Abstract: An integrated circuit that includes: providing a substrate including a support structure, a dielectric layer, and a variable thickness film processed to include the dielectric layer within a recess of the variable thickness film; forming a gate over the variable thickness film; and forming a channel and a source/drain within the variable thickness film.

Abstract: Vertical field effect transistor (FET) device with tunable bandgap source/drain regions are provided, as well as methods for fabricating such vertical FET devices. For example, a vertical FET device includes a lower source/drain region formed on a substrate, a vertical semiconductor fin formed on the lower source/drain region, and an upper source/drain region formed on an upper region of the vertical semiconductor fin. The lower source/drain region and vertical semiconductor fin are formed of a first type of III-V semiconductor material. The upper source/drain region is formed of a second type of III-V semiconductor material which comprises the first type of III-V semiconductor material and at least one additional element that increases a bandgap of the second type of III-V semiconductor material of the upper source/drain region relative to a bandgap of the first type of III-V compound semiconductor material of the lower source/drain region and the vertical semiconductor fin.

Abstract: A film formation is performed using a target in which a material which is volatilized more easily than gallium when heated at 400° C. to 700° C., such as zinc, is added to gallium oxide by a sputtering method with high mass-productivity which can be applied to a large-area substrate, such as a DC sputtering method or a pulsed DC sputtering method. This film is heated at 400° C. to 700° C., whereby the added material is segregated in the vicinity of a surface of the film. Another portion of the film has a decreased concentration of the added material and a sufficiently high insulating property; therefore, it can be used for a gate insulator of a semiconductor device, or the like.

Abstract: In a semiconductor device including a transistor, the transistor is provided over a first insulating film, and the transistor includes an oxide semiconductor film over the first insulating film, a gate insulating film over the oxide semiconductor film, a gate electrode over the gate insulating film, a second insulating film over the oxide semiconductor film and the gate electrode, and a source and a drain electrodes electrically connected to the oxide semiconductor film. The first insulating film includes oxygen. The second insulating film includes hydrogen. The oxide semiconductor film includes a first region in contact with the gate insulating film and a second region in contact with the second insulating film. The first insulating film includes a third region overlapping with the first region and a fourth region overlapping with the second region. The impurity element concentration of the fourth region is higher than that of the third region.

Abstract: It is an object to manufacture a highly reliable display device using a thin film transistor having favorable electric characteristics and high reliability as a switching element. In a bottom gate thin film transistor including an amorphous oxide semiconductor, an oxide conductive layer having a crystal region is formed between an oxide semiconductor layer which has been dehydrated or dehydrogenated by heat treatment and each of a source electrode layer and a drain electrode layer which are formed using a metal material. Accordingly, contact resistance between the oxide semiconductor layer and each of the source electrode layer and the drain electrode layer can be reduced; thus, a thin film transistor having favorable electric characteristics and a highly reliable display device using the thin film transistor can be provided.

Abstract: Deep gate-all-around semiconductor devices having germanium or group III-V active layers are described. For example, a non-planar semiconductor device includes a hetero-structure disposed above a substrate. The hetero-structure includes a hetero-junction between an upper layer and a lower layer of differing composition. An active layer is disposed above the hetero-structure and has a composition different from the upper and lower layers of the hetero-structure. A gate electrode stack is disposed on and completely surrounds a channel region of the active layer, and is disposed in a trench in the upper layer and at least partially in the lower layer of the hetero-structure. Source and drain regions are disposed in the active layer and in the upper layer, but not in the lower layer, on either side of the gate electrode stack.

Abstract: A diode device including a III-N compound layer is provided. The III-N compound layer has a channel region therein. A cathode region is located on the III-N compound layer. A first anode region is located on the III-N compound layer and extends into the III-N compound layer. The bottom of the first anode region is under the channel region. A second anode region is located on the III-N compound layer between the cathode region and the first anode region, and extends into the III-N compound material layer. The second anode region includes a high-energy barrier region. The high-energy barrier region adjoins a sidewall of the first anode region. A method for manufacturing a diode device is also provided.

