Abstract: A scalable method for the manufacture of narrow, bright, monodisperse, photo-luminescent quantum dots prepared in the presence of a Group II-VI molecular seeding cluster fabricated in situ from a zinc salt and a thiol or selenol compound. Exemplary quantum dots have a core containing indium, phosphorus, zinc and either sulfur or selenium.

Abstract: A semiconductor light-emitting device including a substrate, a first-type doped semiconductor structure, a light-emitting layer, and a second-type doped semiconductor layer is provided. The first-type doped semiconductor structure is located on the substrate and includes a base and multi-section rod structures extended upward from the base. Each multi-section rod structure includes rods and at least one connecting portion. The connecting portion connects adjacent rods along a first direction, wherein the first direction is perpendicular to the base and points to the connecting portion from the base. Cross-section areas of different rods on a reference plane parallel to the substrate are different, and cross-section areas of the connecting portion on the reference plane decrease along the first direction. The light-emitting layer is located on sidewalls of the rods. The second-type doped semiconductor layer is located on the light-emitting layer.

Abstract: There is provided a semiconductor light emitting device including: a first conductivity-type semiconductor base layer; a mask layer disposed on the first conductivity-type semiconductor base layer and including a graphene layer with a plurality of openings exposing the first conductivity-type semiconductor base layer; and a plurality of light emitting nanostructures disposed on the openings and each including a first conductivity-type semiconductor core, an active layer, and a second conductivity-type semiconductor layer.

Abstract: A light emitting device includes a substrate, a light extraction layer provided over the substrate and a light emitting structure provided over the light extraction layer. The light extraction layer has a refraction index higher than a refraction index of the substrate and lower than a refraction index of the light emitting structure. The light extraction layer has a first region contacting the substrate and a second region provided opposite to the first region. The first region has a greater cross-sectional area than a cross-sectional area of the second region.

Abstract: In the case where a still image is displayed on a pixel portion having a pixel, for example, a driver circuit for controlling writing of an image signal having image data to the pixel portion stops by stopping supply of power supply voltage to the driver circuit, and writing of an image signal to the pixel portion is stopped. After the driver circuit stops, supply of power supply voltage to a panel controller for controlling the operation of the driver circuit and an image memory for storing the image data is stopped, and supply of power supply voltage to a CPU for collectively controlling the operation of the panel controller, the image memory, and a power supply controller for controlling supply of power supply voltage to a variety of circuits in a semiconductor display device is stopped.

Abstract: The present invention discloses a method for manufacturing a solid state light emitting device having a plurality of light-sources, the method comprising the steps of: providing a substrate having a growth surface; providing a mask layer on the growth surface, the mask layer having a plurality of openings through which the growth surface is exposed, wherein a largest lateral dimension of each of said openings is less than 0.

Abstract: According to one embodiment, a semiconductor light emitting device includes: first and second semiconductor layers, a light emitting part, and an In-containing layer. The first semiconductor layer is formed on a silicon substrate via a foundation layer. The light emitting part is provided on the first semiconductor layer, and includes barrier layers and a well layer provided between the barrier layers including Ga1-z1Inz1N (0<z1?1). The second semiconductor layer is provided on the light emitting part. The In-containing layer is provided at at least one of first and second positions. The first position is between the first semiconductor layer and the light emitting part. The second position is between the second semiconductor layer and the light emitting part. The In-containing layer includes In with a composition ratio different from the In composition ratio z1 and has a thickness 10 nm to 1000 nm.

Abstract: The disclosure relates to a manufacturing method comprising the formation of elemental LED or photovoltaic structures on a first substrate, each comprising at least one p-type layer, an active zone and an n-type layer, formation of a first planar metal layer on the elemental structures, provision of a transfer substrate comprising a second planar metal layer, assembly of the elemental structures with the transfer substrate by bonding of the first and second metal layers by molecular adhesion at room temperature, and removal of the first substrate.

Abstract: A method and structure for integrating gallium nitride into a semiconductor substrate. The method may also include means for isolating the gallium nitride from the semiconductor substrate.

Abstract: A vertical topology light emitting device comprises a metal support structure; an adhesion structure on the metal support structure, wherein the adhesion structure comprises a first adhesion layer and a second adhesion layer on the first adhesion layer; a metal layer on the adhesion structure, wherein the adhesion structure is thicker than the metal layer; a GaN-based semiconductor structure on the metal layer, wherein the GaN-based semiconductor structure has a thickness less than 5 micrometers; a multi-layered electrode structure on the GaN-based semiconductor structure; and a protective layer on a side surface and a top surface of the GaN-based semiconductor structure, wherein the protective layer is further disposed on the multi-layered electrode structure.

