Abstract: A semiconductor structure comprising a buffer structure and a set of semiconductor layers formed adjacent to a first side of the buffer structure is provided. The buffer structure can have an effective lattice constant and a thickness such that an overall stress in the set of semiconductor layers at room temperature is compressive and is in a range between approximately 0.1 GPa and 2.0 GPa. The buffer structure can be grown using a set of growth parameters selected to achieve the target effective lattice constant a, control stresses present during growth of the buffer structure, and/or control stresses present after the semiconductor structure has cooled.

Abstract: The light emitting element is provided to comprise: a first conductive type semiconductor layer; a mesa; a current blocking layer; a transparent electrode; a first electrode pad and a first electrode extension; a second electrode pad and a second electrode extension; and an insulation layer partially located on the lower portion of the first electrode, wherein the mesa includes at least one groove formed on a side thereof, the first conductive type semiconductor layer is partially exposed through the groove, the insulation layer includes an opening through which the exposed first conductive type semiconductor layer is at least partially exposed, the first electrode extension includes extension contact portions in contact with the first conductive type semiconductor layer through an opening, and the second electrode extension includes an end with a width different from the average width of the second electrode extension.

Abstract: This method for producing a semiconductor light emitting element includes: a step (a) of preparing a growth substrate; a step (b) of growing a first layer made of Alx1Gay1In1-x1-y1N (0<x1?1, 0?y1?1) on an upper layer of the growth substrate in a <0001> direction; a step (c) of forming a groove portion extending along a <11-20> direction of the first layer with respect to the first layer with such a depth that a surface of the growth substrate is not exposed; a step (d) of growing a second layer made of Alx2Gay2In1-x2-y2N (0<x2?1, 0?y2?1) on an upper layer of the first layer with at least a {1-101} plane serving as a crystal growth plane; and a step (e) of growing an active layer on an upper layer of the second layer.

Abstract: A light-emitting-device package according to one aspect of the present invention includes: a metal substrate; a light emitting device disposed on a first surface of the metal substrate and configured to emit at least ultraviolet light; a pair of electrodes disposed to be spaced apart from each other on at least the first surface of the metal substrate, and electrically connected to the light emitting device; and an insulating layer provided between the metal substrate and the pair of electrodes. UV reflectance of the first surface of the metal body is higher than UV reflectance of the pair of electrodes.

Abstract: Disclosed are a phosphor composition and a light emitting apparatus including the same. The phosphor composition has a compositional formula of AzCxO12:RE, wherein the z is 0?z?3, the x is 0?x?5, the A includes at least one selected from the group consisting of Y, Sc, Gd and Lu, the C includes at least one selected from the group consisting of B, Al and Ga, and the RE includes at least one selected from the group consisting of Eu, Ce, Sm, Yb, Dy, Gd, Tm and Lu. The light emitting apparatus includes the phosphor composition.

Abstract: The invention provides a luminescent nano particles based luminescent material comprising a matrix of interconnected coated luminescent nano particles, wherein for instance wherein the luminescent nano particles comprise CdSe, wherein the luminescent nano particles comprise a coating of CdS and wherein the matrix comprises a coating comprising ZnS. The luminescent material according may have a quantum efficiency of at least 80% at 25° C., and having a quench of quantum efficiency of at maximum 20% at 100° C. compared to the quantum efficiency at 25° C.

Abstract: A lighting device includes a body section; a substrate provided in the body section; a wiring pattern provided on a surface of the substrate and including wiring pads; and light emitting elements provided on the wiring pattern and including electrodes in the vicinity of a circumferential edge of a surface opposite to a side on which the wiring pattern is provided. The lighting device also includes wirings that respectively connect the wiring pads and a plurality of electrodes; a surrounding wall member provided to surround the light emitting elements and having an annular shape; and a sealing section provided to cover the inside of the surrounding wall member. At least a part of the light emitting elements is connected in series. The electrodes are respectively positioned on or inside a circumference passing through centers of the light emitting elements which are connected in series.

