Abstract: An optical device substrate includes metal plates and insulating layers formed between the metal plates. Each insulating layer includes a cured insulating layer formed by curing insulating material and an anodized layer merged with each metal plate, the anodized layer formed by anodizing a first metal and a second metal of each metal plate. The first metal and the second metal include a first anodized layer and a second anodized layer, respectively, and are electrically insulated by interfaces including a first interface formed between the first metal and the first anodized layer, a second interface formed between the first anodized layer and the cured insulating layer, a third interface formed between the cured insulating layer and the second metal and a fourth interface formed between the second anodized layer and the second metal.

Abstract: The graphite structure includes a plurality of domains of graphite where a layer body of graphene sheets is curved in domelike, wherein the plurality of domains are arranged in plane, and the domains adjacent each other are in contact with each other.

Abstract: A thermoelectric conversion module has a substrate, a plurality of first electrodes, a plurality of thermoelectric conversion elements 2, a plurality of second electrodes 4, and connectors 42. The plurality of thermoelectric conversion elements 2 are n-type elements, connected in series. The connector 42 is formed as a single unit with the second electrodes 4 and separate from the first electrodes 3. A receptor 33 that accepts the tip of the connector 42 is provided to each of the first electrodes 3. Six element rows 6 of five thermoelectric conversion elements 2 aligned along the X axis are arrayed along the Y axis. The receptors 33 are configured to accept connectors 42 of the same shape whether electrically connecting the thermoelectric conversion elements 2 within the element rows 6 or electrically connecting between adjacent element rows 6. The first electrodes 3 and second electrodes 4 are all the same shape.

Abstract: A thermoelectric device and method based on creating a structure of nanoclusters in a composite metal and insulator material by co-depositing the metal and insulator material and irradiating the composite material to create nanoclusters of metal within the composite material. In one variation, the composite material may be continuously deposited and concurrently irradiated. A further variation based on a multilayer structure having alternate layers of metal/material mixture. The alternate layers have differing metal content. The layer structure is irradiated with ionizing radiation to produce nanoclusters in the layers. The differing metal content serves to quench the nanoclusters to isolate nanoclusters along the radiation track. The result is a thermoelectric device with a high figure of merit. In one embodiment, the multilayer structure is fabricated and then irradiated with high energy radiation penetrating the entire layer structure.

Abstract: A manufacturing process of the thermoelectric conversion element is provided, wherein the system using semiconductor process technology to the construction of the thermoelectric conversion element nanoscale thermoelectric effect to increase, and the use of different type and surface state of the sample to increase the thermoelectric conversion element thermoelectric figure of merit. Through the use of a specific thickness of deposition of nanostructures on a nanoscale roughening of the substrate cannot affect the conductivity of thermoelectric materials under, and also can improve the Seebeck coefficient and lower thermal conductivity in order to significantly enhance the thermoelectric figure of merit.

Abstract: In a method of manufacturing a piezoelectric device, among a +C plane on a +Z axis side of a piezoelectric thin film and a ?C plane on a ?Z axis side of the piezoelectric thin film, the ?C plane on the ?Z axis side of the piezoelectric thin film is etched. Thus, ?Z planes of the piezoelectric thin film on which epitaxial growth is possible are exposed. Ti is epitaxially grown on the ?Z planes of the piezoelectric thin film in the ?Z axis direction such that the crystal growth plane thereof is parallel to the ?Z planes of the piezoelectric thin film. Al is then epitaxially grown on the surface of the Ti electrode in the ?Z axis direction such that the crystal growth plane thereof is parallel to the ?Z planes of the piezoelectric thin film.

Abstract: A system for driving a piezoelectric load includes a direct current (DC) voltage source and a bi-directional DC-to-DC converter having a primary side coupled to the DC voltage source and a secondary side and comprising a control input configured to receive a first control signal configured to control conversion of a first voltage on the primary side of the bi-directional DC-to-DC converter to a second voltage on the secondary side of the bi-directional DC-to-DC converter. The driver system also includes a capacitor coupled to the secondary side of the bi-directional DC-to-DC converter and configured to remove a DC offset of the second voltage and includes a reactive load having a first terminal coupled to the capacitor and a second terminal coupled to the secondary side of the bi-directional DC-to-DC converter.