Abstract: The manufacturing method of a solar cell includes forming a photoelectric conversion unit and forming an electrode connected to the photoelectric conversion unit. The step of forming the electrode includes forming a seed formation layer connected to the photoelectric conversion unit, forming an anti-oxidation layer on the seed formation layer, performing a thermal process such that a material of the seed formation layer and a material of the photoelectric conversion unit react with each other to form a chemical bonding layer at a portion at which the seed formation layer and the photoelectric conversion unit are adjacent to each other, forming a conductive layer and a capping layer on the seed formation layer in a state in which a mask is used on the seed formation layer, and patterning the seed formation layer using either the conductive layer or the capping layer as a mask.

Abstract: Disclosed herein is a composition for solar cell electrodes. The composition includes a conductive powder, a glass frit, and an organic vehicle, wherein the glass frit is a bismuth oxide-tellurium oxide-zinc oxide-lithium oxide-based glass frit comprising: 5 wt % to 20 wt % of bismuth oxide; 55 wt % to 80 wt % of tellurium oxide; 0.1 wt % to 15 wt % of zinc oxide; and 0.1 wt % to 10 wt % of lithium oxide. Solar cell electrodes formed of the composition have low serial resistance (Rs) and high open voltage (Voc), thus providing high conversion efficiency and good adhesive strength with respect to a ribbon.

Abstract: A conductive paste composition contains a source of an electrically conductive metal, a lead-tellurium-based oxide, a discrete oxide of an adhesion promoting element, and an organic vehicle. An article such as a high-efficiency photovoltaic cell is formed by a process of deposition of the paste composition on a semiconductor substrate (e.g., by screen printing) and firing the paste to remove the organic vehicle and sinter the metal and lead-tellurium-based oxide.

Abstract: A method for manufacturing solar cells is disclosed. The method includes forming an insulating material in a printable suspension along the at least one side edge of a solar cell, the insulating material in a printable suspension further adapted to form a protective film which reduces cracking near at least one side edge of the solar cell and improve structural integrity against mechanical stress. The protective film has an elastic modulus of at least 3 GPa, an elongation break point of at least 13 percent and a glass transition temperature of at least 250 degrees Celsius which provides additional structural support along the side edges, increasing the overall structural integrity, providing electrical insulation along the edges and improve the flexure strength of the solar cell.

Abstract: Disclosed is a solar cell that comprises a photoelectric conversion body, a first electrode including a first finger portion that is placed on one main surface of the photoelectric conversion body and extends in first direction, a second electrode including a second finger portion which is placed on the one main surface of the photoelectric conversion body to be adjacent to the first finger portion in second direction intersecting the first direction and extends in the first direction, a first insulating layer covering at least part of a tip end portion of the first finger portion, which tip end portion is located on first side in the first direction, and a second insulating layer covering at least part of a tip end portion of the second finger portion, which tip end portion is located on a second side in the first direction.

Abstract: The present invention concerns a method for the manufacture of the first layer of a back contact layer for thin-layer solar cells in superstrate configuration. In the prior art, this layer is deposited as a compound, for example as a layer of Sb2Te3. In accordance with the invention, however, a tellurium-rich surface layer of the cadmium telluride layer is produced, on which a first material is deposited which is capable of forming an electrically conductive second material with tellurium and of producing the second material by reaction of the first material and tellurium in the surface layer. The second material forms the first layer of the back contact layer.

Abstract: A method of manufacturing a photovoltaic device may include concurrently transforming a transparent conductive oxide layer from a substantially amorphous state to a substantially crystalline state and forming one or more semiconductor layers.

Abstract: An optical device includes an optically transparent and electrically conducting conductor including graphene, a network of metal nanowires, or graphene integrated with a network of metal nanowires. The optical device includes a II VI compound semiconductor, a III V compound semiconductor, or InAsSb.

Abstract: A window structure includes a window, a design layer structure on the window, a light shield layer on the design layer structure, and a light absorption layer. The design layer structure includes a first hole exposing a portion of the window. The light shield layer includes a second hole in fluid communication with the first hole. The light absorption layer covers at least a portion of the design layer structure exposed by the first and second holes, and includes a third hole exposing a portion of the window. By including the light absorption layer of a gray or black color to cover exposed portions of the design layer structure, a vignette about an image caused by the design layer structure is prevented.

Abstract: A device for emitting electromagnetic radiation includes at least one optical semiconductor element configured to generate electromagnetic radiation, at least one photodiode, and at least one beam splitter. The beam splitter is arranged relative to the optical semiconductor element and the photodiode in such a way that one portion of the electromagnetic radiation generated by the optical semiconductor element passes through the beam splitter and a further portion of the electromagnetic radiation generated by the optical semiconductor element is reflected by the beam splitter and is directed onto the photodiode.