Abstract: A method of manufacturing a light-emitting device includes providing a resin sheet that includes a lattice-patterned reflective material-containing portion and film-shaped phosphor-containing portions covering lattice openings of the reflective material-containing portion, placing the resin sheet on a substrate mounting a plurality of light-emitting elements such that each of the plurality of light-emitting elements is surrounded by the reflective material-containing portion and is covered on the top with the phosphor-containing portion, after placing the resin sheet on the substrate, softening the resin sheet by heating such that the phosphor-containing portions are adhered to the respective upper surfaces of the plurality of light-emitting elements and the reflective material-containing portion or the phosphor-containing portions is/are adhered to the side surfaces of the plurality of light-emitting elements, and curing the resin sheet and then cutting the substrate and the resin sheet to singulate individu

Abstract: There is provided a light emitting element package including: a light emitting laminate having a structure in which semiconductor layers are laminated and having a first main surface and a second main surface opposing the first main surface; a terminal unit disposed on an electrode disposed on the second main surface; a molded unit disposed on the second main surface of the light emitting laminate and allowing a portion of the terminal unit to be exposed; and a wavelength conversion unit disposed on the first main surface of the light emitting laminate.

Abstract: An embodiment relates to a light emitting device package and a lighting apparatus having the same. According to the embodiment, A light emitting device package includes a first lead frame; a second lead frame spaced apart from the first lead frame; a body coupled to the first lead frame and the second lead frame and includes a first cavity which exposes a portion of the upper surface of the first lead frame, a second cavity which exposes a portion of the upper surface of the second lead frame, and a spacer which is disposed between the first lead frame and the second frame; at least one light emitting device disposed in the first cavity; and a protection device disposed in the second cavity. The second cavity is disposed on a first inside surface of the first cavity and the first inside surface is connected to an upper surface of the spacer, and an area of a bottom surface of the first cavity is equal to or less than 40% of entire area of the body.

Abstract: A high-voltage light emitting diode and fabrication method thereof, in which, the liquid insulating material layer/the liquid conducting material layer, after curing, is used for insulating/connecting, making the isolated groove between the light emitting units extremely narrow (opening width?0.4 ?m, such as ?0.3 ?m), which improves single chip output, expands effective light emitting region area and improves light emitting efficiency; the serial/parallel connection yield is improved for this method avoids easy disconnection of wires across a groove with extremely large height difference in conventional high-voltage light emitting diodes; in addition, the manufacturing cost is reduced for the LED can be directly fabricated at the chip fabrication end.

Abstract: A semiconductor device includes a light emitting structure, and an interconnection bump including an under bump metallurgy (UBM) layer disposed on an electrode of at least one of the first and second conductivity-type semiconductor layers, and having a first surface disposed opposite to a surface of the electrode and a second surface extending from an edge of the first surface to be connected to the electrode, an intermetallic compound (IMC) disposed. on the first surface of the UBM layer, a solder bump bonded to the UBM layer with the IMC therebetween, and a barrier layer disposed on the second surface of the UBM layer and substantially preventing the solder bump from being diffused into the second surface of the UBM layer.

Abstract: Embodiments provide an illumination apparatus including a light emitting module including a board, at least one light emitting device disposed in a first region of the board and drive devices disposed in a second region of the board, a heat dissipation member, and dummy pads disposed around the at least one light emitting device, the heat dissipation member including a base, a core, and heat dissipation fins connected to the side surface of the core and the lower surface of the base. The first region is one region of the upper surface of the board, located within a designated range from the center of the board, and the second region is another region of the upper surface of the board, spaced apart from the first region by a first distance and spaced apart from the edge of the upper surface of the board by a second distance.

Abstract: A semiconductor package includes a substrate, at lest one support, a cover, and a plate. The substrate has at least one light sensor or thermal sensor, a first surface, and a second surface opposite to the first surface. The light sensor or the thermal sensor is disposed on the first surface. The second surface has an opening to expose the light sensor (or the thermal sensor). The support is disposed on the first surface. The cover is disposed on the support, such that the cover is above the light sensor (or the thermal sensor) to form a first space between the cover and the light sensor (or the thermal sensor). The plate is placed on the second surface to cover the opening, such that a second space is formed between the plate and the light sensor (or the thermal sensor).

Abstract: The invention provides thermoelectric devices based on folded, multi-layered nanomembranes prepared from 2-dimensional van der Waals materials, and compositions and methods of preparation and use thereof.

Abstract: The present invention relates to a thermoelectric composite in which a thermoplastic polymer constitutes a matrix, and one or more types of electroconductive materials selected from the group consisting of chalcogen materials and chalcogenides are dispersed at grain boundaries between the thermoplastic polymer particles to form a conductive pathway, wherein an average size of the electroconductive materials is smaller than an average size of the thermoplastic polymer particles, the chalcogen materials are one or more substances selected from the group consisting of sulfur (S), selenium (Se), tellurium (Te), and polonium (Po), the chalcogenides are compounds containing one or more chalcogens selected from the group consisting of S, Se, Te, and Po, and the thermoelectric composite has a thermal conductivity of 0.1 to 0.5 W/m·K. The present invention also relates to a method of preparing the thermoelectric composite.