Abstract: The light-emitting device, according to one embodiment, comprises: a light-emitting structure including a first conductive semiconductor layer, an active layer formed beneath the first conductive semiconductor layer, and a second conductive semiconductor layer formed beneath the active layer; a reflective electrode arranged beneath the light-emitting structure and having a first region beneath the second conductive semiconductor layer and a second region extending from the first region and penetrating through the second conductive semiconductor layer and the active layer; and an electrode electrically connected to the first conductive semiconductor layer.

Abstract: A transparent conductive layer structure for an LED is provided. The LED includes a reflecting layer, an N-type electrode, an N-type semiconductor layer, a light emitting layer, a P-type semiconductor layer, a current block layer, a transparent conductive layer and a P-type electrode that are stacked on a substrate. The current block layer is disposed between and separates the P-type electrode and the P-type semiconductor layer. The transparent conductive layer is disposed between the P-type electrode and the current block layer, and connects to the P-type electrode and the P-type semiconductor layer. At a region corresponding to the P-type electrode, a plurality of holes are disposed at the transparent conductive layer to reduce an area of and hence an amount of light absorbed by the transparent conductive layer, thereby increasing light extraction efficiency of excited light from the light emitting layer and enhancing light emitting efficiency of the LED.

Abstract: In a method according to embodiments of the invention, a light emitting structure comprising a plurality of light emitting diodes (LEDs) is provided. Each LED includes a p-contact and n-contact. A first mount and a second mount are provided. Each mount includes anode pads and cathode pads. The anode pads are aligned with the p-contacts and the cathode pads are aligned with the n-contacts. The method further includes mounting the light emitting structure on one of the first and second mounts. An electrical connection on the first mount between the plurality of LEDs differs from an electrical connection on the second mount between the plurality of LEDs. The first mount is operated at a different voltage than the second mount.

Abstract: In one aspect, structures are provided comprising: a substrate having a first surface and a second surface; and a polymeric layer disposed on the first surface of the substrate, the polymeric layer comprising a polymer and a plurality of light-emitting nanocrystals; the polymeric layer having a patterned surface, the patterned surface having a patterned first region having a first plurality of recesses and a patterned second region having a second plurality of recesses, wherein the plurality of recesses in each region has a first periodicity in a first direction, and a second periodicity in a second direction which intersects the first direction, wherein the first periodicity of the first region is different from the first periodicity of the second region.

Abstract: To provide an illumination method and a light-emitting device which are capable of achieving, under an indoor illumination environment where illuminance is around 5000 lx or lower when performing detailed work and generally around 1500 lx or lower, a color appearance or an object appearance as perceived by a person, will be as natural, vivid, highly visible, and comfortable as though perceived outdoors in a high-illuminance environment, regardless of scores of various color rendition metric. Light emitted from the light-emitting device illuminates an object such that light measured at a position of the object satisfies specific requirements. A feature of the light-emitting device is that light emitted by the light-emitting device in a main radiant direction satisfies specific requirements.

Abstract: In accordance with certain embodiments, phosphor chips are formed and subsequently attached to light-emitting elements.

Abstract: By using a light emitting device including an insulating substrate and a light emitting unit formed on the insulating substrate, the light emitting unit including: a plurality of linear wiring patterns disposed on the insulating substrate in parallel with one another, a plurality of light emitting elements that are mounted between the wiring patterns while being electrically connected to the wiring patterns, and a sealing member for sealing the light emitting elements, as well as a method for manufacturing thereof, it becomes possible to provide a light emitting device that achieves sufficient electrical insulation and has simple manufacturing processes so that it can be manufactured at a low cost, and a method for manufacturing the same.

Abstract: Networks of semiconductor structures with fused insulator coatings and methods of fabricating networks of semiconductor structures with fused insulator coatings are described. In an example, a semiconductor structure includes an insulator network. A plurality of discrete semiconductor nanocrystals is disposed in the insulator network. Each of the plurality of discrete semiconductor nanocrystals is spaced apart from one another by the insulator network.

Abstract: A light emitting device includes a substrate and a light emitting structure including a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer provided in a first direction on the substrate. A first electrode layer is provided over the first conductive type semiconductor layer, and a second electrode layer is provided in a second direction over the second conductive type semiconductor layer. The second electrode layer has an energy band gap wider than an energy band gap of the active layer.