Abstract: To provide a lead-free piezoelectric material having a high and stable piezoelectric constant in a wide operating temperature range. The piezoelectric material contains a perovskite type metal oxide having the general formula (1), Mn, Mg, (Ba1-xCax)a(Ti1-y-zSnyZrz)O3??(1) (wherein x is in the range of 0.050?x?0.200, y is in the range of 0.010?y?0.040, and z is in the range of 0?z?0.040, provided that x?0.375(y+z)+0.050, and a is in the range of 0.9925+b?a?1.0025+b) wherein the amount b (mol) of Mn on a metal basis per mole of the metal oxide is in the range of 0.0048?b?0.0400, and the Mg content on a metal basis per 100 parts by weight of the metal oxide is 0.100 parts by weight or less.

Abstract: In a piezoelectric ceramic which has an alkali-containing niobate-based perovskite structure in which constituent elements are Li, Na, K, Nb, and O, a Li3NbO4 crystal phase is intentionally deposited on a piezoelectric ceramic having an alkali-containing niobate-based perovskite structure, whereby sintering becomes possible at about 1000° C. rather than at the normally required sintering temperature of 1050° C. or greater.

Abstract: Provided is a piezoelectric composition containing a major component that is a perovskite-type oxide which is represented by the general formula ABO3, which contains no Pb, and which has A-sites containing Bi, Na, and K and B-sites containing Ti. The Ti is partly substituted with a transition metal element Me that is at least one selected from the group consisting of Mn, Cr, Fe, and Co. The content of Bi and the transition metal element Me in the perovskite-type oxide, which is the major component, is 6 mole percent to 43 mole percent in terms of Biu1MeO3.

Abstract: A specific region of a polylactic acid sheet is heated by a microwave. To allow the polylactic acid sheet to exhibit piezoelectricity in the thickness direction of the polylactic acid sheet, a high voltage is applied to the heated polylactic acid sheet in the thickness direction of the polylactic acid sheet, and thereby the screw axes of at least a part of the polylactic acid molecules are relatively aligned with the thickness direction. Then the polylactic acid sheet is rapidly cooled, and thereby the polylactic acid molecules are immobilized. The same step is executed for other regions of the polylactic acid sheet, and thereby piezoelectricity is imparted to a wide area of the polylactic acid sheet in the thickness direction. The resultant piezoelectric sheet is capable of exhibiting a high piezoelectricity in the thickness direction.

Abstract: A method of fabricating an electromechanical transducer film includes applying a precursor solution on a support substrate, heating the substrate at a first temperature to form a ceramic thin-film in amorphous state, applying a sol-gel solution onto the ceramic thin-film, and heating the ceramic thin-film at a second temperature to form an electromechanical transducer thin-film in amorphous state. The method further includes heating the ceramic and transducer thin-films at a third temperature to thermally decompose an organic substance in the sol-gel solution and form a unitary thin-film, processing the unitary thin-film to form a patterned unitary thin-film, modifying an area on which the patterned film is not formed, discharging the sol-gel solution onto a surface of the patterned film by a liquid discharge head to apply the sol-gel solution to the surface of the patterned film, and heating the patterned film at a fourth temperature to crystallize the patterned film.

Abstract: A technique relates to a linear magnetoresistive random access memory (MRAM) device. A linear magnetic tunnel junction structure includes a non-magnetic tunnel barrier on top of a reference layer and a free layer on top of the non-magnetic tunnel barrier, where the linear magnetic tunnel junction structure is in a line. Magnetoresistive random access memory (MRAM) devices are formed of the reference layer, the non-magnetic tunnel barrier, and the free layer, each of the MRAM devices are in the line. Self-aligned contacts are formed on top of the linear magnetic tunnel junction structure, and the self-aligned contacts individually define the MRAM devices. The self-aligned contacts are separated from one another in the line. Bottom conductive vias are underneath the linear magnetic tunnel junction structure. The bottom conductive vias abut the reference layer of the linear magnetic tunnel junction structure.