Abstract: A thermoelectric nanocomposite is provided. The thermoelectric nanocomposite includes: a matrix having n-type semiconductor characteristics and comprising Mg, Si, Al, and Bi components, and a nanoinclusion comprising Bi and Mg components. The thermoelectric nanocomposite has significantly increased thermoelectric energy conversion efficiency by simultaneously having an increased Seebeck coefficient and a decreased thermal conductivity, such that the thermoelectric nanocomposite is usefully used to implement a thermoelectric device having high efficiency.

Abstract: A method of manufacturing a thermoelectric material including: providing a half-Heusler compound of MgCuSn nanoparticles, obtaining a powder by mechanical alloying by using Mg chips, Si fine powder, Sn fine powder and Sb powder, the half-Heusler compound of MgCuSn nanoparticles and cyclohexane solution,wherein the weight percent V, of the cyclohexane solution is comprised between 0.5 wt % and 4.0 wt % and wherein the volume percent VHH of the Half-Heusler compound of MgCuSn nanoparticles satisfies: 1.4 vol %<VHH<2.0 vol %.

Abstract: The present invention provides a method for manufacturing a dopant composition-nanomaterial composite, which method makes it possible to simply and efficiently change a Seebeck coefficient value of a nanomaterial. This manufacture method of the present invention includes the steps of: (a) putting a dopant composition in contact with a nanomaterial in a solvent; (b) drying a mixture obtained in the step (a) so as to remove the solvent, the dopant composition containing a given anion and an onium ion.

Abstract: The invention relates to a thermoelectric device (1) comprising at least two thermoelectric elements (3, 4), called first thermoelectric element and second thermoelectric element, able to generate an electric current owing to the action of a temperature gradient exerted between two of their faces, called first and second active faces (5, 6), the said device comprising a first electrical connection means (21) connecting electrically in series the two thermoelectric elements (3, 4) and a second electrical connection means (22) intended to connect electrically in series one of the two thermoelectric elements (3, 4) of the device with a third thermoelectric element (3, 4), joining of the first electrical connection means (21) and the second electrical connection means (22, 42) together with the first and the second thermoelectric elements (3) being obtained by means of sintering of the said first and second thermoelectric elements.

Abstract: A composition for forming a Ce-doped PZT-based piezoelectric film contains: PZT-based precursors containing metal atoms configuring the composite metal oxides; a diol; and polyvinylpyrrolidone. The PZT-based precursors are contained so that a metal atom ratio (Pb:Ce:Zr:Ti) in the composition satisfies (1.00 to 1.28):(0.005 to 0.05):(0.40 to 0.55):(0.60 to 0.45) and the total of Zr and Ti in a metal atom ratio is 1. A concentration of the PZT-based precursor in 100 mass % of the composition is from 17 mass % to 35 mass % in terms of an oxide concentration, a rate of diol in 100 mass % of the composition is from 16 mass % to 56 mass %, and a molar ratio of polyvinylpyrrolidone to 1 mole of the PZT-based precursor is 0.01 moles to 0.25 moles in terms of monomers.

Abstract: A method includes patterning a metal layer to form a plurality of bottom electrode features, forming a Magnetic Tunnel Junction (MTJ) stack by a line-of-sight deposition process such that a first portion of the MTJ stack is formed on the bottom electrode features, and a second portion of the MTJ stack is formed on a level that is different than a top surface of the bottom electrode features, and performing a removal process to remove the second portion of the MTJ stack while leaving the first portion of the MTJ stack substantially intact.

Abstract: A semiconductor memory device includes a selection transistor on a semiconductor substrate, a lower contact plug connected to a drain region of the selection transistor, and a magnetic tunnel junction pattern on the lower contact plug, the magnetic tunnel junction pattern including a bottom electrode in contact with the lower contact plug, the bottom electrode being an amorphous tantalum nitride layer, a top electrode on the bottom electrode, first and second magnetic layers between the top and bottom electrodes, and a tunnel barrier layer between the first and second magnetic layers.