Abstract: A light source includes LED dies that are flip-chip mounted on a flexible plastic substrate. The LED dies are attached to the substrate using an asymmetric conductor material with deformable conducting particles sandwiched between surface mount contacts on the LED dies and traces on the substrate. A diffusively reflective material containing light scattering particles is used instead of expensive reflective cups to reflect light upwards that is emitted sideways from the LED dies. The diffusively reflective material is dispensed over the top surface of the substrate and contacts the side surfaces of the dies. The light scattering particles are spheres of titanium dioxide suspended in silicone. The light source is manufactured in a reel-to-reel process in which the asymmetric conductor material and the diffusively reflective material are cured simultaneously. A silicone layer of molded lenses including phosphor particles is also added over the mounted LED dies in the reel-to-reel process.

Abstract: The present invention provides an optical array module that includes a plurality of semiconductor devices mounted on a thermal substrate formed with a plurality of openings that function as micro-reflectors, wherein each micro-reflector includes a layer of reflective material to reflect light. Such material preferably is conductive so as to provide electrical connection for its associated semiconductor device.

Abstract: A flexible substrate member which can prevent breakage due to bending, regardless of a shape of a metal pattern, and a light emitting device which employs the flexible substrate. The flexible substrate member includes a plurality of metal wirings disposed on an insulating substrate which are spaced apart from each other via a groove portion. The groove portion includes an intersection region where a first groove portion and a second groove portion are intersected. The metal wirings includes a first metal wiring and a second metal wiring which are demarcated via the first groove portion in the intersection region, and a third metal wiring which is demarcated via the second groove portion with respect to the first metal wiring and the second metal wiring. The third metal wiring includes a projection which projects on an extension line of the first groove portion.

Abstract: A method for manufacturing a light emitting device includes forming a multilayer body including a light emitting layer so that a first surface thereof is adjacent to a first surface side of a translucent substrate. A dielectric film on a second surface side opposite to the first surface of the multilayer body is formed having first and second openings on a p-side electrode and an n-side electrode. A seed metal on the dielectric film and an exposed surface of the first and second openings form a p-side metal interconnect layer and an n-side metal interconnect layer separating the seed metal into a p-side seed metal and an n-side seed metal by removing a part of the seed metal. A resin is formed in a space from which the seed metal is removed.

Abstract: A thermoelectric energy harvester comprises a cyclic energy input terminal supplying heat energy in a first part of the cycle to a thermal storage reservoir through a low thermal resistance generator. During a second part of the cycle, the thermal storage reservoir returns stored heat energy to the environment through an independent thermal circuit and a higher thermal resistance thermoelectric generator.

Abstract: The n-type thermoelectric material has a composition represented by (AaBbCcDt)Co4-yFeySb12. In the composition, 0?a?0.5, 0?b?0.7, 0<c?0.5, a+b+c+t=x, 0.4?x?1.0, 0?y?0.5, a+b>0; Element A is Mg, Ca, Sr and/or Ba; Element B is Y, Sc and/or La to Lu; Element C is Al, Ga and/or In; and Element D is Zn and/or Ti. The AaBbCcDt (=Rx) satisfies Rx=[BadA?1-d]a[YbeB?1-e]b[InfC?1-f]cDt. In the formula, 0<d?1, 0?e?1, 0<f?1, ad+be>0; Element A? is the element A other than Ba; Element B? is the element B other than Yb; and Element C? is the element C other than In. The n-type thermoelectric material contains five or more kinds in total of the element A to the element D.

Abstract: There are provided a multi-layer piezoelectric element that is driven stably for a long period of time without developing cracks in a junction between a metallized layer and a lead member or a stacked body, and an injection device and a fuel injection system provided with the same. A multi-layer piezoelectric element includes a stacked body in which piezoelectric layers and internal electrodes are laminated; a metallized layer disposed on a side surface of the stacked body, the metalized layer being electrically connected to the internal electrodes; and an external electrode member disposed on the metallized layer, with an electrically-conductive adhesive layer interposed therebetween, wherein the electrically-conductive adhesive layer has a plurality of voids configured not to open on a surface thereof which surface is in contact with the metallized layer.