Abstract: A semiconductor structure includes a silicon substrate, a protection layer, an electrical pad, an isolation layer, a redistribution layer, a conductive layer, a passivation layer, and a conductive structure. The silicon substrate has a concave region, a step structure, a tooth structure, a first surface, and a second surface opposite to the first surface. The step structure and the tooth structure surround the concave region. The step structure has a first oblique surface, a third surface, and a second oblique surface facing the concave region and connected in sequence. The protection layer is located on the first surface of the silicon substrate. The electrical pad is located in the protection layer and exposed through the concave region. The isolation layer is located on the first and second oblique surfaces, the second and third surfaces of the step structure, and the tooth structure.

Abstract: An encapsulated integrated photodetector waveguide structures with alignment tolerance and methods of manufacture are disclosed. The method includes forming a waveguide structure bounded by one or more shallow trench isolation (STI) structure(s). The method further includes forming a photodetector fully landed on the waveguide structure.

Abstract: Disclosed are a solar cell and a method of fabricating the solar cell. The solar cell includes a back electrode layer; a light absorbing layer on the back electrode layer; and a buffer layer on the light absorbing layer, wherein the buffer layer includes a first buffer layer, a second buffer layer on the first buffer layer and a third buffer layer on the second buffer layer, and wherein the first buffer layer includes a group I-VI compound. A method of fabricating a solar cell includes the steps of: forming a back electrode layer on a substrate; forming a light absorbing layer on the back electrode layer; forming a second buffer layer on the light absorbing layer including selenium; and forming a third buffer layer including sulfide on the second buffer layer.

Abstract: An electro-optical device can include a plurality of nanocrystals positioned between a first electrode and a second electrode.

Abstract: A method for producing a P-N junction in a thin film photovoltaic cell comprising a deposition step in which are carried out successively: a layer of precursors of a photovoltaic material of type P or N, a barrier layer and a layer of precursors of a semiconducting material of type N or P, this deposition step being followed by an annealing step carried out with a supply of S and/or Se, this annealing step leading to the formation of an absorbing layer of the type P or N and of a buffer layer of type N or P and of a P-N junction at the interface between said layers.

Abstract: A light-absorbing or light-emitting solar cell assembly comprises an electrical insulator disposed on an electrically conductive substrate and that is provided with a metallized surface and at least one solar cell connected to the electrically conductive substrate, wherein the solar cell includes refractive secondary optics and is disposed in a recess in the insulator. The solar cell is connected to the substrate by the side orientated towards the substrate via an electrically conductive connection and the recess is dimensioned such that an interspace is produced laterally between the solar cell and the electrical insulator, the interspace being filled with a coupling medium and the solar cell being connected to the metallized surface by at least one electrical contact.

Abstract: The invention provides a polyester film for the protection of a back surface of a solar cell which, when applied to a silicon thin film solar cell, exhibits excellent durability even under high-temperature and high-humidity conditions and long term thermal stability. The polyester film (a) contains a polyester, as a main constituent, obtained by polymerization using a polycondensation catalyst containing aluminum and/or its compound as well as a phosphorus compound having an aromatic group in the molecule; (b) has a whiteness degree of 50 or higher; (c) contains 3 to 50% by mass of fine particles with a mean particle diameter of 0.1 to 3 ?m; and (d) has an acid value from not lower than 1 (eq/ton) and not higher than 30 (eq/ton).

Abstract: Provided are a multi-layered film, a backsheet for a photovoltaic cell, a method of forming the same and a photovoltaic module. The multi-layered film may include a primer layer and a fluoropolymer coating layer formed by coating, and thus the fluoropolymer coating layer, which is a surface layer, may have excellent durability and weather resistance due to an inter-diffusion effect between materials in the respective layers, and a high interface adhesive strength with a substrate and the primer layer. In addition, in the preparation of the multi-layered film, a production cost may be reduced, productivity may be increased, and degradation in quality of a product caused by thermal transformation or heat shock may be prevented. The multi-layered film may be effectively used as a backsheet for various photovoltaic modules.