Abstract: A semiconductor memory device includes free magnetic pattern on a substrate, a reference magnetic pattern on the free magnetic pattern, the reference magnetic pattern including a first pinned pattern, a second pinned pattern, and an exchange coupling pattern between the first and second pinned patterns, a tunnel barrier pattern between the reference magnetic pattern and the free magnetic pattern, a polarization enhancement magnetic pattern between the tunnel barrier pattern and the first pinned pattern, and an intervening pattern between the polarization enhancement magnetic pattern and the first pinned pattern, wherein the first pinned pattern includes first ferromagnetic patterns and anti-ferromagnetic exchange coupling patterns which are alternately stacked.

Abstract: An integrated circuit can have a first substrate supporting a magnetic field sensing element and a second substrate supporting another magnetic field sensing element. The first and second substrates can be arranged in a variety of configurations. Another integrated circuit can have a first magnetic field sensing element and second different magnetic field sensing element disposed on surfaces thereof.

Abstract: A magnetic memory device includes a substrate, a landing pad on the substrate, first and second magnetic tunnel junction patterns disposed on the interlayer insulating layer and spaced apart from the landing pad when viewed from a plan view, and an interconnection structure electrically connecting a top surface of the second magnetic tunnel junction pattern to the landing pad. A distance between the landing pad and the first magnetic tunnel junction pattern is greater than a distance between the first and second magnetic tunnel junction patterns, and a distance between the landing pad and the second magnetic tunnel junction pattern is greater than the distance between the first and second magnetic tunnel junction patterns, when viewed from a plan view.

Abstract: Provided are a magneto resistive effect element with a stable magnetization direction perpendicular to a film plane and with a controlled magnetoresistance ratio, and a magnetic memory using the magneto resistive effect element. Ferromagnetic layers of the magneto resistive effect element are formed from a ferromagnetic material containing at least one type of 3d transition metal such that the magnetoresistance ratio is controlled, and the film thickness of the ferromagnetic layers is controlled on an atomic layer level such that the magnetization direction is changed from a direction in the film plane to a direction perpendicular to the film plane.

Abstract: Magnetic memory devices having an antiferromagnetic reference layer based on Co and Ir are provided. In one aspect, a magnetic memory device includes a reference magnetic layer having multiple Co-containing layers oriented in a stack, wherein adjacent Co-containing layers in the stack are separated by an Ir-containing layer such that the adjacent Co-containing layers in the stack are anti-parallel coupled by the Ir-containing layer therebetween; and a free magnetic layer separated from the reference magnetic layer by a barrier layer. A method of writing data to a magnetic random access memory device having at least one of the present magnetic memory cells is also provided.

Abstract: Provided herein are methods of fabricating a magnetic memory device including forming magnetic tunnel junction patterns on a substrate, forming an interlayered insulating layer on the substrate to cover the magnetic tunnel junction patterns, forming a conductive layer on the interlayered insulating layer, patterning the conductive layer to form interconnection patterns electrically connected to the magnetic tunnel junction patterns, and performing a cleaning process on the interconnection patterns. The cleaning process is performed using a gas mixture of a first gas and a second gas. The first gas contains a hydrogen element (H), and the second gas contains a source gas different from that of the first gas.

Abstract: Methods of fabricating MRAM devices are provided along with a processing apparatus for fabricating the MRAM devices. The methods may include forming a ferromagnetic layer, cooling the ferromagnetic layer to a temperature within a range of between about 50° K to about 300° K, forming and oxidizing one or more Mg layers on the cooled ferromagnetic layer to form an MgO structure, forming a free layer on the MgO structure, and forming a capping layer on the free layer.

Abstract: A resistive random access memory includes a first electrode, a separating medium, a resistance changing layer and a second electrode. The first electrode has a mounting face. The separating medium has a first face in contact with the mounting face, a second face opposite to the first face, and an inner face extending between the first and second faces. The separating medium forms a through hole extending from the first to second face. A part of the mounting face is not covered by the separating medium. The separating medium has a first dielectric. The resistance changing layer extends along the part of the mounting face as well as the inner and second faces. The resistance changing layer has a second dielectric having a dielectric constant larger than a dielectric constant of the first dielectric by 2 or less. The second electrode is arranged on the resistance changing layer.