Abstract: The invention relates to actuator module (22) having a piezoceramic multilayer actuator (1) arranged in a casing (23). In order to avoid an increase in conductivity and hence rising leakage current at the actuator surface even after a long period of use, the invention proposes that the casing (23) is hermetically sealed, and a chamber (24) is arranged between the multilayer actuator (1) and the casing (23), which chamber is entirely or partially filled with a medium (21) that chemically transforms and/or binds water.

Abstract: A dielectric elastomer has a film that contains a fluorinated silicone elastomer and has two faces. A coating of a stretchable electrode material is applied to each one of the two faces. The fluorinated silicone elastomer has a modulus of elasticity of maximally 450 kPa. The fluorinated silicone elastomer is a three-dimensionally crosslinked, fluorinated, alkyl group-containing polysiloxane in combination with a fluorinated silicone oil. Alternatively, or in addition, the fluorinated silicone elastomer is a three-dimensional wide-mesh crosslinked, fluorinated, alkyl-group containing polysiloxane whose wide mesh property has been effected by a chain length extension by addition of a chain-shaped silicone molecule containing two Si—H groups to an alkenyl group-containing polysiloxane molecule.

Abstract: Piezoelectric devices are provided. A device can include a top electrode, a first piezoelectric layer having an upper surface disposed on a lower surface of the top electrode, a first center electrode having an upper surface disposed on a lower surface of the first piezoelectric layer, an insulating layer having an upper surface disposed on a lower surface of the first center electrode, a second center electrode having an upper surface disposed on a lower surface of the insulating layer, a second piezoelectric layer having an upper surface disposed on a lower surface of the second center electrode, and a bottom electrode having an upper surface disposed on a lower surface of the second piezoelectric layer. The insulating layer can be positioned substantially at a vertical center of the piezoelectric device. The first center electrode can be electrically connected to the second center electrode.

Abstract: The present invention relates to a magnetic memory device which additionally comprises a free magnetic layer constituting a horizontal direction variable magnetization layer having a fixed saturation magnetization value, whereby a switching current is markedly reduced as compared with conventional magnetic layers such that a high degree of integration of the device can be achieved and it is possible to lower a critical current density necessary for magnetization reversal thereby reducing the power consumption of the device. Also, a stray field effect occurring from a fixed magnetic layer is reduced such that a written magnetization data is thermally stable.

Abstract: A method and system for providing a magnetic junction usable in a magnetic device are described. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. At least one of the pinned layer and the free layer includes a magnetic substructure. The magnetic substructure includes at least two magnetic layers interleaved with at least one insertion layer. Each of the at least one insertion layer includes at least one of Bi, W, I, Zn, Nb, Ag, Cd, Hf, Os, Mo, Ca, Hg, Sc, Y, Sr, Mg, Ti, Ba, K, Na, Rb, Pb, and Zr. The at least two magnetic layers are magnetically coupled.

Abstract: Provided is a storage cell that makes it possible to improve TMR characteristics, a storage device and a magnetic head that include the storage cell. The storage cell includes a layer structure including a storage layer in which a direction of magnetization is varied in correspondence with information, a magnetization pinned layer having magnetization that is perpendicular to a film surface and serves as a reference of information stored in the storage layer, and an intermediate layer that is provided between the storage layer and the magnetization pinned layer and is made of a nonmagnetic body. Carbon is inserted in the intermediate layer, and feeding a current in a laminating direction of the layer structure allows the direction of magnetization in the storage layer to be varied, to allow information to be recorded in the storage layer.

Abstract: A thin film magnetoresistive sensor for detecting a magnetic field components perpendicular and parallel to the plane of the sensor substrate is disclosed. The sensing element comprises a free layer, a reference layer, and a spacer layer between the free layer and the reference layer. The easy-axis magnetization, which is inherent to the material of the free layer, is arranged to be perpendicular to the plane of the sensor substrate. The magnetization direction of the reference layer is confined to a direction parallel to the substrate plane. The reference layer consists of a ferromagnetic layer exchange coupled to an antiferromagnetic layer, or consists of a ferromagnetic layer having a higher coercive force than that of the free layer. The spacer layer is composed of an insulating material or a conductive material. The magnetoresistive sensor further includes an array of aforementioned sensing elements coupled to an electronic device in order to provide three-axis sensing.