Abstract: A nanoscale tunnel magneto-resistance (TMR) sensor comprising an in-plane-magnetized reference layer and a free layer comprising interfacial perpendicular anisotropy, wherein the free layer comprises a sensing layer for sensing resistance as a function of applied magnetic field and is tunable to vary the direction of the sensing layer magnetization to be in-plane, canted, or out-of-plane.

Abstract: Some embodiments include a magnetic tunnel junction comprising magnetic reference material having an iridium-containing region between a multi-layer stack and a polarizer region. Some embodiments include a magnetic tunnel junction having a conductive first magnetic electrode which contains magnetic recording material, a conductive second magnetic electrode spaced from the first electrode and which contains magnetic reference material, and a non-magnetic insulator material between the first and second electrodes. The magnetic reference material of the second electrode includes a first region containing a stack of cobalt alternating with one or more of platinum, palladium and nickel; includes an iridium-containing second region over the first region; and includes a cobalt-containing third region over the second region. The third region is directly against the non-magnetic insulator material.

Abstract: A graphene-based magnetic tunnel junction is disclosed. The magnetic tunnel junction can enhance the tunnel magnetoresistance ratio and a device including the magnetic tunnel junction. The magnetic tunnel junction includes: a pinned layer; a free layer; and a graphene with segmented potentials configured between the pinned layer and the free layer. The magnetic tunnel junction may be a series or parallel connection of the above-mentioned basic form. The device including a magnetic tunnel junction may be a magnetic random access memory bit cell, a magnetic tunnel junction transistor device, a magnetic field sensor, etc.

Abstract: A method of making a spin-torque transfer magnetic random access memory device (STT MRAM) device includes forming a tunnel barrier layer on a reference layer; forming a free layer on the tunnel barrier layer, the free layer comprising a cobalt iron boron (CoFeB) alloy layer and an iron (Fe) layer; and performing a sputtering process to form a metal oxide layer on the Fe layer.

Abstract: Memory cells and methods of forming the same and devices including the same. The memory cells have first and second electrodes. An amorphous semiconductor material capable of electronic switching and having a first band gap is between the first and second electrodes. A material is in contact with the semiconductor material and having a second band gap, the second band gap greater than the first band gap.

Abstract: Integrated circuits and methods for manufacturing the same are provided. An integrated circuit includes a lower electrode overlying a substrate, an insulating layer overlying the lower electrode, and an upper electrode overlying the insulating layer. The lower electrode, the insulating layer, and the upper electrode form a stack having a side surface. A phase change spacer is adjacent to the side surface, where the phase change spacer is electrically connected to the lower electrode and the upper electrode.

Abstract: A memory structure is disclosed. The memory structure comprises a phase change material layer, a first electrode, a second electrode, and conductive spacers. The second electrode and the first electrode are electrically connected to an upper surface and a lower surface of the phase change material layer respectively. The conductive spacers are separated from each other and on side surfaces of the phase change material layer.

Abstract: A memory cell and method including a first electrode formed through a first opening in a first dielectric layer, a resistive layer formed on the first electrode, a spacing layer formed on the resistive layer, a second electrode formed on the resistive layer, and a second dielectric layer formed on the second electrode, the second dielectric layer including a second opening. The first dielectric layer formed on a substrate including a first metal layer. The first electrode and the resistive layer collectively include a first lip region that extends a first distance beyond the first opening. The second electrode and the second dielectric layer collectively include a second lip region that extends a second distance beyond the first opening. The spacing layer extends from the second distance to the first distance. The second electrode is coupled to a second metal layer using a via that extends through the second opening.

Abstract: Precursors for use in depositing tellurium-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for deposition of Ge2Sb2Te5 chalcogenide thin films in the manufacture of nonvolatile Phase Change Memory (PCM), by deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).

Abstract: The present invention provides a method for producing an organic EL element capable of shortening the film formation time while suppressing an increase in the blur width; and an organic EL display device. The method is for producing an organic EL element by scanning vapor deposition, in which one or more vapor deposition sources each are provided with ejection orifices that face the respective openings of a limiting plate, and the ejection orifices facing the same opening are spaced from each other to give a sum of distributions.