Abstract: According to one embodiment, a semiconductor memory device includes a plurality of first interconnects extending in a first direction, a plurality of second interconnects extending in a second direction, a plurality of stacked films respectively provided between the first interconnects and the second interconnects, each of the plurality of stacked films including a variable resistance film, a first inter-layer insulating film provided in a first region between the stacked films, and a second inter-layer insulating film provided in a second region having a wider width than the first region. The second inter-layer insulating film includes a plurality of protrusions configured to support one portion of the plurality of second interconnects on the second region. A protruding length of the protrusions is less than a stacking height of the stacked films.

Abstract: Borylated compounds are disclosed, as well as their methods of preparation and their applications. The disclosed borylated compounds are highly stable, and have reduced band gap properties, thereby making them attractive candidates for incorporation into semiconducting materials for use in a variety of electronic, optical or electro-optical devices or components.

Abstract: A mask frame assembly includes a frame, an open mask, and stick masks. The open mask is supported by the frame. The stick masks are disposed on the open mask and include ends coupled to the frame. The open mask includes: a first opening disposed in association with opposing ends of the open mask; and a second opening disposed between the first openings, the second opening being larger than the first opening. First deposition patterns of a first stick mask of the stick masks and second deposition patterns of a second stick mask of the stick masks overlap the second opening.

Abstract: A method for producing a multiple-surface imposition vapor deposition mask that enhances definition and reduces weight even when a size is increased. Each of multiple masks in an open space in a frame is configured by a metal mask having a slit, and a resin mask that is positioned on a front surface of the metal mask and has openings corresponding to a pattern to be produced by vapor deposition arranged by lengthwise and crosswise in a plurality of rows. In formation of the plurality of masks, after each of the metal masks and a resin film material for producing the resin mask are attached to the frame, the resin film material is processed, and the openings corresponding to the pattern to be produced by vapor deposition are formed in a plurality of rows lengthwise and crosswise, whereby the multiple-surface imposition vapor deposition mask of the above described configuration is produced.

Abstract: Embodiments of the present invention relate to the field of display technology and disclose a back plate clamping device, an alignment device and an evaporation equipment. In one embodiment, a back plate clamping device includes a framework, an upper clamping plate mounted to the framework, and a lower clamping plate assembly. The lower clamping plate assembly includes a stand, a plurality of support plates and a plurality of elastic support structures that are provided in an one-to-one correspondence with the support plates. A surface of each support plate facing away from the corresponding elastic support structure is formed with a supporting face, and, each support plate is mounted to the stand and is movable in a direction perpendicular to a plane where the supporting face is located. And, the stand is mounted to the framework and is movable in the direction perpendicular to the plane.

Abstract: There is provided a compound having Formula I In Formula I: BCz is a substituted or unsubstituted benzocarbazole unit; L1 and L2 are the same or different and are H, D, halogen, aryl, arylamino, crosslinkable groups, deuterated aryl, deuterated arylamino, or deuterated crosslinkable groups; Q1 and Q2 are the same or different and are a single bond, alkyl, aryl, heteroaryl, diarylamino, triarylamino, deuterated alkyl, deuterated aryl, deuterated heteroaryl, deuterated diarylamino, or deuterated triarylamino; and n is an integer greater than 0, with the proviso that when n=1, L1 and L2 are Cl, Br, crosslinkable groups or deuterated crosslinkable groups.

Abstract: A film comprising a polymer compound and a low molecular weight compound having carrier transportability, wherein the content of the low molecular weight compound is 5 to 40 parts by mass with respect to 100 parts by mass of the sum of the polymer compound and the low molecular weight compound, the diffraction intensity A specified by the following measuring method A is 3 to 50, and the intensity ratio (A/B) of the diffraction intensity A specified by the following measuring method A to the diffraction intensity B specified by the following measuring method B is 30 or less: (Measuring method A) the diffraction intensity A is the maximum diffraction intensity in a range of scattering vector of 1 nm?1 to 5 nm?1 in a profile obtained by an Out-of plane measuring method using a film X-ray diffraction method; (Measuring method B) the diffraction intensity B is the maximum diffraction intensity in a range of scattering vector of 10 nm?1 to 21 nm?1 in a profile obtained by an In-plane measuring method using a film X

Abstract: The present teachings relate to new semiconducting compounds including one or more moieties represented by formula (I): wherein X is a chalcogen; and one or more linear conjugated moieties and/or one or more cyclic conjugated moieties other than the moieties represented by formula (I). The present compounds can be used to prepare thin film semiconductor components which can be incorporated into various electronic, optical, and optoelectronic devices.