Abstract: A MTJ for a spintronic device includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/Ni)n composition or the like where n is from 2 to 30. The seed layer is preferably NiCr, NiFeCr, Hf, or a composite thereof with a thickness from 10 to 100 Angstroms. Furthermore, a magnetic layer such as CoFeB may be formed between the laminated layer and a tunnel barrier layer to serve as a transitional layer between a (111) laminate and (100) MgO tunnel barrier. There may be a Ta insertion layer between the CoFeB layer and laminated layer to promote (100) crystallization in the CoFeB layer. The laminated layer may be used as a free layer in a MTJ. Annealing between 300° C. and 400° C. may be used to further enhance PMA in the laminated layer.

Abstract: Perpendicular spin transfer torque memory (STTM) devices with enhanced stability and methods of fabricating perpendicular STTM devices with enhanced stability are described. For example, a material layer stack for a magnetic tunneling junction includes a fixed magnetic layer. A dielectric layer is disposed above the fixed magnetic layer. A free magnetic layer is disposed above the dielectric layer. A conductive oxide material layer is disposed on the free magnetic layer.

Abstract: Some embodiments include a magnetic tunnel junction which has a conductive first magnetic electrode containing magnetic recording material, a conductive second magnetic electrode spaced from the first electrode and containing magnetic reference material, and a non-magnetic insulator material between the first and second electrodes. The magnetic recording material of the first electrode includes a set having an iridium-containing region between a pair of non-iridium-containing regions. In some embodiments, the non-iridium-containing regions are cobalt-containing regions.

Abstract: A system and method for fabricating a memory array device. An example memory array device includes a plurality of memory cells, each including a FET over a substrate and a memory element over the FET. Each memory element includes a plurality of epitaxially grown memory element layers. The memory elements formed utilizing two etches through all epitaxially grown layers. Each of these etches can be split to two separate processes specific to CMOS transistor etch and to memory element etch. The memory array device includes a plurality of gate conductors configured along a first axis, in parallel. Each FET of the memory cells adjacent to two gate conductors. The memory array device includes a plurality of bit lines configured along a second axis, in parallel, and electrically coupled to a plurality of memory elements along the second axis.

Abstract: The present invention provides a memory structure including a resistance-changing storage element, which enables a reset operation with a reset gate and in which cross-sectional areas of a resistance-changing film and a lower electrode in a current-flowing direction can be decreased.

Abstract: A memristor has a first electrode, a second electrode parallel to the first electrode, and a switching layer disposing between the first and second electrodes. The switching layer contains a conduction channel and a reservoir zone. The conduction channel has a Fermi glass material with a variable concentration of mobile ions. The reservoir zone is laterally disposed relative to the conduction channel, and functions as a source/sink of mobile ions for the conduction channel. In the switching operation, under the cooperative driving force of both electric field and thermal effects, the mobile ions are moved into or out of the laterally disposed reservoir zone to vary the concentration of the mobile ions in the conduction channel to change the conductivity of the Fermi glass material.

Abstract: An electronic device includes a semiconductor memory that includes: an inter-layer dielectric layer including a hole over a substrate; a first nitride layer disposed on sidewalls of the hole; a selector disposed in a bottom portion of the hole and over the first nitride layer on the sidewalls of the hole; a stacked structure including a variable resistance pattern disposed over a lower structure including the selector; and a second nitride layer disposed in an upper portion and on sidewalls of the stacked structure.

Abstract: Switching device structures and methods are described herein. A switching device can include a vertical stack comprising a material formed between a first and a second electrode. The switching device can further include a third electrode coupled to the vertical stack and configured to receive a voltage applied thereto to control a formation state of a conductive pathway in the material between the first and the second electrode, wherein the formation state of the conductive pathway is switchable between an on state and an off state.

Abstract: A resistive random access memory (RRAM) including a substrate, a dielectric layer, memory cells and an interconnect structure is provided. The dielectric layer is disposed on the substrate. The memory cells are vertically and adjacently disposed in the dielectric layer, and each of the memory cells includes a first electrode, a second electrode and a variable resistance structure. The second electrode is disposed on the first electrode. The variable resistance structure is disposed between the first electrode and the second electrode. In two vertically adjacent memory cells, the first electrode of the upper memory cell and the second electrode of the lower memory cell are disposed between the adjacent variable resistance structures and isolated from each other. The interconnect structure is disposed in the dielectric layer and connects the first electrodes of the memory cells.