Abstract: A solar module and manufacturing method for the solar module are provided which are able to reduce problems caused by thermal stress. The solar module (1) includes a solar cell (10), a wiring member (11), and an adhesive layer (12). The wiring member (11) is arranged on a surface of the solar cell (10). The adhesive layer (12) is made of resin. The adhesive layer (12) has wide portions (12a) and narrow portions (12b) along the longitudinal direction of the wiring member (11). The solar module (1) has a region at least to the outside of the narrow portions (12b) in which the wiring member (11) and the surface of the solar cell (10) face each other without an interposing adhesive layer (12).

Abstract: A flexible photovoltaic module for converting light into electricity includes a plurality of photovoltaic cells, a wiring harness, and a connection subsystem. The plurality of photovoltaic cells are electrically interconnected to form a positive node for supplying current to a load and a negative node for receiving current from the load. The wiring harness includes a plurality of flexible electrical conductors, each electrical conductor being electrically isolated within the wiring harness. The connection subsystem is operable to selectively connect the positive node to one of the electrical conductors of the wiring harness. A plurality of flexible photovoltaic modules may be connected to form a photovoltaic array.

Abstract: A flexible printed wiring board includes a first strip-shaped member and a second strip-shaped member each including a conductive part and an insulating part covering the conductive part; and a first connecting member including a conductive part and an insulating part covering the conductive part, the first connecting member connecting a first end of the first strip-shaped member and a first end of the second strip-shaped member to each other. The conductive parts of the first strip-shaped member, the second strip-shaped member, and the first connecting member are continuous with each other. The first strip-shaped member and the second strip-shaped member are capable of being linearly arranged when the first connecting member is bent and the first end of the first strip-shaped member and the first end of the second strip-shaped member face each other.

Abstract: The present invention relates to a device for the mounting and single-axis solar position tracking of a plurality of tracking units arranged successively in the north-south direction for solar panels having multiple drive units for this solar position tracking, wherein each tracking unit consists of a supporting framework for two adjacent solar panel assemblies each having multiple solar panels, which are installed on panel carriers, each have an associated main support shaft and a drive unit, wherein each main support shaft is connected at the ends to a main support receptacle in each case, the imaginary longitudinal axis through all main support receptacles forms the overall axis of rotation of the device, wherein the overall axis of rotation can have a bend, the drive unit is connected to two directly adjacent main support receptacles, so that a drive unit communicates in each case with two main support shafts, and causes the tracking of both solar panel assemblies from east to west and back by extending o

Abstract: Apparatus for the industrial wiring and final testing of photovoltaic concentrator modules, consisting of a module frame, a lens disc, a sensor carrier disc and an electrical line routing arrangement, comprising the following features: a) a laser contact-making device for the contactless connection of connecting lines between the individual sensors and of connecting elements and of collective contact plates, wherein the line routing arrangement on the sensor carrier disc as basic structure has, in each case, five CPV sensors connected in parallel, and these parallel circuits are connected in series, b) a device for testing electrical properties, wherein a specific voltage is applied to CPV sensors themselves, and the light emitted by them via the lenses is detected and assessed, c) a device for testing tightness of finished concentrator modules, wherein compressed air is applied to the modules in the interior and the emission of compressed air is checked.

Abstract: There is disclosed a system comprising a solar electricity system, comprising a solar collection surface adapted to convert light into DC electricity; a mounting bracket connected to a corner of the solar collection surface, the mounting bracket comprising a hole therethrough adapted to receive a fastener to mount the system to a building structure.

Abstract: An apparatus and method pertaining to a perpetual energy harvester. The harvester absorbs ambient infrared radiation and provides continual power regardless of the environment. The device seeks to harvest the largely overlooked blackbody radiation through use of a semiconductor thermal harvester.

Abstract: A photovoltaic device includes a crystalline substrate having a first dopant conductivity, an interdigitated back contact and a front surface field structure. The front surface field structure includes a crystalline layer formed on the substrate and a noncrystalline layer formed on the crystalline layer. The crystalline layer and the noncrystalline layer are doped with dopants having a same dopant conductivity as the substrate. Methods are also disclosed.

Abstract: A light receiving sensor (1) includes: a photodiode (PD) which generates a photocurrent (Ipd) upon receipt of light; a transistor (Tr11) through which the photocurrent (Ipd) flows; a transistor (Tr12) which forms, together with the transistor (Tr11), a first current mirror circuit (CM1); a transistor (Tr9) whose channel type is different from that of the transistor (Tr11), and a resistor (R10) which converts, to a voltage, a current flowing through the transistors (Tr11 and Tr12). The first current mirror circuit (CM1) amplifies the photocurrent (Ipd), the transistor (Tr11) has a source connected with a gate of a MOS transistor (Tr9), and the MOS transistor (Tr9) has a threshold voltage that is set to be equal to or above a threshold voltage of the transistor (Tr11). This decreases a capacity of the photodiode (PD) and therefore allows the light receiving sensor (1) to operate at a high speed while the photodiode (PD) is biased.