Abstract: The present invention relates to a substrate for an organic electrode device, a manufacturing method thereof, and an organic electronic device. An exemplary substrate of the invention, if an organic light emitting element is formed on an upper part of the substrate, can obtain luminance with high emission and uniformity by efficiently controlling the surface resistance of an electrode even when the device is configured into larger sizes.

Abstract: The present invention relates to a substrate for an organic electrode device, a manufacturing method thereof, and an organic electronic device. An exemplary substrate of the invention, if an organic light emitting element is formed on an upper part of the substrate, can obtain luminance with high emission and uniformity by efficiently controlling the surface resistance of an electrode even when the device is configured into larger sizes.

Abstract: A polymer having two different sets of repeat units consisting essentially of: Additionally, in the polymer R1 can be selected from the group consisting of alkyl group, alkoxy group, aryl groups and combinations thereof. In the polymer, n and m can be greater than 1. In the polymer, x and y can be different from each other and independently selected from the group consisting of: an alkoxy group, a substituted alkoxy group, an aryl group, an alkyl group, a substituted alkyl group, where y=1-3, where y=0-12, where R2 is selected from the group consisting of H, alkyl groups, and aryl groups, where R3 is selected from the group consisting of H, alkyl groups, and aryl groups, where R4 and R5 are independently selected from the group consisting of H, alkyl groups, and aryl groups, —NR6R7 where R6 and R7 are independently selected from the group consisting of H, alkyl groups, and aryl groups.

Abstract: A process of polymerizing f with wherein the stoichiometric ratio of f?(g+h) and f, g and h are not equal to 0. This process can also have R1 selected from the group consisting of alkyl group, alkoxy group, aryl groups and combinations thereof. Additionally, x and y can be different from each other and can be independently selected from the group consisting of: alkyl group, alkoxy group, aryl groups, where y=1-3, where y=0-12, where R2 is selected from the group consisting of H, alkyl group, alkoxy group, aryl groups, where R3 is selected from the group consisting of H, alkyl group, alkoxy group, aryl groups, where R4 and R5 are independently selected from the group consisting of H, alkyl group, alkoxy group, aryl groups, —NR6R7 where R6 and R7 are independently selected from the group consisting of H, alkyl group, alkoxy group, aryl groups.

Abstract: An embodiment of the present invention relates to a composition containing a polymer oroligomer (A) having a repeating unit with hole transport properties and also having a thienylgroup which may have a substituent, and an initiator (B), wherein the solubility of the composition is capable of being changed by applying heat, light, or both heat and light.

Abstract: A low-molecular-weight fused polycyclic heteroaromatic compound may have a compact planar structure in which seven or more rings are fused together, and thereby exhibits high charge mobility, and furthermore, enables the use of a deposition process or a room-temperature solution process when applied to devices, therefore realizing improved processibility. An organic thin film and electronic device may include the fused polycyclic heteroaromatic compound.

Abstract: The present invention discloses an organic material is represented by the following formula(A), the organic EL device employing the material as light emitting host or dopant of emitting layer, hole blocking layer(HBL), electron blocking layer(EBL), electron transport layer(ETL) and hole transport layer (HTL) can display good performance. wherein A represents a substituted or unsubstituted fused ring hydrocarbon units with two to three rings, m represents an integer of 0 to 10, G, Rs and R1 to R3 are the same definition as described in the present invention.

Abstract: A condensed-cyclic compound and an organic light-emitting diode including the condensed-cyclic compound.

Abstract: The present invention describes indenocarbazole derivatives having electron- and hole-transporting properties, in particular for use in the emission and/or charge-transport layer of electroluminescent devices or as matrix material. The invention furthermore relates to a process for the preparation of the compounds according to the invention and to electronic devices comprising same.

Abstract: Donor-acceptor compounds with nitrogen containing polyaromatics as the acceptor with emission originated from the charge transfer (CT) state is disclosed. The donor-acceptor compound is provided that has the structure of Formula 1 shown below: wherein X1 to X12 is independently selected from the group consisting of C—R and N, wherein at least one of X1 to X12 is N, wherein each R is independently selected from the group consisting of hydrogen, deuterium, halide, alkyl, cycloalkyl, heteroalkyl, arylalkyl, alkoxy, aryloxy, amino, silyl, alkenyl, cycloalkenyl, heteroalkenyl, alkynyl, aryl, heteroaryl, acyl, carbonyl, carboxylic acids, ester, nitrile, isonitrile, sulfanyl, sulfinyl, sulfonyl, phosphino, and combinations thereof; and at least one of the R comprises a donor group with at least two electron-donating nitrogens.

