer, a pinning layer disposed on the synthetic antiferromagnetic layer spacer, a tunnel barrier layer disposed on the pinning layer, an alloy layer disposed on the tunnel barrier layer and a magnetic track layer disposed on alloy layer.

Abstract: A magnetoresistive device includes a substrate and an electrically insulating layer arranged over the substrate. The magnetoresistive device further includes a first free layer embedded in the electrically insulating layer and a second free layer embedded in the electrically insulating layer. The first free layer and the second free layer are separated by a portion of the electrically insulating layer.

Abstract: According to one embodiment, a magnetoresistive element includes a first magnetic layer having a perpendicular and invariable magnetization, a first nonmagnetic insulating layer on the first magnetic layer, a second magnetic layer on the first nonmagnetic insulating layer, the second magnetic layer having a perpendicular and variable magnetization, a second nonmagnetic insulating layer on the second magnetic layer, and a nonmagnetic conductive layer on the second nonmagnetic insulating layer. The second nonmagnetic insulating layer includes a first metal oxide with a predetermined element. The first nonmagnetic insulating layer includes a second metal oxide.

Abstract: A multilayered magnetic thin-film stack including a tunneling barrier layer; a magnetic finned layer formed on a first surface of the tunneling barrier layer; and a magnetic free layer formed on a second surface of the tunneling barrier layer, which is opposite to the first surface, wherein at least one of the magnetic finned layer and the magnetic free layer includes a FeZr alloy layer and a first magnetic layer having a (001) bcc structure between the FeZr alloy layer and the tunneling barrier layer.

Abstract: According to one embodiment, a method of manufacturing an insulating film, includes forming an insulating film on a substrate by sputtering, measuring a thickness of the insulating film at a plurality of locations, and irradiating a surface portion of the insulating film with X rays or ions, based on the measured thickness.

Abstract: Provided are thin resistive devices and related methods, the devices featuring a resistance-switchable active layer having a thickness in the range of from about 1 to about 5 nm and an insulating layer surmounting the resistance-switchable active layer, the insulating layer having a thickness in the range of from about 0.5 nm to about 5 nm.

Abstract: Provided are methods of forming electric devices by effecting application of a stress to the device so as to deform the device within the device's elastic limit and to place the device into a new electric—e.g., resistance—state.

Abstract: A condensed-cyclic compound represented by Formula 1 below, and an organic light-emitting diode including the condensed-cyclic compound. wherein R1 through R6, Ar5 and Ar6, and X1 through X10 are defined as in the specification.

Abstract: The present invention discloses an organic semiconductor formulation comprising an organic semiconductor (OSC) and an organic phosphorous-containing additive (OPA) capable of enhancing the n-type performance of the organic semiconductor. The semiconductor formulation disclosed herein is suitable for producing n-type semiconductor thin films for use in a variety of electronic, optical, or optoelectronic devices such as organic thin film transistors, organic photovoltaics, and organic light emitting devices.

Abstract: An electronic device, including an organic semiconductor, the organic semiconductor having a first polymer having a first molecular weight and a first length, and a second polymer having a second molecular weight and a second length, wherein the second length is longer than the first length.

Abstract: In one embodiment, a polymer includes a repeating unit represented by a formula (1) shown below. A weight-average molecular weight of the polymer is in a range of 3000 or more to 1000000 or less. R1 indicates a monovalent group selected from hydrogen, a substituted or unsubstituted alkyl group, a substituted or unsubstituted aromatic group, and a substituted or unsubstituted hetero-aromatic group. R2, R3, and R4 indicate independently a monovalent group selected from hydrogen, halogen, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted aromatic group, and a substituted or unsubstituted hetero-aromatic group. X, Y, and Z indicate independently an atom selected from O, S, and Se.

Abstract: Disclosed is an organic electroluminescent device, wherein the light-emitting layer is composed of a non-doped neutral free-radical electroluminescent material or a neutral free-radical electroluminescent material doped in a matrix material. The luminescence of the device is from the photons emitted from the transition of doublet electrons in the outer molecular orbit of the neutral free-radical electroluminescent material from an excited state to the ground state; since there is no limitation on spin-forbidden, the upper limit of the internal quantum efficiency of the device is 100%. The neutral free-radical electroluminescent material used in the device is 1,3-bis(diphenylene)-2-phenylallyl free radicals and derivatives thereof; tri(2,4,6-trichlorophenyl)methyl free radicals and derivatives thereof; (3,5-dichloro-4-pyridyl)bis(2,4,6-trichlorophenyl)methyl free radicals and derivatives thereof; (2,4,6-trichloro-5-pyrimidinyl)bis(2,4,6-trichlorophenyl)methyl free radicals and derivatives thereof.

Abstract: A compound for an organic electroluminescent device is represented by the following General Formula (1). X in General Formula (1) is selected from the following General Formulae (2), (3) and (4).

Abstract: An organic electroluminescent device including an anode; an emission layer; an anode-side hole transport layer between the anode and the emission layer, the anode-side hole transport layer including an anode-side hole transport material, and being doped with an electron accepting material; an intermediate hole transport material layer between the anode-side hole transport layer and the emission layer, the intermediate hole transport material layer including an intermediate hole transport material; and an emission layer-side hole transport layer between the intermediate hole transport material layer and the emission layer and adjacent to the emission layer, the emission layer-side hole transport layer including an emission layer-side hole transport material represented by the following General Formula (1):

Abstract: An organic electroluminescent device includes an anode, an emission layer, a first hole transport layer between the anode and the emission layer, the first hole transport layer including a first hole transport material and an electron accepting material doped into the first hole transport material, and a second hole transport layer between the anode and the emission layer, the second hole transport layer including a second hole transport material represented by Formula 2:

Abstract: A material for an organic electroluminescent device according to embodiments of the present disclosure is represented by the following Formula (1). The material for an organic electroluminescent device may have high emission efficiency and the organic electroluminescent device including the material may have improved characteristics.

Abstract: An organic electroluminescent (EL) material and an organic EL device, the material being represented by the following Formula 1:

Abstract: Provided are a compound represented by Formula 1 and an organic light-emitting device including the same: wherein substituents of Formula 1 are understood by referring to the description provided in the detailed description.

Abstract: A composition formed of a mixture of a first compound and a second compound wherein the first compound has a different chemical structure than the second compound. The first compound and the second compound are both organic compounds. At least one of the first compound and the second compound contains at least one less abundant stable isotope atom. The first compound has an evaporation temperature T1 and the second compound has an evaporation temperature T2 where both T1 and T2 are between 100 to 400° C. and the absolute value of T1?T2 is less than 20° C. The first compound has a concentration C1 in said mixture and a concentration C2 in a film formed by evaporating said mixture in a high vacuum deposition tool with a chamber base pressure between 1×10?6 Torr to 1×10?9 Torr, at a 2 ?/sec deposition rate on a surface positioned at a predefined distance away from the mixture being evaporated; and wherein absolute value of (C1?C2)/C1 is less than 5%.

Abstract: Provided are a condensed cyclic compound of Formula 1 and an organic light-emitting device including the same