Abstract: A method of manufacturing a photodiode including a useful layer made of a semi-conductor alloy. The useful layer has a band gap value which decreases from its upper face to its lower face. A step of producing a first doped region forming a PN junction with a second doped region of the useful layer, said production of a first doped region including a first doping step, so as to produce a base portion; and a second doping step, so as to produce at least one protuberance protruding from the base portion and in the direction of the lower face.

Abstract: A diode is described which comprises a light-sensitive germanium region (5) located on a waveguide (2) made of silicon or silicon germanium and which has lateral dimensions in a direction transverse to a direction of light propagation in the waveguide that are identical or at most 20 nm per side shorter in comparison with the waveguide.

Abstract: In an avalanche photodiode provided with a substrate including a first electrode and a first semiconductor layer, formed of a first conductivity type, which is connected to the first electrode, the configuration is in such a way that, at least an avalanche multiplication layer, a light absorption layer, and a second semiconductor layer having a bandgap that is larger than that of the light absorption layer are layered on the substrate; a second conductivity type conductive region is formed in the second semiconductor layer; and the second conductivity type conductive region is arranged so as to be connected to a second electrode. With the foregoing configuration, an avalanche photodiode having a small dark current and a high long-term reliability can be provided with a simple process.

Abstract: A photodetector including a photoelectric conversion structure made of a semiconductor material and, on a light-receiving surface of the conversion structure, a stack of first and second diffractive elements, the second element being above the first element, wherein: the first element includes at least one pad made of a material having an optical index n1, laterally surrounded with a region made of a material having an optical index n2 different from n1; the second element includes at least one pad made of a material having an optical index n3, laterally surrounded with a region made of a material having an optical index n4 different from n3; the pads of the first and second elements are substantially vertically aligned; and optical index differences n1?n2 and n3?n4 have opposite signs.

Abstract: Improved methods and apparatus for forming thin film layers of chalcogenide on a substrate web. According to the present teachings, a feedback control system may be employed to measure one or more properties of the web and/or the chalcogenide layer, and to adjust one or more parameters of the system or buffer layer deposition method in response to the measurement.

Abstract: A multi-junction photovoltaic cell includes a substrate and a back contact layer formed on the substrate. A low bandgap Group IB-IIIB-VIB2 material solar absorber layer is formed on the back contact layer. A heterojunction partner layer is formed on the low bandgap solar absorber layer, to help form the bottom cell junction, and the heterojunction partner layer includes at least one layer of a high resistivity material having a resistivity of at least 100 ohms-centimeter. The high resistivity material has the formula (Zn and/or Mg)(S, Se, O, and/or OH). A conductive interconnect layer is formed above the heterojunction partner layer, and at least one additional single-junction photovoltaic cell is formed on the conductive interconnect layer, as a top cell. The top cell may have an amorphous Silicon or p-type Cadmium Selenide solar absorber layer. Cadmium Selenide may be converted from n-type to p-type with a chloride doping process.

Abstract: A method of manufacturing a solar cell is disclosed. The method includes forming a doping region including first and second portions having different doping concentrations by ion-implanting a dopant into a semiconductor substrate and forming an electrode connected to the doping region. In the forming of the doping region, the first and second portions are simultaneously formed by the same process using a mask that is disposed at a distance from the semiconductor substrate.

Abstract: Disclosed are a paste and a method for manufacturing a solar cell through screen printing said paste. The paste contains inorganic powder; an organic solvent; and a binder, and the inorganic powder has a tap density of 0.01 to 20 g/cm3. An etching mask pattern formed using said paste has good etch resistance in an etch-back process by which a selective emitter is formed, and thus, a stable emitter can be formed.

Abstract: A wafer-level method of fabricating optoelectronic modules performing a first vacuum injection technique, using a first vacuum injection tool, to surround optoelectronic devices laterally with a transparent overmold region, performing a replication technique to form a respective passive optical element on a top surface of each overmold region, and performing a second vacuum injected technique to form sidewalls laterally surrounding and in contact with sides of each overmold region. The replication technique and the second vacuum injection technique are performed using a combined replication and vacuum injection tool.