Abstract: Provided are a light emitting device material which contains a compound having a carbazole skeleton of a specific structure and which makes it possible to achieve a light emitting device having both high luminance efficiency and durability; and a light emitting device using the light emitting device material.

Abstract: Provided is a heterocyclic compound represented by Formula 1 below and an organic light-emitting device including the same. In Formula 1, R1 to R8 are each independently a hydrogen atom, a deuterium atom, a substituted or unsubstituted C1 to C60 alkyl group, a substituted or unsubstituted C3 to C60 cycloalkyl group, a substituted or unsubstituted C2 to C60 heteroaryl group, a substituted or unsubstituted C6 to C60 aryl group, or a substituted or unsubstituted C6 to C60 condensed polycyclic group, with the proviso that R2 is not wherein X is O, S, or Se.

Abstract: Provided is a light-emitting element which has high emission efficiency and a long lifetime and is driven at low voltage. The light-emitting element includes an EL layer between a pair of electrodes. The EL layer includes a compound which gives a first peak at a m/z of around 266.10 in a mass spectrum.

Abstract: An organic compound represented by formula (1) or formula (2) that is easy to synthesize, and has excellent chemical stability, semiconductor characteristics (high carrier mobility) and high solubility in a solvent. in formula (1), X is oxygen, sulfur or selenium; n is 0 or 1; R1 to R3 are hydrogen, fluorine, alkyl having 1 to 20 carbons, aryl, pyridyl, furyl, thienyl, thiazolyl or the like. However, except for a case where X is selenium, a case where all of R1 to R3 are simultaneously hydrogen is excluded, and a case where X is sulfur and all of R1 are simultaneously butyl is also excluded. In formula (2), X is oxygen, sulfur or selenium; n is 0 or 1; R1 to R2 are hydrogen, alkyl having 1 to 20 carbons, aryl, pyridyl, furyl, thienyl, thiazolyl or the like; however, a case where all of R1 to R2 are simultaneously hydrogen is excluded.

Abstract: A specific material for organic electroluminescence device having m-phenylene skeleton in its molecule realizes a highly heat-resistant and long lifetime organic electroluminescence device capable of driving at low voltage with high efficiency.

Abstract: This application discloses a new family of inorganic-organic hybrid semiconductor bulk materials built on periodic nanostructured 2D layers of ZnS that emit bright white light with high quantum efficiency. These ZnS-based crystalline inorganic-organic hybrid semiconductors have well defined and precisely controllable crystal structure and composition. Their optical emission properties, including intensity, quantum yield, and color quality, can be systematically tuned by varying the composition of both inorganic and organic components. Methods for preparing these materials, use of these materials as a new type of single-phased white light emitting phosphors, and their applications in making WLED devices are also disclosed.

Abstract: An organic light emitting display device with improved thermal reliability is disclosed. The organic light emitting display device includes a substrate, and an organic light emitting device that includes a first electrode, an organic light emitting layer including a first host, a second host, and a dopant, and a second electrode sequentially stacked on the substrate. The first host and the second host have different glass transition temperatures.

Abstract: An organic EL light emitting device includes a transparent substrate, a transparent electrode film formed on the substrate, a positive electrode contact portion in contact with a part of the transparent electrode film and electrically connected therewith, an insulating layer formed on the transparent electrode film such that the an insulating layer covers a portion excluding a light emitting part, an organic light emitting layer formed on the transparent electrode film and on the insulating layer, a negative electrode film formed on the organic light emitting layer, a negative electrode contact portion in contact with at least a part of the negative electrode film and electrically connected therewith, and a protective layer for separating and electrically insulating the positive electrode contact portion and the transparent electrode film from the negative electrode contact portion.