Abstract: An organic electroluminescence device includes an anode, a cathode, and an emitting layer, in which the emitting layer contains a first compound, a second compound, and a third compound, a singlet energy S(M1) of the first compound and a singlet energy S(M2) of the second compound satisfy a numerical formula (Numerical Formula 1) below, an electron affinity Af(M1) of the first compound and an electron affinity Af(M2) of the second compound satisfy a numerical formula (Numerical Formula 2) below, and a triplet energy T(M1) of the first compound satisfies a numerical formula (Numerical Formula 3) below, S(M2)?S(M1)×0.95??(Numerical Formula 1) Af(M2)?Af(M1)?0.2 eV??(Numerical Formula 2) T(M1)?2.0 eV??(Numerical Formula 3).

Abstract: The present invention relates to organic light-emitting diodes (OLEDs) comprising at least one substantially organic layer comprising 1,N,N,N?,N?-pentakis(1,1?-biphenyl-4-yl)-phenylene-3,5-diamine matrix compound and to new 1,N,N,N?,N?-pentakis(1,1?-bi-phenyl-4-yl)-phenylene-3,5-diamine compound useful especially as hole-transporting and/or electron-blocking layer matrix in OLEDs.

Abstract: An organic light emitting device and a display device, the organic light emitting device including an anode; a hole transport region on the anode; an emission layer provided on the hole transport region, the emission layer including a first host and a dopant; a first host layer on the emission layer, the first host layer including a second host; an electron transport region on the first host layer; and a cathode on the electron transport region, wherein the second host is represented by the following Formula 1:

Abstract: An organic light-emitting device having a compound represented by the following general formula in a light-emitting layer thereof has a high light emission efficiency. R1 to R5 each independently represent a hydrogen atom or a substituent having a Hammett ?p value of 0 or more. R6 to R20 each independently represent a hydrogen atom or a substituent, provided that at least one of R6 to R20 represents a substituted or unsubstituted N,N-diarylamino group. m represents 1 or 2.

Abstract: An organic light-emitting device includes: a first electrode; a second electrode facing the first electrode; and an organic layer between the first electrode and the second electrode, the organic layer including an emission layer, wherein the organic layer comprises a compound represented by Formula 1. An organic light-emitting device including the compound may have high efficiency, low voltage, high luminance, and a long lifespan.

Abstract: Provided are nitrogen-doped carbon quantum dots as pyrolysis product of fumaronitrile. The carbon quantum dots may be formed in such a manner that nitrogen may be doped in an amount of 3-10 wt % based on the total weight of the carbon quantum dots with no need for a separate doping process. As a result, the carbon quantum dots have excellent properties, such as optical property, electroconductivity and thermal safety, and thus may be useful for photocatalysts or organic solar cells, or the like.

Abstract: An organometallic compound represented by Formula 1: wherein, in Formula 1, L11, M, R11 to R17, m, and n are the same as described in the specification.

Abstract: As a novel substance having a novel skeleton, an organometallic complex with high emission efficiency which achieves improved color purity by a reduction of half width of an emission spectrum is provided. One embodiment of the present invention is an organometallic complex in which a ?-diketone and a six-membered heteroaromatic ring including two or more nitrogen atoms inclusive of a nitrogen atom that is a coordinating atom are ligands. In General Formula (G1), X represents a substituted or unsubstituted six-membered heteroaromatic ring including two or more nitrogen atoms inclusive of a nitrogen atom that is a coordinating atom. Further, R1 to R4 each represent a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms.

Abstract: A novel organometallic complex which can emit phosphorescence is provided. A light-emitting element, a light-emitting device, an electronic device, or a lighting device with high emission efficiency is provided. The organometallic complex having an aryl triazine derivative as a ligand is represented by General Formula (G1) below as a representative of the organometallic complex of the present invention.

Abstract: Iridium complexes with ligands containing twisted aryl groups having extended conjugation (i.e., the twisted aryl is substituted with an additional aryl group) and organic light emitting devices including the same are disclosed. The iridium complexes can be used in organic light emitting devices may provide improved stability color, lifetime and manufacturing.

Abstract: An organic electroluminescent element contains, on a base, at least a pair of electrodes that are arranged so as to face each other and a group of organic function layers including a light emitting layer, the group of organic function layers being held between the pair of electrodes. The base is a resin base having a thickness within the range of 3-50 ?m, and the resin base-side electrode is a transparent positive electrode that is mainly composed of silver and has a thickness within the range of 2-20 nm.