Abstract: An improved method for interconnecting thin film solar cells to form solar cell modules is provided, the method comprising using a flat metallic mesh formed from a thin metallic strip to provide a current collection grid over a thin film solar cell. The method is particularly useful for forming interconnections between thin film solar cells deposited on flexible substrates. The rectangular cross sectional shape of the mesh elements provides an increased area of electrical contact to the solar cell compared to the small tangential area provided by elements of circular cross section. Mesh elements can be made higher rather than wider to improve conductivity without proportionally increasing shading loss. Various coatings can be applied to the mesh to improve its performance, provide corrosion resistance, and improve its cosmetic appearance.

Abstract: A thickness of material may be detached from a substrate along a cleave plane, utilizing a cleaving process controlled by a releasable constraint plate. In some embodiments this constraint plate may comprise a plate that can couple side forces (the “P-plate”) and a thin, softer compliant layer (the “S-layer”) situated between the P-plate and the substrate. In certain embodiments a porous surface within the releasable constraint plate and in contact to the substrate, allows the constraint plate to be secured to the substrate via a first pressure differential. Application of a combination of a second pressure differential within a pre-existing cleaved portion, and a linear force to a side of the releasable constraint plate bound to the substrate, generates loading that results in controlled cleaving along the cleave plane.

Abstract: A nitride semiconductor structure and a semiconductor light emitting device including the same are revealed. The nitride semiconductor structure includes a multiple quantum well structure formed by a plurality of well layers and barrier layers stacked alternately. One well layer is disposed between every two barrier layers. The barrier layer is made of AlxInyGa1-x-yN (0<x<1, 0<y<1, 0<x+y<1) while the well layer is made of InzGa1-zN (0<z<1). Thereby quaternary composition is adjusted for lattice match between the barrier layers and the well layers. Thus crystal defect caused by lattice mismatch is improved.

Abstract: A light emitting diode includes a transparent substrate and a GaN buffer layer on the transparent substrate. An n-GaN layer is formed on the buffer layer. An active layer is formed on the n-GaN layer. A p-GaN layer is formed on the active layer. A p-electrode is formed on the p-GaN layer and an n-electrode is formed on the n-GaN layer. A reflective layer is formed on a second side of the transparent substrate. Also, a cladding layer of AlGaN is between the p-GaN layer and the active layer.

Abstract: A method for manufacturing a light emitting element that includes preparing a wafer having a substrate and a semiconductor structure, the substrate including a plurality of protrusions at positions corresponding to lattice points on a triangular lattice. The method includes forming a plurality of first modified parts in the substrate by irradiating the substrate with a laser beam along first dividing lines, forming a plurality of second modified parts in the substrate by irradiating the substrate with a laser beam along second dividing lines, and dividing the wafer along the first modified parts and the second modified parts to obtain a plurality of light emitting elements.

Abstract: The present invention provides structures and methods that enable the construction of micro-LED chiplets formed on a sapphire substrate that can be micro-transfer printed. Such printed structures enable low-cost, high-performance arrays of electrically connected micro-LEDs useful, for example, in display systems. Furthermore, in an embodiment, the electrical contacts for printed LEDs are electrically interconnected in a single set of process steps. In certain embodiments, formation of the printable micro devices begins while the semiconductor structure remains on a substrate. After partially forming the printable micro devices, a handle substrate is attached to the system opposite the substrate such that the system is secured to the handle substrate. The substrate may then be removed and formation of the semiconductor structures is completed. Upon completion, the printable micro devices may be micro transfer printed to a destination substrate.

Abstract: A multiple quantum well structure includes a plurality of well-barrier sets arranged along a direction. Each of the well-barrier sets includes a barrier layer, at least one intermediate level layer, and a well layer. A bandgap of the barrier layer is greater than an average bandgap of the intermediate level layer, and the average bandgap of the intermediate level layer is greater than a bandgap of the well layer. The barrier layers, the intermediate level layers, and the well layers of the well-barrier sets are stacked by turns. Thicknesses of at least parts of the well layers in the direction gradually decrease along the direction, and thicknesses of at least parts of the intermediate level layers in the direction gradually increase along the direction. A method for manufacturing a multiple quantum well structure is also provided.