Abstract: Light emitted within an organic EL device is effectively utilized, and a pixel is provided for improving the extraction efficiency of the light. Light extraction is efficiency is improved without increasing a current by effectively utilizing guided wave light which is a cause of the loss of light emitted by an organic EL device. In order to achieve this, a stepped portion is arrange in an insulating layer provided over a lower layer of a first electrode including a light reflecting surface, and a peripheral area of the first electrode is formed so as to contact the stepped portion. The reflecting surface is formed curved towards a second electrode side in the peripheral area of the first electrode from the stepped portion, light guided through the organic EL layer is reflected by the reflecting surface and emitted from the second electrode side.

Abstract: The present disclosure provides a method for fabricating a PEDOT:PSS-based electrode, comprising the steps of: preparing a PEDOT:PSS thin film formed on a substrate; treating the thin film with a solution containing 75-100 vol % of sulfuric acid or a sulfuric acid derivative; separating the thin film from the solution and rinsing the separated thin film; and drying the rinsed thin film at a temperature between 60° C. and 160° C. The present disclosure also provides a PEDOT:PSS-based electrode fabricated by the method, and an organic electronic device including the electrode.

Abstract: A polymer compound is provided for achieving satisfactory brightness even at a low driving voltage when applied to a light-emitting device. A preferred embodiment includes multiple first groups and a block (A) having a structure in which the first groups are linked by a second group represented by formula (0-0), and includes at least one of a group represented by formula (0-1) or a group represented by formula (0-2) as the first group; wherein Ar0 represents an optionally substituted arylene group or divalent aromatic heterocyclic group having a structure different from the first group; n represents an average chain length of Ar0 and equals 1.0 to 8.0; and X11 to X16 and X21 to X25 each represent a carbon atom or a nitrogen atom, where two or three of X11 to X16 are a nitrogen atom and three of X21 to X25 are a nitrogen atom.

Abstract: The present invention relates to polymers comprising one or more (repeating) unit(s) of the formula (I) which are characterized in that Ar1 and Ar1? are independently of each other are an annulated (aromatic) heterocyclic ring system, containing at least one thiophene ring, which may be optionally substituted by one, or more groups, and their use as organic semiconductor in organic devices, especially in organic photovoltaics (solar cells) and photodiodes, or in a device containing a diode and/or an organic field effect transistor. The polymers according to the invention have excellent solubility in organic solvents and excellent film-forming properties. In addition, high efficiency of energy conversion, excellent field-effect mobility, good on/off current ratios and/or excellent stability can be observed, when the polymers according to the invention are used in organic field effect transistors, organic photovoltaics (solar cells) and photodiodes.

Abstract: A photovoltaic cell has an active area formed electron donor-fullerene conjugated molecules. The electron donor is formed of a polymer, which is conjugated with an electron acceptor, such as fullerene. By conjugating the fullerene, such as C60, with electron donor moieties, such as that of the polymer, double channels are formed therebetween, whereby one channel provides hole transport and the other channel provides electron transport. As a result, the electronic coupling between the fullerene and the electron donor moiety leads to increased short-circuit current density (Jsc) and increased open-circuit voltage (Voc), resulting in high power conversion efficacy (PCE) in the solar cell.

Abstract: An organic light emitting diode display including an anode; a cathode facing the anode; and an emission layer between the anode and the cathode, wherein the emission layer includes a compound represented by Chemical Formula 1, below, and a compound represented by Chemical Formula 2, below:

Abstract: An organic compound having a high T1 level is provided. An element emitting phosphorescence in the blue and green regions is provided. An organic compound having a high glass-transition temperature is provided. A light-emitting element, a light-emitting device, an electronic appliance, or a lighting device having high heat resistance is provided. A light-emitting element includes at least a hole-transport layer, a light-emitting layer, and an electron-transport layer between an anode and a cathode. An anthracene compound represented by General Formula (G1) is contained in at least one of the hole-transport layer, the light-emitting layer, and the electron-transport layer.

Abstract: This organic electroluminescent element is manufactured by using an anthracene derivative having a pyridyl aryl group substituted with an alkyl represented by formula (1) as an electron transport material, and satisfies characteristics such as the following in an adequate and well-balanced manner: improves the external quantum efficiency of the light-emitting element, which is generally required by the electron transport material; reduces the drive voltage of the light-emitting element; and increases the life of the element. (In formula (1), Ar is a divalent or trivalent benzene or naphthalene; R is hydrogen or an alkyl with a carbon number of 1 to 6, but all of the Rs never simultaneously form hydrogen; and R1 to R4 are, individually, hydrogen, an alkyl with a carbon number of 1 to 6, a cycloalkyl with a carbon number of 3 to 6, or an aryl with a carbon number of 6 to 20.