Abstract: An OLED package structure and a display device are provided. The OLED package structure has an OLED substrate including an OLED component; and a package substrate including an active metal film. A sealed chamber is formed by using a sealant to bond the OLED substrate and the package substrate, and the OLED component and the active metal film are positioned in the sealed chamber. The life time of the OLED component and the display device can be increased by absorbing residual oxygen in the package structure and external penetrating oxygen.

Abstract: The present disclosure provides novel light emitting devices including AMOLED displays, based on transparent OLED architecture, where a laminated nanostructured light extraction film can produce axial and integrated optical gains as well as improved angular luminance and color. Generally, the transparent AMOLED displays (100) with laminated sub-micron extractors (110a-c) include: (a) an extractor (110a) on a transparent substrate (112a) for light outcoupling on both sides of the transparent device (120); or (b) an extractor (110b) on a reflective film (112b) for providing light outcoupling off the bottom side of the bottom-emitting (BE) AMOLED (120); or (c) an extractor (110c) on a light absorbing film (112c) for providing outcoupling off the bottom side of the BE AMOLED (120) combined with improved ambient contrast.

Abstract: The invention relates to dimeric copper(I) complexes according to formula A, in particular as emitters in optoelectronic devices such as organic light emitting diodes (OLEDs) and other devices wherein: Cu: Cu(I), X: Cl, Br, I, SCN, CN, and/or alkynyl and P?N: a phosphine ligand substituted with a N-heterocycle.

Abstract: An organic light emitting diode display includes a substrate including a display region displaying an image and a peripheral region surrounding the display region, a plurality of pad wires formed in the peripheral region of the substrate, and a plurality of bumps formed between the plurality of pad wires. The organic light emitting diode display blocks or relieves impact which is generated when a temporary upper protective film is half-cut and applied to a plurality of pad wires or an insulating layer by forming a plurality of bumps between the plurality of pad wires, thus preventing a damage to the pad wires or the insulating layer.

Abstract: An ink printing process employs per-nozzle droplet volume measurement and processing software that plans droplet combinations to reach specific aggregate ink fills per target region, guaranteeing compliance with minimum and maximum ink fills set by specification. In various embodiments, different droplet combinations are produced through different print head/substrate scan offsets, offsets between print heads, the use of different nozzle drive waveforms, and/or other techniques. Optionally, patterns of fill variation can be introduced so as to mitigate observable line effects in a finished display device. The disclosed techniques have many other possible applications.

Abstract: A polymer battery module packaging sheet includes, as essential components, a base layer (61), an aluminum layer (62), chemical conversion coatings (64a, 64b) coating the opposite surfaces of the aluminum layer (62), and an innermost layer (63). The chemical conversion coatings (64a, 64b) are formed by processing the opposite surfaces of the aluminum layer (62) by a phosphate treatment method. The base layer (61) and the innermost layer (63) are bonded to the chemical conversion coatings (64a, 64b) of the aluminum layer (62) with adhesive layers (65a, 65b), respectively.

Abstract: A secondary battery and a secondary battery pack, the secondary battery including a case; an electrode assembly inside the case; a cap plate coupled with the case, the cap plate having an inner side facing an inside of the case and an outer side facing an outside of the case; a flexible collecting tab electrically connected with the electrode assembly and extending through the cap plate from the inner side to the outer side thereof; and, a terminal plate outside of the case and adjacent to the outer side of the cap plate, the flexible collecting tab being electrically connected with the terminal plate.

Abstract: A fixing sheet adapted for fixing a battery to a body of an electronic apparatus is provided. The fixing sheet includes a structure layer having a first portion, a second portion and a split line. The first portion is adapted to be adhered to the battery. The second portion is structurally connected to the first portion and adapted to be adhered to the body. The split line is located at a common border of the first portion and the second portion. The first portion is capable of being forced relative to the second portion once the battery is forced relative to the body, so as to separate the first portion and the second portion along the split line. An electronic apparatus having the fixing sheet is also provided.

Abstract: An electrical storage device includes a housing structure having battery unit housing portions each for housing a battery unit and an attaching object, a plurality of connectors attached to the attaching object, and conductive members connecting between the connectors. The connectors are attached to the attaching object on the battery unit housing portion side. The conductive members connect between the adjacent ones of the connectors on the battery unit housing portion side.